CN101114605A - 基板工作台以及热处理装置 - Google Patents
基板工作台以及热处理装置 Download PDFInfo
- Publication number
- CN101114605A CN101114605A CNA2007101270934A CN200710127093A CN101114605A CN 101114605 A CN101114605 A CN 101114605A CN A2007101270934 A CNA2007101270934 A CN A2007101270934A CN 200710127093 A CN200710127093 A CN 200710127093A CN 101114605 A CN101114605 A CN 101114605A
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- China
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- substrate stage
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
- C25D11/04—Anodisation of aluminium or alloys based thereon
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
- C25D11/04—Anodisation of aluminium or alloys based thereon
- C25D11/16—Pretreatment, e.g. desmutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68778—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting substrates others than wafers, e.g. chips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
Claims (9)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006203729 | 2006-07-26 | ||
JP2006203729A JP4294661B2 (ja) | 2006-07-26 | 2006-07-26 | 基板ステージ、熱処理装置および基板ステージの製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN101114605A true CN101114605A (zh) | 2008-01-30 |
Family
ID=38985868
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNA2007101270934A Pending CN101114605A (zh) | 2006-07-26 | 2007-07-04 | 基板工作台以及热处理装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7764355B2 (zh) |
JP (1) | JP4294661B2 (zh) |
KR (1) | KR100985270B1 (zh) |
CN (1) | CN101114605A (zh) |
TW (1) | TW200810008A (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102593035A (zh) * | 2008-08-08 | 2012-07-18 | 台湾积体电路制造股份有限公司 | 用于半导体晶片制造工艺的晶片承载装置 |
CN105556656A (zh) * | 2013-09-16 | 2016-05-04 | 应用材料公司 | 具有温度分布控制的加热式基板支撑件 |
CN106435682A (zh) * | 2016-11-11 | 2017-02-22 | 苏州胜禹材料科技股份有限公司 | 铝板阳极氧化设备及着色工艺 |
CN107675144A (zh) * | 2017-09-15 | 2018-02-09 | 武汉华星光电技术有限公司 | 等离子体增强化学气相沉积装置 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20100070888A (ko) * | 2008-12-18 | 2010-06-28 | 삼성전자주식회사 | 기판 처리 장치 |
JPWO2011077911A1 (ja) * | 2009-12-25 | 2013-05-02 | 株式会社クリエイティブ テクノロジー | 真空チャック |
KR101171316B1 (ko) * | 2010-04-06 | 2012-08-10 | (주)탑나노시스 | 씨엔티대전 방지 처리된 작업 스테이지의 수선 방법 |
FR2981951B1 (fr) * | 2011-10-26 | 2013-11-01 | Norsk Hydro As | Procede de finition anodisee d'un profile metallique a base d'aluminium, avec motif, et profile ainsi obtenu |
JP2017220652A (ja) * | 2016-06-10 | 2017-12-14 | 大学共同利用機関法人自然科学研究機構 | レーザ装置とその製造方法 |
JP6914078B2 (ja) * | 2017-03-31 | 2021-08-04 | 株式会社荏原製作所 | 真空吸着パッドおよび基板保持装置 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3374743B2 (ja) | 1998-03-05 | 2003-02-10 | 日本電気株式会社 | 基板熱処理装置及び同装置からの基板の分離方法 |
JP2001308075A (ja) | 2000-04-26 | 2001-11-02 | Toshiba Ceramics Co Ltd | ウェーハ支持体 |
JP4201502B2 (ja) | 2000-10-11 | 2008-12-24 | 独立行政法人産業技術総合研究所 | 静電チャックおよびその製造方法 |
JP4094262B2 (ja) | 2001-09-13 | 2008-06-04 | 住友大阪セメント株式会社 | 吸着固定装置及びその製造方法 |
JP4031732B2 (ja) | 2003-05-26 | 2008-01-09 | 京セラ株式会社 | 静電チャック |
KR101297489B1 (ko) * | 2005-06-17 | 2013-08-16 | 미쓰비시 가가꾸 가부시키가이샤 | 금속 산화물막, 적층체, 금속 부재 및 그 제조 방법 |
-
2006
- 2006-07-26 JP JP2006203729A patent/JP4294661B2/ja not_active Expired - Fee Related
-
2007
- 2007-06-27 TW TW096123318A patent/TW200810008A/zh unknown
- 2007-07-04 CN CNA2007101270934A patent/CN101114605A/zh active Pending
- 2007-07-18 US US11/779,571 patent/US7764355B2/en not_active Expired - Fee Related
- 2007-07-25 KR KR1020070074364A patent/KR100985270B1/ko not_active IP Right Cessation
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102593035A (zh) * | 2008-08-08 | 2012-07-18 | 台湾积体电路制造股份有限公司 | 用于半导体晶片制造工艺的晶片承载装置 |
US8652260B2 (en) | 2008-08-08 | 2014-02-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus for holding semiconductor wafers |
CN102593035B (zh) * | 2008-08-08 | 2016-03-30 | 台湾积体电路制造股份有限公司 | 用于半导体晶片制造工艺的晶片承载装置 |
US10867832B2 (en) | 2008-08-08 | 2020-12-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus for holding semiconductor wafers |
CN105556656A (zh) * | 2013-09-16 | 2016-05-04 | 应用材料公司 | 具有温度分布控制的加热式基板支撑件 |
CN105556656B (zh) * | 2013-09-16 | 2018-11-02 | 应用材料公司 | 具有温度分布控制的加热式基板支撑件 |
CN106435682A (zh) * | 2016-11-11 | 2017-02-22 | 苏州胜禹材料科技股份有限公司 | 铝板阳极氧化设备及着色工艺 |
CN107675144A (zh) * | 2017-09-15 | 2018-02-09 | 武汉华星光电技术有限公司 | 等离子体增强化学气相沉积装置 |
Also Published As
Publication number | Publication date |
---|---|
TW200810008A (en) | 2008-02-16 |
JP4294661B2 (ja) | 2009-07-15 |
JP2008034481A (ja) | 2008-02-14 |
KR100985270B1 (ko) | 2010-10-04 |
KR20080010320A (ko) | 2008-01-30 |
US7764355B2 (en) | 2010-07-27 |
US20080024742A1 (en) | 2008-01-31 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20080328 Address after: Sendai Prefecture, Miyagi Prefecture, Japan Applicant after: Northeastern University, National University Co-applicant after: Future Vision KK Address before: Sendai Prefecture, Miyagi Prefecture, Japan Applicant before: Northeastern University, National University Co-applicant before: Future Vision KK Co-applicant before: Koyo thermal System Co., Ltd. |
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ASS | Succession or assignment of patent right |
Free format text: FORMER OWNER: FUTURE VISION KK Owner name: FUTURE VISION KK Free format text: FORMER OWNER: TOKOKU UNIV. Effective date: 20101119 |
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C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: SENDAI CITY, MIYAGI, JAPAN TO: TOKYO, JAPAN |
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TA01 | Transfer of patent application right |
Effective date of registration: 20101119 Address after: Tokyo, Japan, Japan Applicant after: Future Vision KK Address before: Sendai City, Miyagi Prefecture, Japan Applicant before: Tokoku University of National University Corp. Co-applicant before: Future Vision KK |
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C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
WD01 | Invention patent application deemed withdrawn after publication |
Open date: 20080130 |