TW202043536A - 基板處理裝置 - Google Patents

基板處理裝置 Download PDF

Info

Publication number
TW202043536A
TW202043536A TW108134349A TW108134349A TW202043536A TW 202043536 A TW202043536 A TW 202043536A TW 108134349 A TW108134349 A TW 108134349A TW 108134349 A TW108134349 A TW 108134349A TW 202043536 A TW202043536 A TW 202043536A
Authority
TW
Taiwan
Prior art keywords
gas
substrate processing
feeding pipe
chamber
processing apparatus
Prior art date
Application number
TW108134349A
Other languages
English (en)
Inventor
辻直人
平山昌樹
Original Assignee
荷蘭商Ａｓｍｉｐ控股公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 荷蘭商Ａｓｍｉｐ控股公司 filed Critical 荷蘭商Ａｓｍｉｐ控股公司
Publication of TW202043536A publication Critical patent/TW202043536A/zh

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45512—Premixing before introduction in the reaction chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4409—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber characterised by sealing means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F23/00—Mixing according to the phases to be mixed, e.g. dispersing or emulsifying
    • B01F23/10—Mixing gases with gases
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F25/00—Flow mixers; Mixers for falling materials, e.g. solid particles
    • B01F25/10—Mixing by creating a vortex flow, e.g. by tangential introduction of flow components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F25/00—Flow mixers; Mixers for falling materials, e.g. solid particles
    • B01F25/20—Jet mixers, i.e. mixers using high-speed fluid streams
    • B01F25/23—Mixing by intersecting jets
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F35/00—Accessories for mixers; Auxiliary operations or auxiliary devices; Parts or details of general application
    • B01F35/55—Baffles; Flow breakers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16L—PIPES; JOINTS OR FITTINGS FOR PIPES; SUPPORTS FOR PIPES, CABLES OR PROTECTIVE TUBING; MEANS FOR THERMAL INSULATION IN GENERAL
    • F16L41/00—Branching pipes; Joining pipes to walls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Engineering & Computer Science (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

基板處理裝置之實例包括腔室、歧管、第一氣體源以及第二氣體源。歧管包括管狀部分、第一進給管、第二進給管以及氣體導引部分。管狀部分被提供在腔室上方；第一進給管被提供在管狀部分之側表面上；第二進給管被提供在管狀部分之側表面上；複數氣體從第一進給管及第二進給管被進給，氣體導引部分係配置以一旦在與腔室相反的方向導引上述氣體至管狀部分之中，就接著進給上述氣體至腔室之中。第一氣體源配置以供給氣體至第一進給管之中；第二氣體源配置以供給氣體至第二進給管之中。

Description

基板處理裝置
本發明係有關於一種基板處理裝置。
有一種情況中歧管被提供在腔室上，以便與腔室之內部空間互通。歧管被配置以便混合從數個進給管進給的氣體，且接著供給混合的氣體至腔室。舉例來說，混合的氣體係用於腔室中之基板上的膜形成(film formation)、膜蝕刻(etching)、膜重組(reforming)等。
當歧管之中的氣體混合不充分時，可出現多種不利的影響。舉例來說，當氣體被供給作為前驅物(precursor)以產生電漿時，進給至電漿空間之中的前驅物之濃度變得不均勻。不均勻的前驅物濃度使形成在基板上的膜之膜厚度分佈劣化，或導致氣相(gas phase)中出現粒子。
本文描述的一些實例可提及上述問題。本文描述的一些實例可提供具有能夠充分地混合氣體的歧管之基板處理裝置。
在一些實例中，基板處理裝置包括腔室、歧管、第一氣體源以及第二氣體源。歧管包括管狀部分、第一進給管、第二進給管以及氣體導引部分。管狀部分被提供在腔室上方；第一進給管被提供在管狀部分之側表面上；第二進給管被提供在管狀部分之側表面上；複數氣體從第一進給管及第二進給管被進給，氣體導引部分配置以一旦在與腔室相反的方向導引上述氣體至管狀部分之中，就接著進給上述氣體至腔室之中。第一氣體源配置以供給氣體至第一進給管之中；第二氣體源配置以供給氣體至第二進給管之中。
將參照圖式描述一種基板處理裝置。相同或相對應的組成元件將藉由相同的參考符號表現，且其中重複的說明可被省略。
第1圖為顯示基板處理裝置之配置實例的剖面圖。舉例來說，基板處理裝置10係配置如膜形成裝置，以施加電漿輔助式原子層沉積(Plasma Enhanced Atomic Layer Deposition，PEALD)至基板。在基板處理裝置10中有可能不僅執行原子層沉積(Atomic Layer Deposition，ALD)，而且也執行化學氣相沉積(Chemical Vapor Deposition，CVD)製程、膜蝕刻、及膜重組。基板處理裝置10包括腔室(反應器腔室)12。腔室12中提供被施加射頻功率(Radio-frequency power，RF power)的淋浴頭(shower head)14。淋浴頭14其中上方側上具有一個開口，且其中下方側上具有數個狹縫14a。
腔室12中提供面向淋浴頭14的載臺16。舉例來說，載臺16為藉由滑動軸18支持的基座(susceptor)。藉由淋浴頭14及載臺16形成平行的板結構。由於載臺16上方的空間係，在放置於載臺16上之基板上執行製程(例如膜形成)的空間，此空間被稱為製程空間17。
歧管50經由絕緣部20連接至淋浴頭14。歧管50為用以混合將被供給至淋浴頭14及載臺16之間的氣體的一部分。根據一實例，歧管50包括管狀部分51、氣體導引部分52、第一進給管54、以及第二進給管56。舉例來說，管狀部分51係被提供在腔室12上方的部分，且固定至絕緣部20。舉例來說，管狀部分51可經由O型環或不經由O型環，用螺絲固定至絕緣部20之上。第一進給管54及第二進給管56被提供在管狀部分51之側表面上。第一進給管54及第二進給管56係與管狀部分51內部互通的管。
氣體導引部分52被提供在管狀部分51內部。氣體從第一進給管54及第二進給管56被進給，氣體導引部分52一旦在與腔室12相反的方向導引氣體至管狀部分51之中，就接著進給上述氣體至腔室12之中。在第1圖中，與腔室12相反的方向對應至正z方向。亦即，氣體導引部分52一旦在正z方向導引氣體，就接著在負z方向導引氣體，從而提供氣體至腔室12之中。
第2圖為顯示歧管50之配置實例的立體圖。根據一實例，氣體導引部分52包括底板部分52A及內管52B。底板部分52A為中心具有開口52a且具有與管狀部分51接觸之外緣的板(plate)。內管52B可為底部表面與底板部分52A接觸的圓柱。藉由以圓柱形形成內管52B，內管52B的側表面為曲形。藉由提供如上述之氣體導引部分52，管狀部分51的內部空間與腔室12內部彼此僅透過開口52a互通。
第3圖為顯示歧管50之配置實例的底面圖。舉例來說，內管52B的直徑x1等於50毫米；且舉例來說，管狀部分51的直徑x2等於100毫米。其他數值可被採用。如第3圖所示，第一進給管54朝氣體導引部分52的中心進給氣體，且第二進給管56在與第一進給管54之氣體進給方向徑向相反的方向，朝氣體導引部分52的中心進給氣體。換句話說，第一進給管54在正x方向進給氣體至管狀部分51之中，且第二進給管56在負x方向進給氣體至管狀部分51之中。在此實例中，第一進給管54及第二進給管56係在平面視角中之一直線上彼此對齊。請注意「平面視角」意指在正z方向或負z方向觀察物體。
第4圖為顯示歧管50之配置實例的立體圖。舉例來說，內管52B的高度z1設定為70毫米。舉例來說，管狀部分51的高度z2設定為100毫米。舉例來說，內管52B及管狀部分51之間的距離x3設定為25毫米。在此案例中，內管52B的高度(70毫米)等於內管52B及管狀部分51之間的距離(25毫米)的2.8倍。亦即，z1除以x3等於2.8。根據另一實例，z1除以x3可設定為2.8或依前述z1及x3值而有更多不同值。
內管52B的高度z1可設定為60毫米，同時內管52B及管狀部分51之間的距離x3設定為25毫米。在此案例中，內管52B的高度(60毫米)等於內管52B及管狀部分51之間的距離(25毫米)的2.4倍。亦即，z1除以x3等於2.4。根據另一實例，z1除以x3可設定為2.4或依前述z1及x3值而有更多不同值。在另一實例中，其他數值可被取用。
再回到關於第1圖的說明。閘閥58被提供在歧管50上。遠端電漿單元59被提供在閘閥58上方。遠端電漿單元59主要產生用以清潔腔室12的電漿。腔室12的清潔可在閘閥58開啟的同時，經由歧管50及淋浴頭14，藉由從遠端電漿單元59提供電漿至腔室12而執行。除了清潔週期期間，閘閥58為關閉。
第一氣體源40經由閥V3連接至第一進給管54。任何用以供給氣體至第一進給管54的氣體源皆對應至第一氣體源40。載體氣體源32經由閥Va連接至第二進給管56，且第二氣體源22經由數個閥V1連接至第二進給管56。舉例來說，液體材料儲存在第二氣體源22中，且液體材料的蒸氣藉由從載體氣體源32提供的載體氣體被提供至第二進給管56。任何用以供給氣體至第二進給管56的氣體源皆對應至第二氣體源22。第一氣體源40及第二氣體源22皆被容許作為任何需要用以處理基板之氣體的氣體源。舉例來說，它們可被用作雙(二乙胺基)矽烷(Bis(diethylamino)silane，BDEAS)、氧氣、四碘化矽、二氯矽烷(dichlorosilane，DCS)、氨、四乙氧基矽烷(tetraethoxysilane，TEOS)或類似物的氣體源。第一氣體源40及第二氣體源22可提供形成氮化膜(例如氮化矽)所需的氣體。第一氣體源40及第二氣體源22可被用作提供不同氣體的任意氣體源。
排氣導管30被提供在淋浴頭14及腔室12之間。舉例來說，排氣導管30由陶瓷材料形成。適當地被壓縮的O型環31可被提供在排氣導管30及淋浴頭14之間。適當地被壓縮的O型環34可被提供在排氣導管30及腔室12之間。
排氣導管30在平面視角中形成為環狀，以便圍繞載臺16。在載臺16上方圍繞製程空間17的環狀通道30b藉由排氣導管30提供。在排氣導管30中，供給氣體至製程空間17通過的環狀狹縫30a被導引至環狀通道30b，且環狀通道30b中提供排氣口30c以排放氣體至外部。
排氣口30c係連接至提供在腔室12之側表面上的氣體排氣部分41。氣體排氣部分41被提供以排出使用過的氣體。閥42及真空泵44連接至氣體排氣部分41。腔室12中的壓力可藉由閥42及真空泵44調整排放量而自由控制。
接下來，將描述基板處理裝置10之一操作實例。第5圖為例示歧管50中氣體流動的剖面圖。從第一進給管54提供而進入管狀部分51的第一氣體碰撞內管52B，且在正z方向(與腔室相反的方向)被導引，如箭頭a1指示。之後，第一氣體在正z方向的流動減弱，且第一氣體在負z方向前進通過內管52B，如箭頭a2指示。另一方面，從第二進給管56提供而進入管狀部分51的第二氣體碰撞內管52B，且在正z方向(與腔室相反的方向)被導引，如箭頭a3指示。之後，第二氣體在正z方向的流動減弱，且第二氣體在負z方向前進通過內管52B，如箭頭a4指示。當第一氣體及第二氣體如箭頭a1、a2、a3、及a4指示而前進，第一氣體及第二氣體廣泛地擴散在xy平面上，且充分地彼此混合。
如上述從歧管50供給的氣體通過第1圖所示的淋浴頭14之狹縫14a被供給至製程空間17。亦即，從歧管50提供的氣體藉由淋浴頭14被導引至基板之上。氣體之電漿藉由淋浴頭14及被施加功率(power)的載臺16之間的電場而產生，且載臺16上的基板接受電漿處理(treatment)。用於電漿處理的氣體在平面視角中輻射狀散佈，穿過排氣導管30的狹縫30a且進入環狀通道30b，且從排氣口30c被排放至外部。
根據此操作實例，由於第一氣體及第二氣體在歧管50中充分地彼此混合，舉例來說，前驅物濃度可變得更均勻。所以，舉例來說，可改善形成在基板上的膜之膜厚度分佈。
第6圖為顯示歧管之另一配置實例的立體圖。第一進給管54A及第二進給管56A在從氣體導引部分52之中心偏移的方向進給氣體。根據一實例，當從負z方向觀察時，第一進給管54A提供氣體至y座標值小於氣體導引部分52之中心的y座標值的位置；且第二進給管56A提供氣體至y座標值大於氣體導引部分52之中心的y座標值的位置。舉例來說，第一進給管54A及第二進給管56A係以彼此平行的方式被提供，且在平面視角中氣體導引部分52之中心插入在第一進給管54A及第二進給管56A之間。
第7圖顯示第6圖的歧管之中的氣體流動。藉由提供如上述之第一進給管54A及第二進給管56A，有可能在氣體導引部分52及管狀部分51之間產生渦流，如箭頭所示。此渦流促進第一氣體及第二氣體的混合。
第8圖為顯示歧管之另一配置實例的立體圖。第8圖的歧管與第6圖的歧管相似，但與第6圖的歧管不同的是其中當第一進給管54B及第二進給管56B愈靠近管狀部分51，就愈遠離腔室12。亦即，第一進給管54B及第二進給管56B的z座標值隨著靠近管狀部分51而變大。換句話說，第一進給管54B及第二進給管56B相對於管狀部分51的側壁之法線向下傾斜。此傾斜增大在管狀部分51中藉由第一氣體及第二氣體產生的渦流之速度，使得第一氣體及第二氣體的混合更被促進。
第9圖為歧管之另一配置實例的立體圖。第9圖的歧管與第2圖的歧管相似，但與第2圖的歧管不同的是其中當第一進給管54C及第二進給管56C愈靠近管狀部分51，就愈遠離腔室12。在此配置中，第一氣體及第二氣體在遠離腔室12的方向劇烈地(vigorously)前進而進入管狀部分51，使得第一氣體及第二氣體的混合被促進。
第10圖為顯示歧管之另一配置實例的立體圖。內管52B的側表面形成為平面。舉例來說，內管52B具有四個平面作為側表面。組成側表面的平面數量可被設定為3或為5或更多。
第11圖為歧管之另一配置實例的立體圖。在z方向上延伸的狹縫52b被形成在內管52B的側表面。狹縫52b的數量並無限制於特定數量。
第12圖為顯示歧管種類與從歧管提供的氣體之均勻度之間的關係的圖表。縱坐標軸表示在開口52a(歧管之出口)之氣體的均勻度。縱坐標軸可說是表示在開口52a的各個位置，氣體濃度變化的程度。當「均勻度值」越小，氣體的均勻度越高。
總共量測了八個歧管的氣體均勻度。左側的七個結果係藉由使用第8圖所示的具有第一進給管54B及第二進給管56B的歧管而獲得。最右端的結果係藉由使用第6圖所示的具有第一進給管54A及第二進給管56A的歧管而獲得。橫坐標軸所示的數值表示內管52B的高度z1。左側的五個數據係藉由使用第2圖所示的圓柱狀內管52B而獲得。標記為「矩形」的數據係藉由使用第10圖所示的內管52B而獲得。標記為「狹縫」的數據係藉由使用第11圖所示的內管52B而獲得。除了標記為「矩形」的數據之外，內管52B及管狀部分51之間的距離x3等於25毫米。
舉例來說，從左側數來第四個標記為「60毫米」的數據係藉由使用具有距離x3為25毫米且高度z1為60毫米的歧管而獲得。並且，從左側數來第五個標記為「70毫米」的數據係藉由使用具有距離x3為25毫米且高度z1為70毫米的歧管而獲得。氣體的擴散依距離x3及高度z1之比例而被促進或被抑制。
第12圖的各個數據係在氧氣及氮氣以1×10-4 公斤/秒的流率(flow rate)從第一進給管及第二進給管各自被進給至管狀部分51之中的情況下而獲得，歧管中的壓力設定為400帕，且歧管溫度設定為80℃。
從第12圖的數據可發現，內管52B的高度z1愈高，氣體均勻度可提高愈多。尤其，z1設定為60毫米以上或70毫米以上可帶來明顯改善均勻度的效果。顯然的是，歧管中渦流的形成特別有效，因為兩個標記為「70毫米」的數據都帶來充分小的均勻度值。
如上所述，具有極佳均勻度的氣體有可能被提供，藉由將歧管的下方部分配置為雙管結構，此結構一旦向上導引氣體，就接著使氣體從中心的孔洞向下流動。連接氣體進給管有可能有多種方法。
10:基板處理裝置 12:腔室(反應器腔室) 14:淋浴頭 14a,30a,52b:狹縫 16:載臺 17:製程空間 18:滑動軸 20:絕緣部 22:第二氣體源 30:排氣導管 30b:環狀通道 30c:排氣口 31,34:O型環 32:載體氣體源 40:第一氣體源 41:氣體排氣部分 42,V1,V3,Va:閥 44:真空泵 50:歧管 51:管狀部分 52:氣體導引部分 52A:底板部分 52a:開口 52B:內管 54,54A,54B,54C:第一進給管 56,56A,56B,56C:第二進給管 58:閘閥 59:遠端電漿單元 a1,a2,a3,a4:箭頭 x1,x2:直徑 x3:距離 z1,z2:高度
第1圖為顯示基板處理裝置之實例的剖面圖。 第2圖為顯示歧管之實例的立體圖。 第3圖為顯示歧管之實例的底面圖。 第4圖為顯示歧管之實例的立體圖。 第5圖為例示氣體流動的剖面圖。 第6圖為顯示歧管之另一實例的立體圖。 第7圖顯示歧管之中的氣體流動。 第8圖為顯示歧管之另一實例的立體圖。 第9圖為歧管之另一實例的立體圖。 第10圖為顯示歧管之另一實例的立體圖。 第11圖為歧管之另一實例的立體圖。 第12圖為顯示從各個歧管提供的氣體之均勻度的圖表。
10:基板處理裝置
12:腔室(反應器腔室)
14:淋浴頭
14a,30a:狹縫
16:載臺
17:製程空間
18:滑動軸
20:絕緣部
22:第二氣體源
30:排氣導管
30b:環狀通道
30c:排氣口
31,34:O型環
32:載體氣體源
40:第一氣體源
41:氣體排氣部分
42,V1,V3,Va:閥
44:真空泵
50:歧管
51:管狀部分
52:氣體導引部分
54:第一進給管
56:第二進給管
58:閘閥
59:遠端電漿單元

Claims (14)

  1. 一種基板處理裝置，包括： 一腔室； 一歧管，包括一管狀部分、一第一進給管、一第二進給管以及一氣體導引部分；該管狀部分被提供在該腔室上方；該第一進給管被提供在該管狀部分之一側表面上；該第二進給管被提供在該管狀部分之該側表面上；複數氣體從該第一進給管及該第二進給管被進給，該氣體導引部分係配置以一旦在與該腔室相反的方向導引該等氣體至該管狀部分之中，就接著進給該等氣體至該腔室之中； 一第一氣體源，配置以供給氣體至該第一進給管之中；以及 一第二氣體源，配置以供給氣體至該第二進給管之中。
  2. 如申請專利範圍第1項所述之基板處理裝置，更包括： 一載臺，被提供在該腔室中；以及 一淋浴頭，被提供在該腔室中且配置以導引從該歧管提供之該氣體至該載臺之上。
  3. 如申請專利範圍第1項所述之基板處理裝置，其中該氣體導引部分包括一底板部分以及一內管；該底板部分之一中心具有一開口，且該底板部分具有與該管狀部分接觸的一外緣；該內管具有與該底板部分接觸的一底部表面。
  4. 如申請專利範圍第1項所述之基板處理裝置，其中該第一進給管係配置以進給氣體至該氣體導引部分之一中心，且該第二進給管係，配置以在與該第一進給管之一氣體進給方向徑向相反的方向，進給氣體至該氣體導引部分之該中心。
  5. 如申請專利範圍第4項所述之基板處理裝置，其中該第一進給管及該第二進給管係在平面視角中之一直線上彼此對齊。
  6. 如申請專利範圍第1項所述之基板處理裝置，其中該第一進給管及該第二進給管在從該氣體導引部分之一中心偏移的方向，進給氣體以在該氣體導引部分及該管狀部分之間產生一渦流。
  7. 如申請專利範圍第6項所述之基板處理裝置，其中該第一進給管及該第二進給管係彼此平行，且在平面視角中該氣體導引部分之該中心介於該第一進給管及該第二進給管之間。
  8. 如申請專利範圍第1項所述之基板處理裝置，其中當該第一進給管及該第二進給管愈靠近該管狀部分，該第一進給管及該第二進給管愈遠離該腔室。
  9. 如申請專利範圍第3項所述之基板處理裝置，其中該內管之一高度係不小於該內管及該管狀部分之間的距離的2.4倍。
  10. 如申請專利範圍第3項所述之基板處理裝置，其中該內管之一高度係不小於該內管及該管狀部分之間的距離的2.8倍。
  11. 如申請專利範圍第3項所述之基板處理裝置，其中該內管係配置為一圓柱形。
  12. 如申請專利範圍第3項所述之基板處理裝置，其中該內管之一側表面為一曲面。
  13. 如申請專利範圍第3項所述之基板處理裝置，其中該內管之一側表面為一平面。
  14. 如申請專利範圍第1項所述之基板處理裝置，其中該第一氣體源及該第二氣體源係配置以提供不同氣體。
TW108134349A 2018-10-11 2019-09-24 基板處理裝置 TW202043536A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US16/157,303 2018-10-11
US16/157,303 US11118262B2 (en) 2018-10-11 2018-10-11 Substrate processing apparatus having a gas-mixing manifold

Publications (1)

Publication Number Publication Date
TW202043536A true TW202043536A (zh) 2020-12-01

Family

ID=70161745

Family Applications (1)

Application Number Title Priority Date Filing Date
TW108134349A TW202043536A (zh) 2018-10-11 2019-09-24 基板處理裝置

Country Status (5)

Country Link
US (1) US11118262B2 (zh)
JP (1) JP7479808B2 (zh)
KR (1) KR20200041778A (zh)
CN (1) CN111041454A (zh)
TW (1) TW202043536A (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230170130A (ko) * 2018-12-20 2023-12-18 어플라이드 머티어리얼스, 인코포레이티드 개선된 가스 유동을 처리 챔버의 처리 용적에 공급하기 위한 방법 및 장치
US11236424B2 (en) * 2019-11-01 2022-02-01 Applied Materials, Inc. Process kit for improving edge film thickness uniformity on a substrate
US20210381107A1 (en) * 2020-06-03 2021-12-09 Micron Technology, Inc. Material deposition systems, and related methods and microelectronic devices
JP7378357B2 (ja) * 2020-06-17 2023-11-13 東京エレクトロン株式会社 基板処理装置およびガス供給配管のパージ方法
WO2024076478A1 (en) * 2022-10-06 2024-04-11 Lam Research Corporation Showerhead gas inlet mixer

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030019428A1 (en) * 2001-04-28 2003-01-30 Applied Materials, Inc. Chemical vapor deposition chamber
JP2003124125A (ja) 2001-10-12 2003-04-25 Applied Materials Inc 半導体製造装置
US7780789B2 (en) * 2001-10-26 2010-08-24 Applied Materials, Inc. Vortex chamber lids for atomic layer deposition
EP1420080A3 (en) * 2002-11-14 2005-11-09 Applied Materials, Inc. Apparatus and method for hybrid chemical deposition processes
WO2004073850A1 (en) * 2003-02-14 2004-09-02 Tokyo Electron Limited Gas feeding apparatus
US9327252B2 (en) * 2013-03-15 2016-05-03 Applied Materials, Inc. Compact device for enhancing the mixing of gaseous species
US10683571B2 (en) 2014-02-25 2020-06-16 Asm Ip Holding B.V. Gas supply manifold and method of supplying gases to chamber using same
US9284644B2 (en) * 2014-02-27 2016-03-15 Lam Research Corporation Apparatus and method for improving wafer uniformity
US9951421B2 (en) * 2014-12-10 2018-04-24 Lam Research Corporation Inlet for effective mixing and purging
EP3302810A4 (en) 2015-06-01 2018-12-19 Cetamax Ventures Ltd. Systems and methods for processing fluids
CN108348933B (zh) * 2015-08-28 2022-01-28 明尼苏达州大学董事会 喷嘴和混合流体流的方法
JP2017148766A (ja) 2016-02-26 2017-08-31 住友重機械エンバイロメント株式会社 混合撹拌装置
JP6792786B2 (ja) * 2016-06-20 2020-12-02 東京エレクトロン株式会社 ガス混合装置および基板処理装置

Also Published As

Publication number Publication date
US11118262B2 (en) 2021-09-14
JP2020061549A (ja) 2020-04-16
JP7479808B2 (ja) 2024-05-09
KR20200041778A (ko) 2020-04-22
US20200115797A1 (en) 2020-04-16
CN111041454A (zh) 2020-04-21

Similar Documents

Publication Publication Date Title
TW202043536A (zh) 基板處理裝置
US20200149166A1 (en) Flow control features of cvd chambers
CN109075023B (zh) 用于提供均匀流动的气体的设备和方法
KR102396162B1 (ko) 막 프로파일 조정을 위한 샤워헤드 커튼 가스 방법 및 시스템
US10266945B2 (en) Gas mixing device and substrate processing apparatus
TWI683026B (zh) 氣體供應歧管及使用其供應氣體至室之方法
US5453124A (en) Programmable multizone gas injector for single-wafer semiconductor processing equipment
US20130306758A1 (en) Precursor distribution features for improved deposition uniformity
TWI612174B (zh) 化學氣相沉積設備、設備、以及化學氣相沉積之方法
CN112673461A (zh) 用于多流前驱物剂量的装置
KR20190095549A (ko) 균일한 가스 유동을 제공하기 위한 장치 및 방법
US20120135609A1 (en) Apparatus and Process for Atomic Layer Deposition
CN112105759B (zh) 用于cvd腔室的气体箱
CN110904438A (zh) 用于多种化学源之气体分配装置
JP2024007511A (ja) クロスフローを有する複数の基板を処理するための半導体処理装置
CN115386860A (zh) 进气装置及半导体工艺腔室