WO2019180905A1 - 基板処理装置、半導体装置の製造方法およびプログラム - Google Patents
基板処理装置、半導体装置の製造方法およびプログラム Download PDFInfo
- Publication number
- WO2019180905A1 WO2019180905A1 PCT/JP2018/011625 JP2018011625W WO2019180905A1 WO 2019180905 A1 WO2019180905 A1 WO 2019180905A1 JP 2018011625 W JP2018011625 W JP 2018011625W WO 2019180905 A1 WO2019180905 A1 WO 2019180905A1
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- WIPO (PCT)
- Prior art keywords
- gas supply
- dummy wafer
- gas
- wafer support
- nozzle
- Prior art date
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
Definitions
- the present invention relates to a substrate processing apparatus, a semiconductor device manufacturing method, and a program.
- a process of forming a film on a substrate using a plurality of nozzles may be performed (see, for example, Patent Documents 1 to 4).
- An object of the present invention is to provide a technique capable of improving the uniformity of a film formed on a substrate within a substrate surface and between the surfaces.
- a product wafer support region that supports a plurality of product wafers with patterns arranged in an array, an upper dummy wafer support region that can support a dummy wafer above the product wafer support region, and a lower portion of the product wafer support region
- a substrate holder having a lower dummy wafer support area capable of supporting the dummy wafer on the side;
- a processing chamber for accommodating the substrate holder; First to third gas supply units for supplying gas into the processing chamber; An exhaust part for exhausting the atmosphere of the processing chamber,
- the first and third gas supply units each have a tubular nozzle extending in the vertical direction along the substrate holder and having a plurality of gas supply holes formed therein.
- the upper end of the gas supply hole formed at the uppermost portion of the nozzle is disposed corresponding to the uppermost dummy wafer supported by the upper dummy wafer support region, and The lower end of the gas supply hole formed at the lowermost position is arranged corresponding to the lowermost dummy wafer supported by the lower dummy wafer support area,
- the second gas supply unit has a tubular nozzle that extends in the vertical direction along the substrate holder and has a gas supply port formed of a plurality of gas supply holes or slit-shaped openings, A technique is provided in which the gas supply port is configured to open at least toward the product wafer support region.
- FIG. 1 is a cross-sectional view around the nozzle according to an embodiment of the present invention
- FIG. 2 is for explaining the positional relationship between the nozzle according to Modification 2 and the substrate held by the substrate holder.
- FIG. (A) is a cross-sectional view around the nozzle according to Modification 3, and (B) is for explaining the positional relationship between the nozzle according to Modification 3 and the substrate held by the substrate holder.
- FIG. (A) is a figure for demonstrating the positional relationship of the nozzle which concerns on a comparative example, and the board
- (B) is the nozzle concerning an Example, and a board
- (A) is a figure which shows the simulation result which shows the density
- (A), (B) is (A). It is a figure which shows the film thickness distribution between the surface inner surfaces of this product wafer.
- (A) is a figure which shows the simulation result which shows the density
- the substrate processing apparatus in the present invention is configured as an example of a semiconductor manufacturing apparatus used for manufacturing a semiconductor device.
- the processing furnace 202 has a heater 207 as heating means (heating mechanism).
- the heater 207 has a cylindrical shape and is vertically installed by being supported by a heater base (not shown) as a holding plate.
- the heater 207 also functions as an activation mechanism (excitation unit) that activates (excites) the processing gas with heat.
- a reaction tube 203 having a single tube structure that constitutes a reaction vessel (processing vessel) coaxially with the heater 207 is disposed.
- the reaction tube 203 is formed in the shape of a ceiling with a lower end opened by a heat resistant material such as quartz (SiO 2 ) or silicon carbide (SiC), and the upper end is closed by a flat wall body. Yes.
- the side wall of the reaction tube 203 includes a cylindrical portion 209 formed in a cylindrical shape, and a gas supply area (buffer) 222 and a gas exhaust area 224 provided on the outer wall of the cylindrical portion 209.
- a processing chamber 201 is formed inside the cylindrical portion 209 of the reaction tube 203.
- the processing chamber 201 is configured to be able to process the wafer 200 as a substrate at a high temperature and under reduced pressure. Further, the processing chamber 201 is configured to accommodate a boat 217 as a substrate holder that can hold the wafers 200 in a state where the wafers 200 are arranged in a plurality of stages in a vertical orientation in a horizontal posture.
- the gas supply area 222 is formed so as to protrude to the outside of one side wall of the cylindrical portion 209.
- the outer wall of the gas supply area 222 is connected to the outer wall of the cylindrical portion 209 and is larger than the outer diameter of the cylindrical portion 209 and is formed concentrically with the cylindrical portion 209.
- the gas supply area 222 has a lower end opened and an upper end closed by a flat wall.
- the gas supply area 222 accommodates nozzles 304a to 304c described later along the length direction (vertical direction).
- the boundary wall 252 is one side wall of the cylindrical portion 209 and forms a boundary between the gas supply area 222 and the cylindrical portion 209.
- the gas supply slit 235 opens on the boundary wall 252 and connects the inside of the gas supply area 222 and the processing chamber 201.
- three gas supply slits 235 are arranged in the circumferential direction so that each section of the gas supply area 222 communicates with the processing chamber 201 separately, and correspond to each surface (upper surface) of the wafer 200.
- As a plurality of openings the same number as the wafers 200 are arranged in the longitudinal direction.
- a gas exhaust area 224 is formed on the other side wall facing the one side wall where the gas supply area 222 of the cylindrical portion 209 is formed so as to protrude outward.
- the gas exhaust area 224 is disposed so as to sandwich an area where the wafer 200 of the processing chamber 201 is accommodated between the gas exhaust area 224 and the gas supply area 222.
- the outer wall of the gas exhaust area 224 is larger than the outer diameter of the cylindrical portion 209 and formed concentrically with the cylindrical portion 209 outside the other side wall as a part of the outer wall of the cylindrical portion 209.
- the gas exhaust area 224 is closed with a flat wall at the lower end and the upper end.
- the boundary wall 254 is a part of the cylindrical portion 209, and an outer side surface thereof constitutes a side surface portion facing the gas exhaust area 224.
- the lower end of the reaction tube 203 is supported by a cylindrical manifold 226.
- the manifold 226 is formed of a metal such as nickel alloy or stainless steel, or is formed of a heat resistant material such as quartz (SiO 2 ) or silicon carbide (SiC).
- a flange is formed at the upper end portion of the manifold 226, and the lower end portion of the reaction tube 203 is installed and supported on the flange.
- An airtight member 220 such as an O-ring is interposed between the flange and the lower end portion of the reaction tube 203 to keep the inside of the reaction tube 203 airtight.
- a seal cap 219 is attached to the opening at the lower end of the manifold 226 through an airtight member 220 such as an O-ring, so that the opening at the lower end of the reaction tube 203, that is, the opening of the manifold 226 is airtight. It is supposed to close.
- the seal cap 219 is formed in a disk shape from a metal such as nickel alloy or stainless steel.
- the seal cap 219 may be configured to cover its inner surface with a heat resistant material such as quartz (SiO 2 ) or silicon carbide (SiC).
- a boat support 218 that supports the boat 217 is provided on the seal cap 219.
- the boat support 218 is made of a heat-resistant material such as quartz or silicon carbide, and functions as a heat insulating portion and is a support that supports the boat.
- the boat 217 is erected on the boat support 218.
- the boat 217 is made of a heat resistant material such as quartz or silicon carbide.
- the boat 217 has a bottom plate fixed to a boat support (not shown) and a top plate arranged above the bottom plate, and has a configuration in which a plurality of columns are installed between the bottom plate and the top plate. Yes. A plurality of wafers 200 are held on the boat 217.
- the plurality of wafers 200 are loaded in multiple stages in the tube axis direction of the reaction tube 203 in a state where the wafers 200 are kept in a horizontal posture while being spaced apart from each other at the center, and are supported on the support column of the boat 217.
- a boat rotation mechanism 267 for rotating the boat is provided on the side of the seal cap 219 opposite to the processing chamber 201.
- the rotation shaft 265 of the boat rotation mechanism 267 passes through the seal cap 219 and is connected to the boat support base 218.
- the boat rotation mechanism 267 rotates the boat 217 via the boat support base 218 to rotate the wafer 200.
- the seal cap 219 is moved up and down in the vertical direction by a boat elevator 115 as an elevating mechanism provided outside the reaction tube 203, so that the boat 217 can be carried into and out of the processing chamber 201.
- nozzle support portions 350a to 350c that support the nozzles (injectors) 304a to 304c are installed so as to be bent in an L shape and penetrate the manifold 226.
- three nozzle support portions 350a to 350c are installed.
- the nozzle support portions 350a to 350c are made of a material such as nickel alloy or stainless steel.
- Gas supply pipes 310a to 310c for supplying gas into the reaction tube 203 are connected to one ends of the nozzle support portions 350a to 350c, respectively.
- nozzles 304a to 304c are connected to the other ends of the nozzle support portions 350a to 350c, respectively.
- the nozzles 304a to 304c are made of a heat resistant material such as quartz or SiC.
- inner walls 248 and 250 that divide each internal space into a plurality of spaces are formed inside the gas supply area 222 and the gas exhaust area 224.
- the gas supply area 222 and the inner walls 248 and 250 are made of the same material as the reaction tube 203, and are made of a heat resistant material such as quartz (SiO 2 ) or silicon carbide (SiC).
- quartz SiO 2
- SiC silicon carbide
- the two inner walls 248 that divide the gas supply area 222 are provided so as to divide the gas supply area 222 from the lower end side to the upper end side to form three isolated spaces.
- nozzles 304a to 304c are respectively installed in each space of the gas supply area 222. Since the nozzles 304a to 304c are installed in independent spaces by the inner wall 248, it is possible to prevent the processing gases supplied from the nozzles 304a to 304c from being mixed in the gas supply area 222. With such a configuration, it is possible to prevent the processing gas from being mixed in the gas supply area 222 to form a thin film or to generate a by-product.
- the inner wall 248 may be provided so as to partition the gas supply area 222 from the lower end to the upper end and form three isolated spaces.
- the two inner walls 250 that define the inside of the gas exhaust area 224 are provided so as to partition the gas exhaust area 224 in the same manner as the inner wall 248.
- the inner wall 250 partitions the gas exhaust area 224 from the vicinity of the upper end to the vicinity of the exhaust outlet 230 (described later).
- the outer diameters of the outer walls of the gas supply area 222 and the gas exhaust area 224 are the same, it is possible to suppress the distortion of the reaction tube 203 and reduce the dead space between the heater 207 and the like. There is.
- the gas flow passage cross-sectional areas of the gas supply area 222 and the gas exhaust area 224 are the same area.
- the cross-sectional area of the gas in each space in the gas supply area 222 and the cross-sectional area of the gas in each space in the gas exhaust area 224 facing each space in the gas supply area 222 are Same area.
- the gas exhaust slit 236 is formed in the same manner as the gas supply slit 235.
- a raw material for example, a halosilane-based gas containing Si and a halogen element as predetermined elements (main elements) constituting the film is a gas supply source as a second gas supply source.
- the source gas is a thermally decomposable source gas, which is a gaseous source material, for example, a gas obtained by vaporizing a source material that is in a liquid state under normal temperature and normal pressure, or a gaseous state under normal temperature and normal pressure. It is a raw material.
- a halosilane is a silane having a halogen group. That is, the halogen group includes halogen elements such as chlorine (Cl), fluorine (F), bromine (Br), iodine (I) and the like.
- the halosilane-based gas for example, a source gas containing Si and Cl, that is, a chlorosilane-based gas can be used.
- the chlorosilane-based gas acts as a Si source.
- the chlorosilane-based gas for example, hexachlorodisilane (Si 2 Cl 6 , abbreviation: HCDS) gas can be used.
- a reactant (reactant) having a chemical structure (molecular structure) different from that of the raw material for example, a hydrogen nitride-based gas that is a nitriding gas as a nitrogen (N) -containing gas is supplied to the gas supply source 360a, The gas is supplied into the processing chamber 201 through the MFC 320a, the valve 330a, and the nozzle 304a.
- the hydrogen nitride-based gas acts as an N source.
- ammonia (NH 3 ) gas can be used as the hydrogen nitride-based gas.
- nitrogen (N 2 ) gas is used as a gas supply source 360d, a gas supply source 360e, and a third gas supply source as a first gas supply source, respectively.
- Gas supply source 360f, MFCs 320d to 320f, valves 330d to 330f, gas supply pipes 310a to 310c, and nozzles 304a to 304c are supplied into the processing chamber 201.
- the N 2 gas acts as a purge gas, carrier gas, dilution gas, etc., and further acts as a film thickness distribution control gas for controlling the in-plane film thickness distribution of the film formed on the wafer 200.
- the gas supply pipe 310a, the MFC 320a, the valve 330a, and the nozzle 304a constitute a first process gas supply system as a reactant supply system.
- a gas supply source 360a may be included in the first processing gas supply system.
- a second processing gas supply system as a raw material supply system is mainly configured by the gas supply pipe 310b, the MFC 320b, the valve 330b, and the nozzle 304b.
- a gas supply source 360b may be included in the second processing gas supply system.
- a third processing gas supply system as a reactant supply system is mainly configured by the gas supply pipe 310c, the MFC 320c, the valve 330c, and the nozzle 304c.
- a gas supply source 360c may be included in the third processing gas supply system. Further, an inert gas supply system is mainly configured by the gas supply pipes 310a to 310f, the MFCs 320d to 320f, the valves 330d to 330f, and the nozzles 304a to 304c. Gas supply sources 360d to 360f may be included in the inert gas supply system.
- An exhaust port 230 is provided below the gas exhaust area 224.
- the exhaust port 230 is connected to the exhaust pipe 231.
- the exhaust pipe 231 is evacuated via a pressure sensor 245 as a pressure detector (pressure detection unit) for detecting the pressure in the processing chamber 201 and an APC (Auto Pressure Controller) valve 244 as a pressure regulator (pressure adjustment unit).
- a vacuum pump 246 serving as an exhaust device is connected, and the processing chamber 201 can be evacuated so that the pressure in the processing chamber 201 becomes a predetermined pressure (degree of vacuum).
- the exhaust pipe 231 on the downstream side of the vacuum pump 246 is connected to a waste gas treatment device (not shown) or the like.
- the APC valve 244 can open and close the valve to stop evacuation / evacuation in the processing chamber 201, and further adjust the valve opening to adjust conductance to adjust the pressure in the processing chamber 201. It is an open / close valve.
- An exhaust system as an exhaust unit is mainly configured by the exhaust pipe 231, the APC valve 244, and the pressure sensor 245.
- a vacuum pump 246 may also be included in the exhaust system.
- a temperature sensor (not shown) as a temperature detector is installed in the reaction tube 203, and the temperature in the processing chamber 201 is adjusted by adjusting the power supplied to the heater 207 based on the temperature information detected by the temperature sensor. Is configured to have a desired temperature distribution.
- the controller 280 which is a control unit (control means), is configured as a computer including a CPU (Central Processing Unit) 121a, a RAM (Random Access Memory) 121b, a storage device 121c, and an I / O port 121d.
- the RAM 121b, the storage device 121c, and the I / O port 121d are configured to exchange data with the CPU 121a via the internal bus 121e.
- an input / output device 122 configured as a touch panel or the like is connected to the controller 280.
- the storage device 121c includes, for example, a flash memory, a HDD (Hard Disk Drive), and the like.
- a control program that controls the operation of the substrate processing apparatus, a process recipe that describes the procedure and conditions of the substrate processing described later, and the like are stored in a readable manner.
- the process recipe is a combination of procedures for causing the controller 280 to execute each procedure in the substrate processing described later and obtaining a predetermined result, and functions as a program.
- process recipes, control programs, and the like are collectively referred to simply as programs.
- the process recipe is also simply called a recipe.
- program When the term “program” is used in this specification, it may include only a recipe, only a control program, or both.
- the RAM 121b is configured as a memory area (work area) in which programs, data, and the like read by the CPU 121a are temporarily stored.
- the I / O port 121d is connected to the above-described MFCs 320a to 320f, valves 330a to 330f, pressure sensor 245, APC valve 244, vacuum pump 246, heater 207, boat rotation mechanism 267, boat elevator 115, and the like.
- the CPU 121a is configured to read out and execute a control program from the storage device 121c and to read a recipe from the storage device 121c in response to an operation command input from the input / output device 122 or the like.
- the CPU 121a adjusts the flow rates of various gases by the MFCs 320a to 320f, the opening and closing operations of the valves 330a to 330f, the opening and closing operations of the APC valve 244, and the pressure adjustment by the APC valve 244 based on the pressure sensor 245 so as to follow the contents of the read recipe.
- the controller 280 can be configured by installing the above-described program stored in the external storage device 123 in a computer.
- the external storage device 123 includes, for example, a magnetic disk such as an HDD, an optical disk such as a CD, a magneto-optical disk such as an MO, and a semiconductor memory such as a USB memory.
- the storage device 121c and the external storage device 123 are configured as computer-readable recording media. Hereinafter, these are collectively referred to simply as a recording medium. When the term “recording medium” is used in this specification, it may include only the storage device 121c alone, may include only the external storage device 123 alone, or may include both of them.
- the program may be provided to the computer using a communication means such as the Internet or a dedicated line without using the external storage device 123.
- the boat 217 is accommodated in the processing chamber 201 while being supported by the boat support base 218, and the nozzles 304 a to 304. Gas supply is performed to the wafer 200 accommodated in the processing chamber 201 by 304c.
- a vertical processing furnace as an example of a semiconductor manufacturing apparatus loads dummy wafers on the upper side and the lower side of a boat 217 that holds wafers 200 in order to equalize the temperature of the wafers arranged in the height direction.
- the film to be grown is made uniform.
- the dummy wafer is usually a flat flat wafer
- the surface area is different from that of a product wafer which is a product wafer on which a pattern is formed.
- product wafers have a surface area of 50 times or 100 times that of flat wafers, and are increasing year by year.
- the larger the surface area the greater the consumption of the deposition gas.
- the source gas consumed on the dummy wafer and the product wafer is loaded into the dummy wafer support area, which is the area where the dummy wafer is loaded, and the product wafer is loaded. It differs from the product wafer support area, which is the area to be processed. For this reason, if the same amount of raw material is supplied to the wafers stacked in the height direction, there will be places where the raw material is left over and shortage, and this will cause a difference in the raw material concentration between the wafer surfaces. This makes it difficult to make the film uniform.
- the uniformity between the substrate surface inner surfaces of films formed on the product wafer is improved.
- the processing chamber 201 has a cylindrical shape with an inner diameter of 104 to 108% of the diameter of the largest wafer 200 that can be accommodated.
- the nozzles 304a to 304c are housed in a state of being isolated from each other in a gas supply area 222 formed by projecting a part of the side portion of the processing chamber 201 outward.
- the structure of the nozzles 304a to 304c for supplying a plurality of types of gases into the processing chamber 201 will be described with reference to FIGS. 4 (A) and 4 (B).
- the nozzle 304a, the nozzle 304b, and the nozzle 304c are used as a first gas supply unit, a second gas supply unit, and a third gas supply unit, respectively.
- FIG. 4A is a cross-sectional view of the periphery of the nozzles 304a to 304c in the product wafer support region in which the product wafer 200a in the gas supply area 222 is held
- FIG. 4B illustrates the nozzles 304a to 304c
- 6 is a diagram for explaining a positional relationship with wafers 200 stacked in multiple stages on a boat 217.
- the boat 217 includes a product wafer support region that supports a plurality of product wafers 200a stacked, an upper dummy wafer support region that can support the dummy wafer 200b above the product wafer support region, and a lower side of the product wafer support region. And a lower dummy wafer support area capable of supporting the dummy wafer 200b.
- the product wafer 200a is a product wafer on which a pattern is formed
- the dummy wafer 200b is a flat wafer on which no pattern is formed. That is, a plurality of dummy wafers 200b are stacked and supported on the upper side and the lower side of the stacked product wafers 200a.
- the number of wafers that can be supported in the product wafer support area can be set to an integral multiple of the number of wafer containers (25 sheets) such as FOUP.
- the nozzles 304a to 304c are provided from the lower part to the upper part in the gas supply area 222 along the length direction (vertical direction). That is, the nozzles 304a to 304c are each configured as a straight tube-type tube-shaped (tubular) long nozzle that extends only one in the vertical direction along the boat 217 accommodated in the processing chamber 201.
- the nozzles 304a to 304c are arranged in the order of the nozzle 304a, the nozzle 304b, and the nozzle 304c in the gas supply area 222 near the outer periphery of the processing chamber 201. That is, the nozzles 304a and 304c for supplying the inert gas or the nitriding gas are arranged on both sides of the nozzle 304b for supplying the source gas or the inert gas. That is, the nozzle 304b for supplying the source gas is disposed in the center, and the nozzles 304a and 304c for supplying the inert gas or the nitriding gas are disposed so as to sandwich the nozzle 304b.
- the nozzle 304a has a lower end connected to the gas supply pipe 310a in a state where fluid can flow from the gas supply sources 360a and 360d.
- the nozzle 304b has a lower end connected to the gas supply pipe 310b in a state where fluid can flow from the gas supply sources 360b and 360e.
- the nozzle 304c is connected to the gas supply pipe 310c in a state where the lower end of the nozzle 304c can circulate fluid from the gas supply sources 360c and 360f.
- a plurality of gas supply holes 232a and 232c for supplying gas are formed on the side surfaces of the nozzles 304a and 304c, respectively.
- the plurality of gas supply holes 232a and 232c are pinhole-shaped small circular holes, and among these, the upper ends of the gas supply holes 232a and 232c formed at the uppermost positions of the nozzles 304a and 304c are the upper dummy wafer support region.
- the lower ends of the gas supply holes 232a and 232c formed at the lowermost positions of the nozzles 304a and 304c are respectively supported by the lower dummy wafer support area. It is arranged corresponding to the lower dummy wafer 200b.
- the nozzles 304a and 304c are formed with a plurality of gas supply holes 232a and 232c in the upper dummy wafer region, the product wafer region, and the lower dummy wafer region, respectively.
- the gas supply holes 232a and 232c can be formed at predetermined intervals so as to correspond to the respective surfaces (upper surfaces) of all the wafers 200 including the dummy wafer 200b or the openings of the gas supply slits 235.
- a plurality of gas supply holes 232b as gas supply ports for supplying gas are formed on the side surface of the nozzle 304b.
- the upper end of the gas supply hole 232b formed at the uppermost position of the nozzle 304b is disposed at a position lower than the lowermost dummy wafer 200b supported by the upper dummy wafer support area.
- the lower end of the gas supply hole 232b formed at the lowermost position of the nozzle 304b is disposed at a position higher than the uppermost dummy wafer 200b supported by the lower dummy wafer support area.
- a plurality of gas supply holes 232b are formed only in the product wafer support region, and no gas supply holes 232b are formed in the upper dummy wafer support region and the lower dummy wafer support region.
- the opening area of the gas supply hole 232b formed in the side surface of the nozzle 304b is reduced so as not to supply the source gas to the dummy wafer support region.
- the gas supply holes 232a to 232c are opened so as to face the center of the reaction tube 203, respectively.
- a substrate processing sequence example in which a film is formed on a wafer 200 as a substrate will be described as one step of a semiconductor device manufacturing process using the substrate processing apparatus described above.
- the operation of each part constituting the substrate processing apparatus is controlled by the controller 280.
- the wafer 200 is a product wafer 200a having a pattern with a large surface area with a concavo-convex structure formed on the surface, and using the substrate processing apparatus described above, Si source gas and An example of forming a silicon nitride film (Si 3 N 4 film) by supplying a nitriding gas will be described.
- the product wafer 200a will be described as the wafer 200.
- wafer When the term “wafer” is used in this specification, it may mean the wafer itself or a laminate of the wafer and a predetermined layer or film formed on the surface thereof.
- wafer surface When the term “wafer surface” is used in this specification, it may mean the surface of the wafer itself, or may mean the surface of a predetermined layer or the like formed on the wafer.
- the phrase “form a predetermined layer on the wafer” means that the predetermined layer is directly formed on the surface of the wafer itself, a layer formed on the wafer, etc. It may mean that a predetermined layer is formed on the substrate.
- substrate is also synonymous with the term “wafer”.
- Vacuum exhaust (reduced pressure) is performed by the vacuum pump 246 so that the processing chamber 201, that is, the space where the wafer 200 exists, has a desired pressure (degree of vacuum).
- the pressure in the processing chamber 201 is measured by the pressure sensor 245, and the APC valve 244 is feedback-controlled based on the measured pressure information.
- the wafer 200 in the processing chamber 201 is heated by the heater 207 so as to have a desired film formation temperature.
- the power supply to the heater 207 is feedback-controlled based on the temperature information detected by the temperature sensor so that the processing chamber 201 has a desired temperature distribution.
- the rotation of the wafer 200 by the rotation mechanism 267 is started.
- the exhaust in the processing chamber 201 and the heating and rotation of the wafer 200 are all continuously performed at least until the processing on the wafer 200 is completed.
- Step A HCDS gas is supplied to the wafer 200 in the processing chamber 201.
- the valve 330b is opened and HCDS gas is allowed to flow into the gas supply pipe 310b.
- the flow rate of the HCDS gas is adjusted by the MFC 320b, supplied into the processing chamber 201 through the nozzle 304b, and exhausted from the exhaust port 230.
- N 2 gas as an inert gas is supplied to the wafer 200 in the processing chamber 201 from the nozzles 304a and 304c on both sides of the nozzle 304b.
- the valves 330d and 330f are opened, and N 2 gas is allowed to flow into the gas supply pipes 310a and 310c.
- the flow rate of the N 2 gas is adjusted by the MFCs 320d and 320f, supplied into the processing chamber 201 through the nozzles 304a and 304c, and exhausted from the exhaust port 230. That is, HCDS gas and N 2 gas are supplied to the wafer 200.
- HCDS gas supply flow rate 0.001 to 2 slm (Standard Liters Per Minute), preferably 0.01 to 1 slm N 2 gas supply flow rate (per gas supply pipe): 0.5-5 slm
- Gas supply time 0.1 to 120 seconds, preferably 1 to 60 seconds
- Processing temperature 250 to 800 ° C., preferably 400 to 700 ° C.
- Processing pressure 1 to 2666 Pa, preferably 67 to 1333 Pa Is exemplified.
- a Si-containing layer containing Cl is formed as the first layer on the outermost surface of the wafer 200.
- the valve 330b is closed and the supply of HCDS gas into the processing chamber 201 is stopped. Then, the inside of the processing chamber 201 is evacuated, and the gas remaining in the processing chamber 201 is removed from the processing chamber 201. At this time, the valves 330d to 330f are opened, and N 2 gas is supplied into the processing chamber 201 through the nozzles 304a to 304c. The N 2 gas supplied from the nozzles 304a to 304c acts as a purge gas, whereby the inside of the processing chamber 201 is purged (purge step).
- the flow rate of the N 2 gas supplied from each of the nozzles 304a to 304c is set to a flow rate in the range of 0.1 to 2 slm, for example.
- Other processing conditions are the same as the processing conditions in step A described above.
- a rare gas such as Ar gas, He gas, Ne gas, or Xe gas can be used in addition to N 2 gas. This also applies to Step B described later.
- Step B After step A is completed, NH 3 gas is supplied to the wafer 200 in the processing chamber 201, that is, the first layer formed on the wafer 200. Specifically, the valves 330a and 330c are opened, and NH 3 gas is allowed to flow into the gas supply pipes 310a and 310c. The flow rate of NH 3 gas is adjusted by the MFCs 320a and 320c, supplied into the processing chamber 201 through the nozzles 304a and 304c, and exhausted from the exhaust port 230. At this time, NH 3 gas is supplied to the wafer 200. At this time, at least one of the valves 330d to 330f may be opened, and the N 2 gas may flow into the processing chamber 201 via at least one of the nozzles 304a to 304c.
- NH 3 gas supply flow rate 1 to 10 slm NH 3 gas supply time: 0.1 to 120 seconds, preferably 1 to 60 seconds
- Processing pressure 1 to 4000 Pa, preferably 1 to 3000 Pa Is exemplified.
- Other processing conditions are the same as the processing conditions in step A.
- the first layer formed on the wafer 200 is nitrided (modified).
- a second layer containing Si and N that is, a SiN layer is formed on the wafer 200.
- impurities such as Cl contained in the first layer constitute a gaseous substance containing at least Cl in the course of the reforming reaction of the first layer with NH 3 gas. Ejected from within 201.
- the second layer is a layer having less impurities such as Cl than the first layer.
- valves 330a and 330c are closed, and the supply of NH 3 gas into the processing chamber 201 is stopped. Then, the gas and the like remaining in the processing chamber 201 are removed from the processing chamber 201 by the same processing procedure and processing conditions as the purge step of Step A.
- a hydrogen nitride-based gas such as diazene (N 2 H 2 ) gas, hydrazine (N 2 H 4 ) gas, N 3 H 8 gas or the like can be used.
- a predetermined number of times (n times, where n is an integer of 1 or more), an SiN film having a predetermined composition and a predetermined thickness is formed on the wafer 200.
- the above cycle is preferably repeated multiple times. That is, the thickness of the second layer formed when the above cycle is performed once is made smaller than the desired thickness, and the thickness of the SiN film formed by stacking the second layers is the desired thickness.
- the above cycle is preferably repeated a plurality of times until the thickness is reached.
- N 2 gas as a purge gas is supplied from each of the nozzles 304 a to 304 c into the processing chamber 201 and exhausted from the exhaust port 230.
- the inside of the processing chamber 201 is purged, and the gas and reaction byproducts remaining in the processing chamber 201 are removed from the processing chamber 201 (after purge).
- the atmosphere in the processing chamber 201 is replaced with an inert gas (inert gas replacement), and the pressure in the processing chamber 201 is returned to normal pressure (return to atmospheric pressure).
- the seal cap 219 is lowered by the boat elevator 115 and the lower end of the manifold 226 is opened.
- the processed wafer 200 is unloaded from the lower end of the manifold 226 to the outside of the reaction tube 203 while being supported by the boat 217.
- the lower end opening of the manifold 226 is sealed by a shutter (not shown) via the O-ring 220 (shutter close).
- the processed wafer 200 is taken out of the reaction tube 203 and then taken out from the boat 217 (wafer discharge).
- Modification 1 As shown in FIG. 5, the gas supply area 222 in this modification is provided with three nozzles 304a to 304c so that a plurality of types of gases can be supplied into the processing chamber 201. Has been.
- the shape of the gas supply hole of the nozzle 304b for supplying the source gas is different from that of the nozzle in the above-described embodiment.
- a vertically long slit-shaped opening 332b as a gas supply port for supplying gas is formed on the side surface of the nozzle 304b.
- the upper end of the opening 332b of the nozzle 304b is disposed at a position lower than the lowermost dummy wafer 200b supported by the upper dummy wafer support region, and the lower end of the opening 332b is most supported by the lower dummy wafer support region. It is arranged at a position higher than the upper dummy wafer 200b. That is, in the nozzle 304b, the opening 332b is formed only in the product wafer support region, and is not formed in the upper dummy wafer support region and the lower dummy wafer support region.
- the raw material gas is supplied to the wafer 200 in the processing chamber 201 through the opening 332b of the nozzle 304b and arranged on both sides of the nozzle 304b.
- the inert gas is supplied through the gas supply holes 232a and 232c of the nozzles 304a and 304c.
- Modification 2 As shown in FIG. 6, three nozzles 404 a, 304 b, and 404 c are provided in the gas supply area 222 in this modification, so that a plurality of types of gases can be supplied into the processing chamber 201. It is configured. In the present modification, the shape of the nozzles arranged on both sides of the nozzle 304b that supplies the raw material gas is different from that in Modification 1 described above.
- the nozzles 404a, 304b, 404c are provided above the lower part in the gas supply area 222 and along the length direction (vertical direction).
- the nozzle 304b extends in the vertical direction along the boat 217 accommodated in the processing chamber 201, and is configured as an I-shaped tube-like (tubular) long nozzle.
- the nozzles 404a and 404c are perforated nozzles, each extending in the vertical direction along the boat 217 accommodated in the processing chamber 201, and configured as U-shaped and tubular (tubular) long nozzles. Yes.
- the nozzle 404a has a lower end in a state in which fluid can flow from the gas supply sources 360a and 360d, and a state in which fluid can flow through the rising pipe 404a-1 connected to the gas supply pipe 310a and the upper end of the rising pipe 404a-1. And a downcomer 404a-2 formed substantially parallel to the ascending tube 404a-1.
- the nozzle 304b has a lower end connected to the gas supply pipe 310b in a state where fluid can flow from the gas supply sources 360b and 360e.
- the nozzle 404c has a lower end in a state where fluid can flow from the gas supply sources 360c and 360f, and a state where the fluid can flow through the rising pipe 404c-1 connected to the gas supply pipe 310c and the upper end of the rising pipe 404c-1.
- descending pipes 404c-2 formed substantially parallel to the ascending pipes 404c-1.
- Gas supply holes 232a and 232c are provided on the side surfaces of the nozzles 404a and 404c, respectively.
- the upper dummy wafer support area and the lower dummy wafer support area of the ascending pipes 404a-1 and 404c-1, and A plurality of dummy wafer support areas, product wafer support areas, and lower dummy wafer support areas are formed. That is, the gas supply holes 232a and 232c in the dummy wafer region of the nozzles 404a and 404c for supplying the inert gas are increased as compared with the gas supply holes 232a and 232c of the nozzles 304a and 304c in the above-described embodiment and modification 1. As a result, the Si raw material concentration in the dummy wafer support region can be further reduced, and the film thickness uniformity within the wafer surface can be easily controlled.
- the upper ends of the gas supply holes 232a and 232c formed at the uppermost positions of the nozzles 404a and 404c are formed on the uppermost dummy wafer 200b supported by the upper dummy wafer support region.
- the lower ends of the gas supply holes 232a and 232c formed at the lowermost positions of the nozzles 404a and 404c are arranged corresponding to the lowermost dummy wafer 200b supported by the lower dummy wafer support area.
- the raw material gas is supplied to the wafer 200 in the processing chamber 201 through the opening 332b of the nozzle 304b and arranged on both sides of the nozzle 304b.
- the inert gas is supplied through the gas supply holes 232a and 232c of the nozzles 404a and 404c, respectively.
- a substantial opening area averaged in the longitudinal direction of the plurality of gas supply holes 232a and 232c disposed in the upper dummy wafer support region and the lower dummy wafer support region is disposed in the product wafer support region.
- the plurality of gas supply holes 232a and 232c are formed to be larger than a substantial opening area averaged in the longitudinal direction.
- the nozzles 404a and 404c are configured such that the opening widths averaged in the longitudinal direction of the gas supply holes 232a and 232c are 1% or less of the square root of the flow path cross-sectional area of the nozzles 404a and 404c.
- the opening width averaged in the nozzle longitudinal direction includes the meaning of the opening width of the continuous slit in the longitudinal direction having conductance equal to the conductance per unit length in the longitudinal direction such as the gas supply hole 232a.
- the opening width of the opening 332b of the nozzle 304b is configured to be 3% or more of the square root of the flow path area of the nozzle 304b.
- the opening 332b may be formed as a plurality of slits that are intermittently extended vertically by bridging both sides in the middle, instead of a single opening that is continuous from the upper end to the lower end due to demands on strength.
- Modification 3 In the gas supply area 222 in this modification, as shown in FIG. 7, three nozzles 304 a, 304 b, and 404 c are provided so that a plurality of types of gases can be supplied into the processing chamber 201. It is configured. In the present modification, the shape of the nozzle arranged on one side of the nozzle 304b that supplies the raw material gas is different from that in Modification 1 described above.
- the nozzles 304 a, 304 b, and 404 c are provided along the length direction (vertical direction) above the lower portion in the gas supply area 222.
- the nozzles 304a and 304b extend in the vertical direction along the boat 217 accommodated in the processing chamber 201, and are respectively configured as I-shaped and tube-like (tubular) long nozzles.
- the nozzle 404c extends in the vertical direction along the boat accommodated in the processing chamber 201, and is configured as a U-shaped, tubular (tubular) long nozzle.
- the nozzle 304a has a lower end connected to the gas supply pipe 310a in a state where fluid can flow from the gas supply sources 360a and 360d.
- the nozzle 304b has a lower end connected to the gas supply pipe 310b in a state where fluid can flow from the gas supply sources 360b and 360e.
- the nozzle 404c has a lower end in a state where fluid can flow from the gas supply sources 360c and 360f, and a state where the fluid can flow through the rising pipe 404c-1 connected to the gas supply pipe 310c and the upper end of the rising pipe 404c-1.
- descending pipes 404c-2 formed substantially parallel to the ascending pipes 404c-1.
- a plurality of gas supply holes 232c are formed in the upper dummy wafer support region, the product wafer support region, and the lower dummy wafer support region on the side surface of the downcomer 404c-2 of the nozzle 404c. Further, the gas supply hole 232c is not formed in the rising pipe 404c-1 of the nozzle 404c.
- the upper ends of the holes 232a and 232c are arranged corresponding to the uppermost dummy wafer 200b supported in the upper dummy wafer support area, and the gas formed at the lowermost positions of the down tubes 404c-2 of the nozzle 304a and the nozzle 404c, respectively.
- the lower ends of the supply holes 232a and 232c are respectively arranged so as to correspond to the lowermost dummy wafer 200b supported in the lower dummy wafer support region.
- the film quality of the formed film is improved.
- the purge gas (N 2 gas) effective for film thickness uniformity is supplied at a large flow rate of 2 to 10 slm, for example.
- the purge gas is supplied to the wafer 200 before it is sufficiently heated, and temperature unevenness occurs above and below the boat 217.
- the purge gas can be supplied to the wafer 200 after sufficiently warming it.
- the temperature at which NH 3 becomes a radical or a precursor is higher than that of HCDS.
- a predetermined temperature or higher is necessary for NH 3 to become a precursor, and it is desirable to keep NH 3 in the nozzle for a sufficient time if the processing temperature is to be lowered to the predetermined temperature.
- the increase in volume is also preferable for a hardly decomposable reactive gas.
- a nitriding gas such as NH 3 gas is supplied from the two nozzles 304a and 304c
- the present invention is not limited to such an aspect.
- the nitriding gas may be supplied from at least one of the nozzle 304a and the nozzle 304c.
- the present invention is limited to such an embodiment.
- the dummy wafer support region on the side surface of the nozzle 304b is compared with the total opening area of the gas supply holes 232a and 232c formed on the side surfaces of the nozzles 304a and 304c that supply the inert gas disposed on both sides of the nozzle 304b.
- the present invention can also be suitably applied to the case where the total opening area of the gas supply holes 232b or the openings 332b formed in the above is reduced.
- the present invention is limited to such an embodiment.
- the present invention can also be suitably applied when the total opening area of the holes 232a and 232c is increased.
- the present invention is not limited to such an embodiment. That is, the present invention can be suitably applied to the case where a film containing a metal element such as germanium (Ge) or boron (B) as a main element in addition to Si is formed on a substrate.
- the present invention also provides titanium (Ti), zirconium (Zr), hafnium (Hf), niobium (Nb), tantalum (Ta), molybdenum (Mo), tungsten (W), yttrium (Y), and lanthanum (La).
- the present invention can also be suitably applied to the case where a film containing a metal element such as strontium (Sr) or aluminum (Al) as a main element is formed on a substrate.
- titanium tetrachloride (TiCl 4 ) gas or trimethylaluminum (Al (CH 3 ) 3 , abbreviation: TMA) gas is used as a raw material, and a titanium nitride film (TiN film) is formed on the substrate by the following film forming sequence.
- TiCl 4 titanium tetrachloride
- Al (CH 3 ) 3 trimethylaluminum
- TMA trimethylaluminum
- TiN film titanium nitride film
- TiN film titanium oxide film
- TiCl 4 ⁇ NH 3 TiN
- TiCl 4 ⁇ NH 3 ⁇ O 2 TiON
- TiCl 4 ⁇ TMA ⁇ NH 3 TiAlCN
- TiCl 4 ⁇ TMA TiAlC
- TiCl 4 ⁇ TEA TiAlC
- TiCl 4 ⁇ H 2 O TiCl 4 ⁇ H 2 O
- the recipe used for the substrate processing is preferably prepared individually according to the processing content and stored in the storage device 121c via the telecommunication line or the external storage device 123. And when starting a process, it is preferable that CPU121a selects a suitable recipe suitably from the some recipe stored in the memory
- the above-described recipe is not limited to a case of newly creating, but may be prepared by changing an existing recipe that has already been installed in the substrate processing apparatus, for example.
- the changed recipe may be installed in the substrate processing apparatus via an electric communication line or a recording medium on which the recipe is recorded.
- an existing recipe that has already been installed in the substrate processing apparatus may be directly changed by operating the input / output device 122 provided in the existing substrate processing apparatus.
- processing procedure and processing conditions at this time can be the same as the processing procedure and processing conditions of the above-described embodiment, for example.
- the SiN film or the like formed by the method of the above-described embodiment or modification can be widely used as an insulating film, a spacer film, a mask film, a charge storage film, a stress control film, and the like.
- a strict requirement for in-plane film thickness uniformity for a film formed on a wafer there is a strict requirement for in-plane film thickness uniformity for a film formed on a wafer.
- the present invention capable of forming a film having a flat distribution on a patterned wafer having a high-density pattern formed on the surface thereof is considered to be very useful as a technique that meets this requirement.
- gas was supplied to the wafers 200 stacked in multiple stages on the boat 217 using the three nozzles 304a, 404b, and 404c shown in FIG.
- the flow rate of N 2 gas supplied from the nozzles 304a and 404c was set to 100 sccm, and the flow rate of HCDS gas supplied from the nozzle 404b was set to 480 sccm.
- An opening 432b for supplying HCDS gas to the upper dummy wafer support region, the product wafer support region, and the lower dummy wafer support region is formed on the side surface of the nozzle 404b.
- gas was supplied to the wafers 200 stacked in multiple stages on the boat 217 using the three nozzles 304a, 304b, and 404c shown in FIG.
- the flow rate of N 2 gas supplied from the nozzles 304a and 404c was set to 500 sccm, and the flow rate of HCDS gas supplied from the nozzle 304b was set to 480 sccm.
- FIG. 9A is a diagram showing a simulation result showing the concentration distribution of the Si raw material in the processing furnace 202 when the nozzle according to the comparative example shown in FIG. 8A is used, and FIG. These are figures which show the film thickness distribution between the surface inner surfaces of the product wafer of FIG. 9 (A).
- FIG. 10A is a diagram showing a simulation result showing the concentration distribution of the Si raw material in the processing furnace 202 when the nozzle according to the embodiment shown in FIG. 8B is used, and FIG. These are figures which show the film thickness distribution between the surface inner surfaces of the product wafer of FIG. 10 (A).
- shaft of FIG. 9 (B) and FIG. 10 (B) has shown the partial pressure [Pa] of Si raw material.
- the horizontal axis of FIG. 9B and FIG. 10B indicates the wafer number of the product wafer placed on the boat 217.
- the opening 432b is formed in the upper dummy wafer support region and the lower dummy wafer support region on the side surface of the nozzle 404b for supplying the source gas. Since it is formed, the source gas is uniformly supplied from the top to the bottom of the boat 217. However, since the dummy wafer supported on the dummy wafer support area is a flat wafer and the product wafer on which the pattern is formed is a structural wafer having a large surface area, the consumption amount of the source gas is different.
- the concentration (partial pressure) of the Si raw material existing in the processing chamber 201 is different between the upper and lower dummy wafer support regions and the product wafer support region.
- the amount of excess gas increases, so that the raw material concentration in the space increases, and in the product wafer support area, the raw material concentration decreases.
- a density difference occurs in the processing chamber 201, a density difference occurs between the area near the upper and lower dummy wafer support areas and the area far from the upper and lower dummy wafer support areas in the product wafer support area due to density diffusion. Therefore, the uniformity of the film formed on the product wafer is deteriorated.
- the partial pressure of the Si raw material to be supplied also depends on the position of the wafers stacked in the height direction of the boat 217.
- FIG. 10B when the nozzle according to this example is used, it can be confirmed that the uniformity between wafer surfaces is good. That is, according to the present embodiment, the uniformity of the Si raw material concentration supplied to the product wafer is improved.
- the concentration of the Si raw material becomes uniform with respect to the height direction of the wafers stacked on the boat 217 as compared with the case where the nozzle according to the comparative example is used. Can be confirmed. In particular, it can be confirmed that the Si concentration on the upper side and the lower side of the boat 217 can be lowered and the inter-surface uniformity is improved.
- FIG. 11 is a diagram showing a comparison of in-plane film thickness uniformity when a SiN film is formed on a product wafer using the nozzle according to the comparative example and the nozzle according to the example. It is the figure which compared and showed the uniformity between surfaces at the time of forming a SiN film on a product wafer using the nozzle which concerns on a comparative example, and the nozzle which concerns on an Example, respectively.
- the vertical axis in FIG. 11 indicates the wafer position.
- the horizontal axis in FIG. 11 indicates the in-plane uniformity [%] of the SiN film formed on the product wafer.
- the vertical axis in FIG. 12 indicates the wafer position.
- the horizontal axis of FIG. 12 indicates the film thickness [ ⁇ ] of the SiN film formed on the product wafer.
- the in-plane uniformity of the film formed using the nozzle according to the comparative example is about 4.5% at the center position of the boat 217, whereas The lower position was about 7.5%, and the upper position of the boat 217 was about 9.2%, which differed greatly depending on the height position of the wafer.
- the in-plane uniformity of the film formed using the nozzle according to the example was about 4%, and there was almost no difference in the height direction of the boat 217.
- the uniformity between the surfaces of the film formed using the nozzle according to the comparative example is about 7%, whereas the film formed using the nozzle according to the example is used. It was confirmed that the uniformity between surfaces of the film was about 2% and the uniformity between surfaces was also good.
- the thickness of the product wafer is uniform between the upper and lower surfaces in the height direction of the boat 217 from the upper side to the lower side.
- the film thickness was good, and a uniform film thickness could be obtained from the top to the bottom of the product wafers stacked on the boat 217 in multiple stages.
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Abstract
Description
パターンが形成された複数のプロダクトウエハを配列した状態で支持するプロダクトウエハ支持領域と、前記プロダクトウエハ支持領域の上方側にてダミーウエハを支持可能な上方ダミーウエハ支持領域と、前記プロダクトウエハ支持領域の下方側にてダミーウエハを支持可能な下方ダミーウエハ支持領域と、を有する基板保持具と、
前記基板保持具を収容する処理室と、
前記処理室の内部へガス供給を行う第1乃至第3のガス供給部と、
前記処理室の雰囲気を排気する排気部と、を備え、
前記第1及び第3のガス供給部は、それぞれ前記基板保持具に沿って上下方向に延伸し、複数のガス供給孔が形成された管状のノズルを有し、
前記複数のガス供給孔のうち、前記ノズルの最も上方に形成されたガス供給孔の上端が、前記上方ダミーウエハ支持領域で支持される最も上方のダミーウエハに対応させて配置されるともに、前記ノズルの最も下方に形成されたガス供給孔の下端が、前記下方ダミーウエハ支持領域で支持される最も下方のダミーウエハに対応させて配置され、
前記第2のガス供給部は、前記基板保持具に沿って上下方向に延伸し、複数のガス供給孔又はスリット状の開口部からなるガス供給口が形成された管状のノズルを有し、
前記ガス供給口は、少なくとも前記プロダクトウエハ支持領域に向かって開口するよう構成されている
技術が提供される。
以下、本発明の一実施形態について図1~図4を用いて説明する。本発明における基板処理装置は、半導体装置の製造に使用される半導体製造装置の一例として構成されているものである。
図1に示すように、処理炉202は加熱手段(加熱機構)としてのヒータ207を有する。ヒータ207は円筒形状であり、保持板としてのヒータベース(図示せず)に支持されることにより垂直に据え付けられている。ヒータ207は、処理ガスを熱で活性化(励起)させる活性化機構(励起部)としても機能する。
上述の基板処理装置を用い、半導体装置の製造工程の一工程として、基板としてのウエハ200上に膜を形成する基板処理シーケンス例、すなわち、成膜シーケンス例について説明する。以下の説明において、基板処理装置を構成する各部の動作はコントローラ280により制御される。
複数枚のウエハ200がボート217に装填(ウエハチャージ)されると、マニホールド226の下端開口が開放される。その後、図1に示すように、複数枚のウエハ200を支持したボート217は、ボートエレベータ115によって持ち上げられて処理室201内へ搬入(ボートロード)される。この状態で、シールキャップ219は、Oリング220を介してマニホールド226の下端をシールした状態となる。
処理室201内、すなわち、ウエハ200が存在する空間が所望の圧力(真空度)となるように、真空ポンプ246によって真空排気(減圧排気)される。この際、処理室201内の圧力は圧力センサ245で測定され、この測定された圧力情報に基づきAPCバルブ244がフィードバック制御される。また、処理室201内のウエハ200が所望の成膜温度となるように、ヒータ207によって加熱される。この際、処理室201内が所望の温度分布となるように、温度センサが検出した温度情報に基づきヒータ207への通電具合がフィードバック制御される。また、回転機構267によるウエハ200の回転を開始する。処理室201内の排気、ウエハ200の加熱および回転は、いずれも、少なくともウエハ200に対する処理が終了するまでの間は継続して行われる。
その後、次のステップA,Bを順次実行する。
このステップでは、処理室201内のウエハ200に対してHCDSガスを供給する。具体的には、バルブ330bを開き、ガス供給管310b内へHCDSガスを流す。HCDSガスは、MFC320bにより流量調整され、ノズル304bを介して処理室201内へ供給され、排気口230より排気される。このとき、ノズル304bの両側のノズル304a,304cから処理室201内のウエハ200に対して不活性ガスとしてのN2ガスを供給する。具体的には、バルブ330d,330fを開き、ガス供給管310a,310c内へN2ガスを流す。N2ガスは、MFC320d,320fによりそれぞれ流量調整され、ノズル304a,304cを介して処理室201内へ供給され、排気口230より排気される。すなわち、ウエハ200に対してHCDSガスとN2ガスが供給される。
HCDSガス供給流量:0.001~2slm(Standard Liters Per Minute)、好ましくは0.01~1slm
N2ガス供給流量(ガス供給管毎):0.5~5slm
ガス供給時間:0.1~120秒、好ましくは1~60秒
処理温度:250~800℃、好ましくは400~700℃
処理圧力:1~2666Pa、好ましくは67~1333Pa
が例示される。
ステップAが終了した後、処理室201内のウエハ200、すなわち、ウエハ200上に形成された第1層に対してNH3ガスを供給する。具体的には、バルブ330a,330cを開き、ガス供給管310a,310c内へNH3ガスを流す。NH3ガスは、MFC320a,320cによりそれぞれ流量調整され、ノズル304a,304cを介して処理室201内へ供給され、排気口230より排気される。このとき、ウエハ200に対してNH3ガスが供給される。なお、このとき、バルブ330d~330fのうち少なくともいずれかを開き、ノズル304a~304cのうち少なくともいずれかを介して処理室201内へN2ガスを流すようにしてもよい。
NH3ガス供給流量:1~10slm
NH3ガス供給時間:0.1~120秒、好ましくは1~60秒
N2ガス供給流量(ガス供給管毎):0~2slm
処理圧力:1~4000Pa、好ましくは1~3000Pa
が例示される。他の処理条件は、ステップAにおける処理条件と同様な処理条件とする。
上述したステップA,Bを非同時に、すなわち、同期させることなく行うサイクルを所定回数(n回、nは1以上の整数)行うことにより、ウエハ200上に、所定組成および所定膜厚のSiN膜を形成することができる。上述のサイクルは、複数回繰り返すのが好ましい。すなわち、上述のサイクルを1回行う際に形成される第2層の厚さを所望の膜厚よりも薄くし、第2層を積層することで形成されるSiN膜の膜厚が所望の膜厚になるまで、上述のサイクルを複数回繰り返すのが好ましい。
成膜ステップが終了した後、ノズル304a~304cのそれぞれからパージガスとしてのN2ガスを処理室201内へ供給し、排気口230から排気する。これにより、処理室201内がパージされ、処理室201内に残留するガスや反応副生成物が処理室201内から除去される(アフターパージ)。その後、処理室201内の雰囲気が不活性ガスに置換され(不活性ガス置換)、処理室201内の圧力が常圧に復帰される(大気圧復帰)。
ボートエレベータ115によりシールキャップ219が下降され、マニホールド226の下端が開口される。そして、処理済のウエハ200が、ボート217に支持された状態でマニホールド226の下端から反応管203の外部に搬出(ボートアンロード)される。ボートアンロードの後は、マニホールド226の下端開口がOリング220を介して不図示のシャッタによりシールされる(シャッタクローズ)。処理済のウエハ200は、反応管203の外部に搬出された後、ボート217より取り出される(ウエハディスチャージ)。
次に、本実施形態の変形例について図5~図7を用いて説明する。なお、これらの変形例は任意に組み合わせることができる。なお、特に説明がない限り、各変形例の各構成は、上述の実施形態における構成と同様とする。
本変形例におけるガス供給エリア222には、図5に示されるように、3本のノズル304a~304cが設けられており、処理室201内へ複数種類のガスを供給することができるように構成されている。本変形例では、上述した実施形態におけるノズルと原料ガスを供給するノズル304bのガス供給孔の形状が異なる。
本変形例におけるガス供給エリア222には、図6に示されるように、3本のノズル404a,304b,404cが設けられており、処理室201内へ複数種類のガスを供給することができるように構成されている。本変形例では、上述した変形例1と、原料ガスを供給するノズル304bの両側に配置されるノズルの形状が異なる。
本変形例におけるガス供給エリア222には、図7に示されるように、3本のノズル304a,304b,404cが設けられており、処理室201内へ複数種類のガスを供給することができるように構成されている。本変形例では、上述した変形例1と、原料ガスを供給するノズル304bの一方側に配置されるノズルの形状が異なる。
以上、本発明の実施形態を具体的に説明した。但し、本発明は上述の実施形態に限定されるものではなく、その要旨を逸脱しない範囲で種々変更可能である。
(TiCl4→NH3→O2)×n ⇒ TiON
(TiCl4→TMA→NH3)×n ⇒ TiAlCN
(TiCl4→TMA)×n ⇒ TiAlC
(TiCl4→TEA)×n ⇒ TiCN
(TiCl4→H2O)×n ⇒ TiO
以下、上述の実施形態及び変形例で得られる効果を裏付けるシミュレーション結果及び評価結果について図8~図12に基づいて説明する。
217 ボート(基板保持具)
304a,404a ノズル(第1のガス供給部)
304b ノズル(第2のガス供給部)
304c,404c ノズル(第3のガス供給部)
232a,232b,232c ガス供給孔
332b 開口部
Claims (15)
- パターンが形成された複数のプロダクトウエハを配列した状態で支持するプロダクトウエハ支持領域と、前記プロダクトウエハ支持領域の上方側にてダミーウエハを支持可能な上方ダミーウエハ支持領域と、前記プロダクトウエハ支持領域の下方側にてダミーウエハを支持可能な下方ダミーウエハ支持領域と、を有する基板保持具と、
前記基板保持具を収容する処理室と、
前記処理室の内部へガス供給を行う第1乃至第3のガス供給部と、
前記処理室の雰囲気を排気する排気部と、を備え、
前記第1及び第3のガス供給部は、それぞれ前記基板保持具に沿って上下方向に延伸し、複数のガス供給孔が形成された管状のノズルを有し、
前記複数のガス供給孔のうち、前記ノズルの最も上方に形成されたガス供給孔の上端が、前記上方ダミーウエハ支持領域で支持される最も上方のダミーウエハに対応させて配置されるともに、前記ノズルの最も下方に形成されたガス供給孔の下端が、前記下方ダミーウエハ支持領域で支持される最も下方のダミーウエハに対応させて配置され、
前記第2のガス供給部は、前記基板保持具に沿って上下方向に延伸し、複数のガス供給孔又はスリット状の開口部からなるガス供給口が形成された管状のノズルを有し、
前記ガス供給口は、少なくとも前記プロダクトウエハ支持領域に向かって開口する基板処理装置。 - 前記第1乃至第3のガス供給部は、第1、第2、第3の順で、前記処理室の外周付近に並んで配置され、前記処理室の下端付近において前記処理室の外に設けられた第1、第2、第3のガス供給系にそれぞれ流体が流通可能な状態で接続され、前記第1及び第3のガス供給系はパージガス又は不活性ガスを供給し、前記第2のガス供給系は熱分解性の原料ガスを供給する、請求項1に記載の基板処理装置。
- 前記第1及び第3のガス供給部の少なくとも一方は、前記ノズルが、下端が前記第1又は第3のガス供給系に流体が流通可能な状態で接続される上昇管と、前記上昇管の上端と流体が流通可能な状態で接続され、前記上昇管に略平行に形成される下降管と、を有して構成されるとともに、前記ガス供給孔は、少なくとも前記下降管に形成される、請求項2に記載の基板処理装置。
- 前記第1及び第3のガス供給部の少なくとも一方は、前記上方ダミーウエハ支持領域及び前記下方ダミーウエハ支持領域に配置される前記複数のガス供給孔の長手方向で平均した実質的な開口面積が、前記プロダクトウエハ支持領域に配置される前記複数のガス供給孔の長手方向で平均した実質的な開口面積に比べて大きくなるように形成されている、請求項1に記載の基板処理装置。
- 前記第1及び第3のガス供給部の少なくとも一方は、前記上方ダミーウエハ支持領域及び前記下方ダミーウエハ支持領域に対して、前記上昇管と前記下降管の両方に前記ガス供給孔が形成されるとともに、前記プロダクトウエハ支持領域に対して、前記下降管のみに前記ガス供給孔が形成される、請求項3に記載の基板処理装置。
- 前記第2のガス供給部が有する前記ガス供給口は、その上端が、前記上方ダミーウエハ支持領域で支持される最も下方のダミーウエハよりも低い位置に配置されるともに、その下端が、前記下方ダミーウエハ支持領域で支持される最も上方のダミーウエハよりも高い位置に配置された請求項1に基板処理装置。
- 前記第1及び第3のガス供給部の少なくとも1つがパージガス又は不活性ガスを供給するのと同時に、前記第2のガス供給部は前記第2のガス供給系から原料ガスを前記基板へ供給し、
前記第1及び第3のガス供給部の少なくとも1つは、対応するガス供給部に、前記第2のガス供給系が供給する原料ガスよりも熱分解若しくは活性化しにくい別の原料ガスを更に供給可能に構成され、前記第2のガス供給部が前記第2のガス供給系からの原料ガスを供給していないときに、前記対応するガス供給部は、前記別の原料ガスを前記基板へ供給する、請求項2に記載の基板処理装置。 - 前記第1及び第3のガス供給部が有する前記複数のガス供給孔は、前記プロダクトウエハ支持領域のプロダクトウエハと、前記上方及び下部ダミーウエハ支持領域のダミーウエハのそれぞれに対応して個別に設けられた開口である、請求項1に記載の基板処理装置。
- 前記第1及び第3のガス供給部が有する前記複数のガス供給孔は、複数の前記プロダクトウエハ若しくは前記ダミーウエハに亘って開口する複数の縦長のスリットである、請求項1に記載の基板処理装置。
- 第1及び第3のノズルは、長手方向に平均化された開口幅が、チューブの流路断面積の平方根の1%以下である開口を有し、第2のノズルは、前記開口幅が、前記平方根の3%以上である開口を有する、請求項1に記載の基板処理装置。
- 前記処理室は、収容可能な最大の前記プロダクトウエハの直径の104~108%の内径の円筒に構成され、前記第1乃至第3のノズルは、処理室の側部の一部を外側に張り出して形成された供給エリア内にそれぞれ隔離された状態で収容される請求項1に記載の基板処理装置。
- 前記円筒の側壁の一部であって、前記供給エリア内と前記処理室内との間の境界を構成する境界壁を更に備え、
前記境界壁には、前記処理ガスを前記円筒内に供給する周方向に長い前記ガス供給スリットが、前記第1乃至第3のノズルに対応するように円周方向に3個配列され、且つ、前記プロダクトウエハ及びダミーウエハに対応するように複数の開口として、高さ方向に前記プロダクトウエハ及びダミーウエハの合計と同数個配列される様態で、格子状に形成される請求項11に記載の基板処理装置。 - 前記第1及び第3のガス供給部が有する前記複数のガス供給孔は、前記ガス供給スリットとそれぞれ向かい合う位置に形成された、請求項12に記載の基板処理装置。
- パターンが形成された複数のプロダクトウエハを配列した状態で支持するプロダクトウエハ支持領域と、前記プロダクトウエハ支持領域の上方側にてダミーウエハを支持する上方ダミーウエハ支持領域と、前記プロダクトウエハ支持領域の下方側にてダミーウエハを支持する下方ダミーウエハ支持領域と、を有する基板保持具に対して、前記プロダクトウエハ支持領域に複数のプロダクトウエハを搭載するとともに、前記上方ダミーウエハ支持領域および前記下方ダミーウエハ支持領域のそれぞれにダミーウエハを搭載する工程と、
前記プロダクトウエハおよび前記ダミーウエハを搭載した前記基板保持具を、前記基板保持具を収容する処理室に搬入する工程と、
前記基板保持具に沿って上下方向に延伸し、複数のガス供給孔が形成されたチューブ状のノズルを有し、前記複数のガス供給孔のうち、前記ノズルの最も上方に形成されたガス供給孔の上端が、前記上方ダミーウエハ支持領域で支持される最も上方のダミーウエハに対応させて配置されるともに、前記ノズルの最も下方に形成されたガス供給孔の下端が、前記下方ダミーウエハ支持領域で支持される最も下方のダミーウエハに対応させて配置される第1及び第3のガス供給部の少なくとも1つから、パージガス又は不活性ガスを前記基板保持具へ供給する工程と、
前記基板保持具に沿って上下方向に一本のみ延伸し、複数のガス供給孔又はスリット状の開口部からなるガス供給口が形成されたチューブ状のノズルを有し、前記ガス供給口の上端が、前記上方ダミーウエハ支持領域で支持される最も下方のダミーウエハよりも低い位置に配置されるともに、前記ガス供給口の下端が、前記下方ダミーウエハ支持領域で支持される最も上方のダミーウエハよりも高い位置に配置された第2のガス供給部から、前記基板保持具への原料ガス供給を行って前記プロダクトウエハを処理する工程と、
を有する半導体装置の製造方法。 - パターンが形成された複数のプロダクトウエハを配列した状態で支持するプロダクトウエハ支持領域と、前記プロダクトウエハ支持領域の上方側にてダミーウエハを支持する上方ダミーウエハ支持領域と、前記プロダクトウエハ支持領域の下方側にてダミーウエハを支持する下方ダミーウエハ支持領域と、を有する基板保持具に対して、前記プロダクトウエハ支持領域に複数のプロダクトウエハを搭載するとともに、前記上方ダミーウエハ支持領域および前記下方ダミーウエハ支持領域のそれぞれにダミーウエハを搭載する手順と、
前記プロダクトウエハおよび前記ダミーウエハを搭載した前記基板保持具を、前記基板保持具を収容する処理室に搬入する手順と、
前記基板保持具に沿って上下方向に延伸し、複数のガス供給孔が形成されたチューブ状のノズルを有し、前記複数のガス供給孔のうち、前記ノズルの最も上方に形成されたガス供給孔の上端が、前記上方ダミーウエハ支持領域で支持される最も上方のダミーウエハに対応させて配置されるともに、前記ノズルの最も下方に形成されたガス供給孔の下端が、前記下方ダミーウエハ支持領域で支持される最も下方のダミーウエハに対応させて配置される第1及び第3のガス供給部の少なくとも1つから、パージガス又は不活性ガスを前記基板保持具へ供給する工程と、
前記基板保持具に沿って上下方向に一本のみ延伸し、複数のガス供給孔又はスリット状の開口部からなるガス供給口が形成されたチューブ状のノズルを有し、前記ガス供給口の上端が、前記上方ダミーウエハ支持領域で支持される最も下方のダミーウエハよりも低い位置に配置されるともに、前記ガス供給口の下端が、前記下方ダミーウエハ支持領域で支持される最も上方のダミーウエハよりも高い位置に配置された第2のガス供給部と、から、前記基板保持具への原料ガス供給を行って前記プロダクトウエハを処理する手順と、
をコンピュータによって基板処理装置に実行させるプログラム。
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JP2022124138A (ja) * | 2021-02-15 | 2022-08-25 | 東京エレクトロン株式会社 | 処理装置 |
JP2024065939A (ja) * | 2022-10-31 | 2024-05-15 | 株式会社Kokusai Electric | 基板処理装置、半導体装置の製造方法及び基板処理プログラム |
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US20200407851A1 (en) | 2020-12-31 |
TW201940248A (zh) | 2019-10-16 |
JP6919060B2 (ja) | 2021-08-11 |
CN110998806B (zh) | 2024-05-31 |
KR20230113657A (ko) | 2023-07-31 |
KR20200118181A (ko) | 2020-10-14 |
CN110998806A (zh) | 2020-04-10 |
SG11202008792XA (en) | 2020-10-29 |
US20220145464A1 (en) | 2022-05-12 |
JPWO2019180905A1 (ja) | 2021-03-11 |
TWI701084B (zh) | 2020-08-11 |
KR102559965B1 (ko) | 2023-07-25 |
US11967501B2 (en) | 2024-04-23 |
US11261528B2 (en) | 2022-03-01 |
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