CN107887453B - 一种双面氧化铝p型perc太阳能电池及制作方法 - Google Patents
一种双面氧化铝p型perc太阳能电池及制作方法 Download PDFInfo
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- CN107887453B CN107887453B CN201710937780.6A CN201710937780A CN107887453B CN 107887453 B CN107887453 B CN 107887453B CN 201710937780 A CN201710937780 A CN 201710937780A CN 107887453 B CN107887453 B CN 107887453B
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- silicon wafer
- aluminium oxide
- silicon nitride
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- solar battery
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 title claims abstract description 131
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 title claims abstract description 32
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 title claims abstract description 32
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 title claims abstract description 32
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 84
- 239000010703 silicon Substances 0.000 claims abstract description 84
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 83
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 49
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 47
- 238000007747 plating Methods 0.000 claims abstract description 32
- 235000008216 herbs Nutrition 0.000 claims abstract description 19
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 18
- 210000002268 wool Anatomy 0.000 claims abstract description 18
- 238000005245 sintering Methods 0.000 claims abstract description 14
- 239000004411 aluminium Substances 0.000 claims abstract description 13
- 238000004140 cleaning Methods 0.000 claims abstract description 12
- 238000000151 deposition Methods 0.000 claims abstract description 11
- 230000008021 deposition Effects 0.000 claims abstract description 11
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 11
- 238000009792 diffusion process Methods 0.000 claims abstract description 7
- 238000007650 screen-printing Methods 0.000 claims abstract description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 34
- 238000000034 method Methods 0.000 claims description 26
- 230000008569 process Effects 0.000 claims description 20
- 229910052757 nitrogen Inorganic materials 0.000 claims description 16
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 13
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 10
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 10
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 10
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 claims description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 8
- 239000003513 alkali Substances 0.000 claims description 5
- 230000005684 electric field Effects 0.000 claims description 5
- 208000020442 loss of weight Diseases 0.000 claims description 5
- 230000000737 periodic effect Effects 0.000 claims description 5
- 239000011148 porous material Substances 0.000 claims description 5
- 238000004260 weight control Methods 0.000 claims description 5
- 238000001039 wet etching Methods 0.000 claims description 4
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 229910001882 dioxygen Inorganic materials 0.000 claims 1
- 230000003628 erosive effect Effects 0.000 claims 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen(.) Chemical compound [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 1
- 238000002310 reflectometry Methods 0.000 abstract description 9
- 238000012546 transfer Methods 0.000 abstract description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical group [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 3
- 229910003978 SiClx Inorganic materials 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 241000407429 Maja Species 0.000 description 1
- YAIQCYZCSGLAAN-UHFFFAOYSA-N [Si+4].[O-2].[Al+3] Chemical compound [Si+4].[O-2].[Al+3] YAIQCYZCSGLAAN-UHFFFAOYSA-N 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 235000013842 nitrous oxide Nutrition 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (7)
Priority Applications (1)
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CN201710937780.6A CN107887453B (zh) | 2017-10-10 | 2017-10-10 | 一种双面氧化铝p型perc太阳能电池及制作方法 |
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CN201710937780.6A CN107887453B (zh) | 2017-10-10 | 2017-10-10 | 一种双面氧化铝p型perc太阳能电池及制作方法 |
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CN107887453A CN107887453A (zh) | 2018-04-06 |
CN107887453B true CN107887453B (zh) | 2019-03-15 |
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CN201710937780.6A Active CN107887453B (zh) | 2017-10-10 | 2017-10-10 | 一种双面氧化铝p型perc太阳能电池及制作方法 |
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Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109148643B (zh) * | 2018-08-06 | 2021-02-09 | 横店集团东磁股份有限公司 | 一种解决ald方式的perc电池在电注入或光注入后效率降低的方法 |
CN109244184B (zh) * | 2018-09-12 | 2020-10-16 | 江苏顺风新能源科技有限公司 | 一种双面氧化铝结构的perc双面电池及其制备方法 |
CN109888060A (zh) * | 2019-03-15 | 2019-06-14 | 通威太阳能(合肥)有限公司 | 一种具有三层钝化层结构的太阳电池及其制备方法 |
CN110699674B (zh) * | 2019-10-10 | 2021-12-24 | 湖南红太阳光电科技有限公司 | 一种低频pecvd沉积氧化铝的方法 |
CN112993079A (zh) * | 2019-12-02 | 2021-06-18 | 阜宁阿特斯阳光电力科技有限公司 | 光伏电池片的制备方法及光伏电池片 |
CN110943146B (zh) * | 2019-12-16 | 2021-12-17 | 通威太阳能(安徽)有限公司 | 一种perc太阳能电池的镀膜方法、制作方法及perc太阳能电池 |
CN111129217B (zh) * | 2019-12-20 | 2021-05-18 | 浙江爱旭太阳能科技有限公司 | 用于制造太阳能电池的方法和太阳能电池 |
CN110828619B (zh) * | 2020-01-09 | 2020-04-10 | 浙江爱旭太阳能科技有限公司 | 一种激光优化绕镀的p型太阳能电池制造方法 |
CN111564530B (zh) * | 2020-06-09 | 2022-07-29 | 山西潞安太阳能科技有限责任公司 | 一种新型晶硅perc电池前氧化层制备工艺 |
CN111710730A (zh) * | 2020-06-29 | 2020-09-25 | 苏州腾晖光伏技术有限公司 | 一种新型p型晶体硅太阳电池及其制备方法 |
CN111916528B (zh) * | 2020-06-29 | 2022-06-24 | 苏州腾晖光伏技术有限公司 | 一种降低letid的p型晶体硅太阳能电池的制备方法 |
CN112652677B (zh) * | 2020-12-09 | 2023-10-27 | 晋能光伏技术有限责任公司 | 一种perc电池背面钝化工艺 |
CN114921771B (zh) * | 2022-05-23 | 2023-09-22 | 平煤隆基新能源科技有限公司 | 一种改善晶硅氧化铝绕镀的pecvd工艺 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105470337A (zh) * | 2015-12-30 | 2016-04-06 | 无锡赛晶太阳能有限公司 | 一种perc太阳能电池及其制备方法 |
CN105826405A (zh) * | 2016-05-17 | 2016-08-03 | 常州天合光能有限公司 | 一种单晶硅双面太阳电池及其制备方法 |
CN107039544A (zh) * | 2017-03-03 | 2017-08-11 | 广东爱康太阳能科技有限公司 | P型perc双面太阳能电池及其制备方法、组件和系统 |
CN107068790A (zh) * | 2017-03-03 | 2017-08-18 | 广东爱康太阳能科技有限公司 | P型perc太阳能电池的制备方法、电池、组件和系统 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
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US20140261666A1 (en) * | 2013-03-13 | 2014-09-18 | Applied Materials, Inc. | Methods of manufacturing a low cost solar cell device |
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2017
- 2017-10-10 CN CN201710937780.6A patent/CN107887453B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105470337A (zh) * | 2015-12-30 | 2016-04-06 | 无锡赛晶太阳能有限公司 | 一种perc太阳能电池及其制备方法 |
CN105826405A (zh) * | 2016-05-17 | 2016-08-03 | 常州天合光能有限公司 | 一种单晶硅双面太阳电池及其制备方法 |
CN107039544A (zh) * | 2017-03-03 | 2017-08-11 | 广东爱康太阳能科技有限公司 | P型perc双面太阳能电池及其制备方法、组件和系统 |
CN107068790A (zh) * | 2017-03-03 | 2017-08-18 | 广东爱康太阳能科技有限公司 | P型perc太阳能电池的制备方法、电池、组件和系统 |
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Denomination of invention: A double-sided alumina p-type perc solar cell and its manufacturing method Effective date of registration: 20211023 Granted publication date: 20190315 Pledgee: Dongyang Branch of China Construction Bank Co.,Ltd. Pledgor: HENGDIAN GROUP DMEGC MAGNETICS Co.,Ltd. Registration number: Y2021330002002 |
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Date of cancellation: 20230628 Granted publication date: 20190315 Pledgee: Dongyang Branch of China Construction Bank Co.,Ltd. Pledgor: HENGDIAN GROUP DMEGC MAGNETICS Co.,Ltd. Registration number: Y2021330002002 |
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