CN105914256A - Perc晶体硅太阳能电池的制造方法 - Google Patents
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 11
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 11
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
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- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
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Abstract
本发明涉及晶体硅太阳能电池的制造技术，具体是一种PERC晶体硅太阳能电池的制造方法。其制造过程经过制绒、扩散、刻蚀、镀Al2O3、退火及镀背面SiNx、镀正面SiNx、激光开槽或开孔、丝网印刷、烧结、测试各步骤；所述退火及镀背面SiNx在镀膜设备中同步完成，其具体步骤是：镀Al2O3后的半成品先在镀膜设备中加热至450－550℃，加热时间600－1200s；再通入反应气体镀SiNx膜，镀膜温度450－550℃，镀膜时间1000－2000s。本发明能够简化制造工艺、减少生产时间、降低生产成本、改善电池性能。
Description
技术领域
本发明涉及晶体硅太阳能电池的制造技术，具体是一种PERC晶体硅太阳能电池的制造方法。
背景技术
随着晶体硅太阳电池技术的不断提高，传统结构的单晶硅太阳电池的量产转换效率已达19.8％，多晶硅太阳电池量产转换效率已达18.5％。传统结构电池效率已没有太大的提升空间，电池效率的提升必须依靠新型结构的晶体硅太阳电池发展。在目前已有的硅基体高效电池技术中，钝化发射极及背表面太阳电池(PERC电池)易于和常规电池工艺相结合，新设备投入少，成本较其他技术路线低，是目前高效电池中最适合量产化的技术，研究其量产工艺对PERC电池的大规模生产具有非常好的指导性作用。
常规的Al2O3PERC电池的生产工艺为制绒→扩散→刻蚀→镀Al2O3→退火→镀背面SiNx→镀正面SiNx→激光开槽或开孔→丝网印刷→烧结→测试。PERC电池背面钝化方式主要采用ALD及PECVD制备Al2O3薄膜的方式，而Al2O3的钝化效果需经过退火工艺才会显现。目前Al2O3退火工艺主要方法为在500-550℃，氮气氛围的石英管内放置600-1800s。此退火方式需要在常规电池产线上新增退火设备，因此新增成本较高。并且退火时间为600-1800s，加上升降温时间，整体工艺时间为1800-3000s，设备长时间高温运行，用电成本较高，产量较少。
发明内容
本发明所要解决的技术问题是，提供一种能够简化制造工艺、减少生产时间、降低生产成本、改善电池性能的PERC晶体硅太阳能电池的制造方法。
本发明PERC晶体硅太阳能电池的制造方法，其制造过程经过制绒、扩散、刻蚀、镀Al2O3、退火及镀背面SiNx、镀正面SiNx、激光开槽或开孔、丝网印刷、烧结、测试各步骤；所述退火及镀背面SiNx在镀膜设备中同步完成，其具体步骤是：镀Al2O3后的半成品先在镀膜设备中加热至450－550℃，加热时间600－1200s；再通入反应气体镀SiNx膜，镀膜温度450－550℃，镀膜时间1000－2000s。
优选地，镀膜设备中加热温度为500℃，加热时间800s.
优选地，镀膜设备中镀膜温度500℃，镀膜时间1500s。
本发明的积极效果体现在：
1、减少了退火设备的投入，使PERC工艺更易通过常规电池产线实现量产，成本大幅度降低；
2、大幅减少了整体工艺时间，整体工艺时间可缩短至少1800s，减少用电成本；
3、在H+氛围下增强了电池背面钝化效果，在高温环境下加快了氮化硅薄膜沉积速率。
具体实施方式
本发明实用例的PERC晶体硅太阳能电池的制造方法步骤如下：
1、对单晶硅片进行制绒处理，形成金字塔绒面；
2、扩散制备PN结；
3、抛光去除边结及表面缺陷,使背表面平整；
4、通过ALD沉积Al2O3；
5、在镀膜设备中同步完成退火及镀背面SiNx，先在镀膜设备中加热至500℃，加热时间800s；再通入反应气体镀SiNx膜，镀膜温度500℃，镀膜时间1500s。；
6、使用PECVD镀正面SiNx减反射膜；
7、在背表面使用激光开槽；
8、丝网印刷形成正电极，背电极及背场；
9、烧结使金属与硅之间形成良好的欧姆接触；
10、测试电池的电性能。
作为对比例，以常规方法制造相同规格的PERC电池，与上述实施例的方法区别仅在于退火和镀背面SiNx膜在各自的专用设备中完成。
本发明方法与对比例方法制备的两组PERC电池的电性能见下表：
从对比数据可以看出，本发明方法，效率较常规先退火，后镀SiNx提高0.05％，主要为短路电流提高9mA，可见此工艺不仅可大幅减少成本及工艺时间，对电性能也会有所改善，是非常适合PERC电池量产的一种工艺。
Claims (3)
1.一种PERC晶体硅太阳能电池的制造方法，其制造过程经过制绒、扩散、刻蚀、镀Al2O3、退火及镀背面SiNx 、镀正面SiNx、激光开槽或开孔、丝网印刷、烧结、测试各步骤；其特征是：
所述退火及镀背面SiNx在镀膜设备中同步完成，其具体步骤是：镀Al2O3后的半成品先在镀膜设备中加热至450－550℃，加热时间600－1200s；再通入反应气体镀SiNx膜，镀膜温度450－550℃，镀膜时间1000－2000s。
2.根据权利要求1所述的PERC晶体硅太阳能电池的制造方法，其特征是：镀膜设备中加热温度为500℃，加热时间800s。
3.根据权利要求2所述的PERC晶体硅太阳能电池的制造方法，其特征是：镀膜设备中镀膜温度500℃，镀膜时间1500s。
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106449870A (zh) * | 2016-09-14 | 2017-02-22 | 湖南红太阳光电科技有限公司 | 一种perc太阳能电池生产线 |
| CN107731940A (zh) * | 2017-08-22 | 2018-02-23 | 北京普扬科技有限公司 | 一种perc多晶硅太阳能电池及其制备方法 |
| CN107731960A (zh) * | 2017-10-16 | 2018-02-23 | 常州亿晶光电科技有限公司 | Perc电池背面氮化硅多层膜的制备方法 |
| CN107749429A (zh) * | 2017-10-12 | 2018-03-02 | 江西展宇新能源股份有限公司 | 一种提升PERC电池背钝化性能的AlOx沉积工艺 |
| CN108024457A (zh) * | 2017-12-01 | 2018-05-11 | 湖南文理学院 | 一种高分子柔性导电薄膜的制备方法 |
| CN109616556A (zh) * | 2018-12-18 | 2019-04-12 | 韩华新能源（启东）有限公司 | 一种硅片背面退火和正面镀膜一体化的方法以及一种电池片的制备方法 |
| CN110277470A (zh) * | 2019-03-13 | 2019-09-24 | 国家电投集团西安太阳能电力有限公司 | 一种太阳能perc电池的制备方法 |
| CN112071928A (zh) * | 2020-09-11 | 2020-12-11 | 晋能清洁能源科技股份公司 | 一种perc电池片的制备方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20150311378A1 (en) * | 2013-09-16 | 2015-10-29 | Solexel, Inc. | Aluminum oxide passivation and damage removal for solar cells |
| CN105449042A (zh) * | 2015-12-29 | 2016-03-30 | 浙江晶科能源有限公司 | 钝化发射极背表面电池的制备方法 |
| CN105810779A (zh) * | 2016-04-08 | 2016-07-27 | 苏州阿特斯阳光电力科技有限公司 | 一种perc太阳能电池的制备方法 |
-
2016
- 2016-04-19 CN CN201610244347.XA patent/CN105914256A/zh active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20150311378A1 (en) * | 2013-09-16 | 2015-10-29 | Solexel, Inc. | Aluminum oxide passivation and damage removal for solar cells |
| CN105449042A (zh) * | 2015-12-29 | 2016-03-30 | 浙江晶科能源有限公司 | 钝化发射极背表面电池的制备方法 |
| CN105810779A (zh) * | 2016-04-08 | 2016-07-27 | 苏州阿特斯阳光电力科技有限公司 | 一种perc太阳能电池的制备方法 |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106449870A (zh) * | 2016-09-14 | 2017-02-22 | 湖南红太阳光电科技有限公司 | 一种perc太阳能电池生产线 |
| CN107731940A (zh) * | 2017-08-22 | 2018-02-23 | 北京普扬科技有限公司 | 一种perc多晶硅太阳能电池及其制备方法 |
| CN107749429A (zh) * | 2017-10-12 | 2018-03-02 | 江西展宇新能源股份有限公司 | 一种提升PERC电池背钝化性能的AlOx沉积工艺 |
| CN107749429B (zh) * | 2017-10-12 | 2019-07-16 | 江西展宇新能源股份有限公司 | 一种提升PERC电池背钝化性能的AlOx沉积工艺 |
| CN107731960A (zh) * | 2017-10-16 | 2018-02-23 | 常州亿晶光电科技有限公司 | Perc电池背面氮化硅多层膜的制备方法 |
| WO2019076065A1 (zh) * | 2017-10-16 | 2019-04-25 | 常州亿晶光电科技有限公司 | Perc电池背面氮化硅多层膜的制备方法 |
| CN108024457A (zh) * | 2017-12-01 | 2018-05-11 | 湖南文理学院 | 一种高分子柔性导电薄膜的制备方法 |
| CN108024457B (zh) * | 2017-12-01 | 2020-02-14 | 湖南文理学院 | 一种高分子柔性导电薄膜的制备方法 |
| CN109616556A (zh) * | 2018-12-18 | 2019-04-12 | 韩华新能源（启东）有限公司 | 一种硅片背面退火和正面镀膜一体化的方法以及一种电池片的制备方法 |
| CN110277470A (zh) * | 2019-03-13 | 2019-09-24 | 国家电投集团西安太阳能电力有限公司 | 一种太阳能perc电池的制备方法 |
| CN112071928A (zh) * | 2020-09-11 | 2020-12-11 | 晋能清洁能源科技股份公司 | 一种perc电池片的制备方法 |
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