CN107749429B - 一种提升PERC电池背钝化性能的AlOx沉积工艺 - Google Patents
一种提升PERC电池背钝化性能的AlOx沉积工艺 Download PDFInfo
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- CN107749429B CN107749429B CN201710946333.7A CN201710946333A CN107749429B CN 107749429 B CN107749429 B CN 107749429B CN 201710946333 A CN201710946333 A CN 201710946333A CN 107749429 B CN107749429 B CN 107749429B
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- 238000000151 deposition Methods 0.000 title claims abstract description 71
- 229910017107 AlOx Inorganic materials 0.000 title claims abstract description 36
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 title claims abstract description 23
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 title claims abstract description 23
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 title claims abstract description 23
- 230000000415 inactivating effect Effects 0.000 title claims abstract description 13
- 230000001737 promoting effect Effects 0.000 title claims description 6
- 239000010408 film Substances 0.000 claims abstract description 36
- 238000000034 method Methods 0.000 claims abstract description 27
- 230000008021 deposition Effects 0.000 claims abstract description 26
- 229910004205 SiNX Inorganic materials 0.000 claims abstract description 15
- 239000010409 thin film Substances 0.000 claims abstract description 15
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000001301 oxygen Substances 0.000 claims abstract description 11
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 11
- 239000011253 protective coating Substances 0.000 claims abstract description 7
- 238000000137 annealing Methods 0.000 claims abstract description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 36
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims description 34
- 239000007789 gas Substances 0.000 claims description 32
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 20
- 229910052786 argon Inorganic materials 0.000 claims description 18
- 235000013842 nitrous oxide Nutrition 0.000 claims description 17
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 16
- 230000005540 biological transmission Effects 0.000 claims description 13
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- 229910021529 ammonia Inorganic materials 0.000 claims description 10
- 229910000077 silane Inorganic materials 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 229910052757 nitrogen Inorganic materials 0.000 claims description 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- 235000015220 hamburgers Nutrition 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- 238000010926 purge Methods 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 230000006798 recombination Effects 0.000 abstract description 4
- 238000005215 recombination Methods 0.000 abstract description 4
- 238000002161 passivation Methods 0.000 abstract description 3
- 230000000694 effects Effects 0.000 abstract description 2
- 239000000758 substrate Substances 0.000 description 5
- 238000000427 thin-film deposition Methods 0.000 description 3
- 239000008246 gaseous mixture Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/049—Protective back sheets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
Abstract
Description
Claims (1)
Priority Applications (1)
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CN201710946333.7A CN107749429B (zh) | 2017-10-12 | 2017-10-12 | 一种提升PERC电池背钝化性能的AlOx沉积工艺 |
Applications Claiming Priority (1)
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CN201710946333.7A CN107749429B (zh) | 2017-10-12 | 2017-10-12 | 一种提升PERC电池背钝化性能的AlOx沉积工艺 |
Publications (2)
Publication Number | Publication Date |
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CN107749429A CN107749429A (zh) | 2018-03-02 |
CN107749429B true CN107749429B (zh) | 2019-07-16 |
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CN201710946333.7A Active CN107749429B (zh) | 2017-10-12 | 2017-10-12 | 一种提升PERC电池背钝化性能的AlOx沉积工艺 |
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Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN111384208A (zh) * | 2019-11-19 | 2020-07-07 | 横店集团东磁股份有限公司 | 一种降低太阳能单晶perc电池cid的工艺及太阳能单晶perc电池 |
CN113322451B (zh) * | 2021-05-28 | 2022-07-12 | 横店集团东磁股份有限公司 | 一种perc电池的氧化铝钝化膜及其沉积方法和应用 |
CN115036376A (zh) * | 2022-05-23 | 2022-09-09 | 平煤隆基新能源科技有限公司 | 一种提升perc太阳电池光电转换率的背钝化工艺 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102347391A (zh) * | 2010-07-28 | 2012-02-08 | 周星工程股份有限公司 | 晶圆型太阳能电池及其制造方法 |
CN103603053A (zh) * | 2013-11-15 | 2014-02-26 | 中电电气(南京)光伏有限公司 | 一种制备晶体硅太阳能电池的方法 |
CN105914256A (zh) * | 2016-04-19 | 2016-08-31 | 晋能清洁能源科技有限公司 | Perc晶体硅太阳能电池的制造方法 |
CN106057975A (zh) * | 2016-07-19 | 2016-10-26 | 苏州阿特斯阳光电力科技有限公司 | 一种perc太阳能电池的制备方法 |
CN106169510A (zh) * | 2016-09-29 | 2016-11-30 | 无锡尚德太阳能电力有限公司 | 太阳能电池背钝化膜层结构和制备方法 |
CN106486568A (zh) * | 2016-12-08 | 2017-03-08 | 湖南红太阳光电科技有限公司 | 一种perc电池的退火处理工艺 |
-
2017
- 2017-10-12 CN CN201710946333.7A patent/CN107749429B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102347391A (zh) * | 2010-07-28 | 2012-02-08 | 周星工程股份有限公司 | 晶圆型太阳能电池及其制造方法 |
CN103603053A (zh) * | 2013-11-15 | 2014-02-26 | 中电电气(南京)光伏有限公司 | 一种制备晶体硅太阳能电池的方法 |
CN105914256A (zh) * | 2016-04-19 | 2016-08-31 | 晋能清洁能源科技有限公司 | Perc晶体硅太阳能电池的制造方法 |
CN106057975A (zh) * | 2016-07-19 | 2016-10-26 | 苏州阿特斯阳光电力科技有限公司 | 一种perc太阳能电池的制备方法 |
CN106169510A (zh) * | 2016-09-29 | 2016-11-30 | 无锡尚德太阳能电力有限公司 | 太阳能电池背钝化膜层结构和制备方法 |
CN106486568A (zh) * | 2016-12-08 | 2017-03-08 | 湖南红太阳光电科技有限公司 | 一种perc电池的退火处理工艺 |
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Effective date of registration: 20200226 Address after: 334000 No.8 Xingye Avenue, Shangrao economic and Technological Development Zone, Shangrao City, Jiangxi Province Patentee after: Jiangxi Zhanyu Xinneng Technology Co., Ltd Address before: No. 8, Xingye Avenue, economic and Technological Development Zone, Shangrao, Jiangxi Province Patentee before: JIANGXI ZHANYU NEW ENERGY CO., LTD. |
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Address after: No.8 Xingye Avenue, Shangrao economic and Technological Development Zone, Jiangxi Province Patentee after: Shangrao Jietai New Energy Technology Co., Ltd Address before: No.8 Xingye Avenue, Shangrao economic and Technological Development Zone, Shangrao City, Jiangxi Province Patentee before: Jiangxi Zhanyu Xinneng Technology Co.,Ltd. |