JPWO2018150615A1 - 基板処理装置、反応管、半導体装置の製造方法及びプログラム - Google Patents
基板処理装置、反応管、半導体装置の製造方法及びプログラム Download PDFInfo
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Abstract
Description
複数枚の基板を保持する基板保持具(217)と、
反応管内部に設置され、前記基板保持具を収容して前記基板を処理する処理室を有する筒部(209)と、
前記反応管と前記筒部との間隙を区画して設けられたノズル配置室(222)と、
前記ノズル配置室内に配置され、前記処理室内に処理ガスを供給するガスノズル(340a-340c)と、
前記ノズル配置室と前記処理室とが連通するように前記筒部に形成されるガス供給口(235)と、
前記間隙と前記処理室とを連通させるように前記筒部に形成され、前記処理室内の雰囲気を前記間隙に排気するガス排気口(236,237)と、
前記反応管に接続され、前記間隙内の雰囲気を排気する排気部(230,231)と、を備える技術が提供される。
図7は、本実施形態における反応管203を用いてガスの流れを解析した結果を示す図である。図7に示されているように、ノズル340から供給されたガスは処理室201内のウエハ200間を通過して第1ガス排気口236、筒部209の裏側、第2ガス排気口237を経由して排気管231から排気されている。すなわち、第1ガス排気口236をウエハ200の下端側から上端側のウエハ領域にかけて形成することにより、ガスの通過断面積が大きくなるため、圧力損失を減らすことができることが確認された。
図9に示すように、比較例における反応管を用いた場合には、上下段のウエハ中心のガス速度分布は±8.07%となり、流速分布が均一にならなかった。すなわち、比較例では、圧力損失が生じてしまい、上段のウエハよりも下段のウエハの方が流速が大きくなってしまっていた。また、図10に示すように、上下段においてウエハ中心の原料分圧分布は±1.65%となり、上段のウエハが下段のウエハに比べて膜厚が厚くなってしまっていた。
Claims (14)
- 複数枚の基板を保持する基板保持具と、
反応管内部に設置され、前記基板保持具を収容して前記基板を処理する処理室を有する筒部と、
前記筒部に近接してその延伸方向に沿って配置され、前記処理室内に処理ガスを供給するガス供給部と、
前記ガス供給部と前記処理室とが連通するように形成されるガス供給口と、
前記反応管と前記筒部との間隙と、前記処理室とを連通させるように前記筒部に形成され、前記処理室内の雰囲気を前記間隙に排気するガス排気口と、
前記反応管に接続され、前記間隙内の雰囲気を排気する排気部と、を備える基板処理装置。 - 前記反応管は上端が閉塞され、前記排気部は、前記ガス排気口よりも下方の位置で前記反応管に接続される請求項1記載の基板処理装置。
- 前記筒部の前記ガス排気口よりも下方の位置に、前記処理室下方の雰囲気を排気する第2ガス排気口が形成される請求項2記載の基板処理装置。
- 前記ガス排気口から排気されたガスは、前記筒部裏の前記間隙を経由して前記排気部から前記反応管外に排気される請求項3記載の基板処理装置。
- 前記筒部は上端が閉塞されている請求項4記載の基板処理装置。
- 前記ガス排気口及び前記前記排気部は、前記筒部の中心からみて、前記ガス供給口とは反対側に設けられる請求項2記載の基板処理装置。
- 前記ガス供給部は、前記間隙を区画して設けられたバッファ室を有し、前記ガス供給口は、前記バッファ室の内周側の壁である前記筒部に設けられる請求項6記載の基板処理装置。
- 前記ガス供給部は、前記ノズル配置室内に配置され、前記処理室内に処理ガスを供給するガスノズルを有する請求項7記載の基板処理装置。
- 前記ガス供給孔は、前記ガス排気口と対面する位置に設けられる請求項8記載の基板処理装置。
- 前記ノズル配置室を除く前記間隙の全体を使って前記処理室内の雰囲気を前記ガス排気口から前記排気部へ排気することで、所定の直径の前記反応管に対して、前記ガス排気口と前記排気部との間の圧力損失を最小化した請求項7記載の基板処理装置。
- 前記間隙に不活性ガスを供給するガスノズルを前記筒部裏の前記間隙に設置する請求項7記載の装置。
- 基板処理装置で用いられる反応管であって、
反応管内部に設置され、複数の基板を保持する基板保持具を収容して前記基板を処理する処理室を有する筒部と、
前記反応管と前記筒部との間隙を区画して設けられ、前記処理室内に処理ガスを供給するガスノズルを配置するノズル配置室と、
前記ノズル配置室と前記処理室とが連通するように前記筒部に形成されるガス供給口と、
前記間隙と前記処理室とを連通させるように前記筒部に形成され、前記処理室内の雰囲気を前記間隙に排気するガス排気口と、
前記反応管に形成され、前記間隙内の雰囲気を排気する排気部に接続される排気口と、を備える反応管。 - 反応管内部に設置される筒部内の処理室内に複数枚の基板を保持する基板保持具を搬送する工程と、
前記反応管と前記筒部との間隙を区画して設けられたノズル配置室内に配置されたガスノズルから前記ノズル配置室と前記処理室とが連通するように前記筒部に形成されるガス供給口を介して前記処理室内に処理ガスを供給する工程と、
前記間隙と前記処理室とを連通させるように前記筒部に形成されるガス排気口から前記処理室内の雰囲気を前記間隙に排気し、前記間隙に排気された前記雰囲気を前記反応管に接続される排気部から前記反応管外に排気する工程と、を備える半導体装置の製造方法。 - 基板処理装置の反応管内部に設置される筒部内の処理室内に複数枚の基板を保持する基板保持具を搬送する手順と、
前記反応管と前記筒部との間隙を区画して設けられたノズル配置室内に配置されたガスノズルから前記ノズル配置室と前記処理室とが連通するように前記筒部に形成されるガス供給口を介して前記処理室内に処理ガスを供給する手順と、
前記間隙と前記処理室とを連通させるように前記筒部に形成されるガス排気口から前記処理室内の雰囲気を前記間隙に排気し、前記間隙に排気された前記雰囲気を前記反応管に接続される排気部から前記反応管外に排気する手順と、をコンピュータによって前記基板処理装置に実行させるプログラム。
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