KR100273261B1 - 반도체 화학기상증착장비의 가스혼합장치 - Google Patents
반도체 화학기상증착장비의 가스혼합장치 Download PDFInfo
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- KR100273261B1 KR100273261B1 KR1019970074703A KR19970074703A KR100273261B1 KR 100273261 B1 KR100273261 B1 KR 100273261B1 KR 1019970074703 A KR1019970074703 A KR 1019970074703A KR 19970074703 A KR19970074703 A KR 19970074703A KR 100273261 B1 KR100273261 B1 KR 100273261B1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45512—Premixing before introduction in the reaction chamber
Abstract
본 발명은 반도체 화학기상증착장비의 가스혼합장치에 관한 것으로, 종래의 가스혼합장치는 충분한 가스혼합이 이루어지지 못하여 증착막의 조성불균일이 발생되는 문제점이 있었다. 본 발명 반도체 화학기상증착장비의 가스혼합장치는 1차혼합부(21)에서 1차적으로 혼합된 혼합가스를 2차혼합부(23)에서 재차혼합할 수 있도록 함으로써, 공정가스의 충분한 혼합이 이루어지게 되어 증착막의 조성불균일이 발생되지 않는 효과가 있다. 그리고, 2차혼합부(23)를 통과하는 혼합가스가 히터밴드(61)및 세퍼레이션 플레이트(24)에 의하여 일정온도로 유지되므로 액화가 방지되어 공정가스의 액화에 의한 웨이퍼의 오염을 방지하게 되는 효과가 있다. 또한, 1차혼합부(21)와 2차혼합부(23)가 분해 또는 결합할 수 있도록 되어 있어서 수리가 용이한 효과가 있다.
Description
본 발명은 반도체 화학기상증착장비(CVD)의 가스혼합장치(GAS MIXER)에 관한 으로, 특히 가스의 혼합능력을 향상시키도록 하는데 적합한 반도체 화학기상증착장비의 가스혼합장치에 관한 것이다.
반도체 웨이퍼 제조공정 중 메모리 셀의 키패시터 유전막을 형성시키기 위한 화학기상증착장리가 도 1에 도시되어 있는 바, 이를 간단히 설명하면 다음과 같다.
도 1은 종래 화학기상증착장비의 구성을 보인 정면도로서, 도시된 바와 같이, 일반적인 화학기상증착장비는 메인 프레임(1)의 상측에 프로세스 챔버(2)가 설치되어 있고, 그 프로세스 챔버(2)의 상측에는 가스혼합장치(3)가 설치되어 있어서, 가스혼합장치(3)에서 혼합된 가스가 프로세스 챔버(2)의 내측으로 주입될 수 있도록 되어 있다.
그리고, 상기 메인 프레임(1)의 주변에는 액체상태의 BST를 공급하기 위한 리퀴드 딜리버리 시스템(4)이 설치되어 있고, 그 리퀴드 딜리버리 시스템(4)에는 기화기(5)가 연결설치되어 있고, 그 기화기(5)는 상기 가스혼합장치(3)의 인렛 포트 중 어느하나에 연결되어 있어서, 액체상태의 BST를 기화기(5)에서 기화시켜서 가스혼합장치(3)로 공급할 수 있도록 되어 있다.
또한, 상기 프로세스 챔버(2)의 일측에는 로드락 챔버(6)가 설치되어 있고, 그 로드락 챔버(6)의 내측에는 로봇(7)이 설치되어 있어서, 로봇(7)이 웨이퍼를 로드락 챔버(6)를 통하여 프로세스 챔버(2)의 내측으로 로딩하거나, 또는 프로세스 챔버(2)에서 공정을 마친 웨이퍼를 언로딩할 수 있도록 되어 있다.
도 2는 상기와 같이 구성되어 있는 종래 화학기상증착장비에 설치되어 있는 가스 혼합장치를 보인 단면도로서, 도시된 바와 같이, 종래 가스혼합장치(3)는 혼합부(11)의 일측에 하나의 인렛 포트(12)가 설치되어 있고, 타측에 아웃렛 포트(13)가 설치되어 있으며, 상기 혼합부(11)의 몸체에 수직방향으로 다른 하나의 인렛 포트(12')가 설치되어 있다.
상기와 같이 구성되어 있는 종래 가스혼합장치(3)는 종류가 서로 다른 공정가스가 혼합부(11)에 설치되어 있는 인렛 포트(12)(12')들을 통하여 혼합부(11)의 내측으로 유입되고, 그 혼합부(11)의 내측으로 유입된 혼합가스는 아웃렛 포트(13)를 통하여 프로세스 챔버(2)의 내측으로 유입되어 웨이퍼의 상면에 증착막을 형성하게 된다.
그러나, 상기와 같이 구성되어 있는 종래 가스혼합장치(3)는 여러 가지 문제점을 가지고 있는 것이었다.
첫 번째로, 상기 혼합부(11)에서는 가스의 혼합이 이루어지나 충분한 혼합이 이루어지지 못하여 웨이퍼에 조성분포가 균일한 증착막을 형성하는 것이 불가능한 문제점이 있었다.
두 번째로, 상기 혼합부(11)에서 혼합된 혼합가스중 일부가 액화되어 프로세스 챔버(2)의 내측에 있는 웨이퍼에 이물질로 작용하는 문제점이 있었다.
세 번째로, 혼합부(11)의 내측이 막히거나 다른 문제가 발생시 분해가 않되기 때문에 수리가 어려운 문제점이 있었다.
본 발명의 주목적은 상기와 같은 여러 문제점을 갖지 않는 반도체 화학기상증착장비의 가스혼합장치를 제공함에 있다.
본 발명의 다른 목적은 공급가스의 충분한 혼합이 이루어지도록 하여 증착막의 조성을 균일하게 형성하는 것을 특징으로 하는 반도체 화학기상증착장비의 가스혼합장치를 제공함에 있다.
본 발명의 또다른 목적은 혼합부에서 혼합된 가스를 가열하여 액화되는 것을 방지하도록 하는데 적합한 반도체 화학기상증착장비의 가스혼합장치를 제공함에 있다.
본 발명의 또다른 목적은 고장발생시 분해가 용이하여 간단하게 수리할 수 있도록 하는데 적합한 반도체 화학기상증착장비의 가스혼합장치를 제공함에 있다.
제1도는 종래 화학기상증착장비의 구성을 보인 정면도.
제2도는 종래 가스혼합장치를 구성을 보인 단면도.
제3도는 본 발명 반도체 화학기상증착장비의 가스혼합장치를 보인 정면도.
제4도는 본 발명 반도체 화학기상증착장비의 가스혼합장치를 보인 평면도.
제5도는 본 발명 반도체 화학기상증착장비의 가스혼합장치를 보인 종단면도.
제6도는 제5도의 A부를 상세히 보인 단면도.
제7도는 본 발명 가스혼합장치의 세퍼레이션 플레이트의 구성을 보인 사시도.
〈도면의 주요부분에 대한 부호의 설명〉
21 : 1차혼합부 22 : 인렛 포트
23 : 2차혼합부 24 : 세퍼레이션 플레이트
25 : 아웃렛 포트 31 : 유출구
32 : 상측벽 33,43 : 외주벽
33a : 암나사부 33b : 지지턱
34,44 : 원통체 41 : 유입구
42 : 하측벽 43a : 플랜지
43a': 받침턱 43b : 수나사부
45 : 리플레이스먼트 실 61 : 히터밴드
M1,M2 : 혼합공간
상기와 같은 본 발명의 목적을 달성하기 위하여 상면에 인렛 포트들이 설치되는 상측벽과 혼합공간이 형성되도록 일체로 형성된 외주벽으로 구성되며 하측으로 유출구가 형성되는 원통체로 되어 인렛 포트들을 통하여 주입된 가스를 1차적으로 혼합하기 위한 1차혼합부와, 그 1차혼합부의 유출구에 결합되는 유입구가 상측에 형성되는 외주벽과 하면에 아웃렛 포트가 설치되는 하측벽이 혼합공간이 형성되도록 일체로 형성되는 원통체의 2차혼합부와, 그 2차혼합부의 내측에 설치되며 다수개의 가스체류판이 지지바에 일정간격으로 고정된 형태로 혼합공간의 내부에 삽입설치되어 혼합된 가스의 체류시간을 연장시키기 위한 세퍼레리션 플레이트를 구비하여서 구성되는 것을 특징으로 하는 반도체 화학기상증착장비의 가스혼합장치가 제공된다.
이하, 상기와 같이 구성되는 본 발명 반도체 화학기상증착장비의 가스혼합장치를 첨부된 도면의 실시예를 참고하여 보다 상세히 설명하면 다음과 같다.
도 3은 본 발명 반도체 화학기상증착장비의 가스혼합장치를 보인 정면도이고, 도 4는 본 발명 반도체 화학기상증착장비의 가스혼합장치를 보인 평면도이며, 도 5는 본 발명 반도체 화학기상증착장비의 가스혼합장치를 보인 종단면도이고, 도 6는 도 6의 A부를 상세히 보인 단면도이며, 도 7는 본 발명 가스혼합장치의 세퍼레이션 플레이트의 구성을 보인 사시도이다.
도시된 바와 같이, 본 발명 반도체 화학기상증착장비의 가스혼합장치는 주입된 가스를 1차적으로 혼합하기 위한 1차혼합부(21)와, 그 1차혼합부(21)의 외측에 설치되며 1차혼합부(21)의 내측으로 공정가스를 공급하기 위한 수개의 인렛 포트(INLET PORT)(22)와, 상기 1차혼합부(21)에 연결설치되며 1차혼합부(21)에서 1차적으로 혼합된 혼합가스가 유입되는 2차혼합부(23)와, 그 2차혼합부(23)의 내측에 설치되어 2차혼합부(23)의 내측으로 유입된 1차혼합된 가스를 균일하게 재차 혼합하기 위한 세퍼레이션 플레이트(SEPERAT10N PLATE)(24)와, 상기 2차혼합부(23)의 측단부에 설치되며 2차혼합부(23)에서 재차혼합된 혼합가스를 프로세스 챔버(PROCESS CHAMBER)(미도시)의 내측으로 유입시키기 위한 아웃렛 포트(OUTLET PORT)(25)로 구성되어 있다.
상기 1차혼합부(21)는 하측으로 유출구(31)가 형성되도록 혼합공간(M1)이 형성되며, 상기 인렛 포트(22)들이 설치되는 상측벽(32)과 외주벽(33)이 일체로 형성된 원통체(34)로 되어 있다.
상기 1차혼합부(21)의 상측벽(32)에 상,하방향으로 관통공(32a)이 형성되어 있고, 외주벽(33)에는 좌,우방향으로 관통공(33a)들이 수개 형성되고, 그 관통공(32a)(33a)에 인렛 포트(22)를 각각 삽입하여 용접으로 고정되어 있다.
상기 2차혼합부(23)는 상기 1차혼합부(21)의 유출구(31)에 결합되는 유입구(41)가 형성되는 혼합공간(M2)이 형성되도록 아웃렛 포트(25)가 설치된 하측벽(42)과, 그 하측벽(42)에 일체로 형성된 외주벽(43)으로 이루어지는 원통체(44)로 되어있다.
상기 2차혼합부(23)의 하측벽(42)에는 관통공(42a)이 형성되어, 그 관통공(42a)에 아웃렛 포트(25)를 삽입하고 용접으로 고정되어 있다.
상기 1차혼합부(21)의 외주벽(33) 하단부 내주면에는 암나사부(33a)가 형성되어 있고, 2차혼합부(23)의 외주벽(43) 상단부에 연장형성된 플랜지(43a)의 외주면에는 수나사부(43b)가 형성되어 있으며, 상기 플랜지(43a)의 내주면에 설치된 받침턱(43a')과 상기 암나사부(33a)의 상단부에 내주면에 설치된 지지턱(33b)의 사이에 리플레이스먼트 실(REPLACEMENT SEAL)(45)을 설치하여, 1차혼합부(21)와 2차혼합부(23)가 착,탈가능하도록 되어 있다.
상기 세퍼레이션 플레이트(24)는 도 7에 도시된 바와 같이, 일측에 컷팅부(51a)가 형성되어 있는 가스체류판(51)이 일정간격을 두고 지그재그로 설치되어 있고, 그 가스체류판(51)의 중앙부를 관통하여 지지바(52)가 설치되어서, 그 관통부에 용접으로 각각의 가스체류판(51)들이 고정되어 있다.
상기 가스체류판(51)들은 일정각도로 경사지도록 설치하여, 혼합가스가 잘흐르도록 한 것을 특징으로 한다.
상기 2차혼합부(23)의 외주벽(43)의 외주면에는 히팅코일이 내설되어 있는 히터밴드(HEATER BAND)(61)가 일정간격으로 감겨져있어서, 2차혼합부(23)의 내부 및 내주면에 접촉되도록 설치되어 있는 상기 세퍼레이션 플레이트(24)를 일정온도로 가열할 수 있도록 되어 있다.
상기와 같이 구성되어 있는 본 발명 반도체 화학기상증착장비의 가스혼합장치에 있어서, 작용을 설명하면 다음과 같다.
상기와 같이 구성되어 있는 본 발명 반도체 화학기상증착장비의 가스혼합장치는 인렛 포트(22)들을 통하여 공정가스가 1차혼합부(21)의 내측에 형성된 혼합공간(M1)의 내부로 유입되는데, 이때 상측벽(32)에 설치되어 있는 인렛 포트(22)와 외주벽(33)에 설치되어 있는 인렛 포트(22)에서 주입되는 가스의 방향은 직교되도록 되어 있어서 1차혼합부(21)의 혼합공간(M1)에서 혼합되게 된다.
그런 다음, 상기와 같이 1차혼합부(21)의 혼합공간(M1)에서 1차적으로 혼합된 1차 혼합가스는 1차혼합부(21)의 유출구(31)를 통하여 2차혼합부(23)의 유입구(41)로 유입되는데, 이와 같이 유입구(41)로 유입된 1차혼합가스는 2차혼합부(23)의 혼합공간(M2) 내부에 설치되어 있는 세퍼레이션 플레이트(24)를 통과하며 2차적으로 혼합되어 아웃렛 포트(25)를 통하여 프로세스 챔버(미도시)의 내측으로 유입된다.
즉, 상기 2차혼합부(23)의 내측에 형성된 혼합공간(M2)의 내부는 히터밴드(61)에 의하여 가열되어 혼합가스가 액화되는 것이 방지되며, 또한 상기 세퍼레션 플레이트(24)는 열전도가 잘되는 금속판인 가스체류판(51)이 2차혼합부(23)의 외주벽(43) 내주면에 밀착되도록 설치되어 있어서, 역시 1차혼합가스의 액화를 방지하게 된다. 그리고, 상기 가스체류판(51)들은 일정방향으로 경사지도록 설치되어 있어서, 1차 혼합가스가 상기 가스체류판(51)들을 통과하며 2차적으로 혼합되게 된다.
상기와 같은 가스혼합장치(70)는 일정기간 반복사용하게 되면 1차혼합부(21) 또는 2차혼합부(23)의 내측이 오염물질에 의하여 오염되어 수리를 요하는 경우가 발생되는데, 이때는 1차혼합부(21)의 외주벽(33)에 형성된 암나사부(33a)에 나사결합되어 있는 2차혼합부(23)의 수나사부(43b)가 해체되도록 2차혼합부(23)를 1차혼합부(21)에서 분리한 다음, 오염물질을 제거하고 다시 조립하여 사용하게 된다.
이상에서 상세히 설명한 바와 같이 본 발명 반도체 화학기상증착장비의 가스혼합장치는 1차혼합부에서 1차적으로 혼합된 혼합가스를 2차혼합부에서 재차혼합할 수 있도록 함으로써, 공정가스의 충분한 혼합이 이루어지게 되어 증착막의 조성불균일이 발생되지 않는 효과가 있다. 그리고, 2차혼합부를 통과하는 혼합가스가 히터밴드 및 세퍼레이션 플레이트에 의하여 일정온도로 유지되므로 액화가 방지되어 공정가스의 액화에 의한 웨이퍼의 오염을 방지하게 되는 효과가 있다. 또한, 1차혼합부와 2차혼합부가 분해 또는 결합할 수 있도록 되어 있어서 수리가 용이한 효과가 있다.
또한, 간단한 조작으로 다른 형태의 세퍼레이션 플레이트로 교체하여 가스체류시간을 조절하는 것이 가능하다.
Claims (5)
- 상면에 인렛 포트들이 설치되는 상측벽과 혼합공간이 형성되도록 일체로 형성된 외주벽으로 구성되며 하측으로 유출구가 형성되는 원통체로 되어 인렛 포트들을 통하여 주입된 가스를 1차적으로 혼합하기 위한 1차혼합부와, 그 1차혼합부의 유출구에 결합되는 유입구가 상측에 형성되는 외주벽과 하면에 아웃렛 포트가 설치되는 하측벽이 혼합공간이 형성되도록 일체로 형성되는 원통체의 2차혼합부와, 그 2차혼합부의 내측에 설치되며 다수개의 가스체류판이 지지바에 일정간격으로 고정된 형태로 혼합공간의 내부에 삽입설치되어 혼합된 가스의 체류시간을 연장시키기 위한 세퍼레이션 플레이트를 구비하여서 구성되는 것을 특징으로 하는 반도체 화학기상증착장비의 가스혼합장치.
- 제1항에 있어서, 상기 인렛 포트는 가스주입방향이 직교되도록 수직방향으로 설치된 것을 특징으로 하는 반도체 화학기상증착장비의 가스혼합장치.
- 제1항에 있어서, 상기 가스체류판들은 일정각도로 경사지도록 설치된 것을 특징으로 하는 반도체 화학기상증착장비의 가스혼합장치.
- 제1항에 있어서, 상기 2차혼합부의 외주벽 외주면에는 히팅코일이 내설된 히터밴드가 일정간격으로 감겨져 있는 것을 특징으로 하는 반도체 화학기상증착장비의 가스혼합장치.
- 제1항에 있어서, 상기 1차혼합부의 외주벽 하단부 내주면에는 암나사부가 형성되어 있고, 2차혼합부의 외주벽 상단부에 연장형성된 플랜지의 외주면에는 수나사부가 형성되어 있으며, 상기 플랜지의 내주면에 설치된 받침턱과 상기 암나사부의 상단부에 내주면에 설치된 지지턱의 사이에 리플레이스먼트 실을 설치하여, 1차혼합부와 2차혼합부가 착,탈가능하도록 구성된 것을 특징으로 하는 반도체 화학기상증착장비의 가스혼합장치.
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| KR19990054826A (ko) | 1999-07-15 |
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