DE68901735D1 - Verfahren zur herstellung von halbleitenden einkristallen. - Google Patents

Verfahren zur herstellung von halbleitenden einkristallen.

Info

Publication number
DE68901735D1
DE68901735D1 DE8989104472T DE68901735T DE68901735D1 DE 68901735 D1 DE68901735 D1 DE 68901735D1 DE 8989104472 T DE8989104472 T DE 8989104472T DE 68901735 T DE68901735 T DE 68901735T DE 68901735 D1 DE68901735 D1 DE 68901735D1
Authority
DE
Germany
Prior art keywords
producing semi
conducting crystals
crystals
conducting
semi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8989104472T
Other languages
English (en)
Other versions
DE68901735T2 (de
Inventor
Tsunemasa Taguchi
Hirokuni C O Osaka Works Nanba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
PRODUCTION ENG ASS
Sumitomo Electric Industries Ltd
Original Assignee
PRODUCTION ENG ASS
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by PRODUCTION ENG ASS, Sumitomo Electric Industries Ltd filed Critical PRODUCTION ENG ASS
Publication of DE68901735D1 publication Critical patent/DE68901735D1/de
Application granted granted Critical
Publication of DE68901735T2 publication Critical patent/DE68901735T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te

Landscapes

  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE8989104472T 1988-03-14 1989-03-14 Verfahren zur herstellung von halbleitenden einkristallen. Expired - Lifetime DE68901735T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63059786A JPH01232732A (ja) 1988-03-14 1988-03-14 半導体結晶製造方法

Publications (2)

Publication Number Publication Date
DE68901735D1 true DE68901735D1 (de) 1992-07-16
DE68901735T2 DE68901735T2 (de) 1992-12-17

Family

ID=13123318

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8989104472T Expired - Lifetime DE68901735T2 (de) 1988-03-14 1989-03-14 Verfahren zur herstellung von halbleitenden einkristallen.

Country Status (4)

Country Link
US (1) US5015327A (de)
EP (1) EP0333120B1 (de)
JP (1) JPH01232732A (de)
DE (1) DE68901735T2 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69229265T2 (de) * 1991-03-18 1999-09-23 Trustees Of Boston University, Boston Verfahren zur herstellung und dotierung hochisolierender dünner schichten aus monokristallinem galliumnitrid
US6953703B2 (en) * 1991-03-18 2005-10-11 The Trustees Of Boston University Method of making a semiconductor device with exposure of sapphire substrate to activated nitrogen
US5633192A (en) * 1991-03-18 1997-05-27 Boston University Method for epitaxially growing gallium nitride layers
JP3465853B2 (ja) * 1994-01-25 2003-11-10 同和鉱業株式会社 ＺｎＳｅバルク単結晶の製造方法
US5997589A (en) * 1998-07-09 1999-12-07 Winbond Electronics Corp. Adjustment pumping plate design for the chamber of semiconductor equipment
US6217937B1 (en) 1998-07-15 2001-04-17 Cornell Research Foundation, Inc. High throughput OMVPE apparatus
JP2003218241A (ja) * 2002-01-23 2003-07-31 Mitsubishi Electric Corp 半導体記憶装置およびその製造方法、並びに半導体製造装置
JP5257328B2 (ja) * 2009-11-04 2013-08-07 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記憶媒体
JP5880264B2 (ja) * 2012-05-02 2016-03-08 宇部興産株式会社 化合物半導体製造装置から排出される有機金属化合物の捕集装置
US10358739B2 (en) 2016-12-15 2019-07-23 The United States Of America, As Represented By The Secretary Of The Air Force Heteroepitaxial hydrothermal crystal growth of zinc selenide

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4422888A (en) * 1981-02-27 1983-12-27 Xerox Corporation Method for successfully depositing doped II-VI epitaxial layers by organometallic chemical vapor deposition
JPS6011293A (ja) * 1983-06-29 1985-01-21 Sumitomo Electric Ind Ltd ＺｎＳｅ単結晶の製造方法
JPS60215596A (ja) * 1984-04-09 1985-10-28 Sumitomo Chem Co Ltd 有機金属熱分解気相エピタキシヤル成長法
JPH0617280B2 (ja) * 1987-03-18 1994-03-09 社団法人生産技術振興協会 ＺｎＳｅ単結晶作製法

Also Published As

Publication number Publication date
EP0333120B1 (de) 1992-06-10
DE68901735T2 (de) 1992-12-17
US5015327A (en) 1991-05-14
EP0333120A1 (de) 1989-09-20
JPH01232732A (ja) 1989-09-18

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee