JP2016035103A - 蒸気供給のためのシステムおよび方法 - Google Patents
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- 239000002243 precursor Substances 0.000 claims abstract description 77
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- 239000000758 substrate Substances 0.000 claims abstract description 30
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- 238000010438 heat treatment Methods 0.000 claims abstract description 7
- 238000010926 purge Methods 0.000 claims description 125
- 239000003708 ampul Substances 0.000 claims description 67
- 238000002347 injection Methods 0.000 claims description 45
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- 238000000231 atomic layer deposition Methods 0.000 claims description 5
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- 238000010586 diagram Methods 0.000 description 12
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
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- 229910052786 argon Inorganic materials 0.000 description 4
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 4
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Abstract
【解決手段】蒸気供給システム100は、不活性搬送ガスと共に加熱ベーパードローアプローチを用いてガス前駆体を供給する。液体前駆体120を収容するアンプル118が、所定の蒸気圧を維持するために加熱され、搬送ガスが、安定した前駆体流を維持するためにアンプルを通して流れる。供給ラインに沿った十分な勾配加熱および正確な温度制御が、凝結および分解を防ぐ。
【選択図】図2
Description
本願は、2014年8月1日出願の米国仮特許出願第62/032,234号の利益を主張する。上記出願の開示全体が、参照により本明細書に組み込まれる。
Claims (19)
- 基板処理システムのための蒸気供給システムであって、
液体前駆体を収容するためのアンプルと、
前記アンプルを所定の温度まで選択的に加熱して、前記液体前駆体を少なくとも部分的に気化させるためのヒータと、
流入口および流出口を備えた加熱注入マニホルドと、
プッシュガス源と流体連通する流入口および前記アンプルと流体連通する流出口を有する第1のバルブと、
前記アンプルから気化前駆体を受け入れるための流入口および前記加熱注入マニホルドの前記流入口と流体連通する流出口を有する第2のバルブと、
バルブマニホルドであって、
前記加熱注入マニホルドの流出口と流体連通する第1のノードと、
前記第1のノードと流体連通する流入口およびバキュームと流体連通する流出口を有する第3のバルブと、
前記第1のノードと流体連通する流入口および第2のノードと流体連通する流出口を有する第4のバルブと、
前記第2のノードと流体連通する流出口を有する第5のバルブと、
前記第2のノードと流体連通する流出口を有する第6のバルブと、を備えた、バルブマニホルドと、
前記第2のノードと流体連通するガス分配装置と、
を備える、蒸気供給システム。 - 請求項1に記載の蒸気供給システムであって、前記ガス分配装置は、シャワーヘッドを含む、蒸気供給システム。
- 請求項1に記載の蒸気供給システムであって、さらに、
前記第2のバルブの前記流出口と流体連通する流入口を有する第7のバルブと、
前記第2のバルブの前記流出口と流体連通する制限オリフィスと、
前記制限オリフィスと流体連通する流入口および前記加熱注入マニホルドと流体連通する流出口を有する第8のバルブと、
を備える、蒸気供給システム。 - 請求項3に記載の蒸気供給システムであって、さらに、
第1のガスマニホルドと流体連通する流入口および前記第5のバルブの流入口と流体連通する流出口を有する第9のバルブを備える、蒸気供給システム。 - 請求項4に記載の蒸気供給システムであって、さらに、前記第1のガスマニホルドと流体連通する流入口および前記第1のガスマニホルドから前記ガス分配装置の背面にガスを供給する流出口を有する第10のバルブを備える、蒸気供給システム。
- 請求項4に記載の蒸気供給システムであって、さらに、第2のガスマニホルドおよび前記第6のバルブの流入口と流体連通する流入口ならびにバキューム源と流体連通する流出口を有する第10のバルブを備える、蒸気供給システム。
- 請求項6に記載の蒸気供給システムであって、さらに、
ドーズ段階中に、
前記第1のバルブを用いて、前記アンプルにプッシュガスを供給し、
前記第2のバルブ、前記第7のバルブ、前記制限オリフィス、および、前記第8のバルブを用いて、前記アンプルから前記加熱注入マニホルドに前記気化前駆体を供給し、
前記第4のバルブを用いて、前記加熱注入マニホルドから前記ガス分配装置に前記気化前駆体を供給し、
前記第10のバルブを用いて、前記第2のガスマニホルドを迂回させるよう構成されたコントローラを備える、蒸気供給システム。 - 請求項7に記載の蒸気供給システムであって、前記コントローラは、さらに、
前記ドーズ段階後に、順次、ドーズパージ段階、ドーズパージ後段階、高周波(RF)段階、および、RF後段階で動作し、
前記ドーズパージ段階、前記ドーズパージ後段階、前記RF段階、および、前記RF後段階中に、
前記第1のバルブを用いて、前記アンプルにプッシュガスを供給し、
前記第2のバルブ、前記第7のバルブ、前記制限オリフィス、および、前記第8のバルブを用いて、前記アンプルから前記加熱注入マニホルドに前記気化前駆体を供給し、
前記前記第3のバルブおよび前記第4のバルブを用いて、前記加熱注入マニホルドからバキュームに前記気化前駆体を迂回させ、
前記ドーズパージ段階中に、前記第6のバルブおよび前記第10のバルブを用いて、前記第2のガスマニホルドからガスを迂回させ、前記第9のバルブおよび前記第5のバルブを用いて、前記第1のガスマニホルドから前記ガス分配装置にガスを供給し、
前記ドーズパージ後段階中に、前記第9のバルブおよび前記第5のバルブを用いて、前記第1のガスマニホルドから前記ガス分配装置にガスを供給し、前記第6のバルブを用いて、前記第2のガスマニホルドから前記ガス分配装置にガスを供給し、
前記RF段階中に、前記第6のバルブを用いて、前記第2のガスマニホルドから前記ガス分配装置にガスを供給し、前記第9のバルブを用いて、前記第1のガスマニホルドから前記ガス分配装置にガスを供給せず、
前記RF後段階中に、前記第9のバルブおよび前記第5のバルブを用いて、前記第1のガスマニホルドから前記ガス分配装置にガスを供給し、前記第6のバルブおよび前記第10のバルブを用いて、前記第2のガスマニホルドからガスを迂回させるよう構成されている、蒸気供給システム。 - 請求項7に記載の蒸気供給システムであって、前記コントローラは、さらに、
前記ドーズ段階後に、順次、ドーズパージ段階、ドーズパージ後段階、高周波(RF)段階、および、RF後段階で動作し、
前記ドーズパージ段階、前記ドーズパージ後段階、前記RF段階、および、前記RF後段階中に、前記第2のバルブ、前記第7のバルブ、前記制限オリフィス、および、前記第8のバルブを用いて、前記加熱注入マニホルドに、そして、前記第4のバルブを用いて、前記ガス分配装置に、前記気化前駆体を含まない前記プッシュガスを供給し、
前記ドーズパージ段階中に、前記第6のバルブおよび前記第10のバルブを用いて、前記第2のガスマニホルドからガスを迂回させ、前記第9のバルブおよび前記第5のバルブを用いて、前記第1のガスマニホルドから前記ガス分配装置にガスを供給し、
前記ドーズパージ後段階中に、前記第9のバルブおよび前記第5のバルブを用いて、前記第1のガスマニホルドから前記ガス分配装置にガスを供給し、前記第6のバルブを用いて、前記第2のガスマニホルドから前記ガス分配装置にガスを供給し、
前記RF段階中に、前記第6のバルブを用いて、前記第2のガスマニホルドから前記ガス分配装置にガスを供給し、前記第9のバルブを用いて、前記第1のガスマニホルドから前記ガス分配装置にガスを供給せず、
前記RF後段階中に、前記第9のバルブおよび前記第5のバルブを用いて、前記第1のガスマニホルドから前記ガス分配装置にガスを供給し、前記第6のバルブおよび前記第10のバルブを用いて、前記第2のガスマニホルドからガスを迂回させるよう構成されている、蒸気供給システム。 - 請求項7に記載の蒸気供給システムであって、前記コントローラは、さらに、
前記ドーズ段階後に、順次、ドーズパージ段階、ドーズパージ後段階、高周波(RF)段階、および、RF後段階で動作し、
前記ドーズパージ段階、前記ドーズパージ後段階、前記RF段階、および、前記RF後段階中に、前記第2のバルブ、前記第7のバルブ、前記制限オリフィス、および、前記第8のバルブを用いて、前記加熱注入マニホルドに前記気化前駆体を含まない前記プッシュガスを供給し、前記第3のバルブおよび前記第4のバルブを用いて、前記加熱注入マニホルドからバキュームに前記プッシュガスを迂回させ、
前記ドーズパージ段階中に、前記第6のバルブおよび前記第10のバルブを用いて、前記第2のガスマニホルドからガスを迂回させ、前記第9のバルブおよび前記第5のバルブを用いて、前記第1のガスマニホルドから前記ガス分配装置にガスを供給し、
前記ドーズパージ後段階中に、前記第9のバルブおよび前記第5のバルブを用いて、前記第1のガスマニホルドから前記ガス分配装置にガスを供給し、前記第6のバルブを用いて、前記第2のガスマニホルドから前記ガス分配装置にガスを供給し、
前記RF段階中に、前記第6のバルブを用いて、前記第2のガスマニホルドから前記ガス分配装置にガスを供給し、前記第9のバルブを用いて、前記第1のガスマニホルドから前記ガス分配装置にガスを供給せず、
前記RF後段階中に、前記第9のバルブおよび前記第5のバルブを用いて、前記第1のガスマニホルドから前記ガス分配装置にガスを供給し、前記第6のバルブおよび前記第10のバルブを用いて、前記第2のガスマニホルドからガスを迂回させるよう構成されている、蒸気供給システム。 - 請求項7に記載の蒸気供給システムであって、前記コントローラは、さらに、
前記ドーズ段階後に、順次、ドーズパージ段階、ドーズパージ後段階、高周波(RF)段階、および、RF後段階で動作し、
前記ドーズパージ段階、前記ドーズパージ後段階、前記RF段階、および、前記RF後段階中に、前記プッシュガスをバキュームに迂回させ、
前記ドーズパージ段階中に、前記第6のバルブおよび前記第10のバルブを用いて、前記第2のガスマニホルドからガスを迂回させ、前記第9のバルブおよび前記第5のバルブを用いて、前記第1のガスマニホルドから前記ガス分配装置にガスを供給し、
前記ドーズパージ後段階中に、前記第9のバルブおよび前記第5のバルブを用いて、前記第1のガスマニホルドから前記ガス分配装置にガスを供給し、前記第6のバルブを用いて、前記第2のガスマニホルドから前記ガス分配装置にガスを供給し、
前記RF段階中に、前記第6のバルブを用いて、前記第2のガスマニホルドから前記ガス分配装置にガスを供給し、前記第9のバルブを用いて、前記第1のガスマニホルドから前記ガス分配装置にガスを供給せず、
前記RF後段階中に、前記第9のバルブおよび前記第5のバルブを用いて、前記第1のガスマニホルドから前記ガス分配装置にガスを供給し、前記第6のバルブおよび前記第10のバルブを用いて、前記第2のガスマニホルドからガスを迂回させるよう構成されている、蒸気供給システム。 - 請求項7に記載の蒸気供給システムであって、前記コントローラは、さらに、
前記ドーズ段階後に、順次、ドーズパージ段階、ドーズパージ後段階、高周波(RF)段階、および、RF後段階で動作し、
前記ドーズパージ段階、前記ドーズパージ後段階、前記RF段階、および、前記RF後段階中に、前記プッシュガスをバキュームに迂回させ、第3のガスマニホルドから前記加熱注入マニホルドにガスを供給し、前記第3のバルブを用いて、前記加熱注入マニホルドの前記流出口を迂回させ、
前記ドーズパージ段階中に、前記第6のバルブおよび前記第10のバルブを用いて、前記第2のガスマニホルドからガスを迂回させ、前記第9のバルブおよび前記第5のバルブを用いて、前記第1のガスマニホルドから前記ガス分配装置にガスを供給し、
前記ドーズパージ後段階中に、前記第9のバルブおよび前記第5のバルブを用いて、前記第1のガスマニホルドから前記ガス分配装置にガスを供給し、前記第6のバルブを用いて、前記第2のガスマニホルドから前記ガス分配装置にガスを供給し、
前記RF段階中に、前記第6のバルブを用いて、前記第2のガスマニホルドから前記ガス分配装置にガスを供給し、前記第9のバルブを用いて、前記第1のガスマニホルドから前記ガス分配装置にガスを供給せず、
前記RF後段階中に、前記第9のバルブおよび前記第5のバルブを用いて、前記第1のガスマニホルドから前記ガス分配装置にガスを供給し、前記第6のバルブおよび前記第10のバルブを用いて、前記第2のガスマニホルドからガスを迂回させるよう構成されている、蒸気供給システム。 - 請求項7に記載の蒸気供給システムであって、前記コントローラは、さらに、
前記ドーズ段階後に、順次、ドーズパージ段階、ドーズパージ後段階、高周波(RF)段階、および、RF後段階で動作し、
前記ドーズパージ段階中に、前記第7のバルブ、前記制限オリフィス、前記第8のバルブ、および、前記第4のバルブを用いて、前記加熱注入マニホルドおよび前記ガス分配装置に前記気化前駆体を含まない前記プッシュガスを供給し、前記第10のバルブを用いて、前記第2のガスマニホルドからガスを迂回させ、前記第9のバルブおよび前記第5のバルブを用いて、前記第1のガスマニホルドから前記ガス分配装置にガスを供給し、
前記ドーズパージ後段階および前記RF段階中に、前記第7のバルブ、前記制限オリフィス、および、前記第8のバルブを用いて、前記加熱注入マニホルドに前記気化前駆体を含まない前記プッシュガスを供給し、前記第3のバルブを用いて、前記加熱注入マニホルドの出力を迂回させ、
前記RF後段階中に、前記第7のバルブ、前記制限オリフィス、および、前記第8のバルブを用いて、前記加熱注入マニホルドに気化前駆体を供給し、前記第3のバルブを用いて、前記加熱注入マニホルドの出力を迂回させ、
前記ドーズパージ後段階中に、前記第9のバルブおよび前記第5のバルブを用いて、前記第1のガスマニホルドから前記ガス分配装置にガスを供給し、前記第6のバルブを用いて、前記第2のガスマニホルドから前記ガス分配装置にガスを供給し、
前記RF段階中に、前記第6のバルブを用いて、前記第2のガスマニホルドから前記ガス分配装置にガスを供給し、前記第9のバルブを用いて、前記第1のガスマニホルドから前記ガス分配装置にガスを供給せず、
前記RF後段階中に、前記第9のバルブおよび前記第5のバルブを用いて、前記第1のガスマニホルドから前記ガス分配装置にガスを供給し、前記第10のバルブを用いて、前記第2のガスマニホルドからガスを迂回させるよう構成されている、蒸気供給システム。 - 請求項7に記載の蒸気供給システムであって、前記コントローラは、さらに、
前記ドーズ段階後に、順次、ドーズパージ段階、ドーズパージ後段階、高周波(RF)段階、および、RF後段階で動作し、
前記ドーズパージ段階中に、前記第7のバルブ、前記制限オリフィス、前記第8のバルブ、および、前記第4のバルブを用いて、前記加熱注入マニホルドおよび前記ガス分配装置に前記気化前駆体を含まない前記プッシュガスを供給し、前記第6のバルブを用いて、前記第2のガスマニホルドから前記ガス分配装置にガスを供給し、前記第9のバルブを用いて、前記第1のガスマニホルドから前記ガス分配装置にガスを供給せず、
前記ドーズパージ後段階および前記RF段階中に、前記第7のバルブ、前記制限オリフィス、および、前記第8のバルブを用いて、前記加熱注入マニホルドに前記気化前駆体を含まない前記プッシュガスを供給し、前記第3のバルブを用いて、前記加熱注入マニホルドの出力を迂回させ、
前記ドーズパージ後段階、前記RF段階、および、前記RF後段階中に、前記第6のバルブを用いて、前記第2のガスマニホルドから前記ガス分配装置にガスを供給し、前記第9のバルブを用いて、前記第1のガスマニホルドから前記ガス分配装置にガスを供給せず、
前記RF後段階中に、前記第1のバルブ、前記第2のバルブ、前記第7のバルブ、および、前記第8のバルブを用いて、前記加熱注入マニホルドに気化前駆体を供給し、前記第3のバルブを用いて、前記加熱注入マニホルドの出力を迂回させるよう構成されている、蒸気供給システム。 - 請求項7に記載の蒸気供給システムであって、前記コントローラは、さらに、
前記ドーズ段階後に、順次、ドーズパージ段階、ドーズパージ後段階、高周波(RF)段階、および、RF後段階で動作し、
前記ドーズ段階中に、前記第9のバルブが閉じられた状態で、第3のマニホルドから第11のバルブおよび前記第5のバルブを通して前記ガス分配装置にガスを供給し、
前記ドーズパージ段階中に、前記加熱注入マニホルドにパージガスも気化前駆体も供給せず、前記第10のバルブを用いて、前記第2のガスマニホルドからガスを迂回させ、前記第9のバルブおよび前記第5のバルブを用いて、前記第1のガスマニホルドから前記ガス分配装置にガスを供給し、
前記ドーズパージ後段階中に、前記加熱注入マニホルドにパージガスも気化前駆体も供給せず、前記第6のバルブを用いて、前記第2のガスマニホルドから前記ガス分配装置にガスを供給し、前記第9のバルブおよび前記第5のバルブを用いて、前記第1のガスマニホルドから前記ガス分配装置にガスを供給し、
前記RF段階中に、前記加熱注入マニホルドにパージガスも気化前駆体も供給せず、前記第6のバルブを用いて、前記第2のガスマニホルドから前記ガス分配装置にガスを供給し、
前記RF後段階中に、前記加熱注入マニホルドにパージガスも気化前駆体も供給せず、前記第10のバルブを用いて、前記第2のガスマニホルドからガスを迂回させ、前記第9のバルブおよび前記第5のバルブを用いて、前記第1のガスマニホルドから前記ガス分配装置にガスを供給するよう構成されている、蒸気供給システム。 - 請求項1に記載の蒸気供給システムであって、さらに、
前記アンプル内の前記液体前駆体のレベルを検知するためのレベルセンサと、
前記レベルに基づいて、前記アンプル内の前記液体前駆体のレベルを自動的に維持するための前駆体供給源と、を備える、蒸気供給システム。 - 請求項16に記載の蒸気供給システムであって、さらに、
前記アンプル内の第1の位置で前記液体前駆体の温度を検知するための第1の温度センサと、
前記アンプル内の第2の位置で前記液体前駆体の温度を検知するための第2の温度センサと、
を備え、
前記第1の位置は、目標充填レベルに配置され、前記第2の位置は、前記目標充填レベルと補充位置との間に配置される、蒸気供給システム。 - 請求項1に記載の蒸気供給システムであって、前記ガス分配装置は、基板処理チャンバ内に配置され、原子層蒸着および化学蒸着の少なくとも一方が、前記基板処理チャンバ内で実行される、蒸気供給システム。
- 請求項18に記載の蒸気供給システムであって、さらに、前記基板処理チャンバ内でプラズマを発生させるためのプラズマ発生器を備える、蒸気供給システム。
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TWI671425B (zh) | 2019-09-11 |
JP6868951B2 (ja) | 2021-05-12 |
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KR102435685B1 (ko) | 2022-08-23 |
KR102569479B1 (ko) | 2023-08-21 |
US9970108B2 (en) | 2018-05-15 |
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CN105316657A (zh) | 2016-02-10 |
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