JP2011181681A - 原子層堆積方法及び原子層堆積装置 - Google Patents
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Abstract
【課題】薄膜の形成に寄与しなかったガスを排気トラップにおいて十分にトラップすることができる原子層堆積方法を提供する。
【解決手段】基板上に薄膜を形成する原子層堆積方法であって、薄膜の原料である原料ガスを供給する原料ガス供給工程と、原料ガスと反応して薄膜を形成する反応ガスを供給する反応ガス供給工程と、反応ガスのプラズマを間欠的に発生させるプラズマ発生工程と、プラズマ発生工程の後に、成膜室から排気された反応ガスに活性ガスを間欠的に供給し、排気トラップにトラップさせる活性ガス供給工程と、を有することを特徴とする。
【選択図】図１
【解決手段】基板上に薄膜を形成する原子層堆積方法であって、薄膜の原料である原料ガスを供給する原料ガス供給工程と、原料ガスと反応して薄膜を形成する反応ガスを供給する反応ガス供給工程と、反応ガスのプラズマを間欠的に発生させるプラズマ発生工程と、プラズマ発生工程の後に、成膜室から排気された反応ガスに活性ガスを間欠的に供給し、排気トラップにトラップさせる活性ガス供給工程と、を有することを特徴とする。
【選択図】図１
Description
本発明は、基板上に薄膜を形成する原子層堆積方法、及び、原子層堆積装置に関する。
段差被覆性に優れ、薄膜を均一に形成する技術として、原子層堆積法（ＡＬＤ：Atomic Layer Deposition）が知られている。ＡＬＤ法では、形成しようとする薄膜を構成する元素を主成分とする２種類のガスを基板上に交互に供給し、基板上に原子層単位で薄膜を形成する。ＡＬＤ法では、表面反応の自己停止作用が用いられる。表面反応の自己停止作用とは、原料ガスを供給している間に、１層あるいは数層の原料ガスだけが基板表面に吸着し、余分な原料ガスは成膜に寄与しない作用である。そのため、ＡＬＤ法を用いて原子層単位で繰り返し基板上に薄膜を形成することにより、所望の膜厚の薄膜を形成することができる。
一般的なＣＶＤ（Chemical Vapor Deposition）法と比較して、ＡＬＤ法は段差被覆性と膜厚制御性に優れている。そのため、メモリ素子のキャパシタや、「high-kゲート」と呼ばれる絶縁膜の形成にＡＬＤ法を用いることが期待されている。
また、ＡＬＤ法では、３００℃以下の温度で絶縁膜を形成することができる。そのため、液晶ディスプレイなどのようにガラス基板を用いる表示装置において、薄膜トランジスタのゲート絶縁膜の形成にＡＬＤ法を用いることが期待されている。
また、ＡＬＤ法では、３００℃以下の温度で絶縁膜を形成することができる。そのため、液晶ディスプレイなどのようにガラス基板を用いる表示装置において、薄膜トランジスタのゲート絶縁膜の形成にＡＬＤ法を用いることが期待されている。
ＡＬＤ法は、反応の活性化手段の違いにより、熱ＡＬＤ法とプラズマＡＬＤ法とに大別される。熱ＡＬＤ法は、加熱により反応ガスの反応を促進する方法である。また、プラズマＡＬＤ法は、プラズマにより反応ガスの反応を促進する方法である。
ところで、ＣＶＤ法を用いて基板上に薄膜を形成する場合、薄膜の形成に寄与しなかったガスをトラップ機構によりトラップして回収する構成が知られている（特許文献１）。
プラズマＡＬＤ法を用いて基板上に薄膜を形成する場合、薄膜の形成に寄与しなかった反応ガスのラジカルは、排気トラップの上流や排気トラップ内で失活する。そのため、薄膜の形成に寄与しなかったガスを排気トラップにおいて十分にトラップすることができなかった。
本発明は、薄膜の形成に寄与しなかったガスを排気トラップにおいて十分にトラップすることができる原子層堆積方法、及び、原子層堆積装置を提供することを目的とする。
本発明の原子層堆積方法は、基板上に薄膜を形成する原子層堆積方法であって、前記薄膜の原料である原料ガスを供給する原料ガス供給工程と、前記原料ガスと反応して前記薄膜を形成する反応ガスを供給する反応ガス供給工程と、前記反応ガスのプラズマを間欠的に発生させるプラズマ発生工程と、前記プラズマ発生工程の後に、成膜室から排気された反応ガスに活性ガスを間欠的に供給し、排気トラップにトラップさせる活性ガス供給工程と、を有することを特徴とする。
また、前記反応ガスは酸素ガスであり、前記活性ガスは酸化ガスであることが好ましい。
本発明の原子層堆積装置は、基板上に薄膜を形成する原子層堆積装置であって、前記薄膜の原料である原料ガスを供給する原料ガス供給部と、前記原料ガスと反応して前記薄膜を形成する反応ガスを供給する反応ガス供給部と、前記反応ガスのプラズマを発生させるプラズマ発生部と、前記原料ガス、及び、前記反応ガスを排気する排気部と、を備え、前記排気部は、第１排気トラップと、第１排気トラップよりも上流側に設けられる第２排気トラップと、第１排気トラップと第２排気トラップとの間に活性ガスを供給する活性ガス供給部と、を備えることを特徴とする。
また、前記排気部は、前記活性ガス供給部が活性ガスを供給するタイミングを制御する制御部を備え、前記制御部は、前記プラズマ発生部が前記反応ガスのプラズマを発生させた後に、前記活性ガス供給部が活性ガスを供給するように、前記活性ガス供給部を制御することが好ましい。
本発明の原子層堆積装置は、基板上に薄膜を形成する原子層堆積装置であって、前記薄膜の原料である原料ガスを供給する原料ガス供給部と、前記原料ガスと反応して前記薄膜を形成する反応ガスを供給する反応ガス供給部と、前記反応ガスのプラズマを発生させるプラズマ発生部と、前記原料ガス、及び、前記反応ガスを排気する排気部と、を備え、前記排気部は、排気トラップと、前記排気トラップよりも上流に活性ガスを供給する活性ガス供給部と、前記活性ガス供給部が活性ガスを供給するタイミングを制御する制御部と、を備え、前記制御部は、前記プラズマ発生部が前記反応ガスのプラズマを発生させた後に、前記活性ガス供給部が活性ガスを供給するように、前記活性ガス供給部を制御することを特徴とする。
また、前記反応ガスは酸素ガスであり、前記活性ガスは酸化ガスであることが好ましい。
本発明の原子層堆積方法、及び、原子層堆積装置によれば、薄膜の形成に寄与しなかったガスを排気トラップにおいて十分にトラップすることができる。
以下、本発明の原子層堆積方法及び原子層堆積装置を、実施形態に基づいて説明する。
＜第１の実施形態＞
まず、図１を参照して、原子層堆積装置の概略構成を説明する。図１は、本実施形態の原子層堆積装置の一例を示す概略構成図である。本実施形態の原子層堆積装置は、原料ガスと反応ガス（酸素ガス）を供給することにより、基板上に原子層単位で酸化層を堆積し、薄膜を形成する。本実施形態の原子層堆積装置は、成膜室２００と、原料ガス供給部２１０と、反応ガス供給部２２０と、プラズマ発生部と、排気部３００と、を備える。
＜第１の実施形態＞
まず、図１を参照して、原子層堆積装置の概略構成を説明する。図１は、本実施形態の原子層堆積装置の一例を示す概略構成図である。本実施形態の原子層堆積装置は、原料ガスと反応ガス（酸素ガス）を供給することにより、基板上に原子層単位で酸化層を堆積し、薄膜を形成する。本実施形態の原子層堆積装置は、成膜室２００と、原料ガス供給部２１０と、反応ガス供給部２２０と、プラズマ発生部と、排気部３００と、を備える。
原料ガス供給部２１０は、成膜室２００の内部に原料ガスを供給する。図１に示される例では、原料ガス供給部２１０は、基板１００と水平な方向に原料ガスを供給する。原料ガス供給部２１０が供給する原料ガスは、例えば、ＴＭＡ（Tri-Methyl-Aluminum）である。
また、反応ガス供給部２２０は、成膜室２００の内部に反応ガスを供給する。図１に示される例では、反応ガス供給部２２０は、基板１００と水平な方向に反応ガスを供給する。反応ガス供給部２２０が供給する反応ガスは、例えば、酸素ガスである。
プラズマ発生部は、上部電極２３０と下部電極２３４とを備える。上部電極２３０と下部電極２３４は、反応ガス供給部２２０から成膜室２００の内部に供給される反応ガスのプラズマを発生させる。上部電極２３０は、整合器２３２に接続されている。また、下部電極２３４は、加熱部２３６を備える。
排気部３００は、成膜室２００の内部の原料ガスや反応ガスを排気する。図１に示されるように、排気部３００は、排気トラップ３１０と、真空ポンプ３２０と、活性ガス供給部３３０と、制御部３４０と、を備える。
排気トラップ３１０は、原料ガスや反応ガスをトラップする。排気トラップ３１０は、真空ポンプ３２０よりも上流側に配置される。排気トラップ３１０は、例えば、多孔質のセラミックで構成される。
真空ポンプ３２０は、例えば、ドライポンプである。
排気トラップ３１０は、原料ガスや反応ガスをトラップする。排気トラップ３１０は、真空ポンプ３２０よりも上流側に配置される。排気トラップ３１０は、例えば、多孔質のセラミックで構成される。
真空ポンプ３２０は、例えば、ドライポンプである。
活性ガス供給部３３０は、排気トラップ３１０の上流に活性ガスを供給する。活性ガスは、例えば、Ｏ３、Ｈ２Ｏなどの酸化ガスである。活性ガス供給部３３０にはバルブ３３２が設けられている。バルブ３３２を開閉することにより、排気トラップ３１０の上流に活性ガスを供給するタイミングを制御することができる。
制御部３４０は、バルブ３３２の開閉を制御する。これにより、制御部３４０は、活性ガス供給部３３０が活性ガスを供給するタイミングを制御することができる。制御部３４０がバルブ３３２を開閉する具体的なタイミングについては後述する。
以上が本実施形態の原子層堆積装置の概略構成である。
制御部３４０は、バルブ３３２の開閉を制御する。これにより、制御部３４０は、活性ガス供給部３３０が活性ガスを供給するタイミングを制御することができる。制御部３４０がバルブ３３２を開閉する具体的なタイミングについては後述する。
以上が本実施形態の原子層堆積装置の概略構成である。
（原子層堆積方法）
次に、図２、図３、図４を参照して、上述した原子層堆積装置を用いた原子層堆積方法について説明する。図２は、本実施形態の原子層堆積方法の一例を示すフローチャートである。また、図３（ａ）、（ｂ）は、基板１００の上に薄膜が形成される工程を示す図である。また、図４は、本実施形態の原子層堆積方法の一例を示すタイミングチャートである。図４の横軸は時間を示し、縦軸はガスを供給するタイミングやプラズマを発生させるタイミングを示す。
次に、図２、図３、図４を参照して、上述した原子層堆積装置を用いた原子層堆積方法について説明する。図２は、本実施形態の原子層堆積方法の一例を示すフローチャートである。また、図３（ａ）、（ｂ）は、基板１００の上に薄膜が形成される工程を示す図である。また、図４は、本実施形態の原子層堆積方法の一例を示すタイミングチャートである。図４の横軸は時間を示し、縦軸はガスを供給するタイミングやプラズマを発生させるタイミングを示す。
まず、原料ガス供給部２１０が、成膜室２００の内部に原料ガス１１０を供給する（ステップＳ１０１）。原料ガス供給部２１０は、例えば、０．１秒間、成膜室２００の内部に原料ガス１１０を供給する。図３（ａ）に示されるように、ステップＳ１０１によって、成膜室２００の内部に原料ガス１１０が供給され、基板１００の上に原料ガス１１０が吸着して吸着層１０２が形成される。
原料ガス供給部２１０が原料ガス１１０の供給を停止すると、基板１００の上に吸着していない原料ガス１１０が成膜室２００からパージされる。
原料ガス供給部２１０が原料ガス１１０の供給を停止すると、基板１００の上に吸着していない原料ガス１１０が成膜室２００からパージされる。
また、反応ガス供給部２２０が、成膜室２００の内部に反応ガス１１２を供給する（ステップＳ１０２）。反応ガス供給部２２０が成膜室２００の内部に反応ガス１１２を供給するタイミングは、ステップＳ１０１の後でもよいし、ステップＳ１０１と同時であってもよい。図４に示されるように、本実施形態では、反応ガス供給部２２０は、常に成膜室２００の内部に反応ガス１１２を供給する。
次に、プラズマ発生部（上部電極２３０、下部電極２３４）が、成膜室２００の内部に供給された反応ガス（酸素ガス）１１２のプラズマを発生させる（ステップＳ１０３）。プラズマ発生部は、例えば、１秒間、反応ガス１１２のプラズマを発生させる。図３（ｂ）に示されるように、プラズマ発生部が反応ガス１１２のプラズマを発生させることにより、反応ガス１１２が吸着層１０２と反応し、酸化層１０４が形成される。原料ガス１１０がＴＭＡである場合、酸化層１０４は酸化アルミニウムである。
次に、活性ガス供給部３３０が活性ガスを供給する（ステップＳ１０４）。活性ガス供給部３３０は、例えば、０．１秒間、活性ガスを供給する。本実施形態では、活性ガス供給部３３０は、Ｏ３を供給する。活性ガス供給部３３０が活性ガスを供給するタイミングは、制御部３４０によって制御される。
以上説明したステップＳ１０１〜Ｓ１０４により、基板１００の上に一原子層分の酸化層１０４が形成される。以下、ステップＳ１０１〜Ｓ１０４を所定回数繰り返すことにより、所望の膜厚の酸化層１０４を形成することができる。また、ステップＳ１０１〜Ｓ１０４を繰り返すことにより、プラズマ発生部は、成膜室２００の内部に供給された反応ガス１１２のプラズマを間欠的に発生させる。また、ステップＳ１０１〜Ｓ１０４を繰り返すことにより、活性ガス供給部３３０は、活性ガスを間欠的に供給する。
以上説明したように、本実施形態では、プラズマ発生部がプラズマを発生させた後に、成膜室２００から排気された反応ガス１１２に活性ガスを供給し、排気トラップ３１０にトラップさせる。そのため、薄膜の形成に寄与しなかった反応ガス１１２が排気トラップ３１０の内部で失活するのを抑制することができる。その結果、薄膜の形成に寄与しなかったガスを排気トラップ３１０において十分にトラップすることができる。
また、本実施形態では、プラズマ発生部がプラズマを発生させた後の所定期間、活性ガス供給部３３０が間欠的に活性ガスを供給する。そのため、例えば、活性ガス供給部が連続的に活性ガスを供給する場合に比べて、排気トラップ３１０よりも上流側の排気管内に薄膜が形成されるのを抑制することができる。
なお、上述した実施形態では、プラズマ発生部が平行に対向する２つの電極（上部電極２３０、下部電極２３４）である容量結合型（ＣＣＰ：Capacitively Coupled Plasma）の例について説明したが、本発明はこれに限定されるものではない。例えば、プラズマ発生部が複数のモノポールアンテナを用いてプラズマを発生させる場合にも、本発明を適用することができる。
また、上述した実施形態では、原子層堆積装置が基板上に原子層単位で酸化層を堆積し、薄膜を形成する例について説明したが、本発明はこれに限定されるものではない。例えば、反応ガス供給部２２０が窒素ガスを供給し、基板上に原子層単位で窒化層を堆積し、薄膜を形成する場合にも、本発明を適用することができる。
＜第２の実施形態＞
次に、図５を参照して、第２の実施形態の原子層堆積装置の概略構成を説明する。図５は、本実施形態の原子層堆積装置の一例を示す概略構成図である。本実施形態の原子層堆積装置の基本的な構成は、上述した第１の実施形態と同様である。そのため、以下の説明では、第１の実施形態と同様の部分の説明は省略し、第１の実施形態と異なる部分について説明する。
次に、図５を参照して、第２の実施形態の原子層堆積装置の概略構成を説明する。図５は、本実施形態の原子層堆積装置の一例を示す概略構成図である。本実施形態の原子層堆積装置の基本的な構成は、上述した第１の実施形態と同様である。そのため、以下の説明では、第１の実施形態と同様の部分の説明は省略し、第１の実施形態と異なる部分について説明する。
本実施形態の原子層堆積装置は、成膜室２００と、原料ガス供給部２１０と、反応ガス供給部２２０と、プラズマ発生部と、排気部３００と、を備える。原料ガス供給部２１０、反応ガス供給部２２０、プラズマ発生部の構成は、第１の実施形態と同様である。
排気部３００は、成膜室２００の内部の原料ガスや反応ガスを排気する。図５に示されるように、排気部３００は、排気トラップ３１０，３１２と、真空ポンプ３２０と、活性ガス供給部３３０と、制御部３４０と、を備える。以下、排気トラップ３１０を「第１排気トラップ」と定義する。また、第１排気トラップ３１０よりも上流側に設けられる排気トラップ３１２を「第２排気トラップ」と定義する。
第１排気トラップ３１０、第２排気トラップ３１２は、真空ポンプ３２０よりも上流側に配置される。第１排気トラップ３１０、第２排気トラップ３１２は、例えば、多孔質のセラミックで構成される。
真空ポンプ３２０は、例えば、ドライポンプである。
第１排気トラップ３１０、第２排気トラップ３１２は、真空ポンプ３２０よりも上流側に配置される。第１排気トラップ３１０、第２排気トラップ３１２は、例えば、多孔質のセラミックで構成される。
真空ポンプ３２０は、例えば、ドライポンプである。
活性ガス供給部３３０は、第１排気トラップ３１０と第２排気トラップ３１２の間に活性ガスを供給する。活性ガスは、例えば、Ｏ３、Ｈ２Ｏなどの酸化ガスである。活性ガス供給部３３０にはバルブ３３２が設けられている。バルブ３３２を開閉することにより、排気トラップ３１０の上流に活性ガスを供給するタイミングを制御することができる。
制御部３４０は、バルブ３３２の開閉を制御する。これにより、制御部３４０は、活性ガス供給部３３０が活性ガスを供給するタイミングを制御することができる。
以上が本実施形態の原子層堆積装置の概略構成である。
制御部３４０は、バルブ３３２の開閉を制御する。これにより、制御部３４０は、活性ガス供給部３３０が活性ガスを供給するタイミングを制御することができる。
以上が本実施形態の原子層堆積装置の概略構成である。
本実施形態の原子層堆積装置の活性ガス供給部３３０は、第１排気トラップ３１０と第２排気トラップ３１２の間に活性ガスを供給する。そのため、薄膜の形成に寄与しなかった反応ガス１１２が第２排気トラップ３１２の上流で失活した場合、活性ガス供給部３３０から供給された活性ガスにより、第１排気トラップ３１０が薄膜の形成に寄与しなかった原料ガスをトラップすることができる。
ここで、第１の実施形態と同様の原子層堆積方法を本実施形態に適用することができる。
なお、第１の実施形態と異なり、本実施形態の活性ガス供給部３３０は、第１排気トラップ３１０と第２排気トラップ３１２の間に活性ガスを供給する。そのため、本実施形態は、第１の実施形態のように、活性ガス供給部３３０が活性ガスを間欠的に供給する例に限定されるものではない。例えば、活性ガス供給部３３０が活性ガスを連続的に供給する場合にも、本発明を適用することができる。
なお、第１の実施形態と異なり、本実施形態の活性ガス供給部３３０は、第１排気トラップ３１０と第２排気トラップ３１２の間に活性ガスを供給する。そのため、本実施形態は、第１の実施形態のように、活性ガス供給部３３０が活性ガスを間欠的に供給する例に限定されるものではない。例えば、活性ガス供給部３３０が活性ガスを連続的に供給する場合にも、本発明を適用することができる。
以上、本発明の原子層堆積方法、及び、原子層堆積装置について詳細に説明したが、本発明は上記実施形態に限定されるものではない。また、本発明の主旨を逸脱しない範囲において、種々の改良や変更をしてもよいのはもちろんである。
１００ 基板
１０２ 吸着層
１０４ 酸化層
１１０ 原料ガス
１１２ 反応ガス
２００ 成膜室
２１０ 原料ガス供給部
２２０ 反応ガス供給部
２３０ 上部電極
２３２ 整合器
２３４ 下部電極
２３６ 加熱部
３００ 排気部
３１０，３１２ 排気トラップ
３２０ 真空ポンプ
３３０ 活性ガス供給部
３３２ バルブ
３４０ 制御部
１０２ 吸着層
１０４ 酸化層
１１０ 原料ガス
１１２ 反応ガス
２００ 成膜室
２１０ 原料ガス供給部
２２０ 反応ガス供給部
２３０ 上部電極
２３２ 整合器
２３４ 下部電極
２３６ 加熱部
３００ 排気部
３１０，３１２ 排気トラップ
３２０ 真空ポンプ
３３０ 活性ガス供給部
３３２ バルブ
３４０ 制御部
Claims (6)
- 基板上に薄膜を形成する原子層堆積方法であって、
前記薄膜の原料である原料ガスを供給する原料ガス供給工程と、
前記原料ガスと反応して前記薄膜を形成する反応ガスを供給する反応ガス供給工程と、
前記反応ガスのプラズマを間欠的に発生させるプラズマ発生工程と、
前記プラズマ発生工程の後に、成膜室から排気された反応ガスに活性ガスを間欠的に供給し、排気トラップにトラップさせる活性ガス供給工程と、
を有することを特徴とする原子層堆積方法。 - 前記反応ガスは酸素ガスであり、
前記活性ガスは酸化ガスである、請求項１に記載の原子層堆積方法。 - 基板上に薄膜を形成する原子層堆積装置であって、
前記薄膜の原料である原料ガスを供給する原料ガス供給部と、
前記原料ガスと反応して前記薄膜を形成する反応ガスを供給する反応ガス供給部と、
前記反応ガスのプラズマを発生させるプラズマ発生部と、
前記原料ガス、及び、前記反応ガスを排気する排気部と、を備え、
前記排気部は、
第１排気トラップと、
第１排気トラップよりも上流側に設けられる第２排気トラップと、
第１排気トラップと第２排気トラップとの間に活性ガスを供給する活性ガス供給部と、
を備えることを特徴とする原子層堆積装置。 - 前記排気部は、前記活性ガス供給部が活性ガスを供給するタイミングを制御する制御部を備え、
前記制御部は、前記プラズマ発生部が前記反応ガスのプラズマを発生させた後に、前記活性ガス供給部が活性ガスを供給するように、前記活性ガス供給部を制御する、請求項３に記載の原子層堆積装置。 - 基板上に薄膜を形成する原子層堆積装置であって、
前記薄膜の原料である原料ガスを供給する原料ガス供給部と、
前記原料ガスと反応して前記薄膜を形成する反応ガスを供給する反応ガス供給部と、
前記反応ガスのプラズマを発生させるプラズマ発生部と、
前記原料ガス、及び、前記反応ガスを排気する排気部と、を備え、
前記排気部は、
排気トラップと、
前記排気トラップよりも上流に活性ガスを供給する活性ガス供給部と、
前記活性ガス供給部が活性ガスを供給するタイミングを制御する制御部と、
を備え、
前記制御部は、前記プラズマ発生部が前記反応ガスのプラズマを発生させた後に、前記活性ガス供給部が活性ガスを供給するように、前記活性ガス供給部を制御することを特徴とする原子層堆積装置。 - 前記反応ガスは酸素ガスであり、
前記活性ガスは酸化ガスである、請求項３乃至５のいずれかに記載の原子層堆積装置。
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