CN107675144A - 等离子体增强化学气相沉积装置 - Google Patents
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Abstract
本发明公布了一种等离子体增强化学气相沉积装置，包括反应腔室及位于所述反应腔室内的第一电极与第二电极，所述第一电极与所述第二电极相对设置，所述第二电极面对所述第一电极一侧用于放置玻璃基板，所述第二电极包括面对所述第一电极的第一表面，所述第一表面设有凹槽，所述玻璃基板与所述凹槽之间形成间隙用于流动受热气体。凹槽形成玻璃基板与第二电极之间的间隙，受热的气体均匀分布在玻璃基板表面，使玻璃基板均匀受热，由于凹槽凹陷于第一表面，即使多次使用后第二电极也不会被磨损导致玻璃基板受热不均匀，提高了产品良率，降低了生产成本。
Description
技术领域
本发明涉及半导体设备制造技术领域，尤其是涉及一种等离子体增强化学气相沉积装置。
背景技术
等离子体增强化学气相沉积(Plasma Enhanced Chemical Vapor Deposition，PECVD)在半导体和平板显示行业有大量的应用，尤其是在低温多晶硅(Low TemperaturePoly-silicon，LTPS)和有机发光二极管(Organic Light-Emitting Diode，OLED)平板显示行业，等离子体增强化学气相沉积装置是不可或缺的关键设备，用于制备各种薄膜。玻璃基板加热是否均匀，使等离子体感生的电荷是否均匀是影响等离子体增强化学气相沉积效果的重要因素。
现有技术中，等离子体增强化学气相沉积装置的下电极表面一般涂覆一层粗糙的氧化铝层，粗糙的氧化铝与玻璃基板表面之间存在间隙，受热的气体在间隙内均匀流动，使玻璃基板受热均匀，从而使等离子体感生的电荷均匀。但是在实际的使用过程中，玻璃基板和下电极氧化铝突出点摩擦后会造成突出点断裂，随着氧化铝突出被磨损，对玻璃基板加热的均匀性会降低，导致玻璃基板成膜后出现斑点或显示亮度不均匀的现象，影响产品良率，在实际的生产中需要定期的重新制备氧化铝膜，造成生产不连续和生产成本增加。
发明内容
本发明要解决的技术问题是提供一种等离子体增强化学气相沉积装置，用以解决现有技术中下电极的氧化铝层易磨损，导致玻璃基板加热的均匀性会降低，玻璃基板成膜后出现斑点或显示亮度不均匀的现象，产品良率低，生产成本高的问题。
为解决上述技术问题，本发明提供一种等离子体增强化学气相沉积装置，包括反应腔室及位于所述反应腔室内的第一电极与第二电极，所述第一电极与所述第二电极相对设置，所述第二电极面对所述第一电极一侧用于放置玻璃基板，所述第二电极包括面对所述第一电极的第一表面，所述第一表面设有凹槽，所述玻璃基板与所述凹槽之间形成间隙用于流动受热气体。
一种实施方式中，所述凹槽阵列分布于所述第一表面，所述凹槽的间距不大于0.04毫米。
一种实施方式中，所述第二电极为铝制电极，所述第一表面上设有氧化铝层，所述氧化铝层为所述第二电极自然氧化形成。
一种实施方式中，所述凹槽包括槽口与槽底，所述槽口的尺寸大于所述槽底的尺寸。
一种实施方式中，所述凹槽的深度相同。
一种实施方式中，所述第一表面还设有阵列分布的连接槽，所述连接槽连通相邻的所述凹槽。
一种实施方式中，所述第一表面还设有阵列排布的凸起，每两个所述凸起之间设有至少一个所述凹槽，每两个所述凹槽之间设有至少一个所述凸起。
一种实施方式中，所述凸起包括顶部与底部，所述底部的尺寸大于所述顶部的尺寸。
一种实施方式中，所述等离子体增强化学气相沉积装置还包括电阻丝，所述电阻丝位于所述第二电极内，所述电阻丝用于加热所述第二电极。
一种实施方式中，所述等离子体增强化学气相沉积装置还包括射频馈入单元，所述射频馈入单元电连接所述第一电极，用于在所述反应腔室的内部产生等离子体增强化学气相沉积反应。
本发明的有益效果如下：凹槽形成玻璃基板与第二电极之间的间隙，受热的气体均匀分布在玻璃基板表面，使玻璃基板均匀受热，由于凹槽凹陷于第一表面，即使多次使用后第二电极也不会被磨损导致玻璃基板受热不均匀，提高了产品良率，降低了生产成本。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的明显变形方式。
图1为本发明实施例一提供的等离子体增强化学气相沉积装置的结构示意图。
图2为本发明实施例一提供的等离子体增强化学气相沉积装置的第二电极的部分放大示意图。
图3为本发明实施例一提供的等离子体增强化学气相沉积装置的第二电极的俯视图。
图4为产生感生电荷的示意图。
图5为本发明实施例二提供的等离子体增强化学气相沉积装置的第二电极的部分放大示意图。
图6为本发明实施例二提供的等离子体增强化学气相沉积装置的第二电极的俯视图。
图7为本发明实施例三提供的等离子体增强化学气相沉积装置的第二电极的部分放大示意图。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
请参阅图1，本发明实施例一提供的等离子体增强化学气相沉积装置包括反应腔室10、第一电极12及第二电极14，具体的，反应腔室10为密封的腔体，第一电极12和第二电极14位于反应腔室10内，第一电极12与第二电极14相对设置，第二电极14面对第一电极12一侧用于放置玻璃基板20，即玻璃基板20搁置于第二电极14上，以在反应腔室10的内部产生等离子体增强化学气相沉积反应，从而在玻璃基板20背离第二电极14一侧的表面上沉积膜层。一种实施方式中，沉积于第二电极14上的膜层可以为SiN薄膜、SiO薄膜或ASi薄膜。具体的，等离子体增强化学气相沉积装置还包括射频馈入单元84、进气管路82、出气泵88等装置，射频馈入单元84电连接第一电极12，进气管路82连通至第一电极12，射频馈入单元84向第一电极12馈电，第一电极12设有开孔120，从第一电极12的开孔120向玻璃基板20表面输出的均匀的气体进行等离子体增强化学气相沉积反应。出气泵88用于泵出等离子体增强化学气相沉积反应结束后反应腔室10内剩余的气体。本实施例中，第二电极14对玻璃基板20均匀加热，以使反应腔室10中的等离子体50均匀沉积在玻璃基板20的表面，从而形成厚度均匀的膜层。一种实施方式中，等离子体增强化学气相沉积装置还包括电阻丝86，电阻丝86位于第二电极14内，电阻丝86用于加热第二电极14。具体的，电阻丝86均匀分布在第二电极14内，以使第二电极14对玻璃基板20的加热均匀。
结合图2和图3，本实施例中，第二电极14包括面对第一电极12的第一表面140，第一表面140设有凹槽40，玻璃基板20与凹槽40之间形成间隙用于流动受热气体。一种实施方式中，凹槽40通过压花工艺形成，易于实现。凹槽40形成玻璃基板20与第二电极14之间的间隙，当电阻丝86对第二电极14进行加热时，受热的第二电极14对放置于第二电极14上的玻璃基板20进行加热，玻璃基板20与第二电极14之间受热的气体可以在玻璃基板20与第二电极14之间的间隙流动，从而提高玻璃基板20的受热均匀性，提高了形成于玻璃基板20表面的膜层的均匀性，避免玻璃基板20成膜后出现斑点或显示亮度不均匀的现象，提高了产品良率，降低了生产成本。进一步的，由于凹槽40凹陷于第一表面140，玻璃基板20直接接触第二电极14的第一表面140或第一表面140上的其他层结构，玻璃基板20从第二电极14上取出、放置或移动的过程中，凹槽40不会被磨损，玻璃基板20与第二电极14之间的间隙一直存在，第一电极12进行多次使用后依然可以均匀加热玻璃基板20，并且第二电极14也不会被磨损而产生残渣而导致后续的等离子体增强化学气相沉积出现缺陷，提高了产品良率，降低了生产成本。
本实施例中，凹槽40阵列分布于第一表面140，并且凹槽40布满第一表面140，以使玻璃基板20面对第二电极14的一侧表面的各部位都能均匀受热，从而使玻璃基板20整体的受热均匀。阵列排布的凹槽40间距相同，一种实施方式中，凹槽40的横向间距x1和纵向间距y1相等，有利于增强玻璃基板20的受热均匀性。本实施例中，凹槽40的间距不大于0.04毫米，一种实施方式中，凹槽40的横向间距x1和纵向间距y1均为0.0316毫米，凹槽40之间的间距较小，减小了玻璃基板20对应凹槽40的部分与对应凹槽40之间的部分的温度差，进一步提高了玻璃基板20的受热均匀性。一种实施方式中，凹槽40的横截面为正方形，正方形的边长为0.0315毫米，凹槽40较小的截面尺寸减小了玻璃基板20对应凹槽40的部分与对应凹槽40之间的部分的温度差，同时，由于凹槽40的截面尺寸较小，第一表面140可以设置更多的凹槽40，从而进一步提高了玻璃基板20的受热均匀性。正方形的边长与凹槽40的间距尺寸相同，使玻璃基板20对应凹槽40的部分与对应凹槽40之间的部分的面积相同，减小了玻璃基板20对应凹槽40的部分与对应凹槽40之间的部分的温度差，进一步提高了玻璃基板20的受热均匀性。其他实施方式中，凹槽40的横截面也可以为圆形等形状。
一种实施方式中，每个凹槽40的深度相同，具体的，由于凹槽40的截面尺寸相同，相同深度的凹槽40具有相同的容积，即玻璃基板20与第二电极14之间的间隙尺寸相同，从而有利于提高玻璃基板20的受热均匀性。
本实施例中，凹槽40包括槽口44与槽底42，槽口44的尺寸大于槽底42的尺寸。具体的，槽口44为凹槽40与第一表面140的交界面，槽底42为凹槽40的最深处。槽口44的尺寸大于槽底42的尺寸，可以理解为凹槽40的纵截面为梯形，梯形的短边位于槽底42。纵截面为梯形的凹槽40易于制作，且使用模具进行压花等操作时易于拔出模具。
一种实施方式中，凹槽40的槽口44位置设有倒角，一方面防止槽口44尖锐而刮伤玻璃基板20，另一方面有利于受热气体在凹槽40内部与外部之间的流动。
凹槽40形成玻璃基板20与第二电极14之间的间隙，受热的气体均匀分布在玻璃基板20表面，使玻璃基板20均匀受热，由于凹槽40凹陷于第一表面140，即使多次使用后第二电极14也不会被磨损导致玻璃基板20受热不均匀，提高了产品良率，降低了生产成本。
本实施中，第二电极14的第一表面140上还设有一层金属氧化层30，结合图4，金属氧化层30用于产生感生电荷300以在玻璃件上沉积等离子体50形成膜层。金属氧化层30设置于第一表面140上，并且在凹槽40的内壁、槽底42表面均有金属氧化层30，以使第二电极14与玻璃基板20之间产生均匀的感生电荷300。一种实施方式中，金属氧化层30为涂覆于第二电极14表面的膜层，其他实施方式中，第二电极14为铝制电极，第一表面140上设有氧化铝层，即金属氧化层30，氧化铝层为第二电极14自然氧化形成，具体的，铝制电极保留在空气中会与空气中的氧气反应，在第一表面140形成一层致密的膜层，即氧化铝层。自然形成氧化铝层的过程无需添加特殊的加工步骤，且得到的氧化铝层均匀覆盖第二电极14，能够再被第二电极14加热的过程中产生均匀的感生电荷300，从而在玻璃基板20表面得到均匀的等离子体增强化学气相沉积效果。
请参阅图5和图6，本发明实施例二提供的等离子体增强化学气相沉积装置与实施例一的区别在于，第一表面140还设有连接槽60，连接槽60阵列分布，并且连接槽60连通相邻的凹槽40。具体的，每个连接槽60连接于一对凹槽40之间，对于横截面为正方形的凹槽40，每个凹槽40连接四个连接槽60，从而将每个凹槽40与该凹槽40周围的四个凹槽40连通。本实施例中，连接槽60的纵截面为圆形或矩形。连接槽60连通凹槽40，有利于各凹槽40之间的受热气体流动，即有利于受热气体在不同凹槽40之间流动，提高了玻璃基板20的受热均匀性。一种实施方式中，位于第一表面140最靠近边缘的凹槽40通过连接槽60连接至第二电极14的外部，从而使所有的凹槽40与连接槽60均连接至第二电极14的外部，提高受热气体的流动性，从而提高玻璃基板20的受热均匀性，玻璃基板20表面成膜均匀，等离子体增强化学气相沉积效果好，提高了产品良率，降低了生产成本。
请参阅图7，本发明实施例三提供的等离子体增强化学气相沉积装置与实施例一的区别在于，第一表面140还设有阵列排布的凸起70，每两个凸起70之间设有至少一个凹槽40，每两个凹槽40之间设有至少一个凸起70。具体的，凸起70与凹槽40间隔排列，凸起70将玻璃基板20支撑于第二电极14上，第一表面140与玻璃基板20的间隙及凹槽40增大了玻璃基板20和第二电极14之间的间隙，提高受热气体的流动性，从而提高玻璃基板20的受热均匀性，玻璃基板20表面成膜均匀，等离子体增强化学气相沉积效果好，提高了产品良率，降低了生产成本。
一种实施方式中，每两个凹槽40之间设有一个凸起70，每两个凸起70之间设有一个凹槽40，每个凸起70与每个凹槽40之间的间距p为0.0315毫米，从而使凸起70和凹槽40均匀分布。本实施例中，凸起70包括顶部与底部，底部的尺寸大于顶部的尺寸。具体的，底部为凸起70与第一表面140的交界面，顶部为凸起70的最高处。底部的尺寸大于顶部的尺寸，可以理解为凸起70的纵截面为梯形，梯形的短边位于顶部。纵截面为梯形的凸起70易于制作，且使用模具操作时易于拔出模具。
凹槽40形成玻璃基板20与第二电极14之间的间隙，受热的气体均匀分布在玻璃基板20表面，使玻璃基板20均匀受热，由于凹槽40凹陷于第一表面140，即使多次使用后第二电极14也不会被磨损导致玻璃基板20受热不均匀，提高了产品良率，降低了生产成本。
以上所揭露的仅为本发明几种较佳实施例而已，当然不能以此来限定本发明之权利范围，本领域普通技术人员可以理解实现上述实施例的全部或部分流程，并依本发明权利要求所作的等同变化，仍属于发明所涵盖的范围。
Claims (10)
1.一种等离子体增强化学气相沉积装置，其特征在于，包括反应腔室及位于所述反应腔室内的第一电极与第二电极，所述第一电极与所述第二电极相对设置，所述第二电极面对所述第一电极一侧用于放置玻璃基板，所述第二电极包括面对所述第一电极的第一表面，所述第一表面设有凹槽，所述玻璃基板与所述凹槽之间形成间隙用于流动受热气体。
2.根据权利要求1所述的等离子体增强化学气相沉积装置，其特征在于，所述凹槽阵列分布于所述第一表面，所述凹槽的间距不大于0.04毫米。
3.根据权利要求2所述的等离子体增强化学气相沉积装置，其特征在于，所述第二电极为铝制电极，所述第一表面上设有氧化铝层，所述氧化铝层为所述第二电极自然氧化形成。
4.根据权利要求3所述的等离子体增强化学气相沉积装置，其特征在于，所述凹槽包括槽口与槽底，所述槽口的尺寸大于所述槽底的尺寸。
5.根据权利要求4所述的等离子体增强化学气相沉积装置，其特征在于，所述凹槽的深度相同。
6.根据权利要求5所述的等离子体增强化学气相沉积装置，其特征在于，所述第一表面还设有阵列分布的连接槽，所述连接槽连通相邻的所述凹槽。
7.根据权利要求4所述的等离子体增强化学气相沉积装置，其特征在于，所述第一表面还设有阵列排布的凸起，每两个所述凸起之间设有至少一个所述凹槽，每两个所述凹槽之间设有至少一个所述凸起。
8.根据权利要求7所述的等离子体增强化学气相沉积装置，其特征在于，所述凸起包括顶部与底部，所述底部的尺寸大于所述顶部的尺寸。
9.根据权利要求1至8任意一项所述的等离子体增强化学气相沉积装置，其特征在于，所述等离子体增强化学气相沉积装置还包括电阻丝，所述电阻丝位于所述第二电极内，所述电阻丝用于加热所述第二电极。
10.根据权利要求9所述的等离子体增强化学气相沉积装置，其特征在于，所述等离子体增强化学气相沉积装置还包括射频馈入单元，所述射频馈入单元电连接所述第一电极，用于在所述反应腔室的内部产生等离子体增强化学气相沉积反应。
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