WO2015026230A1 - Twin-assembly of diverging semiconductor processing systems - Google Patents
Twin-assembly of diverging semiconductor processing systems Download PDFInfo
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- WO2015026230A1 WO2015026230A1 PCT/NL2014/050565 NL2014050565W WO2015026230A1 WO 2015026230 A1 WO2015026230 A1 WO 2015026230A1 NL 2014050565 W NL2014050565 W NL 2014050565W WO 2015026230 A1 WO2015026230 A1 WO 2015026230A1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
Definitions
- the present invention relates to the field of semiconductor processing equipment, and more in particular to a vertical furnace-type semiconductor processing tool that facilitates servicing.
- a semiconductor processing system may typically be placed in a clean room because clean, dust free processing is required.
- a front side of the system may then be integrated with a wall of the clean room, and for instance extend substantially flush therewith.
- the system may be fitted with substrate cassette I/O and storage equipment that is accessible from the clean room and so enables substrate cassettes accommodating semiconductor substrates to be exchanged between the clean room and the system.
- the system may further comprise a processing chamber or reactor, while a utility module, housing all of the system's primary electrical control components and process gas controls, may typically be provided at the system's rear end.
- the reactor is formed by a vertical tube furnace.
- a first aspect of the present invention is directed to a semiconductor processing assembly.
- the assembly may comprise a first and a second semiconductor processing system.
- Each semiconductor processing system may include a primary body that extends in a longitudinal direction from a front end to a rear end, and that includes a first and a second lateral side extending therebetween.
- the primary bodies of the semiconductor processing systems may be placed next to each other, such that the first lateral side of the primary body of the first semiconductor processing system opposes or faces the first lateral side of the primary body of the second semiconductor processing system.
- the opposing first lateral sides of the primary bodies may at least partially diverge, as seen in the longitudinal direction, so as to form a longitudinally extending maintenance space between them.
- the presently disclosed semiconductor processing assembly architecture recognizes that elongate semiconductor processing systems are typically modular in nature, and that the different functional modules of a system which are concatenated in the system's longitudinal direction, need not necessarily have a same width (measured transverse to the longitudinal direction). It is therefore possible to concatenate the modules of a single system in order of decreasing width.
- their opposing first lateral sides may diverge from another as seen from the front to the rear of the semiconductor processing system 110, thereby defining a gradually widening inner maintenance space between them.
- the maintenance space may thus provide access to the functional modules of the systems via the first lateral sides, and offer space for handling large components, such as vertical furnace reactor tubes.
- Fig. 1 is a schematic floor plan view of a first exemplary embodiment of a semiconductor processing assembly according to the present invention
- Fig. 2 is a schematic cross-sectional side view of the semiconductor processing assembly shown in Fig. 1;
- Fig. 3 is a schematic floor plan view of a second exemplary embodiment of a semiconductor processing assembly according to the present invention.
- Fig. 4 is a schematic cross-sectional side view of the semiconductor processing assembly shown in Fig. 3;
- Fig. 5 is a schematic floor plan view of a third exemplary embodiment of a semiconductor processing assembly according to the present invention.
- Fig. 6 is a schematic cross-sectional side view of the semiconductor processing assembly shown in Fig. 5.
- the presently disclosed semiconductor processing assembly 100 may include a first semiconductor processing systems 110a and a second semiconductor processing system 110b.
- the two semiconductor processing systems 110a, 110b of the assembly 100 may be mirror images of one another with respect to their outer shape and/or their interior layout, but this need not necessarily be the case.
- the two semiconductor processing systems 110a, 110b may be operably interconnected, for instance to enable an exchange of substrates or substrate cassettes 300 between them; alternatively, they may be operationally independent of one another.
- Each processing system 110 may include an elongate primary body 120 that extends in a longitudinal direction L from a front end 122 to a rear end 124.
- the primary body 120 may accommodate a plurality of functional modules, which may be arranged (and operably interconnected) in succession in the longitudinal direction L.
- a primary body 120 of a processing system 110 may accommodate:
- a substrate cassette I/O-station 140 including at least one load port 142 to which a substrate cassette 300 is dockable.
- I/O-station 140 may be arranged at the front end 122 of the primary body 120;
- a substrate transfer module 150 comprising a substrate handling robot 152 configured to transfer substrates between a substrate cassette 300 docked to the load port 142 of the substrate cassette I/O-station 140 and a substrate processing module;
- the substrate processing module 160 includes a vertical furnace, comprising a vertical wafer boat 162, a vertical furnace reactor 164 and a boat elevator 164.
- the boat elevator 166 is arranged at a first vertical level (ground level) of the system 110, while the vertical furnace reactor 164 is arranged at a second, elevated vertical level of the system 110, above the boat elevator 166, such that the boat elevator 166 may lift and lower the vertical wafer boat 162 into/from the vertical furnace reactor 164.
- the internal layout of the primary body 120 of a processing system 110 is not of primary importance to the present disclosure. Therefore, different embodiments of the presently disclosed semiconductor processing assembly 100 may include processing systems 110 with primary bodies 120 having a different internal layout than discussed here.
- the primary bodies 120 may, for instance accommodate different functional modules and/or functional modules in a different mutual arrangement.
- each processing system 110a, 110b is provided with a substrate cassette exchange station 500.
- the substrate cassette exchange station 500 is disposed in front of the primary body 120 of the respective processing system 110, and serves to exchange substrate cassettes 300 with (i) a global substrate cassette transport system of a processing facility in which the assembly 100 may be arranged (not shown), (ii) a substrate cassette stocker 400 that may be arranged at an elevated level, above the substrate transfer module 150 of the respective processing system 110, and (iii) the substrate cassette I/O-station 140 of the respective processing system 110.
- the substrate cassette exchange stations 500 are an optional component of the presently disclosed assembly 100; the same applies to the substrate cassette stockers 400.
- the primary body 120 of a processing system may define various sides, including a front side 123 at its front end 122, a rear side 125 at its rear end 124, and first and second lateral sides 126, 132 that extend generally longitudinally between the front and rear ends 122, 124 to interconnect the front and rear sides 123, 125.
- the front and rear sides 123, 125 of a primary body 120 may typically be generally planar, and extend in parallel, in which case a longitudinal axis I of the primary body 120 may be considered to extend perpendicular to both sides 123, 125.
- first and second lateral sides 126, 132 are situated at opposite sides of the primary body 120, such that they may be used to define a width w thereof, normally as the distance between them measured in a direction perpendicular to the longitudinal direction L.
- the width w of a primary body 120 may typically decrease monotonically along the longitudinal direction L - i.e. as seen from the front tot the rear of the semiconductor processing system 110.
- both the first and second lateral side 126, 128 of a primary body 120 may be at least piecewise planar. That is, each lateral side 126, 132 may be defined by typically substantially vertically oriented, generally planar sections. In one embodiment, one or more of such planar sections may be defined by panels that are detachably or movably - e.g. hingeably or slidably - connected to a frame of the primary body 120, so as to facilitate lateral maintenance access to an interior of the primary body 120 through removal of one or more panels. Adjacent planar sections of in particular the first lateral side 126 of a primary body 120 may include an angle to define a local fold, or bend in the respective lateral side. In the embodiment of Figs.
- the first lateral side 126 of the primary body 120 of each respective system 110 includes three vertically oriented, generally planar sections, as is best seen in the floor plan view of Fig.1: there is a small planar section that is associated with the substrate cassette I/O-station 140 and that extends parallel to the longitudinal direction L; in addition, there are two large planar sections, one roughly associated with the substrate transfer module 150 and extending at an angle relative to the longitudinal direction L, and another roughly associated with the substrate processing module 160 and again extending parallel to the longitudinal direction L. As seen in the floor plan view, each two longitudinally adjacent sections include an angle, thereby defining a fold.
- the second lateral side 128 of a primary body 120 may typically be substantially planar/straight, without folds or the like, and extend in parallel with a longitudinal axis I of the primary body. This ensures that the semiconductor processing systems 110 of different semiconductor processing assemblies 100 may be economically arranged side by side, with a minimal footprint.
- the two primary bodies 120a, 120b of the semiconductor processing systems 110a, 110b may be arranged next to each other.
- the longitudinal axes la, lb of the primary bodies 120a, 120b may extend in parallel, while the first lateral side 126a of the primary body 120a of the first semiconductor processing system 110a may oppose or face the first lateral side 126b of the primary body 120b of the second semiconductor processing system 110b.
- the primary bodies 120a, 120b may be configured such that their opposing first lateral sides 126a, 126b at least partially diverge from one another, as seen in the longitudinal direction L, so as to define a longitudinally extending maintenance space 200 between them.
- the opposing first lateral sides 126a, 126b may diverge mirror-symmetrically relative to a longitudinally extending (vertical) plane of symmetry M between the semiconductor processing systems 110a, 110b.
- the longitudinally extending maintenance space 200 may be considered to have a width W, which may be defined as the distance between opposing first lateral sides 126a, 126b of the primary bodies 120a, 120b of the semiconductor processing systems 110a, 110b as measured in a direction perpendicular to the longitudinal direction L.
- the width W of the maintenance space 200 may preferably increase monotonically as seen in the longitudinal direction L.
- a monotonically increasing width W of the maintenance space may be realized by a configuration in which at least part of a front half 128a, 128b of the first lateral side 126a, 126b of each respective primary body 120a, 120b diverges, as seen from front to rear, from the opposing first lateral side, while rear halves 130a, 130b of the first lateral sides 126a, 126b of the respective primary bodies 120a, 120b extend at least partially in parallel in a spaced apart relationship.
- the front ends 122a, 122b - and in particular the front ends of the opposing first lateral sides 126a, 126b - may be spaced somewhat apart (e.g. less than 50 cm), as in the depicted embodiments, but this is not necessary.
- opposing rear halves 130a 130b of the first, inner lateral sides 126a, 126b of the semiconductor processing systems 110a, 110b may preferably be spaced apart a certain minimum distance.
- This minimum distance which may be referred to as the minimum rear width Wmin.rear of the maintenance space, and which may be assessed when (i) the front ends 122a, 122b of the primary bodies 120a, 120b of the semiconductor processing systems 110a, 110b abut one another, and (ii) the longitudinal axes l a , of the primary bodies 120a, 120b extend substantially in parallel, may preferably be at least 0.5 meter, and more preferably at least 0.75 meter.
- a second lateral side 132a of the primary body 120a of the first semiconductor processing system 110a may face away from a second lateral side 132b of the primary body 120b of the second semiconductor processing system 110b.
- the second lateral sides 132a, 132b of the primary bodies 120a, 120b may be generally planar, and extend substantially in parallel.
- Each semiconductor processing system 110 may further include a utility module 170.
- the utility module 170 may comprise both a gas cabinet and a control cabinet. Together, the two cabinets may accommodate all primary electrical components and process gas facilities of the processing system 110 - including for example pressure gauges, flow controllers, valves, a process gas controller, and peripheral equipment of the semiconductor processing system 110 - and serve to distribute gas and electrical facilities to the semiconductor processing module 160, the wafer transfer module 150, and the I/O-station module 140 accommodated by the primary body 120. /
- the utility module 170 may be arranged at the rear end 124 of the primary body 120 of the semiconductor processing system 110.
- the utility module 170 of a semiconductor processing system 110 may be disposed behind and spaced apart from the rear end 124 of the primary body 120.
- additional maintenance space 202 may be made available between the rear end 124 of the primary body 120 and the utility module 170 to facilitate work on/replacement of large components, such as a vertical furnace reactor tube.
- the utility module 170 may be operably connected to the primary body 120 via an elevated duct 172 carrying the desired utility cables and conduits.
- the utility model is arranged at ground level; i.e. it is supported on the floor.
- the utility module 170 of a semiconductor processing system 110 may be arranged at an elevated level. In both these embodiments, the utility module 170 is supported by the primary body 120 of the system 110 and arranged spaced apart from and above the floor, so as to save floor area and/or improve accessibility of the primary body 120.
- a second assembly 100' similar to the assembly 100, may be placed side by side to assembly 100, in the same orientation and alignment as assembly 100, without a need to leave any maintenance space in between the respective assemblies.
Abstract
A semiconductor processing assembly (100) comprising a first and a second semiconductor processing system (110a, 110b), wherein each semiconductor processing system includes a primary body (120) that extends in a longitudinal direction (L) from a front end (122) to a rear end (124) and includes a first and a second lateral side (126, 132) extending therebetween, wherein the primary bodies (120) of the semiconductor processing systems (110a, 110b) are placed next to each other, such that the first lateral side (126a) of the primary body (120a) of the first semiconductor processing system (110a) opposes the first lateral side (126b) of the primary body (120b) of the second semiconductor processing system (110b), and wherein the opposing first lateral sides (126a, 126b) at least partially diverge, as seen in the longitudinal direction (L), to form a longitudinally extending maintenance space (200) between them.
Description
Title: Twin- assembly of diverging semiconductor processing systems
Field of the invention
The present invention relates to the field of semiconductor processing equipment, and more in particular to a vertical furnace-type semiconductor processing tool that facilitates servicing.
Background
A semiconductor processing system may typically be placed in a clean room because clean, dust free processing is required. A front side of the system may then be integrated with a wall of the clean room, and for instance extend substantially flush therewith. At its front side, the system may be fitted with substrate cassette I/O and storage equipment that is accessible from the clean room and so enables substrate cassettes accommodating semiconductor substrates to be exchanged between the clean room and the system. Somewhere between its front and rear ends, the system may further comprise a processing chamber or reactor, while a utility module, housing all of the system's primary electrical control components and process gas controls, may typically be provided at the system's rear end. In a vertical furnace-type semiconductor processing system for batch processing wafers, the reactor is formed by a vertical tube furnace.
In production environments, vertical furnace-type semiconductor processing systems are preferably placed next to each other, side by side, such that the lateral sides of the system face and abut one another and the joint footprint of the systems is minimized. A drawback of this configuration is that access to all but the outermost systems in a single row of systems is possible only via their respective front and rear ends, and not via their lateral sides. With an eye to maintenance, this limited access is problematic, not in the least because the utility modules provided at the rear sides of the systems may further hinder access to the vertical furnace reactors during maintenance operations. Replacement of a fairly large component like a quartz process tube,
for instance, requires a proper amount of handling and maneuvering space, and a combined gas and control cabinet may pose to be a significant obstacle.
It is therefore an object of the present invention to provide for a vertical furnace-type semiconductor processing system architecture that overcomes the problems described above and that allows adequate access to all furnace parts for maintenance while ensuring a minimal footprint.
Summary of the invention
To this end, a first aspect of the present invention is directed to a semiconductor processing assembly. The assembly may comprise a first and a second semiconductor processing system. Each semiconductor processing system may include a primary body that extends in a longitudinal direction from a front end to a rear end, and that includes a first and a second lateral side extending therebetween. The primary bodies of the semiconductor processing systems may be placed next to each other, such that the first lateral side of the primary body of the first semiconductor processing system opposes or faces the first lateral side of the primary body of the second semiconductor processing system. The opposing first lateral sides of the primary bodies may at least partially diverge, as seen in the longitudinal direction, so as to form a longitudinally extending maintenance space between them.
The presently disclosed semiconductor processing assembly architecture recognizes that elongate semiconductor processing systems are typically modular in nature, and that the different functional modules of a system which are concatenated in the system's longitudinal direction, need not necessarily have a same width (measured transverse to the longitudinal direction). It is therefore possible to concatenate the modules of a single system in order of decreasing width. When two such processing systems are paired in an assembly, in which the systems are arranged next to each other, their opposing first lateral sides may diverge from another as seen from the front to the rear of the semiconductor processing system 110, thereby defining
a gradually widening inner maintenance space between them. The maintenance space may thus provide access to the functional modules of the systems via the first lateral sides, and offer space for handling large components, such as vertical furnace reactor tubes.
These and other features and advantages of the invention will be more fully understood from the following detailed description of certain embodiments of the invention, taken together with the accompanying drawings, which are meant to illustrate and not to limit the invention. Brief description of the drawings
Fig. 1 is a schematic floor plan view of a first exemplary embodiment of a semiconductor processing assembly according to the present invention;
Fig. 2 is a schematic cross-sectional side view of the semiconductor processing assembly shown in Fig. 1;
Fig. 3 is a schematic floor plan view of a second exemplary embodiment of a semiconductor processing assembly according to the present invention;
Fig. 4 is a schematic cross-sectional side view of the semiconductor processing assembly shown in Fig. 3;
Fig. 5 is a schematic floor plan view of a third exemplary embodiment of a semiconductor processing assembly according to the present invention; and
Fig. 6 is a schematic cross-sectional side view of the semiconductor processing assembly shown in Fig. 5.
Detailed description
Below, the semiconductor processing system according to the present invention is described in general terms, where appropriate with reference to the exemplary embodiments shown in Figs.1-6.
The presently disclosed semiconductor processing assembly 100 may include a first semiconductor processing systems 110a and a second semiconductor processing system 110b. The two semiconductor processing systems 110a, 110b of the assembly 100 may be mirror images of one another with respect to their outer shape and/or their interior layout, but this need not necessarily be the case. Furthermore, the two semiconductor processing systems 110a, 110b may be operably interconnected, for instance to enable an exchange of substrates or substrate cassettes 300 between them; alternatively, they may be operationally independent of one another.
Elements of the respective processing systems 110a 110b of the assembly 100 will throughout this application be referred to using reference numerals including a suffix 'a' or Where elements of the respective systems 110a, 110b are referred to using reference numerals without a suffix 'a' or the reference is unspecific and applicable to the indicated elements of both systems.
Layout of a single semiconductor processing system
Each processing system 110 may include an elongate primary body 120 that extends in a longitudinal direction L from a front end 122 to a rear end 124. The primary body 120 may accommodate a plurality of functional modules, which may be arranged (and operably interconnected) in succession in the longitudinal direction L. As in the depicted embodiments, for instance, a primary body 120 of a processing system 110 may accommodate:
• a substrate cassette I/O-station 140 including at least one load port 142 to which a substrate cassette 300 is dockable. The substrate cassette
I/O-station 140 may be arranged at the front end 122 of the primary body 120;
• a substrate transfer module 150 comprising a substrate handling robot 152 configured to transfer substrates between a substrate cassette 300
docked to the load port 142 of the substrate cassette I/O-station 140 and a substrate processing module; and
• a substrate processing module 160 configured to process substrates received from the substrate transfer module 150. In the depicted embodiments, the substrate processing module 160 includes a vertical furnace, comprising a vertical wafer boat 162, a vertical furnace reactor 164 and a boat elevator 164. The boat elevator 166 is arranged at a first vertical level (ground level) of the system 110, while the vertical furnace reactor 164 is arranged at a second, elevated vertical level of the system 110, above the boat elevator 166, such that the boat elevator 166 may lift and lower the vertical wafer boat 162 into/from the vertical furnace reactor 164.
It is understood that the internal layout of the primary body 120 of a processing system 110 is not of primary importance to the present disclosure. Therefore, different embodiments of the presently disclosed semiconductor processing assembly 100 may include processing systems 110 with primary bodies 120 having a different internal layout than discussed here. The primary bodies 120 may, for instance accommodate different functional modules and/or functional modules in a different mutual arrangement.
In the depicted embodiments of the assembly 100, each processing system 110a, 110b is provided with a substrate cassette exchange station 500. The substrate cassette exchange station 500 is disposed in front of the primary body 120 of the respective processing system 110, and serves to exchange substrate cassettes 300 with (i) a global substrate cassette transport system of a processing facility in which the assembly 100 may be arranged (not shown), (ii) a substrate cassette stocker 400 that may be arranged at an elevated level, above the substrate transfer module 150 of the respective processing system 110, and (iii) the substrate cassette I/O-station 140 of the respective processing system 110. It is understood that the substrate cassette exchange stations 500
are an optional component of the presently disclosed assembly 100; the same applies to the substrate cassette stockers 400.
Geometry of a single semiconductor processing system
The primary body 120 of a processing system may define various sides, including a front side 123 at its front end 122, a rear side 125 at its rear end 124, and first and second lateral sides 126, 132 that extend generally longitudinally between the front and rear ends 122, 124 to interconnect the front and rear sides 123, 125.
The front and rear sides 123, 125 of a primary body 120 may typically be generally planar, and extend in parallel, in which case a longitudinal axis I of the primary body 120 may be considered to extend perpendicular to both sides 123, 125.
It is understood that the first and second lateral sides 126, 132 are situated at opposite sides of the primary body 120, such that they may be used to define a width w thereof, normally as the distance between them measured in a direction perpendicular to the longitudinal direction L. In a processing system 110 of the presently disclosed semiconductor processing assembly 100, the width w of a primary body 120 may typically decrease monotonically along the longitudinal direction L - i.e. as seen from the front tot the rear of the semiconductor processing system 110.
For ease of construction, both the first and second lateral side 126, 128 of a primary body 120 may be at least piecewise planar. That is, each lateral side 126, 132 may be defined by typically substantially vertically oriented, generally planar sections. In one embodiment, one or more of such planar sections may be defined by panels that are detachably or movably - e.g. hingeably or slidably - connected to a frame of the primary body 120, so as to facilitate lateral maintenance access to an interior of the primary body 120 through removal of one or more panels.
Adjacent planar sections of in particular the first lateral side 126 of a primary body 120 may include an angle to define a local fold, or bend in the respective lateral side. In the embodiment of Figs. 1-2, for instance, the first lateral side 126 of the primary body 120 of each respective system 110 includes three vertically oriented, generally planar sections, as is best seen in the floor plan view of Fig.1: there is a small planar section that is associated with the substrate cassette I/O-station 140 and that extends parallel to the longitudinal direction L; in addition, there are two large planar sections, one roughly associated with the substrate transfer module 150 and extending at an angle relative to the longitudinal direction L, and another roughly associated with the substrate processing module 160 and again extending parallel to the longitudinal direction L. As seen in the floor plan view, each two longitudinally adjacent sections include an angle, thereby defining a fold.
The second lateral side 128 of a primary body 120 may typically be substantially planar/straight, without folds or the like, and extend in parallel with a longitudinal axis I of the primary body. This ensures that the semiconductor processing systems 110 of different semiconductor processing assemblies 100 may be economically arranged side by side, with a minimal footprint.
Configuration of the assembly
Within the semiconductor processing assembly 100, the two primary bodies 120a, 120b of the semiconductor processing systems 110a, 110b may be arranged next to each other.
In this juxtaposed state, the longitudinal axes la, lb of the primary bodies 120a, 120b may extend in parallel, while the first lateral side 126a of the primary body 120a of the first semiconductor processing system 110a may oppose or face the first lateral side 126b of the primary body 120b of the second semiconductor processing system 110b. The primary bodies 120a, 120b may be configured such that their opposing first lateral sides 126a, 126b at least
partially diverge from one another, as seen in the longitudinal direction L, so as to define a longitudinally extending maintenance space 200 between them. In one embodiment, the opposing first lateral sides 126a, 126b may diverge mirror-symmetrically relative to a longitudinally extending (vertical) plane of symmetry M between the semiconductor processing systems 110a, 110b.
The longitudinally extending maintenance space 200 may be considered to have a width W, which may be defined as the distance between opposing first lateral sides 126a, 126b of the primary bodies 120a, 120b of the semiconductor processing systems 110a, 110b as measured in a direction perpendicular to the longitudinal direction L. The width W of the maintenance space 200 may preferably increase monotonically as seen in the longitudinal direction L. As in the depicted embodiments, for instance, a monotonically increasing width W of the maintenance space may be realized by a configuration in which at least part of a front half 128a, 128b of the first lateral side 126a, 126b of each respective primary body 120a, 120b diverges, as seen from front to rear, from the opposing first lateral side, while rear halves 130a, 130b of the first lateral sides 126a, 126b of the respective primary bodies 120a, 120b extend at least partially in parallel in a spaced apart relationship. Like the rear ends 124a, 124b of the primary bodies 120a, 120b, the front ends 122a, 122b - and in particular the front ends of the opposing first lateral sides 126a, 126b - may be spaced somewhat apart (e.g. less than 50 cm), as in the depicted embodiments, but this is not necessary.
To ensure proper (human) accessibility of the maintenance space 200 from the rear side of the assembly 100, opposing rear halves 130a 130b of the first, inner lateral sides 126a, 126b of the semiconductor processing systems 110a, 110b may preferably be spaced apart a certain minimum distance. This minimum distance, which may be referred to as the minimum rear width Wmin.rear of the maintenance space, and which may be assessed when (i) the front ends 122a, 122b of the primary bodies 120a, 120b of the semiconductor processing systems 110a, 110b abut one another, and (ii) the
longitudinal axes la, of the primary bodies 120a, 120b extend substantially in parallel, may preferably be at least 0.5 meter, and more preferably at least 0.75 meter.
Furthermore, in the juxtaposed state of the primary bodies 120a, 120b, a second lateral side 132a of the primary body 120a of the first semiconductor processing system 110a may face away from a second lateral side 132b of the primary body 120b of the second semiconductor processing system 110b. In a preferred embodiment, the second lateral sides 132a, 132b of the primary bodies 120a, 120b may be generally planar, and extend substantially in parallel.
Utility module
Each semiconductor processing system 110 may further include a utility module 170. The utility module 170 may comprise both a gas cabinet and a control cabinet. Together, the two cabinets may accommodate all primary electrical components and process gas facilities of the processing system 110 - including for example pressure gauges, flow controllers, valves, a process gas controller, and peripheral equipment of the semiconductor processing system 110 - and serve to distribute gas and electrical facilities to the semiconductor processing module 160, the wafer transfer module 150, and the I/O-station module 140 accommodated by the primary body 120. /
In general, the utility module 170 may be arranged at the rear end 124 of the primary body 120 of the semiconductor processing system 110.
In one embodiment, such as the embodiment of Figs. 1-2, the utility module 170 of a semiconductor processing system 110 may be disposed behind and spaced apart from the rear end 124 of the primary body 120. In this advantageous configuration, additional maintenance space 202 may be made available between the rear end 124 of the primary body 120 and the utility module 170 to facilitate work on/replacement of large components, such as a vertical furnace reactor tube. The utility module 170 may be operably
connected to the primary body 120 via an elevated duct 172 carrying the desired utility cables and conduits.
In the embodiment of Figs. 1-2, the utility model is arranged at ground level; i.e. it is supported on the floor. In other embodiments, however, such as the embodiments of Figs. 3-4 and 5-6, the utility module 170 of a semiconductor processing system 110 may be arranged at an elevated level. In both these embodiments, the utility module 170 is supported by the primary body 120 of the system 110 and arranged spaced apart from and above the floor, so as to save floor area and/or improve accessibility of the primary body 120.
A second assembly 100', similar to the assembly 100, may be placed side by side to assembly 100, in the same orientation and alignment as assembly 100, without a need to leave any maintenance space in between the respective assemblies.
Although illustrative embodiments of the present invention have been described above, in part with reference to the accompanying drawings, it is to be understood that the invention is not limited to these embodiments. Variations to the disclosed embodiments can be understood and effected by those skilled in the art in practicing the claimed invention, from a study of the drawings, the disclosure, and the appended claims. Reference throughout this specification to "one embodiment" or "an embodiment" means that a particular feature, structure or characteristic described in connection with the embodiment is included in at least one embodiment of the present invention. Thus, the appearances of the phrases "in one embodiment" or "in an embodiment" in various places throughout this specification are not necessarily all referring to the same embodiment. Furthermore, it is noted that particular features, structures, or characteristics of one or more embodiments may be combined in any suitable manner to form new, not explicitly described embodiments.
List of elements
100 semiconductor processing assembly
110 first (a) and second (b) semiconductor processing system
120a,b primary body of first (a) and second (b) processing system
122 front end
123 front side
124 rear end
125 rear side
126 first, inner lateral side
128 front half of first, inner lateral side
130 rear half of first, inner lateral side
132 second, outer lateral side
140 substrate cassette I/O-station
142 load port
150 substrate transfer module
152 substrate handling robot
160 substrate processing module / vertical furnace
162 vertical wafer boat
164 vertical furnace reactor
166 vertical furnace boat elevator
170 combined power and gas cabinet
172 duct
200 maintenance space
202 additional maintenance space, e.g. for work on vertical furnace reactor tube 300 substrate cassette
400 (elevated) substrate cassette stocker
500 substrate cassette exchange station
L longitudinal direction
longitudinal axis of semiconductor processing system
M plane of mirror symmetry
Claims
1. A semiconductor processing assembly (100) comprising a first and a second semiconductor processing system (110a, 110b), wherein each semiconductor processing system includes a primary body (120) that extends in a longitudinal direction (L) from a front end (122) to a rear end (124) and includes a first and a second lateral side (126, 132) extending therebetween, wherein the primary bodies (120a, 120b) of the semiconductor processing systems (110a, 110b) are placed next to each other, such that the first lateral side (126a) of the primary body (120a) of the first semiconductor processing system (110a) opposes the first lateral side (126b) of the primary body (120b) of the second semiconductor processing system (110b),
characterized in that the opposing first lateral sides (126a, 126b) at least partially diverge, as seen in the longitudinal direction (L), to form a longitudinally extending maintenance space (200) between them.
2. The semiconductor processing assembly according to claim 1, wherein at least part of a front half (128a, 128b) of the first lateral side (126a, 126b) of each respective primary body (120a, 120b) diverges from the opposing first lateral side.
3. The semiconductor processing assembly according to claim 1 or 2, wherein rear halves (130a, 130b) of the first lateral sides (126a, 126b) of the respective primary bodies (120a, 120b) at least partially extend in parallel in a spaced apart relationship.
4. The semiconductor processing assembly according to any of the claims 1-3, wherein a second lateral side (132a) of the primary body (120a) of the first semiconductor processing system (110a) faces away from a second
lateral side (132b) of the primary body (120b) of the second semiconductor processing system (110b), and
wherein said second lateral sides (132a, 132b) are substantially planar and extend substantially in parallel.
5. The semiconductor processing assembly according to any of the claims 1-4, wherein the primary body (120) of each semiconductor processing system (110) has a width (w), defined as a distance between the first and second lateral sides of the primary body, that decreases monotonically along the longitudinal direction (L) as seen from front to rear.
6. The semiconductor processing assembly according to any of the claims 1-5, wherein the longitudinally extending maintenance space (200) has a width (W), defined as a distance between opposing first lateral sides (126a, 126b) of the primary bodies (120a, 120b) of the semiconductor processing systems (110a, 110b), that increases monotonically along the longitudinal direction (L) as seen from front to rear.
7. The semiconductor processing assembly according to any of the claims 1-6, wherein a minimum rear width (Wmin.rear) of the longitudinally extending maintenance space (200), defined as a distance between opposing rear halves of first lateral sides of the semiconductor processing systems when the front ends (122a, 122b) of the primary bodies (120a, 120b) of the semiconductor processing systems (110a, 110b) abut one another while longitudinal axes (la, lb) of the primary bodies extend in parallel, is at least 0.5 meter, and more preferably at least 0.75 meter.
8. The semiconductor processing assembly according to any of the claims 1-7, wherein said opposing first lateral sides (126a, 126b) diverge mirror-symmetrically.
9. The semiconductor processing system according to claim 8, wherein the first semiconductor processing system (110a) is a mirror image of the second semiconductor processing system (110b).
10. The semiconductor processing assembly according to any of the claims 1-9, wherein the first lateral sides (126a, 126b) of the primary bodies (120a, 120b) of the semiconductor processing systems (110a, 110b) are substantially piecewise planar.
11. The semiconductor processing assembly according to any of the claims 1-10, wherein the primary body (120) of each semiconductor processing system (100) comprises:
• a substrate cassette I/O-station (140) including at least one load port (142) to which a substrate cassette (300) is dockable, said substrate cassette I/O-station being disposed at the front end (122) of the primary body;
• a substrate transfer module (150) comprising a substrate handling robot (152) configured to exchange substrates between a substrate cassette (300) docked to the load port (142) of the substrate cassette I/O-station (140) and a substrate processing module; and
• a substrate processing module (160), for instance including a vertical furnace, configured to process substrates received from the substrate transfer module (150).
12. The semiconductor processing assembly according to any of the claims 1-11, wherein each semiconductor processing system (110) further includes a utility module (170) that is disposed at the rear end (124) of its primary body (120), and configured to provide at least one of gas and electricity to the primary body (120).
13. The semiconductor processing assembly according to claim 12, wherein the utility module (170) of a respective semiconductor processing system (110) is disposed behind and spaced apart from the rear end (124) of its primary body (120).
14. The semiconductor processing assembly according to claim 13, wherein the utility module (170) of each respective semiconductor processing system (110) is arranged at an elevated level.
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US201361867189P | 2013-08-19 | 2013-08-19 | |
US61/867,189 | 2013-08-19 |
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WO2015026230A1 true WO2015026230A1 (en) | 2015-02-26 |
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PCT/NL2014/050565 WO2015026230A1 (en) | 2013-08-19 | 2014-08-19 | Twin-assembly of diverging semiconductor processing systems |
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Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11195688A (en) * | 1997-12-26 | 1999-07-21 | Mc Electronics Kk | Substrate treatment device |
JP2006319261A (en) * | 2005-05-16 | 2006-11-24 | Dainippon Screen Mfg Co Ltd | Substrate processing apparatus |
-
2014
- 2014-08-19 WO PCT/NL2014/050565 patent/WO2015026230A1/en active Application Filing
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11195688A (en) * | 1997-12-26 | 1999-07-21 | Mc Electronics Kk | Substrate treatment device |
JP2006319261A (en) * | 2005-05-16 | 2006-11-24 | Dainippon Screen Mfg Co Ltd | Substrate processing apparatus |
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US10943771B2 (en) | 2016-10-26 | 2021-03-09 | Asm Ip Holding B.V. | Methods for thermally calibrating reaction chambers |
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US11532757B2 (en) | 2016-10-27 | 2022-12-20 | Asm Ip Holding B.V. | Deposition of charge trapping layers |
US10720331B2 (en) | 2016-11-01 | 2020-07-21 | ASM IP Holdings, B.V. | Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
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US10714350B2 (en) | 2016-11-01 | 2020-07-14 | ASM IP Holdings, B.V. | Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
US11810788B2 (en) | 2016-11-01 | 2023-11-07 | Asm Ip Holding B.V. | Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
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US10934619B2 (en) | 2016-11-15 | 2021-03-02 | Asm Ip Holding B.V. | Gas supply unit and substrate processing apparatus including the gas supply unit |
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US11222772B2 (en) | 2016-12-14 | 2022-01-11 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11581186B2 (en) | 2016-12-15 | 2023-02-14 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus |
US11447861B2 (en) | 2016-12-15 | 2022-09-20 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus and a method of forming a patterned structure |
US11851755B2 (en) | 2016-12-15 | 2023-12-26 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus and a method of forming a patterned structure |
US11001925B2 (en) | 2016-12-19 | 2021-05-11 | Asm Ip Holding B.V. | Substrate processing apparatus |
US10784102B2 (en) | 2016-12-22 | 2020-09-22 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
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US10867788B2 (en) | 2016-12-28 | 2020-12-15 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US11390950B2 (en) | 2017-01-10 | 2022-07-19 | Asm Ip Holding B.V. | Reactor system and method to reduce residue buildup during a film deposition process |
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US11587821B2 (en) | 2017-08-08 | 2023-02-21 | Asm Ip Holding B.V. | Substrate lift mechanism and reactor including same |
US11417545B2 (en) | 2017-08-08 | 2022-08-16 | Asm Ip Holding B.V. | Radiation shield |
US10692741B2 (en) | 2017-08-08 | 2020-06-23 | Asm Ip Holdings B.V. | Radiation shield |
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USD900036S1 (en) | 2017-08-24 | 2020-10-27 | Asm Ip Holding B.V. | Heater electrical connector and adapter |
US11830730B2 (en) | 2017-08-29 | 2023-11-28 | Asm Ip Holding B.V. | Layer forming method and apparatus |
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US11581220B2 (en) | 2017-08-30 | 2023-02-14 | Asm Ip Holding B.V. | Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures |
US11056344B2 (en) | 2017-08-30 | 2021-07-06 | Asm Ip Holding B.V. | Layer forming method |
US11069510B2 (en) | 2017-08-30 | 2021-07-20 | Asm Ip Holding B.V. | Substrate processing apparatus |
US10607895B2 (en) | 2017-09-18 | 2020-03-31 | Asm Ip Holdings B.V. | Method for forming a semiconductor device structure comprising a gate fill metal |
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US10844484B2 (en) | 2017-09-22 | 2020-11-24 | Asm Ip Holding B.V. | Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
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US11094546B2 (en) | 2017-10-05 | 2021-08-17 | Asm Ip Holding B.V. | Method for selectively depositing a metallic film on a substrate |
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US11639811B2 (en) | 2017-11-27 | 2023-05-02 | Asm Ip Holding B.V. | Apparatus including a clean mini environment |
US11682572B2 (en) | 2017-11-27 | 2023-06-20 | Asm Ip Holdings B.V. | Storage device for storing wafer cassettes for use with a batch furnace |
US10872771B2 (en) | 2018-01-16 | 2020-12-22 | Asm Ip Holding B. V. | Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures |
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US11482412B2 (en) | 2018-01-19 | 2022-10-25 | Asm Ip Holding B.V. | Method for depositing a gap-fill layer by plasma-assisted deposition |
USD903477S1 (en) | 2018-01-24 | 2020-12-01 | Asm Ip Holdings B.V. | Metal clamp |
US11018047B2 (en) | 2018-01-25 | 2021-05-25 | Asm Ip Holding B.V. | Hybrid lift pin |
US10535516B2 (en) | 2018-02-01 | 2020-01-14 | Asm Ip Holdings B.V. | Method for depositing a semiconductor structure on a surface of a substrate and related semiconductor structures |
USD880437S1 (en) | 2018-02-01 | 2020-04-07 | Asm Ip Holding B.V. | Gas supply plate for semiconductor manufacturing apparatus |
USD913980S1 (en) | 2018-02-01 | 2021-03-23 | Asm Ip Holding B.V. | Gas supply plate for semiconductor manufacturing apparatus |
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US11081345B2 (en) | 2018-02-06 | 2021-08-03 | Asm Ip Holding B.V. | Method of post-deposition treatment for silicon oxide film |
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US11482418B2 (en) | 2018-02-20 | 2022-10-25 | Asm Ip Holding B.V. | Substrate processing method and apparatus |
US10658181B2 (en) | 2018-02-20 | 2020-05-19 | Asm Ip Holding B.V. | Method of spacer-defined direct patterning in semiconductor fabrication |
US10975470B2 (en) | 2018-02-23 | 2021-04-13 | Asm Ip Holding B.V. | Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment |
US11939673B2 (en) | 2018-02-23 | 2024-03-26 | Asm Ip Holding B.V. | Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment |
US11473195B2 (en) | 2018-03-01 | 2022-10-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus and a method for processing a substrate |
US11629406B2 (en) | 2018-03-09 | 2023-04-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate |
US11114283B2 (en) | 2018-03-16 | 2021-09-07 | Asm Ip Holding B.V. | Reactor, system including the reactor, and methods of manufacturing and using same |
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US10867786B2 (en) | 2018-03-30 | 2020-12-15 | Asm Ip Holding B.V. | Substrate processing method |
US11469098B2 (en) | 2018-05-08 | 2022-10-11 | Asm Ip Holding B.V. | Methods for depositing an oxide film on a substrate by a cyclical deposition process and related device structures |
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US11361990B2 (en) | 2018-05-28 | 2022-06-14 | Asm Ip Holding B.V. | Substrate processing method and device manufactured by using the same |
US11270899B2 (en) | 2018-06-04 | 2022-03-08 | Asm Ip Holding B.V. | Wafer handling chamber with moisture reduction |
US11837483B2 (en) | 2018-06-04 | 2023-12-05 | Asm Ip Holding B.V. | Wafer handling chamber with moisture reduction |
US11718913B2 (en) | 2018-06-04 | 2023-08-08 | Asm Ip Holding B.V. | Gas distribution system and reactor system including same |
US11286562B2 (en) | 2018-06-08 | 2022-03-29 | Asm Ip Holding B.V. | Gas-phase chemical reactor and method of using same |
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US11530483B2 (en) | 2018-06-21 | 2022-12-20 | Asm Ip Holding B.V. | Substrate processing system |
US11814715B2 (en) | 2018-06-27 | 2023-11-14 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
US11492703B2 (en) | 2018-06-27 | 2022-11-08 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
US11952658B2 (en) | 2018-06-27 | 2024-04-09 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
US11499222B2 (en) | 2018-06-27 | 2022-11-15 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
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US10612136B2 (en) | 2018-06-29 | 2020-04-07 | ASM IP Holding, B.V. | Temperature-controlled flange and reactor system including same |
US10755922B2 (en) | 2018-07-03 | 2020-08-25 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
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US10483099B1 (en) | 2018-07-26 | 2019-11-19 | Asm Ip Holding B.V. | Method for forming thermally stable organosilicon polymer film |
US11053591B2 (en) | 2018-08-06 | 2021-07-06 | Asm Ip Holding B.V. | Multi-port gas injection system and reactor system including same |
US10883175B2 (en) | 2018-08-09 | 2021-01-05 | Asm Ip Holding B.V. | Vertical furnace for processing substrates and a liner for use therein |
US10829852B2 (en) | 2018-08-16 | 2020-11-10 | Asm Ip Holding B.V. | Gas distribution device for a wafer processing apparatus |
US11430674B2 (en) | 2018-08-22 | 2022-08-30 | Asm Ip Holding B.V. | Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
US11024523B2 (en) | 2018-09-11 | 2021-06-01 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US11274369B2 (en) | 2018-09-11 | 2022-03-15 | Asm Ip Holding B.V. | Thin film deposition method |
US11804388B2 (en) | 2018-09-11 | 2023-10-31 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US11049751B2 (en) | 2018-09-14 | 2021-06-29 | Asm Ip Holding B.V. | Cassette supply system to store and handle cassettes and processing apparatus equipped therewith |
US11885023B2 (en) | 2018-10-01 | 2024-01-30 | Asm Ip Holding B.V. | Substrate retaining apparatus, system including the apparatus, and method of using same |
US11232963B2 (en) | 2018-10-03 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US11414760B2 (en) | 2018-10-08 | 2022-08-16 | Asm Ip Holding B.V. | Substrate support unit, thin film deposition apparatus including the same, and substrate processing apparatus including the same |
US10847365B2 (en) | 2018-10-11 | 2020-11-24 | Asm Ip Holding B.V. | Method of forming conformal silicon carbide film by cyclic CVD |
US10811256B2 (en) | 2018-10-16 | 2020-10-20 | Asm Ip Holding B.V. | Method for etching a carbon-containing feature |
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US11664199B2 (en) | 2018-10-19 | 2023-05-30 | Asm Ip Holding B.V. | Substrate processing apparatus and substrate processing method |
USD948463S1 (en) | 2018-10-24 | 2022-04-12 | Asm Ip Holding B.V. | Susceptor for semiconductor substrate supporting apparatus |
US10381219B1 (en) | 2018-10-25 | 2019-08-13 | Asm Ip Holding B.V. | Methods for forming a silicon nitride film |
US11735445B2 (en) | 2018-10-31 | 2023-08-22 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
TWI839398B (en) | 2018-10-31 | 2024-04-21 | 荷蘭商Asm Ip私人控股有限公司 | Substrate processing apparatus for processing substrates |
US11087997B2 (en) | 2018-10-31 | 2021-08-10 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
US11866823B2 (en) | 2018-11-02 | 2024-01-09 | Asm Ip Holding B.V. | Substrate supporting unit and a substrate processing device including the same |
US11499226B2 (en) | 2018-11-02 | 2022-11-15 | Asm Ip Holding B.V. | Substrate supporting unit and a substrate processing device including the same |
US11572620B2 (en) | 2018-11-06 | 2023-02-07 | Asm Ip Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
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US11411088B2 (en) | 2018-11-16 | 2022-08-09 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
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