WO2015041376A1 - 基板処理装置、半導体装置の製造方法および反応管 - Google Patents
基板処理装置、半導体装置の製造方法および反応管 Download PDFInfo
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- WO2015041376A1 WO2015041376A1 PCT/JP2014/076023 JP2014076023W WO2015041376A1 WO 2015041376 A1 WO2015041376 A1 WO 2015041376A1 JP 2014076023 W JP2014076023 W JP 2014076023W WO 2015041376 A1 WO2015041376 A1 WO 2015041376A1
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- Prior art keywords
- gas supply
- gas
- area
- cylindrical portion
- reaction tube
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- 238000012545 processing Methods 0.000 title claims abstract description 185
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 78
- 239000000758 substrate Substances 0.000 title claims abstract description 72
- 239000004065 semiconductor Substances 0.000 title description 10
- 238000004519 manufacturing process Methods 0.000 title description 9
- 238000000034 method Methods 0.000 abstract description 30
- 230000008569 process Effects 0.000 abstract description 21
- 239000007789 gas Substances 0.000 description 355
- 235000012431 wafers Nutrition 0.000 description 54
- 239000010408 film Substances 0.000 description 18
- 238000003860 storage Methods 0.000 description 14
- 238000009529 body temperature measurement Methods 0.000 description 10
- 239000011261 inert gas Substances 0.000 description 9
- 230000007246 mechanism Effects 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 7
- 239000003779 heat-resistant material Substances 0.000 description 7
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
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- 238000011144 upstream manufacturing Methods 0.000 description 4
- 229910000990 Ni alloy Inorganic materials 0.000 description 3
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- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 238000005192 partition Methods 0.000 description 3
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- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000006227 byproduct Substances 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 230000004913 activation Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
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- 150000004767 nitrides Chemical class 0.000 description 1
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45546—Atomic layer deposition [ALD] characterized by the apparatus specially adapted for a substrate stack in the ALD reactor
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45578—Elongated nozzles, tubes with holes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
Definitions
- the present invention relates to a substrate processing apparatus, a semiconductor device manufacturing method, and a reaction tube.
- This type of substrate processing apparatus has a boat as a substrate holding member that holds substrates (wafers) in multiple stages in a reaction tube, and processes the substrate in a processing chamber in the reaction tube while holding the plurality of substrates. It is known that there is something to do.
- Patent Document 1 in a state where a plurality of wafers 200 to be batch-processed are held in multiple stages with respect to a boat 217 and inserted into the reaction tube 203, two or more kinds of source gases are simultaneously supplied to the wafers 200 in the reaction tube 203.
- a configuration in which a film is formed on the wafer 200 is disclosed.
- An object of the present invention is to provide a technique capable of improving the film thickness uniformity and improving the productivity.
- a substrate holding member for holding a plurality of substrates;
- a reaction tube containing the substrate holding member and processing the substrate;
- a processing gas supply system for supplying a processing gas into the reaction tube;
- An exhaust system for exhausting the atmosphere in the reaction tube,
- the reaction tube has a closed portion at the upper end and a cylindrical portion having an opening at the lower end,
- a gas supply area formed on the outside of one side wall of the cylindrical portion and connected to the processing gas supply system;
- a gas exhaust area formed on the outside of the other side wall of the cylindrical portion facing the gas supply area and connected to the exhaust system,
- the gas supply area and the gas exhaust area are provided with a semiconductor manufacturing apparatus configured to have an inner wall that divides an internal space into a plurality of spaces.
- the substrate processing apparatus in the present invention is configured as an example of a semiconductor manufacturing apparatus used for manufacturing a semiconductor device.
- the processing furnace 202 has a heater 207 as a heating means (heating mechanism).
- the heater 207 has a cylindrical shape and is vertically installed by being supported by a heater base (not shown) as a holding plate.
- the heater 207 also functions as an activation mechanism (excitation unit) that activates (excites) the processing gas with heat.
- a reaction tube 203 having a single tube structure that constitutes a reaction vessel (processing vessel) concentrically with the heater 207 is disposed.
- the reaction tube 203 is made of a heat resistant material such as quartz (SiO 2 ) or silicon carbide (SiC).
- the reaction tube 203 is formed in a ceiling shape in which the lower end is opened and the upper end is closed with a flat wall.
- the side wall of the reaction tube 203 includes a cylindrical portion 209 formed in a cylindrical shape, and a gas supply area 222 and a gas exhaust area 224 provided on the outer wall of the cylindrical portion 209.
- a processing chamber 201 is formed inside the cylindrical portion 209 of the reaction tube 203.
- the processing chamber 201 is configured to process a wafer 200 as a substrate. Further, the processing chamber 201 is configured to be capable of accommodating a boat 217 that can hold the wafers 200 in a state where the wafers 200 are aligned in a vertical direction in multiple stages in a horizontal posture.
- the gas supply area 222 is formed so that the convex portion protrudes outside the one side wall of the cylindrical portion 209.
- the outer wall of the gas supply area 222 is larger than the outer diameter of the cylindrical portion 209 and concentrically with the cylindrical portion 209 on the outer side of one side wall as a part of the outer wall of the cylindrical portion 209.
- the gas supply area 222 has a ceiling shape in which the lower end is opened and the upper end is closed by a flat wall.
- the gas supply area 222 accommodates nozzles 410a to 410c, which will be described later, along the length direction (vertical direction), and a boundary wall 252 that is a wall body that forms a boundary between the gas supply area 222 and the cylindrical portion 209.
- a gas supply slit 235 which will be described later, is formed.
- the boundary wall 252 is one side wall of the cylindrical portion 209, and an outer side surface of the boundary wall 252 constitutes a side surface portion facing the gas supply area 222.
- a gas exhaust area 224 is formed on the other side wall of the cylindrical portion 209 facing the one side wall where the gas supply area 222 is formed.
- the gas exhaust area 224 is disposed so as to sandwich an area where the wafer 200 of the processing chamber 201 is accommodated between the gas exhaust area 224 and the gas supply area 222.
- the gas exhaust area 224 is formed so that the convex portion protrudes outside the other side wall facing the one side wall where the gas supply area 222 of the cylindrical portion 209 is formed.
- the outer wall of the gas exhaust area 224 is larger than the outer diameter of the cylindrical portion 209 on the outside of the other side wall as a part of the outer wall of the cylindrical portion 209 and is formed concentrically with the cylindrical portion 209.
- the gas exhaust area 224 has a ceiling shape in which the lower end and the upper end are closed by a flat wall.
- a gas exhaust slit 236 to be described later is formed in a boundary wall 254 that is a wall body that forms a boundary between the gas exhaust area 224 and the cylindrical portion 209.
- the boundary wall 254 is a part of the cylindrical portion 209, and an outer side surface thereof constitutes a side surface portion facing the gas exhaust area 224.
- the lower end of the reaction tube 203 is supported by a cylindrical manifold 226.
- the manifold 226 is formed of a metal such as a nickel alloy or stainless steel, or a heat resistant material such as quartz (SiO 2 ) or silicon carbide (SiC).
- a flange is formed at the upper end portion of the manifold 226, and the lower end portion of the reaction tube 203 is installed and supported on the flange.
- An airtight member 220 such as an O-ring is interposed between the flange and the lower end portion of the reaction tube 203 to keep the inside of the reaction tube 203 airtight.
- a seal cap 219 is attached to the opening at the lower end of the manifold 226 through an airtight member 220 such as an O-ring, so that the opening at the lower end of the reaction tube 203, that is, the opening of the manifold 226 is airtight. It is supposed to close.
- the seal cap 219 is formed of, for example, a metal such as nickel alloy or stainless steel, and is formed in a disk shape.
- the seal cap 219 may be configured to cover the outside with a heat resistant material such as quartz (SiO 2 ) or silicon carbide (SiC).
- a boat support 218 that supports the boat 217 is provided on the seal cap 219.
- the boat support 218 is made of a heat-resistant material such as quartz or silicon carbide, and functions as a heat insulating portion and is a support that supports the boat.
- the boat 217 is erected on the boat support 218.
- the boat 217 is made of a heat resistant material such as quartz or silicon carbide.
- the boat 217 has a bottom plate fixed to a boat support (not shown) and a top plate arranged above the bottom plate, and has a configuration in which a plurality of columns are installed between the bottom plate and the top plate. Yes. A plurality of wafers 200 are held on the boat 217.
- the plurality of wafers 200 are loaded in multiple stages in the tube axis direction of the reaction tube 203 in a state where the wafers 200 are kept in a horizontal posture while being spaced apart from each other at the center, and are supported on the support column of the boat 217.
- a boat rotation mechanism 267 for rotating the boat is provided on the side of the seal cap 219 opposite to the processing chamber 201.
- a rotation shaft 265 of the boat rotation mechanism 267 passes through the seal cap and is connected to the boat support base 218.
- the boat rotation mechanism 267 rotates the boat 217 via the boat support base 218 to rotate the wafer 200. .
- the seal cap 219 is moved up and down in the vertical direction by a boat elevator 115 as an elevating mechanism provided outside the reaction tube 203, so that the boat 217 can be carried into and out of the processing chamber 201.
- nozzle support portions 350a to 350c that support the nozzles 340a to 340c are installed so as to be bent in an L shape and penetrate the manifold 226.
- three nozzle support portions 350a to 350c are installed.
- the nozzle support portions 350a to 350c are made of a material such as nickel alloy or stainless steel.
- Gas supply pipes 310a to 310c for supplying gas into the reaction tube 203 are connected to one end of the nozzle support portion 350 on the reaction tube 203 side.
- nozzles 340a to 340c are connected to the other ends of the nozzle support portions 350a to 350c, respectively.
- the nozzles 340a to 340c are formed of a heat resistant material such as quartz or SiC.
- the nozzles 340a to 340c are provided above the lower part in the gas supply area 222 along the length direction (vertical direction).
- the nozzles 340a to 340c are each configured as an I-shaped long nozzle.
- Gas supply holes 232a to 232c for supplying gas are provided on the side surfaces of the nozzles 340a to 340c, respectively.
- the gas supply holes 232a to 232c are opened so as to face the center of the reaction tube 203, respectively.
- the gas supply area 222 is provided with the three nozzles 340 a to 340 c so that a plurality of types of gases can be supplied into the processing chamber 201.
- the boat 217 is inserted into the processing chamber 201 while being supported by the boat support 218, and the heater 207 is The wafer 200 inserted into the processing chamber 201 is heated to a predetermined temperature.
- the gas supply pipe 310a includes, in order from the upstream direction, a first processing gas supply source 360a that supplies a first processing gas, a mass flow controller (MFC) 241a that is a flow rate controller (flow rate control unit), and a valve 243a that is an on-off valve.
- the gas supply pipe 310b includes, in order from the upstream direction, a first processing gas supply source 360b that supplies a second processing gas, a mass flow controller (MFC) 241b that is a flow rate controller (flow rate control unit), and a valve 243b that is an on-off valve.
- MFC mass flow controller
- the gas supply pipe 310c includes, in order from the upstream direction, a first processing gas supply source 360c that supplies a third processing gas, a mass flow controller (MFC) 241c that is a flow rate controller (flow rate control unit), and a valve 243c that is an on-off valve.
- MFC mass flow controller
- Gas supply pipes 310d to 310f for supplying an inert gas are connected to the gas supply pipes 310a to 310c on the downstream side of the valve valves 243a to 243c, respectively.
- the gas supply pipes 310d to 310f are provided with MFCs 241d to 241f as flow rate controllers (flow rate control units) and valves 243d to 243f as opening / closing valves, respectively, in order from the upstream direction.
- the first process gas supply system is mainly configured by the gas supply pipe 310a, the MFC 320a, and the valve 330a.
- the first process gas supply source 360a, the nozzle support part 350a, and the nozzle 340a may be included in the first process gas supply system.
- a second processing gas supply system is mainly configured by the gas supply pipe 310b, the MFC 320b, and the valve 330b.
- the second process gas supply source 360b, the nozzle support part 350b, and the nozzle 340b may be included in the second process gas supply system.
- a third processing gas supply system is mainly configured by the gas supply pipe 310c, the MFC 320c, and the valve 330c.
- the third processing gas supply source 360c, the nozzle support 350c, and the nozzle 340c may be included in the third processing gas supply system.
- processing gas when the term “processing gas” is used, it includes only the first processing gas, includes only the second processing gas, includes only the third processing gas, or includes all of them. There is.
- processing gas supply system when the term processing gas supply system is used, it includes only the first processing gas supply system, only the second processing gas supply system, only the third processing gas supply system, or all of them. May be included.
- An exhaust port 230 is provided below the gas exhaust area 224.
- the exhaust port 230 is connected to the exhaust pipe 231.
- the exhaust pipe 232 is evacuated through a pressure sensor 245 as a pressure detector (pressure detection unit) for detecting the pressure in the processing chamber 201 and an APC (Auto Pressure Controller) valve 244 as a pressure regulator (pressure adjustment unit).
- a vacuum pump 246 serving as an exhaust device is connected, and the processing chamber 201 can be evacuated so that the pressure in the processing chamber 201 becomes a predetermined pressure (degree of vacuum).
- An exhaust pipe 232 on the downstream side of the vacuum pump 246 is connected to a waste gas treatment device (not shown) or the like.
- the APC valve 244 can open and close the valve to stop evacuation / evacuation in the processing chamber 201, and further adjust the valve opening to adjust conductance to adjust the pressure in the processing chamber 201. It is an open / close valve.
- An exhaust system is mainly configured by the exhaust pipe 232, the APC valve 244, and the pressure sensor 245.
- a vacuum pump 246 may also be included in the exhaust system.
- a temperature sensor 238 to be described later is installed in the reaction tube 203 as a temperature detector. By adjusting the power supplied to the heater 207 based on the temperature information detected by the temperature sensor 238, The temperature is configured to have a desired temperature distribution.
- the controller 280 which is a control unit (control means), is configured as a computer including a CPU (Central Processing Unit) 121a, a RAM (Random Access Memory) 121b, a storage device 121c, and an I / O port 121d.
- the RAM 121b, the storage device 121c, and the I / O port 121d are configured to exchange data with the CPU 121a via the internal bus 121e.
- an input / output device 122 configured as a touch panel or the like is connected to the controller 280.
- the storage device 121c includes, for example, a flash memory, a HDD (Hard Disk Drive), and the like.
- a control program that controls the operation of the substrate processing apparatus, a process recipe that describes the procedure and conditions of the substrate processing described later, and the like are stored in a readable manner.
- the process recipe is a combination of functions so that a predetermined result can be obtained by causing the controller 280 to execute each procedure in the substrate processing process described later, and functions as a program.
- the process recipe, the control program, and the like are collectively referred to simply as a program.
- program When the term “program” is used in this specification, it may include only a process recipe alone, only a control program alone, or both.
- the RAM 121b is configured as a memory area (work area) in which programs, data, and the like read by the CPU 121a are temporarily stored.
- the I / O port 121d is connected to the above-described MFCs 241a to 241f, valves 243a to 243f, pressure sensor 245, APC valve 244, vacuum pump 246, heater 207, temperature sensor 238, boat rotation mechanism 267, boat elevator 115, and the like. Yes.
- the CPU 121a is configured to read and execute a control program from the storage device 121c, and to read a process recipe from the storage device 121c in response to an operation command input from the input / output device 122 or the like.
- the CPU 121a adjusts the flow rates of various gases by the MFCs 241a to 241f, the opening and closing operations of the valves 243a to 243f, the opening and closing operations of the APC valve 244, and the pressure by the APC valve 244 based on the pressure sensor 245 so as to match the contents of the read process recipe.
- Control of adjustment operation, start and stop of vacuum pump 246, temperature adjustment operation of heater 207 based on temperature sensor 238, rotation and rotation speed adjustment operation of boat 217 by boat rotation mechanism 267, raising / lowering operation of boat 217 by boat elevator 115, etc. Is configured to do.
- the controller 280 is not limited to being configured as a dedicated computer, and may be configured as a general-purpose computer.
- an external storage device storing the above-described program for example, magnetic tape, magnetic disk such as a flexible disk or hard disk, optical disk such as CD or DVD, magneto-optical disk such as MO, semiconductor memory such as USB memory or memory card
- the controller 280 of this embodiment can be configured by installing a program on a general-purpose computer using the external storage device 123.
- the means for supplying the program to the computer is not limited to supplying the program via the external storage device 123.
- the program may be supplied without using the external storage device 123 by using communication means such as the Internet or a dedicated line.
- the storage device 121c and the external storage device 123 are configured as computer-readable recording media. Hereinafter, these are collectively referred to simply as a recording medium.
- recording medium When the term “recording medium” is used in this specification, it may include only the storage device 121c alone, may include only the external storage device 123 alone, or may include both.
- inner walls 248 and 250 that divide each internal space into a plurality of spaces are formed inside the gas supply area 222 and the gas exhaust area 224.
- the inner walls 248 and 250 are made of the same material as the reaction tube 203, and are made of a heat resistant material such as quartz (SiO 2 ) or silicon carbide (SiC).
- quartz SiO 2
- SiC silicon carbide
- the two inner walls 248 that divide the gas supply area 222 are provided so as to divide the gas supply area 222 from the lower end side to the upper end side to form three isolated spaces.
- nozzles 340a to 340c are respectively installed in each space of the gas supply area 222. Since the nozzles 340a to 340c are installed in independent spaces by the inner wall 248, it is possible to prevent the processing gases supplied from the nozzles 340a to 340c from being mixed in the gas supply area 222. With such a configuration, it is possible to prevent the processing gas from being mixed in the gas supply area 222 to form a thin film or to generate a by-product.
- the inner wall 248 may be provided so as to partition the gas supply area 222 from the lower end to the upper end and form three isolated spaces.
- the two inner walls 250 that divide the inside of the gas exhaust area 224 are provided so as to partition the gas exhaust area 224 from the lower end side to the upper end side to form three isolated spaces.
- the inner wall 250 is provided so as to partition the gas exhaust area 224 from the lower end side to the upper end and form three isolated spaces.
- the gas flow path cross-sectional areas of the gas supply area 222 and the gas exhaust area 224 are the same.
- the cross-sectional area of the gas in each space in the gas supply area 222 and the cross-sectional area of the gas in each space in the gas exhaust area 224 facing each space in the gas supply area 222 are Same area.
- an opening 256 for installing the nozzles 340a to 340c in the gas supply area 222 is formed at the lower end of the boundary wall 252 on the gas supply area 222 side of the cylindrical portion 209.
- the nozzles 340a to 340c are inserted into the spaces from the openings 256, and the lower ends of the nozzles 340a to 340c are once lifted higher than the upper ends of the nozzle support portions 350a to 350c, and then the nozzles 340a to 340c are installed.
- the lower end of 340c is inserted so as to be lower than the upper ends of the nozzle support portions 350a to 350c.
- a buffer region 258 is formed above the upper end of ⁇ 340c (see FIG. 5).
- the upper end side of the gas supply area 222 is configured to be higher than the ceiling of the gas exhaust area 224 by at least the buffer area 258.
- the upper end of the ceiling portion of the gas supply area 222 is the same height as the upper end of the ceiling portion of the cylindrical portion 209, and the upper end of the ceiling portion of the gas exhaust area 224 is higher than the upper end of the ceiling portion of the cylindrical portion 209. It is configured to be low. In other words, the volume of the gas supply area 222 is larger than the volume of the gas exhaust area 224 by the buffer area 258. In this embodiment, the height of the upper end of the gas exhaust area 224 is configured to be lower than the upper end of the gas supply area 222.
- the gas exhaust area 224 affects the exhaust balance due to the size of the volume, If there is no problem in the influence on the adhesion, the same height may be used.
- the inner wall 250 in the gas exhaust area 224 is formed from the upper end of the ceiling of the gas exhaust area 224 to a position higher than the upper end of the exhaust port 230 on the lower end side. From the position higher than the upper end of the exhaust port 230 on the lower end side of the gas exhaust area 224 to the lower end of the gas exhaust area 224 is configured as one space. The gas flowing through each space partitioned by the inner wall 250 of the gas exhaust area 224 joins in one space before the exhaust port 230 and is exhausted from the exhaust port 230. With this configuration,
- the inner wall 248 in the gas supply area 222 is formed from the ceiling of the gas supply area 222 to the upper part of the lower end of the reaction tube 203. Specifically, the lower end of the inner wall 248 is formed below the upper end of the opening 256. The lower end of the inner wall 248 is formed as a region above the lower end portion of the reaction tube 203 and below the upper end portion of the nozzle support portion 350.
- the length of the inner wall 248 in the gas supply area 222 is configured to be shorter than the length of the reaction tube 203 and longer than the length of the boundary wall 252. Further, the inner wall 248 in the gas supply area 222 is configured to be longer than the inner wall 250 in the gas exhaust area 224.
- a gas supply slit 235 for supplying a processing gas into the processing chamber 201 is formed on the boundary wall 252 between the cylindrical portion 209 and the gas supply area 222.
- the gas supply slits 235 are formed in a matrix with a plurality of rows and columns in the vertical and horizontal directions. That is, a plurality of horizontally long slits are formed in the vertical direction facing each space defined by the inner wall 248 in the gas supply area 222.
- the gas supply efficiency can be improved.
- the gas supply slit 235 may be formed in a horizontally long shape except for a connecting portion between the inner wall 248 and the boundary wall 252 so as to improve gas supply efficiency.
- the number of rows of gas supply slits 235 is the same as the number of partitioned spaces. In this embodiment, since three spaces are formed, the gas supply slits 235 are formed in three rows.
- a gas exhaust slit 236 for exhausting the atmosphere in the processing chamber 201 is formed in a boundary wall 254 between the cylindrical portion 209 and the gas exhaust area 224.
- the gas exhaust slits 236 are formed in a matrix of a plurality of rows and columns in the vertical and horizontal directions. That is, a plurality of horizontally long slits are formed in the vertical direction so as to face each space defined by the inner wall 248 in the gas supply area 222 and to be long in the circumferential direction of the cylindrical portion.
- the length of the gas exhaust slit 236 in the circumferential direction of the cylindrical portion 209 is the same as the length of each space in the gas exhaust area 224 in the circumferential direction, the gas exhaust efficiency can be improved.
- the gas exhaust slit 236 is formed in a horizontally long and a plurality of vertical stages excluding the connecting portion between the inner wall 250 and the boundary wall 254, so that the gas exhaust efficiency is improved.
- the number of rows of gas exhaust slits 236 is the same as the number of partitioned spaces. In the present embodiment, since three spaces are formed, the gas exhaust slits 236 are formed in three rows.
- the gas supply slit 235 and the gas exhaust slit 236 are smoothly formed so that the edge portions as the four corners draw curved surfaces.
- R scribing or the like By performing R scribing or the like on the edge part to make it curved, it is possible to suppress stagnation of gas around the edge part, to suppress film formation on the edge part, and to be formed on the edge part. The film peeling of the film can be suppressed.
- the gas supply slit 235 and the gas exhaust slit 236 are respectively arranged between adjacent wafers 200 mounted on the boat 217 in a state of being accommodated in the processing chamber 201. It is formed to be.
- the boat 217 will be omitted.
- the wafers 200 it is preferable to form the wafers 200 so as to face each other between the wafers 200 and the top plate.
- the gas supply slits 235 and the gas exhaust slits 236 are formed to have the same height and the same number.
- the gas supply slit 235 and the gas exhaust slit 234 may be formed in 25 stages.
- the gas supply slit 235 and the gas exhaust slit 236 are formed with a constant vertical width L1.
- the gas supply slit 235 and the gas exhaust slit 234 are preferably formed so that L1 is smaller than L2.
- L1 is in the range of about 1 mm to 9 mm, and more preferably in the range of about 3 to 7 mm.
- L2 is preferably in the range of about 6 to 14 mm, and more preferably in the range of about 8 to 12 mm.
- the gas supply holes 234a to 234c of the nozzles 340a to 340c are preferably formed in the central part of the vertical width of each gas supply slit 235 so as to correspond to each gas supply slit 235 one by one.
- 25 gas supply holes 234a to 234c are preferably formed. That is, the gas supply slit 235 and the gas supply holes 234a to 234c are preferably formed in the same number as the wafer 200 to be placed. With such a slit configuration, a flow of processing gas parallel to the wafer 200 can be formed on the wafer 200 (see the arrow in FIG. 5).
- the gas exhaust area 224 is formed with a long slit in the circumferential direction, exhaust can be performed without disturbing the flow of the processing gas flowing on the wafer 200.
- the gas exhaust slit is formed in a hole shape, the flow of the processing gas concentrates toward the hole, so that a uniform gas flow cannot be formed on the wafer 200.
- the gas exhaust slit is formed in a horizontally long shape, the flow of gas is rectified on the wafer 200 uniformly without forming a concentrated process gas flow as it approaches the exhaust side. It becomes possible to supply the processing gas.
- the substrate processing apparatus is controlled by the controller 280.
- a boat 217 on which a predetermined number of wafers 200 are placed is inserted into the reaction tube 203, and the reaction tube 203 is hermetically closed by a seal cap 219.
- the wafer 200 is heated and a processing gas is supplied into the reaction tube 203, so that the wafer 200 is subjected to heat treatment such as heating.
- NH 3 gas as the first processing gas, HCDS gas as the second processing gas, and N 2 gas as the third processing gas are alternately supplied (HCDS gas supply ⁇ N 2 purge ⁇ NH 3 gas supply ⁇
- HCDS gas supply ⁇ N 2 purge ⁇ NH 3 gas supply ⁇ By repeating this cycle a predetermined number of times with N 2 purge as one cycle, a SiN film is formed on the wafer 200.
- the processing conditions are, for example, as follows. Wafer 200 temperature: 100-600 ° C. Processing chamber pressure: 1 to 3000 Pa HCDS gas supply flow rate: 1 to 2000 sccm NH 3 gas supply flow rate: 100 to 10000 sccm N 2 gas supply flow rate: 10 to 10000 sccm SiN film thickness: 0.2 to 10 nm
- HCDS gas is supplied into the processing chamber 201 from the gas supply pipe 310b of the second processing gas supply system through the gas supply hole 234b of the nozzle 350b and the gas supply slit 235.
- the supply of the HCDS gas into the processing chamber 201 from the gas supply pipe 310b is started together with the carrier gas by opening the valves 330b and 330e.
- the opening degree of the APC valve 244 is adjusted to maintain the pressure in the processing chamber 201 at a predetermined pressure.
- the valve 330b is closed and the supply of HCDS gas is stopped.
- the HCDS gas supplied into the processing chamber 201 is supplied to the wafer 200, flows in parallel on the wafer 200, and then flows through the gas exhaust slit 236 from the upper part to the lower part through the gas exhaust area 236.
- the exhaust pipe 232 is exhausted through the exhaust port 230 at the bottom of 222.
- the APC valve 244 is opened to exhaust the processing chamber 201, and the HCDS gas and reaction products remaining in the processing chamber 201 are exhausted. Etc. are excluded. At this time, if an inert gas such as N 2 is supplied into the processing chamber 201 from the inert gas supply pipes 310a and 310c and purged, the effect of eliminating the residual gas from the processing chamber 201 can be further enhanced. . After a predetermined time has elapsed, the valve 330e is closed.
- NH 3 gas is supplied from the gas supply pipe 310a of the first processing gas supply system into the processing chamber 201 through the gas supply hole 234a of the nozzle 350a and the gas supply slit 235.
- the valves 330a and 330d the supply of the NH 3 gas into the processing chamber 201 from the gas supply pipe 310a is started together with the carrier gas.
- the opening degree of the APC valve 244 is adjusted to maintain the pressure in the processing chamber 201 at a predetermined pressure.
- the valve 330a is closed and the supply of NH 3 gas is stopped.
- the NH 3 gas supplied into the processing chamber 201 is supplied to the wafer 200, flows in parallel on the wafer 200, and then flows through the gas exhaust slit 236 from the upper part to the lower part through the gas exhaust area 236.
- the air is exhausted from the exhaust pipe 232 through the exhaust port 230 below the area 222.
- the APC valve 244 is opened to exhaust the processing chamber 201, and the HCDS gas remaining in the processing chamber 201 and the reaction generation Exclude things.
- an inert gas such as N 2 is supplied into the processing chamber 201 from the inert gas supply pipes 310e and 310f and purged, the effect of removing residual gas from the processing chamber 201 can be further enhanced. .
- the valve 330e is closed.
- the boat 217 is unloaded from the reaction tube 203 by the reverse procedure of the above-described operation.
- the wafers 200 are transferred from the boat 217 to the cassette 100 of the transfer shelf 123 by the wafer transfer device 112, and the cassette 100 is transferred from the transfer shelf 123 to the cassette stage 105 by the cassette transfer device 115. It is carried out of the housing 101 by an external transport device that does not.
- the processing gas is supplied in a conical shape from the gas supply hole up, down, left and right. Since the processing gas is widely supplied not only in the direction parallel to the wafer 200 (left-right direction) but also in the up-down direction, the processing gas flows into the space between the edge of the wafer 200 and the reaction tube. A sufficient amount of processing gas cannot be supplied in the meantime. For this reason, the film in the vicinity of the gas supply hole becomes thick and a uniform film thickness cannot be obtained. Further, the replacement efficiency of the processing gas is poor, and the productivity is deteriorated.
- a horizontally long gas supply slit 235 is formed on the downstream side of the gas supply hole. Since the processing gas supplied in the vertical direction hits the boundary wall 254, it is not supplied as it is into the processing chamber 201. The processing gas that hits the boundary wall 254 diffuses in the gas supply area 222, spreads horizontally (in the left-right direction) along the shape of the gas supply slit 235, and is supplied into the processing chamber 201.
- the vertical width of the gas supply slit 235 is shorter than the interval between the wafers 200, even if the processing gas that has passed through the gas supply slit 235 spreads in the vertical direction, the edge of the wafer 200 and the reaction tube The processing gas does not flow into the space between the two, a sufficient amount can be supplied between the wafers 200, and the uneven thickness can be reduced.
- the gas supply area 222 and the gas exhaust area 224 are formed outside the cylindrical portion 209 (processing chamber 201).
- the volume of the reaction tube 203 can be made smaller than that of the conventional reaction tube. If the interval between the cylindrical portion 209 and the edge of the wafer 200 is S1 (see FIG. 5), that is, the volume can be reduced by about 30% compared to the conventional reaction tube, so that productivity is improved. Is possible.
- the gas supply area 222 and the gas exhaust area 224 are divided into three spaces, but may be divided into two spaces or may be divided into four or more spaces.
- the number of spaces to be partitioned can be changed as appropriate in accordance with the number of nozzles necessary for the desired heat treatment.
- each nozzle shape may be changed.
- a gas supply hole of a nozzle installed in the middle space may be opened toward the inner wall.
- a second embodiment of the present invention will be described.
- This embodiment is different from the first embodiment in that a temperature measurement area 260 is formed at both ends of the gas exhaust area 224 in order to install the temperature sensor 238 in the gas exhaust area.
- the shape of the reaction tube 203 suitably used in the second embodiment will be described with reference to FIG. Note that description of the same configuration as in the first embodiment is omitted.
- a temperature measurement area 260 in which the temperature sensor 238 is accommodated is formed at both ends of the gas exhaust area 224.
- the temperature measurement area 260 has a ceiling shape in which a lower end portion and an upper end portion are closed flat, and an outer wall thereof is formed concentrically with the cylindrical portion 209. Further, the temperature measurement area 260 is continuously formed through the gas exhaust area 224 and the inner wall 252.
- the gas exhaust slit 236 is not formed in the boundary wall between the temperature measurement area 260 and the cylindrical portion 209. That is, the temperature measurement area 260 is formed spatially independent from the gas exhaust area 224 and the processing chamber 201. With such a configuration, it is possible to prevent the temperature sensor 238 from being exposed to the processing gas, so that deterioration of the temperature sensor 238 can be suppressed.
- the height of the ceiling portion of the temperature measurement area 260 is It is formed at the same height as the cylindrical portion 209.
- the ceiling portion of the gas exhaust area 224 is formed at the same height as the height of the cylindrical portion 209. That is, in the present embodiment, the gas supply area 222, the gas exhaust area 224, the temperature measurement area 260, and the cylindrical portion 209 are formed so that the height of the ceiling is the same height. With such a configuration, it is possible to measure the temperature inside the processing chamber 201 in the vertical direction, and uniform heating of the processing chamber 201 by the heater 207 can be performed. In addition, the strength of the reaction tube 203 can be increased. Further, by forming the temperature measurement areas 260 at both ends of the gas exhaust area 224, it is possible to improve maintainability.
- Examples of the film forming process performed by the substrate processing apparatus include CVD, PVD, ALD, Epi, other processes for forming an oxide film and a nitride film, and processes for forming a film containing a metal. Further, annealing treatment, oxidation treatment, diffusion treatment or the like may be performed.
- a substrate holding member for holding a plurality of substrates; A reaction tube containing the substrate holding member and processing the substrate; A processing gas supply system for supplying a processing gas into the reaction tube; An exhaust system for exhausting the atmosphere in the reaction tube,
- the reaction tube has a closed portion at the upper end and a cylindrical portion having an opening at the lower end, A gas supply area formed on the outside of one side wall of the cylindrical portion and connected to the processing gas supply system; A gas exhaust area formed on the outside of the other side wall of the cylindrical portion facing the gas supply area and connected to the exhaust system,
- the gas supply area and the gas exhaust area may be provided with a substrate processing apparatus configured to have an inner wall that divides an internal space into a plurality of spaces.
- Appendix 2 The substrate processing apparatus according to appendix 1, preferably, A gas supply slit for supplying the processing gas into the cylindrical portion is formed in a boundary wall between the gas supply area and the cylindrical portion.
- Appendix 3 The substrate processing apparatus according to appendix 1 or 2, preferably, A gas exhaust slit for exhausting the atmosphere in the cylindrical portion is formed in a boundary wall between the gas exhaust area and the cylindrical portion.
- Appendix 4 The substrate processing apparatus according to appendix 3, preferably, The gas supply slit and the gas exhaust slit are formed in a plurality in the vertical direction at positions opposed to the plurality of spaces.
- Appendix 5 The substrate processing apparatus according to appendix 3 or 4, wherein the gas supply slit and the gas exhaust slit are preferably formed long in the circumferential direction of the cylindrical portion, and both end portions thereof are formed in a curved shape. .
- the substrate processing apparatus according to appendices 1 to 6, preferably, The gas supply area and the gas exhaust area have the same number of inner walls and are divided into the same number of spaces.
- the substrate processing apparatus according to appendix 9 preferably, The length of the inner wall of the gas supply area is longer than the length of the inner wall of the gas exhaust area.
- Appendix 14 The substrate processing apparatus according to appendices 4 to 13, preferably, The number of stages of the gas supply slit and the gas exhaust slit is the same as the number of the substrates.
- Appendix 17 The substrate processing apparatus according to appendix 1, preferably, A temperature measurement area in which a temperature sensor for measuring the temperature in the reaction tube is installed is formed adjacent to the gas exhaust area.
- a cylindrical portion having a closed portion at the upper end and an opening at the lower end, a gas supply area formed outside one side wall of the cylindrical portion, and the outside of the other side wall of the cylindrical portion facing the gas supply area
- a method of manufacturing a semiconductor device and a substrate processing method comprising: exhausting an atmosphere in the cylindrical portion from a gas exhaust area having an inner wall that divides the internal space into a plurality of spaces.
- a cylindrical portion having a closed portion at the upper end and an opening at the lower end, a gas supply area formed outside one side wall of the cylindrical portion, and the outside of the other side wall of the cylindrical portion facing the gas supply area
- a procedure for supplying a processing gas into the cylindrical portion from a gas supply area having an inner wall that divides the internal space into a plurality of spaces A procedure for exhausting the atmosphere in the cylindrical portion from a gas exhaust area having an inner wall that divides the internal space into a plurality of spaces;
- a computer-readable recording medium on which the program is recorded is provided.
- a cylindrical portion having a closed portion at the upper end and an opening at the lower end; A gas supply area formed outside one side wall of the cylindrical portion; A gas exhaust area formed on the outside of the other side wall of the cylindrical portion facing the gas supply area, and the gas supply area and the gas exhaust area are inner walls that divide the internal space into a plurality of spaces.
- a reaction tube configured to comprise is provided.
- the substrate processing apparatus the method for manufacturing a semiconductor device, and the reaction tube according to the present invention, it is possible to reduce the volume of the reaction tube and improve the replacement efficiency of the processing gas.
- controller control unit 200 Wafer 201 Processing chamber 202 Processing furnace 203 Reaction tube 207 Heater 222 Gas supply area 224 Gas exhaust area 231 Exhaust tubes 310a to 310f Gas supply tubes
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Abstract
Description
複数枚の基板を保持する基板保持部材と、
前記基板保持部材を収容し、前記基板を処理する反応管と、
前記反応管内に処理ガスを供給する処理ガス供給系と、
前記反応管内の雰囲気を排気する排気系と、を有し、
前記反応管は、上端に閉塞部を有し、下端に開口部を有する円筒部と、
前記円筒部の一側壁の外側に形成され、前記処理ガス供給系が接続されたガス供給エリアと、
前記ガス供給エリアと対向する前記円筒部の他側壁の外側に形成され、前記排気系が接続されたガス排気エリアと、を備え、
前記ガス供給エリアおよび前記ガス排気エリアは、その内部の空間を複数の空間に区画する内壁を備えるよう構成された半導体製造装置が提供される。
ガス排気エリア224と円筒部209との間の境界を構成する壁体である境界壁254には後述するガス排気スリット236が形成されている。境界壁254は円筒部209の一部であって、その外側面は、ガス排気エリア224に面する側面部分を構成する。
内壁248、250は、反応管203と同一材料で形成され、例えば、石英(SiO2)または炭化シリコン(SiC)等の耐熱性材料から形成されている。
ここでは、それぞれ2つの内壁を備え、3つの空間に区画されている。
このような構成により、ガス供給エリア222内で処理ガスが混ざり合って薄膜が形成されたり、副生成物が生成されたりすることを抑制することができる。
好適には、内壁248は、ガス供給エリア222を下端から上端に至るまで区画し、それぞれ隔離した3つの空間を形成するように、設けると良い。
好適には、内壁250は、ガス排気エリア224を下端側から上端に至るまで区画し、それぞれ隔離した3つの空間を形成するように、設けると良い。
好適には、ガス供給エリア222およびガス排気エリア224の外壁の外径は、同一寸法とすると、ヒータ207との間のデッドスペースを少なくすることができる等のメリットがある。
また、好適には、ガス供給エリア222とガス排気エリア224それぞれのガスの流路断面積は同じ面積とする。また、好適には、ガス供給エリア222内の各空間のガスの流路断面積と、ガス供給エリア222内の各空間に対面するガス排気エリア224内の各空間のガスの流路断面積を同じ面積とする。
言い換えれば、バッファ領域258の分だけガス供給エリア222の容積はガス排気エリア224の容積よりも大きくなっているように構成されている。なお、本実施形態ではガス排気エリア224の上端の高さをガス供給エリア222の上端よりも低く構成しているが、ガス排気エリア224が容積のサイズによる排気バランスへの影響や副生成物の付着具合への影響等が問題ない場合には、同じ高さに構成しても良い。
ガス排気エリア224の内壁250で区画された各空間を流通したガスは、排気口230の手前の1つの空間にて合流し、排気口230から排気されるようになっている。このような構成とすることにより、
好適には、ガス排気スリット236の円筒部209周方向の長さはガス排気エリア224内の各空間の周方向の長さと同じにするとガス排気効率が向上するので良い。また、好適には、ガス排気スリット236は、内壁250と境界壁254との連結部分を除いて横長に、縦複数段に形成するとガス排気効率が向上するので良い。また、好適には、ガス排気スリット236の列数は区画された空間と同じ数に形成されると良い。本実施形態では、3つの空間が形成されているため、ガス排気スリット236は3列形成されている。
好適には、ボート217に載置可能な最下段のウエハ200とその上側に隣り合うウエハ200との間から、最上段のウエハ200とその上側に隣り合うボート217の天板との間に至るまで、各ウエハ200間、ウエハ200と天板間に対し1段ずつ対向するように形成されると良い。
好適には、各ガス供給スリット235と各ガス排気スリット236とは同じ高さ、同じ数に形成されると良い。例えば、ウエハ200が25枚載置されるときは、ガス供給スリット235とガス排気スリット234は25段形成されると良い。
好適には、L1は1mm~9mm程度の範囲内とすると良く、さらに好適には3~7mm程度の範囲内とすると良い。また、L2は6~14mm程度の範囲内とすると良く、さらに好適には8~12mm程度の範囲内とすると良い。
ウエハ200の温度:100~600℃
処理室内圧力:1~3000Pa
HCDSガス供給流量:1~2000sccm
NH3ガス供給流量:100~10000sccm
N2ガス供給流量:10~10000sccm
SiN膜の膜厚:0.2~10nm
本実施形態によれば、以下に示す1つ又は複数の効果が得られる。
基板間に十分な量の処理ガスを供給でき、処理ガスの置換効率を向上させることが可能となる。
以下、本発明の好ましい態様について付記する。
複数枚の基板を保持する基板保持部材と、
前記基板保持部材を収容し、前記基板を処理する反応管と、
前記反応管内に処理ガスを供給する処理ガス供給系と、
前記反応管内の雰囲気を排気する排気系と、を有し、
前記反応管は、上端に閉塞部を有し、下端に開口部を有する円筒部と、
前記円筒部の一側壁の外側に形成され、前記処理ガス供給系が接続されたガス供給エリアと、
前記ガス供給エリアと対向する前記円筒部の他側壁の外側に形成され、前記排気系が接続されたガス排気エリアと、を備え、
前記ガス供給エリアおよび前記ガス排気エリアは、その内部の空間を複数の空間に区画する内壁を備えるよう構成された基板処理装置が提供される。
付記1に記載の基板処理装置であって、好ましくは、
前記ガス供給エリアと前記円筒部との境界壁に前記処理ガスを前記円筒部内に供給するガス供給スリットが形成される。
付記1または2に記載の基板処理装置であって、好ましくは、
前記ガス排気エリアと前記円筒部との境界壁に前記円筒部内の雰囲気を排気するガス排気スリットが形成される。
付記3に記載の基板処理装置であって、好ましくは、
前記ガス供給スリットおよび前記ガス排気スリットは、前記複数の空間それぞれに対向した位置に、上下方向に複数に形成されている。
付記3または4に記載の基板処理装置であって、好ましくは、前記ガス供給スリットおよび前記ガス排気スリットは前記円筒部の周方向に長くに形成され、その両端部が曲面状に形成されている。
付記1乃至5に記載の基板処理装置であって、好ましくは、
前記ガス供給エリアの横断面積と前記ガス排気エリアの横断面積とは同じである。
付記1乃至6に記載の基板処理装置であって、好ましくは、
前記ガス供給エリアと前記ガス排気エリアとは同じ数だけ内壁を有し、同じ空間数に区画される。
付記6または付記7に記載の基板処理装置であって、好ましくは、
前記ガス供給エリアの各空間の横断面積と前記ガス供給エリアの各空間に対面する前記ガス排気エリアの各空間の横断面積とは同じ面積である。
付記1乃至8に記載の基板処理装置であって、好ましくは、
前記ガス供給エリアの容積の方が前記ガス排気エリアの容積より大きい。
付記9に記載の基板処理装置であって、好ましくは、
前記ガス供給エリアの内壁の長さの方が前記ガス排気エリアの内壁の長さよりも長い。
付記1乃至10に記載の基板処理装置であって、好ましくは、
前記ガス供給エリアと前記円筒部との境界壁の下端に開口部が形成されている。
付記11に記載の基板処理装置であって、好ましくは、
前記ガス供給エリアの内壁の長さは、前記円筒部の長さよりも短く、かつ、前記ガス供給エリアと前記円筒部との前記境界壁の長さよりも長い。
付記1乃至12に記載の基板処理装置であって、好ましくは、
前記ガス供給スリットの縦の長さは、前記基板間の間隔よりも短い。
付記4乃至13に記載の基板処理装置であって、好ましくは、
前記ガス供給スリットおよび前記ガス排気スリットの段数は前記基板の枚数と同数である。
付記4乃至付記14に記載の基板処理装置であって、好ましくは、
前記ガス供給スリットおよび前記ガス排気スリットの列数は、前記ガス供給エリアの前記空間数および前記ガス排気エリアの前記空間数と同数である。
付記15に記載の基板処理装置であって、好ましくは、
前記ガス供給スリットおよび前記ガス排気スリットの横の長さは、前記ガス供給エリアの前記空間および前記ガス排気エリアの前記空間の横の長さと同じである。
付記1に記載の基板処理装置であって、好ましくは、
前記ガス排気エリアに隣接して前記反応管内の温度を測定する温度センサが内部に設置された温度測定エリアが形成されている。
本発明の別の一態様によれば、
上端に閉塞部を有し、下端に開口部を有する円筒部と、前記円筒部の一側壁の外側に形成されたガス供給エリアと、前記ガス供給エリアと対向する前記円筒部の他側壁の外側に形成されたガス排気エリアとで構成された反応管の円筒部内に基板を搬送する工程と、
その内部の空間を複数の空間に区画する内壁を備えたガス供給エリアから前記円筒部内に処理ガスを供給する工程と、
その内部の空間を複数の空間に区画する内壁を備えたガス排気エリアから前記円筒部内の雰囲気を排気する工程と、を有する半導体装置の製造方法および基板処理方法が提供される。
本発明のさらに他の一態様によれば、
上端に閉塞部を有し、下端に開口部を有する円筒部と、前記円筒部の一側壁の外側に形成されたガス供給エリアと、前記ガス供給エリアと対向する前記円筒部の他側壁の外側に形成されたガス排気エリアとで構成された反応管の円筒部内に基板を搬送する手順と、
その内部の空間を複数の空間に区画する内壁を備えたガス供給エリアから前記円筒部内に処理ガスを供給する手順と、
その内部の空間を複数の空間に区画する内壁を備えたガス排気エリアから前記円筒部内の雰囲気を排気する手順と、
をコンピュータに実行させるプログラム、または、該プログラムを記録したコンピュータ読み取り可能な記録媒体が提供される。
本発明のさらに他の一態様によれば、
上端に閉塞部を有し、下端に開口部を有する円筒部と、
前記円筒部の一側壁の外側に形成されたガス供給エリアと、
前記ガス供給エリアの対向する前記円筒部の他側壁の外側に形成されたガス排気エリアと、を有し
前記ガス供給エリアおよび前記ガス排気エリアは、その内部の空間を複数の空間に区画する内壁を備えるよう構成される反応管が提供される。
200 ウエハ
201 処理室
202 処理炉
203 反応管
207 ヒータ
222 ガス供給エリア
224 ガス排気エリア
231 排気管
310a~310f ガス供給管
Claims (11)
- 複数枚の基板を保持する基板保持部材と、
前記基板保持部材を収容し、前記基板を処理する反応管と、
前記反応管内に処理ガスを供給する処理ガス供給系と、
前記反応管内の雰囲気を排気する排気系と、を有し、
前記反応管は、上端に閉塞部を有し、下端に開口部を有する円筒部と、
前記円筒部の一側壁の外側に形成され、前記処理ガス供給系が接続されたガス供給エリアと、
前記ガス供給エリアと対向する前記円筒部の他側壁の外側に形成され、前記排気系が接続されたガス排気エリアと、を備え、
前記ガス供給エリアおよび前記ガス排気エリアは、その内部の空間を複数の空間に区画する内壁を備えるよう構成された基板処理装置。 - 前記ガス供給エリアと前記円筒部との境界壁に前記処理ガスを前記円筒部内に供給するガス供給スリットが形成された請求項1記載の基板処理装置。
- 前記ガス排気エリアと前記円筒部との境界壁に前記円筒部内の雰囲気を排気するガス排気スリットが形成された請求項2記載の基板処理装置。
- 前記ガス供給スリットおよび前記ガス排気スリットは、前記複数の空間それぞれに対向した位置に、上下方向に複数形成されている請求項3記載の基板処理装置。
- 前記ガス供給スリットおよび前記ガス排気スリットは前記円筒部の周方向に長く形成され、その両端部が曲面状に形成されている請求項4記載の基板処理装置。
- 前記ガス供給エリアのガスの流路の断面積と前記ガス排気エリアのガスの流路の断面積とは同じ面積で形成されている請求項1記載の基板処理装置。
- 前記ガス供給エリアと前記円筒部との境界壁の下端に開口部が形成されている請求項6記載の基板処理装置。
- 前記ガス供給エリアの内壁の長さは、前記円筒部の長さよりも短く、かつ、前記ガス供給エリアと前記円筒部との前記境界壁の長さよりも長い請求項7記載の基板処理装置。
- 前記ガス供給エリアの内壁の長さの方が前記ガス排気エリアの内壁の長さよりも長い請求項8記載の基板処理装置。
- 上端に閉塞部を有し、下端に開口部を有する円筒部と、前記円筒部の一側壁の外側に形成されたガス供給エリアと、前記ガス供給エリアと対向する前記円筒部の他側壁の外側に形成されたガス排気エリアとで構成された反応管の円筒部内に基板を搬送する工程と、
その内部の空間を複数の空間に区画する内壁を備えたガス供給エリアから前記円筒部内に処理ガスを供給する工程と、
その内部の空間を複数の空間に区画する内壁を備えたガス排気エリアから前記円筒部内の雰囲気を排気する工程と、を有する半導体装置の製造方法。 - 上端に閉塞部を有し、下端に開口部を有する円筒部と、
前記円筒部の一側壁の外側に形成されたガス供給エリアと、
前記ガス供給エリアの対向する前記円筒部の他側壁の外側に形成されたガス排気エリアと、を有し
前記ガス供給エリアおよび前記ガス排気エリアは、その内部の空間を複数の空間に区画する内壁を備えるよう構成される反応管。
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Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20180050708A (ko) * | 2016-02-09 | 2018-05-15 | 가부시키가이샤 히다치 고쿠사이 덴키 | 기판 처리 장치 및 반도체 장치의 제조 방법 |
CN108074845A (zh) * | 2016-11-18 | 2018-05-25 | 株式会社日立国际电气 | 基板处理装置、反应管以及半导体装置的制造方法 |
JP2018088520A (ja) * | 2016-11-18 | 2018-06-07 | 株式会社日立国際電気 | 基板処理装置、反応管及び半導体装置の製造方法 |
WO2018150615A1 (ja) * | 2017-02-15 | 2018-08-23 | 株式会社Kokusai Electric | 基板処理装置、反応管、半導体装置の製造方法及びプログラム |
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KR20190035548A (ko) | 2017-09-26 | 2019-04-03 | 가부시키가이샤 코쿠사이 엘렉트릭 | 기판 처리 장치, 반응관, 반도체 장치의 제조 방법 및 기록 매체 |
WO2019180905A1 (ja) * | 2018-03-23 | 2019-09-26 | 株式会社Kokusai Electric | 基板処理装置、半導体装置の製造方法およびプログラム |
JP2019203182A (ja) * | 2018-05-25 | 2019-11-28 | 株式会社Kokusai Electric | 基板処理装置及び半導体装置の製造方法 |
US20210108313A1 (en) * | 2019-10-14 | 2021-04-15 | Samsung Electronics Co., Ltd. | Semiconductor manufacturing apparatus |
Families Citing this family (310)
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US11015245B2 (en) | 2014-03-19 | 2021-05-25 | Asm Ip Holding B.V. | Gas-phase reactor and system having exhaust plenum and components thereof |
US10858737B2 (en) | 2014-07-28 | 2020-12-08 | Asm Ip Holding B.V. | Showerhead assembly and components thereof |
US9890456B2 (en) | 2014-08-21 | 2018-02-13 | Asm Ip Holding B.V. | Method and system for in situ formation of gas-phase compounds |
US10941490B2 (en) | 2014-10-07 | 2021-03-09 | Asm Ip Holding B.V. | Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same |
US9657845B2 (en) | 2014-10-07 | 2017-05-23 | Asm Ip Holding B.V. | Variable conductance gas distribution apparatus and method |
KR102263121B1 (ko) | 2014-12-22 | 2021-06-09 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자 및 그 제조 방법 |
US10529542B2 (en) | 2015-03-11 | 2020-01-07 | Asm Ip Holdings B.V. | Cross-flow reactor and method |
US10276355B2 (en) | 2015-03-12 | 2019-04-30 | Asm Ip Holding B.V. | Multi-zone reactor, system including the reactor, and method of using the same |
US10458018B2 (en) | 2015-06-26 | 2019-10-29 | Asm Ip Holding B.V. | Structures including metal carbide material, devices including the structures, and methods of forming same |
US10600673B2 (en) | 2015-07-07 | 2020-03-24 | Asm Ip Holding B.V. | Magnetic susceptor to baseplate seal |
KR102241665B1 (ko) * | 2015-09-04 | 2021-04-19 | 가부시키가이샤 코쿠사이 엘렉트릭 | 반응관, 기판 처리 장치 및 반도체 장치의 제조 방법 |
US9960072B2 (en) | 2015-09-29 | 2018-05-01 | Asm Ip Holding B.V. | Variable adjustment for precise matching of multiple chamber cavity housings |
US10211308B2 (en) | 2015-10-21 | 2019-02-19 | Asm Ip Holding B.V. | NbMC layers |
US10322384B2 (en) | 2015-11-09 | 2019-06-18 | Asm Ip Holding B.V. | Counter flow mixer for process chamber |
US11139308B2 (en) | 2015-12-29 | 2021-10-05 | Asm Ip Holding B.V. | Atomic layer deposition of III-V compounds to form V-NAND devices |
US10529554B2 (en) | 2016-02-19 | 2020-01-07 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches |
US10468251B2 (en) | 2016-02-19 | 2019-11-05 | Asm Ip Holding B.V. | Method for forming spacers using silicon nitride film for spacer-defined multiple patterning |
US10501866B2 (en) | 2016-03-09 | 2019-12-10 | Asm Ip Holding B.V. | Gas distribution apparatus for improved film uniformity in an epitaxial system |
US10343920B2 (en) | 2016-03-18 | 2019-07-09 | Asm Ip Holding B.V. | Aligned carbon nanotubes |
US9892913B2 (en) | 2016-03-24 | 2018-02-13 | Asm Ip Holding B.V. | Radial and thickness control via biased multi-port injection settings |
WO2017168513A1 (ja) * | 2016-03-28 | 2017-10-05 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法および記録媒体 |
US10865475B2 (en) | 2016-04-21 | 2020-12-15 | Asm Ip Holding B.V. | Deposition of metal borides and silicides |
US10190213B2 (en) | 2016-04-21 | 2019-01-29 | Asm Ip Holding B.V. | Deposition of metal borides |
US10032628B2 (en) | 2016-05-02 | 2018-07-24 | Asm Ip Holding B.V. | Source/drain performance through conformal solid state doping |
US10367080B2 (en) | 2016-05-02 | 2019-07-30 | Asm Ip Holding B.V. | Method of forming a germanium oxynitride film |
KR102592471B1 (ko) | 2016-05-17 | 2023-10-20 | 에이에스엠 아이피 홀딩 비.브이. | 금속 배선 형성 방법 및 이를 이용한 반도체 장치의 제조 방법 |
US11453943B2 (en) | 2016-05-25 | 2022-09-27 | Asm Ip Holding B.V. | Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor |
US10388509B2 (en) | 2016-06-28 | 2019-08-20 | Asm Ip Holding B.V. | Formation of epitaxial layers via dislocation filtering |
US9859151B1 (en) | 2016-07-08 | 2018-01-02 | Asm Ip Holding B.V. | Selective film deposition method to form air gaps |
US10612137B2 (en) | 2016-07-08 | 2020-04-07 | Asm Ip Holdings B.V. | Organic reactants for atomic layer deposition |
US10714385B2 (en) | 2016-07-19 | 2020-07-14 | Asm Ip Holding B.V. | Selective deposition of tungsten |
US10381226B2 (en) | 2016-07-27 | 2019-08-13 | Asm Ip Holding B.V. | Method of processing substrate |
US9812320B1 (en) | 2016-07-28 | 2017-11-07 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US10395919B2 (en) | 2016-07-28 | 2019-08-27 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US9887082B1 (en) | 2016-07-28 | 2018-02-06 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
KR102532607B1 (ko) | 2016-07-28 | 2023-05-15 | 에이에스엠 아이피 홀딩 비.브이. | 기판 가공 장치 및 그 동작 방법 |
KR102613349B1 (ko) | 2016-08-25 | 2023-12-14 | 에이에스엠 아이피 홀딩 비.브이. | 배기 장치 및 이를 이용한 기판 가공 장치와 박막 제조 방법 |
US10410943B2 (en) | 2016-10-13 | 2019-09-10 | Asm Ip Holding B.V. | Method for passivating a surface of a semiconductor and related systems |
US10643826B2 (en) | 2016-10-26 | 2020-05-05 | Asm Ip Holdings B.V. | Methods for thermally calibrating reaction chambers |
US11532757B2 (en) | 2016-10-27 | 2022-12-20 | Asm Ip Holding B.V. | Deposition of charge trapping layers |
US10435790B2 (en) | 2016-11-01 | 2019-10-08 | Asm Ip Holding B.V. | Method of subatmospheric plasma-enhanced ALD using capacitively coupled electrodes with narrow gap |
US10714350B2 (en) | 2016-11-01 | 2020-07-14 | ASM IP Holdings, B.V. | Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
US10229833B2 (en) | 2016-11-01 | 2019-03-12 | Asm Ip Holding B.V. | Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
US10643904B2 (en) | 2016-11-01 | 2020-05-05 | Asm Ip Holdings B.V. | Methods for forming a semiconductor device and related semiconductor device structures |
US10134757B2 (en) | 2016-11-07 | 2018-11-20 | Asm Ip Holding B.V. | Method of processing a substrate and a device manufactured by using the method |
KR102546317B1 (ko) | 2016-11-15 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | 기체 공급 유닛 및 이를 포함하는 기판 처리 장치 |
US10340135B2 (en) | 2016-11-28 | 2019-07-02 | Asm Ip Holding B.V. | Method of topologically restricted plasma-enhanced cyclic deposition of silicon or metal nitride |
KR20180068582A (ko) | 2016-12-14 | 2018-06-22 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US11447861B2 (en) | 2016-12-15 | 2022-09-20 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus and a method of forming a patterned structure |
US11581186B2 (en) | 2016-12-15 | 2023-02-14 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus |
KR20180070971A (ko) | 2016-12-19 | 2018-06-27 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US10269558B2 (en) | 2016-12-22 | 2019-04-23 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US10867788B2 (en) | 2016-12-28 | 2020-12-15 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US11390950B2 (en) | 2017-01-10 | 2022-07-19 | Asm Ip Holding B.V. | Reactor system and method to reduce residue buildup during a film deposition process |
US10655221B2 (en) | 2017-02-09 | 2020-05-19 | Asm Ip Holding B.V. | Method for depositing oxide film by thermal ALD and PEALD |
US10468261B2 (en) | 2017-02-15 | 2019-11-05 | Asm Ip Holding B.V. | Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures |
JP6749268B2 (ja) * | 2017-03-07 | 2020-09-02 | 東京エレクトロン株式会社 | 基板処理装置 |
US10529563B2 (en) | 2017-03-29 | 2020-01-07 | Asm Ip Holdings B.V. | Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures |
US10283353B2 (en) | 2017-03-29 | 2019-05-07 | Asm Ip Holding B.V. | Method of reforming insulating film deposited on substrate with recess pattern |
KR102457289B1 (ko) | 2017-04-25 | 2022-10-21 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 및 반도체 장치의 제조 방법 |
US10770286B2 (en) | 2017-05-08 | 2020-09-08 | Asm Ip Holdings B.V. | Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures |
US10892156B2 (en) | 2017-05-08 | 2021-01-12 | Asm Ip Holding B.V. | Methods for forming a silicon nitride film on a substrate and related semiconductor device structures |
US10446393B2 (en) | 2017-05-08 | 2019-10-15 | Asm Ip Holding B.V. | Methods for forming silicon-containing epitaxial layers and related semiconductor device structures |
US10504742B2 (en) | 2017-05-31 | 2019-12-10 | Asm Ip Holding B.V. | Method of atomic layer etching using hydrogen plasma |
US10886123B2 (en) | 2017-06-02 | 2021-01-05 | Asm Ip Holding B.V. | Methods for forming low temperature semiconductor layers and related semiconductor device structures |
US11306395B2 (en) | 2017-06-28 | 2022-04-19 | Asm Ip Holding B.V. | Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus |
US10685834B2 (en) | 2017-07-05 | 2020-06-16 | Asm Ip Holdings B.V. | Methods for forming a silicon germanium tin layer and related semiconductor device structures |
KR20190009245A (ko) | 2017-07-18 | 2019-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자 구조물 형성 방법 및 관련된 반도체 소자 구조물 |
US11018002B2 (en) | 2017-07-19 | 2021-05-25 | Asm Ip Holding B.V. | Method for selectively depositing a Group IV semiconductor and related semiconductor device structures |
US11374112B2 (en) | 2017-07-19 | 2022-06-28 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US10541333B2 (en) | 2017-07-19 | 2020-01-21 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US10590535B2 (en) | 2017-07-26 | 2020-03-17 | Asm Ip Holdings B.V. | Chemical treatment, deposition and/or infiltration apparatus and method for using the same |
US10605530B2 (en) | 2017-07-26 | 2020-03-31 | Asm Ip Holding B.V. | Assembly of a liner and a flange for a vertical furnace as well as the liner and the vertical furnace |
US10312055B2 (en) | 2017-07-26 | 2019-06-04 | Asm Ip Holding B.V. | Method of depositing film by PEALD using negative bias |
US10692741B2 (en) | 2017-08-08 | 2020-06-23 | Asm Ip Holdings B.V. | Radiation shield |
US10770336B2 (en) | 2017-08-08 | 2020-09-08 | Asm Ip Holding B.V. | Substrate lift mechanism and reactor including same |
US10249524B2 (en) | 2017-08-09 | 2019-04-02 | Asm Ip Holding B.V. | Cassette holder assembly for a substrate cassette and holding member for use in such assembly |
US11139191B2 (en) | 2017-08-09 | 2021-10-05 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US11769682B2 (en) | 2017-08-09 | 2023-09-26 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
USD900036S1 (en) | 2017-08-24 | 2020-10-27 | Asm Ip Holding B.V. | Heater electrical connector and adapter |
US11830730B2 (en) | 2017-08-29 | 2023-11-28 | Asm Ip Holding B.V. | Layer forming method and apparatus |
US11056344B2 (en) | 2017-08-30 | 2021-07-06 | Asm Ip Holding B.V. | Layer forming method |
JP6782362B2 (ja) | 2017-08-30 | 2020-11-11 | 株式会社Kokusai Electric | 保護プレート、基板処理装置及び半導体装置の製造方法 |
KR102491945B1 (ko) | 2017-08-30 | 2023-01-26 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US11295980B2 (en) | 2017-08-30 | 2022-04-05 | Asm Ip Holding B.V. | Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures |
KR102401446B1 (ko) | 2017-08-31 | 2022-05-24 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US10607895B2 (en) | 2017-09-18 | 2020-03-31 | Asm Ip Holdings B.V. | Method for forming a semiconductor device structure comprising a gate fill metal |
KR102630301B1 (ko) | 2017-09-21 | 2024-01-29 | 에이에스엠 아이피 홀딩 비.브이. | 침투성 재료의 순차 침투 합성 방법 처리 및 이를 이용하여 형성된 구조물 및 장치 |
US10844484B2 (en) | 2017-09-22 | 2020-11-24 | Asm Ip Holding B.V. | Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
JP6916766B2 (ja) | 2018-08-27 | 2021-08-11 | 株式会社Kokusai Electric | 基板処理装置及び半導体装置の製造方法 |
US10658205B2 (en) | 2017-09-28 | 2020-05-19 | Asm Ip Holdings B.V. | Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber |
US10403504B2 (en) | 2017-10-05 | 2019-09-03 | Asm Ip Holding B.V. | Method for selectively depositing a metallic film on a substrate |
US10319588B2 (en) | 2017-10-10 | 2019-06-11 | Asm Ip Holding B.V. | Method for depositing a metal chalcogenide on a substrate by cyclical deposition |
US10923344B2 (en) | 2017-10-30 | 2021-02-16 | Asm Ip Holding B.V. | Methods for forming a semiconductor structure and related semiconductor structures |
KR102443047B1 (ko) | 2017-11-16 | 2022-09-14 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 방법 및 그에 의해 제조된 장치 |
US10910262B2 (en) | 2017-11-16 | 2021-02-02 | Asm Ip Holding B.V. | Method of selectively depositing a capping layer structure on a semiconductor device structure |
US11022879B2 (en) | 2017-11-24 | 2021-06-01 | Asm Ip Holding B.V. | Method of forming an enhanced unexposed photoresist layer |
WO2019103610A1 (en) | 2017-11-27 | 2019-05-31 | Asm Ip Holding B.V. | Apparatus including a clean mini environment |
TWI779134B (zh) | 2017-11-27 | 2022-10-01 | 荷蘭商Asm智慧財產控股私人有限公司 | 用於儲存晶圓匣的儲存裝置及批爐總成 |
US10290508B1 (en) | 2017-12-05 | 2019-05-14 | Asm Ip Holding B.V. | Method for forming vertical spacers for spacer-defined patterning |
US10872771B2 (en) | 2018-01-16 | 2020-12-22 | Asm Ip Holding B. V. | Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures |
US11482412B2 (en) | 2018-01-19 | 2022-10-25 | Asm Ip Holding B.V. | Method for depositing a gap-fill layer by plasma-assisted deposition |
TW202325889A (zh) | 2018-01-19 | 2023-07-01 | 荷蘭商Asm 智慧財產控股公司 | 沈積方法 |
USD903477S1 (en) | 2018-01-24 | 2020-12-01 | Asm Ip Holdings B.V. | Metal clamp |
US11018047B2 (en) | 2018-01-25 | 2021-05-25 | Asm Ip Holding B.V. | Hybrid lift pin |
US10535516B2 (en) | 2018-02-01 | 2020-01-14 | Asm Ip Holdings B.V. | Method for depositing a semiconductor structure on a surface of a substrate and related semiconductor structures |
USD880437S1 (en) | 2018-02-01 | 2020-04-07 | Asm Ip Holding B.V. | Gas supply plate for semiconductor manufacturing apparatus |
US11081345B2 (en) | 2018-02-06 | 2021-08-03 | Asm Ip Holding B.V. | Method of post-deposition treatment for silicon oxide film |
CN111699278B (zh) | 2018-02-14 | 2023-05-16 | Asm Ip私人控股有限公司 | 通过循环沉积工艺在衬底上沉积含钌膜的方法 |
US10896820B2 (en) | 2018-02-14 | 2021-01-19 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
US10731249B2 (en) | 2018-02-15 | 2020-08-04 | Asm Ip Holding B.V. | Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus |
KR102636427B1 (ko) | 2018-02-20 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 및 장치 |
US10658181B2 (en) | 2018-02-20 | 2020-05-19 | Asm Ip Holding B.V. | Method of spacer-defined direct patterning in semiconductor fabrication |
US10975470B2 (en) | 2018-02-23 | 2021-04-13 | Asm Ip Holding B.V. | Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment |
US11473195B2 (en) | 2018-03-01 | 2022-10-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus and a method for processing a substrate |
US11629406B2 (en) | 2018-03-09 | 2023-04-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate |
US10593572B2 (en) | 2018-03-15 | 2020-03-17 | Kokusai Electric Corporation | Substrate processing apparatus and method of manufacturing semiconductor device |
US10714362B2 (en) | 2018-03-15 | 2020-07-14 | Kokusai Electric Corporation | Substrate processing apparatus and method of manufacturing semiconductor device |
US11114283B2 (en) | 2018-03-16 | 2021-09-07 | Asm Ip Holding B.V. | Reactor, system including the reactor, and methods of manufacturing and using same |
KR102646467B1 (ko) | 2018-03-27 | 2024-03-11 | 에이에스엠 아이피 홀딩 비.브이. | 기판 상에 전극을 형성하는 방법 및 전극을 포함하는 반도체 소자 구조 |
US10510536B2 (en) | 2018-03-29 | 2019-12-17 | Asm Ip Holding B.V. | Method of depositing a co-doped polysilicon film on a surface of a substrate within a reaction chamber |
US11230766B2 (en) | 2018-03-29 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US11088002B2 (en) | 2018-03-29 | 2021-08-10 | Asm Ip Holding B.V. | Substrate rack and a substrate processing system and method |
KR102501472B1 (ko) | 2018-03-30 | 2023-02-20 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 |
US10903096B2 (en) * | 2018-04-06 | 2021-01-26 | Varian Semiconductor Equipment Associates, Inc. | System and apparatus for process chamber window cooling |
KR20190128558A (ko) | 2018-05-08 | 2019-11-18 | 에이에스엠 아이피 홀딩 비.브이. | 기판 상에 산화물 막을 주기적 증착 공정에 의해 증착하기 위한 방법 및 관련 소자 구조 |
TWI816783B (zh) | 2018-05-11 | 2023-10-01 | 荷蘭商Asm 智慧財產控股公司 | 用於基板上形成摻雜金屬碳化物薄膜之方法及相關半導體元件結構 |
KR102596988B1 (ko) | 2018-05-28 | 2023-10-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 및 그에 의해 제조된 장치 |
US11718913B2 (en) | 2018-06-04 | 2023-08-08 | Asm Ip Holding B.V. | Gas distribution system and reactor system including same |
US11270899B2 (en) | 2018-06-04 | 2022-03-08 | Asm Ip Holding B.V. | Wafer handling chamber with moisture reduction |
US11286562B2 (en) | 2018-06-08 | 2022-03-29 | Asm Ip Holding B.V. | Gas-phase chemical reactor and method of using same |
KR102568797B1 (ko) | 2018-06-21 | 2023-08-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 시스템 |
US10797133B2 (en) | 2018-06-21 | 2020-10-06 | Asm Ip Holding B.V. | Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures |
US11492703B2 (en) | 2018-06-27 | 2022-11-08 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
CN112292477A (zh) | 2018-06-27 | 2021-01-29 | Asm Ip私人控股有限公司 | 用于形成含金属的材料的循环沉积方法及包含含金属的材料的膜和结构 |
KR20200002519A (ko) | 2018-06-29 | 2020-01-08 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 및 반도체 장치의 제조 방법 |
US10612136B2 (en) | 2018-06-29 | 2020-04-07 | ASM IP Holding, B.V. | Temperature-controlled flange and reactor system including same |
US10388513B1 (en) | 2018-07-03 | 2019-08-20 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10755922B2 (en) | 2018-07-03 | 2020-08-25 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10767789B2 (en) | 2018-07-16 | 2020-09-08 | Asm Ip Holding B.V. | Diaphragm valves, valve components, and methods for forming valve components |
US10483099B1 (en) | 2018-07-26 | 2019-11-19 | Asm Ip Holding B.V. | Method for forming thermally stable organosilicon polymer film |
KR102501650B1 (ko) * | 2018-08-03 | 2023-02-21 | 가부시키가이샤 코쿠사이 엘렉트릭 | 기판 처리 장치 및 반도체 장치의 제조 방법 |
US11053591B2 (en) | 2018-08-06 | 2021-07-06 | Asm Ip Holding B.V. | Multi-port gas injection system and reactor system including same |
US10883175B2 (en) | 2018-08-09 | 2021-01-05 | Asm Ip Holding B.V. | Vertical furnace for processing substrates and a liner for use therein |
US10829852B2 (en) | 2018-08-16 | 2020-11-10 | Asm Ip Holding B.V. | Gas distribution device for a wafer processing apparatus |
US11430674B2 (en) | 2018-08-22 | 2022-08-30 | Asm Ip Holding B.V. | Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
KR20200030162A (ko) | 2018-09-11 | 2020-03-20 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 |
US11024523B2 (en) | 2018-09-11 | 2021-06-01 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US11049751B2 (en) | 2018-09-14 | 2021-06-29 | Asm Ip Holding B.V. | Cassette supply system to store and handle cassettes and processing apparatus equipped therewith |
CN110970344A (zh) | 2018-10-01 | 2020-04-07 | Asm Ip控股有限公司 | 衬底保持设备、包含所述设备的系统及其使用方法 |
US11232963B2 (en) | 2018-10-03 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
KR102592699B1 (ko) | 2018-10-08 | 2023-10-23 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 유닛 및 이를 포함하는 박막 증착 장치와 기판 처리 장치 |
US10847365B2 (en) | 2018-10-11 | 2020-11-24 | Asm Ip Holding B.V. | Method of forming conformal silicon carbide film by cyclic CVD |
US10811256B2 (en) | 2018-10-16 | 2020-10-20 | Asm Ip Holding B.V. | Method for etching a carbon-containing feature |
KR102546322B1 (ko) | 2018-10-19 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 및 기판 처리 방법 |
KR102605121B1 (ko) | 2018-10-19 | 2023-11-23 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 및 기판 처리 방법 |
USD948463S1 (en) | 2018-10-24 | 2022-04-12 | Asm Ip Holding B.V. | Susceptor for semiconductor substrate supporting apparatus |
US10381219B1 (en) | 2018-10-25 | 2019-08-13 | Asm Ip Holding B.V. | Methods for forming a silicon nitride film |
US11087997B2 (en) | 2018-10-31 | 2021-08-10 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
KR20200051105A (ko) | 2018-11-02 | 2020-05-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 유닛 및 이를 포함하는 기판 처리 장치 |
US11572620B2 (en) | 2018-11-06 | 2023-02-07 | Asm Ip Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
US11031242B2 (en) | 2018-11-07 | 2021-06-08 | Asm Ip Holding B.V. | Methods for depositing a boron doped silicon germanium film |
US10847366B2 (en) | 2018-11-16 | 2020-11-24 | Asm Ip Holding B.V. | Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process |
US10818758B2 (en) | 2018-11-16 | 2020-10-27 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
US10559458B1 (en) | 2018-11-26 | 2020-02-11 | Asm Ip Holding B.V. | Method of forming oxynitride film |
US11217444B2 (en) | 2018-11-30 | 2022-01-04 | Asm Ip Holding B.V. | Method for forming an ultraviolet radiation responsive metal oxide-containing film |
KR102636428B1 (ko) | 2018-12-04 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치를 세정하는 방법 |
US11158513B2 (en) | 2018-12-13 | 2021-10-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
TW202037745A (zh) | 2018-12-14 | 2020-10-16 | 荷蘭商Asm Ip私人控股有限公司 | 形成裝置結構之方法、其所形成之結構及施行其之系統 |
TWI819180B (zh) | 2019-01-17 | 2023-10-21 | 荷蘭商Asm 智慧財產控股公司 | 藉由循環沈積製程於基板上形成含過渡金屬膜之方法 |
KR20200091543A (ko) | 2019-01-22 | 2020-07-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
CN111524788B (zh) | 2019-02-01 | 2023-11-24 | Asm Ip私人控股有限公司 | 氧化硅的拓扑选择性膜形成的方法 |
JP2020136677A (ja) | 2019-02-20 | 2020-08-31 | エーエスエム・アイピー・ホールディング・ベー・フェー | 基材表面内に形成された凹部を充填するための周期的堆積方法および装置 |
KR102626263B1 (ko) | 2019-02-20 | 2024-01-16 | 에이에스엠 아이피 홀딩 비.브이. | 처리 단계를 포함하는 주기적 증착 방법 및 이를 위한 장치 |
JP2020136678A (ja) | 2019-02-20 | 2020-08-31 | エーエスエム・アイピー・ホールディング・ベー・フェー | 基材表面内に形成された凹部を充填するための方法および装置 |
US11482533B2 (en) | 2019-02-20 | 2022-10-25 | Asm Ip Holding B.V. | Apparatus and methods for plug fill deposition in 3-D NAND applications |
JP2020133004A (ja) | 2019-02-22 | 2020-08-31 | エーエスエム・アイピー・ホールディング・ベー・フェー | 基材を処理するための基材処理装置および方法 |
KR20200108242A (ko) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 질화물 층을 선택적으로 증착하는 방법, 및 선택적으로 증착된 실리콘 질화물 층을 포함하는 구조체 |
US11742198B2 (en) | 2019-03-08 | 2023-08-29 | Asm Ip Holding B.V. | Structure including SiOCN layer and method of forming same |
KR20200108243A (ko) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | SiOC 층을 포함한 구조체 및 이의 형성 방법 |
KR20200116033A (ko) | 2019-03-28 | 2020-10-08 | 에이에스엠 아이피 홀딩 비.브이. | 도어 개방기 및 이를 구비한 기판 처리 장치 |
KR20200116855A (ko) | 2019-04-01 | 2020-10-13 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자를 제조하는 방법 |
US11447864B2 (en) | 2019-04-19 | 2022-09-20 | Asm Ip Holding B.V. | Layer forming method and apparatus |
KR20200125453A (ko) | 2019-04-24 | 2020-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 기상 반응기 시스템 및 이를 사용하는 방법 |
KR20200130121A (ko) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | 딥 튜브가 있는 화학물질 공급원 용기 |
KR20200130118A (ko) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | 비정질 탄소 중합체 막을 개질하는 방법 |
KR20200130652A (ko) | 2019-05-10 | 2020-11-19 | 에이에스엠 아이피 홀딩 비.브이. | 표면 상에 재료를 증착하는 방법 및 본 방법에 따라 형성된 구조 |
JP2020188255A (ja) | 2019-05-16 | 2020-11-19 | エーエスエム アイピー ホールディング ビー.ブイ. | ウェハボートハンドリング装置、縦型バッチ炉および方法 |
JP2020188254A (ja) | 2019-05-16 | 2020-11-19 | エーエスエム アイピー ホールディング ビー.ブイ. | ウェハボートハンドリング装置、縦型バッチ炉および方法 |
USD975665S1 (en) | 2019-05-17 | 2023-01-17 | Asm Ip Holding B.V. | Susceptor shaft |
USD947913S1 (en) | 2019-05-17 | 2022-04-05 | Asm Ip Holding B.V. | Susceptor shaft |
USD935572S1 (en) | 2019-05-24 | 2021-11-09 | Asm Ip Holding B.V. | Gas channel plate |
USD922229S1 (en) | 2019-06-05 | 2021-06-15 | Asm Ip Holding B.V. | Device for controlling a temperature of a gas supply unit |
KR20200141003A (ko) | 2019-06-06 | 2020-12-17 | 에이에스엠 아이피 홀딩 비.브이. | 가스 감지기를 포함하는 기상 반응기 시스템 |
KR20200143254A (ko) | 2019-06-11 | 2020-12-23 | 에이에스엠 아이피 홀딩 비.브이. | 개질 가스를 사용하여 전자 구조를 형성하는 방법, 상기 방법을 수행하기 위한 시스템, 및 상기 방법을 사용하여 형성되는 구조 |
USD944946S1 (en) | 2019-06-14 | 2022-03-01 | Asm Ip Holding B.V. | Shower plate |
USD931978S1 (en) | 2019-06-27 | 2021-09-28 | Asm Ip Holding B.V. | Showerhead vacuum transport |
KR20210005515A (ko) | 2019-07-03 | 2021-01-14 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치용 온도 제어 조립체 및 이를 사용하는 방법 |
JP7499079B2 (ja) | 2019-07-09 | 2024-06-13 | エーエスエム・アイピー・ホールディング・ベー・フェー | 同軸導波管を用いたプラズマ装置、基板処理方法 |
CN112216646A (zh) | 2019-07-10 | 2021-01-12 | Asm Ip私人控股有限公司 | 基板支撑组件及包括其的基板处理装置 |
KR20210010307A (ko) | 2019-07-16 | 2021-01-27 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
KR20210010820A (ko) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 게르마늄 구조를 형성하는 방법 |
KR20210010816A (ko) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 라디칼 보조 점화 플라즈마 시스템 및 방법 |
US11643724B2 (en) | 2019-07-18 | 2023-05-09 | Asm Ip Holding B.V. | Method of forming structures using a neutral beam |
CN112242296A (zh) | 2019-07-19 | 2021-01-19 | Asm Ip私人控股有限公司 | 形成拓扑受控的无定形碳聚合物膜的方法 |
CN112309843A (zh) | 2019-07-29 | 2021-02-02 | Asm Ip私人控股有限公司 | 实现高掺杂剂掺入的选择性沉积方法 |
CN112309899A (zh) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | 基板处理设备 |
CN112309900A (zh) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | 基板处理设备 |
US11587815B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11587814B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11227782B2 (en) | 2019-07-31 | 2022-01-18 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
CN112323048B (zh) | 2019-08-05 | 2024-02-09 | Asm Ip私人控股有限公司 | 用于化学源容器的液位传感器 |
USD965524S1 (en) | 2019-08-19 | 2022-10-04 | Asm Ip Holding B.V. | Susceptor support |
USD965044S1 (en) | 2019-08-19 | 2022-09-27 | Asm Ip Holding B.V. | Susceptor shaft |
JP2021031769A (ja) | 2019-08-21 | 2021-03-01 | エーエスエム アイピー ホールディング ビー.ブイ. | 成膜原料混合ガス生成装置及び成膜装置 |
USD949319S1 (en) | 2019-08-22 | 2022-04-19 | Asm Ip Holding B.V. | Exhaust duct |
KR20210024423A (ko) | 2019-08-22 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 홀을 구비한 구조체를 형성하기 위한 방법 |
USD930782S1 (en) | 2019-08-22 | 2021-09-14 | Asm Ip Holding B.V. | Gas distributor |
USD979506S1 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Insulator |
USD940837S1 (en) | 2019-08-22 | 2022-01-11 | Asm Ip Holding B.V. | Electrode |
US11286558B2 (en) | 2019-08-23 | 2022-03-29 | Asm Ip Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
KR20210024420A (ko) | 2019-08-23 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 비스(디에틸아미노)실란을 사용하여 peald에 의해 개선된 품질을 갖는 실리콘 산화물 막을 증착하기 위한 방법 |
KR20210029090A (ko) | 2019-09-04 | 2021-03-15 | 에이에스엠 아이피 홀딩 비.브이. | 희생 캡핑 층을 이용한 선택적 증착 방법 |
KR20210029663A (ko) | 2019-09-05 | 2021-03-16 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US11562901B2 (en) | 2019-09-25 | 2023-01-24 | Asm Ip Holding B.V. | Substrate processing method |
CN112593212B (zh) | 2019-10-02 | 2023-12-22 | Asm Ip私人控股有限公司 | 通过循环等离子体增强沉积工艺形成拓扑选择性氧化硅膜的方法 |
CN112635282A (zh) | 2019-10-08 | 2021-04-09 | Asm Ip私人控股有限公司 | 具有连接板的基板处理装置、基板处理方法 |
KR20210042810A (ko) | 2019-10-08 | 2021-04-20 | 에이에스엠 아이피 홀딩 비.브이. | 활성 종을 이용하기 위한 가스 분배 어셈블리를 포함한 반응기 시스템 및 이를 사용하는 방법 |
KR20210043460A (ko) | 2019-10-10 | 2021-04-21 | 에이에스엠 아이피 홀딩 비.브이. | 포토레지스트 하부층을 형성하기 위한 방법 및 이를 포함한 구조체 |
US12009241B2 (en) | 2019-10-14 | 2024-06-11 | Asm Ip Holding B.V. | Vertical batch furnace assembly with detector to detect cassette |
TWI834919B (zh) | 2019-10-16 | 2024-03-11 | 荷蘭商Asm Ip私人控股有限公司 | 氧化矽之拓撲選擇性膜形成之方法 |
US11637014B2 (en) | 2019-10-17 | 2023-04-25 | Asm Ip Holding B.V. | Methods for selective deposition of doped semiconductor material |
KR20210047808A (ko) | 2019-10-21 | 2021-04-30 | 에이에스엠 아이피 홀딩 비.브이. | 막을 선택적으로 에칭하기 위한 장치 및 방법 |
KR20210050453A (ko) | 2019-10-25 | 2021-05-07 | 에이에스엠 아이피 홀딩 비.브이. | 기판 표면 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조 |
US11646205B2 (en) | 2019-10-29 | 2023-05-09 | Asm Ip Holding B.V. | Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same |
KR20210054983A (ko) | 2019-11-05 | 2021-05-14 | 에이에스엠 아이피 홀딩 비.브이. | 도핑된 반도체 층을 갖는 구조체 및 이를 형성하기 위한 방법 및 시스템 |
US11501968B2 (en) | 2019-11-15 | 2022-11-15 | Asm Ip Holding B.V. | Method for providing a semiconductor device with silicon filled gaps |
KR20210062561A (ko) | 2019-11-20 | 2021-05-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판의 표면 상에 탄소 함유 물질을 증착하는 방법, 상기 방법을 사용하여 형성된 구조물, 및 상기 구조물을 형성하기 위한 시스템 |
KR20210065848A (ko) | 2019-11-26 | 2021-06-04 | 에이에스엠 아이피 홀딩 비.브이. | 제1 유전체 표면과 제2 금속성 표면을 포함한 기판 상에 타겟 막을 선택적으로 형성하기 위한 방법 |
CN112951697A (zh) | 2019-11-26 | 2021-06-11 | Asm Ip私人控股有限公司 | 基板处理设备 |
CN112885693A (zh) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | 基板处理设备 |
CN112885692A (zh) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | 基板处理设备 |
JP2021090042A (ja) | 2019-12-02 | 2021-06-10 | エーエスエム アイピー ホールディング ビー.ブイ. | 基板処理装置、基板処理方法 |
KR20210070898A (ko) | 2019-12-04 | 2021-06-15 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
KR102256106B1 (ko) * | 2019-12-13 | 2021-05-27 | 주식회사 금강쿼츠 | 반도체 제조에 사용되는 압력보충용 2중관 노즐 |
KR20210078405A (ko) | 2019-12-17 | 2021-06-28 | 에이에스엠 아이피 홀딩 비.브이. | 바나듐 나이트라이드 층을 형성하는 방법 및 바나듐 나이트라이드 층을 포함하는 구조 |
US11527403B2 (en) | 2019-12-19 | 2022-12-13 | Asm Ip Holding B.V. | Methods for filling a gap feature on a substrate surface and related semiconductor structures |
JP2021109175A (ja) | 2020-01-06 | 2021-08-02 | エーエスエム・アイピー・ホールディング・ベー・フェー | ガス供給アセンブリ、その構成要素、およびこれを含む反応器システム |
US11993847B2 (en) | 2020-01-08 | 2024-05-28 | Asm Ip Holding B.V. | Injector |
TW202129068A (zh) | 2020-01-20 | 2021-08-01 | 荷蘭商Asm Ip控股公司 | 形成薄膜之方法及修飾薄膜表面之方法 |
TW202130846A (zh) | 2020-02-03 | 2021-08-16 | 荷蘭商Asm Ip私人控股有限公司 | 形成包括釩或銦層的結構之方法 |
KR20210100010A (ko) | 2020-02-04 | 2021-08-13 | 에이에스엠 아이피 홀딩 비.브이. | 대형 물품의 투과율 측정을 위한 방법 및 장치 |
US11776846B2 (en) | 2020-02-07 | 2023-10-03 | Asm Ip Holding B.V. | Methods for depositing gap filling fluids and related systems and devices |
TW202146715A (zh) | 2020-02-17 | 2021-12-16 | 荷蘭商Asm Ip私人控股有限公司 | 用於生長磷摻雜矽層之方法及其系統 |
TW202203344A (zh) | 2020-02-28 | 2022-01-16 | 荷蘭商Asm Ip控股公司 | 專用於零件清潔的系統 |
KR20210116240A (ko) | 2020-03-11 | 2021-09-27 | 에이에스엠 아이피 홀딩 비.브이. | 조절성 접합부를 갖는 기판 핸들링 장치 |
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Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000294511A (ja) * | 1999-04-09 | 2000-10-20 | Ftl:Kk | 半導体装置の製造装置 |
JP2001077042A (ja) * | 1999-09-02 | 2001-03-23 | Tokyo Electron Ltd | 縦型熱処理装置 |
JP2002222806A (ja) * | 2001-01-26 | 2002-08-09 | Ebara Corp | 基板処理装置 |
JP2004162114A (ja) * | 2002-11-13 | 2004-06-10 | Mitsubishi Electric Corp | 薄膜形成装置 |
JP2005317734A (ja) * | 2004-04-28 | 2005-11-10 | Hitachi Kokusai Electric Inc | 基板処理装置 |
JP2007109711A (ja) * | 2005-10-11 | 2007-04-26 | Tokyo Electron Ltd | 処理装置、処理方法及び記憶媒体 |
JP2011512031A (ja) * | 2008-02-12 | 2011-04-14 | チェ,キュ−ジョン | バッチ型原子層蒸着装置 |
WO2013073887A1 (ko) * | 2011-11-17 | 2013-05-23 | 주식회사 유진테크 | 복수의 배기포트를 포함하는 기판 처리 장치 및 방법 |
JP2014207435A (ja) * | 2013-03-21 | 2014-10-30 | 東京エレクトロン株式会社 | バッチ式縦型基板処理装置および基板保持具 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05198517A (ja) | 1992-01-21 | 1993-08-06 | Tokyo Electron Ltd | バッチ式ガス処理装置 |
JP4204840B2 (ja) | 2002-10-08 | 2009-01-07 | 株式会社日立国際電気 | 基板処埋装置 |
US20070137794A1 (en) * | 2003-09-24 | 2007-06-21 | Aviza Technology, Inc. | Thermal processing system with across-flow liner |
JP5157100B2 (ja) * | 2006-08-04 | 2013-03-06 | 東京エレクトロン株式会社 | 成膜装置及び成膜方法 |
US20090197424A1 (en) * | 2008-01-31 | 2009-08-06 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus and method for manufacturing semiconductor device |
JP5284182B2 (ja) * | 2008-07-23 | 2013-09-11 | 株式会社日立国際電気 | 基板処理装置および半導体装置の製造方法 |
JP5087657B2 (ja) | 2009-08-04 | 2012-12-05 | 株式会社日立国際電気 | 半導体装置の製造方法及び基板処理装置 |
JP5610438B2 (ja) * | 2010-01-29 | 2014-10-22 | 株式会社日立国際電気 | 基板処理装置及び半導体装置の製造方法 |
JP5682290B2 (ja) | 2010-12-20 | 2015-03-11 | 東京エレクトロン株式会社 | 炭素含有薄膜のスリミング方法及び酸化装置 |
JP6105967B2 (ja) * | 2012-03-21 | 2017-03-29 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム |
-
2014
- 2014-09-30 WO PCT/JP2014/076023 patent/WO2015041376A1/ja active Application Filing
- 2014-09-30 KR KR1020207016533A patent/KR102268374B1/ko active IP Right Grant
- 2014-09-30 US US15/513,027 patent/US10811271B2/en active Active
- 2014-09-30 KR KR1020177007859A patent/KR101949060B1/ko active IP Right Grant
- 2014-09-30 SG SG11201702331YA patent/SG11201702331YA/en unknown
- 2014-09-30 JP JP2015538001A patent/JP6257000B2/ja active Active
- 2014-09-30 KR KR1020187036811A patent/KR102123942B1/ko active IP Right Grant
-
2015
- 2015-06-22 TW TW104119992A patent/TWI585853B/zh active
-
2019
- 2019-09-05 US US16/561,695 patent/US10950457B2/en active Active
-
2021
- 2021-02-03 US US17/166,256 patent/US20210159083A1/en active Pending
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000294511A (ja) * | 1999-04-09 | 2000-10-20 | Ftl:Kk | 半導体装置の製造装置 |
JP2001077042A (ja) * | 1999-09-02 | 2001-03-23 | Tokyo Electron Ltd | 縦型熱処理装置 |
JP2002222806A (ja) * | 2001-01-26 | 2002-08-09 | Ebara Corp | 基板処理装置 |
JP2004162114A (ja) * | 2002-11-13 | 2004-06-10 | Mitsubishi Electric Corp | 薄膜形成装置 |
JP2005317734A (ja) * | 2004-04-28 | 2005-11-10 | Hitachi Kokusai Electric Inc | 基板処理装置 |
JP2007109711A (ja) * | 2005-10-11 | 2007-04-26 | Tokyo Electron Ltd | 処理装置、処理方法及び記憶媒体 |
JP2011512031A (ja) * | 2008-02-12 | 2011-04-14 | チェ,キュ−ジョン | バッチ型原子層蒸着装置 |
WO2013073887A1 (ko) * | 2011-11-17 | 2013-05-23 | 주식회사 유진테크 | 복수의 배기포트를 포함하는 기판 처리 장치 및 방법 |
JP2014207435A (ja) * | 2013-03-21 | 2014-10-30 | 東京エレクトロン株式会社 | バッチ式縦型基板処理装置および基板保持具 |
Cited By (31)
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KR102043876B1 (ko) * | 2016-02-09 | 2019-11-12 | 가부시키가이샤 코쿠사이 엘렉트릭 | 기판 처리 장치 및 반도체 장치의 제조 방법 |
US11952664B2 (en) | 2016-02-09 | 2024-04-09 | Kokusai Electric Corporation | Substrate processing apparatus and method of manufacturing semiconductor device |
KR20180050708A (ko) * | 2016-02-09 | 2018-05-15 | 가부시키가이샤 히다치 고쿠사이 덴키 | 기판 처리 장치 및 반도체 장치의 제조 방법 |
US11542601B2 (en) | 2016-02-09 | 2023-01-03 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus and method of manufacturing semiconductor device |
CN108074845A (zh) * | 2016-11-18 | 2018-05-25 | 株式会社日立国际电气 | 基板处理装置、反应管以及半导体装置的制造方法 |
JP2018088520A (ja) * | 2016-11-18 | 2018-06-07 | 株式会社日立国際電気 | 基板処理装置、反応管及び半導体装置の製造方法 |
CN108074845B (zh) * | 2016-11-18 | 2021-12-03 | 株式会社国际电气 | 基板处理装置、反应管以及半导体装置的制造方法 |
US11359283B2 (en) | 2016-11-18 | 2022-06-14 | Kokusai Electric Corporation | Reaction tube structure and substrate processing apparatus |
WO2018150615A1 (ja) * | 2017-02-15 | 2018-08-23 | 株式会社Kokusai Electric | 基板処理装置、反応管、半導体装置の製造方法及びプログラム |
CN110121764A (zh) * | 2017-02-15 | 2019-08-13 | 株式会社国际电气 | 衬底处理装置、反应管、半导体器件的制造方法及程序 |
KR102238585B1 (ko) * | 2017-02-15 | 2021-04-09 | 가부시키가이샤 코쿠사이 엘렉트릭 | 기판 처리 장치, 반응관, 반도체 장치의 제조 방법 및 프로그램 |
US10961625B2 (en) | 2017-02-15 | 2021-03-30 | Kokusai Electric Corporation | Substrate processing apparatus, reaction tube and method of manufacturing semiconductor device |
JPWO2018150615A1 (ja) * | 2017-02-15 | 2019-11-07 | 株式会社Kokusai Electric | 基板処理装置、反応管、半導体装置の製造方法及びプログラム |
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KR101949060B1 (ko) | 2019-05-20 |
KR102268374B1 (ko) | 2021-06-23 |
US20190393045A1 (en) | 2019-12-26 |
JP6257000B2 (ja) | 2018-01-10 |
JPWO2015041376A1 (ja) | 2017-07-06 |
US20170294318A1 (en) | 2017-10-12 |
SG11201702331YA (en) | 2017-04-27 |
KR20200070430A (ko) | 2020-06-17 |
US10950457B2 (en) | 2021-03-16 |
TW201630070A (zh) | 2016-08-16 |
US20210159083A1 (en) | 2021-05-27 |
KR102123942B1 (ko) | 2020-06-17 |
KR20180137607A (ko) | 2018-12-27 |
TWI585853B (zh) | 2017-06-01 |
KR20170042789A (ko) | 2017-04-19 |
US10811271B2 (en) | 2020-10-20 |
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