CN102864439B - 一种制备具有抗pid效应的减反射膜的方法 - Google Patents
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Abstract
本发明公开一种制备具有抗PID效应的减反射膜的方法,包括:对炉管抽真空,保持炉内温度420℃,压力80mTorr,时间为4分钟;对硅片进行预处理,温度420℃,一氧化二氮流量为3.8~5.2slm,压力为1700mTorr,预处理3分钟;压力测试,保证设备内部压力50mTorr恒定,保持0.2~0.5分钟;预沉积,温度为420℃,氨气流量为0.1~0.9slm,硅烷流量为180~200sccm,一氧化二氮流量为3.5~5.1slm,压力为1000mTorr,射频功率4300瓦,持续时间0.3~0.5分钟;沉积,温度为450℃,氨气流量为2000~2200sccm,硅烷流量为7000~8500sccm,一氧化二氮流量为2~3.4slm,压力为1700mTorr,射频功率4300瓦,持续时间3~5分钟;氮气吹扫冷却,温度为420℃,氮气流量为6~12slm,压力为10000mTorr,吹扫时间5~8分钟。本发明制备的减反射膜具有抗PID效应,因此,光伏组件的抗衰减能力大幅提高。
Description
技术领域
本发明涉及太阳能电池的生产加工技术领域,更具体地说,是一种制备具有抗PID效应的减反射膜的方法。
背景技术
太阳能电池片是一种能量转换的光电元件,它可以在太阳光的照射下,把光能转换为电能,实现光伏发电。在太阳能硅片的表层沉积一层减反射膜,以降低硅片表面对光的发射,从而有效改善电池的光电转化效率,同时,减反射膜还能对太阳能电池起到表面钝化和体钝化的作用,因此,在选择减反射膜材料时应综合考虑这两方面的问题,适于作晶体硅太阳电池光学减反射膜的材料有氮化硅、氮氧化硅等薄膜材料。
目前,主要采用PEVCD生长减反射膜。PEVCD技术原理是利用低温等离子体作为能量源,利用高频电源及低压条件产生辉光放电,并使样品升温到预定的温度,然后通入适量的反应气体,气体经过辉光发电作用后受激发产生等离子,依靠电场作用在样品表面形成固态薄膜。目前的太阳能电池生产中,一般以氨气和硅烷作为反应气体,反应之后形成深蓝色的薄膜,其中的氮化硅起减反射作用,而氢可以起到体钝化的作用。PEVCD法镀膜对温度、真空度均有较高要求,由于是几种不同气体参加等离子反应,反应生成物复杂,并且由于反应气体常为有毒、易燃易爆气体,存在安全隐患。
电站实际运行中产生PID效应,PID效应是一种高强度负电压诱发的组件性能降低现象,严重时甚至可引起组件功率衰减50%以上,从而导致整个电站的功率输出下降,继而严重损害投资者的利益。
发明内容
本发明为了克服现有技术存在的问题,提供一种制备具有抗PID效应的减反射膜的方法。
本发明的目的可以通过以下技术方案实现:
一种制备具有抗PID效应的减反射膜的方法,其特征在于包括下面的步骤:
(1)对炉管抽真空,保持炉内温度420℃,压力80mTorr,时间为4分钟;
(2)对硅片进行预处理,温度420℃,一氧化二氮流量为3.8~5.2slm,压力为1700mTorr,预处理3分钟;
(3)压力测试,保证设备内部压力50mTorr恒定,保持0.2~0.5分钟;
(4)预沉积,温度为420℃,氨气流量为0.1~0.9slm,硅烷流量为180~200sccm,一氧化二氮流量为3.5~5.1slm,压力为1000mTorr,射频功率4300瓦,持续时间0.3~0.5分钟;
(5)沉积,温度为450℃,氨气流量为2000~2200sccm,硅烷流量为7000~8500sccm,一氧化二氮流量为2~3.4slm,压力为1700mTorr,射频功率4300瓦,持续时间3~5分钟;
(6)氮气吹扫冷却,温度为420℃,氮气流量为6~12slm,压力为10000mTorr,吹扫时间5~8分钟。
步骤(2)中一氧化二氮流量为4.4slm。
步骤(4)中氨气为0.5slm,硅烷为200sccm,一氧化二氮4.1slm。
步骤(5)中氨气流量为2100sccm,硅烷流量为7500sccm,一氧化二氮流量为2.4slm。
步骤(6)中氮气流量10slm,吹扫时间5分钟。
本发明的有益效果:本发明采用氨气、硅烷和一氧化二氮三种气体为反应气体,沉积在硅片上形成氮氧化硅减反射膜层,氮氧化硅膜层对硅片具有良好的钝化的性能及较高的折射率,有效阻碍硅基体与组件封装材料的电荷移动,该减反射膜具有抗PID效应。
具体实施方式
下面结合具体实施例对本发明作进一步详细的说明。
实施例1
本发明提供一种制备具有抗PID效应的减反射膜的方法,其特征在于包括下面的步骤:
(1)对炉管抽真空,保持炉内温度420℃,压力80mTorr,时间为4分钟;
(2)对硅片进行预处理,温度420℃,一氧化二氮流量为4.4 slm,压力为1700 mTorr,预处理3分钟;
(3)压力测试,保证设备内部压力50mTorr恒定,保持0.2~0.5分钟;
(4)预沉积,温度为420℃,氨气流量为0.5slm,硅烷流量为200sccm,一氧化二氮流量为4.1slm,压力为1000mTorr,射频功率4300瓦,持续时间0.3~0.5分钟;
(5)沉积,温度为450℃,氨气流量为2000sccm,硅烷流量为7500sccm,一氧化二氮流量为2slm,压力为1700mTorr,射频功率4300瓦,持续时间3~5分钟;
(6)氮气吹扫冷却,温度为420℃,氮气流量为10slm,压力为10000mTorr,吹扫时间5~8分钟。
实施例2
本发明提供一种制备具有抗PID效应的减反射膜的方法,其特征在于包括下面的步骤:
(1)对炉管抽真空,保持炉内温度420℃,压力80mTorr,时间为4分钟;
(2)对硅片进行预处理,温度420℃,一氧化二氮流量为3.8 slm,压力为1700 mTorr,预处理3分钟;
(3)压力测试,保证设备内部压力50mTorr恒定,保持0.2~0.5分钟;
(4)预沉积,温度为420℃,氨气流量为0.1slm,硅烷流量为180 sccm,一氧化二氮流量为3.5slm,压力为1000mTorr,射频功率4300瓦,持续时间0.3~0.5分钟;
(5)沉积,温度为450℃,氨气流量为2200sccm,硅烷流量为7200sccm,一氧化二氮流量为2.4slm,压力为1700mTorr,射频功率4300瓦,持续时间3~5分钟;
(6)氮气吹扫冷却,温度为420℃,氮气流量为8slm,压力为10000mTorr,吹扫时间5~8分钟。
实施例3
本发明提供一种制备具有抗PID效应的减反射膜的方法,其特征在于包括下面的步骤:
(1)对炉管抽真空,保持炉内温度420℃,压力80mTorr,时间为4分钟;
(2)对硅片进行预处理,温度420℃,一氧化二氮流量为4.8slm,压力为1700 mTorr,预处理3分钟;
(3)压力测试,保证设备内部压力50mTorr恒定,保持0.2~0.5分钟;
(4)预沉积,温度为420℃,氨气流量为0.7slm,硅烷流量为200 sccm,一氧化二氮流量为4.2slm,压力为1000mTorr,射频功率4300瓦,持续时间0.3~0.5分钟;
(5)沉积,温度为450℃,氨气流量为2100sccm,硅烷流量为8000sccm,一氧化二氮流量为2.9slm,压力为1700mTorr,射频功率4300瓦,持续时间3~5分钟;
(6)氮气吹扫冷却,温度为420℃,氮气流量为6slm,压力为10000mTorr,吹扫时间5~8分钟。
实施例4
本发明提供一种制备具有抗PID效应的减反射膜的方法,其特征在于包括下面的步骤:
(1)对炉管抽真空,保持炉内温度420℃,压力80mTorr,时间为4分钟;
(2)对硅片进行预处理,温度420℃,一氧化二氮流量为5.2 slm,压力为1700 mTorr,预处理3分钟;
(3)压力测试,保证设备内部压力50mTorr恒定,保持0.2~0.5分钟;
(4)预沉积,温度为420℃,氨气流量为0.9slm,硅烷流量为190 sccm,一氧化二氮流量为5.1slm,压力为1000mTorr,射频功率4300瓦,持续时间0.4分钟;
(5)沉积,温度为450℃,氨气流量为2080sccm,硅烷流量为8500sccm,一氧化二氮流量为3.4slm,压力为1700mTorr,射频功率4300瓦,持续时间3~5分钟;
(6)氮气吹扫冷却,温度为420℃,氮气流量为12slm,压力为10000mTorr,吹扫时间5~8分钟。
Claims (5)
1.一种制备具有抗PID效应的减反射膜的方法,其特征在于包括下面的步骤:
(1)对炉管抽真空,保持炉内温度420℃,压力80mTorr,时间为4分钟;
(2)对硅片进行预处理,温度420℃,一氧化二氮流量为3.8~5.2slm,压力为1700mTorr,预处理3分钟;
(3)压力测试,保证设备内部压力50mTorr恒定,保持0.2~0.5分钟;
(4)预沉积,温度为420℃,氨气流量为0.1 ~0.9slm,硅烷流量为180~200sccm,一氧化二氮流量为3.5~5.1slm,压力为1000mTorr,射频功率4300瓦,持续时间0.3~0.5分钟;
(5)沉积,温度为450℃,氨气流量为2000~2200sccm,硅烷流量为7000~8500sccm,一氧化二氮流量为2~3.4slm,压力为1700mTorr,射频功率4300瓦,持续时间3~5分钟;
(6)氮气吹扫冷却,温度为420℃,氮气流量为6~12slm,压力为10000mTorr,吹扫时间5~8分钟。
2.根据权利要求1所述的制备具有抗PID效应的减反射膜的方法,其特征在于:步骤(2)中一氧化二氮流量为4.4slm。
3.根据权利要求1所述的制备具有抗PID效应的减反射膜的方法,其特征在于:步骤(4)中氨气为0.5slm,硅烷为200sccm,一氧化二氮4.1slm。
4.根据权利要求1所述的制备具有抗PID效应的减反射膜的方法,其特征在于:步骤(5)中氨气流量为2100sccm,硅烷流量为7500sccm,一氧化二氮流量为2.4slm。
5.根据权利要求1所述的制备具有抗PID效应的减反射膜的方法,其特征在于:步骤(6)中氮气流量10slm,吹扫时间5分钟。
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CN201210321237.0A CN102864439B (zh) | 2012-09-03 | 2012-09-03 | 一种制备具有抗pid效应的减反射膜的方法 |
EP13832787.9A EP2894238B1 (en) | 2012-09-03 | 2013-06-20 | Preparing method of anti-reflection film having anti-pid effect |
JP2015528844A JP6025985B2 (ja) | 2012-09-03 | 2013-06-20 | アンチpid効果を有する反射防止コーティングの製作方法 |
PCT/CN2013/077564 WO2014032457A1 (zh) | 2012-09-03 | 2013-06-20 | 一种制备具有抗pid效应的减反射膜的方法 |
US14/425,255 US9548404B2 (en) | 2012-09-03 | 2013-06-20 | Method for fabricating anti-reflection film with anti-PID effect |
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WO2014133003A1 (ja) * | 2013-02-27 | 2014-09-04 | 日本ゼオン株式会社 | 太陽電池モジュール及びその製造方法 |
BE1020776A5 (nl) | 2013-05-27 | 2014-04-01 | Futech | Werkwijze en inrichting voor het detecteren, regenereren en/of voorkomen van defecten in een zonnepaneelinstallatie. |
CN104538486B (zh) * | 2014-11-19 | 2017-01-25 | 横店集团东磁股份有限公司 | 一种晶硅电池笑气直接生长氧化硅膜的制备工艺 |
CN106024973B (zh) * | 2016-05-31 | 2017-11-24 | 宁夏银星能源光伏发电设备制造有限公司 | 一种抗pid单晶太阳电池镀双层减反射膜工艺 |
CN106299023B (zh) * | 2016-08-26 | 2017-12-22 | 奥特斯维能源(太仓)有限公司 | 一种抗pid太阳能电池返工片的处理方法 |
CN108306612B (zh) | 2017-12-20 | 2019-11-26 | 华为技术有限公司 | 一种光伏电站中的光伏组件衰减修复方法和装置 |
CN109713080A (zh) * | 2018-12-21 | 2019-05-03 | 苏州阿特斯阳光电力科技有限公司 | 光伏组件的抗衰减处理方法 |
CN112071928B (zh) * | 2020-09-11 | 2023-03-24 | 晋能清洁能源科技股份公司 | 一种perc电池片的制备方法 |
CN114709295B (zh) * | 2022-06-06 | 2022-09-02 | 一道新能源科技(衢州)有限公司 | 一种降低perc电池片衰减的方法及装置 |
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