JP4530933B2 - 基板熱処理装置 - Google Patents
基板熱処理装置 Download PDFInfo
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- JP4530933B2 JP4530933B2 JP2005211109A JP2005211109A JP4530933B2 JP 4530933 B2 JP4530933 B2 JP 4530933B2 JP 2005211109 A JP2005211109 A JP 2005211109A JP 2005211109 A JP2005211109 A JP 2005211109A JP 4530933 B2 JP4530933 B2 JP 4530933B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68778—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting substrates others than wafers, e.g. chips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Description
近年の半導体製造プロセスにおけるパターンルールの微細化が進むに従い、装置に基板を投入してから、熱処理の目標温度にまでの昇温速度を速くして、スループットを高速化することが望まれている。しかし、これだけではなく、温度分布が不安定になりやすい目標温度に至るまでの昇温過程を極力短時間化し、かつ過渡的な基板の面内温度分布を改善することも求められている。そのためには、カバーを温調し、かつベークプレートと接近させる必要があるが、それぞれが個別に温度制御を行っている関係上、相互の熱干渉が発生し、双方の温度制御が困難となったり、ベークプレートから強く熱せられるので、カバー内の温度が目標温度よりも上昇し過ぎたりするという問題がある。
すなわち、請求項1に記載の発明は、ベークプレートに基板を載置して基板に対して熱処理を行う基板熱処理装置において、前記ベークプレートの外周部に配設された凹部と、前記ベークプレートの上方に配置され、ベークプレートの熱処理雰囲気を確保するカバーと、前記カバーを温調するカバー温調手段と、前記カバーと前記ベークプレートとの間隔を調整する調整手段と、基板を搬送する際の搬送間隔と、前記搬送間隔よりも狭く、前記ベークプレートに接近した遷移間隔と、前記搬送間隔より狭くかつ前記遷移間隔より広く、かつ、前記カバーの下部が前記凹部に収容された定常間隔とにわたって前記調整手段を介して間隔をその順に調整する制御手段と、を備えていることを特徴とするものである。
図1は、実施例に係る基板熱処理装置の概略構成を示す図である。
回転軸が縦置きされたモータ27を備え、その回転軸には螺軸29が連動連結されている。この螺軸は29は、カバー21の上部周縁に付設された取付片31が螺合されている。よって、モータ27を駆動すると、取付片31が螺軸29に沿って昇降し、カバー21が上記の各位置に昇降される。
1 … ベークプレート
3 … 発熱体
5 … 伝熱部
9 … 支持ピン
15 … エアシリンダ
19 … 球体
ms … 微小空間
21 … カバー
25 … パンチングボード
26 … ヒータ
27 … モータ
29 … 螺軸
33 … CPU
35 … メモリ
37 … タイマ
h1 … 搬送位置
h2 … 遷移位置
h3 … 定常位置
sp1 … 搬送間隔
sp2 … 遷移間隔
sp3 … 定常間隔
Claims (5)
- ベークプレートに基板を載置して基板に対して熱処理を行う基板熱処理装置において、
前記ベークプレートの外周部に配設された凹部と、
前記ベークプレートの上方に配置され、温調されてベークプレートの熱処理雰囲気を確保するカバーと、
前記カバーと前記ベークプレートとの間隔を調整する調整手段と、
基板を搬送する際の搬送間隔と、前記搬送間隔よりも狭く、前記ベークプレートに接近した遷移間隔と、前記搬送間隔より狭くかつ前記遷移間隔より広く、かつ、前記カバーの下部が前記凹部に収容された定常間隔とにわたって前記調整手段を介して間隔をその順に調整する制御手段と、
を備えていることを特徴とする基板熱処理装置。 - 請求項1に記載の基板熱処理装置において、
前記調整手段は、前記遷移間隔として、前記カバーの下面と、前記ベークプレートに載置された基板の上面との間隔が0.5〜4mmとなるように予め設定されていることを特徴とする基板熱処理装置。 - 請求項1または2に記載の基板熱処理装置において、
前記調整手段は、前記定常間隔として、前記カバーの下面と、前記ベークプレートに載置された基板の上面との間隔が5〜20mmとなるように予め設定されていることを特徴とする基板熱処理装置。 - 請求項1から3のいずれかに記載の基板熱処理装置において、
前記制御手段は、予め決められた処理手順に基づく時間間隔に応じて、熱処理の開始後に前記遷移間隔及び前記定常間隔の順に調整することを特徴とする基板熱処理装置。 - 請求項1から3のいずれかに記載の基板熱処理装置において、
前記制御手段は、熱処理の開始後に、目標温度と現在値との差分が大きい場合には前記遷移間隔に調整し、前記差分が所定値内である場合に前記定常間隔に調整することを特徴とする基板熱処理装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005211109A JP4530933B2 (ja) | 2005-07-21 | 2005-07-21 | 基板熱処理装置 |
US11/489,339 US7467901B2 (en) | 2005-07-21 | 2006-07-19 | Substrate heat treatment apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005211109A JP4530933B2 (ja) | 2005-07-21 | 2005-07-21 | 基板熱処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007027617A JP2007027617A (ja) | 2007-02-01 |
JP4530933B2 true JP4530933B2 (ja) | 2010-08-25 |
Family
ID=37677878
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005211109A Expired - Fee Related JP4530933B2 (ja) | 2005-07-21 | 2005-07-21 | 基板熱処理装置 |
Country Status (2)
Country | Link |
---|---|
US (1) | US7467901B2 (ja) |
JP (1) | JP4530933B2 (ja) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4811860B2 (ja) * | 2006-05-10 | 2011-11-09 | 東京エレクトロン株式会社 | 熱処理方法、そのプログラム及び熱処理装置 |
US7942969B2 (en) * | 2007-05-30 | 2011-05-17 | Applied Materials, Inc. | Substrate cleaning chamber and components |
US10242890B2 (en) * | 2011-08-08 | 2019-03-26 | Applied Materials, Inc. | Substrate support with heater |
CN105810628A (zh) * | 2014-12-31 | 2016-07-27 | 南京瀚宇彩欣科技有限责任公司 | 衬底支持装置 |
CN106935540B (zh) * | 2015-12-29 | 2019-08-06 | 中微半导体设备(上海)股份有限公司 | 晶片顶升装置及其顶升方法 |
US10272510B2 (en) * | 2016-01-14 | 2019-04-30 | United Technologies Corporation | Electrical discharge machining apparatus |
JP6697089B2 (ja) * | 2016-03-18 | 2020-05-20 | エーシーエム リサーチ (シャンハイ) インコーポレーテッド | 基板熱処理装置 |
JP6847610B2 (ja) * | 2016-09-14 | 2021-03-24 | 株式会社Screenホールディングス | 熱処理装置 |
JP6789096B2 (ja) * | 2016-12-22 | 2020-11-25 | 東京エレクトロン株式会社 | 熱処理装置、熱処理方法及びコンピュータ記憶媒体 |
WO2020102085A1 (en) | 2018-11-14 | 2020-05-22 | Lam Research Corporation | Methods for making hard masks useful in next-generation lithography |
CN116705595A (zh) | 2020-01-15 | 2023-09-05 | 朗姆研究公司 | 用于光刻胶粘附和剂量减少的底层 |
CN115598943A (zh) * | 2020-11-13 | 2023-01-13 | 朗姆研究公司(Us) | 用于干法去除光致抗蚀剂的处理工具 |
CN114507003B (zh) * | 2022-02-10 | 2024-07-09 | 河南旭阳光电科技有限公司 | 玻璃板生产线断板控制装置和方法 |
Citations (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61119341U (ja) * | 1985-01-10 | 1986-07-28 | ||
JPS6381924A (ja) * | 1986-09-26 | 1988-04-12 | Hitachi Ltd | 加熱処理装置 |
JPH03270012A (ja) * | 1990-03-19 | 1991-12-02 | Fujitsu Ltd | 半導体製造装置 |
JPH06181173A (ja) * | 1992-12-11 | 1994-06-28 | Nec Corp | 加熱装置 |
JPH0778749A (ja) * | 1993-09-06 | 1995-03-20 | Tokyo Electron Ltd | 熱処理装置 |
JPH07201719A (ja) * | 1993-12-31 | 1995-08-04 | Tokyo Electron Ltd | 熱処理装置及び熱処理方法 |
JPH098049A (ja) * | 1995-06-21 | 1997-01-10 | Dainippon Screen Mfg Co Ltd | 基板加熱装置 |
JPH10189429A (ja) * | 1996-12-20 | 1998-07-21 | Dainippon Screen Mfg Co Ltd | 基板加熱装置 |
JP2000003843A (ja) * | 1998-06-12 | 2000-01-07 | Dainippon Screen Mfg Co Ltd | 基板熱処理装置 |
JP2000068176A (ja) * | 1998-08-20 | 2000-03-03 | Tokyo Electron Ltd | 基板温調装置及び基板温調方法 |
JP2000091181A (ja) * | 1998-09-11 | 2000-03-31 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
JP2005032990A (ja) * | 2003-07-14 | 2005-02-03 | Canon Sales Co Inc | 熱処理装置及び熱処理方法 |
JP2006021138A (ja) * | 2004-07-08 | 2006-01-26 | Sharp Corp | 塗布膜の乾燥方法及び乾燥装置 |
-
2005
- 2005-07-21 JP JP2005211109A patent/JP4530933B2/ja not_active Expired - Fee Related
-
2006
- 2006-07-19 US US11/489,339 patent/US7467901B2/en not_active Expired - Fee Related
Patent Citations (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61119341U (ja) * | 1985-01-10 | 1986-07-28 | ||
JPS6381924A (ja) * | 1986-09-26 | 1988-04-12 | Hitachi Ltd | 加熱処理装置 |
JPH03270012A (ja) * | 1990-03-19 | 1991-12-02 | Fujitsu Ltd | 半導体製造装置 |
JPH06181173A (ja) * | 1992-12-11 | 1994-06-28 | Nec Corp | 加熱装置 |
JPH0778749A (ja) * | 1993-09-06 | 1995-03-20 | Tokyo Electron Ltd | 熱処理装置 |
JPH07201719A (ja) * | 1993-12-31 | 1995-08-04 | Tokyo Electron Ltd | 熱処理装置及び熱処理方法 |
JPH098049A (ja) * | 1995-06-21 | 1997-01-10 | Dainippon Screen Mfg Co Ltd | 基板加熱装置 |
JPH10189429A (ja) * | 1996-12-20 | 1998-07-21 | Dainippon Screen Mfg Co Ltd | 基板加熱装置 |
JP2000003843A (ja) * | 1998-06-12 | 2000-01-07 | Dainippon Screen Mfg Co Ltd | 基板熱処理装置 |
JP2000068176A (ja) * | 1998-08-20 | 2000-03-03 | Tokyo Electron Ltd | 基板温調装置及び基板温調方法 |
JP2000091181A (ja) * | 1998-09-11 | 2000-03-31 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
JP2005032990A (ja) * | 2003-07-14 | 2005-02-03 | Canon Sales Co Inc | 熱処理装置及び熱処理方法 |
JP2006021138A (ja) * | 2004-07-08 | 2006-01-26 | Sharp Corp | 塗布膜の乾燥方法及び乾燥装置 |
Also Published As
Publication number | Publication date |
---|---|
US7467901B2 (en) | 2008-12-23 |
JP2007027617A (ja) | 2007-02-01 |
US20070017386A1 (en) | 2007-01-25 |
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