JP2020205434A - チャンバ内部の流れを拡散させることによる低い粒子数及びより良好なウエハ品質のための効果的で新しい設計 - Google Patents
チャンバ内部の流れを拡散させることによる低い粒子数及びより良好なウエハ品質のための効果的で新しい設計 Download PDFInfo
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- 239000002245 particle Substances 0.000 title abstract description 18
- 238000010926 purge Methods 0.000 claims abstract description 57
- 238000002347 injection Methods 0.000 claims description 16
- 239000007924 injection Substances 0.000 claims description 16
- 239000000758 substrate Substances 0.000 abstract description 21
- 238000011109 contamination Methods 0.000 abstract description 4
- 239000007789 gas Substances 0.000 description 244
- 239000000463 material Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 239000012761 high-performance material Substances 0.000 description 6
- 238000005121 nitriding Methods 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000006104 solid solution Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000284 resting effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
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Abstract
Description
Claims (15)
- 底部と、
前記底部の上に配置された下側壁と、
前記下側壁の上に配置された上側壁と、
前記上側壁の上に配置されたリッドと、
前記リッドの上に配置された処理ガス注入ポートと、
前記底部に位置し且つ前記下側壁に隣接した、パージガス又は加圧ガスを処理チャンバに導入するための一又は複数のガス入口ポートと、
前記底部に連結された排気エンクロージャと
を含む処理チャンバ。 - 一又は複数のガス入口を更に含み、前記一又は複数のガス入口の各ガス入口が、前記一又は複数のガス入口ポートの対応するガス入口ポートに連結され、各ガス入口が第1の断面積を有し、各ガス入口ポートが第2の断面積を有し、前記第2の断面積が前記第1の断面積より大きい、請求項1に記載の処理チャンバ。
- 前記一又は複数のガス入口の各ガス入口が、前記下側壁に沿って流れるように前記パージガス又は加圧ガスを方向付けるために、前記処理チャンバの基準面と角度を形成する開口部を含む、請求項2に記載の処理チャンバ。
- 前記一又は複数のガス入口の各ガス入口が、前記下側壁の方位角に一致するスリット状の開口部を含む、請求項2に記載の処理チャンバ。
- 前記一又は複数のガス入口ポートの対応するガス入口ポートの上に各々が配置されている一又は複数のプレートを更に含む、請求項1に記載の処理チャンバ。
- 前記一又は複数のプレートが、前記底部の上に配置されたねじカバーに連結される、請求項5に記載の処理チャンバ。
- 前記一又は複数のプレートの各プレートが、前記底部の上に配置された複数の支持体によって支持される、請求項5に記載の処理チャンバ。
- 前記一又は複数のガス入口ポートの各ガス入口ポート内に配置されたリテーナを更に含む、請求項1に記載の処理チャンバ。
- 第1の領域及び第2の領域を有する底部と、
前記底部の上に配置され、第1の領域及び第2の領域を有する下側壁と、
前記下側壁の前記第1の領域の上に配置された上側壁と、
前記上側壁の上に配置されたリッドと、
前記リッドの上に配置された処理ガス注入ポートと、
前記底部の前記第1の領域に位置し且つ前記下側壁の前記第1の領域に隣接した、パージガス又は加圧ガスを処理チャンバに導入するための一又は複数のガス入口ポートと、
前記底部の前記第2の領域に連結された排気エンクロージャと
を含む処理チャンバ。 - 前記一又は複数のガス入口ポートの対応するガス入口ポートに各々が連結される一又は複数のガス入口を更に含む、請求項9に記載の処理チャンバ。
- 前記一又は複数のガス入口ポートが、前記底部の前記第1の領域から前記底部の前記第2の領域まで延びる軸に対して対称である2つのガス入口ポートを含む、請求項9に記載の処理チャンバ。
- 第1の領域及び第2の領域を有する底部と、
前記底部の上に配置され、第1の領域及び第2の領域を有する下側壁と、
前記下側壁の前記第1の領域の上に配置された上側壁と、
前記上側壁の上に配置されたリッドと、
前記リッドの上に配置された処理ガス注入ポートと、
前記底部の前記第1の領域に位置し且つ前記下側壁の前記第1の領域に隣接した、パージガス又は加圧ガスを処理チャンバに導入するための一又は複数のガス入口ポートと、
前記処理チャンバ内に配置された一又は複数のプレートであって、前記一又は複数のガス入口ポートの対応するガス入口ポートの上に各々が配置されている一又は複数のプレートと、
前記底部の前記第2の領域に連結された排気エンクロージャと
を含む処理チャンバ。 - 前記一又は複数のプレートの各プレートが、前記プレートの表面に連結された複数の支持体によって支持され、前記複数の支持体が、前記底部の前記第1の領域の上に配置されている、請求項12に記載の処理チャンバ。
- 前記一又は複数のプレートの各プレートが、前記プレートの前記表面に連結された複数の支柱を含み、前記複数の支柱の各支柱が、前記複数の支持体の各支持体の厚さを上回る厚さを有する、請求項13に記載の処理チャンバ。
- 前記一又は複数のガス入口ポートの各ガス入口ポート内に配置され、内側エッジ、外側エッジ、及び前記内側エッジと前記外側エッジとの間に形成された複数の開口部を含むリテーナを更に含み、前記複数の支柱の各支柱の端部が、前記複数の開口部の対応する開口部に挿入される、請求項12に記載の処理チャンバ。
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Also Published As
Publication number | Publication date |
---|---|
TWI744140B (zh) | 2021-10-21 |
JP6888159B2 (ja) | 2021-06-16 |
US20200199730A1 (en) | 2020-06-25 |
CN109478494B (zh) | 2023-07-18 |
CN109478494A (zh) | 2019-03-15 |
TW202113101A (zh) | 2021-04-01 |
WO2017209802A1 (en) | 2017-12-07 |
US10619235B2 (en) | 2020-04-14 |
KR102303066B1 (ko) | 2021-09-16 |
SG11201810824UA (en) | 2019-01-30 |
TWI718292B (zh) | 2021-02-11 |
KR20210008160A (ko) | 2021-01-20 |
KR20190004836A (ko) | 2019-01-14 |
US20170349994A1 (en) | 2017-12-07 |
TW201807219A (zh) | 2018-03-01 |
JP2019522899A (ja) | 2019-08-15 |
KR102204637B1 (ko) | 2021-01-19 |
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CN116978818A (zh) | 2023-10-31 |
US10808310B2 (en) | 2020-10-20 |
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