JPH0653210A - 半導体装置 - Google Patents
半導体装置Info
- Publication number
- JPH0653210A JPH0653210A JP20142992A JP20142992A JPH0653210A JP H0653210 A JPH0653210 A JP H0653210A JP 20142992 A JP20142992 A JP 20142992A JP 20142992 A JP20142992 A JP 20142992A JP H0653210 A JPH0653210 A JP H0653210A
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- Prior art keywords
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- silicon nitride
- nitride film
- semiconductor device
- metal wiring
- Prior art date
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Abstract
(57)【要約】
【目的】 金属配線を覆うパッシベーション膜の耐湿性
を高め、半導体装置の信頼性を高める。 【構成】 パッシベーション膜をシリコン窒化膜３、シ
リコン酸化膜４およびシリコン窒化膜５からなる三層構
造にする。 【効果】 上層のシリコン窒化膜５を通して入り込んだ
水をその下のシリコン酸化膜４が吸湿しても、下層のシ
リコン窒化膜３がその水から金属配線２を保護する。
を高め、半導体装置の信頼性を高める。 【構成】 パッシベーション膜をシリコン窒化膜３、シ
リコン酸化膜４およびシリコン窒化膜５からなる三層構
造にする。 【効果】 上層のシリコン窒化膜５を通して入り込んだ
水をその下のシリコン酸化膜４が吸湿しても、下層のシ
リコン窒化膜３がその水から金属配線２を保護する。
Description
【０００１】
【産業上の利用分野】本発明は半導体素子の構造に関す
る。特に、金属配線を保護するためのパッシベーション
膜の構造に関する。
る。特に、金属配線を保護するためのパッシベーション
膜の構造に関する。
【０００２】
【従来の技術】図３は従来のパッシベーション膜を用い
た半導体装置の断面図を示す。
た半導体装置の断面図を示す。
【０００３】半導体基板１上には金属配線２が設けら
れ、この金属配線２上に、リンケイ酸膜（以下「ＰＳＧ
膜」という）４とシリコン窒化膜５との二層構造のパッ
シベーション膜が設けられる。ＰＳＧ膜４の厚さは例え
ば５０００オングストロームであり、シリコン窒化膜５
の厚さは例えは７０００オングストロームである。ＰＳ
Ｇ膜４は、常圧気相成長装置（以下「常圧ＣＶＤ装置」
という）により、反応ガスとしてシランＳｉＨ4 、ホス
フィンＰＨ3 および酸素Ｏ2 を用いて形成される。シリ
コン窒化膜５は、プラズマ気相成長装置（以下「プラズ
マＣＶＤ装置」という）により、反応ガスとしてシラン
ＳｉＨ4 およびアンモニアＮＨ3 を用いて形成される。
れ、この金属配線２上に、リンケイ酸膜（以下「ＰＳＧ
膜」という）４とシリコン窒化膜５との二層構造のパッ
シベーション膜が設けられる。ＰＳＧ膜４の厚さは例え
ば５０００オングストロームであり、シリコン窒化膜５
の厚さは例えは７０００オングストロームである。ＰＳ
Ｇ膜４は、常圧気相成長装置（以下「常圧ＣＶＤ装置」
という）により、反応ガスとしてシランＳｉＨ4 、ホス
フィンＰＨ3 および酸素Ｏ2 を用いて形成される。シリ
コン窒化膜５は、プラズマ気相成長装置（以下「プラズ
マＣＶＤ装置」という）により、反応ガスとしてシラン
ＳｉＨ4 およびアンモニアＮＨ3 を用いて形成される。
【０００４】一般にシリコン窒化膜は耐湿性に優れた膜
ではあるが、プラズマＣＶＤにより形成したものは少な
からず水素との結合をもち、耐湿性試験でも少量の水を
通してしまう。また、膜中に存在する小さな孔からも水
を通してしまう。そのため従来は、シリコン窒化膜５の
下層にＰＳＧ膜４を儲け、シリコン窒化膜５を通して入
り込んだ水を吸湿分散させることによって、金属配線２
への局所的な水の蓄積を防止し、耐湿性を高めていた。
ではあるが、プラズマＣＶＤにより形成したものは少な
からず水素との結合をもち、耐湿性試験でも少量の水を
通してしまう。また、膜中に存在する小さな孔からも水
を通してしまう。そのため従来は、シリコン窒化膜５の
下層にＰＳＧ膜４を儲け、シリコン窒化膜５を通して入
り込んだ水を吸湿分散させることによって、金属配線２
への局所的な水の蓄積を防止し、耐湿性を高めていた。
【０００５】
【発明が解決しようとする課題】しかし、この従来のパ
ッシベーション膜構造では、配線が微細化されるにつれ
てシリコン窒化膜のカバレッジが悪化し、耐湿性が不十
分になってきている。このため、例えば高温、高湿雰囲
気における耐湿性試験を行うと、シリコン窒化膜を通し
て入り込んだ水が下層のＰＳＧ膜で吸湿、分散しきれず
に金属配線まで達し、数百時間で不良が発生するなどの
現象が発生していた。
ッシベーション膜構造では、配線が微細化されるにつれ
てシリコン窒化膜のカバレッジが悪化し、耐湿性が不十
分になってきている。このため、例えば高温、高湿雰囲
気における耐湿性試験を行うと、シリコン窒化膜を通し
て入り込んだ水が下層のＰＳＧ膜で吸湿、分散しきれず
に金属配線まで達し、数百時間で不良が発生するなどの
現象が発生していた。
【０００６】本発明は、このような課題を解決し、耐湿
性に優れた信頼性の高い半導体装置を提供することを目
的とする。
性に優れた信頼性の高い半導体装置を提供することを目
的とする。
【０００７】
【課題を解決するための手段】本発明の半導体装置は、
パッシベーション膜として、二層のシリコン窒化膜の間
にシリコン酸化膜が挟まれた三層構造のものを用いたこ
とを特徴とする。
パッシベーション膜として、二層のシリコン窒化膜の間
にシリコン酸化膜が挟まれた三層構造のものを用いたこ
とを特徴とする。
【０００８】シリコン酸化膜には、添加物として、リン
またはホウ素、あるいはその双方を含むことができる。
ヒ素を含んでもよい。
またはホウ素、あるいはその双方を含むことができる。
ヒ素を含んでもよい。
【０００９】
【作用】上層のシリコン窒化膜を通して水が入り込んで
次の層のシリコン酸化膜が吸湿しても、下層のシリコン
窒化膜が金属配線を保護することができる。
次の層のシリコン酸化膜が吸湿しても、下層のシリコン
窒化膜が金属配線を保護することができる。
【００１０】
【実施例】次に本発明の実施例について図面を参照して
説明する。
説明する。
【００１１】図１は本発明の第一実施例を示す断面図で
ある。
ある。
【００１２】この実施例は、半導体基板１またはその基
板上に形成された半導体素子に接して薄膜形成された金
属配線２と、この金属配線２を覆うパッシベーション膜
とを備える。ここで本実施例の特徴とするところは、パ
ッシベーション膜が、二層のシリコン窒化膜３、５の間
にシリコン酸化膜としてのＰＳＧ膜４が挟まれた三層構
造に形成されたことにある。
板上に形成された半導体素子に接して薄膜形成された金
属配線２と、この金属配線２を覆うパッシベーション膜
とを備える。ここで本実施例の特徴とするところは、パ
ッシベーション膜が、二層のシリコン窒化膜３、５の間
にシリコン酸化膜としてのＰＳＧ膜４が挟まれた三層構
造に形成されたことにある。
【００１３】この構造を製造するには、パッシベーショ
ン膜工程において、まず、プラズマＣＶＤ装置により、
金属配線２上に、反応ガスとしてシランＳｉＨ4 、窒素
Ｎ2およびＮＨ3 を用いて、シリコン窒化膜４を約２０
００オングストロームの厚さに堆積させる。次に、常圧
ＣＶＤ装置により、反応ガスとしてシランＳｉＨ4 、酸
素Ｏ2 およびホスフィンＰＨ3 を用いて、リン濃度と４
モル％程度のＰＳＧ膜４を約３０００オングストローム
の厚さに堆積させる。最後に、再びプラズマＣＶＤ装置
により、シリコン窒化膜５を約５０００オングストロー
ムの厚さに堆積させる。
ン膜工程において、まず、プラズマＣＶＤ装置により、
金属配線２上に、反応ガスとしてシランＳｉＨ4 、窒素
Ｎ2およびＮＨ3 を用いて、シリコン窒化膜４を約２０
００オングストロームの厚さに堆積させる。次に、常圧
ＣＶＤ装置により、反応ガスとしてシランＳｉＨ4 、酸
素Ｏ2 およびホスフィンＰＨ3 を用いて、リン濃度と４
モル％程度のＰＳＧ膜４を約３０００オングストローム
の厚さに堆積させる。最後に、再びプラズマＣＶＤ装置
により、シリコン窒化膜５を約５０００オングストロー
ムの厚さに堆積させる。
【００１４】このようなパッシベーション膜を設けた半
導体装置は、上層のシリコン窒化膜５を通して入り込ん
だ水をＰＳＧ膜４が吸湿し、下層のシリコン窒化膜３は
ＰＳＧ膜４が吸湿した水から金属配線２を保護し、ＰＳ
Ｇ膜４の吸湿量が飽和するまで金属配線２に水を通すこ
とがない。このため、図３に示した従来例構造の半導体
装置に比べ、耐湿性試験を行った場合の耐湿性が大きく
改善された。
導体装置は、上層のシリコン窒化膜５を通して入り込ん
だ水をＰＳＧ膜４が吸湿し、下層のシリコン窒化膜３は
ＰＳＧ膜４が吸湿した水から金属配線２を保護し、ＰＳ
Ｇ膜４の吸湿量が飽和するまで金属配線２に水を通すこ
とがない。このため、図３に示した従来例構造の半導体
装置に比べ、耐湿性試験を行った場合の耐湿性が大きく
改善された。
【００１５】この実施例構造の半導体装置と図３に示し
た従来例構造の半導体装置とを比較するため、パッシべ
ーション膜以外は同じ半導体装置について、温度１３０
℃、湿度８５％Ｒｈ、印加電圧５．５Ｖの条件で耐湿性
試験を行った。その結果、従来例構造では２８０時間で
不要が発生したのに対し、本実施例の構造では７２０時
間まで不良は発生しなかった。
た従来例構造の半導体装置とを比較するため、パッシべ
ーション膜以外は同じ半導体装置について、温度１３０
℃、湿度８５％Ｒｈ、印加電圧５．５Ｖの条件で耐湿性
試験を行った。その結果、従来例構造では２８０時間で
不要が発生したのに対し、本実施例の構造では７２０時
間まで不良は発生しなかった。
【００１６】図２は本発明の第二実施例を示す断面図で
ある。
ある。
【００１７】この実施例は、二層のシリコン窒化膜３、
５の間に挟まれるシリコン酸化膜として、オゾンＴＥＯ
Ｓ酸化膜６を用いたことが第一実施例と大きく異なる。
５の間に挟まれるシリコン酸化膜として、オゾンＴＥＯ
Ｓ酸化膜６を用いたことが第一実施例と大きく異なる。
【００１８】この構造を製造するには、まず、第一実施
例と同様に、プラズマＣＶＤ装置により、金属配線２上
にシリコン窒化膜４を約２０００オングストロームの厚
さに堆積させる。次に、常圧ＣＶＤ装置により、反応ガ
スとしてオゾンＯ3 とテトラエトキシシランＴＥＯＳと
を用いて、約５０００オングストロームの厚さの酸化膜
を堆積させる。これがオゾンＴＥＯＳ酸化膜６である。
続いて、再びプラズマＣＶＤ装置により、シリコン窒化
膜５を約５０００オングストロームの厚さに堆積させ
る。
例と同様に、プラズマＣＶＤ装置により、金属配線２上
にシリコン窒化膜４を約２０００オングストロームの厚
さに堆積させる。次に、常圧ＣＶＤ装置により、反応ガ
スとしてオゾンＯ3 とテトラエトキシシランＴＥＯＳと
を用いて、約５０００オングストロームの厚さの酸化膜
を堆積させる。これがオゾンＴＥＯＳ酸化膜６である。
続いて、再びプラズマＣＶＤ装置により、シリコン窒化
膜５を約５０００オングストロームの厚さに堆積させ
る。
【００１９】オゾンＯ3 とテトラエトキシシランＴＥＯ
Ｓとにより酸化膜を形成すると、図２にオゾンＴＥＯＳ
酸化膜６として示したように、フロー形状が得られる。
このため、金属配線２による段差の影響が低減され、同
じ膜厚であって側壁部に厚く膜が解析するため、より耐
湿性が高められる。
Ｓとにより酸化膜を形成すると、図２にオゾンＴＥＯＳ
酸化膜６として示したように、フロー形状が得られる。
このため、金属配線２による段差の影響が低減され、同
じ膜厚であって側壁部に厚く膜が解析するため、より耐
湿性が高められる。
【００２０】第一実施例と同様に、第二実施例による構
造と従来例構造とについて半導体装置の耐湿性試験を行
ったところ、従来例構造では３００時間で不良が発生し
たのに対し、第二実施例による構造では１０００時間ま
で不良が発生せず、信頼性が大きく改善された。ここ
で、従来例構造で不良が発生した時間が第一実施例と比
較した従来例構造の場合と少し異なるが、これは素子の
製造ばらつきと試験のばらつきとに起因する通常の誤差
範囲である。
造と従来例構造とについて半導体装置の耐湿性試験を行
ったところ、従来例構造では３００時間で不良が発生し
たのに対し、第二実施例による構造では１０００時間ま
で不良が発生せず、信頼性が大きく改善された。ここ
で、従来例構造で不良が発生した時間が第一実施例と比
較した従来例構造の場合と少し異なるが、これは素子の
製造ばらつきと試験のばらつきとに起因する通常の誤差
範囲である。
【００２１】
【発明の効果】以上説明したように、本発明の半導体装
置は、パッシベーション膜としてシリコン窒化膜、シリ
コン酸化膜およびシリコン窒化膜からなる三層構造を用
い、上層のシリコン窒化膜を通して入り込んだ水を中層
のシリコン酸化膜が吸湿し、下層のシリコン窒化膜がこ
の吸湿された水から金属配線を保護する。このため、信
頼性が大きく高められる効果がある。
置は、パッシベーション膜としてシリコン窒化膜、シリ
コン酸化膜およびシリコン窒化膜からなる三層構造を用
い、上層のシリコン窒化膜を通して入り込んだ水を中層
のシリコン酸化膜が吸湿し、下層のシリコン窒化膜がこ
の吸湿された水から金属配線を保護する。このため、信
頼性が大きく高められる効果がある。
【図１】本発明の第一実施例を示す断面図。
【図２】本発明の第二実施例を示す断面図。
【図３】従来例構造を示す断面図。
１ 半導体基板 ２ 金属配線 ３、５ シリコン窒化膜 ４ ＰＳＧ膜 ６ オゾンＴＥＯＳ酸化膜
Claims (1)
- 【請求項１】 半導体基板またはその基板上に形成され
た半導体素子に接して薄膜形成された金属配線と、 この金属配線を覆うパッシベーション膜とを備えた半導
体装置において、 上記パッシベーション膜は、二層のシリコン窒化膜の間
にシリコン酸化膜が挟まれた三層構造に形成されたこと
を特徴とする半導体装置。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20142992A JPH0653210A (ja) | 1992-07-28 | 1992-07-28 | 半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20142992A JPH0653210A (ja) | 1992-07-28 | 1992-07-28 | 半導体装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0653210A true JPH0653210A (ja) | 1994-02-25 |
Family
ID=16440943
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20142992A Pending JPH0653210A (ja) | 1992-07-28 | 1992-07-28 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0653210A (ja) |
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|---|---|---|---|---|
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