JP4733214B1 - マスクパターンの形成方法及び半導体装置の製造方法 - Google Patents
マスクパターンの形成方法及び半導体装置の製造方法 Download PDFInfo
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- JP4733214B1 JP4733214B1 JP2010085956A JP2010085956A JP4733214B1 JP 4733214 B1 JP4733214 B1 JP 4733214B1 JP 2010085956 A JP2010085956 A JP 2010085956A JP 2010085956 A JP2010085956 A JP 2010085956A JP 4733214 B1 JP4733214 B1 JP 4733214B1
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
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- H01J37/32—Gas-filled discharge tubes
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- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
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- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
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- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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Abstract
【解決手段】レジスト膜よりなる第1のライン部をマスクとして反射防止膜をエッチングすることによって、第2のライン部を含むパターンを形成する第1のパターン形成工程S13と、レジスト膜に電子を照射する照射工程S14と、酸化シリコン膜を成膜する酸化シリコン膜成膜工程S15と、第2のライン部の側壁部として残存するように、酸化シリコン膜をエッチバック処理するエッチバック処理工程S16と、第2のライン部をアッシング処理することによって、酸化シリコン膜よりなり、側壁部として残存する第3のライン部を含むマスクパターンを形成する第2のパターン形成工程S18とを有する。
【選択図】図3
Description
(第1の実施の形態)
図1から図9を参照し、本発明の第1の実施の形態に係るマスクパターンの形成方法及び半導体装置の製造方法について説明する。
(実施例1)
実施例1として、図3におけるステップS11からステップS18の各工程を行った。実施例1におけるステップS13、ステップS14、ステップS16からステップS18の各工程の条件を以下に示す。
(A)第1のパターン形成工程(ステップS13)
成膜装置内圧力 :800mTorr
高周波電源パワー(40MHz/13MHz):200/0W
上部電極の電位 :−600V
ウェハ温度 :中心側/外周側=30/30℃
処理ガスの流量 :CF4/O2/Ar=150/50/1000sccm
処理時間 :30秒
(B)照射工程(ステップS14)
成膜装置内圧力 :100mTorr
高周波電源パワー(40MHz/13MHz):500/0W
上部電極の電位 :−900V
ウェハ温度 :中心側/外周側=30/30℃
処理ガスの流量 :H2/Ar=450/450sccm
処理時間 :10秒
(C)エッチバック処理工程(ステップS16)
成膜装置内圧力 :30mTorr
高周波電源パワー(40MHz/13MHz):500/100W
上部電極の電位 :300V
ウェハ温度 :中心側/外周側=30/30℃
処理ガスの流量 :C4F6/Ar/O2=15/450/22.5sccm
処理時間 :25秒
(D)第1のマスク膜エッチング工程(ステップS17)
成膜装置内圧力 :30mTorr
高周波電源パワー(40MHz/13MHz):400/0W
上部電極の電位 :0V
ウェハ温度 :中心側/外周側=30/30℃
処理ガスの流量 :CF4/CHF3/O2=125/125/20sccm
処理時間 :12秒
(E)第2のパターン形成工程(ステップS18)
成膜装置内圧力 :100mTorr
高周波電源パワー(40MHz/13MHz):500/0W
上部電極の電位 :0V
ウェハ温度 :中心側/外周側=30/30℃
処理ガスの流量 :H2/N2=300/900sccm
処理時間 :60秒
(実施例2)
実施例2として、図8におけるステップS11からステップS18の各工程を行った。実施例2におけるステップS14、ステップS16からステップS18の各工程の条件は、実施例1と同様である。また、実施例2におけるステップS13´の条件を以下に示す。
(F)第1のパターン形成工程(ステップS13´)
成膜装置内圧力 :800mTorr
高周波電源パワー(40MHz/13MHz):200/0W
上部電極の電位 :0V
ウェハ温度 :中心側/外周側=30/30℃
処理ガスの流量 :CF4/O2/Ar=150/20/1000sccm
処理時間 :55秒
(比較例1)
比較例1として、図8におけるステップS14を省略し、ステップS11、ステップS12、ステップS13´、ステップS15からステップS18の各工程を行った。比較例1におけるステップS16からステップS18の各工程の条件は、実施例1と同様である。また、比較例1におけるステップS13´の条件は、実施例2と同様である。
(G)被エッチング膜エッチング工程(ステップS20)
成膜装置内圧力 :25mTorr
高周波電源パワー(40MHz/13MHz):1500/1500W
上部電極の電位 :300V
ウェハ温度 :中心側=50℃
処理ガスの流量 :C4F8/Ar/O2=50/700/37sccm
処理時間 :40秒
表3は、ウェハ110の外周側の温度TOが40℃、50℃、60℃のときの、ウェハ110の中心側及び外周側における、それぞれ密部A1、疎部A2の第5のライン部112a、112bのライン幅(線幅)を示す。表3において、ウェハ110の中心側及び外周側における密部A1の第5のライン部112aのライン幅(線幅)を、それぞれLI31及びLO31とする。また、ウェハ110の中心側及び外周側における疎部A2の第5のライン部112bのライン幅(線幅)を、それぞれLI32及びLO32とする。
(第2の実施の形態)
次に、図10を参照し、本発明の第2の実施の形態に係るマスクパターンの形成方法について説明する。
112 被エッチング膜
113 マスク膜
114 反射防止膜
114a 第2のライン部
115 レジスト膜
115a 第1のライン部
116 酸化シリコン膜
116a 第3のライン部(側壁部)
Claims (7)
- 基板上に反射防止膜を介して形成されたレジスト膜よりなる第1のライン部をマスクとして前記反射防止膜をエッチングすることによって、前記レジスト膜と前記反射防止膜とよりなる第2のライン部を含むパターンを形成する第1のパターン形成工程と、
前記レジスト膜に電子を照射する照射工程と、
前記第1のパターン形成工程及び前記照射工程の後、前記第2のライン部を等方的に被覆するように酸化シリコン膜を成膜する酸化シリコン膜成膜工程と、
前記酸化シリコン膜を、前記第2のライン部の上部から除去するとともに、前記第2のライン部の側壁部として残存するように、前記酸化シリコン膜をエッチバック処理するエッチバック処理工程と、
前記エッチバック処理工程の後、前記第2のライン部をアッシング処理することによって、前記酸化シリコン膜よりなり、前記側壁部として残存する第3のライン部を含むマスクパターンを形成する第2のパターン形成工程と
を有する、マスクパターンの形成方法。 - 前記照射工程は、前記第1のパターン形成工程の後、前記第2のライン部に含まれている前記レジスト膜に電子を照射するものである、請求項1に記載のマスクパターンの形成方法。
- 前記第1のパターン形成工程は、前記第1のライン部に電子を照射しながら、前記反射防止膜をエッチングするものである、請求項1又は請求項2に記載のマスクパターンの形成方法。
- 前記第1のパターン形成工程は、前記第1のライン部をマスクとして前記反射防止膜をエッチングするとともに、前記第1のライン部をトリミングすることによって、前記第1のライン部の線幅よりも小さな線幅を有し、前記レジスト膜と前記反射防止膜とよりなる前記第2のライン部を含むパターンを形成するものである、請求項1から請求項3のいずれかに記載のマスクパターンの形成方法。
- 前記第1のパターン形成工程は、前記基板の面内における温度分布を調整することによって、前記基板の面内における前記第2のライン部の線幅の分布を制御するものである、請求項1から請求項4のいずれかに記載のマスクパターンの形成方法。
- 基板上に、被エッチング膜、マスク膜、前記反射防止膜及び前記レジスト膜を積層する積層工程と、
フォトリソグラフィ技術を用いて、前記レジスト膜よりなる前記第1のライン部を形成するフォトリソグラフィ工程と、
請求項1から請求項5のいずれかに記載のマスクパターンの形成方法により、前記マスクパターンを形成するマスクパターン形成工程と、
形成された前記マスクパターンを用いて前記マスク膜をエッチングすることによって、前記マスク膜よりなる第4のライン部を形成するマスク膜エッチング工程と、
形成された前記第4のライン部をマスクとして前記被エッチング膜をエッチングすることによって、前記被エッチング膜よりなる第5のライン部を形成する被エッチング膜エッチング工程と
を有する、半導体装置の製造方法。 - 前記被エッチング膜エッチング工程は、前記基板の面内における温度分布を調整することによって、前記基板の面内における前記第5のライン部の線幅の分布を制御するものである、請求項6に記載の半導体装置の製造方法。
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- 2011-03-28 KR KR1020127028853A patent/KR101427505B1/ko active IP Right Grant
- 2011-03-28 CN CN201180018012.1A patent/CN102822943B/zh active Active
- 2011-03-28 US US13/638,662 patent/US20130023120A1/en not_active Abandoned
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WO2013047464A1 (ja) * | 2011-09-28 | 2013-04-04 | 東京エレクトロン株式会社 | エッチング方法及び装置 |
KR20140068118A (ko) * | 2011-09-28 | 2014-06-05 | 도쿄엘렉트론가부시키가이샤 | 에칭 방법 및 장치 |
JPWO2013047464A1 (ja) * | 2011-09-28 | 2015-03-26 | 東京エレクトロン株式会社 | エッチング方法及び装置 |
US9263283B2 (en) | 2011-09-28 | 2016-02-16 | Tokyo Electron Limited | Etching method and apparatus |
KR101982366B1 (ko) * | 2011-09-28 | 2019-05-24 | 도쿄엘렉트론가부시키가이샤 | 에칭 방법 및 장치 |
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CN102822943B (zh) | 2015-10-21 |
TW201216324A (en) | 2012-04-16 |
KR20120132693A (ko) | 2012-12-07 |
KR101427505B1 (ko) | 2014-08-07 |
TWI450317B (zh) | 2014-08-21 |
CN102822943A (zh) | 2012-12-12 |
WO2011125605A1 (ja) | 2011-10-13 |
US20130023120A1 (en) | 2013-01-24 |
JP2011216817A (ja) | 2011-10-27 |
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