JP4879159B2 - アモルファス炭素膜堆積のためのcvdプロセス - Google Patents
アモルファス炭素膜堆積のためのcvdプロセス Download PDFInfo
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- JP4879159B2 JP4879159B2 JP2007501834A JP2007501834A JP4879159B2 JP 4879159 B2 JP4879159 B2 JP 4879159B2 JP 2007501834 A JP2007501834 A JP 2007501834A JP 2007501834 A JP2007501834 A JP 2007501834A JP 4879159 B2 JP4879159 B2 JP 4879159B2
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- amorphous carbon
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- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
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- 229960003742 phenol Drugs 0.000 description 1
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Images
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02115—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material being carbon, e.g. alpha-C, diamond or hydrogen doped carbon
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
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- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
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Description
[0001]本発明は集積回路の製造と、基板上に材料を堆積するためのプロセスと、この材料によって形成された構造とに関する。
[0025]図6は、アモルファス炭素層堆積を実行するのに使用可能な基板処理システムの一実施形態の概略図である。この装置はプロセスチャンバ625と、ガスパネル630と、コントロールユニット610と、電源および真空ポンプなどの他のハードウェアコンポーネントとを備える。本発明で使用されるシステムの一実施形態の詳細は、2002年4月2日に発行された、同一出願人による米国特許第6,364,954号、「High Temperature Chemical Vapor Deposition Chamber」に説明されており、参照として本明細書に組み込まれている。
[0034]アモルファス炭素層は、1つ以上の炭化水素化合物のガス混合物やこれらの誘導体を処理チャンバに導入するステップを含むプロセスによって堆積されてもよい。加えて、酸素含有化合物が使用されてもよい。炭化水素化合物は場合によって窒素を含有したり、アンモニアなどの窒素含有ガスを堆積されたりしてもよい。また、炭化水素化合物は、フッ素および酸素などの置換基を有してもよい。炭化水素化合物やその誘導体は式CAHBOCFDを有しており、ここでAは1〜24の範囲を有しており、Bは0〜50の範囲を有しており、Cは0〜10の範囲を有しており、Dは0〜50の範囲を有しており、BおよびDの合計は少なくとも2である。
[0068]図1A〜1Eは、ハードマスクとしてアモルファス炭素層を組み込んでいる集積回路製造シーケンスの異なる段階での基板100の一実施形態の概略断面図を図示している。一般的に、基板100は、処理が実行される任意のワークのことをいい、基板構造150は、基板100上に形成された他の材料と共に基板100を概して記すために使用される。特定の処理段階に応じて、基板100はシリコン基板や、基板上に形成されている他の材料層に対応してもよい。図1Aは例えば、従来その上に形成されていた材料層102を有する基板構造150の断面図を図示している。材料層102は酸化物(例えば、SiO2)であってもよい。一般的に、基板100は、1層のシリコン、シリサイド、金属または他の材料を含んでもよい。
[0075]エッチングストップおよび/または反射防止コーティング(ARC)としてのアモルファス炭素および本明細書に説明されたアモルファス炭素材料除去プロセスによって形成された導電または誘電特徴部の一例が図2A〜2Eに示されており、これらは、本発明のステップを形成する基板の断面図である。
[0091]低誘電率誘電シリコン、酸素および炭素材料と、アモルファス炭素材料と、本明細書に説明されたアモルファス炭素材料除去プロセスとを使用して形成されるダマシン構造の一例が図3A〜3Gに示されており、これらは断面図である。
[00104]図4は、アモルファス炭素層を組み込む集積回路製造シーケンスの異なる段階でのアモルファス炭素堆積プロセスの一実施形態の断面図である。基板構造401は、基板上に形成された他の材料層を伴う基板のことである。処理段階に応じて、基板はシリコン基板や、基板上に形成されている他の層に相当する場合がある。図4は、従来その上に形成されてきた材料層402を有する基板構造401を図示している。材料層402は酸化物(例えば、SiO2)であってもよい。一般的に、材料層402は1層のシリコン、シリサイド、金属または他の材料を含んでもよい。アモルファス炭素層403が上記のプロセスパラメータに従って材料層402上に形成される。アモルファス炭素層の厚さは特定の処理段階に応じて可変的である。通常、アモルファス炭素層は約50Å〜約1000Åの範囲の厚さを有している。
[00109]図5は、アモルファス炭素層をハードマスクとして組み込む集積回路製造シーケンスの異なる段階でのアモルファス炭素堆積プロセスの代替実施形態の断面図である。一般的に、基板構造501は、処理が実行される任意のワークのことである。特定の処理段階に応じて、基板構造501はシリコン基板や、基板上に形成されている他の材料層であってもよい。図5は例えば、従来その上に形成されてきた材料層を含む場合がある基板構造501の断面図を図示している。基板構造の材料層は酸化物(例えば、SiO2)を含むことがある。一般的に、基板構造501は1層のシリコン、シリサイド、金属または他の材料を含んでもよい。
[00111]得られる膜密度に水素流量が如何に影響したかを図示するために、アモルファス炭素膜が炭化水素化合物および水素を堆積された。膜が1000sccm水素、2000sccm水素または3000sccm水素によって堆積される以外は処理条件のすべてが一定であった。1000sccm水素の膜密度は1.44g/cc、2000sccm水素の膜密度は1.47g/cc、3000sccm水素の膜密度は1.54g/ccであった。これらの結果は、高い水素流量では、密度の高い膜が堆積されることを指し示している。膜密度は炭素二重結合形成の1つの推定である。したがって、水素流量の高い膜堆積プロセスは、炭素二重結合の可能性の高い膜を形成しやすい。
Claims (18)
- 処理チャンバにおいて基板を処理する方法であって、
前記基板を処理チャンバに位置決めするステップと、
処理ガスを前記処理チャンバに導入するステップであって、前記処理ガスが、水素とα−テルピネンを含んでいるステップと、
二重周波数RF源から電力を印加することによって前記処理ガスのプラズマを生成するステップと、
前記基板上にアモルファス炭素層を堆積するステップと、
を備える方法。 - 前記アモルファス炭素層をエッチングして、パターニング済みアモルファス炭素層を形成するステップをさらに備える、請求項1に記載の方法。
- 水素含有プラズマ、窒素含有プラズマ、酸素含有プラズマまたはこれらの組み合わせを使用して前記基板から前記アモルファス炭素層を除去するステップをさらに備える、請求項1に記載の方法。
- 前記二重周波数RF源からの前記電力が、第1の周波数の第1のRF電力と、前記第1の周波数未満の第2の周波数の第2のRF電力との組み合わせを備える、請求項1に記載の方法。
- 前記第1の周波数が10MHz〜30MHzであり、前記第2の周波数が10kHz〜1MHzである、請求項4に記載の方法。
- 前記第2のRF電力と、前記第1のRF電力と前記第2のRF電力の和との比が0.6:1未満である、請求項5に記載の方法。
- 前記第1のRF電力が200W〜1600Wであり、前記第2のRF電力が1W〜1000Wである、請求項4に記載の方法。
- 前記処理ガスが、フッ素(F2)、三フッ化窒素(NF 3 )、CHF3、CH2F2およびこれらの組み合わせからなる群より選択される、1つ以上のフッ素ベース化合物を含む、請求項1に記載の方法。
- 前記アモルファス炭素層上に反射防止コーティングの層を堆積することをさらに含み、前記反射防止コーティングが、窒化シリコン、シリコンカーバイド、炭素ドープ酸化シリコン、アモルファス炭素およびこれらの組み合わせからなる群より選択される材料である、請求項1に記載の方法。
- 前記処理ガスが、ヘリウム(He)、アルゴン(Ar)、窒素(N 2 )およびこれらの組み合わせからなる群より選択されるキャリアガスをさらに含む、請求項1に記載の方法。
- 処理チャンバにおいて基板を処理する方法であって、
処理チャンバに前記基板を位置決めするステップと、
前記処理チャンバに処理ガスを導入するステップであって、前記処理ガスがキャリアガス、水素、およびα−テルピネンを含んでいるステップと、
二重周波数RF源から電力を印加することによって前記処理ガスのプラズマを生成するステップと、
前記基板上にアモルファス炭素層を堆積するステップと、
前記アモルファス炭素層をエッチングして、パターニング済みアモルファス炭素層を形成するステップと、
前記1つ以上のアモルファス炭素層を除去するステップと、
前記基板の前記表面上に導電材料を堆積するステップと、
を備える方法。 - 前記1つ以上のアモルファス炭素層上に1つ以上の反射防止コーティングを堆積するステップと、
前記反射防止コーティング上にレジスト材料をパターニングするステップと、
前記1つ以上のアモルファス炭素層をエッチングする前、またはこれと同時に前記反射防止コーティングをエッチングするステップと、
をさらに備える、請求項11に記載の方法。 - 前記導電材料を堆積する前に誘電層を堆積するステップをさらに備える、請求項11に記載の方法。
- 前記導電材料を堆積する前にバリヤ層を堆積するステップをさらに備える、請求項11に記載の方法。
- 処理チャンバにおいて、一以上の誘電体の層を含む基板を処理する方法であって、
処理チャンバに前記基板を位置決めするステップと、
前記処理チャンバに処理ガスを導入するステップであって、前記処理ガスがキャリアガス、水素、およびα−テルピネンを含んでいるステップと、
二重周波数RF源から電力を印加することによって前記処理ガスのプラズマを生成するステップと、
前記基板上に1つ以上のアモルファス炭素層を堆積するステップと、
前記1つ以上のアモルファス炭素層の少なくとも1つの領域にパターンを画成するステップと、
前記1つ以上のアモルファス炭素層の前記少なくとも1つの領域に形成された前記パターンによって前記1つ以上の誘電層に特徴限定部を形成するステップと、
を備える方法。 - 前記特徴限定部に1つ以上の導電材料を堆積する前に前記1つ以上のアモルファス炭素層をプラズマに暴露することによって前記1つ以上のアモルファス炭素層を除去するステップであって、前記プラズマが、水素含有ガス、窒素含有ガス、酸素含有ガスおよびこれらの組み合わせからなる群より選択されるガスであるステップをさらに備える、請求項15に記載の方法。
- 1つ以上の導電物質を前記特徴限定部に堆積するステップと、
前記1つ以上の導電材料を研磨して、前記1つ以上のアモルファス炭素層上で停止するステップと、
前記1つ以上のアモルファス炭素層を水素含有ガスのプラズマに暴露することによって前記1つ以上のアモルファス炭素層を除去するステップと、
をさらに備える請求項15に記載の方法。 - 前記1つ以上のアモルファス炭素層上に反射防止コーティングを堆積するステップと、
前記反射防止コーティング上にレジスト材料をパターニングするステップと、
前記1つ以上のアモルファス炭素層をエッチングする前、またはこれと同時に前記反射防止コーティングをエッチングするステップと、
をさらに備える請求項15に記載の方法。
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WO2005087974A2 (en) | 2005-09-22 |
JP2007531987A (ja) | 2007-11-08 |
US7407893B2 (en) | 2008-08-05 |
TW200600605A (en) | 2006-01-01 |
US20050287771A1 (en) | 2005-12-29 |
KR101098632B1 (ko) | 2011-12-26 |
KR20070004009A (ko) | 2007-01-05 |
WO2005087974A3 (en) | 2005-12-15 |
TWI332034B (en) | 2010-10-21 |
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