DE10261362B8 - Substrat-Halter - Google Patents

Substrat-Halter Download PDF

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Publication number
DE10261362B8
DE10261362B8 DE10261362A DE10261362A DE10261362B8 DE 10261362 B8 DE10261362 B8 DE 10261362B8 DE 10261362 A DE10261362 A DE 10261362A DE 10261362 A DE10261362 A DE 10261362A DE 10261362 B8 DE10261362 B8 DE 10261362B8
Authority
DE
Germany
Prior art keywords
substrate holder
holder
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE10261362A
Other languages
English (en)
Other versions
DE10261362B4 (de
DE10261362A1 (de
Inventor
Alexander Walter
Volker Dr. Härle
Matthias Dr. Peter
Stefan Dr. Bader
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Priority to DE10261362A priority Critical patent/DE10261362B8/de
Priority to TW092137055A priority patent/TWI292443B/zh
Priority to US10/748,305 priority patent/US20040187790A1/en
Priority to CNB2003101249827A priority patent/CN1311107C/zh
Publication of DE10261362A1 publication Critical patent/DE10261362A1/de
Publication of DE10261362B4 publication Critical patent/DE10261362B4/de
Priority to US12/154,897 priority patent/US20080276869A1/en
Application granted granted Critical
Publication of DE10261362B8 publication Critical patent/DE10261362B8/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
DE10261362A 2002-12-30 2002-12-30 Substrat-Halter Expired - Fee Related DE10261362B8 (de)

Priority Applications (5)

Application Number Priority Date Filing Date Title
DE10261362A DE10261362B8 (de) 2002-12-30 2002-12-30 Substrat-Halter
TW092137055A TWI292443B (en) 2002-12-30 2003-12-26 Substrate-holder
US10/748,305 US20040187790A1 (en) 2002-12-30 2003-12-30 Substrate holder
CNB2003101249827A CN1311107C (zh) 2002-12-30 2003-12-30 基片支架
US12/154,897 US20080276869A1 (en) 2002-12-30 2008-05-28 Substrate holder

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE10261362A DE10261362B8 (de) 2002-12-30 2002-12-30 Substrat-Halter

Publications (3)

Publication Number Publication Date
DE10261362A1 DE10261362A1 (de) 2004-07-15
DE10261362B4 DE10261362B4 (de) 2008-05-21
DE10261362B8 true DE10261362B8 (de) 2008-08-28

Family

ID=32519436

Family Applications (1)

Application Number Title Priority Date Filing Date
DE10261362A Expired - Fee Related DE10261362B8 (de) 2002-12-30 2002-12-30 Substrat-Halter

Country Status (4)

Country Link
US (2) US20040187790A1 (de)
CN (1) CN1311107C (de)
DE (1) DE10261362B8 (de)
TW (1) TWI292443B (de)

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DE10261362B4 (de) 2008-05-21
US20080276869A1 (en) 2008-11-13
TW200416309A (en) 2004-09-01
TWI292443B (en) 2008-01-11
CN1558001A (zh) 2004-12-29
DE10261362A1 (de) 2004-07-15
US20040187790A1 (en) 2004-09-30

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