JP5330004B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76816—Aspects relating to the layout of the pattern or to the size of vias or trenches
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
- H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
Description
以下、NAND型のフラッシュメモリ装置の加工工程に適用した場合の本発明の第1実施形態について図1ないし図17を参照しながら説明する。尚、以下の図面の記載において、同一または類似の部分には同一または類似の符号で表している。但し、図面は模式的なものであり、厚みと平面寸法との関係、各層の厚みの比率等は現実のものとは異なる模式的なものとされている。
図3(a)に示すように、半導体基板2にはその表層にnウェル2aが形成されており、nウェル2aの表層にpウェル2bが形成されており、pウェル2bには素子分離溝3が形成されている。
図3(b)に示すように、メモリセルゲート電極MGが複数Y方向に離間して構成されているが、集積度を向上させるためにはメモリセルゲート電極MGのY方向幅およびY方向間隔を共に微細化する必要がある。そこで本実施形態では、メモリセルゲート電極MGをY方向に複数に分断する場合に、現状のリソグラフィ処理の解像度限界よりも微細なピッチで分断加工して集積度を向上できるようにした実施形態を示す。
図4に示すように、p型の半導体基板2の表層にnウェル2a、pウェル2bを形成し、チャネル形成用の不純物を注入した後、半導体基板2の上面上にゲート絶縁膜5を熱酸化法により所定膜厚形成する。
次に、図17(a)および図17(b)に示すように、シリコン窒化膜10、シリコン層8a、ゲート間絶縁膜7、多結晶シリコン層6をエッチング処理する。この場合、例えばドライエッチング(例えばRIE法による異方性エッチング)により分断すると良い。
(第2実施形態)
図18ないし図21は、本発明の第2実施形態を示すもので、前述実施形態と異なるところは、第1膜として有機材料膜と無機膜との積層構造膜を適用したところにある。前述実施形態と同一部分については同一符号を付して説明を省略し、以下、異なる部分について説明する。
また、カーボン膜14に対して選択性を有する条件下でシリコン酸化膜15を除去処理できるため、エッチング時間を調整することなく上面14aの位置を調整でき、上面14aの位置調整がより容易になる。
図22ないし図24は、本発明の第3実施形態を示すもので、前述実施形態と異なるところは、素子分離溝を形成する場合に適用したところにある。前述実施形態と同一部分については同一符号を付して説明を省略し、以下、異なる部分について説明する。
次に、図24に示すように、非晶質シリコン膜13をマスクとして、シリコン酸化膜17、シリコン窒化膜16、多結晶シリコン層6、ゲート絶縁膜5、半導体基板2の上部を順次異方性エッチングすることで素子分離溝3を形成する。この後の製造方法については本実施形態の特徴には関係しないため説明を省略する。
以上説明したように、本実施形態によれば、素子分離溝3を形成する場合に前述実施形態に係る製造方法を適用しているため、X方向の微細化を図ることができる。
本発明は、上記実施形態に限定されるものではなく、例えば、以下に示す変形または拡張が可能である。
フラッシュメモリ装置1に適用したが、微細化が要求される半導体装置であれば何れのデバイスに適用しても良い。また、前述の第1〜第3の実施形態にて加工の一態様を示したが、層間絶縁膜への溝加工工程、ビット線の形成工程について適用しても良い。
前述した実施形態では、ゲート電極MGの加工工程、素子分離溝3の加工工程に適用した実施形態を示しているが、適用可能な工程については適宜変更することができ、且つ複数の工程に対し前述実施形態で示した側壁転写プロセスを適用しても良い。
Claims (5)
- 被加工膜上に第1膜を形成する第1の工程と、
前記第1膜を細幅のパターンと太幅のスペースパターンにパターニングし前記被加工膜の上面を露出させる第2の工程と、
前記第1膜の上面および側面並びに前記被加工膜の上面に沿って前記第1膜との間でエッチング選択性を有する第2膜を形成する第3の工程と、
前記第2膜をエッチングすることで当該第2膜を前記第1膜の側面に沿って残留させながら前記第1膜の上面および前記被加工膜の上面を露出させる第4の工程と、
前記第2膜に対して選択性を有する条件下で前記第1膜をエッチング処理することで前記第1膜の上端が前記第2膜の上端より低く、且つ、前記第1膜の上端が前記被加工膜の上面よりも高い位置になるように形成する第5の工程と、
前記第1膜をエッチング処理した後、前記被加工膜との間で選択性を有する条件下で、上面の全面が上に凸となる湾曲形状で且つ幅方向ほぼ中央に最高位置の上端が位置するように前記第2膜の上部をエッチング処理する第6の工程と、
前記第2膜の上部をエッチング処理した後、前記第1膜を除去処理する第7の工程と、
前記第1膜を除去処理した後、前記第2膜をマスクとして前記被加工膜をエッチング処理する第8の工程とを備えたことを特徴とする半導体装置の製造方法。 - 前記被加工膜、前記第1膜、前記第2膜として、シリコン膜、シリコン酸化膜、シリコン窒化膜、有機材料膜の何れか互いに異なる膜を割り当てることを特徴とする請求項1記載の半導体装置の製造方法。
- 前記第4の工程、前記第5の工程、前記第6の工程では、それぞれ、ドライエッチング処理を順次実施することを特徴とする請求項1または2記載の半導体装置の製造方法。
- 前記第4の工程、前記第5の工程、前記第6の工程では、RIE(Reactive Ion Etching)法によりエッチング条件を変更して連続的に実施することを特徴とする請求項3記載の半導体装置の製造方法。
- 前記第7の工程では、ウェットエッチング処理により前記第1膜を除去処理することを特徴とする請求項1ないし4の何れかに記載の半導体装置の製造方法。
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JP2009022520A JP5330004B2 (ja) | 2009-02-03 | 2009-02-03 | 半導体装置の製造方法 |
US12/635,024 US7985682B2 (en) | 2009-02-03 | 2009-12-10 | Method of fabricating semiconductor device |
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JP7274616B2 (ja) | 2016-04-04 | 2023-05-16 | ハイアー ディメンション マテリアルズ,インコーポレイティド | 抗微生物性布帛アセンブリ |
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