JP2015161030A - ガス供給マニホールド及びガス供給マニホールドを使用してチャンバにガスを供給する方法 - Google Patents

ガス供給マニホールド及びガス供給マニホールドを使用してチャンバにガスを供給する方法 Download PDF

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JP2015161030A
JP2015161030A JP2015034774A JP2015034774A JP2015161030A JP 2015161030 A JP2015161030 A JP 2015161030A JP 2015034774 A JP2015034774 A JP 2015034774A JP 2015034774 A JP2015034774 A JP 2015034774A JP 2015161030 A JP2015161030 A JP 2015161030A
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tubular
manifold conduit
supply port
port
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ルシアン シー． イディラ
C Jdira Lucian
ルシアン シー． イディラ
ヘルベルト テルホルスト
Terhorst Herbert
ヘルベルト テルホルスト
マイケル ハルピン
Halpin Michael
マイケル ハルピン
カール ホワイト
White Carl
カール ホワイト
トッド ロバート ダン
Robert Dunn Todd
トッド ロバート ダン
エリック シェロ
Eric Shero
エリック シェロ
メルヴィン バーバス
Verbass Melvin
メルヴィン バーバス
クリストファー ウエスター
Wuester Christopher
クリストファー ウエスター
カイル フォンドゥルリア
Fondurulia Kyle
カイル フォンドゥルリア
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ASM IP Holding BV
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Abstract

【課題】処理チャンバに複数のガスを均一に供給するためのガス供給マニホールド及びガスを供給する方法の提供。
【解決手段】ウェーハ処理リアクタのためのガス注入システム３１は、ウェーハ処理リアクタのガス注入ポートに接続されるように構成される管状ガスマニホールド導管３２と、第１のガスを管状ガスマニホールド導管内に供給するための第１の供給口３３及び第２のガスを管状ガスマニホールド導管内に供給するための第２の供給口を備えるガス供給口３４とを備える。各々の供給口は、管状ガスマニホールド導管の第１の軸位置５１にて管状ガスマニホールド導管に接続される２つ以上の注入ポートを有し、ガス供給口の各々の注入ポートは第１の軸位置にて管状ガスマニホールド導管の円周に沿って均一に分配される。
【選択図】図４

Description

本発明は、概して、ガス供給マニホールド及びガスを供給する方法、特に、処理チャンバに複数のガスを均一に供給するためのガス供給マニホールド及びガスを供給する方法に関する。
半導体ウェーハなどの基板上に膜を堆積させる方法に関して、プラズマエンハンストＡＬＤ（ＰＥＡＬＤ）及び熱ＡＬＤなどの原子層堆積（ＡＬＤ）が周知である。ＡＬＤにおいて、多くの場合、複数のガスが使用されるので、分離ガスラインがＡＬＤリアクタのためのプロセスガスを供給するために必要とされる。各々のガスラインはマニホールド管を介して反応チャンバ（ＲＣ）に接続される。しかしながら、ガスが反応チャンバに入るときにガスは十分に混合されていないので、これらの分離ガスラインはウェーハ上での均一性を不十分にする。反応チャンバの上流のガスの均一性はウェーハ上の膜の面内の均一性に影響を及ぼす。現在、３００ｍｍリアクタ（すなわち、３００ｍｍのウェーハを処理するリアクタ）が一般に使用されているが、ハイスループット及び生産性のために４５０ｍｍリアクタの使用が開始されている。しかしながら、均一性は４５０ｍｍリアクタにおいて悪化する。
関連分野に関係する問題及び解決策の上記のいずれかの説明は、本発明についての関連性を提供する目的のためだけに本開示に含まれ、それらの説明のいずれか又は全ては本発明がなされた時点で知られていたことを認めるものと解釈されるべきではない。
一部の実施形態に係る目的は、反応チャンバ内に入る前に複数のガスの混合を改良するガス混合システムを提供することである。一部の実施形態において、各々のガスのための複数の注入ポートが反応チャンバの上流に設けられる管状ガスマニホールド導管に設けられ、複数の注入ポートは管状ガスマニホールド導管の軸に沿って同じ高さにおいて管状ガスマニホールド導管に接続され、各々のガスは複数の注入ポートに分けられ、管状ガスマニホールド導管の内部で同じ高さに分配される。複数の注入ポートはガスを拡散させるための時間スケールを減少させることができ、それによってガスの混合を改良する。
一部の実施形態において、各々のガスのための複数の注入ポートが反応チャンバの上流に設けられる管状ガスマニホールド導管に設けられ、複数の注入ポートは管状ガスマニホールド導管の軸に対してある角度にて管状ガスマニホールド導管に接続され、その角度は管状ガスマニホールド導管の内部のガスの濃度プロファイルを調整するようにプロセス条件に応じて設定され、それによりガスの混合を改良する。例えば、ガスがリアクタの一方の側からリアクタの他方の側に水平に流れる４５０ｍｍリアクタについてのプロセス条件に関して、ガスは、第１のガス源について約２０°±５°にて、及び第２のガス源について約０°にて管状ガスマニホールド導管内に注入されることができ、ガスがリアクタの周囲に対して上部から垂直かつ放射状に流れる４５０ｍｍリアクタについてのプロセス条件に関して、ガスは約９０°にて管状ガスマニホールド導管内に注入されることができる。
一部の実施形態において、各々のガスのための複数の注入ポートが反応チャンバの上流に設けられる管状ガスマニホールド導管に設けられ、第１のガスのための複数の注入ポート及び第２のガスのための複数の注入ポートは管状ガスマニホールド導管の軸に沿って異なる長さにて管状ガスマニホールド導管に接続され、上側注入ポートは、ポートの角度、ポートの直径などに関して下側注入ポートとは異なって設定され、それによりガスの混合を改良する。
一部の実施形態において、各々のガスのための複数の注入ポートが反応チャンバの上流に設けられる管状ガスマニホールド導管に設けられ、複数の注入ポートはリアクタから離れた距離にて管状ガスマニホールド導管に接続され、その距離は良好な混合のために十分に長い。例えば、４５０ｍｍリアクタについて、注入ポートが設けられる点と、管状ガスマニホールド導管の下端との間の最小長さは約１１５ｍｍであり得る。
一部の実施形態において、各々のガスのための複数の注入ポートが反応チャンバの上流に設けられる管状ガスマニホールド導管に設けられ、最上部注入ポートは管状ガスマニホールド導管の最上部に更に設けられ、最上部注入ポートから流れるガスは制限され、それによりガスの混合を改良する。
本発明の態様及び関連分野に対して達成された利点を要約する目的のために、本発明の特定の目的及び利点が本開示に記載されている。もちろん、全てのこのような目的又は利点は本発明の任意の特定の実施形態に従って達成され得ることを必ずしも必要としないことは理解される。したがって、例えば、当業者は、本明細書に教示又は示唆され得るような他の目的又は利点を必ずしも達成しなくても、本明細書に教示されている１つの利点又は１群の利点を達成又は最適化するように本発明が具現化され得るか又は実施され得ることを認識するであろう。
本発明のさらなる態様、特徴及び利点は以下の詳細な説明から明らかになるであろう。
ここで、本発明のこれら及び他の特徴を好ましい実施形態の図面を参照して記載するが、それらは本発明を例示するためであり、本発明を限定するものではない。図面は例示目的のために非常に簡略化しており、必ずしも縮尺通りではない。
図１は、本発明の実施形態に係るガス混合システムを示す概略図である。 図２は、本発明の別の実施形態に係るガス混合システムを示す概略図である。 図３は、本発明の更に別の実施形態に係るガス混合システムを示す概略図である。 図４は、本発明の実施形態に係る図３に例示したガス混合システムのガス注入ポートを示す概略図である。 図５は、本発明の実施形態に係る図３に例示したガス混合システムの壁におけるガス濃度を表す計算流体力学（ＣＦＤ）シミュレーション（ＡＮＳＹＳ Ｆｌｕｅｎｔ）を使用して得た画像を示し、色は、紫から赤のスケールで、プロセスガス種の濃度に変換されるプロセスガスモル分率の範囲を表し、紫はガス種が存在しないことを表すのに対して、赤は高濃度のガス種を表す。 図６Ａは、計算流体力学（ＣＦＤ）シミュレーションを使用して得た画像を示し、この図は、３つのガス注入ポートが２０°の角度で設けられ、第１の供給口及び第２の供給口の各々が同じ高さに配置されている、本発明の実施形態に係る管状マニホールド導管の下端において得た管状マニホールド導管の断面でのガス濃度を表す。 図６Ｂは、計算流体力学（ＣＦＤ）シミュレーションを使用して得た画像を示し、この図は、５つのガス注入ポートが２０°の角度で設けられ、第１の供給口及び第２の供給口の各々が同じ高さに配置されている、本発明の別の実施形態に係る管状マニホールド導管の下端において得た管状マニホールド導管の断面でのガス濃度を表す。 図７Ａは、計算流体力学（ＣＦＤ）シミュレーションを使用して得た画像を示し、この図は、５つのガス注入ポートが２５°の角度で設けられ、第１の供給口及び第２の供給口の各々が同じ高さに配置されている、本発明の実施形態に係る管状マニホールド導管の下端において得た管状マニホールド導管の断面でのガス濃度を表す。 図７Ｂは、計算流体力学（ＣＦＤ）シミュレーションを使用して得た画像を示し、この図は、５つのガス注入ポートが１５°の角度で設けられ、第１の供給口及び第２の供給口の各々が同じ高さに配置されている、本発明の更に別の実施形態に係る管状マニホールド導管の下端において得た管状マニホールド導管の断面でのガス濃度を表す。 図８Ａは、計算流体力学（ＣＦＤ）シミュレーションを使用して得た画像を示し、この図は、本発明の実施形態に係る図３に例示したものと同様のガス混合システムの壁におけるガス濃度を表し、プロセスガスは、管状ガスマニホールド導管の下側軸位置に配置されるガス注入ポートから導入される。 図８Ｂは、計算流体力学（ＣＦＤ）シミュレーションを使用して得た画像を示し、この図は、図８Ａに例示した実施形態に係る管状マニホールド導管の下端において得た管状マニホールド導管の断面でのガス濃度を表す。 図９Ａは、計算流体力学（ＣＦＤ）シミュレーションを使用して得た画像を示し、この図は、本発明の実施形態に係る図３に例示したものと同様のガス混合システムの壁におけるガス濃度を表し、プロセスガスは、管状ガスマニホールド導管の上側軸位置に配置されるガス注入ポートから導入される。 図９Ｂは、計算流体力学（ＣＦＤ）シミュレーションを使用して得た画像を示し、この図は、図９Ａに例示した実施形態に係る管状マニホールド導管の下端において得た管状マニホールド導管の断面でのガス濃度を表す。 図１０は、計算流体力学（ＣＦＤ）シミュレーションを使用して得た画像を示し、この図は、図９Ａに例示した実施形態に係る管状マニホールド導管の中央で得た管状マニホールド導管の断面でのガス濃度を表す。 図１１Ａは、計算流体力学（ＣＦＤ）シミュレーションを使用して得た画像を示し、この図は、本発明の実施形態に係る螺旋設計を有するものと同様のガス混合システムの壁におけるガス濃度を表し、プロセスガスは、管状ガスマニホールド導管の下側軸位置に配置されるガス注入ポートから導入される。 図１１Ｂは、計算流体力学（ＣＦＤ）シミュレーションを使用して得た画像を示し、この図は、図１１Ａに例示した実施形態に係る管状マニホールド導管の下端において得た管状マニホールド導管の断面でのガス濃度を表す。 図１２Ａは、計算流体力学（ＣＦＤ）シミュレーションを使用して得た画像を示し、この図は、本発明の実施形態に係る管状マニホールド導管の下端において得た、図３に例示したものと同様の管状マニホールド導管の断面でのガス濃度を表し、ドライガスは、管状ガスマニホールド導管の軸方向において０．２４ｓｌｍにて上側注入ポートから管状ガスマニホールド導管内に放出される。 図１２Ｂは、計算流体力学（ＣＦＤ）シミュレーションを使用して得た画像を示し、この図は、本発明の実施形態に係る管状マニホールド導管の下端において得た、図３に例示したものと同様の管状マニホールド導管の断面でのガス濃度を表し、ドライガスは、管状ガスマニホールド導管の軸方向において０．７２ｓｌｍにて上側注入ポートから管状ガスマニホールド導管内に放出される。 図１３は、計算流体力学（ＣＦＤ）シミュレーションを使用して得た画像を示し、この図は、本発明の実施形態に係る管状マニホールド導管の下端において得た、図３に例示したものと同様の管状マニホールド導管の断面でのガス濃度を表し、ドライガスは、０．５４ｓｌｍにて下側ポートから管状ガスマニホールド導管内に放出される。 図１４は、計算流体力学（ＣＦＤ）シミュレーションを使用して画像を示し、この図は、４５０ｍｍ単一ウェーハ処理リアクタのための従来のシャワーヘッドの壁におけるガス濃度を表す。 図１５は、注入ポートから拡散点までの距離を概略的に例示している管状マニホールド導管の断面を示し、（Ａ）注入ポートが内壁に沿って位置し、（Ｂ）注入ポートが中心と内壁との間の途中に位置し、（Ｃ）注入ポートが中心に位置する。 図１６は、プラズマアシスト堆積装置の概略図であり、実施形態に係る管状ガスマニホールド導管はこの装置のプロセスチャンバの中心ガスポートに取り付けられるように構成される。 図１７は、ＵＶアシスト堆積装置の概略図であり、実施形態に係る管状ガスマニホールド導管はこの装置のプロセスチャンバの側部ガスポートに取り付けられるように構成される。
本開示において、「ガス」は、蒸発した固体及び／又は液体を含んでもよく、単一のガス又はガスの混合物により構成されてもよい。同様に、「一つ」の物品は、一つの種類又は複数の種類を含む属を指す。本開示において、管状ガスマニホールド導管を通して反応チャンバに導入されるガスは、プロセスガスを含んでもよく、プロセスガスから実質的に構成されてもよく、又はプロセスガスから構成されてもよく、そのプロセスガスは、前駆体、反応ガス及び添加ガス（例えば、ＮＨ３、ＴｉＣｌ４、Ｏ３）からなる群から選択される少なくとも１つの反応性ガス並びに希釈ガス、パージガス及び搬送（キャリア）ガス（例えば、Ａｒ、Ｈｅ、Ｎｅ、Ｋｒ又はＸｅなどの希ガス、Ｎ２、Ｈ２、Ｏ２などの他の不活性ガス）からなる群から選択される少なくとも１つの不活性ガスであるドライガスである。添加ガスは、反応チャンバにおいて前駆体を酸化、炭化、及び／又は窒化するためのガスを含む。前駆体は搬送ガスと共に導入されてもよい。プロセスガス及びドライガス以外のガス、すなわち、例えば、シールガスを含む、管状ガスマニホールド導管を通さずに導入されるガスが、反応空間をシールするために使用されてもよい。希釈ガス、パージガス、搬送ガス及びシールガスは独立して選択されてもよい。ドライガス及びプロセスガスが管状ガスマニホールド導管内で非反応性であるか、又はわずかに反応性である（反応は最小である）ようにドライガス及びプロセスガスはリアクタの上流の管状ガスマニホールド導管内で混合される。例えば、Ｏ３は分解するが、特定の条件下で、分解率は低く、その存続期間はリアクタ部分に到達するように十分に長いので、Ｏ３がプロセスガスとして使用されてもよい。更に、本開示において、任意の２つの数の変数は、その変数の実行可能な範囲を構成でき、実行可能な範囲は通常作業に基づいて決定でき、示された任意の範囲はエンドポイントを含んでいてもよく、又は除外していてもよい。更に、示された変数の任意の値は、正確な値又はおおよその値を指し、同値を含んでもよく、一部の実施形態において、平均値、中央値、代表値、多数値などを指してもよい。更に、本開示において、反応チャンバには、限定されないが、シングルチャンバ及びデュアルチャンバ、並びに典型的に、特に４５０ｍｍウェーハを処理するためのシングルウェーハ処理チャンバが含まれる。また、装置の寸法を小型化するために、開示されている構成又はその変形が、３００ｍｍウェーハを処理するためのシングルウェーハ処理チャンバ又は任意の他の適切なチャンバに適用されてもよい。
条件及び／又は構造が特定されていない本開示において、当業者は慣用の実験として本開示を考慮してそのような条件及び／又は構造を容易に与えることができる。
開示された実施形態の全てにおいて、実施形態に使用される任意の要素は、意図する目的のために、本明細書に明確に、必然的に又は本質的に開示されているものを含む、その要素と等価の任意の要素と置き換えられてもよい。更に、本発明は装置及び方法に同様に適用されてもよい。
本開示において、任意の定義されている意味は、一部の実施形態において通常及び慣習的な意味を必ずしも排除しているわけではない。
実施形態は好ましい実施形態に関する説明である。しかしながら、本発明は好ましい実施形態に限定されるわけではない。
一部の実施形態において、ウェーハ処理リアクタのためのガス注入システムは、（ｉ）管状ガスマニホールド導管内で混合されたガスをウェーハ処理リアクタに供給するためのウェーハ処理リアクタのガス注入ポートに接続されるように構成される管状ガスマニホールド導管と、（ｉｉ）第１のガスを管状ガスマニホールド導管内に供給するための第１の供給口及び第２のガスを管状ガスマニホールド導管内に供給するための第２の供給口を備えるガス供給口とを備え、各々の供給口は、管状ガスマニホールド導管の第１の軸位置にて管状ガスマニホールド導管に接続される２つ以上の注入ポートを有し、ガス供給口の各々の注入ポートは、第１の軸位置にて管状ガスマニホールド導管の円周に沿って均一に分配される。「均一に分配される」という用語は、円周に沿って実質的に同じ間隔で分配されるか、又は円周に沿った分配の繰り返しパターンを使用して分配されることを指す。管状ガスマニホールド導管は軸を有し、軸位置は、管状ガスマニホールド導管の下端から軸に沿った軸点までの距離によって定義され、軸点を通り、管状ガスマニホールド導管の軸に垂直な平面上の任意の点を含む。第１の軸位置における管状ガスマニホールド導管の円周は管状ガスマニホールド導管の内部に露出される円周である。ガス供給管の各々の注入ポートは第１の軸位置にて円周に沿って均一に分配される。すなわち、各々のガス供給口のポートの中心は実質的に同じ間隔で第１の軸位置にて円周に沿って配置される。ガス供給口はガスラインによって定義される。すなわち、第１のガス供給口及び第２のガス供給口は、各々、独立して、又は異なって制御され得る、異なり、分離したガスラインに接続される。一部の実施形態において、管状ガスマニホールド導管は、ウェーハ処理リアクタのガス注入ポートに直接接続されるように、すなわち、自動圧力調節装置又は質量流制御装置などのフロー制御装置を用いずに接続されるように構成される。一部の実施形態において、注入ポートは管状ガスマニホールド導管に固定して直接接続される。
一部の実施形態において、第１の供給口の注入ポートの数及び第２の供給口の注入ポートの数は同じであり、第１の供給口の注入ポート及び第２の供給口の注入ポートは管状ガスマニホールド導管の円周に沿って交互に配置される。あるいは、第１の供給口の注入ポートの数及び第２の供給口の注入ポートの数は異なる。好ましくは、全ての注入ポートは実質的に同じ間隔で円周に沿って配置される。一部の実施形態において、各々の供給口の注入ポートの数は２〜１０個、好ましくは４〜８個である。
一部の実施形態において、第１の供給口は、第１のガスを注入するための注入口及び第１のガスを流出するための複数の流出口を有するＣ形状の共通チャネルを更に備え、第１のガスを流出するための複数の流出口は、第１の供給口の２つ以上の注入ポートのそれぞれに接続され、第２の供給口は、第２のガスを注入するための注入口及び第２のガスを流出するための複数の流出口を有するＣ形状の共通チャネルを更に備え、第２のガスを流出するための複数の流出口は、第２の供給口の２つ以上の注入ポートのそれぞれに接続される。Ｃ形状の共通チャネルは管状ガスマニホールド導管を取り囲む。一部の実施形態において、第１の供給口のＣ形状の共通チャネル及び第２の供給口のＣ形状の共通チャネルは管状ガスマニホールド導管の軸に垂直な同じ平面上に同軸に配置され、第１の供給口のＣ形状の共通チャネルは第２の供給口のものより大きい直径を有し、第１の供給口のＣ形状の共通チャネルの複数の流出口はＣ形状の共通チャネルの内周に接続されるのに対して、第２の供給口のＣ形状の共通チャネルの複数の流出口はＣ形状の共通チャネルの外周に接続され、第１の供給口及び第２の供給口の両方についての複数の流出口は同じ長さを有してもよく、管状ガスマニホールド導管の軸に対して同じ角度で管状ガスマニホールド導管に接続されてもよい。
あるいは、Ｃ形状は管状ガスマニホールド導管を取り囲む完全な円形であってもよい。
一部の実施形態において、各々の供給口の注入ポートは管状ガスマニホールド導管の軸に対して約０°〜約９０°、好ましくは約０°〜約４５°の角度で管状ガスマニホールド導管に接続される。一部の実施形態において、各々の供給口の注入ポートは管状ガスマニホールド導管の軸に対して約９０°の角度で管状ガスマニホールド導管に接続される。角度は、反応チャンバの型、例えば、シャワーヘッド型（ガスはウェーハの外周に放射状に流れる）又はクロスフロー型（ガスは、ウェーハの片側からウェーハの反対側に流れる）に依存し、また、プロセス条件、ポートの直径、及びマニホールドの直径、及び更に、最上部注入ポートが設けられるか否かに依存する。例えば、角度は、４５０ｍｍウェーハ用のシャワーヘッド型のリアクタ（例えば、ＡＬＤ用で、リアクタの最上部に配置される遠隔プラズマに接続される比較的小さいシャワーヘッドを有するＥｍｅｒＡＬＤ（登録商標））について約１５°〜約２５°、及び例えば、４５０ｍｍウェーハ用の別のシャワーヘッド型のリアクタ（例えば、プラズマエンハンストＡＬＤ用であり、複数の独立したチャンバを有するＥａｇｌｅ（登録商標））について約９０°であってもよい。
一部の実施形態において、管状ガスマニホールド導管は、第１の軸位置の下流における第１の直径、及び第１の軸位置に第２の直径を有し、前記第２の直径は第１の直径より小さいので、注入ポートは、例えば、管状ガスマニホールド導管の軸に対して約０°〜約４５°の角度で管状ガスマニホールド導管に接続され得る。一部の実施形態において、第１の直径（内径）は約１４ｍｍ±５０％であり、第２の直径（内径）は約１０ｍｍ±５０％である。一部の実施形態において、各々の注入ポートの内径（典型的に、複数の流出口の内径と等しい）は約３ｍｍ±５０％である。
一部の実施形態において、第１の供給口はプロセスガス（例えば、有機金属化合物）などの反応性ガスを提供するガス源に接続され、第２の供給口は希ガスなどのドライガスを提供するガス源に接続される。
一部の実施形態において、ガス供給口は下側ガス供給口として機能し、ガス注入システムは更に上側ガス供給口を備え、前記上側ガス供給口は、第３のガスを管状ガスマニホールド導管内に供給するための第３の供給口及び第４のガスを管状ガスマニホールド導管内に供給するための第４の供給口を備え、上側ガス供給口の各々は、管状ガスマニホールド導管の第２の軸位置にて管状ガスマニホールド導管に接続される２つ以上の注入ポートを有し、第２の軸位置は第１の軸位置の上流に配置される。
一部の実施形態において、管状ガスマニホールド導管は、第１の軸位置の下流における第１の直径、第１の軸位置における第２の直径、及び第２の軸位置における第３の直径を有し、前記第３の直径は第２の直径より小さく、第２の直径は第１の直径より小さいので、第３の供給口及び第４の供給口の注入ポートは、例えば、管状ガスマニホールド導管の軸に対して約０°〜約４５°の角度で管状ガスマニホールド導管に接続され得る。一部の実施形態において、第３の直径（内径）は約６ｍｍ±５０％である。
一部の実施形態において、第３の供給口及び第４の供給口の各々の注入ポートは、管状ガスマニホールド導管の軸に対して約０°〜約９０°、好ましくは０°〜約４５°の角度にて管状ガスマニホールド導管に接続される。一部の実施形態において、第３の供給口及び第４の供給口の各々の注入ポートは、（約０°〜約５°の角度にて）管状ガスマニホールド導管の軸に対してほぼ平行に管状ガスマニホールド導管に接続され、第１の供給口及び第２の供給口の各々の注入ポートは、管状ガスマニホールド導管の軸に対して約１５°〜約２５°の角度にて管状ガスマニホールド導管に接続される。一部の実施形態において、第３の供給口及び第４の供給口の注入ポートの数は、２〜１０個、好ましくは４〜８個である。一部の実施形態において、第３の供給口及び第４の供給口の各々の注入ポートの数は、第１の供給口及び第２の供給口の各々の注入ポートの数と等しいか、又はその数より少ない。一部の実施形態において、第１の軸位置と第２の軸位置との間の距離は約３０ｍｍ±５０％である。一部の実施形態において、第１の軸位置と管状ガスマニホールド導管の下端との間の長さは約１１５ｍｍ±５０％である。
一部の実施形態において、第３の供給口は、第３のガスを注入するための注入口及び第３のガスを流出するための複数の流出口を有するＣ形状の共通チャネルを更に備え、第３のガスを流出するための複数の流出口は、第３の供給口の２つ以上の注入ポートのそれぞれに接続され、第４の供給口は、第４のガスを注入するための注入口及び第４のガスを流出するための複数の流出口を有するＣ形状の共通チャネルを更に備え、第４のガスを流出するための複数の流出口は、第４の供給口の２つ以上の注入ポートのそれぞれに接続される。Ｃ形状の共通チャネルは管状ガスマニホールド導管を取り囲む。あるいは、Ｃ形状は管状ガスマニホールド導管を取り囲む完全な円形であってもよい。
一部の実施形態において、ガス注入システムは補助ガスを管状ガスマニホールド導管内に供給するための最上部供給口を更に備え、前記最上部供給口は管状ガスマニホールド導管の上流端部にて管状ガスマニホールド導管に接続される注入ポートを有する。一部の実施形態において、最上部供給口はドライガスを提供するガス源に接続される。一部の実施形態において、最上部供給口の注入ポートの内径は約６ｍｍ±５０％であり、これは他の供給口の注入ポートの内径より大きい。管状ガスマニホールド導管、注入ポートなどは、アルミニウム合金、ステンレス鋼などの任意の適切な材料から作製され得る。
一部の実施形態において、ウェーハ処理リアクタは原子層堆積（ＡＬＤ）用のリアクタ又は化学気相成長（ＣＶＤ）用のリアクタであり、管状ガスマニホールド導管はＡＬＤ又はＣＶＤ用のリアクタのガス注入ポートに接続される。更に、リアクタはエッチング、アニーリングなどのためのリアクタであってもよい。例えば、本明細書に開示されているガス混合システムを使用して、ＡＬＤに関して、ドライガスとプロセスガスの混合が行われてもよく、ＣＶＤに関して、異なるプロセスガスと異なるドライガスの混合が行われてもよい。
一部の実施形態において、管状ガスマニホールド導管は、シャワーヘッド型であるウェーハ処理リアクタのウェーハ収容領域上の中心にガス注入ポートを配置するように構成される。
本発明の別の態様において、本明細書に開示されているガス注入システムのいずれかを使用して混合ガスをウェーハ処理リアクタに供給するための方法は、（ａ）第１の供給口の注入ポートを通して第１のガスを管状ガスマニホールド導管に供給し、第２の供給口の注入ポートを通して第２のガスを管状ガスマニホールド導管に供給し、それにより、第１のガス及び第２のガスを管状ガスマニホールド導管の内部で混合するステップと、（ｂ）リアクタにロードされた基板上に膜を堆積させるために、ガス注入システムを通して混合したガスをウェーハ処理リアクタに供給するステップとを含む。
一部の実施形態において、管状ガスマニホールド導管は、管状ガスマニホールド導管の上流端部にて管状ガスマニホールド導管に接続される注入ポートを有する最上部供給口を更に備え、方法は、いずれか一方がプロセスガスである第１のガス及び第２のガスを管状ガスマニホールド導管に供給しながら、最上部供給口の注入ポートを通して不活性ガスを管状ガスマニホールド導管に供給するステップを更に含む。
一部の実施形態において、膜は第１の条件下で堆積され、方法は、第１の条件下で堆積された膜の均一性と比較して、膜の改良された均一性を有して基板上に漠を堆積させるように、不活性ガスの流量を除いて第１の条件を維持しながら、最上部供給口からの不活性ガスの流量を変化させるステップを更に含む。
一部の実施形態において、ガス供給口は下側ガス供給口として機能し、ガス注入システムは第３の供給口及び第４の供給口を備える上側ガス供給口を更に備え、上側ガス供給口の各々は、管状ガスマニホールド導管の第２の軸位置にて管状ガスマニホールド導管に接続される２つ以上の注入ポートを有し、第２の軸位置は第１の軸位置の上流に配置され、方法は、一方がプロセスガスである第１のガス及び第２のガスを管状ガスマニホールド導管に供給しながら、第３の供給口及び第４の供給口の注入ポートを通して第３のガス及び第４のガスを管状ガスマニホールド導管に供給するステップを更に含む。
一部の実施形態において、第１の供給口の流量は合計で約０．１ｓｌｍ〜約５．０ｓｌｍであり、第２の供給口の流量は合計で約０．１ｓｌｍ〜約５．０ｓｌｍであり、第３の供給口の流量は合計で約０．１ｓｌｍ〜約５．０ｓｌｍであり、第４の供給口の流量は合計で約０．１ｓｌｍ〜約５．０ｓｌｍである。
一部の実施形態において、第１の供給口及び第２の供給口はパルスで供給される（一方で、例えば、堆積の種類に応じて第３の供給口及び第４の供給口は連続して供給される）。プロセス温度が２４℃〜約５００℃の範囲であり得るＡＬＤに関して、１サイクルの時間は約０．０１秒〜約１０．０秒の範囲（例えば、約０．５秒〜約２．０秒）であり得る。
本発明は、本発明を限定することを意図していない図面を参照して詳細に説明される。
図３は、本発明の実施形態に係るガス混合システムを示す概略図である。図４は、本発明の実施形態に係る図３に例示されるガス混合システムのガス注入ポートを示す概略図である。ガス注入システム３１は、ウェーハ処理リアクタのガス注入ポートに接続されるように構成される管状ガスマニホールド導管３２と、第１のガスを供給するための第１の供給口３３と、第２のガスを供給するための第２の供給口３４と、第３のガスを供給するための第３の供給口３５と、第４のガスを供給するための第４の供給口３６と、第５のガスを供給するための最上部供給口３７とを備える。第１の供給口３３は、第１の注入口３３ａ、第１の注入口３３ａが接続される第１のＣ形状の流通チャネル４６、並びに第１の複数の流出口４０ａ、４０ｂ及び４０ｅ（流出口４０ｃ及び４０ｄは管状ガスマニホールド導管３２の裏側にある）を備え、第１の複数の流出口４０ａ、４０ｂ及び４０ｅは、接続点４７ａ、４７ｂ及び４７ｅ（接続点４７ｃ及び４７ｄは管状ガスマニホールド導管３２の裏側にある）のそれぞれを介して第１のＣ形状の流通チャネル４６から延び、第１の軸位置５１にて管状ガスマニホールド導管３２に接続されるそれぞれの第１の複数の流出口４０ａ〜４０ｅの下端にあるそれぞれの第１の注入ポートを介して管状ガスマニホールド導管３２に接続される。
第２の供給口３４は、第２の注入口３４ａ、第２の注入口３４ａが接続される第２のＣ形状の流通チャネル３８、並びに第２の複数の流出口４１ａ及び４１ｅ（流出口４１ｂ、４１ｃ及び４１ｄは管状ガスマニホールド導管３２の裏側にある）を備え、第２の複数の流出口４１ａ及び４１ｅは、接続点４８ａ及び４８ｅ（接続点４８ｂ、４８ｃ及び４８ｄは管状ガスマニホールド導管３２の裏側にある）のそれぞれを介して第２のＣ形状の流通チャネル３８から延び、第１の軸位置５１にて管状ガスマニホールド導管３２に接続されるそれぞれの第２の複数の流出口４１ａ〜４１ｅの下端にあるそれぞれの第２の注入ポートを介して管状ガスマニホールド導管３２に接続される。
第１の複数の流出口４０ａ〜４０ｅ及び第２の複数の流出口４１ａ〜４１ｅは、同じ間隔にて管状ガスマニホールド導管３２の軸周囲に交互に配置される。すなわち、第１の注入ポート及び第２の注入ポートは、第１の軸位置５１にて管状ガスマニホールド導管３２の円周に沿って交互及び均一に分配される。第１のＣ形状の流通チャネル４６及び第２のＣ形状の流通チャネル３８が使用されるので、第１の複数の流出口４０ａ〜４０ｅ及び第２の複数の流出口４１ａ〜４１ｅは、管状ガスマニホールド導管３２の軸に対して同じ角度（約２０°）にて管状ガスマニホールド導管３２に接続される。
第３の供給口３５は、第３の注入口３５ａ、第３の注入口３５ａが接続される第３のＣ形状の流通チャネル４４並びに第３の複数の流出口４２ａ及び４２ｅ（流出口４２ｂ、４２ｃ及び４２ｄは管状ガスマニホールド導管３２の裏側にある）を備え、第３の複数の流出口４２ａ及び４２ｅはそれぞれ第３のＣ形状の流通チャネル４４から延び、それぞれの第３の注入ポートを介して管状ガスマニホールド導管３２に接続され、第３の注入ポートは、第２の軸位置５２にて管状ガスマニホールド導管３２に接続されるそれぞれの第３の複数の流出口４２ａ〜４２ｅの下端にある。
第４の供給口３６は、第４の注入口３６ａ、第４の注入口３６ａが接続される第４のＣ形状の流通チャネル３９並びに第４の複数の流出口４３ａ、４３ｂ及び４３ｅ（流出口４３ｃ及び４３ｄは管状ガスマニホールド導管３２の裏側にある）を備え、第４の複数の流出口４３ａ、４３ｂ及び４３ｅはそれぞれ第４のＣ形状の流通チャネル３９から延び、それぞれの第４の注入ポートを介して管状ガスマニホールド導管３２に接続され、第４の注入ポートは、第２の軸位置５２にて管状ガスマニホールド導管３２に接続されるそれぞれの第４の複数の流出口４３ａ〜４３ｅの下端にある。
第３の複数の流出口４２ａ〜４２ｅ及び第４の複数の流出口４３ａ〜４３ｅは、同じ間隔にて管状ガスマニホールド導管３２の軸周囲に交互に配置される。すなわち、第３の注入ポート及び第４の注入ポートは、第２の軸位置５２にて管状ガスマニホールド導管３２の円周に沿って交互及び均一に分配される。第３のＣ形状の流通チャネル４４及び第４のＣ形状の流通チャネル３９は異なる軸位置に配置されるので、第３の複数の流出口４２ａ〜４２ｅ及び第４の複数の流出口４３ａ〜４３ｅは、同じ角度にて、すなわち管状ガスマニホールド導管３２の軸にほぼ平行に管状ガスマニホールド導管３２に接続される。
最上部注入ポート３７は管状ガスマニホールド導管３２の最上部に接続される。
最上部注入ポート３７の内径は約６ｍｍであり、第１から第４の注入ポートの内径は約３ｍｍであり、第１の軸位置５１の下流の管状ガスマニホールド導管の内径は約１４ｍｍである。第１の軸位置から管状ガスマニホールド導管の下端までの長さは約１１５ｍｍである。
図５は、本発明の実施形態に係る図３に例示したガス混合システムの内壁におけるガス濃度を表す計算流体力学（ＣＦＤ）シミュレーション（ＡＮＳＹＳ Ｆｌｕｅｎｔ）を使用して得た画像を示し、この図５において、色はプロセスガス種の濃度に変換されるプロセスガスモル分率の範囲を表し、紫から赤のスケールにおいて、紫はガス種が存在しないことを表し、一方、赤は高濃度のガス種を表す。この実施形態において、第１の供給口３３、第３の供給口３５、第４の供給口３６及び最上部供給口３７はＡｒを供給するのに対して、第２の供給口３４はプロセスガスを供給し、赤の領域はプロセスガスの高濃度のガス種を示し、紫の領域はプロセスガスのガス種の濃度がないことを示し、緑の領域はプロセスガスの中間濃度のガス種を示す。図５から見られ得るように、プロセスガスの高濃度のガス種を有するガスが、第２のＣ形状の流通チャネルを含む第２の供給口３４の壁に存在する。しかしながら、Ａｒガスの１軸流（最上部供給口３７）及び３つの円周の流れ（第１の供給口３３、第３の供給口３５及び第４の供給口３６）とプロセスガスの１つの円周の流れ（第２の供給口３４）の組み合わせのために、ガスは第１の軸位置のすぐ下流で十分に混合され、次いで十分に混合された希釈されたプロセスガスが、管状ガスマニホールド導管３２の下端を通してウェーハ処理リアクタのガス注入ポートに供給される。
図６Ａは、計算流体力学（ＣＦＤ）シミュレーションを使用して得た画像を示し、この図は、本発明の実施形態に係る管状マニホールド導管の下端（すなわちリアクタ部分の入口）にて得た管状マニホールド導管の断面でのガス濃度を表す。この実施形態において、ガス混合システムは、３つのガス注入ポートが、第１の軸位置にて第１の供給口及び第２の供給口の各々に設けられ、第２の軸位置にて第３の供給口及び第４の供給口の各々に設けられていることを除いて図３及び４に例示した構成を有する。ガスは図５と同じように供給される。図６Ａから見られ得るように、プロセスガスのガス種の濃度は中心において高く、また、第２の供給口についての注入ポートの位置に対応する３つの半径方向において中心から内壁の方向に高く、このことは、各々の供給口についての３つの注入ポートの構成がガス拡散のより長い時間スケールを必要とし得ることを示している。図６Ａの分布図から計算されたガス混合の不均一性は３６．０％である。不均一性（ＮＵ）は以下のように計算される：
ＮＵ＝１００×［１−（（最大信号−最小信号）／（信号の平均値））］
図６Ｂは、計算流体力学（ＣＦＤ）シミュレーションを使用して得た画像を示し、この図は、本発明の実施形態に係る、管状マニホールド導管の下端（すなわちリアクタ部分の入口）にて得た管状マニホールド導管の断面でのガス濃度を表す。この実施形態において、ガス混合システムは図３及び４に例示した構成を有する（５つのガス注入ポートが、第１の軸位置にて第１の供給口及び第２の供給口の各々に設けられ、第２の軸位置にて第３の供給口及び第４の供給口の各々に設けられる）。ガスは図５と同じように供給される。図６Ｂから見られ得るように、プロセスガスのガス種の濃度は中心付近でのみ高く、このことは、各々の供給口についての５つの注入ポートの構成がガス拡散の時間スケールを著しく減少させ得ることを示している。図６Ｂの分布図から計算されたガス混合の不均一性は３．４％である。図６Ａ及び６Ｂから理解され得るように、複数の注入ポートはガス拡散の時間スケールを減少させ得るので、混合を改良する。
図７Ａは、計算流体力学（ＣＦＤ）シミュレーションを使用して得た画像を示し、この図は、本発明の実施形態に係る管状マニホールド導管の下端にて得た管状マニホールド導管の断面でのガス濃度を表す。この実施形態において、ガス混合システムは、第１の供給口及び第２の供給口の各々について、５つのガス注入ポートが、（管状ガスマニホールド導管の軸に対して）２５°の角度で第１の軸位置に設けられることを除いて図３及び４に例示した構成を有する。ガスは図５と同じように供給される。図７Ａから見られ得るように、プロセスガスのガス種の濃度は中心において高いが、プロセスガスのガス種の濃度は内壁に沿って低く、このことは、各々の供給口についての２５°の角度に設定した５つの注入ポートの構成が、ガス拡散の時間スケールを適度に減少させ得ることを示している。図７Ａの分布図から計算したガス混合の不均一性は１０％である。
ガス混合システムが図３及び４に例示した構成を有し、３つのガス注入ポートが第１の軸位置にて第１の供給口及び第２の供給口の各々について２０°の角度で設けられる、注入ポートの角度が２０°である場合の実施形態（ガス混合の不均一性は３．４％である）を示す図６Ｂに戻ると、図７Ａに例示した（ガス混合の不均一性は１０％である）注入ポートの角度が２５°である場合より多くガス拡散は進行する。
図７Ｂは、計算流体力学（ＣＦＤ）シミュレーションを使用して得た画像を示し、この図は、本発明の実施形態に係る管状マニホールド導管の下端において得た管状マニホールド導管の断面でのガス濃度を表す。この実施形態において、ガス混合システムは、第１の供給口及び第２の供給口の各々について、５つのガス注入ポートが、（管状ガスマニホールド導管の軸に対して）１５°の角度で第１の軸位置に設けられることを除いて図３及び４に例示した構成を有する。ガスは図５と同じように供給される。図７Ｂから見られ得るように、プロセスガスのガス種の濃度は、特に注入ポートの位置に実質的に対応する５つのスポットにおいて内壁に沿って高いが、プロセスガスのガス種の濃度は中心において低く、このことは、各々の供給口についての１５°の角度での５つの注入ポートのセットの構成は、ガス拡散の時間スケールを適度に減少させ得ることを示す。図７Ｂの分布図から計算したガス混合の不均一性は９．７％である。
図７Ａ、６Ｂ及び７Ｂから理解され得るように、注入ポートの配向又は角度は、注入ポートに近接する容積の混合に影響を及ぼすことができ、したがって、濃度プロファイルを調整でき、中心における高／低濃度を異なる角度によって設定でき、混合を改良するための所与のプロセス条件についての最適角度が存在する。
ガスの混合は主にガス拡散によって達成され、したがって、拡散が起こる距離を最小化することが必要である。これは、マニホールドの円周にわたって均一に分配された複数の注入ポートが有効であり、それにより円周距離を最小化するためである。更に、ガスを効果的に混合することに関して、拡散が起こる半径方向距離を最小化することが必要である。図１５は、（Ａ）注入ポートが内壁に沿って位置する場合、（Ｂ）注入ポートが中心と内壁との間の途中に位置する場合、及び（Ｃ）注入ポートが中心に位置する場合の注入ポートから拡散点までの距離を概略的に例示する管状マニホールド導管の断面を示す。図面の黒丸１５１は円１５２に対して注入ポートの入口点を表し、円１５２は管状ガスマニホールド導管の円周を表す。（Ａ）、（Ｂ）及び（Ｃ）における拡散の半径方向距離はそれぞれ、Ｒ（半径）、Ｒ／２及びＲである。また、（Ａ）、（Ｂ）及び（Ｃ）における拡散の最大距離はそれぞれ、Ｒ、
、Ｒである。これらの図面において注入ポートの入口点が中心と内壁との間の途中にある場合、拡散の距離は最小であり、したがってガスの混合が改良される。適切な半径方向距離は、ガスがマニホールドに入るガスの速度（ガスの速度は流量、圧力、温度、ガスの種類などのプロセス条件によって決定される）、注入ポートの内壁、マニホールドの軸に対する注入ポートの配向、マニホールドの直径などに依存する。例えば、シャワーヘッド型のリアクタと比較して、プロセス条件、ポートの直径、及びマニホールドの直径は異なり（例えば、シャワーヘッド型のリアクタ：搬送ガス Ｈｅ、圧力 ７００Ｐａ、直径ポート ５ｍｍ、直径マニホールド ２０ｍｍ；別のシャワーヘッド型のリアクタ：搬送ガス Ａｒ、圧力 ４２２Ｐａ、直径ポート ３ｍｍ、直径マニホールド １４ｍｍ）、したがって、ポートの配向は異なって設定される。例えば、注入ポートの角度は、好ましくは、４５０ｍｍウェーハ用のシャワーヘッド型のリアクタ（例えば、ＥｍｅｒＡＬＤ（登録商標））について約１５°〜約２５°であり、４５０ｍｍウェーハ用の別のシャワーヘッド型のリアクタ（例えば、Ｅａｇｌｅ（登録商標））について約９０°である。
図８Ａは、計算流体力学（ＣＦＤ）を使用して得た画像を示し、この図は、本発明の実施形態に係るガス混合システムの壁におけるガス濃度を表し、プロセスガスは管状ガスマニホールド導管の下方軸位置にて２０°の角度で配置されるガス注入ポートから導入される。図８Ｂは、計算流体力学（ＣＦＤ）シミュレーションを使用して得た画像を示し、この図は、図８Ａに例示した実施形態に係る管状マニホールド導管の下端にて得た管状ガスマニホールド導管の断面でのガス濃度を表す。この実施形態において、ガス混合システムは図３及び４に例示したものと同様の構成を有する（Ｃ形状の流通チャネルは省略されている）。ガスは図５と同じように供給される。図８Ａ及び８Ｂから見られ得るように、プロセスガスのガス種の濃度はマニホールドの中心と円周との間で高いが、プロセスガスのガス種の濃度は中心における狭い領域において低く、このことは、この構成がガス拡散の時間スケールを効果的に減少させることができ、ガスの混合を改良することを示している。図８Ｂの分布図から計算したガス混合の不均一性は３．５％である。
図９Ａは、計算流体力学（ＣＦＤ）を使用して得た画像を示し、この図は、本発明の実施形態に係るガス混合システムの壁におけるガス濃度を表し、プロセスガスは管状ガスマニホールド導管の上方軸位置にて０°の角度で配置されるガス注入ポートから導入される。図９Ｂは、計算流体力学（ＣＦＤ）シミュレーションを使用して得た画像を示し、この図は、図９Ａに例示した実施形態に係る管状マニホールド導管の下端にて得た管状マニホールド導管の断面でのガス濃度を表す。この実施形態において、ガス混合システムは図８Ａのものと同じ構成を有するが、プロセスガスは０°の角度にて上方軸位置にて供給される。図９Ａ及び９Ｂから見られ得るように、プロセスガスのガス種の濃度はマニホールドの中心と円周との間で高いが、プロセスガスのガス種の濃度は中心の狭い領域において低く、このことは、この構成がガス拡散の時間スケールを効果的に減少させることができ、ガスの混合を改良することを示している。図９Ｂの分布図から計算されたガス混合の不均一性は２．１％である。
多くのガスラインが必要とされる場合、これは、容易に製造するために管状ガスマニホールド導管の異なる高さ（２つ、３つ又はそれ以上の軸位置）にて注入ポートを配置することによって適合され得る。図８Ａ〜図９Ｂから理解され得るように、注入ポートの構成は軸位置に応じて異なって最適化され得る（例えば、上方軸位置における注入ポートの角度及び直径並びに下方軸位置における注入ポートの角度及び直径は異なって又は別々に最適化され得る）。
図１０は、計算流体力学（ＣＦＤ）シミュレーションを使用して得た画像を示し、この図は、図９Ａに例示した実施形態に係る管状マニホールド導管の中心で得た管状マニホールド導管の断面でのガス濃度を表す。中心点は、（第１の軸位置における）下側注入ポートから５６ｍｍに位置し、管状ガスマニホールド導管の下側注入ポートと下端との間の長さは１１５ｍｍである。図１０から見られ得るように、プロセスガスのガス種の濃度は環において不連続的に変化し、このことは、管状ガスマニホールド導管の注入ポートから底部（すなわち、リアクタの入口）までの最小長さがガスの良好な混合のために存在し、５６ｍｍは、図９Ａ及び９Ｂに例示した１１５ｍｍと比較して十分でないことを示している。図１０の分布図から計算したガス混合の不均一性は１４．８％である。最小長さは主にプロセス条件に依存する。
図１１Ａは、計算流体力学（ＣＦＤ）を使用して得た画像を示し、この図は、本発明の実施形態に係るらせん状設計を有するガス混合システムの壁におけるガス濃度を表し、プロセスガスは管状ガスマニホールド注入口の下方軸位置に配置されるガス注入ポートから導入される。この実施形態において、管状ガスマニホールド導管の下側注入ポートから下端までの長さは管状ガスマニホールド導管のらせん軸に沿って３１５ｍｍであり、管状ガスマニホールド導管の下端からの下側注入ポートの高さは１７０ｍｍ（直線距離）である。更に、注入ポートは９０°の角度で設定される。図１１Ｂは、計算流体力学（ＣＦＤ）シミュレーションを使用して得た画像を示し、この図は、図１１Ａに例示した実施形態に係る管状マニホールド導管の下端にて得た管状マニホールド導管の断面でのガス濃度を表す。図１１Ａ及び１１Ｂから見られ得るように、プロセスガスのガス種の濃度は管状ガスマニホールド導管の一方の側において高く、管状ガスマニホールド導管の他方の側において低く、このことは、らせん設計における注入ポートの構成が混合に対して最低減の影響を与えることを示している。図１１Ｂの分布図から計算されたガス混合の不均一性は５％である。主に管状ガスマニホールド導管の注入ポートから下端（リアクタの入口）までの距離は長いため、比較的良好な均一性が達成される。
図１２Ａ及び１２Ｂは、計算流体力学（ＣＦＤ）シミュレーションを使用して得た画像を示し、この図は、本発明の実施形態に係る管状マニホールド導管の下端にて得た、図３に例示したものと同様の管状マニホールド導管の断面でのガス濃度を表し、プロセス条件は、ドライガス（円周ドライガス）が、管状ガスマニホールド導管の軸方向において、０．６ｓｌｍ（図８Ａ及び８Ｂ）の代わりに、０．２４ｓｌｍ（図１２Ａ）及び０．７２ｓｌｍ（図１２Ｂ）にて上側注入ポートから管状ガスマニホールド導管内に放出されることを除いて、図８Ａ及び８Ｂに例示した画像に使用されるものと同じである。すなわち、図１２Ａについて上側円周ドライガス流は図８Ｂについてのものと比較して６０％減少するのに対して、図１２Ｂについて上側円周ドライガス流は図８Ｂについてのものと比較して２０％増加する。図１２Ａ及び１２Ｂから見られ得るように、上側円周ドライガスが増加する場合、プロセスガスのガス種の濃度は、中心において高く、管状ガスマニホールド導管の円周に沿って低いのに対して、上側円周ドライガスが減少する場合、プロセスガスのガス種の濃度の分布はほぼ反転する。すなわち、プロセスガスのガス種の濃度は、中心において低く、特に上側注入ポートの位置に対応する５つのスポットにおける管状ガスマニホールド導管の円周に沿って高い。図１２Ａの分布図から計算されるガス混合の不均一性は、図８Ｂにおける３．５％と比較して９．１％であり、図１２Ｂの不均一性は１０．９％である。上側円周ドライガス流を調整することによって、ガスの混合は効果的に改良され得る。
図１３は、計算流体力学（ＣＦＤ）シミュレーションを使用して得た画像を示し、この図は、本発明の実施形態に係る管状マニホールド導管の下端において得た、図３に例示したものと同様の管状マニホールド導管の断面でのガス濃度を表し、プロセス条件は、ドライガス（円周ドライガス）が、０．３９ｓｌｍ（図８Ａ及び８Ｂ）の代わりに０．５４ｓｌｍにて２０°の角度で下側注入ポートから管状ガスマニホールド導管内に放出されることを除いて、図８Ａ及び８Ｂに例示した画像に使用されるものと同じである。すなわち、下側円周ドライガス流は図８Ｂについてのものと比較して図１３について約４０％増加する。図１３から見られ得るように、下側円周ドライガスが増加する場合、プロセスガスのガス種の濃度の分布は図８Ｂにおけるものと同様であるが、その分布は注入ポートの位置（それらは高濃度の５つのスポットである）によって多くの影響を受ける。図１３の分布図から計算したガス混合の不均一性は、図８Ｂにおける３．５％と比較して４．６％である。下側円周ドライガス流を調整することによって、ガスの混合は改良され得る。
本明細書に開示される管状ガスマニホールド導管は、ガスの反応チャンバ内への侵入前にガス種を混合するのに非常に効果的である。ガスの混合はシャワーヘッド型リアクタにおいて改良されない。図１４は、計算流体力学（ＣＦＤ）シミュレーションを使用して得た画像を示し、この図は、４５０ｍｍの単一ウェーハ処理リアクタについての従来のシャワーヘッドの壁におけるガス濃度を表す。図１４から見られ得るように、シャワーヘッド１５２において、「左」側のガスは「右」側のガスと交わらず、従って、ガスがシャワーヘッド１５２の上流で混合されず、ガス注入ポート１５１を通してシャワーヘッド１５２に入る場合、ガスの濃度の不均一分布はシャワーヘッドにおいて維持され得る。
上記のように、管状ガスマニホールド導管は、２軸位置にて配置される注入ポート、及び最上部にて配置される最上部注入ポートを有する。しかしながら、管状ガスマニホールド導管は、単一軸位置にのみ配置される少なくとも２つの注入ポート及び最上部に配置される最上部注入ポートを有してもよく、第１のガス種はその軸位置において注入ポートを通して注入されるのに対して、第２のガス種は最上部注入ポートを通して注入される。更に、注入ポートの数を増加させる場合、注入ポートは２つより多い軸位置に配置されてもよい。
図１は本発明の実施形態に係るガス混合システムを示す概略図である。ガス混合システム１は、管状マニホールド導管９、管状ガスマニホールド導管９の上方位置にて管状マニホールド導管９に接続される注入ポート２、３、４、５、６及び７並びに最上部注入ポート８を備える。注入ポート２〜７は、同じ軸位置にて管状ガスマニホールド導管９の円周に沿って同じ間隔で、（管状ガスマニホールド導管の軸に対して）約４５°の角度にて配置される。管状ガスマニホールド導管９はリアクタのガス注入ポートに接続されるように構成される下端１０を有する。最上部注入ポート８は管状ガスマニホールド導管９の軸に平行に配置される。
ドライガスが最上部注入ポート８に供給され、また、注入ポート２、７及び６に供給されるのに対して、プロセスガスが注入ポート３、４及び５に供給される場合、ドライガスは３つの隣接する注入ポートを通過し、プロセスガスは３つの隣接する注入ポートを通過し、計算流体力学（ＣＦＤ）シミュレーションを使用して得られる分布図から管状ガスマニホールド導管の下端において計算されるガス混合の不均一性は２７％である。対照的に、ドライガスが最上部注入ポート８に供給され、また、注入ポート２、６及び４に供給されるのに対して、プロセスガスが注入ポート７、５及び３に供給される場合、ドライガス及びプロセスガスは管状ガスマニホールド導管の円周に沿って交互に注入ポートを通過し、計算流体力学（ＣＦＤ）シミュレーションを使用して得られる分布図から管状ガスマニホールド導管の下端において計算されるガス混合の不均一性は０．４％であり、これは、ドライガス及びプロセスガスが管状ガスマニホールド導管の片側から供給される場合より著しく低い。
図２は、本発明の別の実施形態に係るガス混合システムを示す概略図である。ガス混合システム２１は、管状マニホールド導管２６、並びに管状ガスマニホールド導管の上側位置にて管状ガスマニホールド導管２６に接続される注入ポート２２、２３、２４及び２５を備える。注入ポート２２〜２５は、同じ軸位置にて管状ガスマニホールド導管２６の円周に沿って同じ間隔で、（管状ガスマニホールド導管の軸に対して）約９０°の角度にて配置される。最上部注入ポートは設けられない。管状ガスマニホールド導管２６はリアクタのガス注入ポートに接続されるように構成される下端を有する。
ドライガスが注入ポート２５及び２４に供給され、一方、プロセスガスが注入ポート２３及び２２に供給される場合、ドライガスは２つの隣接する注入ポートを通過し、プロセスガスは２つの隣接する注入ポートを通過し、計算流体力学（ＣＦＤ）シミュレーションを使用して得られる分布図から管状ガスマニホールド導管の下端において計算されるガス混合の不均一性は６．２％である。対照的に、ドライガスが注入ポート２４及び２２に供給され、一方、プロセスガスが注入ポート２５及び２３に供給される場合、ドライガス及びプロセスガスは管状ガスマニホールド導管の円周に沿って交互に注入ポートを通過し、計算流体力学（ＣＦＤ）シミュレーションを使用して得られる分布図から管状ガスマニホールド導管の下端において計算されるガス混合の不均一性は０．９％であり、これは、ドライガス及びプロセスガスが管状ガスマニホールド導管の片側から供給される場合より著しく低い。
本明細書に開示されるガス混合システムは、ガスの反応チャンバ内への侵入前に２つ以上のガスを混合することを必要とする任意の適切な反応チャンバに接続されてもよい。図１６はプラズマアシスト堆積装置の概略図であり、実施形態に係る管状ガスマニホールド導管は装置のプロセスチャンバの中心ガスポートに取り付けられるように構成される。例えば、このシャワーヘッド型リアクタは、反応チャンバ２４３（基板２４１は下側電極２４２の上部に配置される）の内部２５１において平行に配置され、互いに対向する一対の導電性平板電極２４２、２４４を含む反応チャンバ２４３、管状ガスマニホールド導管を受け入れるための反応チャンバ２４３の上部に設けられるガス注入ポート２００及びリアクタチャンバ２４３の内部２５１からガスを排出するための排気管２４６を備える。装置は更に、ＨＲＦパワー及びＬＲＦパワーをそれぞれ上側電極２４４に印加するためのＲＦパワー源２４５、２９０を備える。下側電極２４２は電気的に接地される２５２。シールガスを反応チャンバ２４３の内部２５１に導入するためのシールガス流制御装置２６４もまた、反応チャンバ２４３に設けられる。上側電極２４４は同様にシャワーヘッドとして機能する。本明細書に開示されるガス混合システムの管状ガスマニホールド導管は、ガス注入ポート２００に取り付けられ、上側電極２４４に接続され、均一に混合されたプロセスガスが管状ガスマニホールド注入口から反応チャンバ２４３内に導入される。
図１７はＵＶアシスト堆積装置の概略図であり、実施形態に係る管状ガスマニホールド導管は装置のプロセスチャンバの側部ガスポートに取り付けられるように構成される。例えば、このクロスフロー型リアクタは、反応チャンバ１７９、反応チャンバ１７９の一方の側の側面に設けられる注入フランジ１７１、反応チャンバ１７９の他方の側の側面に設けられる排気フランジ１７２、基板１７６が配置されるサセプタ１７７、ＵＶ光を発するための下側ランプアレイ１７３、ＵＶ光を発するための上側ランプアレイ１７４、内部１８０を画定するためにサセプタ１７７と上側ランプアレイ１７４との間に配置されるウインドウガラス１７５、及び本明細書に開示されるガス混合システムの管状ガスマニホールド導管を取り付けるための注入フランジ１７１に設けられるガス注入ポート１７８を備える。プロセスガスは、注入フランジ１７１を通してガス混合システムから反応チャンバ１７９の内部１８０に導入され、反応チャンバの横方向に流れ、排気フランジ１７２を通して放出される。基板１７６は下側ランプアレイ１７３及び上側ランプアレイ１７４から発せられるＵＶ光により照射される。
上記において、当業者は、装置が、本明細書のいずれかの場所に記載されている堆積及びリアクタ洗浄プロセスを行うようにプログラムされるか又は構成される１つ又は複数の制御装置（図示せず）を含むことを理解するであろう。同様に当業者によって理解されるように、制御装置は、種々のパワー源、加熱システム、ポンプ、ロボット及びガス流制御装置又はリアクタのバルブと通信される。
複数の及び様々な変更が本発明の精神から逸脱せずになされ得ることは当業者により理解されるであろう。したがって、本発明の形態は例示のみであり、本発明の範囲を限定することを意図するわけではないことが明確に理解されるべきである。

Claims (20)

  1. ウェーハ処理リアクタのためのガス注入システムであって、
    管状ガスマニホールド導管内で混合されたガスをウェーハ処理リアクタに供給するための前記ウェーハ処理リアクタのガス注入ポートに接続されるように構成される管状ガスマニホールド導管と、
    第１のガスを前記管状ガスマニホールド導管内に供給するための第１の供給口及び第２のガスを前記管状ガスマニホールド導管内に供給するための第２の供給口を備え、各々の供給口が、前記管状ガスマニホールド導管の第１の軸位置にて前記管状ガスマニホールド導管に接続される２つ以上の注入ポートを有する、ガス供給口と、
    を備え、
    前記ガス供給口の各々の注入ポートは、前記第１の軸位置にて前記管状ガスマニホールド導管の円周に沿って均一に分配される、ガス注入システム。
  2. 前記第１の供給口の注入ポートの数及び前記第２の供給口の注入ポートの数は同じであり、前記第１の供給口の注入ポート及び前記第２の供給口の注入ポートは前記管状ガスマニホールド導管の円周に沿って交互に配置される、請求項１に記載のガス注入システム。
  3. 前記第１の供給口は、前記第１のガスを注入するための注入口及び前記第１のガスを流出するための複数の流出口を有するＣ形状の共通チャネルを更に備え、前記第１のガスを流出するための複数の流出口は、前記第１の供給口の２つ以上の注入ポートのそれぞれに接続され、前記第２の供給口は、前記第２のガスを注入するための注入口及び前記第２のガスを流出するための複数の流出口を有するＣ形状の共通チャネルを更に備え、前記第２のガスを流出するための複数の流出口は、前記第２の供給口の２つ以上の注入ポートのそれぞれに接続される、請求項１に記載のガス注入システム。
  4. 各々の供給口の前記注入ポートは、前記管状ガスマニホールド導管の軸に対して約０°〜約４５°の角度にて前記管状ガスマニホールド導管に接続される、請求項１に記載のガス注入システム。
  5. 各々の供給口の前記注入ポートは、前記管状ガスマニホールド導管の軸に対して約９０°の角度にて前記管状ガスマニホールド導管に接続される、請求項１に記載のガス注入システム。
  6. 前記管状ガスマニホールド導管は、前記第１の軸位置の下流における第１の直径、及び前記第１の軸位置における第２の直径を有し、前記第２の直径は前記第１の直径より小さい、請求項１に記載のガス注入システム。
  7. 前記第１の供給口は反応ガスを提供するガス源に接続され、前記第２の供給口は不活性ガスを提供するガス源に接続される、請求項１に記載のガス注入システム。
  8. 前記ガス供給口は下側ガス供給口として機能し、前記ガス注入システムは上側ガス供給口を更に備え、前記上側ガス供給口は、第３のガスを前記管状ガスマニホールド導管内に供給するための第３の供給口及び第４のガスを前記管状ガスマニホールド導管内に供給するための第４の供給口を備え、前記上側ガス供給口の各々は、前記管状ガスマニホールド導管の第２の軸位置にて前記管状ガスマニホールド導管に接続される２つ以上の注入ポートを有し、前記第２の軸位置は前記第１の軸位置の上流に配置される、請求項１に記載のガス注入システム。
  9. 前記管状ガスマニホールド導管は、前記第１の軸位置の下流における第１の直径、前記第１の軸位置における第２の直径、及び前記第２の軸位置における第３の直径を有し、前記第３の直径は前記第２の直径より小さく、前記第２の直径は前記第１の直径より小さい、請求項８に記載のガス注入システム。
  10. 前記第３の供給口は、前記第３のガスを注入するための注入口及び前記第３のガスを流出するための複数の流出口を有するＣ形状の共通チャネルを更に備え、前記第３のガスを流出するための複数の流出口は、前記第３の供給口の２つ以上の注入ポートのそれぞれに接続され、前記第４の供給口は、前記第４のガスを注入するための注入口及び前記第４のガスを流出するための複数の流出口を有するＣ形状の共通チャネルを更に備え、前記第４のガスを流出するための複数の流出口は、前記第４の供給口の２つ以上の注入ポートのそれぞれに接続される、請求項８に記載のガス注入システム。
  11. 前記第３の供給口及び前記第４の供給口の各々の前記注入ポートは、前記管状ガスマニホールド導管の軸に対して約０°〜約４５°の角度にて前記管状ガスマニホールド導管に接続される、請求項８に記載のガス注入システム。
  12. 前記第３の供給口及び前記第４の供給口の各々の前記注入ポートは、前記管状ガスマニホールド導管の軸に対してほぼ平行に前記管状ガスマニホールド導管に接続され、前記第１の供給口及び前記第２の供給口の各々の前記注入ポートは、前記管状ガスマニホールド導管の軸に対して約１５°〜約２５°の角度にて前記管状ガスマニホールド導管に接続される、請求項１１に記載のガス注入システム。
  13. 補助ガスを前記管状ガスマニホールド導管内に供給するための最上部供給口を更に備え、前記最上部供給口は前記管状ガスマニホールド導管の上流端部にて前記管状ガスマニホールド導管に接続される注入ポートを有する、請求項１に記載のガス注入システム。
  14. 最上部供給口は、ドライガスを提供するガス源に接続される、請求項１２に記載のガス注入システム。
  15. 前記ウェーハ処理リアクタは、原子層堆積（ＡＬＤ）用のリアクタ又は化学気相成長（ＣＶＤ）用のリアクタであり、前記管状ガスマニホールド導管はＡＬＤ又はＣＶＤ用の前記リアクタのガス注入ポートに接続される、請求項１に記載のガス注入システム。
  16. 前記管状ガスマニホールド導管は、前記ウェーハ処理リアクタのウェーハ収容領域上の中心にガス注入ポートを配置するように構成される、請求項１５に記載のガス注入システム。
  17. 請求項１に記載のガス注入システムを使用して混合ガスをウェーハ処理リアクタに供給するための方法であって、
    前記第１の供給口の注入ポートを通して前記第１のガスを前記管状ガスマニホールド導管に供給し、前記第２の供給口の注入ポートを通して前記第２のガスを前記管状ガスマニホールド導管に供給するステップであって、前記第１のガス及び前記第２のガスは前記管状ガスマニホールド導管の内部で混合される、ステップと、
    前記リアクタにロードされた基板上に膜を堆積させるために、前記ガス注入システムを通して混合したガスを前記ウェーハ処理リアクタに供給するステップと、
    を含む、方法。
  18. 前記管状ガスマニホールド導管は、前記管状ガスマニホールド導管の上流端部にて前記管状ガスマニホールド導管に接続される注入ポートを有する最上部供給口を更に備え、前記方法は、いずれか一方がプロセスガスである前記第１のガス及び前記第２のガスを前記管状ガスマニホールド導管に供給しながら、前記最上部供給口の注入ポートを通して不活性ガスを前記管状ガスマニホールド導管に供給するステップを更に含む、請求項１７に記載の方法。
  19. 前記膜は第１の条件下で堆積され、前記方法は、前記第１の条件下で堆積された膜の均一性と比較して、膜の改良された均一性を有して基板上に膜を堆積させるように、前記不活性ガスの流量を除いて前記第１の条件を維持しながら、前記最上部供給口からの前記不活性ガスの流量を変化させるステップを更に含む、請求項１８に記載の方法。
  20. 前記ガス供給口は下側ガス供給口として機能し、前記ガス注入システムは第３の供給口及び第４の供給口を備える上側ガス供給口を更に備え、前記上側ガス供給口の各々は、前記管状ガスマニホールド導管の第２の軸位置にて前記管状ガスマニホールド導管に接続される２つ以上の注入ポートを有し、前記第２の軸位置は前記第１の軸位置の上流に配置され、前記方法は、一方がプロセスガスである前記第１のガス及び前記第２のガスを前記管状ガスマニホールド導管に供給しながら、前記第３の供給口及び前記第４の供給口のそれぞれの注入ポートを通して第３のガス及び第４のガスを前記管状ガスマニホールド導管に供給するステップを更に含む、請求項１７に記載の方法。
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