DE69115131D1 - Verfahren zur Ziehung von Halbleitereinkristallen. - Google Patents

Verfahren zur Ziehung von Halbleitereinkristallen.

Info

Publication number
DE69115131D1
DE69115131D1 DE69115131T DE69115131T DE69115131D1 DE 69115131 D1 DE69115131 D1 DE 69115131D1 DE 69115131 T DE69115131 T DE 69115131T DE 69115131 T DE69115131 T DE 69115131T DE 69115131 D1 DE69115131 D1 DE 69115131D1
Authority
DE
Germany
Prior art keywords
single crystals
semiconductor single
pulling semiconductor
pulling
crystals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69115131T
Other languages
English (en)
Other versions
DE69115131T2 (de
Inventor
Izumi Fusegawa
Hirotoshi Yamagishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Publication of DE69115131D1 publication Critical patent/DE69115131D1/de
Application granted granted Critical
Publication of DE69115131T2 publication Critical patent/DE69115131T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C30B15/305—Stirring of the melt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/917—Magnetic

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DE69115131T 1990-05-25 1991-05-20 Verfahren zur Ziehung von Halbleitereinkristallen. Expired - Fee Related DE69115131T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2136365A JPH0431386A (ja) 1990-05-25 1990-05-25 半導体単結晶引上方法

Publications (2)

Publication Number Publication Date
DE69115131D1 true DE69115131D1 (de) 1996-01-18
DE69115131T2 DE69115131T2 (de) 1996-08-01

Family

ID=15173466

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69115131T Expired - Fee Related DE69115131T2 (de) 1990-05-25 1991-05-20 Verfahren zur Ziehung von Halbleitereinkristallen.

Country Status (4)

Country Link
US (1) US5359959A (de)
EP (1) EP0461769B1 (de)
JP (1) JPH0431386A (de)
DE (1) DE69115131T2 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0692773A (ja) * 1991-06-07 1994-04-05 Mitsubishi Materials Corp 単結晶引上方法
JPH07247197A (ja) * 1994-03-09 1995-09-26 Fujitsu Ltd 半導体装置とその製造方法
DE19529481A1 (de) * 1995-08-10 1997-02-13 Wacker Siltronic Halbleitermat Verfahren und Vorrichtung zur Herstellung von Einkristallen
JP3898247B2 (ja) * 1995-12-06 2007-03-28 信越半導体株式会社 単結晶の製造装置および製造方法
JP3520883B2 (ja) * 1995-12-29 2004-04-19 信越半導体株式会社 単結晶の製造方法
JP3969460B2 (ja) * 1996-06-20 2007-09-05 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 磁場印加による半導体単結晶の製造方法
EP0949360A1 (de) * 1998-04-07 1999-10-13 Shin-Etsu Handotai Company Limited Verfahren zur Herstellung eines Silizium-Einkristalls mittels Czochralski-Verfahren
DE60041429D1 (de) * 1999-03-17 2009-03-12 Shinetsu Handotai Kk Verfahren zur herstellung von silicium einkristallen
WO2001063027A1 (fr) 2000-02-28 2001-08-30 Shin-Etsu Handotai Co., Ltd Procede de preparation d'un monocristal de silicium et monocristal de silicium obtenu
JP3598972B2 (ja) * 2000-12-20 2004-12-08 三菱住友シリコン株式会社 シリコン単結晶の製造方法
US6565652B1 (en) 2001-12-06 2003-05-20 Seh America, Inc. High resistivity silicon wafer and method of producing same using the magnetic field Czochralski method
JP2005213097A (ja) 2004-01-30 2005-08-11 Sumitomo Mitsubishi Silicon Corp シリコン単結晶の引上げ方法
KR100749936B1 (ko) 2005-05-11 2007-08-16 주식회사 실트론 실리콘 단결정 잉곳 및 이의 제조 방법
JP4829176B2 (ja) * 2007-06-08 2011-12-07 シルトロニック・ジャパン株式会社 単結晶の製造方法
JP5228671B2 (ja) * 2008-07-24 2013-07-03 株式会社Ｓｕｍｃｏ シリコン単結晶の育成方法
CN108291327B (zh) 2015-11-02 2021-01-08 胜高股份有限公司 单晶硅的制造方法及单晶硅
CN105350070A (zh) * 2015-12-09 2016-02-24 天津市环欧半导体材料技术有限公司 一种利用变频磁场控制直拉法硅单晶氧含量的方法
DE102015226399A1 (de) 2015-12-22 2017-06-22 Siltronic Ag Siliciumscheibe mit homogener radialer Sauerstoffvariation
CN112095154B (zh) * 2019-06-18 2021-05-14 上海新昇半导体科技有限公司 一种半导体晶体生长装置
CN114318499B (zh) * 2020-09-29 2023-07-11 万华化学集团电子材料有限公司 一种大直径半导体硅单晶的生长方法及单晶炉
CN114086241B (zh) * 2021-11-25 2023-03-28 西安奕斯伟材料科技有限公司 一种单晶硅棒的拉制方法及单晶硅棒

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3607139A (en) * 1968-05-02 1971-09-21 Air Reduction Single crystal growth and diameter control by magnetic melt agitation
US3929557A (en) * 1973-06-11 1975-12-30 Us Air Force Periodically and alternately accelerating and decelerating rotation rate of a feed crystal
GB2059932B (en) * 1979-09-20 1983-10-12 Sony Corp Solidification processes
JPH0244799B2 (ja) * 1981-10-26 1990-10-05 Sony Corp Ketsushoseichohoho
JPS5881086A (ja) * 1981-11-11 1983-05-16 松下電器産業株式会社 ミシン制御装置
US4637854A (en) * 1983-01-18 1987-01-20 Agency Of Industrial Science And Technology Method for producing GaAs single crystal
EP0135676A3 (de) * 1983-06-30 1989-02-01 International Business Machines Corporation Vorrichtung zur Kristallzüchtung nach Czochralski und Züchtungsverfahren mit dieser Vorrichtung
JPS6033291A (ja) * 1983-07-29 1985-02-20 Toshiba Ceramics Co Ltd 単結晶シリコンの製造方法
JPS6144797A (ja) * 1984-08-10 1986-03-04 Toshiba Corp 単結晶育成装置およびその制御方法
JPS6236096A (ja) * 1985-08-07 1987-02-17 Kawasaki Steel Corp 単結晶の製造方法およびその装置
JPS62182190A (ja) * 1986-02-03 1987-08-10 Sumitomo Electric Ind Ltd 化合物半導体単結晶の製造方法
US4659423A (en) * 1986-04-28 1987-04-21 International Business Machines Corporation Semiconductor crystal growth via variable melt rotation
JP2561072B2 (ja) * 1986-04-30 1996-12-04 東芝セラミツクス株式会社 単結晶の育成方法及びその装置
JP2556966B2 (ja) * 1986-04-30 1996-11-27 東芝セラミツクス株式会社 単結晶の育成装置
JPS6379789A (ja) * 1986-09-24 1988-04-09 Sumitomo Electric Ind Ltd 半導体単結晶の製造方法および装置
JPS63242991A (ja) * 1987-03-31 1988-10-07 Shin Etsu Handotai Co Ltd 結晶径制御方法

Also Published As

Publication number Publication date
JPH0431386A (ja) 1992-02-03
EP0461769A1 (de) 1991-12-18
DE69115131T2 (de) 1996-08-01
EP0461769B1 (de) 1995-12-06
US5359959A (en) 1994-11-01

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee