JP6847610B2 - 熱処理装置 - Google Patents
熱処理装置 Download PDFInfo
- Publication number
- JP6847610B2 JP6847610B2 JP2016179382A JP2016179382A JP6847610B2 JP 6847610 B2 JP6847610 B2 JP 6847610B2 JP 2016179382 A JP2016179382 A JP 2016179382A JP 2016179382 A JP2016179382 A JP 2016179382A JP 6847610 B2 JP6847610 B2 JP 6847610B2
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- Prior art keywords
- semiconductor wafer
- chamber
- heat treatment
- susceptor
- treatment apparatus
- Prior art date
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- 238000010438 heat treatment Methods 0.000 title claims description 84
- 229910052736 halogen Inorganic materials 0.000 claims description 66
- 150000002367 halogens Chemical class 0.000 claims description 66
- 230000007246 mechanism Effects 0.000 claims description 62
- 239000007789 gas Substances 0.000 claims description 58
- 239000000758 substrate Substances 0.000 claims description 40
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 24
- 230000002093 peripheral effect Effects 0.000 claims description 19
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 13
- 229910021529 ammonia Inorganic materials 0.000 claims description 12
- 239000010453 quartz Substances 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 230000001678 irradiating effect Effects 0.000 claims description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 239000010935 stainless steel Substances 0.000 claims description 4
- 229910001220 stainless steel Inorganic materials 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 description 130
- 238000012546 transfer Methods 0.000 description 66
- 238000012545 processing Methods 0.000 description 19
- 230000005855 radiation Effects 0.000 description 18
- 239000012535 impurity Substances 0.000 description 16
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 13
- 238000000034 method Methods 0.000 description 12
- 229910052724 xenon Inorganic materials 0.000 description 12
- 239000002245 particle Substances 0.000 description 10
- 238000000137 annealing Methods 0.000 description 9
- 239000012298 atmosphere Substances 0.000 description 8
- 239000011521 glass Substances 0.000 description 6
- 238000009826 distribution Methods 0.000 description 5
- 239000012299 nitrogen atmosphere Substances 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 230000004913 activation Effects 0.000 description 4
- 230000003028 elevating effect Effects 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000005469 synchrotron radiation Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/0033—Heating devices using lamps
- H05B3/0038—Heating devices using lamps for industrial applications
- H05B3/0047—Heating devices using lamps for industrial applications for semiconductor manufacture
Description
3 制御部
4 ハロゲン加熱部
5 フラッシュ加熱部
6 チャンバー
61 チャンバー側部
63 上側チャンバー窓
64 下側チャンバー窓
65 上部空間
67 下部空間
68,168 支持部
69 スリット
74 サセプタ
75 保持プレート
77 基板支持ピン
81 第1ガス供給機構
85 第2ガス供給機構
90 排気機構
120 放射温度計
FL フラッシュランプ
HL ハロゲンランプ
W 半導体ウェハー
Claims (5)
- 基板にフラッシュ光を照射することによって該基板を加熱する熱処理装置であって、
基板を収容するチャンバーと、
前記チャンバーの内壁面に取り付けられたリング状の支持部材と、
前記支持部材に支持された板状の石英のサセプタと、
前記サセプタに支持された基板にフラッシュ光を照射するフラッシュランプと、
前記サセプタおよび前記支持部材によって仕切られた前記チャンバー内の上部空間にアンモニアを供給する第1ガス供給機構と、
前記サセプタおよび前記支持部材によって仕切られた前記チャンバー内の下部空間に窒素を供給する第2ガス供給機構と、
を備えることを特徴とする熱処理装置。 - 請求項1記載の熱処理装置において、
前記支持部材は、前記チャンバーの内壁面の上部を覆うように着脱自在に取り付けられることを特徴とする熱処理装置。 - 請求項2記載の熱処理装置において、
前記支持部材の内周面は鏡面とされることを特徴とする熱処理装置。 - 請求項1から請求項3のいずれかに記載の熱処理装置において、
前記支持部材は、アルミニウムまたはステンレススチールにて形成されることを特徴とする熱処理装置。 - 請求項1から請求項4のいずれかに記載の熱処理装置において、
前記サセプタに支持された基板に前記フラッシュランプとは反対側から光を照射するハロゲンランプをさらに備えることを特徴とする熱処理装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016179382A JP6847610B2 (ja) | 2016-09-14 | 2016-09-14 | 熱処理装置 |
TW106118987A TWI642136B (zh) | 2016-09-14 | 2017-06-08 | 熱處理裝置 |
US15/649,052 US10950472B2 (en) | 2016-09-14 | 2017-07-13 | Light-irradiation thermal treatment apparatus |
CN201710649400.9A CN107818926B (zh) | 2016-09-14 | 2017-08-01 | 热处理装置 |
US17/167,121 US11881420B2 (en) | 2016-09-14 | 2021-02-04 | Light-irradiation thermal treatment apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016179382A JP6847610B2 (ja) | 2016-09-14 | 2016-09-14 | 熱処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018046141A JP2018046141A (ja) | 2018-03-22 |
JP6847610B2 true JP6847610B2 (ja) | 2021-03-24 |
Family
ID=61560715
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016179382A Active JP6847610B2 (ja) | 2016-09-14 | 2016-09-14 | 熱処理装置 |
Country Status (4)
Country | Link |
---|---|
US (2) | US10950472B2 (ja) |
JP (1) | JP6847610B2 (ja) |
CN (1) | CN107818926B (ja) |
TW (1) | TWI642136B (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6847610B2 (ja) * | 2016-09-14 | 2021-03-24 | 株式会社Screenホールディングス | 熱処理装置 |
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US20220322492A1 (en) * | 2021-04-06 | 2022-10-06 | Applied Materials, Inc. | Epitaxial deposition chamber |
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US20180076062A1 (en) | 2018-03-15 |
CN107818926A (zh) | 2018-03-20 |
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JP2018046141A (ja) | 2018-03-22 |
US10950472B2 (en) | 2021-03-16 |
TW201812978A (zh) | 2018-04-01 |
US20210159099A1 (en) | 2021-05-27 |
US11881420B2 (en) | 2024-01-23 |
CN107818926B (zh) | 2022-03-08 |
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