WO2017047686A1 - ガス供給部、基板処理装置、及び半導体装置の製造方法 - Google Patents
ガス供給部、基板処理装置、及び半導体装置の製造方法 Download PDFInfo
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- WO2017047686A1 WO2017047686A1 PCT/JP2016/077235 JP2016077235W WO2017047686A1 WO 2017047686 A1 WO2017047686 A1 WO 2017047686A1 JP 2016077235 W JP2016077235 W JP 2016077235W WO 2017047686 A1 WO2017047686 A1 WO 2017047686A1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45559—Diffusion of reactive gas to substrate
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45502—Flow conditions in reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45546—Atomic layer deposition [ALD] characterized by the apparatus specially adapted for a substrate stack in the ALD reactor
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45578—Elongated nozzles, tubes with holes
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
Definitions
- the present invention relates to a substrate processing apparatus for processing a plurality of substrates held by a substrate holder and a method for manufacturing a semiconductor device.
- a vertical film forming apparatus which is one of substrate processing apparatuses
- a boat (substrate holder) on which a plurality (tens to hundreds of substrates) of substrates (wafers) are mounted is processed.
- a process gas is supplied to the chamber and heated, and the pressure and temperature of the process chamber are set to predetermined values, and a film formation process is performed on the substrate surface.
- a porous nozzle having gas ejection holes equal to the number of wafers installed in the processing chamber is used.
- the gas phase decomposition of the source gas proceeds inside the nozzle.
- Thermal decomposition in the gas phase proceeds according to the residence time exposed to the decomposition temperature.
- the residence time of the source gas is short on the upstream side of the gas flow (lower side of the wafer arrangement region), and the residence time of the source gas is long on the downstream side (upper side of the wafer arrangement region). Therefore, the raw material gas is ejected in an undecomposed state in the lower stage of the wafer arrangement area and in a state of decomposition in the upper stage of the wafer arrangement area.
- There are few source gases that contribute to film formation when the source gas is undecomposed and there are many source gases that contribute to film formation when decomposition is advanced, resulting in a difference in film thickness above and below the wafers arranged in the vertical direction. .
- the film thickness of the wafer on the upper side of the wafer arrangement area becomes thicker than that on the lower side of the wafer arrangement area.
- a method of supplying a raw material gas by arranging a plurality of open end nozzles having different lengths. Also in this case, since the lengths of the nozzles are different, the residence time of the raw material gas in each nozzle is different. For example, a gas that has passed through a long nozzle and a gas that has passed through a short nozzle are subject to thermal decomposition due to a long residence time. The film thickness becomes thick at the top.
- An object of the present invention is to provide a configuration that improves the uniformity of the concentration of the processing gas supplied to the substrates arranged in the vertical direction.
- One aspect of the present invention includes a first gas supply pipe and a second gas supply pipe that supply processing gases of the same type and the same mass flow rate from the respective upper ends, and the first gas supply pipe And a gas supply unit for supplying a processing gas for processing the plurality of substrates to a processing chamber for storing the plurality of substrates arranged in the vertical direction via the second gas supply pipe,
- the length of the first gas supply pipe facing the substrate arrangement area where a plurality of substrates are arranged is L1
- the flow path cross-sectional area of the first gas supply pipe is S1
- the substrate arrangement area is opposed to the substrate arrangement area.
- a gas supply unit configured such that L1 is longer than L2 and S1 is smaller than S2, where L2 is a length of the second gas supply pipe and S2 is a flow path cross-sectional area of the second gas supply pipe A configuration is provided.
- FIG. 1 is a perspective view showing a substrate processing apparatus according to an embodiment of the present invention. It is a schematic structure figure of a processing furnace concerning an embodiment of the present invention, and is a figure showing a processing furnace part with a longitudinal section.
- FIG. 3 is an AA cross-sectional view of the processing furnace shown in FIG. 2. It is a figure for demonstrating the 2nd gas supply system which concerns on embodiment of this invention. It is a figure for demonstrating the shape of the gas supply nozzle of 1st Example. It is a figure for demonstrating the shape of the gas supply nozzle of 2nd Example. It is a block diagram for demonstrating the controller of the substrate processing apparatus which concerns on embodiment of this invention. It is a figure for demonstrating the shape of the gas supply nozzle of 3rd Example.
- the substrate processing apparatus is configured as a semiconductor manufacturing apparatus that performs processing steps in a method of manufacturing a semiconductor device.
- a batch type vertical semiconductor manufacturing apparatus (hereinafter also simply referred to as a processing apparatus) that performs film forming processing such as CVD processing on a substrate is applied as a substrate processing apparatus.
- the same components may be denoted by the same reference numerals and repeated description may be omitted.
- the drawings may be schematically represented with respect to the width, thickness, shape, etc. of each part as compared to the actual embodiment, but are merely examples, and the interpretation of the present invention is not limited to them. It is not limited.
- the processing apparatus 1 in which a cassette 100 as a wafer carrier containing a wafer (substrate) 200 is used includes a housing 101.
- a cassette stage 105 is installed inside the housing 101 of the cassette loading / unloading exit (not shown).
- the cassette 100 is loaded onto the cassette stage 105 by an in-process transfer device (not shown) and unloaded from the cassette stage 105.
- the cassette stage 105 is placed by the in-process transfer device so that the wafer 200 in the cassette 100 is in a vertical posture and the wafer loading / unloading port of the cassette 100 faces upward.
- the cassette stage 105 can be operated so that the cassette 100 is rotated 90 ° clockwise to the rear of the casing, the wafer 200 in the cassette 100 is in a horizontal posture, and the wafer loading / unloading port of the cassette 100 faces the rear of the casing. It is configured as follows.
- a cassette shelf 109 is installed at a substantially central portion in the front-rear direction in the casing 101, and the cassette shelf 109 is configured to store a plurality of cassettes 100 in a plurality of stages and a plurality of rows.
- the cassette shelf 109 is provided with a transfer shelf 123 in which the cassette 100 is stored.
- a spare cassette shelf 110 is provided above the cassette stage 105, and is configured to store the cassette 100 preliminarily.
- a cassette elevator 115 and a cassette transfer machine 114 that can be moved up and down while holding the cassette 100.
- the cassette 100 is transported between the cassette stage 105, the cassette shelf 109, and the spare cassette shelf 110 by the continuous operation of the cassette elevator 115 and the cassette transfer device 114.
- a wafer transfer machine 112 capable of rotating or linearly moving the wafer 200 in the horizontal direction and a transfer elevator 113 for raising and lowering the wafer transfer machine 112 are provided.
- the transfer elevator 113 is installed at the right end of the pressure-resistant housing 101.
- the wafer (substrate holder) 217 of the wafer transfer machine 112 is used as the wafer 200 mounting part and the wafer (substrate holding part) 217 is used as a wafer.
- 200 is configured to be charged (charging) and unloaded (discharged).
- a processing furnace 202 is provided above the rear portion of the saddle casing 101.
- a lower end portion of the processing furnace 202 is configured to be opened and closed by a furnace port shutter 116.
- a boat elevator 121 is provided as a lifting mechanism for moving the boat 217 up and down to the processing furnace 202, and a lifting member 122 as a connecting tool connected to a lifting platform of the boat elevator 121 is used as a lid.
- a seal cap 219 is installed horizontally, and the seal cap 219 is configured to support the boat 217 vertically and to close the lower end portion of the processing furnace 202.
- the boat 217 serving as a substrate holding means includes a plurality of boat column portions 221, and a plurality of (for example, about 50 to 150) wafers 200 are aligned in the vertical direction with their centers aligned. These are configured to be held horizontally.
- a clean unit 118 composed of a supply fan and a dust-proof filter is provided above the cassette shelf 109 so as to supply clean air that is a cleaned atmosphere. Is circulated in the housing 101.
- the cassette 100 is loaded from the cassette loading / unloading port, and is mounted on the cassette stage 105 so that the wafer 200 is in a vertical posture and the wafer loading / unloading port of the cassette 100 faces upward. Placed. Thereafter, the cassette 100 is rotated 90 degrees clockwise in the clockwise direction to the rear of the casing so that the wafer 200 in the cassette 100 is in a horizontal posture and the wafer loading / unloading port of the cassette 100 faces the rear of the casing by the cassette stage 105. .
- the cassette 100 is automatically transported to the designated shelf position of the cassette shelf 109 to the spare cassette shelf 110, delivered, temporarily stored, and then transferred from the cassette shelf 109 to the spare cassette shelf 110. It is transferred to the mounting shelf 123 or directly conveyed to the mounting shelf 123.
- the wafer 200 is picked up from the cassette 100 by the tweezer 111 of the wafer transfer device 112 through the wafer loading / unloading port and loaded into the boat 217.
- the wafer transfer device 112 that has transferred the wafer 200 to the boat 217 returns to the cassette 100 and loads the next wafer 200 into the boat 217.
- the lower end portion of the processing furnace 202 that has been closed by the furnace port shutter 116 is opened by the furnace port shutter 116. Subsequently, the boat 217 holding the wafer group 200 is carried into the processing furnace 202 when the seal cap 219 is lifted by the boat elevator 121.
- any processing is performed on the wafer 200 in the processing furnace 202. After the processing, the wafer 200 and the cassette 100 are discharged to the outside of the housing 101 in the reverse procedure described above.
- a reaction tube 203 as a reaction vessel for processing a wafer 200 as a substrate is provided inside a heater 207 as a heating device (heating unit).
- a manifold 209 is provided at the lower end of the reaction tube 203 via an O-ring 220 that is an airtight member. The lower end opening of the manifold 209 is airtightly closed through the O-ring 220 by a seal cap 219 that is a lid.
- a processing chamber (reaction chamber) 201 is formed by at least the reaction tube 203, the manifold 209 and the seal cap 219.
- the material of the reaction tube 203 is, for example, quartz.
- the material of the manifold 209 and the seal cap 219 is stainless steel, for example.
- a boat 217 which is a substrate holding member (substrate holding portion) is erected on the anchor seal cap 219 via a boat support base 218, and the boat support base 218 serves as a holding body for holding the boat. Then, the boat 217 is inserted into the processing chamber 201. A plurality of wafers 200 to be batch-processed are stacked on the boat 217 in a horizontal posture in multiple stages in the tube axis direction of the reaction tube 203. As described above, the boat 217 holds the plurality of wafers 200 arranged in the vertical direction (vertical direction).
- FIG. 2 only the wafers 200 mounted on the uppermost and lowermost stages of the boat 217 are shown, but a plurality of wafers 200 are held between the uppermost and lowermost wafers 200. Further, in FIG. 2, illustration of the boat support 221 is omitted for easy understanding of the drawing.
- the soot heater 207 is provided around the reaction tube 203 and heats the wafer 200 inserted into the processing chamber 201 to a predetermined temperature.
- the heater 207 is provided so as to surround a wafer arrangement area (substrate arrangement area) where a plurality of wafers 200 are arranged.
- the heater 207 is provided so as to cover the reaction tube 203 above the boundary between the bottom of the boat 217 and the top of the boat support 218.
- the heater 207 is provided so as to cover a buffer chamber 204 described later.
- a temperature sensor 265 (not shown) for measuring the temperature of the wafer 200 is provided inside or outside the reaction tube 203.
- a buffer chamber 204 for supplying a processing gas with a uniform flow rate to the plurality of wafers 200 on the boat 217 is provided.
- the material of the buffer chamber wall 205 forming the buffer chamber 204 is, for example, quartz.
- the buffer chamber 204 is a space surrounded by the buffer chamber wall 205 and the side wall of the reaction tube 203, and is provided to face the plurality of wafers 200 on the boat 217.
- nozzles 231 and nozzles 232 each having a vertical tube axis are arranged in the stacking direction (vertical direction) of the plurality of wafers 200.
- the nozzle 231 and the nozzle 232 constitute a first gas supply system which will be described later. Therefore, the processing gas inside the nozzle 231 and the nozzle 232 extending upward in the wafer arrangement area surrounded by the heater 207 is decomposed by the heat of the heater 207.
- a nozzle 233 constituting a second gas supply system is disposed inside the reaction tube 203 and outside the buffer chamber 204.
- the nozzle 233 is a perforated nozzle having a plurality of gas outlets 233a on its side wall.
- the nozzles 231 to 233 are bent at a right angle in the vicinity of the manifold 209, change the direction in the horizontal direction, pass through the manifold 209 from the inside to the outside, and then are connected to the gas pipes 241a to 243a.
- the material of the nozzles 231 to 233 is, for example, quartz.
- the joint between the nozzles 231 to 233 and the gas pipes 241a to 243a may be inside the manifold 209.
- the gas pipes 241a to 243a are respectively connected to the nozzles 231 to 233 after passing through the manifold 209 from the outside to the inside and then bent at a right angle in the vicinity of the manifold 209 to change the direction in the vertical direction.
- the nozzle 231 is drawn at a position farther than the nozzle 232 with respect to the boat 217, but this is for easy understanding of the drawing.
- the nozzle 231 and the nozzle 232 are preferably arranged so as to be equidistant.
- the upper ends of the nozzles 231 and 232 are provided with openings to be described later, and the processing gas is supplied into the buffer chamber 204 from the openings.
- gas is supplied from the two nozzles 231 and 232, but it goes without saying that the number is not limited to this number (two).
- one porous nozzle 233 is arranged outside the buffer chamber 204, but a plurality of nozzles 233 constituting the second gas supply system may be arranged inside the buffer chamber 204.
- the plurality of gas outlets 233a of the plurality of nozzles 233 are not provided with a plurality as shown in FIG. 4, but an opening, which will be described later, is provided at the upper end of the nozzle 233 upward like the nozzle 231 and the nozzle 232. You may make it provide.
- the buffer chamber 204 is disposed inside the reaction tube 203, but the buffer chamber 204 may be disposed outside the reaction tube 203. In the first to fourth embodiments to be described later, the buffer chamber 204 is disposed outside the reaction tube 203 (see FIGS. 5, 6, 8, and 9).
- Gas Supply System (1-2) Gas Supply Unit
- Two gas supply systems as the gas supply unit (first gas supply unit) are used as supply paths for supplying a plurality of types (two types in this embodiment) of processing gas to the soot processing chamber 201.
- Gas supply system and second gas supply system are used as supply paths for supplying a plurality of types (two types in this embodiment) of processing gas to the soot processing chamber 201.
- the first gas supply system includes a first gas supply line and a first carrier gas supply line.
- the first gas supply line includes a first gas source 245a that is a raw material supply unit that supplies raw materials and a valve 247b1 that is an on-off valve in order from the upstream direction with respect to the gas pipe 240 that supplies the first processing gas. It is provided and branches into a gas pipe 241 and a gas pipe 242 on the downstream side of the valve 247b1 (downstream side of the gas flow).
- the on-off valve may be referred to as a valve.
- a mass flow controller (MFC) 246a and a valve 247a which are flow rate control devices (flow rate control units) are provided in order from the upstream direction.
- the gas pipe 241 merges with the gas pipe 251, that is, a first carrier gas supply line, which will be described later, on the downstream side of the valve 247 a to become a gas pipe 241 a.
- the mass flow controller may be referred to as MFC.
- the mass flow controller controls the flow rate by measuring the mass flow rate of the gas.
- an MFC 246b and a valve 247b2 are provided in order from the upstream direction.
- the gas pipe 242 merges with the gas pipe 252, that is, the first carrier gas supply line on the downstream side of the valve 247 b 2, and becomes a gas pipe 242 a.
- the first carrier gas supply line is provided with an MFC 246d and a valve 247d in order from the upstream direction with respect to the gas pipe 250 that supplies the carrier gas.
- the gas pipe 250 branches into a gas pipe 251 and a gas pipe 252 on the downstream side of the valve 247d. As described above, the gas pipe 251 and the gas pipe 252 merge with the gas pipe 241 and the gas pipe 242, respectively, to become the gas pipe 241a and the gas pipe 242a.
- a nozzle 231 and a nozzle 232 are attached to the downstream ends of the gas pipe 241a and the gas pipe 242a, respectively.
- the nozzle 231 and the nozzle 232 are provided along the stacking direction (vertical direction) of the wafer 200 in the buffer chamber 204 from the lower portion to the upper portion of the buffer chamber 204.
- a gas outlet 232 a serving as an opening for ejecting gas from the nozzle 232 into the buffer chamber 204 is provided at the upper end of the nozzle 232 so as to open upward. Since the gas outlet 231a and the gas outlet 232a are opened upward, the gas emitted from the nozzle 231 and the nozzle 232 is jetted upward.
- the gas outlet 231a at the upper end of the nozzle 231 and the gas outlet 232a at the upper end of the nozzle 232 are in a direction other than upward, for example, the direction opposite to the direction of the wafer 200 (direction of the reaction tube 203) or the lateral direction ( You may comprise so that it may open in the direction in alignment with the tube wall of the reaction tube 203).
- the gas flow rate is large, the upward momentum of the gas exiting from the nozzle 231 and the nozzle 232 can be suppressed, and the gas flowing out from the upper part of the buffer chamber 204 is larger than the gas flowing out from the lower part. It can be suppressed.
- the gas outlet 231 a is provided at a position about 3/4 or less from the bottom in a region (wafer arrangement region) where a plurality of wafers 200 are arranged on the boat 217.
- the gas outlet 232a is provided at a position about 1/4 or less from the bottom in the wafer arrangement region.
- the wafer outlet 231a and the gas outlet 232a are provided at a position slightly below about 3/4 from below and at a position slightly below about 1/4 from below, respectively.
- they are provided at a position about 3/4 from the bottom and a position about 1/4 from the bottom, respectively.
- the nozzle 231 and the nozzle 232 are provided at the same position from the center (1/2 position from the bottom) of the wafer arrangement region.
- the length of the nozzle 231 facing the wafer placement area is longer than the length of the nozzle 232 facing the wafer placement area.
- a plurality of gas outlets 205 a for ejecting the gas in the buffer chamber 204 into the processing chamber 201 are provided on the surface of the buffer chamber wall 205 facing the boat 217 as a plurality of openings communicating with the processing chamber 201. .
- the gas outlet 205 a is provided at a position facing the arrangement area of the plurality of wafers 200.
- the plurality of gas outlets 205 a are provided so as to correspond to the wafer 200 on a one-to-one basis. Specifically, the plurality of gas outlets 205 a are provided so as to face positions between the wafer 200 and the wafer 200. It is preferable. Accordingly, it becomes easy to supply a processing gas with a uniform flow rate to the plurality of wafers 200 on the boat 217.
- the first processing gas passes from the first gas source 245a through the gas pipe 240 and is branched into the gas pipe 241 and the gas pipe 242 on the downstream side of the valve 247b1.
- the processing gas in the gas pipe 241 is adjusted in flow rate by the MFC 246a, and merges with the carrier gas supplied from the gas pipe 251 through the valve 247a.
- the first processing gas that merges with the carrier gas from the gas pipe 251 passes through the gas pipe 241 a and is supplied to the buffer chamber 204 from the gas outlet 231 a formed in the nozzle 231, and the gas formed in the buffer chamber 204. It is supplied to the processing chamber 201 from the outlet 205a.
- the flow rate of the processing gas in the gas pipe 242 is adjusted by the MFC 246b, and merges with the carrier gas supplied from the gas pipe 252 through the valve 247b2. Then, the first processing gas that merged with the carrier gas from the gas pipe 252 passes through the gas pipe 242 a, is supplied to the buffer chamber 204 from the gas outlet 232 a formed in the nozzle 232, and is formed in the buffer chamber 204. It is supplied to the processing chamber 201 from the outlet 205a.
- the second gas supply system includes a second gas supply line and a second carrier gas supply line.
- the second gas supply line is configured to include a second gas source 245c, an MFC 246c, and a valve 247c in order from the upstream direction with respect to the gas pipe 243 for supplying the second processing gas.
- the second carrier gas supply line is configured to include the MFC 246e and the valve 247e in order from the upstream direction with respect to the gas pipe 253 for supplying the carrier gas.
- the gas pipe 243 of the second gas supply line and the gas pipe 253 of the second carrier gas supply line merge on the downstream side of the valve 247c and the valve 247e to form a gas pipe 243a.
- a nozzle 233 is attached to the downstream end of the gas pipe 243a.
- the nozzle 233 is formed in an arcuate space between the inner wall of the reaction tube 203 constituting the processing chamber 201 and the wafer 200, and on the inner wall above the lower portion of the reaction tube 203.
- the wafer 200 is provided in the stacking direction (vertical direction). As described above, the nozzle 233 is arranged along the stacking direction of the plurality of wafers 200 on the boat 217.
- a plurality of gas outlets 233a which are supply holes for supplying gas to the processing chamber 201, are provided on the side surface of the nozzle 233 so as to face the wafers 200 in the region where the plurality of wafers 200 exist on the boat 217. ing.
- the gas outlets 233a have the same opening area from the lower part to the upper part, and are provided at the same opening pitch.
- the gas outlet 233a has a hole diameter of, for example, 0.1 to 5 mm, and is preferably provided so as to correspond to the wafer 200 on a one-to-one basis. Accordingly, it becomes easy to supply a processing gas with a uniform flow rate to the plurality of wafers 200 on the boat 217.
- the second processing gas passes from the second gas source 245c through the gas pipe 243, the flow rate is adjusted by the MFC 246c, and merges with the carrier gas supplied from the gas pipe 253 through the valve 247c. Then, the gas passes through the gas pipe 243 a and is supplied to the processing chamber 201 from the gas outlet 233 a formed in the third nozzle 233.
- FIGS. 5 and 6 and FIGS. 8 and 9 the boat 217 is not shown.
- the buffer chamber 204 is provided outside the reaction tube 203, but may be provided inside the reaction tube 203 as described above. Further, although the buffer chamber 204 is provided up to the lower portion of the boat support 218, the buffer chamber 204 may be provided up to the upper portion of the boat support 218 as shown in FIG.
- two tip (upper end) open type gas supply nozzles 231 and 232 having different lengths and diameters are provided in a buffer chamber 204 disposed on the side of the wafer 200. is set up.
- the buffer chamber 204 communicates with the processing chamber 201 through a gas outlet 205a.
- the gas outlet 205 a is provided in a one-to-one relationship with the wafer 200 and is a horizontally long and elongated slit, but it may be a circular hole.
- the inner diameter Da of the long nozzle 231 is thinner than the inner diameter Db of the short nozzle 232. For example, Da is 10 to 15 mm, and Db is 20 to 25 mm.
- the mass flow rate of the gas passing through the gas outlet 205a of the buffer chamber 204 is different in the vertical direction, the flow velocity of the gas passing over the wafer 200 will be different in the upper and lower wafers 200.
- Qa is the mass flow rate of the first gas flowing through the nozzle 231
- Qb is the mass flow rate of the first gas flowing through the nozzle 232.
- the same mass flow rate is not exactly the same, and the values of Qa and Qb are such that the degree of processing (for example, film thickness distribution) between the surfaces of the wafer 200 can be suppressed. Including close.
- the residence time of the gas passing through the nozzle 231 is longer than the residence time of the gas passing through the nozzle 232. become longer. Therefore, since the gas in the nozzle 231 is heated from the heater 207 for a longer time than the gas in the nozzle 232, the vapor phase decomposition of the source gas at the gas outlet 231 a of the nozzle 231 is performed at the source gas at the gas outlet 232 a of the nozzle 232. More advanced than gas phase decomposition.
- the inner diameter Da of the long nozzle 231 is made smaller than the inner diameter Db of the short nozzle 232, and the flow velocity of the gas in the nozzle 231 is increased.
- the gas residence time in the nozzle 231 heated by the heater 207 is adjusted to be the same as the gas residence time in the nozzle 232 heated by the heater 207. That is, the gas residence time in the nozzle 231 facing the wafer placement area where the wafer 200 is placed is adjusted to be the same as the gas residence time in the nozzle 232 facing the wafer placement area.
- the length of the nozzle 231 facing the wafer placement region where the wafer 200 is placed is L1
- the flow path cross-sectional area is S1
- the length of the nozzle 232 facing the wafer placement region is L2
- the flow cross-sectional area is S2.
- L1 is set to be longer than L2 and S1 is set to be smaller than S2.
- the nozzle 231 and the nozzle 232 have nozzle outlets. Since the degree of decomposition of the raw material gas is uniform, the concentration of the raw material gas is the same at the outlet 231 a of the nozzle 231 and the outlet 232 a of the nozzle 232. Therefore, the concentration of the source gas when supplied from the plurality of gas outlets 205a into the processing chamber 201 is the same in the wafer arrangement region where the wafer 200 is arranged.
- the concentration of the source gas is the same as the case where the concentration of the source gas is exactly the same, and the concentration value of the deposition gas is such that the difference in film thickness distribution between the surfaces of the wafer 200 can be suppressed. Including closeness.
- the pressure loss in each nozzle is relatively small and the pressure in the processing chamber 201 does not reach the choke flow, that is, the environment in which the pressure in the processing chamber 201 is 100 Pa or more as the first predetermined pressure. (For example, an environment of 100 Pa to 10,000 Pa).
- the characteristics of the gas supply unit of the second embodiment will be described with reference to FIG.
- the pressure in the processing chamber 201 is less than 100 Pa (for example, an environment of 1 Pa to 50 Pa)
- the inside of the open-end gas supply nozzle is choked, and the gas flow rate passing through the nozzle does not depend on the nozzle cross-sectional area.
- the sound speed is determined by the ambient temperature.
- the flow velocity in the nozzle is constant (sound velocity), so the gas staying time is longer in the nozzle 231 than in the nozzle 232, and the nozzle Decomposition of the source gas in H.231 is further promoted.
- the inner diameter Da (for example, 23 mm) of the long nozzle 231 is thicker than the inner diameter Db (for example, 13 mm) of the short nozzle 232. Only this point is different from the example of FIG. 5, and other points are the same as the example of FIG.
- the length of the nozzle 231 facing the wafer placement region where the wafer 200 is placed is L1
- the flow path cross-sectional area is S1
- the length of the nozzle 232 facing the wafer placement region is L2
- the flow cross-sectional area is S2.
- L1 is set longer than L2 and S1 is set larger than S2.
- Mass flow rate (kg / s) (Nozzle cross section (m 2 )) x (Gas density (kg / m 3 )) x (Flow velocity (sound velocity) (m / s)) For example, if the nozzle cross-sectional area is large, the gas density (that is, the internal pressure) decreases.
- Decomposition of raw material gas is influenced by environmental pressure in addition to temperature and residence time. Specifically, since the collision frequency between molecules is high in the high pressure field, the decomposition reaction is accelerated, and vice versa in the low pressure field. As described above, since the internal pressure of the nozzle 231 having a large cross-sectional area becomes low, decomposition of the raw material gas is suppressed. In this way, in an extremely low pressure environment of less than 100 Pa (particularly less than 50 Pa as the second predetermined pressure), the material gas at the outlet of each nozzle is set to the opposite setting (Da> Db) from the first embodiment. The decomposition state can be made uniform, and the film thickness distribution of the wafer 200 can be flattened between the upper and lower sides of the boat 217.
- the pressure in the processing chamber 201 is a pressure in a transition region between the first predetermined pressure and the second predetermined pressure (for example, an environment of 50 Pa to 100 Pa)
- Da Db
- the raw material at each nozzle outlet It is possible to make the gas decomposition state the same. Note that Da> Db may be slightly set.
- FIG. 8 shows a third embodiment as a configuration improved from the first embodiment
- FIG. 9 shows a fourth embodiment as a configuration improved from the second embodiment.
- a processing wafer 200 patterned wafer.
- the raw material gas consumption rate per unit time increases, so that the raw material gas concentration on the surface of the processing wafer 200 tends to decrease. Therefore, since the film thickness of the processing wafer 200 decreases as the source gas concentration decreases, it is difficult to keep the source gas concentration uniformity in the substrate arrangement region good.
- the substrate processing apparatus 1 when the patterned wafer 200 is processed, the upper and lower substrates in the substrate arrangement region are processed as bare wafers (dummy wafers). At this time, since the source gas is consumed in the region of the processing wafer 200 (substrate processing region), the concentration of the source gas decreases. On the other hand, since the source gas is surplus in the bare wafer region where the dummy wafer is disposed, the concentration becomes high. In other words, since concentration diffusion occurs through the gap between the wafer edge (end) and the inner wall of the reaction tube, the concentration of the source gas is added in the wafer stacking direction. In this case, the concentration distribution in the height direction of the processing wafer 200 region becomes uniform.
- the concentration uniformity of the processing gas in the substrate arrangement region deteriorates. Since the film thickness increases or decreases according to the concentration of the source gas concentration, the film thickness uniformity in the height direction (uniformity between surfaces) of the processing wafer 200 region is deteriorated.
- the nozzle 231 and the nozzle 232 are arranged so that the outlet 231a of the nozzle 231 and the outlet 232a of the nozzle 232 are positioned opposite to the bare wafer region. Installed. Thereby, when processing the patterned wafer 200, it is possible to improve the concentration uniformity in the vertical direction of the substrate arrangement region of the source gas.
- the nozzle 231 and the nozzle 232 are respectively installed so that the outlet 231a of the nozzle 231 and the outlet 232a of the nozzle 232 shown in the third embodiment (or the fourth embodiment) are positioned opposite to the bare wafer region.
- the distribution of the raw material gas concentration and the distribution of the film thickness are shown respectively.
- FIG. 11 or FIG. 12 is a diagram for explaining the concentration distribution and film thickness distribution of the source gas shown in FIG. 10 to 12, the source gas supply nozzle is provided in the reaction tube 203 and the buffer chamber 204 is omitted for easy understanding.
- FIG. 11 shows the concentration distribution state of the source gas when the source gas supply nozzle 231 (232) is shortened.
- HCDS hexachlorodisilane
- SiCl 6 abbreviation: SiCl 2
- Si radical gas has a high probability of adhesion to the surface of the wafer 200
- the density of this gas is considered to correlate with the increase or decrease in film thickness.
- the source gas supply nozzle 231 (232) is short, a large amount of undecomposed gas is supplied to the lower side of the wafer 200, so that the Si radical gas concentration is low and the film thickness is thin.
- Si radical gas is abundant and the film thickness is increased.
- FIG. 12 shows the concentration distribution of the HCDS gas when the source gas supply nozzle 231 (232) is lengthened in the same manner.
- the film thickness distribution is opposite to the film thickness distribution shown in FIG.
- the source gas supply nozzles 231 and 232 shown in FIG. 10 have a film thickness distribution in which the behavior described in FIGS. 11 and 12 is offset.
- the Si radical concentration in the upper and lower stages of the substrate arrangement area (or the substrate processing area) can be lowered.
- the source gas concentration distribution can be made uniform in the height direction of the substrate arrangement region (or substrate processing region). Thereby, the film thickness distribution in the substrate processing region is uniform, and the inter-surface uniformity of the film thickness distribution is improved.
- the outlet 231a of the nozzle 231 and the outlet 232a of the nozzle 232 may be provided at the boundary between the substrate processing region and the bare wafer region. Moreover, you may arrange
- the decomposition of the source gas depends on the environmental pressure in addition to the temperature and the residence time. Affected. In short, since the collision frequency between molecules is high in the high pressure field, the decomposition reaction is accelerated, and vice versa in the low pressure field.
- each nozzle can be set by setting it opposite to that in the third embodiment (Da> Db).
- the outlet material gas decomposition state can be made uniform, and the film thickness distribution of the wafer 200 can be flattened between the upper and lower sides of the boat 217.
- the pressure in the processing chamber 201 is set to the pressure in the transition region (for example, 50 Pa to 100 Pa).
- Da Db
- Da> Db may be slightly set.
- the processing chamber 201 is connected to a vacuum pump 264 that is an exhaust device (exhaust means) through an APC valve 263 by an exhaust pipe 261 that exhausts gas. Connected and evacuated.
- the exhaust pipe 261 is provided with a pressure sensor 262 for measuring the pressure in the processing chamber 201.
- the APC valve 263 is an on-off valve that can open and close the valve to evacuate and stop the evacuation of the processing chamber 201, and further adjust the pressure by adjusting the valve opening.
- the valve opening degree of the APC valve 263 is controlled by a controller 281 described later based on the value of the pressure sensor 262.
- a boat 217 that holds a plurality of wafers 200 at multiple intervals at the same interval is provided at the center of the reaction tube 203.
- the boat 217 can enter and exit the reaction tube 203 by a boat elevator 121 (see FIG. 1).
- a boat rotation mechanism 267 for rotating the boat 217 is provided. By driving the boat rotation mechanism 267, the boat 217 supported by the boat support 218 is rotated. It is supposed to be.
- the controller 281 is configured as a computer having a CPU (Central Processing Unit) 281a, a RAM (Random Access Memory) 281b, a storage device 281c, and an I / O port 281d.
- the RAM 281b, the storage device 281c, and the I / O port 281d are configured to exchange data with the CPU 281a via the internal bus 281e.
- an input / output device 282 configured as a touch panel or the like is connected to the controller 281.
- the storage device 281c is configured by, for example, a flash memory, an HDD (Hard Disk Drive), or the like.
- a control program for controlling the operation of the substrate processing apparatus, a process recipe in which a substrate processing procedure and conditions to be described later are described, and the like are stored in a readable manner.
- the process recipe is a combination so that a predetermined result can be obtained by causing the controller 281 to execute each procedure in a substrate processing step to be described later.
- the RAM 281b is configured as a memory area (work area) in which a program, data, and the like read by the CPU 281a are temporarily stored.
- the I / O port 281d is connected to MFCs 246a to 246e, valves 247a to 247e, pressure sensor 262, APC valve 263, vacuum pump 264, heater 207, rotating mechanism 267, boat elevator 121, and the like.
- the CPU 281a is configured to read out and execute a control program from the storage device 281c and to read out a process recipe from the storage device 281c in response to an operation command input from the input / output device 282 or the like. Then, the CPU 281a adjusts the flow rates of various gases by the MFCs 246a to 246e, the opening and closing operations of the valves 247a to 247e, the opening and closing operations of the APC valve 263, and the APC valve 263 based on the pressure sensor 262 in accordance with the contents of the read process recipe.
- the pressure adjustment operation of the heater 207, the temperature adjustment operation of the heater 207 based on the temperature sensor 265, the start and stop of the vacuum pump 264, the rotation and rotation speed adjustment operation of the boat 217 by the rotation mechanism 267, the raising and lowering operation of the boat 217 by the boat elevator 121, etc. Configured to control.
- controller 281 is not limited to being configured as a dedicated computer, but may be configured as a general-purpose computer.
- the controller 281 according to the present embodiment can be configured by installing the program in a general-purpose computer using the external storage device 283 storing the above-described program.
- the storage device 281c and the external storage device 283 are configured as computer-readable recording media. Hereinafter, these are collectively referred to simply as a recording medium.
- recording medium When the term “recording medium” is used in this specification, it may include only the storage device 281c, only the external storage device 283, or both.
- the means for supplying the program to the computer is not limited to the case of supplying via the external storage device 283.
- the program may be supplied without using the external storage device 283 by using communication means such as the Internet or a dedicated line.
- Si 3 N 4 film Si 3 N 4 film
- NH 3 ammonia
- a step of supplying HCDS gas to the wafer 200 in the processing chamber 201, a step of removing HCDS gas (residual gas) from the processing chamber 201, and a wafer in the processing chamber 201 The wafer 200 is subjected to a predetermined number of times (one or more times) in which the process of supplying the NH 3 gas to the process 200 and the process of removing the NH 3 gas (residual gas) from the processing chamber 201 are performed simultaneously.
- a SiN film is formed thereon.
- wafer may mean the wafer itself or a laminate of the wafer and a predetermined layer or film formed on the surface thereof.
- wafer surface may mean the surface of the wafer itself, or may mean the surface of a predetermined layer or the like formed on the wafer.
- the phrase “form a predetermined layer on the wafer” means that the predetermined layer is directly formed on the surface of the wafer itself, a layer formed on the wafer, etc. It may mean that a predetermined layer is formed on the substrate.
- substrate is also synonymous with the term “wafer”.
- Vacuum exhaust (reduced pressure exhaustion) is performed by the vacuum pump 264 so that the processing chamber 201, that is, the space where the wafer 200 exists, has a predetermined pressure (degree of vacuum). At this time, the pressure in the processing chamber 201 is measured by the pressure sensor 262, and the APC valve 263 is feedback-controlled based on the measured pressure information. The vacuum pump 264 maintains a state in which it is always operated at least until the processing on the wafer 200 is completed.
- the wafer 200 in the processing chamber 201 is heated by the heater 207 so as to reach a predetermined temperature.
- the power supply to the heater 207 is feedback-controlled based on the temperature information detected by the temperature sensor 265 so that the processing chamber 201 has a predetermined temperature distribution. Heating of the processing chamber 201 by the heater 207 is continuously performed at least until the processing on the wafer 200 is completed.
- the rotation of the boat 217 and the wafers 200 by the rotation mechanism 267 is started.
- the wafer 200 is rotated.
- the rotation of the boat 217 and the wafer 200 by the rotation mechanism 267 is continuously performed at least until the processing on the wafer 200 is completed.
- Step 1 HCDS gas is supplied to the wafer 200 in the processing chamber 201.
- the valve 247b1, the valve 247a, and the valve 247b2 are opened, and HCDS gas is allowed to flow into the gas pipe 240.
- the HCDS gas is branched into a gas pipe 241 and a gas pipe 242.
- the flow rate of the HCDS gas in the gas pipe 241 is adjusted by the MFC 246 a, supplied from the gas pipe 241 a to the processing chamber 201 through the nozzle 231 and the buffer chamber 204, and exhausted from the exhaust pipe 261.
- the flow rate of the HCDS gas in the gas pipe 242 is adjusted by the MFC 246 b, supplied to the processing chamber 201 from the gas pipe 242 a through the nozzle 232 and the buffer chamber 204, and exhausted from the exhaust pipe 261.
- HCDS gas is supplied from the nozzle 231 and the nozzle 232 to the wafer 200 in the processing chamber 201 through the buffer chamber 204.
- the mass flow rate of the HCDS gas supplied from the nozzle 231 and the nozzle 232 is controlled to be the same by the MFC 246a and the MFC 246b.
- the valve 247 d When supplying the HCDS gas, the valve 247 d is opened, and N 2 gas is allowed to flow into the gas pipe 251 and the gas pipe 252. The flow rate of the N 2 gas is adjusted by the MFC 246d, and the N 2 gas is supplied into the processing chamber 201 together with the HCDS gas, and is exhausted from the exhaust pipe 261.
- HCDS gas By supplying HCDS gas to the wafer 200, a Si-containing layer is formed as the first layer on the outermost surface of the wafer 200.
- the valve 247b1, the valve 247a, and the valve 247b2 are closed, and the supply of HCDS gas is stopped.
- the APC valve 263 is kept open, the processing chamber 201 is evacuated by the vacuum pump 264, and the HCDS gas remaining in the processing chamber 201 or contributing to the formation of the first layer is processed.
- the inside of the chamber 201 is discharged.
- the supply of N 2 gas into the processing chamber 201 is maintained with the valve 247d kept open.
- the N 2 gas acts as a purge gas, whereby the effect of exhausting the gas remaining in the processing chamber 201 from the processing chamber 201 can be enhanced.
- the gas remaining in the processing chamber 201 may not be completely discharged, and the processing chamber 201 may not be completely purged. If the amount of gas remaining in the processing chamber 201 is very small, there will be no adverse effect in the subsequent step 2.
- the flow rate of the N 2 gas supplied into the processing chamber 201 does not need to be a large flow rate. For example, by supplying an amount of N 2 gas equivalent to the volume of the reaction tube 203 (processing chamber 201), step 2 is performed. Purging can be performed to such an extent that no adverse effect is caused. Thus, by not completely purging the inside of the processing chamber 201, the purge time can be shortened and the throughput can be improved. The consumption of N 2 gas can be suppressed to the minimum necessary.
- Step 2 After Step 1 is completed, NH 3 gas is supplied to the wafer 200 in the processing chamber 201, that is, the first layer formed on the wafer 200.
- the NH 3 gas is activated by heat and supplied to the wafer 200.
- the flow rate of NH 3 gas is adjusted by the MFC 246 c, supplied into the processing chamber 201 from the gas pipe 243 through the gas pipe 243 a and the nozzle 233, and exhausted from the exhaust pipe 261.
- NH 3 gas is supplied to the wafer 200.
- the valve 247e may be opened at the same time to allow the N 2 gas to flow into the gas pipe 253.
- the flow rate of the N 2 gas is adjusted by the MFC 246e, and the N 2 gas is supplied into the processing chamber 201 together with the NH 3 gas.
- the NH 3 gas supplied to the wafer 200 reacts with at least a part of the first layer, that is, the Si-containing layer formed on the wafer 200 in Step 1. Thereby, the first layer is thermally nitrided by non-plasma and is changed (modified) into a second layer containing Si and N, that is, a SiN layer.
- plasma-excited NH 3 gas may be supplied to the wafer 200, and the first layer may be changed to the second layer by plasma nitriding the first layer.
- the valve 247c is closed and the supply of NH 3 gas is stopped. Then, the valve 247d and the valve 247e are opened by the same processing procedure as in Step 1, and N 2 gas is supplied to each of the nozzles 231 to 233 to form an unreacted or second layer remaining in the processing chamber 201.
- the NH 3 gas and reaction by-products after contributing to the above are discharged from the processing chamber 201. At this time, it is the same as in step 1 that the gas remaining in the processing chamber 201 does not have to be completely discharged.
- a SiN film having a predetermined composition and a predetermined film thickness is formed on the wafer 200 by performing the above-described two steps non-simultaneously, that is, by performing a predetermined number of times (n times) without synchronizing them. be able to. That is, the thickness of the second layer formed when the above cycle is performed once is made smaller than a predetermined thickness, and the thickness of the SiN film formed by stacking the second layers is predetermined. The above-described cycle is repeated a plurality of times until the film thickness is reached.
- the processing conditions for film formation include, for example, processing temperature (wafer temperature): 250 to 800 ° C., processing pressure (pressure in the processing chamber): 1 to 4000 Pa, HCDS gas supply flow rate: 1 to 2000 sccm, NH 3 gas Examples of the supply flow rate are 100 to 10,000 sccm, and the N 2 gas supply flow rate (when HCDS gas is supplied): 100 to 10000 sccm.
- the processing temperature is 500 to 630 ° C.
- the nozzles 231 and 232 are used as the nozzles shown in FIG. 5 (first embodiment), and the processing pressure is 5 to 20 Pa.
- the processing temperature is 500 to 630 ° C.
- the nozzles shown in FIG. 6 (second embodiment) are used as the nozzles 231 and 232.
- the nozzle shown in FIG. 8 (third embodiment) or the nozzle shown in FIG. 9 (fourth embodiment) is used as the nozzle 231 and the nozzle 232 according to the processing pressure.
- HCDS gas when supplying the HCDS gas, 100 sccm HCDS gas is supplied to the nozzle 231 and the nozzle 232, respectively.
- N 2 gas having a flow rate of 0 to 500 sccm is supplied to the nozzle 231 and the nozzle 232, and 100 sccm of N 2 gas is supplied to the nozzle 233.
- the reason for supplying the N 2 gas to the nozzle 233 is to prevent the HCDS gas from entering.
- NH 3 gas when the NH 3 gas is supplied after the supply of the HCDS gas is finished, 5000 sccm of NH 3 gas is supplied to the nozzle 233.
- N 2 gas having a flow rate between 0 and 10,000 sccm is supplied to the nozzle 233, and 500 sccm of N 2 gas is supplied to the nozzle 231 and the nozzle 232, respectively.
- the reason for supplying the N 2 gas to the nozzle 231 and the nozzle 232 is to prevent the intrusion of the NH 3 gas.
- the valve 247d is opened, N 2 gas is supplied from the gas pipe 251 and the gas pipe 252 through the buffer chamber 204, and the exhaust pipe 261 is supplied. Exhaust from. N 2 gas acts as a purge gas. As a result, the inside of the processing chamber 201 is purged, and the gas and reaction by-products remaining in the processing chamber 201 are removed from the processing chamber 201.
- the valve 247 e may be opened, and N 2 gas may be supplied from the gas pipe 253 into the processing chamber 201 through the gas pipe 243 a and the nozzle 233. Thereafter, the atmosphere in the processing chamber 201 is replaced with an inert gas (N 2 gas) (inert gas replacement), and the pressure in the processing chamber 201 is returned to normal pressure (return to atmospheric pressure).
- N 2 gas inert gas
- the seal cap 219 is lowered by the boat elevator 121 and the lower end of the reaction tube 203 is opened. Then, the processed wafer 200 is carried out from the lower end of the reaction tube 203 to the outside of the reaction tube 203 while being supported by the boat 217. The processed wafer 200 is taken out from the boat 217.
- the step of supplying the HCDS gas and the step of supplying the N 2 gas are performed non-simultaneously, but the present invention is not limited to this, and the two steps are performed simultaneously. It is also applicable to processes.
- a gas supply unit that includes a first gas supply pipe and a second gas supply pipe that supply the same type of processing gas having the same mass flow rate from the upper ends of the process gases
- the length of the first gas supply pipe is L1
- the cross-sectional area of the flow path is S1
- the length of the second gas supply pipe facing the substrate arrangement region is L2
- the cross-sectional area of the flow path is S2
- L1 is L2. Therefore, the uniformity of the concentration of the processing gas supplied to the plurality of substrates arranged in the substrate arrangement region can be improved.
- the first gas supply pipe and the second gas supply pipe are accommodated and provided with a buffer chamber having a plurality of openings communicating with the processing chamber, and supplied from the first gas supply pipe and the second gas supply pipe. Since the processed gas is supplied from the plurality of openings of the buffer chamber into the processing chamber at the same flow rate, the concentration uniformity of the processing gas supplied to the substrate can be further improved.
- each of the plurality of openings in the buffer chamber can correspond to each of the plurality of substrates, the concentration uniformity of the processing gas supplied to the substrate can be further improved.
- the length of the first gas supply pipe facing the substrate arrangement area is L1
- the internal cross-sectional area of the flow path is S1
- the length of the second gas supply pipe facing the substrate arrangement area is L2
- the internal cross-sectional area of the flow path is Where S1 is longer than L2 and S1 is smaller than S2, or L1 is longer than L2 and S1 is larger than S2, or L1 is larger than L2. Furthermore, it is possible to improve the concentration uniformity of the processing gas supplied to the plurality of substrates arranged in the substrate arrangement region.
- a gas supply unit including a first gas supply pipe and a second gas supply pipe that supply the same kind of processing gas having the same mass flow rate from the upper ends of the processing gases, By disposing the upper ends of the second gas supply pipes at positions facing the bare wafer region, it is possible to improve the concentration uniformity of the processing gas between the patterned substrates disposed in the processing chamber.
- the above effect is the same when using a gas other than HCDS gas as the source gas, when using a gas other than NH 3 gas as the N-containing gas, or when using an inert gas other than N 2 gas as the purge gas. Can get to.
- the HCDS gas is supplied from the first gas supply system.
- monosilane gas SiH 4 gas
- monosilane gas of 50 to 250 sccm is supplied from the nozzle 231 and the nozzle 232 of FIG. 5 into the processing chamber at 100 to 150 Pa and around 700 ° C., respectively.
- the gas supply system for supplying the processing gas to the processing chamber is configured to include the first gas supply system and the second gas supply system, but the present invention is not limited to this. Instead, the present invention can be applied to a case where the gas supply system includes only the first gas supply system.
- the buffer chamber 204 is provided, and the nozzle 231 and the nozzle 232 are arranged in the buffer chamber 204.
- the buffer chamber 204 may not be provided, and the nozzle 231 and the nozzle 232 may be arranged in the reaction tube 203.
- the present invention can be applied not only to a semiconductor manufacturing apparatus, but also to an apparatus for processing a glass substrate such as an LCD manufacturing apparatus and other substrate processing apparatuses.
- the film formation of the nitride film has been described as an example.
- the film type is not particularly limited, and can be applied to various film types such as an oxide film (SiO, etc.) and a metal oxide film.
- the present invention can be applied to substrate processing other than film formation processing.
- the present invention is applied to a substrate processing apparatus that supplies a processing gas to a substrate loaded in a substrate holder and processes the substrate.
- Substrate processing apparatus 200 ... Substrate (wafer), 201 ... Processing chamber, 207 ... Heater, 217 ... Boat (substrate holder), 231 ... Nozzle, 231a ... Gas outlet, 232 ... Nozzle, 232a ... Gas outlet, 281 ... Control unit (controller).
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Abstract
Description
Claims (12)
- 同一種類であって同一質量流量の処理ガスを、それぞれの上端から供給する第1のガス供給管と第2のガス供給管とを備え、 前記第1のガス供給管及び前記第2のガス供給管を介して、縦方向に配列された複数の基板を収容する処理室へ、前記複数の基板を処理するための処理ガスを供給するガス供給部であって、 前記複数の基板が配置される基板配置領域に対向する前記第1のガス供給管の長さをL1、前記第1のガス供給管の流路断面積をS1とし、前記基板配置領域に対向する前記第2のガス供給管の長さをL2、前記第2のガス供給管の流路断面積をS2としたとき、L1がL2よりも長く、かつS1がS2よりも小さく構成されるガス供給部。
- 前記第1のガス供給管及び前記第2のガス供給管を収容し、前記処理室と連通する複数の開口を有するバッファ室を備え、 前記第1のガス供給管及び前記第2のガス供給管から供給された処理ガスを、前記複数の開口から前記処理室内へ供給するよう構成される請求項1記載のガス供給部。
- 前記複数の開口が、前記基板配置領域に対向する位置に設けられ、 前記複数の開口から前記処理室に供給されるガスの流速が、同一になるよう構成される請求項2記載のガス供給部。
- 前記基板に対向する前記第1のガス供給管の内部をガスが流れる第1の時間と前記基板に対向する前記第2のガス供給管の内部をガスが流れる第2の時間が、同一になるよう構成される請求項3記載のガス供給部。
- 縦方向に配列された複数の基板を収容する処理室と、前記複数の基板を処理するための処理ガスをそれぞれの上端から前記処理室へ供給するための第1のガス供給管と第2のガス供給管とを備えるガス供給部と、前記ガス供給部を介して前記処理室に供給される前記処理ガスの流量を制御する制御部と、を含む基板処理装置であって、 前記ガス供給部は、前記複数の基板が配置される基板配置領域に対向する前記第1のガス供給管の長さをL1、前記第1のガス供給管の流路断面積をS1とし、前記基板配置領域に対向する前記第2のガス供給管の長さをL2、前記第2のガス供給管の流路断面積をS2としたとき、L1がL2よりも長く、かつS1がS2よりも小さく構成され、 前記制御部は、前記第1のガス供給管及び前記第2のガス供給管へ供給する処理ガスを同一種類であって同一質量流量とするよう制御する基板処理装置。
- 前記第1のガス供給管及び前記第2のガス供給管を収容し、前記処理室と連通する複数の開口を有するバッファ室を備え、 前記第1のガス供給管及び前記第2のガス供給管から供給された処理ガスを、前記複数の開口から前記処理室内へ供給するよう構成される請求項5記載の基板処理装置。
- 前記処理室内の圧力が、第2所定圧力以上で第1所定圧力未満であれば、 前記第1のガス供給管の流路断面積と前記第2のガス供給管の流路断面積は同じに構成される請求項5記載の基板処理装置。
- 前記処理室内の圧力が、第1所定圧力以上であれば、 前記ガス供給部は、前記第1のガス供給管の流路断面積を前記第2のガス供給管の流路断面積よりも小さく構成される請求項5記載の基板処理装置。
- 前記処理室内の圧力が、第2所定圧力未満であれば、 前記ガス供給部は、前記第1のガス供給管の流路断面積を前記第2のガス供給管の流路断面積よりも大きく構成される請求項5記載の基板処理装置。
- 前記基板配置領域を加熱する加熱部を有し、 前記第1のガス供給管及び前記第2のガス供給管の内部の原料ガスが、前記加熱部により分解されて基板処理に寄与する処理ガスとして生成され、 前記複数の開口から前記処理室内へ供給されるときの前記処理ガスの濃度が、前記基板配置領域の上下方向において同じになるよう構成される請求項5記載の基板処理装置。
- 前記基板配置領域がパターン付きの基板が配置される基板処理領域とベアウエハ領域とに区分され、
前記第1のガス供給管及び前記第2のガス供給管の上端が前記ベアウエハ領域に対向する位置に配置されるよう構成されている請求項5記載の基板処理装置。 - 縦方向に配列された複数の基板を処理するために同一種類であって同一質量流量の処理ガスを、前記複数の基板が配置される基板配置領域に対向する第1のガス供給管の長さをL1、流路断面積をS1とし、前記基板配置領域に対向する第2のガス供給管の長さをL2、流路断面積をS2としたとき、L1がL2よりも長く、かつS1がS2よりも小さくした前記第1のガス供給管と前記第2のガス供給管のそれぞれの上端から、前記基板配置領域に供給して前記複数の基板を処理する半導体装置の製造方法。
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CN110998806A (zh) * | 2018-03-23 | 2020-04-10 | 株式会社国际电气 | 基板处理装置、半导体装置的制造方法及程序 |
JP2021150410A (ja) * | 2020-03-17 | 2021-09-27 | 株式会社Kokusai Electric | 基板処理装置、及び半導体装置の製造方法 |
CN110998806B (zh) * | 2018-03-23 | 2024-05-31 | 株式会社国际电气 | 基板处理装置、半导体装置的制造方法及存储介质 |
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