CN109087956A - 一种双面perc太阳能电池结构及其制备工艺 - Google Patents
一种双面perc太阳能电池结构及其制备工艺 Download PDFInfo
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Abstract
本发明提出一种新型的双面PERC电池结构及其制备工艺，所述电池的正面与背面钝化层结构对称，极大降低了双面电池的翘曲度，提升组件的机械载荷强度；叠层钝化结构在保证电池抗PID性能的基础上，采用了独特的表面钝化层沉积工艺，最佳化正面和背面光学(减反射效果)和电学(提升氢钝化效果)性能，实现电池正面转换效率、双面率和抗LID效果的改善与提升。本发明所采用的双面PERC电池工艺，正面和背面的SiO2和AlOx层分别通过热氧化和ALD同时形成，正面和背面的SiNx/SiNy/SiOxNy/SiOx叠层分别通过PECVD沉积形成，正面和背面的沉积次序可调整。
Description
技术领域
本发明涉及一种双面PERC太阳能电池结构及其制备工艺，属于晶体硅太阳能电池制造领域。
背景技术
在单面PERC电池的基础上，对背钝化、激光开窗和印刷及高温烧结工艺进行一定的调整，便可实现双面PERC电池的制备。为了提升电池背面的发电效果，需要降低背面钝化层厚度，同时背面采用Al栅线印刷，影响了电池的正面转换效率；双面电池的结构，也增大了电池和组件LID和PID的风险。
发明内容
本发明提出一种新型的双面PERC电池结构及其制备工艺，正面和背面采用了对称的钝化层结构，极大降低了双面电池的翘曲度，提升组件的机械载荷强度；叠层钝化结构在保证电池抗PID性能的基础上，采用了独特的表面钝化层沉积工艺，最佳化正面和背面光学(减反射效果)和电学(提升氢钝化效果)性能，实现电池正面转换效率、双面率和抗LID效果的改善与提升。
为了实现上述目的，本发明采用以下技术方案：
一种双面PERC太阳能电池结构，所述电池的正面与背面钝化层结构对称，采用SiO2/AlOx/SiNx/SiNy/SiOxNy/SiOx叠层结构，正面和背面SiO2层通过热氧化或者臭氧氧化同时形成，SiO2层厚度5-20nm；正面与背面AlOx层通过原子层沉积同时沉积形成，AlOx层厚度3-30nm，折射率1.60-1.65。
在本技术方案中，本发明所发展的双面PERC电池结构，双面均采用了SiO2/AlOx/SiNx/SiNy/SiOxNy/SiOx叠层结构，SiO2/AlOx叠层提升电池抗PID效果，SiNx/SiNy/SiOxNy/SiOx叠层提升电池减反射、钝化及抗LID效果。
作为优选，正面SiNx/SiNy/SiOxNy/SiOx叠层厚度分别为5-20nm、20-40nm、30-50nm和40-60nm，叠层总厚度80-90nm。
作为优选，背面SiNx/SiNy/SiOxNy/SiOx叠层厚度分别为15-30nm、30-60nm、40-70nm和60-90nm，叠层总厚度80-160nm。
作为优选，正面SiNx/SiNy/SiOxNy/SiOx叠层的折射率分别为2.0-2.3、1.8-2.0、1.6-1.9和1.4-1.6；背面SiNx/SiNy/SiOxNy/SiOx叠层的折射率分别为2.0-2.3、1.8-2.0、1.6-1.9和1.4-1.6。
一种双面PERC太阳能电池结构的制备工艺，所述制备工艺包括以下步骤：
1)、硅片在碱性或者酸性溶液中制绒后，清洗，烘干，绒面尺寸控制在5um以内；
2)、扩散炉中进行高温磷扩散，扩散温度750-850℃之间，压力50-200mbar，时间80-100min；
3)、背面链式刻蚀带速1.5-3.0m/min，刻蚀深度1-6um，背表面反射率15-40％；
4)、扩散炉中进行热氧化，双面同时生长氧化层，氧化温度600-900℃之间，压力100-500mbar，时间10-60min之间；
5)、ALD沉积，双面同时沉积Al2O3；
6)、正面镀膜：通过PECVD依次沉积SiNx、SiNy、SiOxNy和SiOx；
7)、背面镀膜：通过PECVD依次沉积SiNx、SiNy、SiOxNy和SiOx；
8)、激光开窗，制备背面局部接触图案；
9)、丝网印刷及高温烧结。
作为优选，步骤5)中，沉积温度150-300℃，压力50-200mTor，时间300-1500s。
作为优选，步骤6)正面镀膜时，沉积SiNx压力50-500Pa、温度400-500℃、功率5000-6500W，SiH4/NH3＝1/3至1/6、时间50-150s；沉积SiNy压力50-500Pa、温度400-500℃、功率6000-8000W，SiH4/NH3＝1/5至1/10、时间200-500s；沉积SiOxNy压力50-500Pa、温度400-500℃、功率5000-6500W，SiH4/NH3/N2O＝1/3/3至1/5/5、时间100-300s；沉积SiOx压力50-500Pa、温度400-500℃、功率3000-5000W，SiH4/N2O＝1/8至1/12、时间150-300s。
作为优选，步骤7)背面沉积时，沉积SiNx压力50-500Pa、温度400-500℃、功率5000-6500W，SiH4/NH3＝1/5至1/8、时间100-250s；沉积SiNy压力50-500Pa、温度400-500℃、功率6000-8000W，SiH4/NH3＝1/5至1/12、时间300-600s；沉积SiOxNy压力50-500Pa、温度400-500℃、功率5000-6500W，SiH4/NH3/N2O＝1/5/5至1/8/8、时间200-400s；沉积SiOx压力50-500Pa、温度400-500℃、功率3000-5000W，SiH4/N2O＝1/8至1/14、时间250-300s。
本发明的有益效果：本发明所发展的双面PERC电池结构，双面均采用了SiO2/AlOx/SiNx/SiNy/SiOxNy/SiOx叠层结构，SiO2/AlOx叠层提升电池抗PID效果，SiNx/SiNy/SiOxNy/SiOx叠层提升电池减反射、钝化及抗LID效果。
本发明所采用的双面PERC电池工艺，正面和背面的SiO2和AlOx层分别通过热氧化和ALD同时形成，正面和背面的SiNx/SiNy/SiOxNy/SiOx叠层分别通过PECVD沉积形成，正面和背面的沉积次序可调整。
附图说明
图1是本发明双面PERC电池结构示意图。
具体实施方式
以下结合具体实施例与附图，对本发明做进一步的解释：
实施例1
参照图1，一种双面PERC太阳能电池结构，电池正面和背面均采用SiO2/AlOx/SiNx/SiNy/SiOxNy/SiOx叠层结构，其中，正面和背面SiO2层通过热氧化或者臭氧氧化同时形成，SiO2层厚度5-20nm；正面与背面AlOx(Al2O3)层通过原子层沉积(ALD)同时沉积形成，AlOx层厚度3-30nm，折射率1.60-1.65；正面和背面SiNx/SiNy/SiOxNy/SiOx叠层(采用SiNx、SiNy、SiOxNy和SiOx当中的两种或者两种以上的组合)分别通过PECVD沉积形成，正面SiNx/SiNy/SiOxNy/SiOx叠层厚度分别为5-20nm、20-40nm、30-50nm和40-60nm，叠层总厚度80-90nm，折射率分别为2.0-2.3、1.8-2.0、1.6-1.9和1.4-1.6；背面SiNx/SiNy/SiOxNy/SiOx叠层厚度分别为15-30nm、30-60nm、40-70nm和60-90nm，叠层总厚度80-160nm，折射率分别为2.0-2.3、1.8-2.0、1.6-1.9和1.4-1.6。
一种双面PERC太阳能电池结构的制备工艺，所述制备工艺包括以下步骤：
1)、硅片在碱性或者酸性溶液中制绒后，清洗，烘干，绒面尺寸控制在5um以内；
2)、扩散炉中进行高温磷扩散，扩散温度800℃，压力100mbar，时间90min；
3)、背面链式刻蚀带速2.0m/min，刻蚀深度2um，背表面反射率20％；
4)、扩散炉中进行热氧化，双面同时生长氧化层，氧化温度750℃，压力300mbar，时间25min；
5)、ALD沉积，双面同时沉积Al2O3，沉积温度200℃，压力100mTor，时间500s；
6)、正面镀膜：通过PECVD依次沉积SiNx、SiNy、SiOxNy和SiOx，其中沉积SiNx压力200Pa、温度500℃、功率6000W，SiH4/NH3＝1/5、时间100s；沉积SiNy压力200Pa、温度500℃、功率7000W，SiH4/NH3＝1/10、时间400s；沉积SiOxNy压力200Pa、温度500℃、功率5000W，SiH4/NH3/N2O＝1/5/5、时间200s；沉积SiOx压力150Pa、温度500℃、功率4000W，SiH4/N2O＝12、时间250s；
7)、背面镀膜：通过PECVD依次沉积SiNx、SiNy、SiOxNy和SiOx，其中沉积SiNx压力200Pa、温度450℃、功率6000W，SiH4/NH3＝1/5、时间200s；沉积SiNy压力200Pa、温度450℃、功率7000W，SiH4/NH3＝1/10、时间400s；沉积SiOxNy压力200Pa、温度450℃、功率5000W，SiH4/NH3/N2O＝1/5/5、时间200s；沉积SiOx压力200Pa、温度450℃、功率4000W，SiH4/N2O＝1/12、时间250s；
8)、激光开窗，制备背面局部接触图案；
9)、丝网印刷及高温烧结。
实施例2：
实施例1中第3步，背面链式刻蚀带速1.5m/min，刻蚀深度5um，背表面反射率40％；其它工艺与实施例1相同。
实施例3：
实施例1中第5步，ALD沉积，双面同时沉积Al2O3，沉积温度250℃，压力100mTor，时间400s；其它工艺与实施例1相同。
实施例4：
实施例1中先进行背面镀膜再进行正面镀膜，即先进行第7步工艺后再进行第6步工艺。
实施例5：
实施例1中第6步，通过PECVD依次沉积SiNx、SiNy、SiOxNy和SiOx，其中沉积SiNx压力200Pa、温度500℃、功率6000W，SiH4/NH3＝1/3、时间100s；沉积SiNy压力200Pa、温度500℃、功率7000W，SiH4/NH3＝1/8、时间350s；沉积SiOxNy压力200Pa、温度500℃、功率5000W，SiH4/NH3/N2O＝1/3/3、时间200s；沉积SiOx压力150Pa、温度500℃、功率4000W，SiH4/N2O＝10、时间250s；其它工艺与实施例1相同。
实施例6：
实施例1中第7步，通过PECVD依次沉积SiNx、SiNy、SiOxNy和SiOx，其中沉积SiNx压力200Pa、温度450℃、功率6000W，SiH4/NH3＝1/7、时间150s；沉积SiNy压力200Pa、温度450℃、功率7000W，SiH4/NH3＝1/12、时间400s；沉积SiOxNy压力200Pa、温度450℃、功率5000W，SiH4/NH3/N2O＝1/8/8、时间250s；沉积SiOx压力200Pa、温度450℃、功率4000W，SiH4/N2O＝1/14、时间280s；其它工艺与实施例1相同。
实施例具体测试结果如表1所示，其中Voc为电池开路电压，Isc为电池短路电流，FF为电池填充因子，Eff为电池正面转换效率，双面率为电池背面效率与正面效率之比。
表1实施例电性能
Claims (8)
1.一种双面PERC太阳能电池结构，其特征在于，所述电池的正面与背面钝化层结构对称，采用SiO2/AlOx/SiNx/SiNy/SiOxNy/SiOx叠层结构，正面和背面SiO2层通过热氧化或者臭氧氧化同时形成，SiO2层厚度5-20nm；正面与背面A1Ox层通过原子层沉积同时沉积形成，AlOx层厚度3-30nm，折射率1.60-1.65。
2.根据权利要求1所述的一种双面PERC太阳能电池结构，其特征在于，正面SiNx/SiNy/SiOxNy/SiOx叠层厚度分别为5-20nm、20-40nm、30-50nm和40-60nm，叠层总厚度80-90nm。
3.根据权利要求1所述的一种双面PERC太阳能电池结构，其特征在于，背面SiNx/SiNy/SiOxNy/SiOx叠层厚度分别为15-30nm、30-60nm、40-70nm和60-90nm，叠层总厚度80-160nm。
4.根据权利要求1所述的一种双面PERC太阳能电池结构，其特征在于，正面SiNx/SiNy/SiOxNy/SiOx叠层的折射率分别为2.0-2.3、1.8-2.0、1.6-1.9和1.4-1.6；背面SiNx/SiNy/SiOxNy/SiOx叠层的折射率分别为2.0-2.3、1.8-2.0、1.6-1.9和1.4-1.6。
5.一种如权利要求1所述的双面PERC太阳能电池结构的制备工艺，其特征在于，所述制备工艺包括以下步骤：
1)、硅片在碱性或者酸性溶液中制绒后，清洗，烘干，绒面尺寸控制在5um以内；
2)、扩散炉中进行高温磷扩散，扩散温度750-850℃之间，压力50-200mbar，时间80-100min；
3)、背面链式刻蚀带速1.5-3.0m/min，刻蚀深度1-6um，背表面反射率15-40％；
4)、扩散炉中进行热氧化，双面同时生长氧化层，氧化温度600-900℃之间，压力100-500mbar，时间10-60min之间；
5)、ALD沉积，双面同时沉积Al2O3；
6)、正面镀膜：通过PECVD依次沉积SiNx、SiNy、SiOxNy和SiOx；
7)、背面镀膜：通过PECVD依次沉积SiNx、SiNy、SiOxNy和SiOx；
8)、激光开窗，制备背面局部接触图案；
9)、丝网印刷及高温烧结。
6.根据权利要求5所述的一种双面PERC太阳能电池结构的制备工艺，其特征在于，步骤5)中，沉积温度150-300℃，压力50-200mTor，时间300-1500s。
7.根据权利要求5所述的一种双面PERC太阳能电池结构的制备工艺，其特征在于，步骤6)正面镀膜时，沉积SiNx压力50-500Pa、温度400-500℃、功率5000-6500W，SiH4/NH3＝1/3至1/6、时间50-150s；沉积SiNy压力50-500Pa、温度400-500℃、功率6000-8000W，SiH4/NH3＝1/5至1/10、时间200-500s；沉积SiOxNy压力50-500Pa、温度400-500℃、功率5000-6500W，SiH4/NH3/N2O＝1/3/3至1/5/5、时间100-300s；沉积SiOx压力50-500Pa、温度400-500℃、功率3000-5000W，SiH4/N2O＝1/8至1/12、时间150-300s。
8.根据权利要求5所述的一种双面PERC太阳能电池结构的制备工艺，其特征在于，步骤7)背面沉积时，沉积SiNx压力50-500Pa、温度400-500℃、功率5000-6500W，SiH4/NH3＝1/5至1/8、时间100-250s；沉积SiNy压力50-500Pa、温度400-500℃、功率6000-8000W，SiH4/NH3＝1/5至1/12、时间300-600s；沉积SiOxNy压力50-500Pa、温度400-500℃、功率5000-6500W，SiH4/NH3/N2O＝1/5/5至1/8/8、时间200-400s；沉积SiOx压力50-500Pa、温度400-500℃、功率3000-5000W，SiH4/N2O＝1/8至1/14、时间250-300s。
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009295913A (ja) * | 2008-06-09 | 2009-12-17 | Sharp Corp | 太陽電池およびその製造方法 |
| US20110114171A1 (en) * | 2010-01-08 | 2011-05-19 | Suniva, Inc. | Solar cell including sputtered reflective layer |
| CN102569497A (zh) * | 2010-12-30 | 2012-07-11 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 在基板上形成减反射膜的方法、太阳能电池片及制备方法 |
| CN202601629U (zh) * | 2012-05-25 | 2012-12-12 | 中节能太阳能科技有限公司 | 晶体硅太阳能电池 |
| US20130160839A1 (en) * | 2011-12-21 | 2013-06-27 | Juhwa CHEONG | Solar cell |
| CN105870249A (zh) * | 2016-03-24 | 2016-08-17 | 江苏微导纳米装备科技有限公司 | 一种晶硅太阳能电池的制造工艺 |
| CN108231917A (zh) * | 2017-12-20 | 2018-06-29 | 横店集团东磁股份有限公司 | 一种perc太阳能电池及其制备方法 |
-
2018
- 2018-07-16 CN CN201810780446.9A patent/CN109087956B/zh active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009295913A (ja) * | 2008-06-09 | 2009-12-17 | Sharp Corp | 太陽電池およびその製造方法 |
| US20110114171A1 (en) * | 2010-01-08 | 2011-05-19 | Suniva, Inc. | Solar cell including sputtered reflective layer |
| CN102569497A (zh) * | 2010-12-30 | 2012-07-11 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 在基板上形成减反射膜的方法、太阳能电池片及制备方法 |
| US20130160839A1 (en) * | 2011-12-21 | 2013-06-27 | Juhwa CHEONG | Solar cell |
| CN202601629U (zh) * | 2012-05-25 | 2012-12-12 | 中节能太阳能科技有限公司 | 晶体硅太阳能电池 |
| CN105870249A (zh) * | 2016-03-24 | 2016-08-17 | 江苏微导纳米装备科技有限公司 | 一种晶硅太阳能电池的制造工艺 |
| CN108231917A (zh) * | 2017-12-20 | 2018-06-29 | 横店集团东磁股份有限公司 | 一种perc太阳能电池及其制备方法 |
Cited By (27)
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|---|---|---|---|---|
| CN109509796A (zh) * | 2018-12-26 | 2019-03-22 | 苏州腾晖光伏技术有限公司 | 一种用于p型单晶perc电池的背面钝化膜及背面镀膜工艺 |
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| CN110112243A (zh) * | 2019-06-02 | 2019-08-09 | 苏州腾晖光伏技术有限公司 | 太阳能电池的背面钝化结构及其制备方法 |
| WO2021036798A1 (zh) * | 2019-08-29 | 2021-03-04 | 通威太阳能（成都）有限公司 | 一种pid抗性高的perc电池组件及其制备方法 |
| WO2021068644A1 (zh) * | 2019-10-12 | 2021-04-15 | 通威太阳能（成都）有限公司 | 一种高效背钝化晶硅太阳能电池及其制备方法 |
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| CN111106184A (zh) * | 2019-12-30 | 2020-05-05 | 东方日升（常州）新能源有限公司 | 提高双面perc电池背面效率的背面膜结构及其镀膜方法 |
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| CN112563370A (zh) * | 2020-12-04 | 2021-03-26 | 通威太阳能（安徽）有限公司 | 单晶perc晶硅电池背钝化制备工艺及perc太阳能电池 |
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