FR2691288B1 - Procede de formation de films semi-conducteurs monocristallins. - Google Patents

Procede de formation de films semi-conducteurs monocristallins.

Info

Publication number
FR2691288B1
FR2691288B1 FR929205746A FR9205746A FR2691288B1 FR 2691288 B1 FR2691288 B1 FR 2691288B1 FR 929205746 A FR929205746 A FR 929205746A FR 9205746 A FR9205746 A FR 9205746A FR 2691288 B1 FR2691288 B1 FR 2691288B1
Authority
FR
France
Prior art keywords
crystal semiconductor
semiconductor films
forming single
forming
films
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR929205746A
Other languages
English (en)
Other versions
FR2691288A1 (fr
Inventor
Sugahara Kazuyuki
Ipposhi Takashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to US07/877,811 priority Critical patent/US5338388A/en
Priority to GB9209789A priority patent/GB2266993B/en
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to FR929205746A priority patent/FR2691288B1/fr
Priority claimed from JP4140800A external-priority patent/JPH05166839A/ja
Priority to JP4140800A priority patent/JPH05166839A/ja
Priority to DE4233777A priority patent/DE4233777C2/de
Priority to FR9212429A priority patent/FR2682810B1/fr
Priority to KR1019920019130A priority patent/KR970003848B1/ko
Publication of FR2691288A1 publication Critical patent/FR2691288A1/fr
Publication of FR2691288B1 publication Critical patent/FR2691288B1/fr
Application granted granted Critical
Priority to US08/416,110 priority patent/US5528054A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02683—Continuous wave laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02488—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02598—Microstructure monocrystalline
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02689—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using particle beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02691—Scanning of a beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8221—Three dimensional integrated circuits stacked in different levels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H01L21/76272—Vertical isolation by lateral overgrowth techniques, i.e. ELO techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H01L21/76281—Lateral isolation by selective oxidation of silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/903—Dendrite or web or cage technique
    • Y10S117/904—Laser beam
FR929205746A 1991-10-17 1992-05-12 Procede de formation de films semi-conducteurs monocristallins. Expired - Lifetime FR2691288B1 (fr)

Priority Applications (8)

Application Number Priority Date Filing Date Title
US07/877,811 US5338388A (en) 1992-05-04 1992-05-04 Method of forming single-crystal semiconductor films
GB9209789A GB2266993B (en) 1992-05-04 1992-05-06 Method of forming single-crystal semiconductor films
FR929205746A FR2691288B1 (fr) 1992-05-04 1992-05-12 Procede de formation de films semi-conducteurs monocristallins.
JP4140800A JPH05166839A (ja) 1991-10-17 1992-06-01 半導体装置およびその製造方法
DE4233777A DE4233777C2 (de) 1991-10-17 1992-10-07 Herstellungsverfahren für eine Halbleitereinrichtung
FR9212429A FR2682810B1 (fr) 1991-10-17 1992-10-16 Dispositif a semiconducteurs ayant une region active dans une couche de semiconducteur sur une couche isolante, et procede de fabrication de ce dispositif.
KR1019920019130A KR970003848B1 (ko) 1991-10-17 1992-10-17 반도체 장치 및 그 제조방법
US08/416,110 US5528054A (en) 1991-10-17 1995-04-03 Semiconductor device having active region in semiconductor layer on insulator layer and manufacturing method thereof

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US07/877,811 US5338388A (en) 1992-05-04 1992-05-04 Method of forming single-crystal semiconductor films
GB9209789A GB2266993B (en) 1992-05-04 1992-05-06 Method of forming single-crystal semiconductor films
FR929205746A FR2691288B1 (fr) 1992-05-04 1992-05-12 Procede de formation de films semi-conducteurs monocristallins.
JP4140800A JPH05166839A (ja) 1991-10-17 1992-06-01 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
FR2691288A1 FR2691288A1 (fr) 1993-11-19
FR2691288B1 true FR2691288B1 (fr) 1994-08-05

Family

ID=27446848

Family Applications (1)

Application Number Title Priority Date Filing Date
FR929205746A Expired - Lifetime FR2691288B1 (fr) 1991-10-17 1992-05-12 Procede de formation de films semi-conducteurs monocristallins.

Country Status (3)

Country Link
US (1) US5338388A (fr)
FR (1) FR2691288B1 (fr)
GB (1) GB2266993B (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5753542A (en) * 1985-08-02 1998-05-19 Semiconductor Energy Laboratory Co., Ltd. Method for crystallizing semiconductor material without exposing it to air
US5496768A (en) * 1993-12-03 1996-03-05 Casio Computer Co., Ltd. Method of manufacturing polycrystalline silicon thin film
US6602758B2 (en) * 2001-06-15 2003-08-05 Agere Systems, Inc. Formation of silicon on insulator (SOI) devices as add-on modules for system on a chip processing

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3585088A (en) * 1968-10-18 1971-06-15 Ibm Methods of producing single crystals on supporting substrates
JPS56142630A (en) * 1980-04-09 1981-11-07 Fujitsu Ltd Manufacture of semiconductor device
US4323417A (en) * 1980-05-06 1982-04-06 Texas Instruments Incorporated Method of producing monocrystal on insulator
JPS5734331A (en) * 1980-08-11 1982-02-24 Toshiba Corp Manufacture of semiconductor device
FR2532783A1 (fr) * 1982-09-07 1984-03-09 Vu Duy Phach Machine de traitement thermique pour semiconducteurs
JPS59205711A (ja) * 1983-03-31 1984-11-21 Fujitsu Ltd 半導体装置の製造方法
JPS61289617A (ja) * 1985-06-18 1986-12-19 Sony Corp 薄膜単結晶の製造装置
EP0235819B1 (fr) * 1986-03-07 1992-06-10 Iizuka, Kozo Procédé pour fabriquer une couche semi-conductrice monocristalline
US4760036A (en) * 1987-06-15 1988-07-26 Delco Electronics Corporation Process for growing silicon-on-insulator wafers using lateral epitaxial growth with seed window oxidation
KR890008943A (ko) * 1987-11-25 1989-07-13 이반 밀러 레르너 기판상의 단결정층 제조방법
EP0431685A1 (fr) * 1989-12-05 1991-06-12 Koninklijke Philips Electronics N.V. Procédé de fabrication de bandes sans défaut et de faible épaisseur de silicium monocristallin sur isolant

Also Published As

Publication number Publication date
FR2691288A1 (fr) 1993-11-19
GB9209789D0 (en) 1992-06-17
GB2266993B (en) 1996-01-10
GB2266993A (en) 1993-11-17
US5338388A (en) 1994-08-16

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