JP2003133300A - 成膜装置及び成膜方法 - Google Patents

成膜装置及び成膜方法

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Publication number
JP2003133300A
JP2003133300A JP2001329252A JP2001329252A JP2003133300A JP 2003133300 A JP2003133300 A JP 2003133300A JP 2001329252 A JP2001329252 A JP 2001329252A JP 2001329252 A JP2001329252 A JP 2001329252A JP 2003133300 A JP2003133300 A JP 2003133300A
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Japan
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gas
raw material
gas supply
film forming
source
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English (en)
Inventor
Yukio Koike
幸男 小池
Hiroshi Jinriki
博 神力
Kenji Matsumoto
賢治 松本
Koji Senoo
幸治 妹尾
Takashi Magara
敬 真柄
Hironori Yagi
宏憲 八木
Satoshi Taga
敏 多賀
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Abstract

(57)【要約】 【課題】 ガス混合部の大きさを大きく増大せずに原料
ガスを均一に混合し、良質の多元系金属酸化物薄膜を生
成することを課題とする。 【解決手段】ガス混合部10は、ガス供給部16と、ガ
ス供給部から延在してシャワープレート4接続された中
空円筒形状のガス拡散部18とを有する。ガス供給部1
6は二重の中空円筒形状であって、内側に複数種類の原
料ガスが供給される原料ガス供給室16Aが画成され、
その外側に希釈ガスが供給される希釈ガス供給室16B
が画成される。複数種類の原料ガスは原料ガス供給室の
底部からガス拡散部18へと流入し、希釈ガスは希釈ガ
ス供給室16Bの底部からガス拡散室18へと流入す
る。

Description

【発明の詳細な説明】
【0001】
【発明の属する技術分野】本発明は成膜装置及び成膜方
法に係り、特に複数種類の原料ガスを混合した混合ガス
により基体上に多元系金属酸化物薄膜を形成する成膜装
置及び成膜方法に関する。
【0002】
【従来の技術】近年、プレーナスタック型FeRAMの
メモリキャパシタ材としてPZT膜の使用が注目されて
おり、高品質なPZT膜を短時間で生成する技術の開発
が進められている。
【0003】多元系金属酸化物薄膜であるPZT膜は、
Pb(Zr1−xTi)Oのペロブスカイト構造の
結晶膜である。ここで、xは、0≦x≦1の範囲であ
る。PZT膜は、一般に、有機金属材料のガスと酸化剤
として例えばNOとをCVD装置により反応させて基
体上に堆積させることにより生成される。有機金属材料
としては、例えばPb(DPM)、Zr(O−t−B
u)、及びTi(O−i−Pr)が用いられる。ま
た、これら原料ガス及び酸化ガスと共に、希釈用ガスと
して窒素ガス(N)等の不活性ガスが用いられる。
【0004】有機金属材料は気体の状態でCVD装置に
供給されるが、材料そのものとしては室温において固体
又は液体である。したがって、有機金属材料をCVD装
置に供給するためには、有機金属材料を加熱することに
より昇華又は蒸発させて気体に変換する。CVDに用い
られるような有機金属材料の蒸気圧は非常に低い場合が
多い。
【0005】図1はPZT膜を成膜するための従来のC
VD装置の構成を示す簡略図である。図1に示すCVD
装置は、処理チャンバ2内に配置されたウェハW上にP
ZT膜を堆積するための装置である。
【0006】処理チャンバ2内にはウェハWを載置する
ための載置台2aが設けられている。載置台2aにはヒ
ータが埋め込まれており、載置台2aに載置されたウェ
ハWを所定の処理温度に加熱する。処理チャンバ2は排
気ポート2bを介して真空ポンプ(図示せず)に接続さ
れており、真空ポンプにより処理チャンバ2内のガスを
排気して所定の真空度に維持する。
【0007】シャワーヘッド4は、載置台2aに対向し
た状態で処理チャンバ2の上部に設けられており、処理
ガスとして原料ガス及び酸化ガスを混合して処理チャン
バ2内に供給する。
【0008】PZT膜を生成するためには、上述のよう
に、Pb(DPM)(以下Pb原料と称する)のガ
ス、Zr(O−t−Bu)(以下Zr原料と称する)
のガス、及びTi(O−i−Pr)(以下Ti原料と
称する)のガスを混合した混合ガスをシャワーヘッド4
を介して処理チャンバ2内に供給する。ここで、上述の
3種類の原料ガスは、シャワープレート4に供給される
前にガス混合部6に供給されて混合される。この際、原
料ガスを希釈しながら均一に混合するために、希釈ガス
として窒素ガス(N)もガス混合部6に供給される。
【0009】図1に示す従来の成膜装置では、希釈ガス
としてのNガスはガス混合部6の上部から供給され、
Pb,Zr,Ti原料ガスはガス混合部6の側部から個
別に供給される。ガス混合部6に供給されたPb,Z
r,Ti原料ガスは、Nガスの流れ及び拡散効果によ
りガス混合部6内で混合され、混合ガスとなって接続部
を通り、シャワープレート4に供給される。
【0010】シャワープレート4には、混合ガスの他に
酸化ガスとしての(NO)ガスが供給され(図示せ
ず)、ウェハWが配置された処理チャンバ2内に導入さ
れる。これにより、ウェハW上にPZT膜が生成され
る。
【0011】
【発明が解決しようとする課題】図1に示す従来の成膜
装置では、ガス混合部6において原料ガスが混合される
が、ガス混合部6への各原料ガスの供給位置は、ガス混
合部6の周囲であり、各原料ガスの供給位置の影響が混
合状態に現れる。すなわち、ガス混合部6に供給された
各原料ガスは、夫々の供給位置から周囲に拡散して互い
に混合されるのであるが、希釈ガスの流れ方及び原料ガ
ス供給位置の影響により、完全に均一な混合状態にはな
りにくい。
【0012】混合ガスの均一性が悪いと、生成される薄
膜の膜質に影響が現れる。すなわち、ウェハW上に成膜
されるPZT膜の結晶性が損なわれてアモルファス状態
となってしまったり、膜の組成や膜厚が均一とならない
といった問題が生じるおそれがある。
【0013】混合ガスの均一性を改善する一つの対策と
して、ガス混合部を垂直方向に長くして混合ガスの流れ
る通路を長くし、原料ガスの拡散を十分に行うことが考
えられる。しかし、この改善策ではガス混合部が処理チ
ャンバから垂直方向に大きく延在することとなり、成膜
装置全体の大きさが増大してしまう。また、処理チャン
バの上部をメンテナンスなどで開放する場合に、ガス混
合部が邪魔になるといった不都合が生じる。
【0014】本発明は上記の点に鑑みてなされたもので
あり、ガス混合部の大きさを大きく増大せずに原料ガス
を均一に混合し、良質の多元系金属酸化物薄膜を生成す
ることのできる成膜装置及び成膜方法を提供することを
目的とする。
【0015】
【課題を解決するための手段】上記の課題を解決するた
めに本発明では、次に述べる各手段を講じたことを特徴
とするものである。
【0016】請求項1記載の発明は、複数種類の原料ガ
ス及び希釈ガスを混合した混合ガスを基体に供給して基
体上に多元系金属酸化物薄膜を形成する成膜装置であっ
て、前記基体が内部に配置される処理チャンバと、前記
処理チャンバ内に前記混合ガスを導入するシャワーヘッ
ドと、別個に供給された前記複数種類の原料ガス及び前
記希釈ガスを混合して前記シャワーヘッドに供給するガ
ス混合部とを有し、前記ガス混合部は、ガス供給部と、
該ガス供給部から延在して前記シャワープレートに接続
された実質的に中空円筒形状のガス拡散部とを有し、前
記ガス供給部は二重の中空円筒形状であって、内側に前
記複数種類の原料ガスが供給される原料ガス供給室が画
成され、該原料ガス供給室の外側に希釈ガスが供給され
る希釈ガス供給室が画成され、前記複数種類の原料ガス
は前記原料ガス供給室の底部から前記ガス拡散部へと流
入し、前記希釈ガスは前記希釈ガス供給室の底部から前
記ガス拡散室へと流入することを特徴とするものであ
る。
【0017】請求項2記載の発明は、請求項1記載の成
膜装置であって、前記希釈ガスの供給配管は、前記希釈
ガス供給室の側壁接続され、前記希釈ガス供給室の底部
に複数の開口が全体的に配置された仕切り板が設けられ
たことを特徴とするものである。
【0018】請求項3記載の発明は、請求項1又は2記
載の成膜装置であって、前記ガス混合部の前記ガス拡散
部の底部に、酸化ガス供給路が設けられたことを特徴と
するものである。
【0019】請求項4記載の発明は、請求項3記載の成
膜装置であって、前記酸化ガス供給路は、前記ガス拡散
部の底部近傍の側壁を貫通して前記ガス拡散部の底面の
中央部まで延在することを特徴とするものである。
【0020】請求項5記載の発明は、請求項1乃至4の
うちいずれか一項記載の成膜装置であって、前記多元系
金属酸化物薄膜はPZT膜であり、前記複数種類の原料
ガスは、Pb(鉛)元素を含んだPb原料ガスと、Zr
(ジルコニウム)元素を含んだZr原料ガスと、Ti
(チタン)元素を含んだTi原料ガスとを含み、前記希
釈ガスはNガスであることを特徴とするものである。
【0021】請求項6記載の発明は、複数種類の原料ガ
ス及び希釈ガスを混合した混合ガスを基体に供給して基
体上に多元系金属酸化物薄膜を形成する成膜方法であっ
て、実質的に縦長円筒形状のガス混合部の頂部中央付近
に前記複数の原料ガスを個別に供給し、供給された前記
複数種類の原料ガスを包囲するように、前記ガス混合部
の頂部周囲部分に、前記複数の原料ガスの供給方向と同
じ方向に、前記希釈ガスを供給し、前記複数種類の原料
ガスと前記希釈ガスとを、前記ガス混合部を通過させて
拡散効果により均一に混合し、均一に混合した前記複数
の原料ガスと前記希釈ガスとを、シャワープレートを介
して処理チャンバに導入し、処理チャンバ内に配置され
た前記基体上に有機金属薄膜を形成することを特徴とす
るものである。
【0022】請求項7記載の発明は、請求項6記載の成
膜方法であって、前記多元系金属酸化物薄膜はPZT膜
であり、前記複数種類の原料ガスは、Pb(鉛)元素を
含んだPb原料ガスと、Zr(ジルコニウム)元素を含
んだZr原料ガスと、Ti(チタン)元素を含んだTi
原料ガスとを含み、前記希釈ガスはNガスであること
を特徴とするものである。
【0023】請求項8記載の発明、請求項6又は7記載
の成膜方法であって、前記ガス混合部の底部の中央か
ら、酸化ガスをシャワープレートに供給することを特徴
とするものである。
【0024】請求項9記載の発明は、請求項8記載の成
膜方法であって、前記酸化ガスはNOガスであること
をと特徴とするものである。
【0025】上述の発明によれば、複数種類の原料ガス
はガス混合部の中央部分に供給され、その周囲から一様
に希釈ガスが同じ流れ方向に供給される。複数種類の原
料ガスは、シャワーヘッドに到達するまでのガス拡散部
を通過する際に、中央部分から同様の拡散態様で一様に
周囲に向かって拡散する。また、原料ガスの周囲に供給
された希釈ガスも、一様に中央部分に向かって拡散す
る。したがって、原料ガスの供給に偏りがなく、ガス拡
散部の長さが短くても効率的に原料ガスを均一に拡散混
合することができる。この結果、シャワーヘッドに供給
される混合ガスは均一に混合された状態となり、良質の
多元系金属酸化薄膜を基体上に生成することができる。
【発明の実施の形態】次に、本発明の実施の形態につい
て図面と共に説明する。図2は本発明の一実施の形態に
よる成膜装置の概略構成図である。図2において、図1
に示す構成部品と同等な部品には同じ符号を付し、その
説明は適宜省略する。
【0026】図1に示す成膜装置は、処理チャンバ内に
配置されたウェハW上にPZT膜を生成するためのCV
D装置である。本実施の形態では、Pb,Zr,Ti原
料ガスを、希釈ガスであるNガスにより希釈しながら
均一に混合し、シャワーヘッド4に供給する。また、混
合ガスとは別個に酸化ガスとしてNOガスをシャワー
ヘッド4に供給する。シャワーヘッドから処理チャンバ
2内に導入された原料混合ガス及び酸化ガスは、ウェハ
上で反応してウェハW上にPZT膜が生成される。
【0027】Pb,Zr,Ti原料ガスと希釈ガスと
は、ガス混合部10により均一に混合される。ガス混合
部10は、処理チャンバの上方に縦長に延在し、下端部
がシャワーヘッド4に接続される。原料ガスと希釈ガス
は、ガス混合部10の上端部から供給され、ガス混合部
10内を垂直下方に流れる間に拡散混合され、シャワー
ヘッド4に供給される。
【0028】また、混合ガスと同様に酸化ガス(N
)もシャワーヘッド4に供給されるが、酸化ガス
は、ガス混合部の下端部に設けられた酸化ガス供給配管
12から直接シャワーヘッド4に供給される。
【0029】図3はガス混合部10の斜視図である。図
3に示すように、ガス混合部10は実質的に中空円筒形
状であり、上端側にガス供給部16が形成され、ガス供
給部16の下側にガス拡散部18が延在している。
【0030】ガス供給部16は2重円筒形状であり、中
央部分に円筒状の原料ガス供給室16Aが形成され、原
料ガス供給室16Aの周囲にリング状に希釈ガス供給室
16Bが形成される。
【0031】原料ガス供給室16Aには、上方から3種
類の原料ガス(Pb,Zr,Ti)が個別に供給され
る。すなわち、Pb原料ガスを供給するPb原料配管2
0と、Zr原料ガスを供給するZr原料配管22と、T
i原料ガスを供給するTi原料配管24とは、原料ガス
供給室16Aの上部に接続される。原料ガス供給室16
Aの底部はガス拡散部18に開放されており、これら3
種類の原料ガスは、原料ガス供給室16Aを下方に向か
って流れてそのままガス拡散部18内に流入する。
【0032】一方、希釈ガスとしてのNガスを供給す
る希釈ガス配管26は、希釈ガス供給室16Bの側壁に
接続され、リング状の希釈ガス供給室16Bの側部から
ガスを供給する。希釈ガス供給室16Bに流入した
ガスは、希釈ガス供給室16Bの底板28に形成さ
れた多数の開口30から下方に向かってガス拡散部18
へと流入する。希釈ガス供給室16Bはリング状に形成
されているので、Nガスはリング状の底板18の全体
からほぼ均一にガス拡散部18へ流入する。
【0033】したがって、原料ガスは中央部分からガス
拡散部18に下方に向かって流入し、その周囲全体から
原料ガスを包囲するようにNガスが下方に向かってガ
ス拡散部18に流入する。すなわち、ガス拡散部18に
おいて、原料ガスの流れる方向と希釈ガスの流れる方向
は同一である。
【0034】ガス拡散部18は、例えば150mm程度
の長さを有する中空円筒形状であり、その底部は開放さ
れており、図2に示すようにシャワープレート4に接続
される。中央部分から流入したPb,Zr,Ti原料ガ
スは、ガス拡散部18中を下方に向かって流れ、底部に
到達するまでに一様な態様で周囲のNガス中に拡散す
る。一方、原料ガスの周囲から流入したNガスは中央
部分に向かって拡散する。
【0035】このように、原料ガスも希釈ガスも半径方
向への拡散であり、ガス濃度の偏りが生じないため、効
率的に均一な拡散を達成することができる。したがっ
て、ガス拡散部18の垂直方向の長さを短くしながら、
ガス濃度の均一性を達成することができ、均一に混合さ
れた原料ガス及び希釈ガスをシャワープレート4に供給
することができる。これにより、均一な混合ガスが処理
チャンバ2に導入され、ウェハW上に均一な組成のPZ
T膜を均一な膜厚で生成することができる。
【0036】ここで、PZT膜を生成するには、Pb,
Zr,Ti原料ガスの他に酸化ガスとしてNOガスを
処理チャンバ2内に供給する必要がある。本実施の形態
では、ガス拡散部18の底部に酸化ガス供給配管12を
設けて、NOガスをシャワープレート4の中央から供
給する構成としている。
【0037】酸化ガス供給配管12は、ガス拡散部18
の底部付近の側壁を貫通してガス拡散部18内に延在す
る。そして、酸化ガス供給配管12は、ガス拡散部18
内において垂直下方に適度な湾曲をもって曲げられ、そ
の先端部12aはガス拡散部18の底部に達している。
酸化ガス供給配管12を通じて供給されるNOガス
は、直接シャワープレート4の中央部分に供給され、シ
ャワープレート4から処理チャンバ2内に導入される。
したがって、原料ガスと酸化ガスとがガス拡散部18内
で接触して反応することはない。
【0038】ガス拡散部18の底部付近では、原料ガス
とNガスとはかなり均一に拡散混合された状態であ
り、この部分に酸化ガス供給配管12を設けても、原料
ガス及び希釈ガスの拡散にはほとんど影響はない。
【0039】本発明者等は、図3に示す構成のガス混合
部10によりガス濃度の均一性についてコンピュータシ
ミュレーションを行った。図4はそのシミュレーション
結果を示すグラフである。図4のグラフにおいて、縦軸
はガス混合部の水平断面における面内のガス濃度均一性
を表す。また、横軸はガス混合部の底面からの高さ、す
なわち水平断面のガス混合部底面からの垂直方向の距離
を表す。
【0040】シミュレーションでは、中空の円筒形状の
ガス混合部の上端からPb,Zr,Ti原料ガスとN
ガスとを別個に垂直方向に供給するガス混合部(すなわ
ち、図3に示すガス供給部16を有しない構成)による
ガス濃度の均一性について、比較例として検討した。
【0041】図4に示すように、比較例では、ガス出口
までの長さ、すなわちガス混合部の垂直方向の長さが2
80mm程度で均一性は3%程度であった。これに対
し、本発明によるガス混合部を用いた場合、100mm
程度で均一性は3%以内となり、120mm〜130m
m程度では均一性が1%程度に達した。なお、この長さ
は、ガス拡散部18の長さに相当する。
【0042】図3におけるガス供給部16の垂直方向の
寸法を20mm〜30mmとすれば、本実施の形態によ
るガス混合部10の垂直方向の全体の長さを150mm
程度としても十分にガス濃度の均一性を確保することが
できることがわかった。
【発明の効果】上述の如く本発明によれば、原料ガスの
供給に偏りがなく、ガス拡散部の長さが短くても効率的
に原料ガスを均一に拡散混合することができる。この結
果、シャワーヘッドに供給される混合ガスは均一に混合
された状態となり、良質の多元系金属酸化薄膜を基体上
に生成することができる。
【図面の簡単な説明】
【図1】従来の成膜装置の一例を示す概略構成図であ
る。
【図2】本発明の一実施の形態による成膜装置を示す概
略構成図である。
【図3】図2に示すガス混合部の斜視図である。
【図4】ガス濃度の均一性を調べるシミュレーションの
結果を示すグラフである。
【符号の説明】
2 処理チャンバ 2a 載置台 2b 排気口 4 シャワーヘッド 10 ガス混合部 12 酸化ガス供給配管 12a 先端部 16 ガス供給部 16A 原料ガス供給室 16B 希釈ガス供給室 18 ガス拡散室 20 Pb原料ガス供給配管 22 Zr原料ガス供給配管 24 Ti原料ガス供給配管 26 希釈ガス供給配管 28 底板 30 開口
───────────────────────────────────────────────────── フロントページの続き (72)発明者 松本 賢治 東京都港区赤坂五丁目3番6号 TBS放 送センター 東京エレクトロン株式会社内 (72)発明者 妹尾 幸治 東京都港区赤坂五丁目3番6号 TBS放 送センター 東京エレクトロン株式会社内 (72)発明者 真柄 敬 東京都港区赤坂五丁目3番6号 TBS放 送センター 東京エレクトロン株式会社内 (72)発明者 八木 宏憲 東京都港区赤坂五丁目3番6号 TBS放 送センター 東京エレクトロン株式会社内 (72)発明者 多賀 敏 東京都港区赤坂五丁目3番6号 TBS放 送センター 東京エレクトロン株式会社内 Fターム(参考) 4K030 AA11 AA14 BA01 BA18 BA22 EA03 EA06 KA12 5F045 AA04 AB31 AC15 BB02 BB12 DC63 DP03 EE05 EE14 EF05 EF08 5F058 BA06 BA11 BC03 BC20 BF06 BF27 BF29 BG02 BG10 BJ01 5F083 FR01 JA15 PR21

Claims (9)

    【特許請求の範囲】
  1. 【請求項1】 複数種類の原料ガス及び希釈ガスを混合
    した混合ガスを基体に供給して基体上に多元系金属酸化
    物薄膜を形成する成膜装置であって、 前記基体が内部に配置される処理チャンバと、前記処理
    チャンバ内に前記混合ガスを導入するシャワーヘッド
    と、別個に供給された前記複数種類の原料ガス及び前記
    希釈ガスを混合して前記シャワーヘッドに供給するガス
    混合部とを有し、 前記ガス混合部は、ガス供給部と、該ガス供給部から延
    在して前記シャワープレートに接続された実質的に中空
    円筒形状のガス拡散部とを有し、 前記ガス供給部は二重の中空円筒形状であって、内側に
    前記複数種類の原料ガスが供給される原料ガス供給室が
    画成され、該原料ガス供給室の外側に希釈ガスが供給さ
    れる希釈ガス供給室が画成され、前記複数種類の原料ガ
    スは前記原料ガス供給室の底部から前記ガス拡散部へと
    流入し、前記希釈ガスは前記希釈ガス供給室の底部から
    前記ガス拡散室へと流入することを特徴とする成膜装
    置。
  2. 【請求項2】 請求項1記載の成膜装置であって、 前記希釈ガスの供給配管は、前記希釈ガス供給室の側壁
    接続され、前記希釈ガス供給室の底部に複数の開口が全
    体的に配置された仕切り板が設けられたことを特徴とす
    る成膜装置。
  3. 【請求項3】 請求項1又は2記載の成膜装置であっ
    て、 前記ガス混合部の前記ガス拡散部の底部に、酸化ガス供
    給路が設けられたことを特徴とする成膜装置。
  4. 【請求項4】 請求項3記載の成膜装置であって、 前記酸化ガス供給路は、前記ガス拡散部の底部近傍の側
    壁を貫通して前記ガス拡散部の底面の中央部まで延在す
    ることを特徴とする成膜装置。
  5. 【請求項5】 請求項1乃至4のうちいずれか一項記載
    の成膜装置であって、 前記多元系金属酸化物薄膜はPZT膜であり、前記複数
    種類の原料ガスは、Pb(鉛)元素を含んだPb原料ガ
    スと、Zr(ジルコニウム)元素を含んだZr原料ガス
    と、Ti(チタン)元素を含んだTi原料ガスとを含
    み、前記希釈ガスはNガスであることを特徴とする成
    膜装置。
  6. 【請求項6】 複数種類の原料ガス及び希釈ガスを混合
    した混合ガスを基体に供給して基体上に多元系金属酸化
    物薄膜を形成する成膜方法であって、 実質的に縦長円筒形状のガス混合部の頂部中央付近に前
    記複数の原料ガスを個別に供給し、 供給された前記複数種類の原料ガスを包囲するように、
    前記ガス混合部の頂部周囲部分に、前記複数の原料ガス
    の供給方向と同じ方向に、前記希釈ガスを供給し、 前記複数種類の原料ガスと前記希釈ガスとを、前記ガス
    混合部を通過させて拡散効果により均一に混合し、 均一に混合した前記複数の原料ガスと前記希釈ガスと
    を、シャワープレートを介して処理チャンバに導入し、
    処理チャンバ内に配置された前記基体上に有機金属薄膜
    を形成することを特徴とする成膜方法。
  7. 【請求項7】 請求項6記載の成膜方法であって、 前記多元系金属酸化物薄膜はPZT膜であり、前記複数
    種類の原料ガスは、Pb(鉛)元素を含んだPb原料ガ
    スと、Zr(ジルコニウム)元素を含んだZr原料ガス
    と、Ti(チタン)元素を含んだTi原料ガスとを含
    み、前記希釈ガスはNガスであることを特徴とする成
    膜方法。
  8. 【請求項8】 請求項6又は7記載の成膜方法であっ
    て、 前記ガス混合部の底部の中央から、酸化ガスをシャワー
    プレートに供給することを特徴とする成膜方法。
  9. 【請求項9】 請求項8記載の成膜方法であって、 前記酸化ガスはNOガスであることをと特徴とする成
    膜方法。
JP2001329252A 2001-10-26 2001-10-26 成膜装置及び成膜方法 Pending JP2003133300A (ja)

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