DE68914146T2 - Verfahren zur herstellung von einzelkristallen. - Google Patents
Verfahren zur herstellung von einzelkristallen.Info
- Publication number
- DE68914146T2 DE68914146T2 DE68914146T DE68914146T DE68914146T2 DE 68914146 T2 DE68914146 T2 DE 68914146T2 DE 68914146 T DE68914146 T DE 68914146T DE 68914146 T DE68914146 T DE 68914146T DE 68914146 T2 DE68914146 T2 DE 68914146T2
- Authority
- DE
- Germany
- Prior art keywords
- single crystals
- producing single
- producing
- crystals
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/002—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
- C30B35/002—Crucibles or containers
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1092—Shape defined by a solid member other than seed or product [e.g., Bridgman-Stockbarger]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63313795A JPH02160687A (ja) | 1988-12-14 | 1988-12-14 | 単結晶製造方法 |
PCT/JP1989/001248 WO1990007021A1 (en) | 1988-12-14 | 1989-12-13 | Process for producing single crystal |
CA002008024A CA2008024C (en) | 1988-12-14 | 1990-01-18 | Production process of single crystals |
Publications (2)
Publication Number | Publication Date |
---|---|
DE68914146D1 DE68914146D1 (de) | 1994-04-28 |
DE68914146T2 true DE68914146T2 (de) | 1994-10-20 |
Family
ID=25673892
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE68914146T Expired - Fee Related DE68914146T2 (de) | 1988-12-14 | 1989-12-13 | Verfahren zur herstellung von einzelkristallen. |
Country Status (6)
Country | Link |
---|---|
US (1) | US5167759A (de) |
EP (1) | EP0401387B1 (de) |
JP (1) | JPH02160687A (de) |
CA (1) | CA2008024C (de) |
DE (1) | DE68914146T2 (de) |
WO (1) | WO1990007021A1 (de) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5312506A (en) * | 1987-06-15 | 1994-05-17 | Mitsui Mining Company, Limited | Method for growing single crystals from melt |
EP0913505B1 (de) * | 1991-08-22 | 2006-04-12 | Raytheon Company | Verfahren zum Entfernen einer B2O3-Einkapselungsmasse von einer Struktur |
DE19580737C2 (de) * | 1994-06-02 | 2002-02-21 | Kobe Steel Ltd | Verfahren und Vorrichtung zur Herstellung von Verbindungs-Einkristallen |
FR2757182B1 (fr) * | 1996-12-17 | 2001-01-26 | Saint Gobain Norton Ind Cerami | Procede et dispositif pour la croissance de cristal |
US6902619B2 (en) * | 2001-06-28 | 2005-06-07 | Ntu Ventures Pte. Ltd. | Liquid phase epitaxy |
WO2010047429A1 (en) * | 2008-10-22 | 2010-04-29 | Myungjoo Kwon | Double layered crucible for crystal growth |
JP5032523B2 (ja) | 2009-03-09 | 2012-09-26 | ジャパンスーパークォーツ株式会社 | 石英ガラスルツボ用栓と石英ガラスルツボおよびその取り扱い方法 |
JP4964274B2 (ja) * | 2009-06-02 | 2012-06-27 | ジャパンスーパークォーツ株式会社 | 石英ガラスルツボ用蓋と石英ガラスルツボおよびその取り扱い方法 |
CN102859051B (zh) * | 2010-03-29 | 2016-05-04 | 吉坤日矿日石金属株式会社 | Ii-vi族化合物半导体多晶的合成方法 |
JP2012236733A (ja) * | 2011-05-11 | 2012-12-06 | Shinshu Univ | 結晶育成用るつぼ及び結晶の育成方法 |
JP5698171B2 (ja) * | 2012-03-12 | 2015-04-08 | 信越化学工業株式会社 | 単結晶製造方法及び単結晶製造装置 |
CN103071780B (zh) * | 2013-01-15 | 2014-07-16 | 西北工业大学 | 一种用于镁合金定向凝固的坩埚及其制备方法 |
CN107620123B (zh) * | 2016-07-13 | 2020-09-08 | 清华大学 | 一种金属铂的半金属化合物的制备方法 |
CN114164485B (zh) * | 2021-12-10 | 2023-07-14 | 福建师范大学 | 一种Si、Te元素共同掺杂FeSe超导体材料的方法 |
CN117702275B (zh) * | 2024-02-05 | 2024-04-19 | 浙江康鹏半导体有限公司 | 基于双层坩埚的磷化铟单晶生长方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US1986196A (en) * | 1933-05-04 | 1935-01-01 | Universal Oil Prod Co | Apparatus for conducting reactions at elevated pressures |
US2547521A (en) * | 1948-12-30 | 1951-04-03 | Bell Telephone Labor Inc | Pressure bomb for chemical and physical reactions |
US3033659A (en) * | 1959-04-21 | 1962-05-08 | Gen Electric | Preparation of phosphor crystals |
JPS5130914A (de) * | 1974-09-09 | 1976-03-16 | Nippon Denso Co | |
US4083748A (en) * | 1975-10-30 | 1978-04-11 | Western Electric Company, Inc. | Method of forming and growing a single crystal of a semiconductor compound |
IL53370A0 (en) * | 1977-11-14 | 1978-01-31 | Uni Seal Decomposition Vessels | Liquid and vapour-tight vessel for performing decomposition reactions |
US4521272A (en) * | 1981-01-05 | 1985-06-04 | At&T Technologies, Inc. | Method for forming and growing a single crystal of a semiconductor compound |
GB2121828B (en) * | 1982-06-14 | 1985-12-11 | Philips Electronic Associated | Method of casting charges for use in a liquid phase epitaxy growth process |
JPS598690A (ja) * | 1982-07-05 | 1984-01-17 | Hitachi Cable Ltd | GaAs単結晶の製造方法 |
US4612082A (en) * | 1982-12-02 | 1986-09-16 | Texas Instruments Incorporated | Arsenic cell stabilization valve for gallium arsenide in-situ compounding |
JPS59193870A (ja) * | 1983-04-19 | 1984-11-02 | Nippon Mejifuijitsukusu Kk | 新規な二官能配位子化合物 |
JPS59193870U (ja) * | 1983-06-08 | 1984-12-22 | 東北金属工業株式会社 | 単結晶製造るつぼ |
JPS63225595A (ja) * | 1987-03-13 | 1988-09-20 | Fujitsu Ltd | 半導体結晶成長用アンプル |
JP2656038B2 (ja) * | 1987-06-15 | 1997-09-24 | 三井鉱山株式会社 | 融液からの単結晶育成方法 |
JPH01262289A (ja) * | 1988-04-12 | 1989-10-19 | Toshiba Corp | ウォータジェット推進機 |
-
1988
- 1988-12-14 JP JP63313795A patent/JPH02160687A/ja active Pending
-
1989
- 1989-12-13 US US07/555,498 patent/US5167759A/en not_active Expired - Fee Related
- 1989-12-13 DE DE68914146T patent/DE68914146T2/de not_active Expired - Fee Related
- 1989-12-13 WO PCT/JP1989/001248 patent/WO1990007021A1/ja active IP Right Grant
-
1990
- 1990-01-18 CA CA002008024A patent/CA2008024C/en not_active Expired - Fee Related
- 1990-07-04 EP EP90900983A patent/EP0401387B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0401387B1 (de) | 1994-03-23 |
EP0401387A4 (en) | 1991-07-24 |
EP0401387A1 (de) | 1990-12-12 |
CA2008024A1 (en) | 1991-07-18 |
WO1990007021A1 (en) | 1990-06-28 |
US5167759A (en) | 1992-12-01 |
CA2008024C (en) | 1993-10-19 |
JPH02160687A (ja) | 1990-06-20 |
DE68914146D1 (de) | 1994-04-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |