TWI683026B - 氣體供應歧管及使用其供應氣體至室之方法 - Google Patents

氣體供應歧管及使用其供應氣體至室之方法 Download PDF

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TWI683026B
TWI683026B TW104105533A TW104105533A TWI683026B TW I683026 B TWI683026 B TW I683026B TW 104105533 A TW104105533 A TW 104105533A TW 104105533 A TW104105533 A TW 104105533A TW I683026 B TWI683026 B TW I683026B
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gas
feed
tubular
manifold
injection ports
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魯西亞Ｃ 傑迪拉
赫伯 特荷斯特
麥可 賀賓
卡爾 懷特
泰德 羅伯 唐
艾瑞克 謝洛
梅爾文 維巴斯
克里斯多夫 烏斯特
凱利 方杜拉利亞
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美商Ａｓｍ Ｉｐ控股公司
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Abstract

一種用於晶圓處理反應器之氣體入口系統包括：經調適以連接至該晶圓處理反應器之一氣體入口埠之一管狀氣體歧管；及氣體饋送，其包括用於饋送第一氣體進入該管狀氣體歧管之第一饋送及用於饋送第二氣體進入該管狀氣體歧管之第二饋送。每一饋送具有在該管狀氣體歧管之第一軸位置處連接至該管狀氣體歧管之二或多個注入埠，且每一該等氣體饋送之該等注入埠係在該第一軸位置處沿著該管狀氣體歧管之圓周均勻地分佈。

Description

氣體供應歧管及使用其供應氣體至室之方法
本發明一般而言係關於一種氣體供應歧管及用於供應氣體之方法，特定而言係關於均勻地供應多種氣體至一處理室中之彼等者。
作為在諸如一半導體晶圓之一基板上沈積一膜之方法，諸如電漿增強ALD(PEALD)及熱ALD之原子層沈積法(ALD)係為人所熟知的。在ALD中，由於通常使用多種氣體，需要分離之氣體線路來傳送用於ALD反應器之處理氣體。每一氣體線路經由一歧管連接至一反應室(RC)。然而，該等分離之氣體線路造成晶圓上不佳的均勻性，此係由於氣體在進入該反應室時未充份混合。該反應室上游之氣體的均勻性影響晶圓上膜之平面內均勻性。儘管目前通常使用300-mm之反應器(即，處理300-mm晶圓之反應器)，為了高產量及生產力，已開始使用450-mm反應器。然而，在450-mm反應器中均勻性變得更差。
任何涉及相關技術之問題及解決方案之討論已包括在本揭露中，其僅用於提供本發明之內容，且不應視為承認在作出本發明時知曉任何或全部討論。
根據一些實施例之目標係提供一氣體混合系統，其改善在進入反應室之前多種氣體的混合。在一些實施例中，在反應室上游提供之管狀氣體歧管中提供用於每一氣體之多重注入埠，其中該等多重注入埠係沿著該管狀氣體歧管之軸以相同高度連接於該管狀氣體歧管，且每一氣體分配進該等多重注入埠中並在該管狀氣體歧管內以相同高度分佈。該等多重注入埠可減少用於氣體擴散之時間尺度，藉此改善氣體之混合。
在一些實施例中，用於每一氣體之多重注入埠係在反應室上游提供之管狀氣體歧管中提供，其中該等多重注入埠以相對於該管狀氣體歧管之軸之一角度連接於該管狀氣體歧管，該角度係取決於製程條件而設定以調整在該管狀氣體歧管內之氣體濃度分佈，藉此改善氣體之混合。例如，對於其中氣體水平地自該反應器之一側流向該反應器之另一側之450-mm反應器之製程條件，可對於第一來源氣體以約20°±5°及對於第二來源氣體以約0°將氣體注入該管狀氣體歧管中，及對於其中氣體垂直地且軸向地自頂部流向該反應器周圍之450-mm反應器之製程條件，可以約90°將氣體注入該管狀氣體歧管中。
在一些實施例中，用於每一氣體之多重注入埠係在反應室上游提供之管狀氣體歧管中提供，其中用於第一氣體之該等多重注入埠及用於第二氣體之該等多重注入埠係沿著該管狀氣體歧管之軸以不同高度連接於該管狀氣體歧管，其中上方注入埠就該等埠之角度、該等埠之直徑等而言與下方注入埠之設置不同，藉此改善氣體之混合。
在一些實施例中，用於每一氣體之多重注入埠係在反應室上游提供之管狀氣體歧管中提供，其中該等多重注入埠係以遠離該反應器之 一距離連接於該管狀氣體歧管，該距離係足夠長以使混合良好。例如，對於450-mm反應器，在提供該等注入埠處之一點與該管狀氣體歧管之下方末端之間的最小長度可係約115mm。
在一些實施例中，用於每一氣體之多重注入埠係在反應室上游提供之管狀氣體歧管中提供，其中在該管狀氣體歧管之頂部另外提供一頂部注入部，其中控制來自該頂部注入埠之氣體流，藉此改善氣體之混合。
基於總結本發明之態樣及優於相關技術所達成之優點的目的，在本揭露中描述本發明之某些目的及優點。當然，應了解根據本發明之任何特定實施例可不必達成所有此等目標或優點。因此，例如，熟悉此技術之人士將認知本發明可以達到或最佳化本文教示之一優點或一群優點之方式下體現或進行，而不必達成如可在本文教示或建議之其它目標或優點。
本發明之其它態樣、特徵、及優點由以下實施方式將變得顯而易見。
1‧‧‧氣體混合系統
2‧‧‧注入埠
3‧‧‧注入埠
4‧‧‧注入埠
5‧‧‧注入埠
6‧‧‧注入埠
7‧‧‧注入埠
8‧‧‧頂部注入埠
9‧‧‧管狀氣體歧管
10‧‧‧下方末端
21‧‧‧氣體混合系統
22‧‧‧注入埠
23‧‧‧注入埠
24‧‧‧注入埠
25‧‧‧注入埠
26‧‧‧管狀氣體歧管
31‧‧‧氣體入口系統
32‧‧‧管狀氣體歧管
33‧‧‧第一饋送
33a‧‧‧第一入口
34‧‧‧第二饋送
34a‧‧‧第二入口
35‧‧‧第三饋送
35a‧‧‧第三入口
36‧‧‧第四饋送
36a‧‧‧第四入口
37‧‧‧頂部饋送/頂部注入埠
38‧‧‧第二C形分配通道
39‧‧‧第四C形分配通道
40a-40e‧‧‧第一多重出口
41a-41e‧‧‧第二多重出口
42a-42e‧‧‧第三多重出口
43a-43e‧‧‧第四多重出口
44‧‧‧第三C形分配通道
46‧‧‧第一C形分配通道
47a-47e‧‧‧連接點
48a-48e‧‧‧連接點
51‧‧‧第一軸位置
52‧‧‧第二軸位置
151‧‧‧黑點/氣體入口埠
152‧‧‧圓/淋洗頭
171‧‧‧注入口凸緣
172‧‧‧排出口凸緣
173‧‧‧下方燈陣列
174‧‧‧上方燈陣列
175‧‧‧照射窗玻璃
176‧‧‧基板
177‧‧‧基座
178‧‧‧氣體入口埠
179‧‧‧製程室/反應室
180‧‧‧內部
200‧‧‧氣體入口埠
241‧‧‧基板
242‧‧‧導電平板電極/下方電極
243‧‧‧反應室
244‧‧‧導電平板電極/上方電極
245‧‧‧RF功率源
246‧‧‧排氣口
251‧‧‧內部
252‧‧‧電接地
264‧‧‧密封氣體流控制器
290‧‧‧RF功率源
本專利或申請書檔案包含至少一個以彩色實行之圖式。具彩色圖式之本專利或專利申請書公開案之複本將在請求並給付必要費用下由當局提供。
本發明之此等及其它特徵現將參考較佳實施例之圖示描述，該等較佳實施例係意欲說明而非限制本發明。該等圖式基於說明性目的而大幅地簡化且不必按比例繪製。
圖1係顯示根據本發明之一實施例之一氣體混合系統的示 意圖。
圖2係顯示根據本發明之另一實施例之一氣體混合系統的示意圖。
圖3係顯示根據本發明之再另一實施例之一氣體混合系統的示意圖。
圖4係顯示根據本發明之一實施例之圖3所繪示之該氣體混合系統之氣體注入埠的示意圖。
圖5顯示使用計算流體力學(CFD)模擬(ANSYS Fluent)所得之一影像，其表示根據本發明之一實施例之圖3所繪示之一氣體混合系統之壁上的氣體濃度，其中該等色彩表示轉譯處理氣體種類之濃度之處理氣體莫耳分率之範圍，在藍色至紅色的標度中，藍色表示無氣體種類，而紅色表示高濃度之氣體種類。
圖6A顯示使用計算流體力學(CFD)模擬所得之一影像，其表示根據本發明之一實施例在管狀歧管之下方末端處所得之在一管狀歧管之橫截面上的氣體濃度，其中對於置放在相同高度之每一第一及第二饋送以20°之角度提供三個氣體注入埠。
圖6B顯示使用計算流體力學(CFD)模擬所得之一影像，其表示根據本發明之另一實施例在管狀歧管之下方末端處所得之在一管狀歧管之橫截面上的氣體濃度，其中對於置放在相同高度之每一第一及第二饋送以20°之角度提供五個氣體注入埠。
圖7A顯示使用計算流體力學(CFD)模擬所得之一影像，其表示根據本發明之一實施例在管狀歧管之下方末端處所得之在一管狀歧管 之橫截面上的氣體濃度，其中對於置放在相同高度之每一第一及第二饋送以25°之角度提供五個氣體注入埠。
圖7B顯示使用計算流體力學(CFD)模擬所得之一影像，其表示根據本發明之再另一實施例在管狀歧管之下方末端處所得之在一管狀歧管之橫截面上的氣體濃度，其中對於置放在相同高度之每一第一及第二饋送以15°之角度提供五個氣體注入埠。
圖8A顯示使用計算流體力學(CFD)所得之一影像，其表示類似於根據本發明之一實施例之圖3所繪示者之一氣體混合系統之壁上的氣體濃度，其中一處理氣體自置放於該管狀氣體歧管之下方軸位置處之氣體注入埠引入。
圖8B顯示使用計算流體力學(CFD)模擬所得之一影像，其表示根據圖8A繪示之實施例在該管狀歧管之下方末端處所得之在一管狀歧管之橫截面上的氣體濃度。
圖9A顯示使用計算流體力學(CFD)所得之一影像，其表示類似於根據本發明之一實施例之圖3所繪示者之一氣體混合系統之壁上的氣體濃度，其中一處理氣體自置放於該管狀氣體歧管之上方軸位置處之氣體注入埠引入。
圖9B顯示使用計算流體力學(CFD)模擬所得之一影像，其表示根據圖9A繪示之實施例在該管狀歧管之下方末端處所得之在一管狀歧管之橫截面上的氣體濃度。
圖10顯示使用計算流體力學(CFD)模擬所得之一影像，其表示根據圖9A繪示之實施例在該管狀歧管中間所得之在一管狀歧管之橫 截面上的氣體濃度。
圖11A顯示使用該計算流體力學(CFD)所得之一影像，其表示根據本發明之一實施例之類似具有一螺旋設計之一氣體混合系統之壁上的氣體濃度，其中一處理氣體自置放於該管狀氣體歧管之下方軸位置處之氣體注入埠引入。
圖11B顯示使用計算流體力學(CFD)模擬所得之一影像，其表示根據圖11A繪示之實施例在該管狀歧管之下方末端處所得之在一管狀歧管之橫截面上的氣體濃度。
圖12A及圖12B顯示使用計算流體力學(CFD)模擬所得之影像，其表示根據本發明之一實施例在該管狀歧管之下方末端處所得之類似於圖3所繪示者之一管狀歧管之橫截面上的氣體濃度，其中乾氣體自上方注入埠以0.24slm(圖12A)及0.72slm(圖12B)沿該管狀氣體歧管之軸方向排進該管狀氣體歧管中。
圖13顯示使用計算流體力學(CFD)模擬所得之一影像，其表示根據本發明之一實施例在該管狀歧管之下方末端處所得之類似於圖3所繪示者之一管狀歧管之橫截面上的氣體濃度，其中乾氣體自下方埠以0.54slm排進該管狀氣體歧管中。
圖14顯示使用計算流體力學(CFD)模擬所得之一影像，其表示在用於450-mm單晶圓處理反應器之一習知淋洗頭之壁上的氣體濃度。
圖15顯示一管狀歧管之截面，當(A)該等注入埠沿一內壁定位時，(B)該等注入埠位於該中央與該內壁之間之中途處時，及(C)該等注入埠位於該中央處時，其圖解地說明自注入埠至擴散點之距離。
圖16係一電漿輔助沈積裝置之一示意圖，其中調適根據一實施例之一管狀氣體歧管以貼附至該裝置之一製程室之一中央氣體埠上。
圖17係一UV輔助沈積裝置之一示意圖，其中調適根據一實施例之一管狀氣體歧管以貼附至該裝置之一製程室之一側氣體埠上。
在本揭露中，「氣體」可包括蒸發固體及/或液體，且可由單一氣體或氣體混合物構成。同樣地，冠詞「一」或「一種」係指一種類或包括多種類之屬。在本揭露中，經由該管狀氣體歧管引入反應室之一氣體可包含、基本上由其組成、或由其組成：一處理氣體，其係選自由前驅物、反應物氣體、及添加劑氣體(例如：NH3、TiCl4、O3)組成之群之至少一反應氣體，以及一乾氣體，其係選自由稀釋氣體、沖洗氣體、及載體氣體(例如：諸如氬(Ar)、氦(He)、氖(Ne)、氪(Kr)、或氙(Xe)之稀有氣體、諸如氮(N2)、氫(H2)、氧(O2)之其它惰性氣體)組成之群之至少一惰性氣體。該添加劑氣體包括用於在一反應室中氧化、碳化、及/或氮化該前驅物之一氣體。可用載體氣體引入該前驅物。除處理氣體及乾氣體外之氣體(即未通過該管狀氣體歧管引入之氣體)可用於例如密封反應空間，其包括一密封氣體。可獨立地選擇該稀釋氣體、沖洗氣體、載體氣體、及密封氣體。該乾氣體及該處理氣體在一反應器上游之該管狀氣體歧管中混合，使得該乾氣體及該處理氣體在該管狀氣體歧管中係非反應性或非明顯反應性(反應最小化)。例如，O3分解，但在某些條件下，分解率低且其壽命夠長以到達反應室區段，使得可使用O3作為一處理氣體。此外，在本揭露中，任何二個數目之變數可構成變數之可作用範圍，而可作用範圍可基於例行工作確定，且所指出之任 何範圍可包括或排除端點。此外，任何所指出之變數之值可係指精確值或近似值，且包括等效值，且在某些實施例中可指平均值、中值、代表值、多數等。此外，在本揭露中，該反應室包括(但不限於)單室與雙室，且通常係特定用於處理450-mm晶圓之一單晶圓處理室。並且，為縮小裝置尺寸，該等所揭示之組態或其變體可應用在用於處理300-mm晶圓之一單晶圓處理室或任何其它合適之室中。
在其中未具體指明條件及/或結構之本揭露中，熟悉本技術者考量本揭露可容易地提供此等條件及/或結構作為例行實驗事項。
在所有所揭露之實施例中，任何在實施例中所用之元件可以用於所需目的之其任何等效元件替代，包括本文明確地、必要地、或本質上地揭露者。進一步地，本發明可同樣地應用在裝置及方法中。
在此揭露中，任何所定義之意義不必排除在某些實施例中之普通及習知之意義。
該等實施例將就較佳實施例說明。然而，本發明不限於該等較佳實施例。
在某些實施例中，用於一晶圓處理反應器之一氣體入口系統包含：(i)一管狀氣體歧管，其經調適以連接至用於將在將該管狀氣體歧管中混合之一氣體供應至該晶圓處理反應器之該晶圓處理反應器之一氣體入口埠；及(ii)氣體饋送，其包含用於將第一氣體饋入該管狀氣體歧管之第一饋送及用於將第二氣體饋入該管狀氣體歧管之第二饋送，每一饋送具有在該管狀氣體歧管之第一軸位置處連接至該管狀氣體歧管之二或多個注入埠，其中每一該等氣體饋送之注入埠係在該第一軸位置處沿該管狀氣體歧 管圓周均勻地分佈。術語「均勻地分佈」係指沿該圓周以實質上相同間隔分佈或使用沿該圓周之一重覆分佈圖案分佈。該管狀氣體歧管具有一軸，且該軸位置係以沿該軸由該管狀氣體歧管之下方末端至一軸點之距離界定且包括在通過該軸點並垂直於該管狀氣體歧管之軸之平面上之任何點。在該第一軸位置處之該管狀氣體歧管之圓周係曝露於該管狀氣體歧管之內部之圓周。每一該等氣體饋送之注入埠係在第一軸位置處沿該圓周均勻分佈，即，每一氣體饋送之該等埠之中心係在第一軸位置以實質上相同間隔沿該圓周置放。該氣體饋送係以一氣體管線界定，即，該第一氣體饋送及該第二氣體饋送係連接至不同且分離之氣體管線，其每一者可獨立地或不同地控制。在某些實施例中，該管狀氣體歧管經調適以直接連接至該晶圓處理反應器之一氣體入口埠，即，在無任何流動控制裝置(諸如一自動壓力調節器或質量流控制器)下連接。在某些實施例中，該等注入埠係直接固定地連接至該管狀氣體歧管。
在某些實施例中，該第一饋送之該等注入埠之數目與該第二饋送之該等注入埠之數目相同，且該第一饋送之該等注入埠與該第二饋送之該等注入埠係沿著該管狀氣體歧管之圓周交替地置放。或者，該第一饋送之注入埠之數目及該第二饋送之注入埠之數目不同。較佳地，所有該等注入埠係沿著該圓周以實質上相同之間隔置放。在某些實施例中，每一饋送之該注入埠之數目係二至十，較佳地係四至八。
在某些實施例中，該第一饋送進一步包括具有分別連接至該第一饋送之二或多個注入埠之用於該第一氣體之流入之一入口及用於該第一氣體之流出之多個出口的一C形共用通道，且該第二饋送進一步包括具 有分別連接至該第二饋送之二或多個注入埠之用於該第二氣體之流入之一入口及用於該第二氣體之流出之多個出口的一C形共用通道。該等C形共同通道圍繞該管狀氣體歧管。在某些實施例中，該第一饋送之C形共用通道及該第二饋送之C形共用通道係同心地位於與該管狀氣體歧管之軸垂直之相同平面上，其中該第一饋送之C形共用通道具有大於該第二饋送之C形共用通道之直徑，其中該第一饋送之C形共用通道之多個出口係連接於該C形共用通道之內部圓周，而該第二饋送之C形共用通道之多個出口係連接至該C形共用通道之外部圓周，使得用於該等第一及第二饋送兩者之多個出口可具有相同長度且可以相對於該管狀氣體歧管之軸以相同之角度連接至該管狀氣體歧管。
或者，該C形可係圍繞該管狀氣體歧管之完整圓形。
在某些實施例中，每一饋送之注入埠以相對於該管狀氣體歧管之軸約0°至約90°，較佳地以0°至約45°之角度連接至該管狀氣體歧管。在某些實施例中，每一饋送之該等注入埠以相對於該管狀氣體歧管之軸約90°之角度連接至該管狀氣體歧管。該角度取決於該反應室之類型，例如淋洗頭型(氣體徑向地流至一晶圓之外圓周)或橫流型(氣體由一晶圓之一側流向該晶圓之另一側)，且亦取決於該等製程條件、該等埠之直徑、及該歧管之直徑，並另外取決於是否提供一頂部注入埠。例如，對於450-mm晶圓之淋洗頭型反應器(例如EmerALD®，其可用於ALD並具有位於該反應器上方連接至一遠端電漿之一相對小淋洗頭)，該角度可係約15°至約25°，及例如對於另一450-mm晶圓之淋洗頭型反應器(例如Eagle®，其可用於電漿增強ALD並具有多個獨立室)，該角度可係約90°。
在某些實施例中，該管狀氣體歧管在該第一軸位置下游具處具有一第一直徑，且在該第一軸位置處具有一第二直徑，所述第二直徑小於第一直徑，使得該等注入埠例如可以相對於該管狀氣體歧管之軸約0°至約45°之角度連接至該管狀氣體歧管。在某些實施例中，第一直徑(內徑)係約14mm±50%，且第二直徑(內徑)係約10mm±50%。在某些實施例中，每一注入埠之內徑(其通常相等於該等多個出口之內徑)係約3mm±50%。
在某些實施例中，該第一饋送連接至提供諸如一處理氣體(例如：金屬有機化合物)之反應氣體之一氣體源，且該第二饋送連接至提供諸如一稀有氣體之乾氣體之一氣體源。
在某些實施例中，該等氣體饋送作為下方氣體饋送，且該氣體入口系統進一步包含上方氣體饋送，該上方氣體饋送包含用於將一第三氣體饋入該管狀氣體歧管之一第三饋送，及用於將一第四氣體饋入該管狀氣體歧管之一第四饋送，每一該等上方氣體饋送具有在該管狀氣體歧管之一第二軸位置處連接至該管狀氣體歧管之二或多重注入埠，該第二軸位置位於該第一軸位置之上游。
在某些實施例中，該管狀氣體歧管在該第一軸位置下游具有一第一直徑，在該第一軸位置處具有一第二直徑，且在第二軸位置處具有一第三直徑，該第三直徑小於該第二直徑，該第二直徑小於該第一直徑，使得該等第三及第四饋送之注入埠例如可以相對於該管狀氣體歧管之軸約0°至約45°之角度連接至該管狀氣體歧管。在某些實施例中，第三直徑(內徑)係約6mm±50%。
在某些實施例中，每一該等第三與第四饋送之該等注入埠以 相對於該管狀氣體歧管之軸約0°至約90°，較佳地0°至約45°之角度連接至該管狀氣體歧管。在某些實施例中，每一該等第三與第四饋送之注入埠大致平行於該管狀氣體歧管之軸(以約0°至約5°之角度)連接至該管狀氣體歧管，且每一該等第一與第二饋送之注入埠係以相對於該管狀氣體歧管之軸約15°至約25°之角度連接至該管狀氣體歧管。在某些實施例中，該等第三與第四饋送之注入埠之數目係二至十，較佳地係四至八。在某些實施例中，每一該等第三與第四饋送之注入埠之數目係等於或少於每一該等第一及第二饋送之注入埠之數目。在某些實施例中，在第一軸位置與第二軸位置之間之距離係約30mm±50%。在某些實施例中，在第一軸位置與該管狀氣體歧管之下方末端之間之長度係約115mm±50%。
在某些實施例中，該第三饋送進一步包括具有分別連接至該第三饋送之二或多個注入埠之用於該第三氣體之流入之一入口及用於該第三氣體之流出之多個出口的一C形共用通道，且該第四饋送進一步包括具有分別連接至該第四饋送之二或多個注入埠之用於該第四氣體之流入之一入口及用於該第四氣體之流出之多個出口的一C形共用通道。該C形共同通道圍繞該管狀氣體歧管。或者，該C形可係圍繞該管狀氣體歧管之完整圓形。
在某些實施例中，該氣體入口系統進一步包含用於將一輔助氣體饋入該管狀氣體歧管之一頂部饋送，該頂部饋送具有在該管狀氣體歧管之一上游末端處連接至該管狀氣體歧管之一注入埠。在某些實施例中，該頂部饋送係連接至提供一乾氣體之一氣體源。在某些實施例中，該頂部饋送之注入埠之內徑係約6mm±50%，其係大於其餘饋送之注入埠之內徑。 該管狀氣體歧管、該注入埠等可由諸如鋁合金、不鏽鋼等之任何合適材料製成。
在某些實施例中，該晶圓處理反應器係一用於原子層沈積(ALD)之反應器或一用於化學氣相沈積(CVD)之反應器，且該管狀氣體歧管係連接至用於ALD或CVD之該反應器之一氣體入口埠。此外，該反應器可係用於蝕刻、退火等之一反應器。例如，使用本文揭示之氣體混合系統，對於ALD，可進行一乾氣體及一處理氣體之混合，且對於CVD，可進行不同處理氣體及不同乾氣體之混合。
在某些實施例中，該管狀氣體歧管經調適為位於該晶圓處理反應器之晶圓調節區域上居中之氣體入口埠，該晶圓處理反應器具有淋洗頭型式。
在本發明之另一態樣中，用於使用任何本文所揭示之氣體入口系統將一混合氣體饋入一晶圓處理反應器中之方法包含：(a)將第一氣體經由該第一饋送之注入埠饋入該管狀氣體歧管內，同時將該第二氣體經由該第二饋送之注入埠饋入該管狀氣體歧管內，藉此該第一氣體與第二氣體在該管狀氣體歧管內混合；及(b)將該等混合氣體經由該氣體入口系統饋入該晶圓處理反應器中以在該反應器中裝載之一基板上沈積一膜。
在一些實施例中，該管狀氣體歧管進一步包含具有在該管狀氣體歧管之一上游末端處連接至該管狀氣體歧管之一注入埠之一頂部饋送，其中該方法進一步包含經由該頂部饋送之注入埠將一惰性氣體饋入該管狀氣體歧管，同時將該等第一及第二氣體饋入該管狀氣體歧管，該等第一及第二氣體中之一者係一處理氣體。
在某些實施例中，該膜係在第一條件下沈積，且該方法進一步包含改變來自該頂部饋送之惰性氣體之流速同時維持除該惰性氣體之流速外之該等第一條件，以將一膜沈積在一基板上，該膜相對於在該等第一條件下沈積之該膜之均勻性具有一改良之膜均勻性。
在某些實施例中，該等氣體饋送作為下方氣體饋送，且該氣體入口系統進一步包含上方氣體饋送，其包含一第三饋送及一第四饋送，該等上方氣體饋送之每一者具有在該管狀氣體歧管之一第二軸位置處連接至該管狀氣體歧管之二或多個注入埠，該第二軸位置定位於該第一軸位置之上游，其中該方法進一步包含將一第三氣體及一第四氣體分別經由該等第三饋送及第四饋送之注入埠饋入該管狀氣體歧管，同時將該等第一及第二氣體饋入該管狀氣體歧管，該等第一及第二氣體之一者係處理氣體。
在某些實施例中，該第一饋送之流速總計係約0.1slm至約5.0slm，該第二饋送之流速總計係約0.1slm至約5.0slm，該第三饋送之流速總計係約0.1slm至約5.0slm，且該第四饋送之流速總計係約0.1slm至約5.0slm。
在某些實施例中，該等第一及第二饋送係脈衝式供應，(然而例如，取決於沈積類型，第三及第四饋送係連續地供應)。對於製程溫度可在24℃至約500℃之範圍內之ALD，一個循環之持續時間可在約0.01秒至約10.0秒(例如約0.5秒至約2.0秒)之範圍中。
本發明將參考圖式詳細說明，該等圖式未意欲限制本發明。
圖3係顯示根據本發明之一實施例之一氣體混合系統之示意圖。圖4係顯示根據本發明之一實施例之圖3所繪示之氣體混合系統之 氣體注入埠之示意圖。該氣體入口系統31包含經調適以連接至一晶圓處理反應器之一氣體入口埠之一管狀氣體歧管32；用於饋送第一氣體之一第一饋送33；用於饋送第二氣體之一第二饋送34；用於饋送第三氣體之一第三饋送35；用於饋送第四氣體之一第四饋送36；及用於饋送第五氣體之一頂部饋送37。該第一饋送33包含：一第一入口33a、該第一入口33a所連接之一第一C形分配通道46、及第一多重出口40a、40b、及40e(出口40c及40d在該管狀氣體歧管32後方)，其等自該第一C形分配通道46分別經由連接點47a、47b、及47e(連接點47c及47d在該管狀氣體歧管32後方)延伸，並經由各別第一注入埠連接至該管狀氣體歧管32，該等各別之第一注入埠係在第一軸位置51處連接至該管狀氣體歧管32之各別第一多重出口40a至40e之下方末端。
該第二饋送34包含：一第二入口34a、該第二入口所連接之一第二C形分配通道38、及第二多重出口41a及41e(出口41b、41c及41d在該管狀氣體歧管32後方)，其等自該第二C形分配通道38分別經由連接點48a及48e(連接點48b、48c及48d在該管狀氣體歧管32後方)延伸，並經由各別第二注入埠連接至該管狀氣體歧管32，該等各別之第二注入埠係在第一軸位置51處連接至該管狀氣體歧管32之各別第二多重出口41a至41e之下方末端。
該第一多重出口40a至40e及該第二多重出口41a至41e係以相同間隔圍繞該管狀氣體歧管32之軸交替地置放，即，該等第一注入埠及該等第二注入埠交替且均勻地在第一軸位置51處沿著該管狀氣體歧管32之圓周分佈。由於使用該等第一及第二C形分配通道46、38，該等第一多 重出口40a至40e及該等第二多重出口41a至41e係相對於該管狀氣體歧管32之軸以相同角度(大約20°)連接至該管狀氣體歧管32。
該第三饋送35包含：一第三入口35a、該第三入口35a所連接之一第三C形分配通道44、及第三多重出口42a及42e(出口42b、42c及42d在該管狀氣體歧管32後方)，其等自該第三C形分配通道44分別延伸，並經由各別第三注入埠連接至該管狀氣體歧管32，該等各別之第三注入埠係在第二軸位置52處連接至該管狀氣體歧管32之各別第三多重出口42a至42e之下方末端。
該第四饋送36包含：一第四入口36a、該第四入口36a所連接之一第四C形分配通道39、及第四多重出口43a、43b及43e(出口43c及43d在該管狀氣體歧管32後方)，其等自該第四C形分配通道39分別延伸，並經由各別第四注入埠連接至該管狀氣體歧管32，該等各別之第四注入埠係在第二軸位置52處連接至該管狀氣體歧管32之各別第四多重出口43a至43e之下方末端。
該第三多重出口42a至42e及該第四多重出口43a至43e係以相同間隔圍繞該管狀氣體歧管32之軸交替地置放，即，該等第三注入埠及該等第四注入埠交替且均勻地在第二軸位置52處沿著該管狀氣體歧管32之圓周分佈。由於該等第三及第四C形分配通道44、39係位於不同之軸位置處，該等第三多重出口42a至42e及該等四多重出口43a至43e係以相同角度(即，大約平行於該管狀氣體歧管32之軸)連接至該管狀氣體歧管32。
該頂部注入埠37係連接至該管狀氣體歧管32之頂部。
該頂部注入埠37之內徑大約為6mm，該第一至第四注入 埠之內徑約為3mm，且該第一軸位置51下游之該管狀氣體歧管之內徑約為14mm。由第一軸位置至該管狀氣體歧管之下方末端之長度約為115mm。
圖5顯示使用計算流體力學(CFD)模擬(ANSYS Fluent)所得之一影像，其表示根據本發明之一實施例之圖3所繪示一氣體混合系統之該等內壁上的氣體濃度，其中該等色彩表示轉譯處理氣體種類之濃度之處理氣體莫耳分率之範圍，其中在藍色至紅色的標度中，藍色表示無氣體種類，而紅色表示高濃度之氣體種類。在此實施例中，第一饋送33、第三饋送35、第四饋送36、及頂部饋送37供應氬(Ar)，而第二饋送34供應一處理氣體，其中紅色區域顯示高濃度之處理氣體之氣體種類，藍色區域顯示無濃度之處理氣體之氣體種類，且綠色區域顯示中等濃度之處理氣體之氣體種類。如圖5所示，具高濃度之處理氣體之氣體種類之一氣體存在於包括第二C形分佈通道之第二饋送34之壁上。然而，由於氬氣之一軸向流(該頂部饋送37)及三周向流(第一、第三、及第四饋送33、35、36)以及該處理氣體之一周向流(第二饋送34)之組合，該等氣體於第一軸位置下游立即良好地混和，接著經良好混合之稀釋處理氣體經由該管狀氣體歧管32之下方末端供應至一晶圓處理反應器之氣體入口埠。
圖6A顯示使用計算流體力學(CFD)模擬所得之一影像，其表示根據本發明之一實施例在管狀歧管之下方末端處(即，該反應器區段之入口)所得之在一管狀歧管之橫截面上的氣體濃度。在此實施例中，該氣體混合系統具有如圖3及4所示之組態，但在第一軸位置處對於每一第一及第二饋送以及在第二軸位置處對於每一第三及第四饋送提供三個氣體注入埠。該等氣體以與圖5相同之方式饋送。如圖6A所示，該處理氣體之氣體 種類的濃度在中央及對應於用於第二饋送之注入埠之位置以三個徑向方向自中央至內壁為高，其指出用於每一饋送之三個注入埠之組態可需要較長之氣體擴散時間尺度。由圖6A之分佈圖所計算之氣體混合不均勻性為36.0%。不均勻性(NU)由以下計算：NU=100 x[1-((最大訊號-最小訊號)/(訊號平均值))]
圖6B顯示使用計算流體力學(CFD)模擬所得之一影像，其表示根據本發明之一實施例在管狀歧管之下方末端處(即，該反應器區段之入口)所得之在一管狀歧管之橫截面上的氣體濃度。在此實施例中，該氣體混合系統具有如圖3及4所示之組態(在第一軸位置處對於每一第一及第二饋送以及在第二軸位置處對於每一第三及第四饋送提供五個氣體注入埠)。該等氣體以如圖5之相同方式饋入。如圖6B所示，該處理氣體之氣體種類濃度僅在中央附近為高，其表示用於每一饋送之五個注入埠之組態可明顯減少氣體擴散之時間尺度。由圖6B之分佈圖計算得之氣體混合之不均勻性為3.4%。如可由圖6A及6B所知，多重注入埠可減少氣體擴散之時間尺度，因而改善混合。
圖7A顯示使用計算流體力學(CFD)模擬所得之一影像，其表示根據本發明之一實施例在管狀歧管之下方末端處所得之在一管狀歧管之橫截面上的氣體濃度。在此實施例中，該氣體混合系統具有圖3與4所繪示之組態，但在第一軸位置處對於每一第一及第二饋送以25°之角度(相對於該管狀氣體歧管之軸)提供五個氣體注入埠。該等氣體以與圖5相同之方式饋送。如圖7A所示，該處理氣體之氣體種類的濃度在中央處為高，而該處理氣體之氣體種類的濃度在沿著內壁處為低，其表示對於每一饋送以 25°之角度設置之五個注入埠之組態可適度地減少氣體擴散之時間尺度。由圖7A之分佈圖計算得之氣體混合之不均勻性為10%。
參照圖6B，其顯示氣體混合系統具有如圖3及4所示之組態且在第一軸位置處對每一第一及第二饋送以20°之角度提供三個氣體注入埠之一實施例，當注入埠之角度係20°(氣體混合之不均勻性為3.4%)時，該氣體擴散較以如圖7A所示該等注入埠之角度係25°(氣體混合之不均勻性為10%)時進行更多。
圖7B顯示使用計算流體力學(CFD)模擬所得之一影像，其表示根據本發明之一實施例在管狀歧管之下方末端處所得之在一管狀歧管之橫截面上的氣體濃度。在此實施例中，該氣體混合系統具有圖3與4所繪示之組態，但在第一軸位置處對於每一第一及第二饋送以15°之角度(相對於該管狀氣體歧管之軸)提供五個氣體注入埠。該等氣體以與圖5相同之方式饋送。如圖7B所示，該處理氣體之氣體種類的濃度在沿著內壁處(尤其是實質上對應於該等注入埠之位置之五個點處)為高，而該處理氣體之氣體種類的濃度在中央處為低，其表示對於每一饋送以15°之角度設置之五個注入埠之組態可適度地減少氣體擴散之時間尺度。由圖7B之分佈圖計算得之氣體混合之不均勻性為9.7%。
如可由圖7A、6B、及7B所了解，該等注入埠之定向或角度可影響該等注入埠附近體積上之混合，因此可調節該濃度分佈，其中在中央處較高/較低之濃度可藉由不同角度設定，且對於改善混合之給定製程條件存在一最佳角度。
氣體混合主要藉由氣體擴散實現，故必須將擴散發生之距離 最小化。因此在該歧管圓周均勻分佈之多重注入埠係有效的，從而使圓周距離最小化。此外，為有效混合氣體，需要將擴散發生之徑向距離最小化。圖15顯示管狀歧管之橫截面，其圖解說明當(A)該等注入埠沿內壁定位時，(B)該等注入埠位於中央與內壁之間之中途處時，及(C)該等注入埠位於中央時，自注入埠至擴散點之距離。圖式中黑點151表示相對於表示該管狀氣體歧管之圓周之圓152之注入埠之進入點。在(A)、(B)、及(C)中擴散之徑向距離分別係R(半徑)、R/2、及R。此外，在(A)、(B)、及(C)中擴散之最大距離分別為R、
Figure 104105533-A0202-12-0020-26
/2．R、R。當在該等圖式中注入埠之進入點係在中央及內壁之間中途處，擴散之距離為最小值，因而改善氣體之混合。合適之徑向距離取決於當氣體進入該歧管時其之速度(該氣體速度由製程條件決定，諸如流速、壓力、溫度、氣體類型等)、注入埠之內徑、注入埠相對於該歧管之軸之方位、該歧管之直徑等。例如，相較於淋洗頭式反應器，該等製程條件、該等埠之直徑、及該歧管之直徑不同(例如，淋洗頭式反應器：載體氣體氦、壓力700Pa、埠直徑5mm、歧管直徑20mm；另一淋洗頭式反應器；載體氣體氬、壓力422Pa、埠直徑3mm、歧管直徑14mm)，因此該等埠之方位經不同地設置。例如，對於450-mm晶圓之淋洗頭式反應器(例如：EmerALD®)，注入埠之角度較佳係約15°至約25°，且對於另一450-mm晶圓之淋洗頭式反應器(例如：Eagle®)，注入埠之角度較佳係約90°。
圖8A顯示使用計算流體力學(CFD)所得之一影像，其表示根據本發明之一實施例之一氣體混合系統之壁上的氣體濃度，其中一處理氣體自於該管狀氣體歧管之下方軸位置處以20°之角度置放之氣體注入埠引入。圖8B顯示使用計算流體力學(CFD)模擬所得之一影像，其表示根據 圖8A繪示之實施例在該管狀歧管之下方末端處所得之在該管狀歧管之橫截面上的氣體濃度。在此實施例中，該氣體混合系統具有類似於圖3及4所示者之組態(略去C形分配通道)。該等氣體係以如圖5相同之方式饋入。如圖8A及8B所示，該處理氣體之氣體種類之濃度在中央及該歧管圓周之間為高，而該處理氣體之氣體種類之濃度在中央處小面積中為低，其表示此組態可有效地減少氣體擴散之時間尺度，改善氣體之混合。由圖8B之分佈圖計算得之氣體混合之不均勻性為3.5%。
圖9A顯示使用計算流體力學(CFD)所得之一影像，其表示根據本發明之一實施例之一氣體混合系統之壁上的氣體濃度，其中一處理氣體自於該管狀氣體歧管之上方軸位置處以0°之角度置放之氣體注入埠引入。圖9B顯示使用計算流體力學(CFD)模擬所得之一影像，其表示根據圖9A繪示之實施例在該管狀歧管之下方端處所得之在一管狀歧管之橫截面上的氣體濃度。在此實施例中，該氣體混合系統具有與圖8A相同之組態，但該處理氣體在該上方軸位置處以0°之角度饋送。如圖9A及9B所示，該處理氣體之氣體種類之濃度在中央及該歧管圓周之間為高，而該處理氣體之氣體種類之濃度在中央處小面積中為低，其表示此組態可有效地減少氣體擴散之時間尺度，改善氣體之混合。由圖9B之分佈圖計算得之氣體混合之不均勻性為2.1%。
當需要更多氣體管線時，為易於製造其可藉由在該管狀氣體歧管之不同高度(二、三、或更多軸位置)處置放注入埠來調節。如由圖8A至9B可知，可取決於該軸位置而不同地最佳化注入埠之組態(例如，在上方軸位置處之注入埠之角度與直徑及在下方軸位置處之注入埠之角度與直 徑可經不同地或個別地最佳化)。
圖10顯示使用計算流體力學(CFD)模擬所得之一影像，其表示根據圖9A繪示之實施例在該管狀歧管中間所得之在一管狀歧管之橫截面上的氣體濃度。中間點位於距下方注入埠(在第一軸位置)56mm處，其中在該等下方注入埠及該管狀氣體歧管之下方末端間之長度係115mm。如圖10所示，該處理氣體之氣體種類之濃度呈環狀不連續地變化，其表示為使氣體良好混合存在由該等注入埠至該管狀氣體歧管之底部(即，該反應器之入口)之最小長度，且與圖9A及9B所示之115mm相較，56mm係不足的。由圖10之分佈圖計算所得之氣體混合之不均勻性為14.8%。最小長度主要取決於該等製程條件。
圖11A顯示使用該計算流體力學(CFD)所得之一影像，其表示根據本發明之一實施例之具有一類螺旋設計之一氣體混合系統之壁上的氣體濃度，其中一處理氣體自置放於該管狀氣體歧管入口之下方軸位置處之氣體注入埠引入。在此實施例中，沿著該管狀氣體歧管之螺旋軸由下方注入埠至該管狀氣體歧管之下方末端之長度為315mm，且自該管狀氣體歧管之下方末端之該下方注入埠之高度為170mm(直線距離)。此外，該等注入埠係以90°之角度設置。圖11B顯示使用計算流體力學(CFD)模擬所得之一影像，其表示根據圖11A繪示之實施例在該管狀歧管之下方端處所得之在一管狀歧管之橫截面上的氣體濃度。如圖11A及11B所示，該處理氣體之氣體種類之濃度在該管狀氣體歧管之一側為高，且在該管狀氣體歧管之另一側為低，其表示該等注入埠之組態在該螺旋設計中對混合具有邊緣效應。由圖11B之分佈圖計算所得之氣體混合之不均勻性為5%。達成相對良 好之均勻性主要係由於由該等注入埠至該管狀氣體歧管之下方末端(反應器入口)之距離為長。
圖12A及12B顯示使用計算流體力學(CFD)模擬所得之影像，其表示取自根據本發明之一實施例之管狀歧管之下方末端類似於圖3所示者之管狀歧管橫截面上之氣體濃度，其中該等製程條件與用於圖8A及8B所示之影像之製程條件相同，但在該管狀氣體歧管之軸方向上以0.24slm(圖12A)及0.72slm(圖12B)代替0.6slm(圖8A及8B)自上方注入埠排放乾氣體至該管狀氣體歧管。即，與圖8B相較，圖12A之上方周向乾氣體流減少60%，而與圖8B相較，圖12B之上方周向乾氣體流增加20%。如圖12A及12B所示，當該上方周圍乾氣體增加時，該處理氣體之氣體種類之濃度在中央為高，且在沿著該管狀氣體歧管之圓周處為低，而當該上方周圍乾氣體減少時，該處理氣體之氣體種類之濃度之分佈幾乎顛倒，即該處理氣體之氣體種類之濃度在中央為低，且在沿著該管狀氣體歧管之圓周處(尤其是在對應於上方注入埠位置之五個點處)為高。與圖8B之3.5%相較，由圖12A之分佈圖計算所得之氣體混合之不均勻性為9.1%，且圖12B之不均勻性為10.9%。藉由調整上方周圍乾氣體流，可有效地改善氣體混合。
圖13顯示使用計算流體力學(CFD)模擬所得之一影像，其表示取自根據本發明之一實施例之管狀歧管之下方末端類似於圖3所示者在一管狀歧管橫截面上之氣體濃度，其中該等製程條件與用於圖8A及8B所示之影像之製程條件相同，但以20°之角度自下方注入埠以0.54slm代替0.39slm(圖8A及8B)排放乾氣體(周圍乾氣體)至該管狀氣體歧管。即，與圖8B相較，圖13之下方周圍乾氣體流增加約40%。如圖13所示，當該下 方周圍乾氣體增加時，該處理氣體之氣體種類之濃度之分佈類似於圖8B者，但該分佈受該等注入埠之位置影響更大(存在五個高濃度點)。相較於圖8B之3.5%，由圖13之分佈圖計算所得之氣體混合之不均勻性為4.6%。藉由調整下方周圍乾氣體流，可改善氣體混合。
本文所揭示之管狀氣體歧管在該等氣體進入反應室前極有效地混合氣體種類。淋洗頭式反應器中氣體混合未改善。圖14顯示使用計算流體力學(CFD)模擬所得之影像，其表示對於450-mm之單晶圓處理反應器之習知淋洗頭之壁上之氣體濃度。如圖14所示，在淋洗頭152中，「左側」氣體不會遇到「右側」氣體，因此若在淋洗頭152上游氣體未混合並經由氣體入口埠151進入淋洗頭152，則可在該淋洗頭中維持氣體之濃度之不均勻分佈。
上文中，該管狀氣體歧管具有置放於兩個軸位置處之注入埠，及置放於頂部之一頂部注入埠。然而，該管狀氣體歧管可具有僅置放於單一軸位置之至少兩個注入埠及置放於頂部之一頂部注入埠，其中一氣體種類在該軸位置處經由該等注入埠注入，而第二氣體種類經由該頂部注入埠注入。此外，當增加注入埠之數量時，注入埠可置放於多於兩個軸位置。
圖1係顯示根據本發明之一實施例之一氣體混合系統的示意圖。氣體混合系統1包含一管狀歧管9、在該管狀氣體歧管之上方部份處連接至該管狀氣體歧管9之注入埠2、3、4、5、6、及7、以及一頂部注入埠8。該等注入埠2至7係在相同軸位置處以約45°之角度(相對於該管狀氣體歧管之軸)沿著該管狀氣體歧管9之圓周以相同間隔置放。該管狀氣體歧 管9具有一下方末端10，其經組態以連接至一反應器之氣體入口埠。該頂部注入埠8係平行於該管狀氣體歧管9之軸置放。
當將一乾氣體供應至該頂部注入埠8並亦供應至該等注入埠2、7、及6，而將一處理氣體供應至該等注入埠3、4、及5時(其中該乾氣體經由該等三個相鄰注入埠通過，且該處理氣體經由該等三個相鄰注入埠通過)，由使用計算流體力學(CFD)模擬獲得之分佈圖在該管狀氣體歧管之下方末端處計算之氣體混合之不均勻性為27%。相對地，當將乾氣體供應至該頂部注入埠8並亦供應至該等注入埠2、6、及4，而將處理氣體供應至該等注入埠7、5、及3時(其中該乾氣體及該處理氣體經由該等注入埠交替地沿著該管狀氣體歧管之圓周通過)，由使計算流體力學(CFD)模擬所得之一分佈圖在該管狀氣體歧管之下方末端處計算之氣體混合之不均勻性為0.4%，其明顯低於自該管狀氣體歧管之一側供應該乾氣體及該處理氣體時。
圖2係顯示根據本發明之另一實施例之一氣體混合系統的示意圖。氣體混合系統21包含一管狀氣體歧管26、及在該管狀氣體歧管之上方部份處連接至該管狀氣體歧管26之注入埠22、23、24、及25。該等注入埠22至25係在相同軸位置處沿著該管狀氣體歧管26之圓周以相同間隔以約90°之角度(相對於該管狀氣體歧管之軸)置放。未提供頂部注入埠。該管狀氣體歧管26具有一下方末端，其經組態以連接至一反應器之氣體入口埠。
當將一乾氣體供應至該等注入埠25及24，而將一處理氣體供應至該等注入埠23及22時(其中該乾氣體經由該等二個相鄰注入埠通 過，且該處理氣體經由該等二個相鄰注入埠通過)，使用計算流體力學(CFD)模擬獲得之分佈圖在該管狀氣體歧管之下方末端處計算之氣體混合之不均勻性為6.2%。相對地，當將乾氣體供應至該等注入埠24及22，而將處理氣體供應至該等注入埠25及23時(其中該乾氣體及該處理氣體經由該等注入埠交替地沿著該管狀氣體歧管之圓周通過)，使用計算流體力學(CFD)模擬所得之一分佈圖在該管狀氣體歧管之下方末端處計算之氣體混合之不均勻性為0.9%，其明顯低於自該管狀氣體歧管之一側供應該乾氣體及該處理氣體時。
本文揭示之氣體混合系統可連接至需要在該等氣體進入反應室前混合二或多種氣體之任何合適之反應室。圖16係一電漿輔助沈積裝置之一示意圖，其中調適根據一實施例之一管狀氣體歧管以貼附至該裝置之一製程室之一中央氣體埠上。例如，此淋洗頭式反應器包含：包括在該反應室243之內部251中平行且彼此相對之一對導電平板電極242、244之一反應室243(一基板241置於該下方電極242之頂部)、在該反應室243之頂部提供之用於接納一管狀氣體歧管之一氣體入口埠200、及用於自該反應室243之內部251排放氣體之一排氣口246。該裝置進一步包含分別用於施加HRF功率及LRF功率至上方電極244之RF功率源245、290。下方電極242係電接地252。於該反應室243中亦提供用於將密封氣體引入該反應室243之內部251之一密封氣體流控制器264。上方電極244亦用作一淋洗頭。本文揭示之該氣體混合系統之管狀氣體歧管裝配在該氣體入口埠200上並連接至該上方電極244，且將經均勻混合之處理氣體自該管狀氣體歧管入口引入該反應室243。 圖17係一UV輔助沈積裝置之一示意圖，其中根據一實施例調適之一管狀氣體歧管以貼附至該裝置之一製程室之一側氣體埠上。例如，此橫流式反應器包含：一製程室179、在該反應室179之一橫向側上提供之一注入口凸緣171、在該反應室179之另一橫向側上提供之一排出口凸緣172、其上置放基板176之一基座177、及用於發射UV光之一下方燈陣列173、用於發射UV光之一上方燈陣列174、置放於該基座177及上方燈陣列174之間以界定一內部180之一照射窗玻璃175、以及提供於該注入口凸緣171中以用於裝配本文所揭示之該氣體混合系統之一管狀氣體歧管之一氣體入口埠178。處理氣體自該氣體混合系統經由該注入口凸緣171引入該製程室179之內部180中且以該製程室之橫向方向流動並經由該排出口凸緣172排放。該基板176以該下方燈陣列173及該上方燈陣列174發射之UV光照射。
上文中，熟悉本技術者將了解本裝置包括一或多個控制器(未示出)，其經程式化或是經組態以使得進行本文他處所描述之沈積及反應器清潔程序。該(等)控制器與各種電源、加熱系統、幫浦、機器人及反應器之氣體流量控制器或閥連通，如熟悉本技術者所了解。
熟悉本技術之人士應了解可在不背離本發明之精神下進行許多及各種修正。因此，應清楚了解本發明之形式僅作說明之用，且未意欲限制本發明之範疇。
1‧‧‧氣體混合系統
2‧‧‧注入埠
3‧‧‧注入埠
4‧‧‧注入埠
5‧‧‧注入埠
6‧‧‧注入埠
7‧‧‧注入埠
8‧‧‧頂部注入埠
9‧‧‧管狀氣體歧管
10‧‧‧下方末端

Claims (36)

  1. 一種用於一晶圓處理反應器之氣體入口系統，其包含：一管狀氣體歧管，其經調適以連接至用於將在該管狀氣體歧管中混合之氣體供應至該晶圓處理反應器之該晶圓處理反應器之一氣體入口埠中；及氣體饋送，其包含用於將一第一氣體饋入該管狀氣體歧管之一第一饋送及用於將一第二氣體饋入該管狀氣體歧管之一第二饋送，每一饋送具有在該管狀氣體歧管之一相同第一軸位置處連接至該管狀氣體歧管之二或多個注入埠，其中，每一該等氣體饋送之該等注入埠係在該相同第一軸位置處沿著該管狀氣體歧管之一圓周均勻地分佈。
  2. 如申請專利範圍第1項之氣體入口系統，其中該第一饋送之該等注入埠之數量與該第二饋送之該等注入埠之數量相同，且該第一饋送之該等注入埠與該第二饋送之該等注入埠係沿著該管狀氣體歧管之圓周交替地置放。
  3. 如申請專利範圍第1項之氣體入口系統，其中該第一饋送進一步包括具有分別連接至該第一饋送之二或多個注入埠之用於該第一氣體之流入之一入口及用於該第一氣體之流出之多重出口的一C形共用通道，且該第二饋送進一步包括具有分別連接至該第二饋送之二或多個注入埠之用於該第二氣體之流入之一入口及用於該第二氣體之流出之多重 出口的一C形共用通道。
  4. 如申請專利範圍第1項之氣體入口系統，其中每一饋送之該等注入埠以相對於該管狀氣體歧管之軸約0°至約45°之一角度連接至該管狀氣體歧管。
  5. 如申請專利範圍第1項之氣體入口系統，其中每一饋送之該等注入埠以相對於該管狀氣體歧管之軸約90°之一角度連接至該管狀氣體歧管。
  6. 如申請專利範圍第1項之氣體入口系統，其中該管狀氣體歧管於該第一軸位置下游具有一第一直徑，且在第一軸位置處具有一第二直徑，該第二直徑小於該第一直徑。
  7. 如申請專利範圍第1項之氣體入口系統，其中該第一饋送連接至提供一反應氣體之一氣體源，且該第二饋送連接至提供一惰性氣體之一氣體源。
  8. 如申請專利範圍第1項之氣體入口系統，其中該等氣體饋送作為下方氣體饋送，且該氣體入口系統進一步包含上方氣體饋送，該上方氣體饋送包含用於將一第三氣體饋入該管狀氣體歧管之一第三饋送，及用於將一第四氣體饋入該管狀氣體歧管之一第四饋送，每一該等上方氣體饋送具有在該管狀氣體歧管之一第二軸位置處連接至該管狀氣體歧 管之二或多重注入埠，該第二軸位置位於該第一軸位置之上游。
  9. 如申請專利範圍第8項之氣體入口系統，其中該管狀氣體歧管在該第一軸位置下游具有一第一直徑，在該第一軸位置處具有一第二直徑，且在該第二軸位置處具有一第三直徑，該第三直徑小於該第二直徑，該第二直徑小於該第一直徑。
  10. 如申請專利範圍第8項之氣體入口系統，其中該第三饋送進一步包括具有分別連接至該第三饋送之二或多個注入埠之用於該第三氣體之流入之一入口及用於該第三氣體之流出之多重出口的一C形共用通道，且該第四饋送進一步包括具有分別連接至該第四饋送之二或多個注入埠之用於該第四氣體之流入之一入口及用於該第四氣體之流出之多重出口的一C形共用通道。
  11. 如申請專利範圍第8項之氣體入口系統，其中每一第三與第四饋送之該等注入埠以相對於該管狀氣體歧管之軸約0°至約45°之一角度連接至該管狀氣體歧管。
  12. 如申請專利範圍第11項之氣體入口系統，其中每一該等第三與第四饋送之注入埠大致平行於該管狀氣體歧管之軸連接至該管狀氣體歧管，且每一該等第一與第二饋送之注入埠係以相對於該管狀氣體歧管之軸約15°至約25°之一角度連接至該管狀氣體歧管。
  13. 如申請專利範圍第1項之氣體入口系統，其進一步包含用於將一輔助氣體饋入該管狀氣體歧管之一頂部饋送，該頂部饋送具有在該管狀氣體歧管之一上游末端處連接至該管狀氣體歧管之一注入埠。
  14. 如申請專利範圍第13項之氣體入口系統，其中該頂部饋送係連接至提供一乾氣體之一氣體源。
  15. 如申請專利範圍第1項之氣體入口系統，其中該晶圓處理反應器係一用於原子層沈積(ALD)之反應器或一用於化學氣相沈積(CVD)之反應器，且該管狀氣體歧管係連接至用於ALD或CVD之該反應器之一氣體入口埠。
  16. 如申請專利範圍第15項之氣體入口系統，其中該管狀氣體歧管適於為在該晶圓處理反應器之晶圓調節區域上居中置放之氣體入口埠。
  17. 一種用於使用如申請專利範圍第1項之氣體入口系統將一混合氣體饋入一晶圓處理反應器之方法，其包含：將該第一氣體經由該第一饋送之注入埠饋入該管狀氣體歧管，同時將該第二氣體經由該第二饋送之注入埠饋入該管狀氣體歧管，藉此該第一氣體及該第二氣體在該管狀氣體歧管內混合；及將該混合氣體經由該氣體入口系統饋入該晶圓處理反應器以在裝載於該反應器中之一基板上沈積一膜。
  18. 如申請專利範圍第17項之方法，其中該管狀氣體歧管進一步包含具有在該管狀氣體歧管之一上游末端處連接至該管狀氣體歧管之一注入埠之一頂部饋送，其中該方法進一步包含經由該頂部饋送之注入埠將一惰性氣體饋入該管狀氣體歧管，同時將該等第一及第二氣體饋入該管狀氣體歧管，該等第一及第二氣體中之一者係一處理氣體。
  19. 如申請專利範圍第18項之方法，其中該膜係在第一條件下沈積，且該方法進一步包含改變來自該頂部饋送之惰性氣體之流速同時維持除該惰性氣體之流速以外之該等第一條件，以將一膜沈積在一基板上，該膜相對於在該等第一條件下沈積之該膜之均勻性具有一改良之膜均勻性。
  20. 如申請專利範圍第17項之方法，其中該等氣體饋送係作為下方氣體饋送，且該氣體入口系統進一步包含含有一第三饋送及一第四饋送之上方氣體饋送，該等上方氣體饋送之每一者具有在該管狀氣體歧管之一第二軸位置處連接至該管狀氣體歧管之二或多個注入埠，該第二軸位置定位於該第一軸位置之上游，其中該方法進一步包含將一第三氣體及一第四氣體分別經由該等第三饋送及第四饋送之注入埠饋入該管狀氣體歧管，同時將該等第一及第二氣體饋入該管狀氣體歧管，該等第一及第二氣體中之一者係一處理氣體。
  21. 一種結合晶圓處理反應器之氣體入口系統，包含： 一晶圓處理反應器具有一反應室及設置於該反應室內的一淋洗頭；一管狀氣體歧管，其在一較低端具有一管狀內部係連接至位於該晶圓處理反應器之該反應室的上游的一氣體埠，用於將該管狀氣體歧管中一混合氣體供應至該淋洗頭；及氣體饋送，包含用於將一第一氣體饋入該管狀氣體歧管之一第一饋送及用於將與該第一氣體不同之一第二氣體饋入該管狀氣體歧管之一第二饋送，該第一饋送與該第二饋送中的每一饋送具有貼附至該管狀氣體歧管之二或多個注入埠於該管狀氣體歧管之相同一第一軸位置處，以使該第一氣體及該第二氣體得以在該第一軸位置處分別饋入該管狀氣體歧管的該管狀內部，其中該第一軸位置為沿該管狀氣體歧管之一縱長軸所定義的位置，其中，在該相同第一軸位置處沿著該管狀氣體歧管之相同圓周，該第一饋送之該等注入埠均勻地分佈及該第二饋送之該等注入埠均勻地分佈，其中該管狀氣體歧管於該第一軸位置下游具有一第一直徑，其中該第一饋送及該第二饋送的該等注入埠開啟於沿具有該第一直徑的該管狀氣體歧管的一內側壁。
  22. 如申請專利範圍第21項之氣體入口系統，其中該第一饋送之該等注入埠之數量與該第二饋送之該等注入埠之數量相同，且該第一饋送之該等注入埠與該第二饋送之該等注入埠係沿著該管狀氣體歧管之圓周交 替地置放。
  23. 如申請專利範圍第21項之氣體入口系統，其中該第一饋送進一步包括具有分別連接至該第一饋送之二或多個注入埠之用於該第一氣體之流入之一入口及用於該第一氣體之流出之多重出口的一C形共用通道，且該第二饋送進一步包括具有分別連接至該第二饋送之二或多個注入埠之用於該第二氣體之流入之一入口及用於該第二氣體之流出之多重出口的一C形共用通道。
  24. 如申請專利範圍第21項之氣體入口系統，其中每一饋送之該等注入埠以相對於該管狀氣體歧管之軸約0°至約45°之一角度連接至該管狀氣體歧管。
  25. 如申請專利範圍第21項之氣體入口系統，其中每一饋送之該等注入埠以相對於該管狀氣體歧管之軸約90°之一角度連接至該管狀氣體歧管。
  26. 如申請專利範圍第21項之氣體入口系統，其中該第一饋送連接至提供一反應氣體之一氣體源，且該第二饋送連接至提供一惰性氣體之一氣體源。
  27. 如申請專利範圍第21項之氣體入口系統，其中該等氣體饋送作為下方氣體饋送，且該氣體入口系統進一步包含上方氣體饋送，該上方氣體 饋送包含用於將一第三氣體饋入該管狀氣體歧管之一第三饋送，及用於將一第四氣體饋入該管狀氣體歧管之一第四饋送，每一該第三及第四氣體饋送具有在該管狀氣體歧管之相同一第二軸位置處連接至該管狀氣體歧管之二或多重注入埠，該第二軸位置位於該第一軸位置之上游。
  28. 如申請專利範圍第27項之氣體入口系統，其中該管狀氣體歧管在該第一軸位置下游具有一第一直徑，及在該第二軸位置處具有一第三直徑，該第三直徑小於該第一直徑。
  29. 如申請專利範圍第27項之氣體入口系統，其中該第三饋送進一步包括具有分別連接至該第三饋送之二或多個注入埠之用於該第三氣體之流入之一入口及用於該第三氣體之流出之多重出口的一C形共用通道，且該第四饋送進一步包括具有分別連接至該第四饋送之二或多個注入埠之用於該第四氣體之流入之一入口及用於該第四氣體之流出之多重出口的一C形共用通道。
  30. 如申請專利範圍第27項之氣體入口系統，其中每一第三與第四饋送之該等注入埠以相對於該管狀氣體歧管之軸約0°至約45°之一角度連接至該管狀氣體歧管。
  31. 如申請專利範圍第30項之氣體入口系統，其中每一該等第三與第四饋送之注入埠大致平行於該管狀氣體歧管之軸連接至該管狀氣體歧管，且每一該等第一與第二饋送之注入埠係以相對於該管狀氣體歧管之軸約15°至約25°之一角度連接至該管狀氣體歧管。
  32. 如申請專利範圍第21項之氣體入口系統，其進一步包含用於將一輔助氣體饋入該管狀氣體歧管之一頂部饋送，該頂部饋送具有在該管狀氣體歧管之一上游末端處連接至該管狀氣體歧管之一注入埠。
  33. 如申請專利範圍第31項之氣體入口系統，其中該頂部饋送係連接至提供一乾氣體之一氣體源。
  34. 如申請專利範圍第21項之氣體入口系統，其中該晶圓處理反應器係一用於原子層沈積(ALD)之反應器或一用於化學氣相沈積(CVD)之反應器，且該管狀氣體歧管係連接至用於ALD或CVD之該反應器之一氣體入口埠。
  35. 如申請專利範圍第34項之氣體入口系統，其中該管狀氣體歧管適於為在該晶圓處理反應器之晶圓調節區域上居中置放之氣體入口埠。
  36. 如申請專利範圍第21項之氣體入口系統，其中該管狀氣體歧管的該第一軸位置與該處理反應器的入口相隔大於56mm的距離。
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