JP2010537843A - 微細構造物品を作製するための工具 - Google Patents
微細構造物品を作製するための工具 Download PDFInfo
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- JP2010537843A JP2010537843A JP2010524112A JP2010524112A JP2010537843A JP 2010537843 A JP2010537843 A JP 2010537843A JP 2010524112 A JP2010524112 A JP 2010524112A JP 2010524112 A JP2010524112 A JP 2010524112A JP 2010537843 A JP2010537843 A JP 2010537843A
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- pattern
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
- G03F7/2053—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a laser
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0015—Production of aperture devices, microporous systems or stamps
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0017—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor for the production of embossing, cutting or similar devices; for the production of casting means
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Micromachines (AREA)
- Moulds For Moulding Plastics Or The Like (AREA)
- Shaping Of Tube Ends By Bending Or Straightening (AREA)
Abstract
Description
Claims (41)
- (1)基材上に第一微細構造パターンを形成する工程と、
(2)前記第一微細構造パターンを複製して、第二微細構造パターンを可撓性材料内に作製する工程と、
(3)前記第二微細構造パターンを複数回複製して、第三微細構造パターンを架橋性材料内に形成して、第一キャリア上に工具を作製する工程と、
(4)前記第三微細構造パターンをポリマーに複製して、少なくとも1つの微細構造物品を作製する工程と、を含む、微細構造物品を作製する方法。 - 前記第一微細構造パターンが、ポリマーに形成される、請求項1に記載の方法。
- 前記ポリマーのパターンを、二光子光重合工程により形成することを含む、請求項2に記載の方法。
- 前記微細構造物品を第二キャリア上に形成し、かつ前記第二キャリアがフィルムを含む、請求項1に記載の方法。
- 当該第二キャリアのフィルムから、前記微細構造物品のそれぞれを除去することを更に含む、請求項4に記載の方法。
- 工程(4)における複製が、押出成形複製を含む、請求項1に記載の方法。
- 前記可撓性材料が、自己支持型フィルムである、請求項1に記載の方法。
- 前記第一キャリアが、可撓性である、請求項1に記載の方法。
- 可撓性の前記第一キャリアが、金属フィルム又はポリマーフィルムの1つを含む、請求項8に記載の方法。
- 前記第一キャリアが、シリンダーを含む、請求項1に記載の方法。
- 前記第一キャリアが、金属ロール、高分子ロール又はベルトの1つを含む、請求項10に記載の方法。
- 前記第一キャリアが、ベルトを含む、請求項1に記載の方法。
- 工程(4)における複製が、実質的に連続的である、請求項1に記載の方法。
- 工程(4)における複製が、段階的に連続的である、請求項1に記載の方法。
- 前記可撓性材料が、フルオロポリマー及びシリコーンの1つを含む、請求項1に記載の方法。
- 前記フルオロポリマーが、ペルフルオロポリエーテルである、請求項15に記載の方法。
- 前記フルオロポリマーが、ペルフルオロポリエーテルメタクリレートである、請求項16に記載の方法。
- 前記基材が、ポリマー、金属、シリコンウエハ及び石英の1つを含む、請求項1に記載の方法。
- 前記フィルムが、約2mm〜約1cmの厚さを有する、請求項7に記載の方法。
- 工程(4)の前に、工具の微細構造表面の表面エネルギーを変更することを更に含む、請求項1に記載の方法。
- 前記変更が、プラズマ処理を含む、請求項20に記載の方法。
- 前記プラズマ処理が、フッ素含有薄膜を工具上に堆積させることを含む、請求項21に記載の方法。
- 前記フッ素含有薄膜が、非晶質フッ素化炭素を含む、請求項22に記載の方法。
- 前記非晶質フッ素化炭素が、フルオロカーボン前駆体ガスから堆積される、請求項23に記載の方法。
- 前記前駆体ガスが、ペルフルオロプロパンを含む、請求項22に記載の方法。
- 前記プラズマ処理が、シリコン含有薄膜を工具上に堆積させることを含む、請求項21に記載の方法。
- 前記シリコン含有薄膜が、非晶質水素添加シリコンオキシカーバイドを含む、請求項26に記載の方法。
- 前記シリコン含有薄膜が、ダイヤモンド様ガラスを含む、請求項27に記載の方法。
- 前記非晶質水素添加シリコンオキシカーバイドが、オルガノシリコン前駆体ガスから堆積される、請求項27に記載の方法。
- 前記オルガノシリコン前駆体ガスが、テトラメチルシランである、請求項29に記載の方法。
- 前記テトラメチルシランが、酸素、窒素、アンモニア、及び水のうち少なくとも1つを含む気体と混合される、請求項30に記載の方法。
- 前記気体が、酸素を含む、請求項31に記載の方法。
- 前記薄膜が、約1nm〜約1000nmの厚みを有する、請求項26に記載の方法。
- 前記薄膜が、約10nm〜約100nmの厚みを有する、請求項26に記載の方法。
- 工程(3)に続いて前記工具を電気メッキすることを更に含む、請求項1に記載の方法。
- (1)多光子フォトファブリケーションプロセスを用いて第一微細構造パターンを基材上に配置されたポリマーに形成することによって、原型を作製する工程と、
(2)フルオロポリマー及びシリコーンのうち少なくとも1つを含む可撓性材料の層を、前記原型に付与する工程と、
(3)前記可撓性材料の層を取り外す工程であって、前記可撓性材料の層が第二微細構造パターンを備えたスタンパーを形成し、かつ前記第二微細構造パターンが原型上の第一微細構造パターンの反転(reverse)である、工程と、
(4)放射線硬化性材料の層を、少なくとも1つのスタンパー上に付与し、前記放射線硬化性材料の層をキャリアに接触させて配置する工程と、
(5)前記放射線硬化性材料をスタンパーを介して硬化させる工程と、
(6)前記スタンパーを取り外して、少なくとも1つのスタンプ要素を備えた工具をキャリア上に形成する工程であって、前記工具上の少なくとも1つのスタンプ要素が第三微細構造パターンを含む、工程と、
(7)前記第三微細構造パターンをポリマーに実質的に連続的に複製して、構造化物品を作製する工程と、を含む、
微細構造物品の作製方法。 - 前記スタンパーが、可撓性かつ自己支持型である、請求項36に記載の方法。
- 前記フルオロポリマーが、ペルフルオロポリエーテルである、請求項36に記載の方法。
- 前記フルオロポリマーが、ペルフルオロポリエーテルメタクリレートである、請求項36に記載の方法。
- 前記スタンパーが、シリコーンを含む、請求項36に記載の方法。
- 工程(7)の前に、前記工具の微細構造表面にプラズマ処理を施すことを更に含む、請求項36に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US96762207P | 2007-09-06 | 2007-09-06 | |
PCT/US2008/075021 WO2009032815A1 (en) | 2007-09-06 | 2008-09-02 | Tool for making microstructured articles |
Publications (2)
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JP2010537843A true JP2010537843A (ja) | 2010-12-09 |
JP2010537843A5 JP2010537843A5 (ja) | 2011-10-06 |
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JP2010524112A Pending JP2010537843A (ja) | 2007-09-06 | 2008-09-02 | 微細構造物品を作製するための工具 |
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US (1) | US20100308497A1 (ja) |
EP (1) | EP2205521A4 (ja) |
JP (1) | JP2010537843A (ja) |
CN (1) | CN101795961B (ja) |
WO (1) | WO2009032815A1 (ja) |
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Also Published As
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EP2205521A1 (en) | 2010-07-14 |
EP2205521A4 (en) | 2013-09-11 |
CN101795961A (zh) | 2010-08-04 |
WO2009032815A1 (en) | 2009-03-12 |
US20100308497A1 (en) | 2010-12-09 |
CN101795961B (zh) | 2013-05-01 |
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