CN111916528B - 一种降低letid的p型晶体硅太阳能电池的制备方法 - Google Patents
一种降低letid的p型晶体硅太阳能电池的制备方法 Download PDFInfo
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- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 29
- 238000002360 preparation method Methods 0.000 title abstract description 9
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 28
- 238000000034 method Methods 0.000 claims abstract description 19
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 18
- 239000011574 phosphorus Substances 0.000 claims abstract description 18
- 238000000137 annealing Methods 0.000 claims abstract description 17
- 238000000151 deposition Methods 0.000 claims abstract description 7
- 230000008569 process Effects 0.000 claims abstract description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 31
- 229910052710 silicon Inorganic materials 0.000 claims description 31
- 239000010703 silicon Substances 0.000 claims description 31
- 230000003647 oxidation Effects 0.000 claims description 25
- 238000007254 oxidation reaction Methods 0.000 claims description 25
- 238000009792 diffusion process Methods 0.000 claims description 15
- 229910017604 nitric acid Inorganic materials 0.000 claims description 10
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 9
- 230000001590 oxidative effect Effects 0.000 claims description 9
- 239000001301 oxygen Substances 0.000 claims description 9
- 229910052760 oxygen Inorganic materials 0.000 claims description 9
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 8
- 239000002253 acid Substances 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 5
- 229910052796 boron Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 238000005498 polishing Methods 0.000 claims description 5
- 238000004140 cleaning Methods 0.000 claims description 3
- 229910052681 coesite Inorganic materials 0.000 claims description 3
- 229910052906 cristobalite Inorganic materials 0.000 claims description 3
- 239000007789 gas Substances 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 239000012535 impurity Substances 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 claims description 3
- 239000005360 phosphosilicate glass Substances 0.000 claims description 3
- 230000035484 reaction time Effects 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052682 stishovite Inorganic materials 0.000 claims description 3
- 229910052905 tridymite Inorganic materials 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 238000007747 plating Methods 0.000 claims description 2
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 claims 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 16
- 239000001257 hydrogen Substances 0.000 abstract description 16
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 16
- 229910004205 SiNX Inorganic materials 0.000 abstract description 7
- 238000004806 packaging method and process Methods 0.000 abstract description 2
- 239000007888 film coating Substances 0.000 abstract 1
- 238000009501 film coating Methods 0.000 abstract 1
- 230000006872 improvement Effects 0.000 description 10
- 239000000243 solution Substances 0.000 description 10
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000002585 base Substances 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 229910017107 AlOx Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000002803 fossil fuel Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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Abstract
本发明提供一种降低LETID的P型晶体硅太阳能电池的制备方法,包括对P型单晶硅片的正面制绒,和形成磷掺杂面,制备选择性发射极;且述P型单晶硅片采用背靠背的方式放置,在背面沉积AlOx层;且在所述正面和背面沉积SiNx层;然后对所述P型单晶硅片进行退火工艺。本发明通过在在SiNx镀膜后,增加退火步骤,调节晶体硅电池内氢浓度,降低由过量氢元素造成的的热辅助光致衰减,进而提高了晶体硅电池封装组件的输出功率。
Description
技术领域
本发明涉及太阳能电池领域,特别涉及一种降低LETID的P型晶体硅太阳能电池的制备方法。
背景技术
常规的化石燃料日益消耗殆尽,在所有的可持续能源中,太阳能无疑是一种最清洁、最普遍和最有潜力的替代能源。目前,在所有的太阳能电池中,硅太阳能电池相比其他类型的太阳能电池,有着优异的电学性能和机械性能,在光伏领域占据着重要的地位。因此,研发高性能的硅太阳能电池已经成为各国光伏企业的主要研究方向。
近年来,热辅助光致衰减(Light and elevated Temperature InducedDegradation,LETID)越来越受到光伏行业的重视。在光和热综合作用下,晶体硅电池封装组件的输出功率明显下降,影响光伏电站的发电量。为了保证光伏电站的发电能力,势必要减少晶体硅电池的热辅助光致衰减。晶体硅电池中氢元素过量的情况下,电池中氢元素的浓度越高,晶体硅光伏电池的热辅助光致衰减越明显。
而现有技术中,晶体硅电池中的氢元素主要主要来自于SiNx层的制备工序,SiNx层是利用等离子增强化学气相沉积的方式进行,反应源主要为硅烷(SiH4)和氨气(NH3),在SiNx层沉积的同时,大量的氢元素进入到SiNx层和硅基体内,造成晶体硅电池的氢元素过量,如过量的氢元素停留在晶体硅电池内,将导致热辅助光致衰减。
因此,亟待通过优化P型晶体硅电池制备方法产生一种提升电池光电转换效率的P型晶体硅太阳电池。
发明内容
鉴于以上所述现有技术的缺点,本发明的目的在于提供一种降低LETID的P型晶体硅太阳能电池的制备方法,所述方法包括以下步骤:
S1、对P型单晶硅片的正面制绒,在所述正面形成陷光绒面;
S2、在所述P型单晶硅片的正面进行磷扩散形成磷掺杂面,形成PN结作为选择性发射极;
S3、清洗所述P型单晶硅片的背面的氧化层,并利用强酸或强碱溶液抛光所述背面,所述背面为电池的非磷掺杂面;
S4、对所述P型单晶硅片的背面进行氧化,形成SiO2氧化层;
S6、所述P型单晶硅片采用背靠背的方式放置,在所述背面沉积AlOx层;
S7、在所述正面和背面沉积SiNx层;
S8、对所述P型单晶硅片进行退火工艺;
S9、在所述背面开槽;
S10、在所述正面和背面形成金属电极。
作为本发明实施方式的进一步改进,所述步骤S8中的退火工艺采用管式退火炉,退火温度500-800摄氏度,退火时间1-30分钟。
作为本发明实施方式的进一步改进,所述S1之前还包括去除硅片表面杂质及机械损伤。
作为本发明实施方式的进一步改进,所述P型单晶硅片包括P型硅片、P型硅片经过硼重掺后的P+硅片以及N型硅片经过硼掺杂后的P型硅片。
作为本发明实施方式的进一步改进,所述S4中氧化方法具体包括采用浓硝酸氧化、臭氧氧化或热氧化进行氧化处理。
作为本发明实施方式的进一步改进,所述氧化处理具体包括采用质量浓度为65%-75%的浓硝酸氧化硅片的表面,控制温度为20-120℃,反应时间不超过10min,完成浓硝酸氧化;采用浓度为10~500ppm的臭氧氧化硅片的表面,控制温度为20-100℃,反应时间不超过10min,完成臭氧氧化;在氧气或者氮氧混合气氛围中对硅片表面进行加热,氧气体积浓度为10%-100%,控制温度为500-800℃,时间不超过30min,完成热氧化。
作为本发明实施方式的进一步改进,所述S2中磷扩散具体包括在去除绕镀后的P型单晶硅片表面通过POCl3液态扩散源热在正面进行磷扩散以形成发射极PN结。
作为本发明实施方式的进一步改进,所述方法还包括在所述磷扩散后,去除所述正面的磷硅玻璃。
作为本发明实施方式的进一步改进,所述步骤S6中AlOx层厚度为1-4nm。
作为本发明实施方式的进一步改进,在所述正面和背面形成金属电极的具体方式采用丝网印刷方法,印刷Ag或Ag/Al浆料,制作电极并进行烧结。
作为本发明实施方式的进一步改进,所述步骤S3中利用强酸或强碱溶液抛光所述背面的试剂为HF/HNO3等混酸溶液或NaOH、KOH等碱溶液溶液。
本发明具有以下有益效果:
本发明在现有技术中传统制备方法的基础上,在硅片表面进行SiNx镀膜工艺中大量的氢元素被引入到晶体硅电池片内,通过退火工艺使晶体硅电池内过量的氢元素逸出,调节晶体硅电池内的氢元素浓度,从而达到减少由过量氢元素引起的热辅助光致衰减的效果。
具体实施方式
为使本发明的目的、技术方案和优点更加清楚,下面将结合本发明实施例,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。
本发明的目的在于提供一种降低LETID的P型晶体硅太阳能电池的制备方法,所述方法包括以下步骤:
S1、对P型单晶硅片的正面制绒,在所述正面形成陷光绒面;
S2、在所述P型单晶硅片的正面进行磷扩散形成磷掺杂面,形成PN结作为选择性发射极;
S3、清洗所述P型单晶硅片的背面的氧化层,并利用强酸或强碱溶液抛光所述背面,所述背面为电池的非磷掺杂面;
S4、对所述P型单晶硅片的背面进行氧化,形成SiO2氧化层;
S6、所述P型单晶硅片采用背靠背的方式放置,在所述背面沉积AlOx层;
S7、在所述正面和背面沉积SiNx层;
S8、对所述P型单晶硅片进行退火工艺;
S9、在所述背面开槽;
S10、在所述正面和背面形成金属电极。
具体地,所述步骤S8中的退火工艺采用管式退火炉,退火温度500-800摄氏度,退火时间1-30分钟。
可选地,S1之前还包括去除硅片表面杂质及机械损伤。
在本发明实施例中,P型单晶硅片包括P型硅片、P型硅片经过硼重掺后的P+硅片以及N型硅片经过硼掺杂后的P型硅片。
具体地,S4中氧化方法具体包括采用浓硝酸氧化、臭氧氧化或热氧化进行氧化处理。
其中,氧化处理具体包括采用质量浓度为65%-75%的浓硝酸氧化硅片的表面,控制温度为20-120℃,反应时间不超过10min,完成浓硝酸氧化;采用浓度为10~500ppm的臭氧氧化硅片的表面,控制温度为20-100℃,反应时间不超过10min,完成臭氧氧化;在氧气或者氮氧混合气氛围中对硅片表面进行加热,氧气体积浓度为10%-100%,控制温度为500-800℃,时间不超过30min,完成热氧化。
其中,S2中磷扩散具体包括在去除绕镀后的P型单晶硅片表面通过POCl3液态扩散源热在正面进行磷扩散以形成发射极PN结。
在磷扩散操作之后,去除所述正面的磷硅玻璃。
其中,所述步骤S6中AlOx层厚度为1-4nm。
在本发明实施例中,在所述正面和背面形成金属电极的具体方式采用丝网印刷方法,印刷Ag或Ag/Al浆料,制作电极并进行烧结。
步骤S3中利用强酸或强碱溶液抛光所述背面的试剂为HF/HNO3等混酸溶液或NaOH、KOH等碱溶液溶液。
本发明具有以下有益效果:
本发明在现有技术中传统制备方法的基础上,在硅片表面进行SiNx镀膜工艺中大量的氢元素被引入到晶体硅电池片内,通过退火工艺使晶体硅电池内过量的氢元素逸出,调节晶体硅电池内的氢元素浓度,从而达到减少由过量氢元素引起的热辅助光致衰减的效果。
上述所有可选技术方案,可以采用任意结合形成本发明的可选实施例,在此不再一一赘述。
以上所述仅为本发明的较佳实施例,并不用以限制本发明,凡在本发明的精神和原则之内,所作的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。
Claims (6)
1.一种降低LETID的P型晶体硅太阳能电池的制备方法,其特征在于,所述方法包括以下步骤:
S1、对P型单晶硅片的正面制绒,在所述正面形成陷光绒面;
S2、在所述P型单晶硅片的正面进行磷扩散形成磷掺杂面,形成PN结作为选择性发射极;
S3、清洗所述P型单晶硅片的背面的氧化层,并利用强酸或强碱溶液抛光所述背面,所述背面为电池的非磷掺杂面;
S4、对所述P型单晶硅片的背面进行氧化,形成SiO2氧化层;
S6、所述P型单晶硅片采用背靠背的方式放置,在所述背面沉积AlOx层;
S7、在所述正面和背面沉积SiNx层;
S8、对所述P型单晶硅片进行退火工艺;
S9、在所述背面开槽;
S10、在所述正面和背面形成金属电极;其中,
步骤S8中的退火工艺采用管式退火炉,退火温度500-800摄氏度,退火时间1-30分钟;其中,
步骤S4中的氧化处理包括:采用质量浓度为65%-75%的浓硝酸氧化硅片的表面,控制温度为20-120℃,反应时间不超过10min,完成浓硝酸氧化;采用浓度为10~500ppm的臭氧氧化硅片的表面,控制温度为20-100℃,反应时间不超过10min,完成臭氧氧化;在氧气或者氮氧混合气氛围中对硅片表面进行加热,氧气体积浓度为10%-100%,控制温度为500-800℃,时间不超过30min,完成热氧化。
2.根据权利要求1所述的降低LETID的P型晶体硅太阳能电池的制备方法,其特征在于,步骤S1之前还包括去除硅片表面杂质及机械损伤。
3.根据权利要求1所述的降低LETID的P型晶体硅太阳能电池的制备方法,其特征在于,所述P型单晶硅片包括P型硅片、P型硅片经过硼重掺后的P+硅片以及N型硅片经过硼掺杂后的P型硅片。
4.根据权利要求1所述的降低LETID的P型晶体硅太阳能电池的制备方法,其特征在于,步骤S2中磷扩散包括在去除绕镀后的P型单晶硅片表面通过POCl3液态扩散源热在正面进行磷扩散以形成发射极PN结。
5.根据权利要求1所述的降低LETID的P型晶体硅太阳能电池的制备方法,其特征在于,所述方法还包括在所述磷扩散后,去除所述正面的磷硅玻璃。
6.根据权利要求1所述的降低LETID的P型晶体硅太阳能电池的制备方法,其特征在于,步骤S6中AlOx层厚度为1-4nm。
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