WO2018008088A1 - 基板処理装置、ガスノズルおよび半導体装置の製造方法 - Google Patents

基板処理装置、ガスノズルおよび半導体装置の製造方法 Download PDF

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Publication number
WO2018008088A1
WO2018008088A1 PCT/JP2016/069897 JP2016069897W WO2018008088A1 WO 2018008088 A1 WO2018008088 A1 WO 2018008088A1 JP 2016069897 W JP2016069897 W JP 2016069897W WO 2018008088 A1 WO2018008088 A1 WO 2018008088A1
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WIPO (PCT)
Prior art keywords
nozzle
gas
slit
substrate
upstream
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PCT/JP2016/069897
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English (en)
French (fr)
Inventor
周平 西堂
隆史 佐々木
花島　建夫
吉田　秀成
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株式会社日立国際電気
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Application filed by 株式会社日立国際電気 filed Critical 株式会社日立国際電気
Priority to JP2018525862A priority Critical patent/JP6695975B2/ja
Priority to KR1020187011787A priority patent/KR102165711B1/ko
Priority to PCT/JP2016/069897 priority patent/WO2018008088A1/ja
Priority to TW106119665A priority patent/TWI648806B/zh
Publication of WO2018008088A1 publication Critical patent/WO2018008088A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers

Definitions

  • the present invention relates to a substrate processing apparatus, a gas nozzle, and a method for manufacturing a semiconductor device.
  • a vertical substrate processing apparatus that processes a plurality of substrates at once is used.
  • gas may be supplied to a substrate using a porous nozzle (for example, Patent Document 1).
  • the objective is to provide the technique which can improve the uniformity between the surfaces of a board
  • a processing chamber for processing a plurality of substrates A nozzle for supplying gas into the processing chamber, The nozzle is It has a slit that opens vertically, A technique is provided in which the slit is formed up to the apex of the tip of the gas nozzle.
  • (A) is a modified example of the nozzle in one embodiment of the present invention
  • (B) is a modified example of another nozzle in one embodiment of the present invention
  • (C) is a further example of the nozzle in one embodiment of the present invention.
  • (D) is a figure which shows each other modification of the nozzle in one Embodiment of this invention, respectively. It is a perspective view which shows roughly an example of the nozzle used suitably by 2nd Embodiment. It is a top view which shows roughly an example of the processing furnace used suitably by 2nd Embodiment. It is a figure which shows the simulation result of Si radical concentration distribution of the nozzle used suitably by 2nd Embodiment.
  • the substrate processing apparatus is configured as a vertical substrate processing apparatus (hereinafter referred to as a processing apparatus) 2 that performs a substrate processing process such as a heat treatment as one process of the manufacturing process in the method of manufacturing a semiconductor device (device).
  • a processing apparatus 2 includes a cylindrical reaction tube 10 and a heater 12 as a heating unit (heating mechanism) installed on the outer periphery of the reaction tube 10.
  • the reaction tube is made of, for example, quartz or SiC. Inside the reaction tube 10, a processing chamber 14 for processing a wafer W as a substrate is formed.
  • the reaction tube 10 is formed with a supply buffer chamber 10A as a gas supply chamber and an exhaust buffer chamber 10B facing each other so as to protrude outward.
  • the supply buffer chamber 10A and the exhaust buffer chamber 10B are partitioned into a plurality of spaces by partition walls 10C.
  • nozzles 44a and 44b to be described later are respectively installed in each compartment in the supply buffer chamber 10A.
  • a plurality of horizontally long slits 10D are respectively formed on the inner wall side (processing chamber 14 side) of the supply buffer chamber 10A and the exhaust buffer chamber 10B.
  • the reaction tube 10 is provided with a temperature detector 16 as a temperature detector. The temperature detector 16 is erected along the outer wall of the reaction tube 10.
  • a cylindrical manifold 18 is connected to a lower end opening of the reaction tube 10 via a seal member 20 such as an O-ring to support the lower end of the reaction tube 10.
  • the manifold 18 is made of a metal such as stainless steel.
  • the lower end opening of the manifold 18 is opened and closed by a disk-shaped lid 22.
  • the lid part 22 is made of, for example, metal.
  • a sealing member 20 such as an O-ring is installed on the upper surface of the lid portion 22 so that the inside of the reaction tube 10 and the outside air are hermetically sealed.
  • a heat insulating portion 24 having a hole formed in the center is placed on the lid portion 22, a heat insulating portion 24 having a hole formed in the center is placed.
  • the heat insulating part 24 is made of, for example, quartz.
  • the processing chamber 14 stores therein a boat 26 as a substrate holder for supporting a plurality of, for example, 25 to 150 wafers W vertically in a shelf shape.
  • the boat 26 is made of, for example, quartz or SiC.
  • the boat 26 is supported above the heat insulating portion 24 by a rotating shaft 28 that passes through the lid portion 22 and the heat insulating portion 24.
  • a magnetic fluid seal is provided at a portion of the lid portion 22 through which the rotation shaft 28 passes, and the rotation shaft 28 is connected to a rotation mechanism 30 installed below the lid portion 22.
  • the rotating shaft 28 is configured to be rotatable in a state where the inside of the reaction tube 10 is hermetically sealed.
  • the lid portion 22 is driven in the vertical direction by a boat elevator 32 as a lifting mechanism. As a result, the boat 26 and the lid portion 22 are integrally moved up and down, and the boat 26 is carried into and out of the reaction tube 10.
  • the processing apparatus 10 includes a gas supply mechanism 34 that supplies a gas used for substrate processing into the processing chamber 14.
  • the gas supplied by the gas supply mechanism 34 is changed according to the type of film to be formed.
  • the gas supply mechanism 34 includes a source gas supply unit, a reaction gas supply unit, and an inert gas supply unit.
  • the raw material gas supply unit includes a gas supply pipe 36a.
  • a gas flow controller (MFC) 38a which is a flow rate controller (flow rate control unit), and a valve 40a, which is an on-off valve, are provided in order from the upstream direction. It has been.
  • the gas supply pipe 36 a is connected to a nozzle 44 a that penetrates the side wall of the manifold 18.
  • the nozzle 44a is erected in the supply buffer chamber 10A in the vertical direction, and has a vertically long slit 45a as a gas supply port that opens toward the wafer W held by the boat 26.
  • the source gas is diffused into the supply buffer chamber 10A through the slit 45a of the nozzle 44a, and the source gas is supplied to the wafer W through the slit 10D of the supply buffer chamber 10A. Details of the nozzle 44a will be described later.
  • the reaction gas is supplied to the wafer W from the reaction gas supply unit through the supply pipe 36b, the MFC 38b, the valve 40b, the nozzle 44b, and the slit 10D with the same configuration.
  • the nozzle 44b a plurality of gas supply holes 45b that open toward the wafer W held by the boat 26 are formed.
  • the inert gas is supplied to the wafer W through the supply pipes 36c and 36d, the MFCs 38c and 38d, the valves 40c and 40d, the nozzles 44a and 44b, and the slit 10D.
  • An exhaust pipe 46 is attached to the reaction tube 10 so as to communicate with the exhaust buffer chamber 10B.
  • the exhaust pipe 46 is provided with a pressure sensor 48 as a pressure detector (pressure detector) for detecting the pressure in the processing chamber 14 and an APC (Auto Pressure Controller) valve 50 as a pressure regulator (pressure regulator).
  • a vacuum pump 52 as an evacuation device is connected.
  • Rotating mechanism 30, boat elevator 32, MFCs 38a to 38d of gas supply mechanism 34, valves 40a to 40d, and APC valve 50 are electrically connected to controller 100 for controlling them.
  • the controller 100 is composed of, for example, a microprocessor (computer) provided with a CPU, and is configured to control the operation of the processing device 2.
  • a microprocessor computer
  • an input / output device 102 configured as a touch panel or the like is connected to the controller 100.
  • the controller 100 is connected to a storage unit 104 as a storage medium.
  • the storage unit 104 stores a control program for controlling the operation of the processing device 10 and a program (also referred to as a recipe) for causing each component unit of the processing device 2 to execute processing according to processing conditions in a readable manner.
  • the control program for controlling the operation of the processing device 10
  • a program also referred to as a recipe
  • the storage unit 104 may be a storage device (hard disk or flash memory) built in the controller 100, or a portable external recording device (magnetic disk such as magnetic tape, flexible disk or hard disk, CD or DVD, etc. It may be an optical disk, a magneto-optical disk such as an MO, or a semiconductor memory such as a USB memory or a memory card. Further, the program may be provided to the computer using a communication means such as the Internet or a dedicated line. The program is read from the storage unit 104 according to an instruction from the input / output device 102 as necessary, and the controller 100 executes processing according to the read recipe, so that the processing device 2 Under the control of 100, a desired process is executed.
  • a storage device hard disk or flash memory
  • a portable external recording device magnetic disk such as magnetic tape, flexible disk or hard disk, CD or DVD, etc. It may be an optical disk, a magneto-optical disk such as an MO, or a semiconductor memory such as a USB memory or a memory card.
  • the program may be
  • silicon nitride (SiN) is formed on the wafer W by supplying HCDS (Si 2 Cl 6 : hexachlorodisilane) gas as a source gas and NH 3 (ammonia) gas as a reaction gas to the wafer W.
  • HCDS Si 2 Cl 6 : hexachlorodisilane
  • NH 3 ammonia
  • the processing chamber 14 is evacuated (reduced pressure) by the vacuum pump 52 so that the inside of the processing chamber 14 has a predetermined pressure (degree of vacuum).
  • the pressure in the processing chamber 14 is measured by the pressure sensor 48, and the APC valve 50 is feedback-controlled based on the measured pressure information.
  • the wafer W in the processing chamber 14 is heated by the heater 12 so as to reach a predetermined temperature.
  • the power supply to the heater 12 is feedback-controlled based on the temperature information detected by the temperature detector 16 so that the processing chamber 14 has a predetermined temperature distribution. Further, the rotation of the boat 26 and the wafer W by the rotation mechanism 30 is started.
  • the HCDS gas is supplied to the wafer W in the processing chamber 14.
  • the HCDS gas is controlled to have a desired flow rate by the MFC 38a, and is supplied into the processing chamber 14 through the gas supply pipe 36a, the nozzle 44a, and the slit 10D.
  • NH 3 gas is supplied to the wafer W in the processing chamber 14.
  • the NH 3 gas is controlled to have a desired flow rate by the MFC 38b, and is supplied into the processing chamber 14 through the gas supply pipe 36b, the nozzle 44b, and the slit 10D.
  • a SiN film having a predetermined composition and a predetermined film thickness can be formed on the wafer W by performing a cycle for performing the above-described four steps a predetermined number of times (one or more times).
  • processing conditions for forming the SiN film on the wafer W include the following. Processing temperature (wafer temperature): 300 ° C. to 700 ° C. Processing pressure (processing chamber pressure): 1 Pa to 4000 Pa, HCDS gas: 100 sccm to 10,000 sccm, NH 3 gas: 100 sccm to 10,000 sccm, N 2 gas: 100 sccm to 10,000 sccm, By setting each processing condition to a value within the respective range, it is possible to appropriately progress the film forming process.
  • the nozzle 44a is a long nozzle whose tip is formed in a dome shape, and an elongated slit 45a serving as a gas supply port along the wafer arrangement direction on the side surface (wafer W side) of the nozzle 44a. Is formed.
  • the length of the slit 45a is preferably longer than the arrangement length of the wafers W. For example, the length obtained by adding the length between the wafers W (between the pitches) up and down to the arrangement length of the wafers W is preferable.
  • the position of the upper end of the slit 45 a is higher than the height position of the uppermost wafer W held by the boat 26, and the position of the lower end of the slit 45 a is the lowermost wafer W held by the boat 26. It is preferable to form so as to be lower than the height position. With such a configuration, the gas can be supplied in an equal amount in the arrangement direction of the wafers W.
  • the width of the slit is preferably 0.5 mm or more and 3 mm or less (0.5 mm to 3 mm), more preferably 1 to 2 mm.
  • the width of the slit is preferably 0.02 to 0.2 times (0.02 to 0.2 times) the inner diameter of the nozzle 44a, and more preferably 0.04 to 0.13. Is double. If the slit width is narrower than 0.5 mm (less than 0.02 times the inner diameter of the nozzle 44a), the nozzle internal pressure will increase. Further, when the slit width is wider than 3 mm (when it is larger than 0.2 times the inner diameter of the nozzle 44a), the film formation uniformity of the wafer W is deteriorated.
  • the slit width 0.5 mm to 3 mm (0.02 to 0.2 times the inner diameter of the nozzle 44a)
  • the width of the slit to 1 to 2 mm (0.04 to 0.13 times the inner diameter of the nozzle 44a)
  • the film formation uniformity can be further improved.
  • the slit 45a of the nozzle 44a is formed up to the apex of the tip (dome-shaped ceiling). With such a configuration, it is possible to suppress gas retention at the tip portion in the nozzle 44a. Moreover, the residual gas in the nozzle 44a can be efficiently purged, and productivity can be improved. Further, by supplying the gas toward the upper part in the supply buffer chamber 10A, it is possible to suppress the stagnation of the gas in the upper part of the supply buffer chamber 10A. Further, gas diffusion can be made uniform in the vertical direction in the supply buffer chamber 10A.
  • the simulation was performed assuming that the processing chamber temperature was 650 ° C., the processing chamber pressure was 5 Pa, and HCDS gas was allowed to flow from each nozzle.
  • the slit nozzle can significantly lower the nozzle internal pressure than the porous nozzle. Further, when the gas flow rate is doubled in the multi-hole nozzle, the internal pressure of the nozzle is also doubled, and the internal pressure of the nozzle remains high. On the other hand, the nozzle internal pressure of the slit nozzle remains low even if the gas flow rate is doubled. That is, in the slit nozzle, even if the gas flow rate is increased, it can be understood that the internal pressure of the nozzle can be maintained at a pressure lower than a predetermined pressure at which the gas decomposes in the nozzle. Further, the wider the slit width of the slit nozzle, the lower the nozzle internal pressure.
  • the flow velocity distribution between the faces changes greatly. That is, when the gas flow rate is increased, the flow rate of the lower wafer is hardly changed, while the flow rate of the upper wafer is increased.
  • the gas spout height is increased by increasing the gas flow rate, so that a large amount of gas flows into the upper wafer, and the gas flow rate is increased.
  • the gas flow rate since there is no change in the amount of gas flow in the lower wafer, the gas flow rate hardly changes.
  • the shape of the flow velocity distribution between the surfaces hardly changes and the flow velocity is increased as a whole. That is, by using the slit nozzle, the gas flow rate can be changed while ensuring the flow velocity distribution between the surfaces.
  • a gas film is formed in the nozzle, which may become a particle generation source.
  • the nozzle of the present invention it is possible to suppress the increase in the nozzle internal pressure, and thus it is possible to suppress the generation of particles.
  • (3) Uniformity between surfaces can be improved by rectifying the gas in two stages. The gas supplied from the nozzle Rectified by the nozzle slit and flown uniformly, and further rectified by another step in the slit of the supply buffer chamber, it is possible to supply the wafer with a uniform concentration in the vertical direction.
  • the nozzle in this embodiment is not limited to the above-described aspect, and can be changed to an aspect such as the following modification.
  • the slit 45a may be formed not to the apex of the tip but to the rear side (opposite side) beyond the apex.
  • the gas can be directly supplied also to the upper corner of the buffer chamber 10A where gas tends to stay, so that the gas can be prevented from staying in the corner and the film quality can be improved.
  • the width above the slit 45a (for example, about 1/3 of the upper part of the slit 45a) may be formed larger than the width below. With such a configuration, the gas flow rate in the upper part can be increased, and the uniformity between surfaces can be improved.
  • the upper end of the slit 45a may be opened. At this time, the slit 45a may not be formed up to the upper end.
  • the gas flow rate in the upper part can be increased, and the uniformity between surfaces can be improved.
  • the gas retention in a nozzle can be suppressed and the characteristic of a film
  • the slit may be divided into a plurality of slits. With such a configuration, the strength of the nozzle can be improved.
  • the nozzle 44a of the second embodiment will be described.
  • the shape of the slit 45a is configured in the same manner as in the first embodiment.
  • the nozzle 44 a is formed in an inverted U-shape that rises upward and is folded downward by the folding portion 70.
  • a slit 45 a as a gas supply port is formed in the downstream portion 72 on the downstream side of the folded portion 70.
  • the gas can be heated by the heater 12 in the upstream portion 74 upstream of the folded portion 70. Since the gas can be efficiently heated in the upstream portion 74, the gas can be supplied to the wafer W in a desired decomposition state.
  • the decomposition state of the gas can be a molar fraction of 10% or less between the upper and lower sides. If the decomposition state of the gas is greater than 10% in terms of the molar fraction between the upper and lower sides, the inter-surface uniformity will be adversely affected.
  • a base 78 connected to the gas supply pipe is formed below the upstream portion 74. Further, an inclined portion 76 is formed so as to connect the base portion 78 and the upstream portion 74.
  • the upstream portion 74, the downstream portion 72, and the base portion 78 are formed in parallel to each other.
  • Nozzle 44a is in a front view, configured to be positioned between the center line C 2 and the center line C 3 of the downstream portion 72 of the center line C 1 of the base portion 78 is the upstream portion 74.
  • the center line C 1 of the base portion 78 is positioned on the outer wall inside the upstream portion 74
  • the center line C 2 of the upstream portion 74 is positioned on the outer wall outside the base portion 78.
  • the nozzle 44a can be stably supported, and the gas flow in the nozzle 44a can be made smooth.
  • the formation position of the slit 45a of the nozzle 44a in the second embodiment is shifted in the horizontal direction from the formation position of the slit of the nozzle in the first embodiment. That is, in the first embodiment, the slits on the center line C 1 of the base portion 78 of the second embodiment is formed.
  • the slit 45 a is formed on the center line C 3 of the downstream portion 72.
  • the downstream portion 72 is formed by extending downward to a position where the wafer region can be covered.
  • the distal end portion of the downstream portion 72 is formed to be below the same height position as the lower plate of the boat 26.
  • the folded portion 70 is formed so as to be equal to or higher than the upper plate of the boat 26. With such a configuration, the slit 45a can be formed longer than the arrangement length of the wafers W.
  • the nozzle 44a is installed obliquely in the supply buffer chamber 10A so that the slit 45a faces the center of the wafer W. That is, the nozzle 44a is installed so that the center of the upstream portion 74 and the center of the downstream portion 72 are positioned on a virtual circle R having a radius r as a line connecting the center of the adjacent nozzle 44b and the center of the wafer W. Is done.
  • the nozzle 44a is preferably an angle between the lines L 1 and the line L 2 is disposed so that 0 degrees to 90 degrees.
  • the upstream portion 74 may be disposed closer to the heater 12 than the downstream portion 72, and the downstream portion 72 may be disposed closer to the wafer W than the upstream portion 74.
  • the angle between the line L 1 and the line L 2 is at right angles to.
  • Slit 45a in plan view is preferably formed in a region of the wafer W side than the line L 1.
  • the slits 45a in plan view, relative to the line L 1 are preferably formed in a range of 0 degrees to 180 degrees counterclockwise (semicircle). That is, not on the center line C 3 of the downstream portion 72 in the front view it may be formed by offset upstream portion 74 side (inside) or outside the center line C 3.
  • the nozzles 44a, the line L 1 in the case where the angle between the line L 2 is disposed so that 0 degrees to 90 degrees, toward the wafer W center gas Can be supplied.
  • simulation results of the nozzle (slit nozzle) in the first embodiment and the nozzle (U-shaped slit nozzle) in the second embodiment will be described.
  • a simulation was performed using HCDS gas.
  • the use of a U-shaped slit nozzle can further improve the inter-surface uniformity of the Si radical concentration.
  • the decomposition state of the HCDS gas between the upper and lower sides can be made more uniform in the central portion of the wafer.
  • the source gas is decomposed at the tip portion of the U-shaped slit nozzle, since the source gas is decomposed at the lower part of the wafer, the influence on the uniformity between the surfaces can be reduced. . That is, as shown in FIG. 11, the variation in the partial pressure of the Si radical concentration between the surfaces can be made flatter.
  • a normal nozzle such as a multi-hole nozzle, that is, a nozzle (straight nozzle) configured with an upstream portion that does not include a folded portion and a downstream portion
  • the residence time of the gas in the nozzle becomes longer toward the nozzle tip. Therefore, gas decomposition is promoted. Therefore, in a normal nozzle, the decomposed components increase in the upper part.
  • the decomposition component gas concentration can be reversed upside down from the normal slit nozzle, and the decomposition component gas concentration can be increased below the U-shaped slit nozzle.
  • the U-shaped slit nozzle can increase the gas residence time in the nozzle as compared with the straight nozzle.
  • the nozzle in 2nd Embodiment is not limited to the above-mentioned aspect, It can change into an aspect like the modification shown below.
  • a slit may be formed in the upstream portion 74 as well.
  • the width of the slit in the upstream portion 74 may be narrower than the width of the slit in the downstream portion 72.
  • the upstream portion 74 may be formed with a hole instead of a slit. With such a configuration, gas can be supplied to the wafer W in a desired decomposition state.
  • the length of the slit 45 a may be shorter than the arrangement length of the wafers W.
  • the position of the upper end of the slit 45 a is the height position of the uppermost to middle wafers W held by the boat 26, and the position of the lower end of the slit 45 a is held by the boat 26. You may form so that it may become lower than the height position of W.
  • the length of the slit 45a may be a length that covers the array length of the wafers W held in the lower to middle stages. With such a configuration, it is possible to suppress an excessive supply of gas to the wafer W held in the upper stage, and it is possible to improve inter-surface uniformity.
  • HCDS gas is used as the source gas
  • the present invention is not limited to such an aspect.
  • this nozzle for a gas in which the decomposition of the raw material gas affects the uniformity between the wafer surfaces.
  • the decomposition temperature of the source gas is close to the process temperature.
  • inorganic halosilane such as DCS (SiH 2 Cl 2 : dichlorosilane) gas, MCS (SiH 3 Cl: monochlorosilane) gas, TCS (SiHCl 3 : trichlorosilane) gas, etc.
  • Non-halogen group such as source gas, 3DMAS (Si [N (CH 3 ) 2 ] 3 H: trisdimethylaminosilane) gas, BTBAS (SiH 2 [NH (C 4 H 9 )] 2 : Bisthal butylaminosilane) gas, etc.
  • a halogen group-free inorganic silane source gas such as an amino-based (amine-based) silane source gas, MS (SiH 4 : monosilane) gas, or DS (Si 2 H 6 : disilane) gas.
  • the present invention provides titanium (Ti), zirconium (Zr), hafnium (Hf), tantalum (Ta), niobium (Nb), aluminum (Al), molybdenum (Mo), tungsten (W) on the wafer W.
  • the present invention can also be suitably applied to the case of forming a film containing a metal element such as

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Abstract

［課題］　基板の面間均一性を向上させることが可能となる。　［解決手段］　複数枚の基板を処理する処理室と、処理室内にガスを供給するノズルと、を備え、ノズルは、縦方向に開口したスリットを有し、スリットは、ノズルの先端部の頂点まで形成されている。

Description

基板処理装置、ガスノズルおよび半導体装置の製造方法
　本発明は、基板処理装置、ガスノズルおよび半導体装置の製造方法に関するものである。
　半導体装置（デバイス）の製造工程における基板処理では、例えば、複数枚の基板を一括して処理する縦型基板処理装置が使用されている。縦型基板処理装置では多孔ノズルを用いて基板に対しガスを供給することがある（例えば、特許文献１）。
特開２００４－６５５１号公報
　しかしながら、多孔ノズルの形状とガスの種類によっては、多孔ノズル内でガスが過剰に分解してしまい、基板の面間均一性に悪影響を及ぼすことがある。本発明はこのような事情に鑑みてなされたものであり、その目的は、基板の面間均一性を向上させることが可能な技術を提供することにある。
　本発明の一態様によれば、
　複数枚の基板を処理する処理室と、
　前記処理室内にガスを供給するノズルと、を備え、
　前記ノズルは、
　縦方向に開口したスリットを有し、
　前記スリットは、前記ガスノズルの先端部の頂点まで形成されている技術が提供される。
　本発明によれば、基板の面間均一性を向上させることが可能となる。
本発明の実施形態で好適に用いられる基板処理装置の一例を概略的に示す縦断面図である。 本発明の実施形態で好適に用いられる処理炉の一例を概略的に示す平面図である。 本発明の実施形態で好適に用いられるノズルの一例を概略的に示す斜視図である。 各ノズル形状におけるガス流量とノズル内圧のシミュレーション結果を示す図である。 各ノズル形状におけるウエハ中央のガス流速のシミュレーション結果を示す図である。 各ノズル形状におけるウエハ中央のガス流速のシミュレーション結果を示す図である。 （Ａ）は本発明の一実施形態におけるノズルの変形例を、（Ｂ）は本発明の一実施形態における他のノズルの変形例を、（Ｃ）は本発明の一実施形態におけるノズルのさらに他の変形例を、（Ｄ）は本発明の一実施形態におけるノズルのさらに他の変形例をそれぞれ示す図である。 第２の実施形態で好適に用いられるノズルの一例を概略的に示す斜視図である。 第２の実施形態で好適に用いられる処理炉の一例を概略的に示す平面図である。 第２の実施形態で好適に用いられるノズルのＳｉラジカル濃度分布のシミュレーション結果を示す図である。 第２の実施形態で好適に用いられるノズルのＳｉラジカル濃度分布のシミュレーション結果を示す図である。 （Ａ）は本発明の第２の実施形態におけるノズルの変形例を、（Ｂ）は本発明の第２の実施形態における他のノズルの変形例をそれぞれ示す図である。
　以下、図面を参照しながら、本発明の限定的でない例示の実施形態について説明する。全図面中、同一または対応する構成については、同一または対応する参照符号を付し、重複する説明を省略する。
　本実施形態において、基板処理装置は、半導体装置（デバイス）の製造方法における製造工程の一工程として熱処理等の基板処理工程を実施する縦型基板処理装置（以下、処理装置と称する）２として構成されている。図１に示すように、処理装置２は、円筒形状の反応管１０と、反応管１０の外周に設置された加熱手段（加熱機構）としてのヒータ１２とを備える。反応管は、例えば石英やＳｉＣにより形成される。反応管１０の内部には、基板としてのウエハＷを処理する処理室１４が形成される。
　図２に示すように、反応管１０には、外方に突出するようにガス供給室としての供給バッファ室１０Ａと排気バッファ室１０Ｂが対面して形成されている。供給バッファ室１０Ａ内および排気バッファ室１０Ｂ内は、隔壁１０Ｃによって複数の空間に区画されている。供給バッファ室１０Ａ内の各区画には、後述するノズル４４ａ、４４ｂがそれぞれ設置される。供給バッファ室１０Ａおよび排気バッファ室１０Ｂの内壁側（処理室１４側）には、複数の横長形状のスリット１０Ｄがそれぞれ形成されている。反応管１０には、温度検出器としての温度検出部１６が設置される。温度検出部１６は、反応管１０の外壁に沿って立設されている。
　図１に示すように、反応管１０の下端開口部には、円筒形のマニホールド１８が、Ｏリング等のシール部材２０を介して連結され、反応管１０の下端を支持している。マニホールド１８は、例えばステンレス等の金属により形成されている。マニホールド１８の下端開口部は円盤状の蓋部２２によって開閉される。蓋部２２は、例えば金属により形成されている。蓋部２２の上面にはＯリング等のシール部材２０が設置されており、これにより、反応管１０内と外気とが気密にシールされている。蓋部２２上には、中央に上下に亘って孔が形成された断熱部２４が載置されている。断熱部２４は、例えば石英により形成されている。
　処理室１４は、複数枚、例えば２５～１５０枚のウエハＷを垂直に棚状に支持する基板保持具としてのボート２６を内部に収納する。ボート２６は、例えば石英やＳｉＣより形成される。ボート２６は、蓋部２２および断熱部２４を貫通する回転軸２８により、断熱部２４の上方に支持される。蓋部２２の回転軸２８が貫通する部分には、例えば、磁性流体シールが設けられ、回転軸２８は蓋部２２の下方に設置された回転機構３０に接続される。これにより、回転軸２８は反応管１０の内部を気密にシールした状態で回転可能に構成される。蓋部２２は昇降機構としてのボートエレベータ３２により上下方向に駆動される。これにより、ボート２６および蓋部２２が一体的に昇降され、反応管１０に対してボート２６が搬入出される。
　処理装置１０は、基板処理に使用されるガスを処理室１４内に供給するガス供給機構３４を備えている。ガス供給機構３４が供給するガスは、成膜される膜の種類に応じて換えられる。ここでは、ガス供給機構３４は、原料ガス供給部、反応ガス供給部および不活性ガス供給部を含む。
　原料ガス供給部は、ガス供給管３６ａを備え、ガス供給管３６ａには、上流方向から順に、流量制御器（流量制御部）であるマスフローコントローラ（ＭＦＣ）３８ａおよび開閉弁であるバルブ４０ａが設けられている。ガス供給管３６ａはマニホールド１８の側壁を貫通するノズル４４ａに接続される。ノズル４４ａは、供給バッファ室１０Ａ内に上下方向に沿って立設し、ボート２６に保持されるウエハＷに向かって開口するガス供給口としての縦長形状のスリット４５ａが形成されている。ノズル４４ａのスリット４５ａを通して供給バッファ室１０Ａ内に原料ガスが拡散され、供給バッファ室１０Ａのスリット１０Ｄを介してウエハＷに対して原料ガスが供給される。ノズル４４ａの詳細については後述する。
　以下、同様の構成にて、反応ガス供給部からは、供給管３６ｂ、ＭＦＣ３８ｂ、バルブ４０ｂ、ノズル４４ｂおよびスリット１０Ｄを介して、反応ガスがウエハＷに対して供給される。ノズル４４ｂには、ボート２６に保持されるウエハＷに向かって開口する複数のガス供給孔４５ｂが形成されている。不活性ガス供給部からは、供給管３６ｃ、３６ｄ、ＭＦＣ３８ｃ、３８ｄ、バルブ４０ｃ、４０ｄ、ノズル４４ａ、４４ｂおよびスリット１０Ｄを介して、ウエハＷに対して不活性ガスが供給される。
　反応管１０には、排気バッファ室１０Ｂに連通するように、排気管４６が取り付けられている。排気管４６には、処理室１４内の圧力を検出する圧力検出器（圧力検出部）としての圧力センサ４８および圧力調整器（圧力調整部）としてのＡＰＣ（Ａｕｔｏ  Ｐｒｅｓｓｕｒｅ  Ｃｏｎｔｒｏｌｌｅｒ）バルブ５０を介して、真空排気装置としての真空ポンプ５２が接続されている。このような構成により、処理室１４内の圧力を処理に応じた処理圧力とすることができる。
　回転機構３０、ボートエレベータ３２、ガス供給機構３４のＭＦＣ３８ａ～ｄおよびバルブ４０ａ～ｄ、ＡＰＣバルブ５０には、これらを制御するコントローラ１００が電気的に接続されている。コントローラ１００は、例えば、ＣＰＵを備えたマイクロプロセッサ（コンピュータ）からなり、処理装置２の動作を制御するよう構成されている。コントローラ１００には、例えばタッチパネル等として構成された入出力装置１０２が接続されている。
　コントローラ１００には記憶媒体としての記憶部１０４が接続されている。記憶部１０４には、処理装置１０の動作を制御する制御プログラムや、処理条件に応じて処理装置２の各構成部に処理を実行させるためのプログラム（レシピとも言う）が、読み出し可能に格納される。
　記憶部１０４は、コントローラ１００に内蔵された記憶装置（ハードディスクやフラッシュメモリ）であってもよいし、可搬性の外部記録装置（磁気テープ、フレキシブルディスクやハードディスク等の磁気ディスク、ＣＤやＤＶＤ等の光ディスク、ＭＯ等の光磁気ディスク、ＵＳＢメモリやメモリカード等の半導体メモリ）であってもよい。また、コンピュータへのプログラムの提供は、インターネットや専用回線等の通信手段を用いて行ってもよい。プログラムは、必要に応じて、入出力装置１０２からの指示等にて記憶部１０４から読み出され、読み出されたレシピに従った処理をコントローラ１００が実行することで、処理装置２は、コントローラ１００の制御のもと、所望の処理を実行する。
　次に、上述の処理装置２を用い、基板上に膜を形成する処理（成膜処理）について説明する。ここでは、ウエハＷに対して、原料ガスとしてＨＣＤＳ（Ｓｉ２Ｃｌ６ ：ヘキサクロロジシラン）ガスと、反応ガスとしてＮＨ３（アンモニア）ガスとを供給することで、ウエハＷ上にシリコン窒化（ＳｉＮ）膜を形成する例について説明する。なお、以下の説明において、処理装置２を構成する各部の動作はコントローラ１００により制御される。
（ウエハチャージおよびボートロード）
　複数枚のウエハＷがボート２６に装填（ウエハチャージ）されると、ボート２６は、ボートエレベータ３２によって処理室１４内に搬入（ボートロード）され、反応管１０の下部開口は蓋部２２によって気密に閉塞（シール）された状態となる。
（圧力調整および温度調整）
　処理室１４内が所定の圧力（真空度）となるように、真空ポンプ５２によって真空排気（減圧排気）される。処理室１４内の圧力は、圧力センサ４８で測定され、この測定された圧力情報に基づきＡＰＣバルブ５０がフィードバック制御される。また、処理室１４内のウエハＷが所定の温度となるように、ヒータ１２によって加熱される。この際、処理室１４が所定の温度分布となるように、温度検出部１６が検出した温度情報に基づきヒータ１２への通電具合がフィードバック制御される。また、回転機構３０によるボート２６およびウエハＷの回転を開始する。
（成膜処理）
［原料ガス供給工程］
　処理室１４内の温度が予め設定された処理温度に安定すると、処理室１４内のウエハＷに対してＨＣＤＳガスを供給する。ＨＣＤＳガスは、ＭＦＣ３８ａにて所望の流量となるように制御され、ガス供給管３６ａ、ノズル４４ａおよびスリット１０Ｄを介して処理室１４内に供給される。
［原料ガス排気工程］
　次に、ＨＣＤＳガスの供給を停止し、真空ポンプ５２により処理室１４内を真空排気する。この時、不活性ガス供給部から不活性ガスとしてＮ２ガスを処理室１４内に供給しても良い（不活性ガスパージ）。
［反応ガス供給工程］
　次に、処理室１４内のウエハＷに対してＮＨ３ガスを供給する。ＮＨ３ガスは、ＭＦＣ３８ｂにて所望の流量となるように制御され、ガス供給管３６ｂ、ノズル４４ｂおよびスリット１０Ｄを介して処理室１４内に供給される。
［反応ガス排気工程］
　次に、ＮＨ３ガスの供給を停止し、真空ポンプ５２により処理室１４内を真空排気する。この時、不活性ガス供給部からＮ２ガスを処理室１４内に供給しても良い（不活性ガスパージ）。
　上述した４つの工程を行うサイクルを所定回数（１回以上）行うことにより、ウエハＷ上に、所定組成および所定膜厚のＳｉＮ膜を形成することができる。
（ボートアンロードおよびウエハディスチャージ）
　所定膜厚の膜を形成した後、不活性ガス供給部からＮ２ガスが供給され、処理室１４内の雰囲気がＮ２ガスに置換されると共に、処理室１４の圧力が常圧に復帰される。その後、ボートエレベータ３２により蓋部２２が降下されて、ボート２６が反応管１０から搬出（ボートアンロード）される。その後、処理済ウエハＷはボート２６より取出される（ウエハディスチャージ）。
　ウエハＷにＳｉＮ膜を形成する際の処理条件としては、例えば、下記が例示される。
　処理温度（ウエハ温度）：３００℃～７００℃、
　処理圧力（処理室内圧力）：１Ｐａ～４０００Ｐａ、
　ＨＣＤＳガス：１００ｓｃｃｍ～１００００ｓｃｃｍ、
　ＮＨ３ガス：１００ｓｃｃｍ～１００００ｓｃｃｍ、
　Ｎ２ガス：１００ｓｃｃｍ～１００００ｓｃｃｍ、
　それぞれの処理条件を、それぞれの範囲内の値に設定することで、成膜処理を適正に進行させることが可能となる。
　次に、第１の実施形態におけるノズル４４ａの形状について説明する。
　図３に示すように、ノズル４４ａは先端がドーム状に形成されたロングノズルであり、ノズル４４ａの側面（ウエハＷ側）には、ウエハ配列方向に沿ってガス供給口として細長形状のスリット４５ａが形成されている。スリット４５ａの長さは、好ましくは、ウエハＷの配列長よりも長くするのが良い。例えば、ウエハＷの配列長に、ウエハＷ間（ピッチ間）分の長さを上下に加えた長さが好ましい。すなわち、スリット４５ａの上端の位置がボート２６に保持される最上段のウエハＷの高さ位置より高くなるように、また、スリット４５ａの下端の位置がボート２６に保持される最下段のウエハＷの高さ位置より低くなるように形成することが好ましい。このような構成により、ウエハＷの配列方向において、均等な量でガスを供給することができる。
　スリットの幅は、好ましくは、０．５ｍｍ以上３ｍｍ以下（０．５ｍｍ～３ｍｍ）であり、より好ましくは、１～２ｍｍである。言い換えれば、スリットの幅は、好ましくは、ノズル４４ａの内径の０．０２倍以上０．２倍以下（０．０２～０．２倍）であり、より好ましくは、０．０４～０．１３倍である。スリット幅が０．５ｍｍより狭い場合（ノズル４４ａの内径の０．０２倍未満の場合）、ノズル内圧が上昇してしまう。また、スリット幅が３ｍｍより広い場合（ノズル４４ａの内径の０．２倍より大きい場合）、ウエハＷの成膜均一性が悪化してしまう。よって、スリットの幅を０．５ｍｍ～３ｍｍ（ノズル４４ａの内径の０．０２～０．２倍）とすることにより、ノズル内圧の過剰な上昇を抑制でき、成膜均一性を向上させることができる。また、スリットの幅を１～２ｍｍ（ノズル４４ａの内径の０．０４～０．１３倍）とすることにより、より成膜均一性を向上させることができる。
　ノズル４４ａのスリット４５ａは、先端部（ドーム状の天井部）の頂点まで形成されている。このような構成により、ノズル４４ａ内先端部のガス滞留を抑制することができる。また、ノズル４４ａ内の残留ガスを効率的にパージすることができ、生産性を向上させることができる。また、供給バッファ室１０Ａ内の上部に向けてガスを供給することにより、供給バッファ室１０Ａの上部におけるガスの滞留を抑制することができる。さらに、供給バッファ室１０Ａ内において、上下方向でガス拡散を均一化することができる。
　次に、多孔ノズルおよび先端開放ノズルと第１の実施形態におけるノズル（スリットノズル）との比較結果について説明する。ここでは、処理室温度を６５０℃、処理室圧力を５Ｐａとし、ＨＣＤＳガスを各ノズルより流したものとしてシミュレーションを行った。
　まず、図４を用いて、ノズル内圧のシミュレーション結果について説明する。図４に示すように、スリットノズルは多孔ノズルよりもノズル内圧を大幅に下げることができる。また、多孔ノズルは、ガス流量を２倍にすると、ノズル内圧も約２倍となり、さらに、ノズル内圧は高い圧力のままになっている。これに対し、スリットノズルは、ガス流量を２倍にしても、ノズル内圧は低いままである。すなわち、スリットノズルにおいては、ガス流量を増加させても、ノズルの内圧をガスがノズル内で分解する所定の圧力よりも低い圧力に維持することができることが分かる。また、スリットノズルのスリット幅が広いほど、ノズル内圧を低くさせることができる。
　次に、図５および図６を用いて、ウエハ中央部でのガス流速のシミュレーション結果について説明する。図５に示すように、多孔ノズルとスリットノズルとの間で、流速の面間均一性に大きな差はない。すなわち、スリットノズルにおいては、流速の面間均一性を確保しつつ、ノズル内圧を低減させることができる。
　図６に示すように、先端開放ノズルでは、ガス流量を２倍とすると、面間の流速分布が大きく変化する。すなわち、ガス流量を増やすと、下部のウエハの流速はほとんど変化しない一方で、上部のウエハの流速が速くなる。先端開放ノズルでは、ガス流量を増やすことにより、ガスの噴き上げ高さが高くなるため、上部のウエハではガスが大量に流れ込み、ガス流速が速くなる。一方で、下部のウエハではガスの流れ込み量に変化がないため、ガスの流速はほとんど変わらない。これに対し、スリットノズルでは面間の流速分布の形状はほとんど変化せずに、全体的に流速が速くなっている。すなわち、スリットノズルとすることにより、面間の流速分布を確保したままガス流量を変化させることができる。
＜本実施形態による効果＞
　本実施形態によれば、以下に示す１つ又は複数の効果が得られる。
　（１）スリットを天井部の頂上まで形成することにより、ノズル内のガス滞留を抑制することができる。ガスの滞留部があると、その部分でガスの分解が進むことにより、ガスの濃度が面間で不均一になってしまうことがある。また、ガス滞留を抑制することにより、ノズル内に残った原料ガスを不活性ガスによってパージするための時間を短縮することができ、生産性を向上させることができる。
　（２）ガス供給口をスリット形状とすることにより、ガス流量を増加させてもノズル内圧の上昇を抑制することができ、また、ガス流量を増加させることができるため、プロセスウインドウを広げることができ、成膜の品質を向上させることができる。また、ノズル内圧が上昇すると、ノズル内でガスが成膜してしまい、パーティクルの発生源となってしまうことがある。本発明のノズルによれば、ノズル内圧の上昇を抑制できるため、パーティクルの発生を抑制することができる。
　（３）ガスを２段階で整流させることにより、面間の均一性を向上させることができる。ノズルから供給されたガスは、
ノズルスリットで整流されて均一に流れ、さらに供給バッファ室のスリットでもう一段階整流されることにより、上下方向に均一の濃度でウエハに供給することができる。
（変形例）
　本実施形態におけるノズルは、上述の態様に限定されず、以下に示す変形例のような態様に変更することができる。
（変形例１）
　図７（Ａ）に示すように、スリット４５ａは先端部の頂点までではなく、頂点を超えて後ろ側（反対側）まで形成しても良い。このような構成により、ガスが滞留しやすいバッファ室１０Ａの上部の角部へもガスを直接供給できるため、角部におけるガスの滞留を抑制することができ、膜の品質を向上させることができる。
（変形例２）
　図７（Ｂ）に示すように、スリット４５ａの上方（例えば、スリット４５ａ上部の１／３程度）の幅を下方の幅よりも大きく形成しても良い。このような構成により、上部におけるガス流量を増加させることができ、面間均一性を向上させることができる。
（変形例３）
　図７（Ｃ）に示すように、スリット４５ａの上端は開放されていても良い。このとき、スリット４５ａは上端まで形成されていなくても良い。このような構成により、上部におけるガス流量を増加させることができ、面間均一性を向上させることができる。また、ノズル内のガス滞留を抑制することができ、膜の特性を向上させることができる。
（変形例４）
　図７（Ｄ）に示すように、スリットは複数に複数に分割されていても良い。このような構成により、ノズルの強度を向上させることができる。
　次に、第２の実施形態のノズル４４ａについて説明する。ここで、スリット４５ａの形状は第１の実施形態と同様に構成される。
図８に示すように、ノズル４４ａは上方に立ち上がり、折り返し部７０で下方に折り返す逆Ｕ字形状に形成されている。折り返し部７０より下流側の下流部７２には、ガス供給口としてのスリット４５ａが形成されている。このような構成により、折り返し部７０より上流側の上流部７４において、ガスをヒータ１２より加熱させることができる。上流部７４においてガスを効率的に加熱することができるため、所望の分解状態でガスをウエハＷに供給することができる。例えば、ガスの分解状態は上下間でモル分率１０％以下とすることができる。ガスの分解状態が上下間でモル分率１０％よりも大きい場合、面間均一性に悪影響を及ぼしてしまう。
　上流部７４の下方には、ガス供給管と接続する基部７８が形成される。また、基部７８と上流部７４とを接続するように傾斜部７６が形成される。上流部７４、下流部７２および基部７８は互いに平行に形成される。ノズル４４ａは、正面視において、基部７８の中心線Ｃ１が上流部７４の中心線Ｃ２と下流部７２の中心線Ｃ３との間に位置するように構成される。ここでは、例えば基部７８の中心線Ｃ１が上流部７４の内側の外壁に、上流部７４の中心線Ｃ２が基部７８の外側の外壁に位置するように構成されている。基部７８の中心線Ｃ１が上流部７４の中心線Ｃ２と下流部７２の中心線Ｃ３との中間に位置するように構成されていても良い。このような構成により、ノズル４４ａを安定して支持することができ、ノズル４４ａ内のガス流れをスムーズにすることができる。
　正面視において、第２の実施形態におけるノズル４４ａのスリット４５ａの形成位置は、第１の実施形態におけるノズルのスリットの形成位置よりも、水平方向にずれている。すなわち、第１の実施形態においては、第２の実施形態における基部７８の中心線Ｃ１上にスリットが形成されている。これに対し、第２の実施形態においては、スリット４５ａは下流部７２の中心線Ｃ３上に形成されている。下流部７２は、ウエハ領域をカバーできる位置まで下方に延伸して形成されている。例えば、下流部７２の先端部は、ボート２６の下板と同じ高さ位置以下となるように形成されている。また、折り返し部７０は、ボート２６の上板と同じ高さ位置以上となるように形成される。このような構成により、スリット４５ａを、ウエハＷの配列長よりも長く形成することができる。
　図９に示すように、スリット４５ａがウエハＷの中心を向くように、ノズル４４ａは供給バッファ室１０Ａ内で斜めに設置される。つまり、ノズル４４ａは、隣接するノズル４４ｂの中心とウエハＷの中心とを結ぶ線を半径ｒとした仮想円Ｒ上に、上流部７４の中心と下流部７２の中心とが位置するように設置される。好ましくは、平面視において、上流部７４の中心と下流部７２の中心とを結ぶ線Ｌ１と、基部７８の中心とウエハＷの中心を結ぶ線Ｌ２とのなす角（Ｌ１からＬ２へ反時計回りに向かう角）が０度～９０度となるように配置される。線Ｌ１と線Ｌ２とのなす角が０度よりも小さい場合、または、９０度よりも大きい場合、供給バッファ室１０Ａの壁面に対して供給されるガスが多くなってしまい、ガスの流速や流量が抑制されてしまうことがある。よって、ノズル４４ａは、線Ｌ１と線Ｌ２とのなす角が０度～９０度となるように配置されることが好ましい。言い換えれば、上流部７４の方が下流部７２よりもヒータ１２に近く、下流部７２の方が上流部７４よりもウエハＷに近くなるように設置されても良い。より好ましくは、線Ｌ１と線Ｌ２とのなす角が直角となるように配置される。このような構成により、ガスをウエハＷ中央に向けて供給することができる。また、ウエハＷと各ノズルのガス供給孔との距離を同一とすることができる。
　スリット４５ａは、平面視において、線Ｌ１よりもウエハＷ側の領域に形成されることが好ましい。言い換えれば、スリット４５ａは、平面視において、線Ｌ１を基準として、反時計回りに０度～１８０度の範囲（半円上）に形成されることが好ましい。すなわち、正面視において下流部７２の中心線Ｃ３上ではなく、中心線Ｃ３よりも上流部７４側（内側）または外側に片寄って形成されていても良い。このような構成により、上述のように、ノズル４４ａを、線Ｌ１と、線Ｌ２とのなす角が０度～９０度となるように設置した場合においても、ウエハＷ中央に向けてガスを供給することができる。
　次に、第１の実施形態におけるノズル（スリットノズル）と第２の実施形態におけるノズル（Ｕ形スリットノズル）のシミュレーション結果について説明する。ここでは、ＨＣＤＳガスを用いてシミュレーションを行った。
　図１０に示すように、Ｕ形スリットノズルを用いることで、Ｓｉラジカル濃度の面間均一性をさらに向上させることができる。特に、ウエハの中心部分において、上下間のＨＣＤＳガスの分解状態をより揃えることができる。
　また、Ｕ形スリットノズルの先端部において、多少の原料ガスの分解がみられるが、原料ガスの分解箇所がウエハ下部に位置しているため、面間の均一性に対する影響を少なくすることができる。すなわち、図１１に示すように、面間のＳｉラジカル濃度の分圧のばらつきをより平坦とすることができる。
　一般に、多孔ノズル等の通常のノズル、すなわち、折り返し部と下流部を備えない上流部で構成されるノズル（ストレートノズル）内では、ノズル先端に行くほど、ノズル内におけるガスの滞留時間が長くなるため、ガスの分解が促進される。したがって、通常のノズルでは分解された成分は上部で多くなる。これに対し、Ｕ形スリットノズルでは、分解成分ガス濃度を通常のスリットノズルと上下逆転させることができ、分解成分ガス濃度をＵ形スリットノズルの下部で多くすることができる。すなわち、Ｕ形スリットノズルの下流部の下端（ノズルの先端）に近付くほどノズル内でのガス滞留時間が長くなるため、分解状態のガスを多く供給することができる。言い換えれば、Ｕ形スリットノズルはストレートノズルと比較して、ノズル内でのガス滞留時間を長くすることが可能となる。これにより、ウエハＷ中心部において、分解成分ガス濃度を面間で揃えることができ、面間均一性を向上させることができる。
　第２の実施形態におけるノズルは、上述の態様に限定されず、以下に示す変形例のような態様に変更することができる。
（変形例５）
　図１２（Ａ）に示すように、上流部７４にもスリットを形成しても良い。例えば、下流部７２のスリットの幅よりも上流部７４のスリットの幅を狭くしても良い。また例えば、上流部７４にスリットではなく多孔を形成しても良い。このような構成により、所望の分解状態でガスをウエハＷに供給することができる。
　（変形例６）
　図１２（Ｂ）に示すように、スリット４５ａの長さをウエハＷの配列長よりも短い長さで形成しても良い。例えば、スリット４５ａの上端の位置がボート２６に保持される最上段～中段のウエハＷの高さ位置になるように、また、スリット４５ａの下端の位置がボート２６に保持される最下段のウエハＷの高さ位置より低くなるように形成しても良い。言い換えれば、スリット４５ａの長さは、下段～中段に保持されたウエハＷの配列長をカバーする長さであっても良い。このような構成により、上段に保持されたウエハＷへのガスの過剰供給を抑制することができ、面間均一性を向上させることができる。
　以上、本発明の実施形態を具体的に説明した。しかしながら、本発明は上述の実施形態に限定されるものではなく、その要旨を逸脱しない範囲で種々変更可能である。
　例えば、上述の実施形態では、原料ガスとしてＨＣＤＳガスを用いる例について説明したが、本発明は、このような態様に限定されない。例えば、原料ガスの分解がウエハ面間の均一性に影響を与えるガスに本ノズルを用いることが望ましい。また例えば、原料ガスの分解温度とプロセス温度とが近い場合にも好適に用いられる。
　また例えば、原料ガスとしては、ＨＣＤＳガスの他、ＤＣＳ（ＳｉＨ２Ｃｌ２：ジクロロシラン）ガス、ＭＣＳ（ＳｉＨ３Ｃｌ：モノクロロシラン）ガス、ＴＣＳ（ＳｉＨＣｌ３：トリクロロシラン）ガス等の無機系ハロシラン原料ガスや、３ＤＭＡＳ（Ｓｉ［Ｎ（ＣＨ３）２］３Ｈ：トリスジメチルアミノシラン）ガス、ＢＴＢＡＳ（ＳｉＨ２［ＮＨ（Ｃ４Ｈ９）］２：ビスターシャリブチルアミノシラン）ガス等のハロゲン基非含有のアミノ系（アミン系）シラン原料ガスや、ＭＳ（ＳｉＨ４：モノシラン）ガス、ＤＳ（Ｓｉ２Ｈ６：ジシラン）ガス等のハロゲン基非含有の無機系シラン原料ガスを用いることができる。
　また例えば、本発明は、ウエハＷ上に、チタン（Ｔｉ）、ジルコニウム（Ｚｒ）、ハフニウム（Ｈｆ）、タンタル（Ｔａ）、ニオブ（Ｎｂ）、アルミニウム（Ａｌ）、モリブデン（Ｍｏ）、タングステン（Ｗ）等の金属元素を含む膜、すなわち、金属系膜を形成する場合においても、好適に適用可能である。
　また、上述の実施形態や変形例は、適宜組み合わせて用いることができる。
　１４　処理室
　４４ａ　ノズル
　４５ａ　スリット

Claims (14)

  1. 　縦方向に多段に保持された複数枚の基板を処理する処理室と、
    　前記処理室内にガスを供給するノズルと、を備え、
    　前記ノズルは、
    　縦方向に開口したスリットを有し、
    　前記スリットは、前記ノズルの先端部の頂点まで形成されている基板処理装置。
  2. 　前記スリットの上端は、複数枚の前記基板の最上段の基板の位置よりも高い位置に形成され、
    　前記スリットの下端は、複数枚の前記基板の最下段の基板の位置よりも低い位置に形成される請求項１に記載の基板処理装置。
  3. 　前記処理室に隣接して形成されたガス供給室をさらに有し、
    　前記ノズルは前記ガス供給室内に配置される請求項２に記載の基板処理装置。
  4. 　前記ノズルの内圧は、前記ノズル内でガスが分解する圧力よりも低い圧力である請求項３に記載の基板処理装置。
  5. 　前記スリットの幅は、前記ノズルの内径の０．０２倍以上０．２倍以下の範囲である請求項１に記載の基板処理装置。
  6. 　前記ノズルは、
    　折り返し部と、
    　前記折り返し部よりも上流側である上流部と、
    　前記折り返し部よりも下流側である下流部と、を有し、
    　前記スリットは前記下流部に形成される請求項１に記載の基板処理装置。
  7. 　前記ノズルは、
    　前記上流部よりもさらに上流側に位置する基部と、
    　前記基部と前記上流部とを接続する傾斜部と、を有し、
    　前記基部の中心線は、前記上流部の中心線と前記下流部の中心線との間に位置する請求項６に記載の基板処理装置。
  8. 　前記ノズル内でのガス滞留時間を、ストレートノズル内におけるガス滞留時間よりも長くすることにより、前記下流部の下端に近付くほど分解した状態のガスの量を多くする請求項７に記載の基板処理装置。
  9. 　前記スリットの上端は、複数枚の前記基板の最上段の基板の位置よりも低い位置に形成され、
    　前記スリットの下端は、複数枚の前記基板の最下段の基板の位置よりも低い位置に形成される請求項８に記載の基板処理装置。
  10. 　前記処理室に隣接して形成され、前記ノズルが配置されるガス供給室と、
    　前記ガス供給室に設置され、複数のガス供給孔を有する多孔ノズルと、をさらに有し、
    　前記ノズルは、前記基板の中心と前記多孔ノズルの前記ガス供給孔とを結ぶ線を半径とする仮想円上に前記スリットが位置するように前記ガス供給室内に斜めに設置される請求項７に記載の基板処理装置。
  11. 　前記ノズルは、前記基板の中心と前記基部の中心とを結ぶ線と、前記上流部の中心と前記下流部の中心とを結ぶ線とのなす角度が０度～９０度となるように、前記ガス供給室内に設置される請求項１０に記載の基板処理装置。
  12. 　複数枚の基板を処理室内で処理する基板処理装置内に設置され、前記処理室内にガスを供給するノズルであって、
    　前記ノズルは、
    　縦方向に開口したスリットを有し、
    　前記スリットは、前記ノズルの先端部の頂点まで形成されているノズル。
  13. 　前記ノズルは、
    　折り返し部と、
    　前記折り返し部よりも上流側である上流部と、
    　前記折り返し部よりも下流側である下流部と、
    　前記上流部よりもさらに上流側に位置する基部と、
    　前記基部と前記上流部とを接続する傾斜部と、を有し、
    　前記スリットは前記下流部に形成され、
    　前記基部の中心線は、前記上流部の中心線と前記下流部の中心線との間に位置する請求項１２に記載のノズル。
  14. 　複数枚の基板を処理する処理室内に前記基板を搬入する工程と、
    　縦方向に開口したスリットが先端部の頂点まで形成されているノズルから前記処理室内にガスを供給し、前記処理室内で前記基板を処理する工程と、
    　を有する半導体装置の製造方法。
PCT/JP2016/069897 2016-07-05 2016-07-05 基板処理装置、ガスノズルおよび半導体装置の製造方法 WO2018008088A1 (ja)

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