JP5960028B2 - 熱処理装置 - Google Patents
熱処理装置 Download PDFInfo
- Publication number
- JP5960028B2 JP5960028B2 JP2012240639A JP2012240639A JP5960028B2 JP 5960028 B2 JP5960028 B2 JP 5960028B2 JP 2012240639 A JP2012240639 A JP 2012240639A JP 2012240639 A JP2012240639 A JP 2012240639A JP 5960028 B2 JP5960028 B2 JP 5960028B2
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- lid
- quartz
- reaction tube
- heat treatment
- flange
- Prior art date
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- 238000010438 heat treatment Methods 0.000 title claims description 34
- 238000006243 chemical reaction Methods 0.000 claims description 70
- 239000010453 quartz Substances 0.000 claims description 70
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 70
- 239000002184 metal Substances 0.000 claims description 27
- 239000000498 cooling water Substances 0.000 claims description 10
- 238000001816 cooling Methods 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 230000000903 blocking effect Effects 0.000 claims description 2
- 238000007789 sealing Methods 0.000 description 21
- 235000012431 wafers Nutrition 0.000 description 13
- 239000007789 gas Substances 0.000 description 10
- 230000007246 mechanism Effects 0.000 description 10
- 230000003028 elevating effect Effects 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000011553 magnetic fluid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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Classifications
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B17/00—Furnaces of a kind not covered by any preceding group
- F27B17/0016—Chamber type furnaces
- F27B17/0025—Especially adapted for treating semiconductor wafers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
Description
さらに石英製蓋体5Bの上面であって、密封シール77の半径方向内方に、石英製蓋体5Bの中央部から石英製蓋体5Bの上面に沿って半径方向外方へ移行する熱を遮断するための円周溝76が設けられている。
W 半導体ウエハ(被処理体)
g 隙間
2 熱処理炉
3 炉口
4 反応管
4a ボトムフランジ
5 蓋体
5B 石英製蓋体
5C 金属製蓋体
7 フランジ保持部材
16 熱処理用ボート
17 ボート本体
18 脚部
19 下方フランジ
26 回転導入機構
27 回転軸部
28 ハウジング
70 支持リング
70a 冷却水路
71 取付ネジ
72 取付ネジ
73 緩衝材
75 カバーリング
76 円周溝
77 密封シール
78 円周突起
79 シール材
Claims (4)
- 下方に炉口を有するとともにボトムフランジを有する円筒状の石英製反応管と、
反応管のボトムフランジを保持するフランジ保持部と、
金属製蓋体と、金属製蓋体により支持され反応管の炉口を密閉する石英製蓋体とを有する蓋体とを備え、
石英製蓋体は金属製蓋体に支持リングにより固定され、支持リングがフランジ保持部材の下面に緩衝材を介して当接して、石英製蓋体とボトムフランジとの間に間隙を形成し、
ボトムフランジと石英製蓋体との間の間隙の半径方向外方に、密封シールを設けたことを特徴とする熱処理装置。 - 密封シールは断面Q字形状であり、リップ部分はカバーリングで固定されていることを特徴とする請求項1記載の熱処理装置。
- 金属製支持リング内に、密封シールを冷却するための冷却水路が設けられていることを特徴とする請求項1または2記載の熱処理装置。
- 石英製蓋体の上面であって、密封シールの半径方向内方に、石英製蓋体の上面に沿って半径方向中央部から半径方向外方へ移行する熱を遮断するための円周溝を設けたことを特徴とする請求項1乃至3のいずれか記載の熱処理装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012240639A JP5960028B2 (ja) | 2012-10-31 | 2012-10-31 | 熱処理装置 |
KR1020130128452A KR101673651B1 (ko) | 2012-10-31 | 2013-10-28 | 열처리 장치 |
TW102139129A TWI545299B (zh) | 2012-10-31 | 2013-10-29 | 熱處理裝置 |
US14/067,318 US9845991B2 (en) | 2012-10-31 | 2013-10-30 | Heat treatment apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012240639A JP5960028B2 (ja) | 2012-10-31 | 2012-10-31 | 熱処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014090145A JP2014090145A (ja) | 2014-05-15 |
JP5960028B2 true JP5960028B2 (ja) | 2016-08-02 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012240639A Active JP5960028B2 (ja) | 2012-10-31 | 2012-10-31 | 熱処理装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9845991B2 (ja) |
JP (1) | JP5960028B2 (ja) |
KR (1) | KR101673651B1 (ja) |
TW (1) | TWI545299B (ja) |
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