CN107863415A - 一种热氧化结合pecvd提升太阳能电池片转化效率的方法 - Google Patents
一种热氧化结合pecvd提升太阳能电池片转化效率的方法 Download PDFInfo
- Publication number
- CN107863415A CN107863415A CN201710937776.XA CN201710937776A CN107863415A CN 107863415 A CN107863415 A CN 107863415A CN 201710937776 A CN201710937776 A CN 201710937776A CN 107863415 A CN107863415 A CN 107863415A
- Authority
- CN
- China
- Prior art keywords
- pecvd
- thermal oxide
- flow
- transformation efficiency
- solar battery
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 title claims abstract description 37
- 238000000034 method Methods 0.000 title claims abstract description 34
- 230000009466 transformation Effects 0.000 title claims abstract description 23
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 32
- 230000003647 oxidation Effects 0.000 claims abstract description 30
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 25
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 23
- 239000010703 silicon Substances 0.000 claims abstract description 22
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 16
- 210000002268 wool Anatomy 0.000 claims abstract description 11
- 238000012544 monitoring process Methods 0.000 claims abstract description 8
- 238000001039 wet etching Methods 0.000 claims abstract description 8
- 229910020776 SixNy Inorganic materials 0.000 claims abstract description 7
- 229910020782 SixNyO Inorganic materials 0.000 claims abstract description 6
- 239000002253 acid Substances 0.000 claims abstract description 6
- 235000008216 herbs Nutrition 0.000 claims abstract description 6
- 238000007650 screen-printing Methods 0.000 claims abstract description 6
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 6
- 238000005245 sintering Methods 0.000 claims abstract description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 3
- 238000004140 cleaning Methods 0.000 claims abstract description 3
- 238000009792 diffusion process Methods 0.000 claims abstract description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 3
- 239000011574 phosphorus Substances 0.000 claims abstract description 3
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims description 26
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 22
- 229910052757 nitrogen Inorganic materials 0.000 claims description 11
- 238000002310 reflectometry Methods 0.000 claims description 10
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 9
- 229910000077 silane Inorganic materials 0.000 claims description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 claims description 5
- 238000009413 insulation Methods 0.000 claims description 5
- 238000010792 warming Methods 0.000 claims description 4
- 235000013842 nitrous oxide Nutrition 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 abstract description 10
- 238000000576 coating method Methods 0.000 abstract description 7
- 238000000151 deposition Methods 0.000 abstract 1
- 230000008569 process Effects 0.000 description 11
- 229910052681 coesite Inorganic materials 0.000 description 10
- 229910052906 cristobalite Inorganic materials 0.000 description 10
- 229910052682 stishovite Inorganic materials 0.000 description 10
- 229910052905 tridymite Inorganic materials 0.000 description 10
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 8
- 238000002161 passivation Methods 0.000 description 8
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 239000006117 anti-reflective coating Substances 0.000 description 3
- 230000009849 deactivation Effects 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- XZWYZXLIPXDOLR-UHFFFAOYSA-N metformin Chemical compound CN(C)C(=N)NC(N)=N XZWYZXLIPXDOLR-UHFFFAOYSA-N 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- MEYZYGMYMLNUHJ-UHFFFAOYSA-N tunicamycin Natural products CC(C)CCCCCCCCCC=CC(=O)NC1C(O)C(O)C(CC(O)C2OC(C(O)C2O)N3C=CC(=O)NC3=O)OC1OC4OC(CO)C(O)C(O)C4NC(=O)C MEYZYGMYMLNUHJ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/0214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
- H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
- Formation Of Insulating Films (AREA)
Abstract
Description
常规工艺膜厚/nm | 72.5 | 72.1 | 73.8 | 75.5 | 71.2 | 74.3 |
常规工艺折射率 | 2.071 | 2.075 | 2.062 | 2.052 | 2.054 | 2.052 |
实施例1膜厚/nm | 80.1 | 79.6 | 77.5 | 78.3 | 78.8 | 79.5 |
实施例1折射率 | 2.021 | 2.022 | 2.023 | 2.025 | 2.025 | 2.023 |
Claims (7)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710937776.XA CN107863415B (zh) | 2017-10-10 | 2017-10-10 | 一种热氧化结合pecvd提升太阳能电池片转化效率的方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710937776.XA CN107863415B (zh) | 2017-10-10 | 2017-10-10 | 一种热氧化结合pecvd提升太阳能电池片转化效率的方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN107863415A true CN107863415A (zh) | 2018-03-30 |
CN107863415B CN107863415B (zh) | 2019-03-19 |
Family
ID=61698411
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201710937776.XA Active CN107863415B (zh) | 2017-10-10 | 2017-10-10 | 一种热氧化结合pecvd提升太阳能电池片转化效率的方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN107863415B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112133788A (zh) * | 2020-09-21 | 2020-12-25 | 横店集团东磁股份有限公司 | 一种提高perc电池开压的热氧化工艺方法及得到的perc电池片 |
CN115101622A (zh) * | 2022-06-02 | 2022-09-23 | 浙江晶科能源有限公司 | 一种太阳能电池及其制作方法、光伏组件 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050245100A1 (en) * | 2004-04-30 | 2005-11-03 | Taiwan Semiconductor Manufacturing Co. | Reliability improvement of SiOC etch with trimethylsilane gas passivation in Cu damascene interconnects |
CN101882650A (zh) * | 2010-06-29 | 2010-11-10 | 常州大学 | 带有电荷埋层的太阳电池的制备方法 |
CN103413841A (zh) * | 2013-08-28 | 2013-11-27 | 中电投西安太阳能电力有限公司 | 太阳能电池表面钝化层结构及其制备方法 |
CN103996720A (zh) * | 2014-05-20 | 2014-08-20 | 奥特斯维能源(太仓)有限公司 | 一种晶硅电池表面钝化膜及其制备方法 |
CN105140306A (zh) * | 2015-07-27 | 2015-12-09 | 尚德太阳能电力有限公司 | 抗pid效应的太阳能电池结构及生产方法 |
CN105470341A (zh) * | 2014-09-05 | 2016-04-06 | 中国科学院苏州纳米技术与纳米仿生研究所 | 一种廉价无序宽谱广角减反结构及其制作方法 |
-
2017
- 2017-10-10 CN CN201710937776.XA patent/CN107863415B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050245100A1 (en) * | 2004-04-30 | 2005-11-03 | Taiwan Semiconductor Manufacturing Co. | Reliability improvement of SiOC etch with trimethylsilane gas passivation in Cu damascene interconnects |
CN101882650A (zh) * | 2010-06-29 | 2010-11-10 | 常州大学 | 带有电荷埋层的太阳电池的制备方法 |
CN103413841A (zh) * | 2013-08-28 | 2013-11-27 | 中电投西安太阳能电力有限公司 | 太阳能电池表面钝化层结构及其制备方法 |
CN103996720A (zh) * | 2014-05-20 | 2014-08-20 | 奥特斯维能源(太仓)有限公司 | 一种晶硅电池表面钝化膜及其制备方法 |
CN105470341A (zh) * | 2014-09-05 | 2016-04-06 | 中国科学院苏州纳米技术与纳米仿生研究所 | 一种廉价无序宽谱广角减反结构及其制作方法 |
CN105140306A (zh) * | 2015-07-27 | 2015-12-09 | 尚德太阳能电力有限公司 | 抗pid效应的太阳能电池结构及生产方法 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112133788A (zh) * | 2020-09-21 | 2020-12-25 | 横店集团东磁股份有限公司 | 一种提高perc电池开压的热氧化工艺方法及得到的perc电池片 |
CN112133788B (zh) * | 2020-09-21 | 2022-12-16 | 横店集团东磁股份有限公司 | 一种提高perc电池开压的热氧化工艺方法及得到的perc电池片 |
CN115101622A (zh) * | 2022-06-02 | 2022-09-23 | 浙江晶科能源有限公司 | 一种太阳能电池及其制作方法、光伏组件 |
CN115101622B (zh) * | 2022-06-02 | 2024-02-06 | 浙江晶科能源有限公司 | 一种太阳能电池及其制作方法、光伏组件 |
Also Published As
Publication number | Publication date |
---|---|
CN107863415B (zh) | 2019-03-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN112349816B (zh) | 一种基于PECVD技术的高效低成本N型TOPCon电池的制备方法 | |
CN109087956B (zh) | 一种双面perc太阳能电池结构及其制备工艺 | |
WO2021068644A1 (zh) | 一种高效背钝化晶硅太阳能电池及其制备方法 | |
WO2021031500A1 (zh) | 一种复合介电钝化层结构太阳电池及其制备工艺 | |
WO2018209729A1 (zh) | 管式perc双面太阳能电池及其制备方法和专用设备 | |
CN105226112B (zh) | 一种高效晶硅太阳能电池的制备方法 | |
CN106992229A (zh) | 一种perc电池背面钝化工艺 | |
CN109004038B (zh) | 太阳能电池及其制备方法和光伏组件 | |
CN105355723B (zh) | 晶体硅太阳电池二氧化硅钝化膜的制备方法 | |
CN109192813A (zh) | Perc电池背面钝化工艺 | |
CN105185851A (zh) | 一种背面钝化太阳能电池及其制备方法 | |
CN102339871B (zh) | 适用于rie绒面的三明治结构正面介质膜及其制备方法 | |
WO2024021895A1 (zh) | 太阳能电池及制备方法、光伏组件 | |
CN105355707A (zh) | 一种高效晶硅太阳能电池及其制备方法 | |
CN104952941A (zh) | 一种多层异质减反射膜太阳能电池 | |
CN107731935A (zh) | 一种背钝化晶硅太阳能电池及其背钝化膜层的制备方法 | |
CN115332366A (zh) | 一种背钝化接触异质结太阳电池及其制备方法 | |
CN111952153A (zh) | 隧穿氧化层的制备方法、太阳能电池及其制备方法 | |
CN114597267B (zh) | 一种TOPCon电池及其制备方法 | |
CN112825340B (zh) | 一种钝化接触电池及其制备方法和应用 | |
CN104851923A (zh) | 一种提升晶体硅太阳能电池效率减反射膜制备方法 | |
CN107863415A (zh) | 一种热氧化结合pecvd提升太阳能电池片转化效率的方法 | |
CN114583016A (zh) | 一种TOPCon电池及其制备方法 | |
CN104659150A (zh) | 一种晶体硅太阳电池多层减反射膜的制备方法 | |
CN105161547A (zh) | 一种用于背钝化太阳电池的叠层膜及其制备方法以及一种背钝化太阳电池 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: A method for improving the conversion efficiency of solar cells by thermal oxidation combined with PECVD Effective date of registration: 20210804 Granted publication date: 20190319 Pledgee: Dongyang Branch of China Construction Bank Co.,Ltd. Pledgor: HENGDIAN GROUP DMEGC MAGNETICS Co.,Ltd. Registration number: Y2021330001068 |
|
PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20230628 Granted publication date: 20190319 Pledgee: Dongyang Branch of China Construction Bank Co.,Ltd. Pledgor: HENGDIAN GROUP DMEGC MAGNETICS Co.,Ltd. Registration number: Y2021330001068 |