JP6782362B2 - 保護プレート、基板処理装置及び半導体装置の製造方法 - Google Patents
保護プレート、基板処理装置及び半導体装置の製造方法 Download PDFInfo
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Description
<α<120°の範囲内で適宜設定される。尚、中心角αが120°を超える場合には、処理ガス濃度が臨界値を超える虞れがあり、処理容器7内に副生成物が付着する可能性がある為、好ましくない。
複数枚のウェーハWがボート14に装填(ウェーハチャージ)されると、ボート14はボートエレベータ17によって処理室8内に搬入(ボートロード)され、反応管2の下部以降は蓋部9によって気密に閉塞(シール)された状態となる。この時、第1パージガス供給部から、第1パージガス53としてN2 ガスを間隙41を介してノズル23a〜23cの基部に供給する。又、第2パージガス供給部から、第2パージガス54としてN2 ガスを、第2パージガス流路27を介して側壁部29とマニホールド5との間に供給する。第1パージガス53、第2パージガス54の供給は、少なくとも成膜処理が完了する迄継続される。
処理室8内が所定の圧力(真空度)となる様に、真空ポンプ35によって真空排気(減圧排気)される。処理室8内の圧力は、圧力センサ33で測定され、測定された圧力情報に基づきAPCバルブ34がフィードバック制御される。又、処理室8内のウェーハWが所定の温度となる様に、ヒータ3によって加熱される。この際、処理室8が所定の温度分布となる様に、温度検出器4が検出した温度情報に基づきヒータ3への通電具合がフィードバック制御される。又、回転機構16によるボート14及びウェーハWの回転を開始する。
[原料ガス供給工程]
処理室8内の温度が予め設定された処理温度に安定すると、処理室8内のウェーハWに対してDCSガスを供給する。DCSガスは、MFC21aにて所望の流量となる様に制御され、ガス供給管19a及びノズル23aを介して処理室8内に供給される。この時、第1パージガス供給部、第2パージガス供給部から炉口部に対してN2 ガスが供給されている。これにより、ノズル23a〜23cの基部と周辺部を第1パージガス53で集中的にパージできると共に、それ以外の部分を第2パージガス54でパージし、炉口部の原料ガス濃度を希釈できる。尚、この工程に於いて、第1パージガス供給部、第2パージガス供給部によるN2 ガスの供給を一時的に増加させてもよい。
次に、DCSガスの供給を停止し、真空ポンプ35により処理室8内を真空排気する。この時、不活性ガス供給部から、不活性ガスとしてN2 ガスを処理室8内に供給してもよい(不活性ガスパージ)。
次に、処理室8内のウェーハWに対してO2 ガスを供給する。O2 ガスは、MFC21bにて所望の流量となる様に制御され、ガス供給管19b及びノズル23bを介して処理室8内に供給される。この時、第1パージガス供給部、第2パージガス供給部から炉口部に対してN2 ガスが供給されている。これにより、ノズル23a〜23cの基部と周辺領域を集中的にパージできると共に、その他の部分についてもパージでき、炉口部に於ける反応ガス濃度を希釈することができる。
次に、O2 ガスの供給を停止し、真空ポンプ35により処理室8内を真空排気する。この時、不活性ガス供給部からN2 ガスを処理室8内に供給してもよい(不活性ガスパージ)。
所定膜厚の膜を形成した後、不活性ガス供給部からN2 ガスが供給され、処理室8内がN2 ガスに置換されると共に、処理室8の圧力が常圧に復帰される。その後、ボートエレベータ17により蓋部9が降下され、ボート14が反応管2から搬出(ボートアンロード)される。その後、処理済ウェーハWは、ボート14より取出される(ウェーハディスチャージ)。
処理温度(ウェーハ温度):300℃〜700℃、
処理圧力(処理室内圧力):1Pa〜4000Pa、
DCSガス:100sccm〜10000sccm、
O2 ガス:100sccm〜10000sccm、
N2 ガス:100sccm〜10000sccm、
それぞれの処理条件を、それぞれの範囲内の値に設定することで、成膜処理を適正に進行させることができる。
2 反応管
5 マニホールド
7 処理容器
8 処理室
9 蓋部
12 保護プレート
14 ボート
15 断熱構造体
18 ガス供給機構
26 排気口
27 第2パージガス流路
28 第1薄肉部
29 側壁部
45 厚肉部
47 第2薄肉部
48 第3薄肉部
49 突出部
52 段差部
Claims (9)
- 下端が開放された円筒状の反応管の開口を気密に閉塞する蓋部上に設けられる保護プレートであって、前記蓋部の上面に少なくとも下面の一部が接する様設けられた略円盤状の円板部と、該円板部の外周端から垂直に延出する側壁部と、前記下面に形成されたループ状の溝と、前記下面の前記溝よりも外周側に形成され、前記蓋部の上面との間に所定の隙間を生じさせる段差部とを具備し、前記蓋部に形成されたガス供給口から前記溝に供給されたガスが、前記蓋部と前記段差部との間を通って前記側壁部の外側全体に供給される様構成された保護プレート。
- 上面の外周端部の一部に形成され、上方に近接して設けられる部材との間に部分的に広い間隙を生じさせる薄肉部を更に具備し、前記部材内に供給されたガスが集中的に前記間隙より流出する様構成された請求項1に記載の保護プレート。
- 処理される基板を内部に収容し、下端が開口する処理容器と、前記開口を気密に閉塞する蓋部と、前記処理容器内で前記基板を保持する基板保持具と、前記蓋部と前記基板保持具との間に設けられる断熱構造体と、前記処理容器内に処理ガスを供給するノズルを含む処理ガス供給機構と、前記蓋部の上面に設けられる保護プレートと、前記断熱構造体と前記保護プレートとの間に形成される間隙を介して、前記処理容器下部の前記ノズルの基部及び基部周辺に第1パージガスを供給する第1パージガス供給機構と、前記蓋部と前記保護プレートとの間に形成される間隙を介して、少なくとも前記処理容器下部の前記ノズルの基部及び基部周辺以外の部分に第2パージガスを供給する第2パージガス供給機構とを具備し、
前記処理容器は、上端が閉塞した筒状の反応管と、前記反応管の下端に接続される、反応管よりも短い筒状のマニホールドとを有し、該マニホールドに前記ノズルが取付けられ、前記反応管は前記マニホールドを介して前記蓋部に閉塞され、
前記保護プレートは、前記蓋部の上面に少なくとも下面の一部が接する様設けられた略円盤状の円板部と、該円板部の外周端から垂直に延出する側壁部と、下面に形成されるループ状の溝と、前記下面の少なくとも前記溝よりも外周側に形成されて前記蓋部の上面との間に所定の隙間を生じさせる段差部とを具備し、前記第2パージガス供給機構は、前記蓋部に形成されたガス供給口を介して第2パージガスを前記溝に供給し、前記側壁部の外側を所定の範囲の流量若しくは流速でパージする様構成された基板処理装置。 - 前記蓋部と前記段差部との間は前記第2パージガスの流路の一部となり、前記溝に供給された前記第2パージガスは、前記蓋部と前記段差部との間を半径方向外側に向って流通する様構成され、前記側壁部と前記マニホールドとの間に所定の隙間が形成され、前記側壁部と前記マニホールドとの間が前記第2パージガスの流路の一部となる様構成された請求項3に記載の基板処理装置。
- 前記処理容器は、真空ポンプに接続される排気口を有し、該排気口は前記ノズルの反対側に設けられた請求項3又は4に記載の基板処理装置。
- 前記側壁部は、前記第1パージガス供給機構から供給される前記第1パージガスの供給経路から取除かれた請求項3又は4に記載の基板処理装置。
- 前記保護プレートは、その上面の外周端部の一部に形成されて前記断熱構造体との間に部分的に広い間隙を生じさせる薄肉部を更に具備するに請求項3又は4に記載の基板処理装置。
- 前記保護プレートの上面には、前記薄肉部の内周端から外周端に向って、前記薄肉部の内側と同じ高さを保って突出する突出部が形成され、前記ガス供給口は前記突出部の裏面に設けられた請求項7に記載の基板処理装置。
- 請求項3に記載の基板処理装置を用いた半導体装置の製造方法であって、基板搬入工程と、基板処理工程と、基板搬出工程とを有し、前記基板処理工程では、前記第1パージガス供給機構と前記第2パージガス供給機構から成膜に影響しない所定量のパージガスを常時供給する半導体装置の製造方法。
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