CN109148643B - 一种解决ald方式的perc电池在电注入或光注入后效率降低的方法 - Google Patents
一种解决ald方式的perc电池在电注入或光注入后效率降低的方法 Download PDFInfo
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- CN109148643B CN109148643B CN201810887953.2A CN201810887953A CN109148643B CN 109148643 B CN109148643 B CN 109148643B CN 201810887953 A CN201810887953 A CN 201810887953A CN 109148643 B CN109148643 B CN 109148643B
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- 238000000034 method Methods 0.000 title claims abstract description 54
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 title claims abstract description 22
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 title claims abstract description 22
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 title claims abstract description 22
- 238000002347 injection Methods 0.000 title abstract description 47
- 239000007924 injection Substances 0.000 title abstract description 47
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 25
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 25
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims abstract description 18
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 16
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910000077 silane Inorganic materials 0.000 claims abstract description 16
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 14
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims abstract description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 10
- 239000010703 silicon Substances 0.000 claims abstract description 10
- 235000013842 nitrous oxide Nutrition 0.000 claims abstract description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 10
- 229910002804 graphite Inorganic materials 0.000 claims description 10
- 239000010439 graphite Substances 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 238000002360 preparation method Methods 0.000 claims description 4
- 238000002513 implantation Methods 0.000 claims 1
- 238000000151 deposition Methods 0.000 abstract description 12
- 238000005530 etching Methods 0.000 abstract description 4
- 238000005498 polishing Methods 0.000 abstract description 4
- 238000007650 screen-printing Methods 0.000 abstract description 4
- 238000005245 sintering Methods 0.000 abstract description 4
- 238000005137 deposition process Methods 0.000 abstract description 3
- 238000007639 printing Methods 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Formation Of Insulating Films (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims (3)
Priority Applications (1)
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CN201810887953.2A CN109148643B (zh) | 2018-08-06 | 2018-08-06 | 一种解决ald方式的perc电池在电注入或光注入后效率降低的方法 |
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CN201810887953.2A CN109148643B (zh) | 2018-08-06 | 2018-08-06 | 一种解决ald方式的perc电池在电注入或光注入后效率降低的方法 |
Publications (2)
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CN109148643A CN109148643A (zh) | 2019-01-04 |
CN109148643B true CN109148643B (zh) | 2021-02-09 |
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CN201810887953.2A Active CN109148643B (zh) | 2018-08-06 | 2018-08-06 | 一种解决ald方式的perc电池在电注入或光注入后效率降低的方法 |
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Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109950363A (zh) * | 2019-03-29 | 2019-06-28 | 山西潞安太阳能科技有限责任公司 | 一种perc太阳能电池的背面钝化工艺 |
CN110444610A (zh) * | 2019-07-08 | 2019-11-12 | 江苏润阳悦达光伏科技有限公司 | 正面氮氧化硅太阳电池的制作工艺 |
CN111384209B (zh) * | 2019-12-12 | 2021-06-18 | 横店集团东磁股份有限公司 | Ald方式perc电池降低污染和提升转换效率的方法 |
CN111106184A (zh) * | 2019-12-30 | 2020-05-05 | 东方日升(常州)新能源有限公司 | 提高双面perc电池背面效率的背面膜结构及其镀膜方法 |
CN112234107A (zh) * | 2020-10-12 | 2021-01-15 | 横店集团东磁股份有限公司 | 一种太阳能单晶perc电池及其制备方法 |
CN112768552B (zh) * | 2020-12-11 | 2023-12-22 | 宁波尤利卡太阳能股份有限公司 | 一种双面perc电池的制备方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012164163A1 (en) * | 2011-05-30 | 2012-12-06 | Beneq Oy | A method and a structure for protecting a passivating layer |
CN103400868A (zh) * | 2013-07-08 | 2013-11-20 | 浙江晶科能源有限公司 | 一种新型双层膜背面钝化太阳能电池结构 |
CN104025304A (zh) * | 2012-01-03 | 2014-09-03 | 应用材料公司 | 用于提高si太阳能电池的表面钝化的性能和稳定性的缓冲层 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9559222B2 (en) * | 2013-08-14 | 2017-01-31 | Arizona Board Of Regents On Behalf Of Arizona State University | Method and tool to reverse the charges in anti-reflection films used for solar cell applications |
KR20150024485A (ko) * | 2013-08-26 | 2015-03-09 | 현대중공업 주식회사 | Perl형 태양전지의 제조방법 |
CN106972066B (zh) * | 2017-04-28 | 2019-01-18 | 江苏顺风新能源科技有限公司 | 一种perc电池背面钝化膜层以及基于ald工艺的perc电池制备方法 |
CN107331730B (zh) * | 2017-07-03 | 2019-04-23 | 浙江爱旭太阳能科技有限公司 | 管式perc太阳能电池的修复工艺及制备工艺 |
CN107887453B (zh) * | 2017-10-10 | 2019-03-15 | 横店集团东磁股份有限公司 | 一种双面氧化铝p型perc太阳能电池及制作方法 |
CN107845701A (zh) * | 2017-11-03 | 2018-03-27 | 常州亿晶光电科技有限公司 | Perc电池背面al2o3叠加膜层工艺 |
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2018
- 2018-08-06 CN CN201810887953.2A patent/CN109148643B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012164163A1 (en) * | 2011-05-30 | 2012-12-06 | Beneq Oy | A method and a structure for protecting a passivating layer |
CN104025304A (zh) * | 2012-01-03 | 2014-09-03 | 应用材料公司 | 用于提高si太阳能电池的表面钝化的性能和稳定性的缓冲层 |
CN103400868A (zh) * | 2013-07-08 | 2013-11-20 | 浙江晶科能源有限公司 | 一种新型双层膜背面钝化太阳能电池结构 |
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Denomination of invention: A method for solving the efficiency reduction of perc battery in ALD mode after electric injection or optical injection Effective date of registration: 20211023 Granted publication date: 20210209 Pledgee: Dongyang Branch of China Construction Bank Co.,Ltd. Pledgor: HENGDIAN GROUP DMEGC MAGNETICS Co.,Ltd. Registration number: Y2021330002002 |
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Date of cancellation: 20230628 Granted publication date: 20210209 Pledgee: Dongyang Branch of China Construction Bank Co.,Ltd. Pledgor: HENGDIAN GROUP DMEGC MAGNETICS Co.,Ltd. Registration number: Y2021330002002 |