JP5926753B2 - 基板処理方法、プログラム、コンピュータ記憶媒体及び基板処理システム - Google Patents
基板処理方法、プログラム、コンピュータ記憶媒体及び基板処理システム Download PDFInfo
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03D—APPARATUS FOR PROCESSING EXPOSED PHOTOGRAPHIC MATERIALS; ACCESSORIES THEREFOR
- G03D13/00—Processing apparatus or accessories therefor, not covered by groups G11B3/00 - G11B11/00
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/3021—Imagewise removal using liquid means from a wafer supported on a rotating chuck
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/3021—Imagewise removal using liquid means from a wafer supported on a rotating chuck
- G03F7/3028—Imagewise removal using liquid means from a wafer supported on a rotating chuck characterised by means for on-wafer monitoring of the processing
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
- G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67178—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers vertical arrangement
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- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
2 塗布現像処理装置
3 エッチング処理装置
12 露光装置
30 現像装置
31 下部反射防止膜形成装置
32 塗布処理装置
33 上部反射防止膜形成装置
40 熱処理装置
43 紫外線照射装置
120 金属処理部
121 洗浄処理部
122 レジスト膜形成部
142 処理液ノズル
162a 洗浄液ノズル
162b レジスト液ノズル
202、203、204、205 エッチング装置
300 制御装置
400 被処理膜
401 下部反射防止膜
402 レジストパターン
403 凹凸部
404 金属
405 硬化レジストパターン
406 (下部反射防止膜の)パターン
407 (被処理膜の)パターン
W ウェハ
Claims (16)
- 基板上にレジストパターンを形成する基板処理方法であって、
基板上に形成されたレジスト膜に対して露光処理を行い、次いで現像液を供給して現像処理を行うことで、当該基板上にレジストパターンを形成するレジストパターン形成工程と、
その後、前記レジストパターンにエネルギー線を照射して、当該レジストパターンの側鎖を切断する側鎖切断工程と、
前記側鎖が切断されたレジストパターンに処理剤を進入させ、且つ前記レジストパターンに前記処理剤を介して金属を浸潤させる金属処理工程と、
を有し、
前記金属処理工程において、前記処理剤は気体状で基板上に供給されることを特徴とする、基板処理方法。 - 前記処理剤は金属アルコキシド、金属アシレート又は金属キレートの少なくともいずれかであることを特徴とする、請求項1に記載の基板処理方法。
- 基板上にレジストパターンを形成する基板処理方法であって、
基板上に形成されたレジスト膜に対して露光処理を行い、次いで現像液を供給して現像処理を行うことで、当該基板上にレジストパターンを形成するレジストパターン形成工程と、
その後、前記レジストパターンにエネルギー線を照射して、当該レジストパターンの側鎖を切断する側鎖切断工程と、
前記側鎖が切断されたレジストパターンに処理剤を進入させ、且つ前記レジストパターンに前記処理剤を介して金属を浸潤させる金属処理工程と、
を有し、
前記金属処理工程において、基板上に前記処理剤を供給して前記レジストパターンに前記処理剤を進入させた後、前記金属を含有する金属含有剤を基板上に供給して前記レジストパターンに前記金属を浸潤させ、
前記処理剤と前記金属含有剤は、それぞれ気体状で基板上に供給されることを特徴とする、基板処理方法。 - 前記処理剤はアルコールであることを特徴とする、請求項3に記載の基板処理方法。
- 前記エネルギー線は、波長が184nm以下の紫外線、または電子線の少なくともいずれかであることを特徴とする、請求項1〜4のいずれか一項に記載の基板処理方法。
- 前記エネルギー線の照射は、酸素雰囲気中で行われることを特徴とする、請求項1〜5のいずれか一項に記載の基板処理方法。
- 前記金属処理工程において前記レジストパターンに浸潤する前記金属の浸潤量の制御は、少なくとも前記金属処理工程において前記金属を浸潤させる時間、前記金属処理工程における前記処理剤の温度、前記金属処理工程で処理される前記レジストパターン中の溶剤の量、又は前記側鎖切断工程において照射するエネルギー線の照射量を調整して行われることを特徴とする、請求項1〜6のいずれか一項に記載の基板処理方法。
- 請求項1〜7のいずれか一項に記載の基板処理方法を基板処理システムによって実行させるように、当該基板処理システムを制御する制御装置のコンピュータ上で動作するプログラム。
- 請求項8に記載のプログラムを格納した読み取り可能なコンピュータ記憶媒体。
- 基板上にレジストパターンを形成する基板処理システムであって、
露光装置後のレジスト膜に対して現像液を供給して現像処理し、基板上にレジストパターンを形成する現像装置と、
前記レジストパターンにエネルギー線を照射するエネルギー線照射装置と、
前記レジストパターンに処理剤を進入させ、且つ前記レジストパターンに前記処理剤を介して金属を浸潤させる金属処理装置と、を有し、
前記金属処理装置は、前記処理剤を気体状で基板上に供給する処理剤供給部を有することを特徴とする、基板処理システム。 - 前記処理剤は金属アルコキシド、金属アシレート又は金属キレートの少なくともいずれかであることを特徴とする、請求項10に記載の基板処理システム。
- 基板上にレジストパターンを形成する基板処理システムであって、
露光装置後のレジスト膜に対して現像液を供給して現像処理し、基板上にレジストパターンを形成する現像装置と、
前記レジストパターンにエネルギー線を照射するエネルギー線照射装置と、
前記レジストパターンに処理剤を進入させ、且つ前記レジストパターンに前記処理剤を介して金属を浸潤させる金属処理装置と、を有し、
前記金属処理装置は、基板上に前記処理剤を気体状で供給する処理剤供給部と、前記金属を含有する金属含有剤を気体状で基板上に供給する金属含有剤供給部とを有することを特徴とする、基板処理システム。 - 前記処理剤はアルコールであることを特徴とする、請求項12に記載の基板処理システム。
- 前記エネルギー線は、波長が184nm以下の紫外線、または電子線の少なくともいずれかであることを特徴とする、請求項10〜13のいずれか一項に記載の基板処理システム。
- 前記エネルギー線の照射は、酸素雰囲気中で行われることを特徴とする、請求項10〜14のいずれか一項に記載の基板処理システム。
- 少なくとも前記金属処理装置において前記金属を浸潤させる
時間、前記金属処理装置における前記処理剤の温度、前記金属処理装置で処理される前記レジストパターン中の溶剤の量、又は前記エネルギー線照射装置において照射するエネルギー線の照射量を調整して、前記金属処理装置において前記レジストパターンに浸潤する前記金属の浸潤量を制御する制御装置をさらに有することを特徴とする、請求項10〜15のいずれか一項に記載の基板処理システム。
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JP2014034917A JP5926753B2 (ja) | 2014-02-26 | 2014-02-26 | 基板処理方法、プログラム、コンピュータ記憶媒体及び基板処理システム |
US14/619,700 US9690185B2 (en) | 2014-02-26 | 2015-02-11 | Substrate processing method, program, computer-readable storage medium, and substrate processing system |
TW104104813A TWI627489B (zh) | 2014-02-26 | 2015-02-12 | Substrate processing method, program, computer memory medium and substrate processing system |
KR1020150025779A KR102404507B1 (ko) | 2014-02-26 | 2015-02-24 | 기판 처리 방법, 프로그램, 컴퓨터 기억 매체 및 기판 처리 시스템 |
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US20130023129A1 (en) | 2011-07-20 | 2013-01-24 | Asm America, Inc. | Pressure transmitter for a semiconductor processing environment |
US10714315B2 (en) | 2012-10-12 | 2020-07-14 | Asm Ip Holdings B.V. | Semiconductor reaction chamber showerhead |
US20160376700A1 (en) | 2013-02-01 | 2016-12-29 | Asm Ip Holding B.V. | System for treatment of deposition reactor |
US11015245B2 (en) | 2014-03-19 | 2021-05-25 | Asm Ip Holding B.V. | Gas-phase reactor and system having exhaust plenum and components thereof |
US10941490B2 (en) | 2014-10-07 | 2021-03-09 | Asm Ip Holding B.V. | Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same |
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USD980813S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas flow control plate for substrate processing apparatus |
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EP1124158A1 (en) * | 1996-02-26 | 2001-08-16 | Matsushita Electric Industrial Co., Ltd. | Pattern forming material and pattern forming method |
US6017683A (en) * | 1997-02-20 | 2000-01-25 | Matsushita Electric Industrial Co., Ltd. | Pattern forming material and pattern forming method |
JP2000019733A (ja) * | 1998-06-26 | 2000-01-21 | Fuji Photo Film Co Ltd | ポジ型感光性樹脂組成物 |
JP2001332484A (ja) | 2000-05-24 | 2001-11-30 | Toshiba Corp | パターン処理方法 |
WO2002077321A1 (fr) * | 2001-03-26 | 2002-10-03 | Nippon Paint Co.,Ltd. | Procede de formation d'une structure metallique sur un substrat |
JP4700929B2 (ja) * | 2003-06-03 | 2011-06-15 | 信越化学工業株式会社 | 反射防止膜材料、これを用いた反射防止膜及びパターン形成方法 |
JP4565063B2 (ja) * | 2003-11-05 | 2010-10-20 | よこはまティーエルオー株式会社 | 反応現像画像形成法 |
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JP5871844B2 (ja) * | 2013-03-06 | 2016-03-01 | 東京エレクトロン株式会社 | 基板処理方法、プログラム、コンピュータ記憶媒体及び基板処理システム |
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