TW201542860A - 具有氣體供應環的化學氣相沈積設備 - Google Patents
具有氣體供應環的化學氣相沈積設備 Download PDFInfo
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Abstract
本發明係關於一種化學氣相沉積設備以及相關方法。於一些實施例中之化學氣相沉積裝置具有一真空腔室以及一進氣埠,且該進氣埠具有一進氣埠軸,一製程氣體經由進氣埠進入該真空腔室,且該進氣埠被配置靠近該真空腔室之一上部區域。至少一排出埠配置靠近真空腔室之一底部區域。化學氣相沉積設備更具有一氣體供應環,其具有一出口設置低於進氣埠。靠近氣體供應環之出口之壓力低於真空腔室其他部分之壓力。
Description
在製造積體電路(ICs)中,化學氣相沉積(CVD)是重要製程之一,用於在基板上形成薄層或膜。在CVD製程中,基板暴露於前驅氣體,其反應於基板的表面上並沉積反應之產物於基板上。
當前趨勢的CVD設備設計係朝向處理單一大尺寸晶圓,且可與其他製造製程步驟結合。隨著基板尺寸增加,許多方案像室氣體分配系統、基板加熱與冷卻系統以及腔室建設、設計與對稱以及其他方案被研究以在基板上形成均勻膜,換句話說,膜具有較小之厚度變異。
根據以下的詳細說明並配合所附圖式做完整揭露。應注意的是,根據本產業的一般作業,圖示並未必按照比例繪製。事實上,可能任意的放大或縮小元件的尺寸,以做清楚的說明。
第1圖係根據本發明一些實施例中之CVD設備之剖視圖。
第2a圖係根據本發明一些實施例中之氣體供應環結構,表示一部分CVD設備之立體圖。
第2b圖係根據本發明一些實施例中之氣體供應環結構之剖視圖。
第2c圖係根據本發明一些實施例中之另一氣體供應環之剖視圖。
第3圖係表示一存在有缺陷的CVD設備之剖視圖。
第4圖係表示一存在有缺陷的CVD製程後之基板。
第5圖係根據本發明一些實施例中之氣相沉積方法之流程圖。
以下的揭露內容提供許多不同的實施例或範例以實施本案的不同特徵。以下的揭露內容敘述各個構件及其排列方式的特定範例,以簡化說明。當然,這些特定的範例並非用以限定。例如,若是本揭露書敘述了一第一特徵形成於一第二特徵之上或上方,即表示其可能包含上述第一特徵與上述第二特徵是直接接觸的實施例,亦可能包含了有附加特徵形成於上述第一特徵與上述第二特徵之間,而使上述第一特徵與第二特徵可能未直接接觸的實施例。另外,以下揭露書不同範例可能重複使用相同的參考符號及/或標記。這些重複係為了簡化與清晰的目的,並非用以限定所討論的不同實施例及/或結構之間有特定的關係。
此外,其與空間相關用詞。例如“在...下方”、“下方”、“較低的”、“上方”、“較高的”及類似的用詞,係為了便於描述圖示中一個元件或特徵與另一個(些)元件或特徵之間的關係。除了在圖式中繪示的方位外,這些空間相關用詞意欲包含使用中或操作中的裝置之不同方位。裝置可能被轉向不同方位(旋轉90度或其他方位),則在此使用的空間相關詞
也可依此相同解釋。
關於大型基板尺寸,例如,直徑為200mm至300mm,或甚至至450mm或更大者,其難以均勻地分配氣體於基板上。因此,沉積於基板上的膜通常為中央厚或是邊緣厚,以及其他狀況導成為非均勻。例如為第3圖所示,處理氣體經過一進氣埠306沿著一軸330進入一CVD腔室。材料沉積在基板上自中心至邊緣逐漸變薄。第4圖例示了一基板在CVD製程厚的厚度梯度。如第4圖所示,基板的一中央區域具有接近21埃(Å)的膜厚,而基板的一邊緣區域具有大約只有19埃的較薄膜厚。此為一非均勻沉積的例子。
第1圖表示了依據一些實施例之一CVD設備100的剖面圖。CVD設備100包含一真空腔室102。一進氣埠106配置為在真空腔室102的一側,例如,具有一進氣軸130且靠近真空腔室102之一上部區域。至少一排出口110配置在真空腔室的一相反側,例如,靠近真空腔室102之一底部區域。一處理氣體108自一進氣埠106進入真空腔室102,且以線性或大致線性的方法通過至一排出埠110。一晶圓夾120配置在進氣埠106與排出口110之間,且位於該真空腔室102之一較低部分。晶圓夾120保持一半導體基板104,例如可為220mm、3300mm或450mm。
一氣體供應環112具有大致相同於真空腔室102的側向尺寸且耦接於真空腔室102之一側壁,其中真空腔室102配置為平行於晶圓夾120。氣體供應環112設置於進氣埠106與晶圓夾120之間且靠近該進氣埠106。氣體供應環112配置成藉由壓力差而重新定向處理氣體108。氣體供應環112之一出口118
以低於真空腔室之其他區域之一壓力供應一載體氣體114b。因此,部分處理氣體108被重新定向(例如:吸引)朝向靠近出口118之一區域,以校正積存於晶圓夾120之一中央區域且位於基板104所擺設的中心處的不均衡處理氣體108。如此,重新定向的氣體130在基板104的中心與邊緣不均勻地抵達晶圓夾120表面,而利於均勻沉積於晶圓表面上
一氣體分配系統125可配置於進氣埠106與晶圓夾120之間,且配置於氣體供應環的上游以分配處理氣體108。於一些實施例中,氣體分配系統125包括一檔板126連接進氣埠106且具有複數個孔形成貫穿其中。氣體分配系統125可更包括一噴灑頭122設置低於檔板126,且具有一側向尺寸接近等於晶圓夾120。於一些實施例中,噴灑頭122具有複數個孔形成貫穿其中,且至少具有兩種不同直徑。檔板126的孔的尺寸以及/或孔的排列可不同於噴灑頭122。例如,檔板126具有一孔密度小於噴灑頭122,且一孔徑大於噴灑頭122。於一些實施例中,氣體供應環112可連接噴灑頭122的一外側側壁。
於一些實施例中,CVD設備100可為設備為電漿輔助化學氣相沉積(PECVD)設備、常壓化學氣相沉積(atmospheric pressure CVD)設備、或有機金屬氣相沉積(metalorganic CVD)設備。真空腔室102的上部區域為一圓頂形狀或一法蘭。晶圓夾120具有一半徑大致與氣體供應環112相同,且可沿著軸130垂直地移動。可動的晶圓夾12用於調整其在腔室102中的位置。一加熱系統或冷卻系統可包含於晶圓夾120中,用以加熱或冷卻半導體基板104,且/或配置成用以加熱真空腔室102的
壁。一直流電源或一射頻電源124可被連接至真空腔室102,用以在電漿輔助化學氣相沉積製程中製造電漿。
如第2圖a所示之一部分CVD設備的立體圖,根據一些實施例係對應於第1圖中的氣體供應環112。氣體供應環112可包含一側壁,其具有至少兩進口116a與116b連接在真空腔室側壁且配置為對稱於進口軸130。如此,進口軸130通過氣體供應環的一中心。進口116a、116b可被設置於真空腔室外側,且出口118如繪示般為一連續開口,延伸環繞整個氣體供應環之一側壁。一氣流114a、114b,例如為一載體氣體,自進口116a、116b進入且在自出口118排出前流經環(114c)。進氣口116a、116b可具有一大於出口118之截面積,致使出口118處具有一高速氣體分子流114d,其在基板外周緣上方提供一圓筒型的低壓區域(例如第1圖,標號104)。此圓筒型低壓區域傾向於將處理氣體108拉向真空腔室側壁,而不破壞自進氣埠106朝向基板104向下流動之大致為層流的處理氣體108。其結果為在沉積完成後,更加均勻的膜厚被沉積於基板104上。
在其他實施例中,出口118並非為一連續開口,延伸環繞整個氣體供應環之一側壁,而是出口118可包含一系列分離或獨立的開口。在這些替代的實施例中,分離或獨立的開口通常對稱地間隔於氣體供應環112之一內周表面或一外周表面。開口可以單獨一行形成在內周表面,或是可以分布在內周面的多個行形成在內周表面。
第2b、2c圖更加詳細地表示了氣體供應環112對應第2a圖中之剖面線200之剖面圖。
如第2b圖所示,載體氣體114b如箭頭134所示般以彎曲路徑傳遞。這些高速氣體分子引起一低氣壓(PL)靠近出口118,其中低氣壓PL小於真空腔室其他部分處之一高氣壓(PH)。因此,對於處理氣體分子108a來說,當其經過出口118附近,低壓區域對於氣體分子引起一導向上的改變,並將它們轉移到替代路徑108’上。此替代路徑108a’
如第2b圖所示的出口118可配置在氣體供應環112的一上部區域。需特別說明的是,氣體供應環112之一上部區域141具有曲面140,其懸掛於氣體供應環112之一下部區域142,以使得出口118藉由懸掛尺寸而定義。為了促進所需要的流動,氣體供應環112的下部區域142包含一內側壁部144,其向下傾斜且位於一不平行於真空腔室之側壁之角度。一唇部或法蘭146可自氣體供應環之下部區域的最上部區域延伸朝向出口118,以進一步協助建立所需的流動模式。
雖然第2b圖之實施例將載體氣體114b導向至大至垂直於基板表面(例如第1圖,元件標號104)的一向下方向,但申請人強調本發明之揭露並不限定於此。例如,如第2c圖所示之另一例子,載體氣體以小角度朝向真空腔室側壁而排出(例如相對於基板104之表面為一非正交小角度)。如第2c圖般的配置,可將層流之處理氣體108相較於第2b圖般的配置更加拉向真空腔室的側壁,但是依然使處理氣體108大致保持為層流且不在真空腔室內引入顯著的紊流。因此,即使第2b圖為一較佳方案,但第2c圖表示了另一種可能的方案。更進一步地,於一些實施例中,載體氣體流可甚至被導向稍微進入腔室(例如,
遠離真空腔室的側壁),只要大致的層流被保留用以促進均勻沉積基板104的表面。
第5圖表示了一種根據一些實施例之化學氣相沉積方法之流程圖。
在502中,一處理氣體自一腔室的一側供應至腔室的相反側。腔室可為水平或垂直的管式反應器、噴灑頭式反應器、常壓化學氣相沉積反應器、有機金屬氣相沉積反應器、或電漿輔助化學氣相沉積等或其他類型的腔室。
在504中,一半導體基板配置成大致垂直處理氣體之流動路徑之一軸,其中處理氣體被加熱至一溫度範圍。
在506中,另一氣體自腔室外側沿著軸通過氣體供應環而供應,氣體供應還配置成沿著軸且具有大致與半導體基板相同之尺寸,提供一壓力圍繞氣體供應環之一出口且低於腔室其餘區域的壓力。
在508中,一處理氣體產物被沉積至半導體基板。處理氣體藉由環繞氣體供應環之一區域之出口壓力與腔室其於區域之間的壓力差被導引且變得均勻。
大致上來說,本發明之揭露係關於一種為了達到均勻沉積之優化CVD設備。更具體的說,本發明揭露了一種連接一CVD設備的氣體供應環,藉由改變選擇區域之壓力以重新分配處理氣體。如此,沉積在基板上的CVD膜的均勻性得到改善。
因此,可理解到一些實施例係相關於CVD設備。CVD設備包括一真空腔室。CVD設備更包括一進氣埠,其具有
一進氣埠軸通過,且使一處理氣體進入真空腔室,並配置成靠近真空腔室之一上部區域,且具有至少一排出口配置成靠近真空腔室之一底部區域。CVD設備更包括一氣體供應環,其具有一出口低於進氣埠而設置。靠近氣體供應環之出口的一壓力低於真空腔室其餘部分之壓力。
另一些實施例係相關於用於分配一處理氣體且具有一半導體基板處理腔室的設備。設備包括一進氣埠設置於腔室的一側,一排出埠設置於腔室的相反側。處理氣體自進氣埠流經腔室至排出埠。裝置更包括一晶圓夾,配置在進氣埠與排出埠之間用以保持一半導體基板。裝置更包含一氣體供應環,配置為平行晶圓夾且靠近進氣埠,具有一大致與晶圓夾相同之外側尺寸。設備更包括一氣體源自設置於腔室外側之氣體供應環之一進口流向氣體供應環之一出口。
再另一些實施例係關於一種化學氣相沉積之方法。在此方法中,一處理氣體從一腔室之一側背供應至腔室之相反側。一半導體基板配置為大致垂直於該處理氣體之流路之軸且被加熱至一溫度範圍。自腔室外側供應另一氣體經過一氣體供應環,氣體供應環配置為沿著軸且具有大致與半導體基板相同之尺寸,提供一壓力圍繞氣體供應環之一出口且低於腔室其餘區域的壓力。一處理氣體產物被沉積至半導體基板。
前述內文概述了許多實施例的特徵,使本技術領域中具有通常知識者可以從各個方面更佳地了解本揭露。本技術領域中具有通常知識者應可理解,且可輕易地以本揭露為基礎來設計或修飾其他製程及結構,並以此達到相同的目的及/
或達到與在此介紹的實施例等相同之優點。本技術領域中具有通常知識者也應了解這些相等的結構並未背離本揭露的發明精神與範圍。在不背離本揭露的發明精神與範圍之前提下,可對本揭露進行各種改變、置換或修改。
Claims (20)
- 一種化學氣相沉積設備,包括一真空腔室;一進氣埠,具有一進氣埠軸通過其中,其中一處理氣體進入該真空腔室且被配置成靠近該真空腔室之一上部區域;至少一排出埠,配置成靠近該真空腔室之一底部區域;以及一氣體供應環,具有一出口且設置低於該進氣埠;靠近該氣體供應環之該出口之一壓力低於該真空腔室其他部分之壓力。
- 如申請專利範圍第1項所述之化學氣相沉積設備,其中該氣體供應環具有一進口,其一剖面面積大於該出口。
- 如申請專利範圍第1項所述之化學氣相沉積設備,其中該氣體供應環包含一至少具有兩進口的側壁,該至少兩進口配置成對稱於一進口軸。
- 如申請專利範圍第1項所述之化學氣相沉積設備,其中該氣體供應環之該出口為一連續開口,延伸環繞整個該氣體供應環之一側壁。
- 如申請專利範圍第1項所述之化學氣相沉積設備,其中該氣體供應環包含有一系列獨立的開口,其對稱地間隔於該氣體供應環之一內周表面或一外周表面。
- 如申請專利範圍第1項所述之化學氣相沉積設備,其中該氣體供應環耦接於該腔室之一側壁,具有一側向尺寸大致與該真空腔室相同。
- 如申請專利範圍第1項所述之化學氣相沉積設備,其中該氣體供應環之該出口包含該氣體供應環之一上部區域之一曲面,其懸掛於該氣體供應環之一下部區域之上。
- 如申請專利範圍第1項所述之化學氣相沉積設備,其中該真空腔室之該上部區域為一圓頂形狀或一法蘭。
- 如申請專利範圍第1項所述之化學氣相沉積設備,其中更包括一晶圓夾,該晶圓夾為可動且配置於該真空腔室的下側部分。
- 如申請專利範圍第9項所述之化學氣相沉積設備,其中該氣體供應環配置為重新定向該處理氣體,使該處裡氣體流過該真空腔室到達該晶圓夾之一表面,所以該重新定向之氣體均勻地到達該晶圓夾之中央區域以及邊緣區域之該表面。
- 如申請專利範圍第9項所述之化學氣相沉積設備,其中該化學氣相沉積設備更包括一噴灑頭,用以在該氣體供應環之前重新分配來自該進氣埠的該處理氣體,該噴灑頭的側向尺寸大約與該晶圓夾相等。
- 如申請專利範圍第11項所述之化學氣相沉積設備,其中該氣體供應環連接至該噴灑頭之一外側側壁,具有一外側尺寸大致相同於該真空腔室。
- 如申請專利範圍第11項所述之化學氣相沉積設備,其中該噴灑頭更包含複數個孔形成並貫穿其中,且具有至少兩種不同直徑。
- 如申請專利範圍第1項所述之化學氣相沉積設備,其中該化 學氣相沉積設備更包括一加熱系統或一冷卻系統用以加熱或冷卻一半導體基板。
- 如申請專利範圍第1項所述之化學氣相沉積設備,其中該化學氣相沉積設備為電漿輔助化學氣相沉積(PECVD)設備、常壓化學氣相沉積(atmospheric pressure CVD)設備、或有機金屬氣相沉積(metalorganic CVD)設備。
- 一種設備,用於分配處理氣體於一半導體基板處理腔室,包含有:一進氣埠,設置於該腔室之一側,一排出埠設置於該腔室之一相反側,其中該處裡氣體自該進氣埠經過該腔室流至該排出口;一晶圓夾,配置圍在該進氣埠與排出口之間用以保持一半導體晶圓;以及一氣體供應環,配置為平行該晶圓夾且靠近該進氣埠,具有一大致與晶圓夾相同之外側尺寸;一氣體源自設置於該腔室外側之該氣體供應環之一進口流向該氣體供應環之一出口。
- 如申請專利範圍第16項所述之設備,其中該處理氣體藉由該腔室之一接近該氣體供應環之該出口之區域以及該腔室之其他區域之間的壓力差而被重新定向,使其之分配在流經過該晶圓夾時為均勻。
- 如申請專利範圍第16項所述之設備,其中該設備更包含一噴灑頭,具有複數個孔形成並貫穿其中用以重新定向該處理氣體,該氣體供應環連接於該噴灑頭之一外側側壁。
- 一種化學氣相沉積之方法,包括:從一腔室之一側供應一處理氣體至該腔室之該相反側;加熱一半導體基板至一溫度範圍,其中該半導體基板配置為大致垂直於該處理氣體之流路之軸;自該腔室外側供應另一氣體經過一氣體供應環,該氣體供應環配置為沿著該軸且具有大致與該半導體基板相同之尺寸,提供一壓力圍繞該氣體供應環之一出口且低於該腔室其餘區域的壓力;以及沉積一處理氣體產物至該半導體基板。
- 如申請專利範圍第19項所述之方法,其中該處理氣體藉由一圍繞該氣體供應環之該出口之區域以及該腔室之其他區域之間的壓力差而被導引,使該處理氣體沉積至該半導體基板變得均勻。
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Also Published As
Publication number | Publication date |
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US20150252475A1 (en) | 2015-09-10 |
TWI612174B (zh) | 2018-01-21 |
US9741575B2 (en) | 2017-08-22 |
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