JP2011199199A - 半導体装置および半導体装置の製造方法。 - Google Patents
半導体装置および半導体装置の製造方法。 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 55
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 29
- 238000000034 method Methods 0.000 title claims abstract description 15
- 238000002955 isolation Methods 0.000 claims description 30
- 230000001590 oxidative effect Effects 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 2
- 239000013256 coordination polymer Substances 0.000 abstract description 32
- 239000010410 layer Substances 0.000 description 19
- 230000004048 modification Effects 0.000 description 19
- 238000012986 modification Methods 0.000 description 19
- 238000003860 storage Methods 0.000 description 11
- 229920001709 polysilazane Polymers 0.000 description 9
- 230000015556 catabolic process Effects 0.000 description 8
- 230000003647 oxidation Effects 0.000 description 8
- 238000007254 oxidation reaction Methods 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 239000012535 impurity Substances 0.000 description 6
- 230000001681 protective effect Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 230000006870 function Effects 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- MFHHXXRRFHXQJZ-UHFFFAOYSA-N NONON Chemical compound NONON MFHHXXRRFHXQJZ-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
- H01L21/76232—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823475—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type interconnection or wiring or contact manufacturing related aspects
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823493—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the wells or tubs, e.g. twin tubs, high energy well implants, buried implanted layers for lateral isolation [BILLI]
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- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
Abstract
【解決手段】ビット線BL方向に延伸した素子領域AAと、素子領域AAの第1の部分上に配置されたコンタクトプラグCPと、素子領域AAの第1の部分とビット線BL方向で隣接する第2の部分上に配置された選択トランジスタSTとを備え、第1の部分の上面領域のビット線BL方向に垂直なワード線WL方向の幅は、第2の部分の上面領域のワード線WL方向の幅よりも狭い。
【選択図】 図1
Description
図1〜図3を用いて、本発明の実施形態に係る半導体装置の基本的な構成を概略的に説明する。図1および図2は、本発明の実施形態に係る半導体装置の基本的な構成を模式的に示した平面図であり、図3は、図1および図2のA―A線に沿った断面図である。
次に、図12〜図14を用いて、本発明の実施形態の変形例1に係る半導体装置の基本的な構成について概略的に説明する。上述した実施形態では、コンタクトプラグCPがワード線WL方向で直線状に配置されている場合について説明した。本変形例1では、コンタクトプラグCPがワード線WL方向でずれて配置されている場合について説明する。なお、基本的な構成および製造方法は、上述した実施形態の構成および製造方法同様である。したがって、上述した実施形態で説明した事項および上述した実施形態から容易に類推可能な事項についての説明は省略する。
次に、図12、図13、および図15を用いて、本発明の実施形態の変形例2に係る半導体装置の基本的な構成について概略的に説明する。本変形例2では、コンタクトプラグCPが突出した素子領域AAを覆っている場合について説明する。なお、基本的な構成および製造方法は、上述した実施形態および変形例1の構成および製造方法同様である。したがって、上述した実施形態および変形例1で説明した事項および上述した実施形態および変形例1から容易に類推可能な事項についての説明は省略する。
CP…コンタクトプラグ
ST…選択トランジスタ
STI…素子分離領域
10a…HTO膜
10b…PSZ膜
20…層間絶縁膜
30…ゲート絶縁膜
40…電荷蓄積層
50…電極間絶縁膜
60…制御ゲート電極
70…保護絶縁膜
80…シリコン酸化膜
100…半導体基板
Claims (5)
- 第1の方向に延伸した素子領域と、
前記素子領域の第1の部分上に配置されたコンタクトプラグと、
前記素子領域の前記第1の部分と前記第1の方向で隣接する第2の部分上に配置されたトランジスタとを備え、
前記第1の部分の上面領域の前記第1の方向に垂直な第2の方向の幅は、前記第2の部分の上面領域の前記第2の方向の幅よりも狭いことを特徴とする半導体装置。 - 前記第2の方向に平行な断面において、前記第1の部分の上面領域はラウンド形状であることを特徴とする請求項1記載の半導体装置。
- 前記コンタクトプラグは、前記第1の部分の上面領域を覆っていることを特徴とする請求項1または2記載の半導体装置。
- 前記第2の方向において、
前記素子領域および素子分離領域が交互に配置されることを特徴とする請求項1乃至3のいずれか一項に記載の半導体装置。 - 第1の方向に延伸し、交互に配置された素子領域および素子分離領域と、前記素子領域上のメモリセルトランジスタ構造と、前記素子領域上の選択トランジスタ構造と、を形成する工程と、
前記素子領域、前記素子分離領域、前記メモリセルトランジスタ構造、および前記選択トランジスタ構造上に絶縁膜を堆積する工程と、
前記絶縁膜の一部分および前記素子分離領域の一部分を除去して、前記素子領域の上部分を露出させる工程と、
前記露出した素子領域の上部分の上面および側面を酸化させる工程と、
を備えることを特徴とする半導体装置の製造方法。
Priority Applications (4)
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JP2010066950A JP5268979B2 (ja) | 2010-03-23 | 2010-03-23 | 半導体装置および半導体装置の製造方法。 |
KR1020100088753A KR101090006B1 (ko) | 2010-03-23 | 2010-09-10 | 반도체 장치 및 반도체 장치의 제조 방법 |
US12/884,764 US8357966B2 (en) | 2010-03-23 | 2010-09-17 | Semiconductor device and method for manufacturing semiconductor device |
US13/713,341 US8624314B2 (en) | 2010-03-23 | 2012-12-13 | Semiconductor device and method for manufacturing semiconductor device |
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JP2010066950A JP5268979B2 (ja) | 2010-03-23 | 2010-03-23 | 半導体装置および半導体装置の製造方法。 |
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JP2011199199A true JP2011199199A (ja) | 2011-10-06 |
JP5268979B2 JP5268979B2 (ja) | 2013-08-21 |
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US (2) | US8357966B2 (ja) |
JP (1) | JP5268979B2 (ja) |
KR (1) | KR101090006B1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9595582B2 (en) | 2014-06-20 | 2017-03-14 | Samsung Electronics Co., Ltd. | Layouts and vertical structures of MOSFET devices |
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JP5606388B2 (ja) * | 2011-05-13 | 2014-10-15 | 株式会社東芝 | パターン形成方法 |
KR102283087B1 (ko) | 2019-07-10 | 2021-07-28 | 넷마블 주식회사 | 복수의 디스플레이를 이용하여 광고를 제공하는 방법 및 그에 따른 보상 지급 방법 |
KR102209379B1 (ko) | 2019-08-20 | 2021-01-29 | 넷마블 주식회사 | 복수의 디스플레이를 이용하여 광고를 제공하는 방법 및 그에 따른 보상 지급 방법 |
KR20210022591A (ko) | 2021-01-25 | 2021-03-03 | 넷마블 주식회사 | 복수의 디스플레이를 이용하여 광고를 제공하는 방법 및 그에 따른 보상 지급 방법 |
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JPH01243574A (ja) * | 1988-03-25 | 1989-09-28 | Toshiba Corp | 半導体装置 |
JPH1064994A (ja) * | 1996-08-23 | 1998-03-06 | Toshiba Corp | 半導体装置 |
JP2001015620A (ja) * | 1999-07-02 | 2001-01-19 | Toshiba Corp | 不揮発性半導体記憶装置及びその製造方法 |
JP2007048446A (ja) * | 2001-09-29 | 2007-02-22 | Toshiba Corp | 半導体集積回路装置 |
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JP2009049441A (ja) * | 2008-12-02 | 2009-03-05 | Toshiba Corp | 半導体集積回路装置の製造方法 |
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JP2009283569A (ja) * | 2008-05-20 | 2009-12-03 | Toshiba Corp | 半導体装置 |
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JP2000138372A (ja) * | 1998-11-02 | 2000-05-16 | Hitachi Ltd | 半導体装置およびその製造方法 |
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JP2005038884A (ja) * | 2003-07-15 | 2005-02-10 | Toshiba Corp | 不揮発性半導体記憶装置及びその製造方法 |
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JP2009043897A (ja) * | 2007-08-08 | 2009-02-26 | Toshiba Corp | 半導体装置およびその製造方法 |
JP2009224425A (ja) * | 2008-03-14 | 2009-10-01 | Renesas Technology Corp | 不揮発性半導体記憶装置の製造方法および不揮発性半導体記憶装置 |
JP2009272565A (ja) * | 2008-05-09 | 2009-11-19 | Toshiba Corp | 半導体記憶装置、及びその製造方法 |
JP5214393B2 (ja) * | 2008-10-08 | 2013-06-19 | 株式会社東芝 | 半導体記憶装置 |
-
2010
- 2010-03-23 JP JP2010066950A patent/JP5268979B2/ja not_active Expired - Fee Related
- 2010-09-10 KR KR1020100088753A patent/KR101090006B1/ko not_active IP Right Cessation
- 2010-09-17 US US12/884,764 patent/US8357966B2/en not_active Expired - Fee Related
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2012
- 2012-12-13 US US13/713,341 patent/US8624314B2/en active Active
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JPH01243574A (ja) * | 1988-03-25 | 1989-09-28 | Toshiba Corp | 半導体装置 |
JPH1064994A (ja) * | 1996-08-23 | 1998-03-06 | Toshiba Corp | 半導体装置 |
JP2001015620A (ja) * | 1999-07-02 | 2001-01-19 | Toshiba Corp | 不揮発性半導体記憶装置及びその製造方法 |
JP2007048446A (ja) * | 2001-09-29 | 2007-02-22 | Toshiba Corp | 半導体集積回路装置 |
JP2008166444A (ja) * | 2006-12-27 | 2008-07-17 | Toshiba Corp | 半導体記憶装置 |
JP2009176936A (ja) * | 2008-01-24 | 2009-08-06 | Toshiba Corp | 半導体装置およびその製造方法 |
JP2009283569A (ja) * | 2008-05-20 | 2009-12-03 | Toshiba Corp | 半導体装置 |
JP2009049441A (ja) * | 2008-12-02 | 2009-03-05 | Toshiba Corp | 半導体集積回路装置の製造方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9595582B2 (en) | 2014-06-20 | 2017-03-14 | Samsung Electronics Co., Ltd. | Layouts and vertical structures of MOSFET devices |
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US20110233622A1 (en) | 2011-09-29 |
US8624314B2 (en) | 2014-01-07 |
KR101090006B1 (ko) | 2011-12-05 |
US20130187208A1 (en) | 2013-07-25 |
US8357966B2 (en) | 2013-01-22 |
JP5268979B2 (ja) | 2013-08-21 |
KR20110106780A (ko) | 2011-09-29 |
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