CN107768482A - 一种晶体硅太阳能电池热氧工艺 - Google Patents
一种晶体硅太阳能电池热氧工艺 Download PDFInfo
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 title claims abstract description 64
- 239000001301 oxygen Substances 0.000 title claims abstract description 64
- 229910052760 oxygen Inorganic materials 0.000 title claims abstract description 64
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 61
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- 239000013078 crystal Substances 0.000 title claims abstract description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 30
- 238000005530 etching Methods 0.000 claims abstract description 15
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 15
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 14
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- 238000002161 passivation Methods 0.000 abstract description 5
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract description 4
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- 230000000694 effects Effects 0.000 abstract description 3
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- 125000004430 oxygen atom Chemical group O* 0.000 abstract 1
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- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
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- 238000013083 solar photovoltaic technology Methods 0.000 description 1
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Abstract
本发明专利涉及一种晶体硅太阳能电池热氧工艺,该方法是在室温下,通过热氧炉在刻蚀后的硅片绒面生长厚度为2~12nm 的二氧化硅,该二氧化硅采用热氧炉热氧工艺形成的二氧化硅膜厚度、均匀性及致密性比刻蚀臭氧工艺好,二氧化硅膜通过氧原子与悬挂键形成桥键氧,该键比较稳定,对硅片表面有钝化作用,而且热生长二氧化硅膜致密度较高,阻止了硅片表面氢原子的溢出,增强了二氧化硅和氮化硅双层膜的钝化效果,一定程度上提升了太阳能电池的转换效率。
Description
技术领域
本发明涉及太阳能光伏技术领域,特别是涉及一种晶体硅太阳能电池热氧工艺。
背景技术
近年来,太阳能电池片生产技术不断进步,生产成本不断降低,转换效率不断提高,使得光伏发电的应用日益普及并迅猛发展,逐渐成为电力供应的重要来源。太阳能电池片可以在阳光的照射下,把光能转换为电能,实现光伏发电。
太阳能电池片的生产工艺比较复杂,简单说来,太阳能电池的制作过程主要包括:制绒、扩散、刻蚀、热氧、PECVD镀膜、丝网印刷和烧结、测试等。太阳电池片是一种将光能转换成电能的电池片,它对光的吸收和利用直接决定着转换效率和输出功率. 为了提高晶体硅太阳电池对光的吸收,减少光在硅片表面的反射,通常采取表面织构以及沉积减反射薄膜的方法,从而改善电池片性能. 目前,工业化生产中常采用等离子体增强化学气相沉积(PECVD) 系统在硅片表面沉积氮化硅薄膜,但是氮化硅与晶体硅界面由于晶格失配严重,会导致严重的界面复合,其性质远不如二氧化硅和晶体硅 . 为同时达到比较理想的钝化和减反效果,采用热氧工艺低温生长二氧化硅薄膜, 然后再PECVD 沉积氮化硅膜,优化的二氧化硅、氮化硅双层膜能起到钝化和减反射的双重作用,明显改善太阳电池对光的吸收利用和光生载流子的输出。因此,提出一种在刻蚀后硅片表面制备一层均匀性,致密性较好的氧化层的方法,对提高钝化和减反射的作用,最终提高太阳能电池转化效率显得尤为重要。
发明内容
一种晶体硅太阳能电池热氧工艺,:经过刻蚀后,在硅片绒面上制备一层二氧化硅致密的氧化膜。
一种晶体硅太阳能电池热氧工艺:所述二氧化硅致密的氧化膜是使用热氧炉进行热氧工艺制备而成。
一种晶体硅太阳能电池热氧工艺:所述热氧工艺包括以下步骤:
(1)将硅片进行制绒、扩散、刻蚀。
(2)将刻蚀后的硅片在热氧炉中进行热氧工艺,使硅片绒面在热氧工艺中氧化得到2-12nm的二氧化硅致密的氧化膜。
(3)将制备好的硅片进行PECVD镀膜,丝网正反面电极印刷,烧结、测试。
4. 一种晶体硅太阳能电池热氧工艺:步骤(3)中的热氧工艺控制氧气流量为1-5L/min,氮气为5-30L/min,时间为10-30min。
5.一种晶体硅太阳能电池热氧工艺热氧工艺共9个步骤,分别为:(1)准备阶段;(2)进舟阶段;(3)出舟阶段;(4)检漏阶段;(5)加热阶段;(6)热氧化阶段;(7)冷却阶段;(8)进舟阶段;(9)出舟阶段。
具体实施方式
实施例1:
一种晶体硅太阳能电池热氧工艺:取硅片电阻率为1-3Ω.cm, 156.75mmX156.75mm 规格的P型多晶硅片500pcs,将硅片进行制绒、扩散、刻蚀,上述步骤中关闭臭氧发生器,将刻蚀后的硅片在热氧炉中进行热氧工艺,使硅片绒面在热氧工艺中氧化形成氧化膜,热氧工艺的氧气流量为1.2L/min,氮气流量为8L/min,时间为16min,将制备好的硅片进行PECVD镀膜,丝网正反面电极印刷,烧结,测试。
实施例2
一种晶体硅太阳能电池热氧工艺:取硅片电阻率为1-3Ω.cm 156.75mmX156.75mm 规格的P型多晶硅片500pcs,将硅片进行制绒、扩散、刻蚀,上述步骤中关闭臭氧发生器,将刻蚀后的硅片在热氧炉中进行热氧工艺,使硅片绒面在热氧工艺中氧化形成氧化膜,热氧工艺的氧气流量为1L/min,氮气流量为5L/min,时间为10min,将制备好的硅片进行PECVD镀膜,丝网正反面电极印刷,烧结,测试。
实施例3
一种晶体硅太阳能电池热氧工艺:取硅片电阻率为1-3Ω.cm ,156.75mmX156.75mm 规格的P型多晶硅片500pcs,将硅片进行制绒、扩散、刻蚀,上述步骤中关闭臭氧发生器,将刻蚀后的硅片在热氧炉中进行热氧工艺,使硅片绒面在热氧工艺中氧化形成氧化膜,热氧工艺的氧气流量为5L/min,氮气流量为30L/min,时间为30min,将制备好的硅片进行PECVD镀膜,丝网正反面电极印刷,烧结,测试。
实施例4
一种晶体硅太阳能电池热氧工艺:取硅片电阻率为1-3Ω.cm ,156.75mmX156.75mm 规格的P型多晶硅片500pcs,将硅片进行制绒、扩散、刻蚀,上述步骤中关闭臭氧发生器,将刻蚀后的硅片在热氧炉中进行热氧工艺,使硅片绒面在热氧工艺中氧化形成氧化膜,热氧工艺的氧气流量为6L/min,氮气流量为35L/min,时间为8min,将制备好的硅片进行PECVD镀膜,丝网正反面电极印刷,烧结,测试。
对比例1
取硅片电阻率为1-3Ω.cm 的156.75mmX156.75mm 规格的P型多晶硅片500pcs,将硅片进行制绒、扩散、刻蚀(开臭氧发射器)使硅片绒面在臭氧中氧化形成氧化膜,臭氧发生器的氧气流量为20L/min,氮气流量30L/min。将制备好的硅片进行PECVD镀膜,丝网正反面电极印刷,烧结,测试。
表1:各实施例和对比例电性能参数对比:
由数据可以看出,在本发明范围内的实施例的效率较本发明范围之外的实施例4和采用常规工艺的对比例1都有提高。
Claims (5)
1.一种晶体硅太阳能电池热氧工艺,其特征在于:经过刻蚀后,在硅片绒面上制备一层二氧化硅致密的氧化膜。
2.如权利要求1所述的一种晶体硅太阳能电池热氧工艺,其特征在于:所述二氧化硅致密的氧化膜是使用热氧炉进行热氧工艺制备而成。
3.如权利要求2 所述的一种晶体硅太阳能电池热氧工艺,其特征在于,所述热氧工艺包括以下步骤:
(1)将硅片进行制绒、扩散、刻蚀;
(2)将刻蚀后的硅片在热氧炉中进行热氧工艺,使硅片绒面在热氧工艺中氧化得到2-12nm的二氧化硅致密的氧化膜;
(3)将制备好的硅片进行PECVD镀膜,丝网正反面电极印刷,烧结、测试。
4.如权利要求3所述的一种晶体硅太阳能电池热氧工艺,其特征在于:步骤(3)中的热氧工艺控制氧气流量为1-5L/min,氮气为5-30L/min,时间为10-30min。
5.如权利要求2所述的一种晶体硅太阳能电池热氧工艺,其特征在于热氧工艺共9个步骤,分别为:(1)准备阶段;(2)进舟阶段;(3)出舟阶段;(4)检漏阶段;(5)加热阶段;(6)热氧化阶段;(7)冷却阶段;(8)进舟阶段;(9)出舟阶段。
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CN112420873A (zh) * | 2020-11-30 | 2021-02-26 | 中建材浚鑫科技有限公司 | 一种适用于m10尺寸的电池片的热氧化方法 |
CN114597267A (zh) * | 2022-05-07 | 2022-06-07 | 正泰新能科技有限公司 | 一种TOPCon电池及其制备方法 |
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JP2005026534A (ja) * | 2003-07-04 | 2005-01-27 | Sharp Corp | 半導体デバイスおよびその製造方法 |
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CN114597267A (zh) * | 2022-05-07 | 2022-06-07 | 正泰新能科技有限公司 | 一种TOPCon电池及其制备方法 |
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