FR2784228B1 - PROCEDE DE FORMATION D'UN FILM ANTIREFLECHISSANT SiON, NON-POLLUANT VIS-VIS DES RESINES PHOTORESISTANTES POUR U.V. LOINTAIN - Google Patents

PROCEDE DE FORMATION D'UN FILM ANTIREFLECHISSANT SiON, NON-POLLUANT VIS-VIS DES RESINES PHOTORESISTANTES POUR U.V. LOINTAIN

Info

Publication number
FR2784228B1
FR2784228B1 FR9812310A FR9812310A FR2784228B1 FR 2784228 B1 FR2784228 B1 FR 2784228B1 FR 9812310 A FR9812310 A FR 9812310A FR 9812310 A FR9812310 A FR 9812310A FR 2784228 B1 FR2784228 B1 FR 2784228B1
Authority
FR
France
Prior art keywords
reflective
far
forming
sion film
resistant resins
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9812310A
Other languages
English (en)
Other versions
FR2784228A1 (fr
Inventor
Patrick Schiavone
Frederic Gaillard
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Orange SA
Original Assignee
France Telecom SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by France Telecom SA filed Critical France Telecom SA
Priority to FR9812310A priority Critical patent/FR2784228B1/fr
Priority to EP99946272A priority patent/EP1121715A1/fr
Priority to US09/806,808 priority patent/US6528341B1/en
Priority to PCT/FR1999/002337 priority patent/WO2000021123A1/fr
Publication of FR2784228A1 publication Critical patent/FR2784228A1/fr
Application granted granted Critical
Publication of FR2784228B1 publication Critical patent/FR2784228B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0276—Photolithographic processes using an anti-reflective coating
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/11—Anti-reflection coatings
    • G02B1/113—Anti-reflection coatings using inorganic layer materials only
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/954—Making oxide-nitride-oxide device

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Structural Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Architecture (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
FR9812310A 1998-10-01 1998-10-01 PROCEDE DE FORMATION D'UN FILM ANTIREFLECHISSANT SiON, NON-POLLUANT VIS-VIS DES RESINES PHOTORESISTANTES POUR U.V. LOINTAIN Expired - Fee Related FR2784228B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR9812310A FR2784228B1 (fr) 1998-10-01 1998-10-01 PROCEDE DE FORMATION D'UN FILM ANTIREFLECHISSANT SiON, NON-POLLUANT VIS-VIS DES RESINES PHOTORESISTANTES POUR U.V. LOINTAIN
EP99946272A EP1121715A1 (fr) 1998-10-01 1999-10-01 PROCEDE DE FORMATION D'UN FILM ANTIREFLECHISSANT SiON, NON POLLUANT VIS-A-VIS DES RESINES PHOTORESISTANTES POUR UV LOINTAIN
US09/806,808 US6528341B1 (en) 1998-10-01 1999-10-01 Method of forming a sion antireflection film which is noncontaminating with respect to deep-uv photoresists
PCT/FR1999/002337 WO2000021123A1 (fr) 1998-10-01 1999-10-01 PROCEDE DE FORMATION D'UN FILM ANTIREFLECHISSANT SiON, NON POLLUANT VIS-A-VIS DES RESINES PHOTORESISTANTES POUR UV LOINTAIN

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9812310A FR2784228B1 (fr) 1998-10-01 1998-10-01 PROCEDE DE FORMATION D'UN FILM ANTIREFLECHISSANT SiON, NON-POLLUANT VIS-VIS DES RESINES PHOTORESISTANTES POUR U.V. LOINTAIN

Publications (2)

Publication Number Publication Date
FR2784228A1 FR2784228A1 (fr) 2000-04-07
FR2784228B1 true FR2784228B1 (fr) 2002-01-11

Family

ID=9531091

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9812310A Expired - Fee Related FR2784228B1 (fr) 1998-10-01 1998-10-01 PROCEDE DE FORMATION D'UN FILM ANTIREFLECHISSANT SiON, NON-POLLUANT VIS-VIS DES RESINES PHOTORESISTANTES POUR U.V. LOINTAIN

Country Status (4)

Country Link
US (1) US6528341B1 (fr)
EP (1) EP1121715A1 (fr)
FR (1) FR2784228B1 (fr)
WO (1) WO2000021123A1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW522475B (en) * 2000-05-12 2003-03-01 Applied Materials Inc Method for improving chemical vapor deposition processing
US6828226B1 (en) * 2002-01-09 2004-12-07 Taiwan Semiconductor Manufacturing Company, Limited Removal of SiON residue after CMP
CN102864439B (zh) * 2012-09-03 2014-04-02 东方电气集团(宜兴)迈吉太阳能科技有限公司 一种制备具有抗pid效应的减反射膜的方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2708533B2 (ja) * 1989-03-14 1998-02-04 富士通株式会社 Ｃｖｄ装置の残留ガス除去方法
JPH06267835A (ja) * 1993-03-12 1994-09-22 Seiko Instr Inc 薄膜のパターニング方法
US5710067A (en) * 1995-06-07 1998-01-20 Advanced Micro Devices, Inc. Silicon oxime film
US5647953A (en) * 1995-12-22 1997-07-15 Lam Research Corporation Plasma cleaning method for removing residues in a plasma process chamber
JPH09186149A (ja) * 1995-12-28 1997-07-15 Fujitsu Ltd 半導体製造装置のクリーニング方法及び半導体装置の製造方法
US6013582A (en) * 1997-12-08 2000-01-11 Applied Materials, Inc. Method for etching silicon oxynitride and inorganic antireflection coatings
US6004850A (en) * 1998-02-23 1999-12-21 Motorola Inc. Tantalum oxide anti-reflective coating (ARC) integrated with a metallic transistor gate electrode and method of formation
US6326231B1 (en) * 1998-12-08 2001-12-04 Advanced Micro Devices, Inc. Use of silicon oxynitride ARC for metal layers

Also Published As

Publication number Publication date
EP1121715A1 (fr) 2001-08-08
WO2000021123A1 (fr) 2000-04-13
US6528341B1 (en) 2003-03-04
FR2784228A1 (fr) 2000-04-07

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20140630