FR2684794B1 - Procede de formation d'un film mince de thermistor. - Google Patents

Procede de formation d'un film mince de thermistor.

Info

Publication number
FR2684794B1
FR2684794B1 FR9214798A FR9214798A FR2684794B1 FR 2684794 B1 FR2684794 B1 FR 2684794B1 FR 9214798 A FR9214798 A FR 9214798A FR 9214798 A FR9214798 A FR 9214798A FR 2684794 B1 FR2684794 B1 FR 2684794B1
Authority
FR
France
Prior art keywords
forming
thin film
thermistor thin
thermistor
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9214798A
Other languages
English (en)
Other versions
FR2684794A1 (fr
Inventor
Tadashi Yonezawa
Seiji Yamanaka
Takeshi Soe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Materials Corp
Original Assignee
Mitsubishi Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP34913991A external-priority patent/JP3161477B2/ja
Priority claimed from JP01831392A external-priority patent/JP3166786B2/ja
Priority claimed from JP07635292A external-priority patent/JP3166790B2/ja
Priority claimed from JP07635392A external-priority patent/JP3191826B2/ja
Priority claimed from JP07635492A external-priority patent/JP3183303B2/ja
Priority claimed from JP09593792A external-priority patent/JP3209235B2/ja
Priority claimed from JP25074692A external-priority patent/JP3183309B2/ja
Priority claimed from JP28243692A external-priority patent/JP3175746B2/ja
Priority claimed from JP28243592A external-priority patent/JP3183313B2/ja
Priority claimed from JP28243492A external-priority patent/JP3183312B2/ja
Application filed by Mitsubishi Materials Corp filed Critical Mitsubishi Materials Corp
Publication of FR2684794A1 publication Critical patent/FR2684794A1/fr
Application granted granted Critical
Publication of FR2684794B1 publication Critical patent/FR2684794B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/81—Coating or impregnation
    • C04B41/85—Coating or impregnation with inorganic materials
    • C04B41/87—Ceramics
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
    • C04B41/5025—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials with ceramic materials
    • C04B41/5027—Oxide ceramics in general; Specific oxide ceramics not covered by C04B41/5029 - C04B41/5051
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
    • C23C18/1208—Oxides, e.g. ceramics
    • C23C18/1216—Metal oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/065—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thick film techniques, e.g. serigraphy
    • H01C17/06506—Precursor compositions therefor, e.g. pastes, inks, glass frits
    • H01C17/06513—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component
    • H01C17/06533—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component composed of oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/065—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thick film techniques, e.g. serigraphy
    • H01C17/06506—Precursor compositions therefor, e.g. pastes, inks, glass frits
    • H01C17/06593—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the temporary binder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
    • H01C7/042—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient mainly consisting of inorganic non-metallic substances
    • H01C7/043—Oxides or oxidic compounds
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2111/00—Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
    • C04B2111/00474—Uses not provided for elsewhere in C04B2111/00
    • C04B2111/00844—Uses not provided for elsewhere in C04B2111/00 for electronic applications

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Inorganic Chemistry (AREA)
  • Structural Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Electromagnetism (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Catalysts (AREA)
  • Oxygen, Ozone, And Oxides In General (AREA)
FR9214798A 1991-12-06 1992-12-03 Procede de formation d'un film mince de thermistor. Expired - Fee Related FR2684794B1 (fr)

Applications Claiming Priority (10)

Application Number Priority Date Filing Date Title
JP34913991A JP3161477B2 (ja) 1991-12-06 1991-12-06 マンガンコバルト酸化物薄膜の形成方法
JP01831392A JP3166786B2 (ja) 1992-01-06 1992-01-06 マンガンコバルト酸化物薄膜の形成方法
JP07635392A JP3191826B2 (ja) 1992-02-27 1992-02-27 マンガンコバルト酸化物薄膜の形成方法
JP07635492A JP3183303B2 (ja) 1992-02-27 1992-02-27 マンガンコバルト酸化物薄膜の形成方法
JP07635292A JP3166790B2 (ja) 1992-02-27 1992-02-27 マンガンコバルト酸化物薄膜の形成方法
JP09593792A JP3209235B2 (ja) 1992-03-23 1992-03-23 マンガンコバルト酸化物薄膜の形成方法
JP25074692A JP3183309B2 (ja) 1992-08-26 1992-08-26 マンガンコバルト銅酸化物薄膜の形成方法
JP28243692A JP3175746B2 (ja) 1992-09-28 1992-09-28 サーミスタ薄膜の形成方法
JP28243592A JP3183313B2 (ja) 1992-09-28 1992-09-28 マンガンニッケル系酸化物薄膜の形成方法
JP28243492A JP3183312B2 (ja) 1992-09-28 1992-09-28 マンガンコバルト系酸化物薄膜の形成方法

Publications (2)

Publication Number Publication Date
FR2684794A1 FR2684794A1 (fr) 1993-06-11
FR2684794B1 true FR2684794B1 (fr) 1996-08-02

Family

ID=27579690

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9214798A Expired - Fee Related FR2684794B1 (fr) 1991-12-06 1992-12-03 Procede de formation d'un film mince de thermistor.

Country Status (4)

Country Link
US (1) US5273776A (fr)
DE (1) DE4240928C2 (fr)
FR (1) FR2684794B1 (fr)
GB (1) GB2262107B (fr)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2290308A (en) * 1994-06-14 1995-12-20 British Ceramic Res Ltd Decorative material
US5497139A (en) * 1994-09-23 1996-03-05 Matsushita Electric Industrial Co., Ltd. Temperature sensor and its manufacturing method
JP2976028B1 (ja) * 1998-10-13 1999-11-10 工業技術院長 緻密でエピタキシャルな金属酸化物膜の製造方法と、その金属酸化物前駆体及びその製造方法
WO2000055091A1 (fr) * 1999-03-12 2000-09-21 Nagase Chemtex Corporation Compositions de formation de couches minces d'oxyde metallique
DE19915525A1 (de) * 1999-04-07 2000-11-02 Bosch Gmbh Robert Temperaturfühler mit wenigstens einer Leiterbahn und Verfahren zur Herstellung eines Temperaturfühlers
KR100674692B1 (ko) 1999-06-03 2007-01-26 마쯔시다덴기산교 가부시키가이샤 박막서미스터소자 및 박막서미스터소자의 제조방법
EP1371070B1 (fr) * 2001-03-16 2011-03-09 Vishay Intertechnology, Inc. Thermistances a couche mince
US6880234B2 (en) 2001-03-16 2005-04-19 Vishay Intertechnology, Inc. Method for thin film NTC thermistor
ES2197785B1 (es) * 2001-12-18 2005-03-01 Centro De Investigaciones Energeticas, Medioambientales Y Tecnologicas (C.I.E.M.A.T.) Procedimiento para depositar recubrimientos de metales y oxidos metalicos.
TR201900926T4 (tr) * 2008-06-13 2019-02-21 Ceres Ip Co Ltd Seramik filmlerin kaplanması için yöntem.
WO2011036730A1 (fr) * 2009-09-28 2011-03-31 第一工業製薬株式会社 Composition contenant un sel métallique, substrat, et procédé de production dudit substrat
CN103241781B (zh) * 2013-04-19 2014-09-03 浙江大学 一种制备多孔Co3O4粉体的方法

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2596284A (en) * 1949-09-15 1952-05-13 Petcar Res Corp Method of forming thermistor by impregnation
US3061476A (en) * 1958-04-01 1962-10-30 Barnes Eng Co Method of making thermistor bolometers
US3330697A (en) * 1963-08-26 1967-07-11 Sprague Electric Co Method of preparing lead and alkaline earth titanates and niobates and coating method using the same to form a capacitor
US3364565A (en) * 1965-02-10 1968-01-23 Victory Engineering Corp Method of making a thermistor
US3477055A (en) * 1967-12-22 1969-11-04 Gen Motors Corp Thermistor construction
BE785764A (fr) * 1971-07-08 1973-01-03 Glaverbel
FR2204454B1 (fr) * 1972-10-30 1975-09-12 Pro Catalyse
DE2428532C3 (de) * 1973-06-20 1984-02-23 Matsushita Electric Industrial Co., Ltd., Kadoma, Osaka Zusammensetzungen für einen Hochtemperatur-Heißleiter
JPS608606B2 (ja) * 1975-07-02 1985-03-04 富士写真フイルム株式会社 強磁性粉末の製法
DE2720049C3 (de) * 1977-05-04 1980-07-10 Siemens Ag, 1000 Berlin Und 8000 Muenchen Dünnschicht-Heißleiter und Verfahren zu seiner Herstellung
JPS5854089B2 (ja) * 1979-06-22 1983-12-02 株式会社日立製作所 透明導電膜の形成方法
JPS6019610B2 (ja) * 1979-12-14 1985-05-17 株式会社日立製作所 透明導電膜形成法
US4369105A (en) * 1981-03-25 1983-01-18 The Dow Chemical Company Substituted cobalt oxide spinels
JPH076072B2 (ja) * 1986-08-08 1995-01-25 日本ペイント株式会社 フエライト膜の形成方法
US4960618A (en) * 1987-01-07 1990-10-02 Tokyo Ohka Kogyo Co., Ltd. Process for formation of metal oxide film
EP0277020B1 (fr) * 1987-01-30 1995-04-19 Director-General of the Agency of Industrial Science and Technology Procédé de fabrication d'un matériau supraconducteur
JPS63266801A (ja) * 1987-04-24 1988-11-02 Ooizumi Seisakusho:Kk 薄膜サ−ミスタの製造方法
US4897378A (en) * 1987-05-22 1990-01-30 Massachusetts Institute Of Technology Preparation of thin film superconducting oxides
JPH02146703A (ja) * 1988-08-19 1990-06-05 Fujikura Ltd 薄膜抵抗体の製造方法
JPH0767048A (ja) * 1993-08-30 1995-03-10 Toshiba Corp 表示制御装置

Also Published As

Publication number Publication date
GB2262107A (en) 1993-06-09
DE4240928A1 (fr) 1993-06-09
GB2262107B (en) 1995-01-18
DE4240928C2 (de) 1995-11-02
FR2684794A1 (fr) 1993-06-11
GB9225339D0 (en) 1993-01-27
US5273776A (en) 1993-12-28

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20100831