JP4268069B2 - 縦型熱処理装置 - Google Patents
縦型熱処理装置 Download PDFInfo
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- JP4268069B2 JP4268069B2 JP2004046729A JP2004046729A JP4268069B2 JP 4268069 B2 JP4268069 B2 JP 4268069B2 JP 2004046729 A JP2004046729 A JP 2004046729A JP 2004046729 A JP2004046729 A JP 2004046729A JP 4268069 B2 JP4268069 B2 JP 4268069B2
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- 238000010438 heat treatment Methods 0.000 title claims description 45
- 238000012545 processing Methods 0.000 claims description 104
- 230000002093 peripheral effect Effects 0.000 claims description 42
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 26
- 239000010453 quartz Substances 0.000 claims description 25
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 16
- 239000003507 refrigerant Substances 0.000 claims description 14
- 238000001816 cooling Methods 0.000 claims description 11
- 239000007788 liquid Substances 0.000 description 20
- 239000007864 aqueous solution Substances 0.000 description 15
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 10
- 238000005260 corrosion Methods 0.000 description 7
- 230000007797 corrosion Effects 0.000 description 7
- 239000007789 gas Substances 0.000 description 7
- 238000004140 cleaning Methods 0.000 description 6
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 6
- 229920006015 heat resistant resin Polymers 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 230000005855 radiation Effects 0.000 description 5
- 238000007789 sealing Methods 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 239000000498 cooling water Substances 0.000 description 3
- 230000000630 rising effect Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 239000006227 byproduct Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000005108 dry cleaning Methods 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- -1 for example Substances 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000010943 off-gassing Methods 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 229910001026 inconel Inorganic materials 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/10—Reaction chambers; Selection of materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/2001—Maintaining constant desired temperature
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Description
請求項1の発明によれば、下端が開口された石英製の処理容器と、該処理容器の下方に昇降可能に設けられ、処理容器の開口端を閉塞する蓋体と、該蓋体上に設けられ複数枚の被処理体を多段に保持する保持具と、前記処理容器の周囲に設けられた加熱手段とを備えた縦型熱処理装置において、前記蓋体は、前記処理容器の開口端に当接される石英製の内側蓋部と、該内側蓋部の外面を覆う金属製の外側蓋部とからなり、前記内側蓋部の上端外周部を、前記処理容器の開口端外周部よりも内側に形成し、前記外側蓋部の上端内周部に、前記内側蓋部の上端外周面と前記処理容器の開口端下面とに接してこれらの間をシールするOリングを設けられ、前記内側蓋部と前記外側蓋部の間には内側蓋部を加温する面状のヒーターが内側蓋部と非接触で設けられているため、蓋体の腐食の問題及びOリングからのアウトガスの問題を解消できると共に、内側蓋部とヒーター間の摺動による発塵の問題を防止することができる。
2 処理容器
2a 開口端
4 フランジ部
5 フランジ押え
8 蓋体
9 ボート(保持具)
11 回転導入機構
12 回転軸部
17 内側蓋部
18 外側蓋部
19 ボス部
22 フランジ部
24a Oリング
24b Oリング
29 Oリング
31 冷媒通路
32 面状のヒーター
38 シート
39 当て駒部材
45 Oリング
46 排気通路
47 排気孔
S 隙間
50 環状凹部
51 第1Oリング
52 第2Oリング
60 液受部
61 液受皿
70 液案内部
Claims (3)
- 下端が開口された石英製の処理容器と、該処理容器の下方に昇降可能に設けられ、処理容器の開口端を閉塞する蓋体と、該蓋体上に設けられ複数枚の被処理体を多段に保持する保持具と、前記処理容器の周囲に設けられた加熱手段とを備えた縦型熱処理装置において、前記蓋体は、前記処理容器の開口端に当接される石英製の内側蓋部と、該内側蓋部の外面を覆う金属製の外側蓋部とからなり、前記内側蓋部の上端外周部を、前記処理容器の開口端外周部よりも内側に形成し、前記外側蓋部の上端内周部に、前記内側蓋部の上端外周面と前記処理容器の開口端下面とに接してこれらの間をシールするOリングを設け、前記内側蓋部と前記外側蓋部の間に内側蓋部を加温する面状のヒーターを内側蓋部と非接触で設けたことを特徴とする縦型熱処理装置。
- 前記外側蓋部の前記Oリング近傍には該Oリングを冷却する冷媒通路が設けられていることを特徴とする請求項1に記載の縦型熱処理装置。
- 外側蓋部の中央部には前記保持具を回転するための回転導入機構が設けられ、該回転導入機構は前記外側蓋部の下面に固定されるフランジ部と、該フランジ部の中央から上方に突出した回転軸部とを有し、前記内側蓋部には前記回転軸部を挿通するボス部が設けられ、前記回転導入機構のフランジ部と内側蓋部のボス部との接触面にはOリングが二重に設けられ、前記回転導入機構のフランジ部には二重のOリング間を真空引きするための排気孔が設けられていることを特徴とする請求項1に記載の縦型熱処理装置。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004046729A JP4268069B2 (ja) | 2003-10-24 | 2004-02-23 | 縦型熱処理装置 |
PCT/JP2004/015369 WO2005041284A1 (ja) | 2003-10-24 | 2004-10-18 | 縦型熱処理装置 |
US10/576,940 US7674336B2 (en) | 2003-10-24 | 2004-10-18 | Processing apparatus |
EP04792538A EP1681714A4 (en) | 2003-10-24 | 2004-10-18 | VERTICAL HEAT TREATMENT FACILITY |
KR1020057022868A KR100885577B1 (ko) | 2003-10-24 | 2004-10-18 | 종형 열처리 장치 |
TW093132093A TW200534394A (en) | 2003-10-24 | 2004-10-22 | Vertical heat treatment device |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003364335 | 2003-10-24 | ||
JP2003417833 | 2003-12-16 | ||
JP2004046729A JP4268069B2 (ja) | 2003-10-24 | 2004-02-23 | 縦型熱処理装置 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008064519A Division JP4268211B2 (ja) | 2003-10-24 | 2008-03-13 | 縦型熱処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005203720A JP2005203720A (ja) | 2005-07-28 |
JP4268069B2 true JP4268069B2 (ja) | 2009-05-27 |
Family
ID=34527592
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004046729A Expired - Lifetime JP4268069B2 (ja) | 2003-10-24 | 2004-02-23 | 縦型熱処理装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7674336B2 (ja) |
EP (1) | EP1681714A4 (ja) |
JP (1) | JP4268069B2 (ja) |
KR (1) | KR100885577B1 (ja) |
TW (1) | TW200534394A (ja) |
WO (1) | WO2005041284A1 (ja) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070240644A1 (en) * | 2006-03-24 | 2007-10-18 | Hiroyuki Matsuura | Vertical plasma processing apparatus for semiconductor process |
US7762809B2 (en) * | 2006-10-13 | 2010-07-27 | Tokyo Electron Limited | Heat treatment apparatus |
JP2008258240A (ja) * | 2007-04-02 | 2008-10-23 | Hitachi Kokusai Electric Inc | 基板処理装置 |
JP5252850B2 (ja) * | 2007-07-30 | 2013-07-31 | 株式会社日立国際電気 | 基板処理装置および半導体装置の製造方法 |
KR100906291B1 (ko) * | 2007-09-04 | 2009-07-07 | 주식회사 실트론 | 열 응력 방지구조를 구비한 고온 열처리 노와 이를 위한배플 및 페데스탈 구조 |
JP4929199B2 (ja) | 2008-02-01 | 2012-05-09 | 株式会社日立国際電気 | 基板処理装置および半導体装置の製造方法 |
JP5188326B2 (ja) * | 2008-08-28 | 2013-04-24 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理方法、及び基板処理装置 |
TW201116332A (en) * | 2009-11-05 | 2011-05-16 | Metal Ind Res & Dev Cetre | Thermchemical treatment device |
JP5441779B2 (ja) * | 2010-03-24 | 2014-03-12 | 光洋サーモシステム株式会社 | 縦型熱処理炉のシャッタ装置 |
JP5549552B2 (ja) * | 2010-11-12 | 2014-07-16 | 東京エレクトロン株式会社 | 真空処理装置の組み立て方法及び真空処理装置 |
JP2012195565A (ja) * | 2011-02-28 | 2012-10-11 | Hitachi Kokusai Electric Inc | 基板処理装置、基板処理方法及び半導体装置の製造方法 |
JP5960028B2 (ja) * | 2012-10-31 | 2016-08-02 | 東京エレクトロン株式会社 | 熱処理装置 |
KR101577324B1 (ko) * | 2014-06-18 | 2015-12-29 | (주)티티에스 | 기판 처리 장치 |
JP6706901B2 (ja) * | 2015-11-13 | 2020-06-10 | 東京エレクトロン株式会社 | 処理装置 |
CN106222753B (zh) * | 2016-08-22 | 2018-07-06 | 中国科学技术大学 | 一种微型快速升降温退火炉 |
JP6847610B2 (ja) * | 2016-09-14 | 2021-03-24 | 株式会社Screenホールディングス | 熱処理装置 |
US10612136B2 (en) * | 2018-06-29 | 2020-04-07 | ASM IP Holding, B.V. | Temperature-controlled flange and reactor system including same |
US10998205B2 (en) * | 2018-09-14 | 2021-05-04 | Kokusai Electric Corporation | Substrate processing apparatus and manufacturing method of semiconductor device |
JP6752332B2 (ja) * | 2018-09-14 | 2020-09-09 | 株式会社Kokusai Electric | 基板処理装置、半導体装置の製造方法及びプログラム |
JP7026086B2 (ja) * | 2019-09-25 | 2022-02-25 | 株式会社Kokusai Electric | 基板処理装置、半導体装置の製造方法及び基板処理装置の洗浄方法 |
CN113140487B (zh) * | 2021-04-14 | 2024-05-17 | 北京北方华创微电子装备有限公司 | 半导体热处理设备 |
WO2023170945A1 (ja) * | 2022-03-11 | 2023-09-14 | 株式会社Kokusai Electric | シールアセンブリ、半導体装置の製造方法、基板処理方法およびプログラム |
CN117580343B (zh) * | 2024-01-15 | 2024-03-19 | 南京玥晖环境科技有限公司 | 一种低能耗微弧氧化电源 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5751639A (en) | 1980-09-12 | 1982-03-26 | Aisin Chem Co Ltd | Belt conveyor |
JPH0648679B2 (ja) | 1990-04-16 | 1994-06-22 | 信越石英株式会社 | 石英ガラス製ウエーハボート保持治具 |
JP3230836B2 (ja) * | 1992-04-09 | 2001-11-19 | 東京エレクトロン株式会社 | 熱処理装置 |
JP2910959B2 (ja) | 1992-06-25 | 1999-06-23 | 富士写真光機株式会社 | 位置計測作図装置 |
JP2564166Y2 (ja) * | 1992-07-20 | 1998-03-04 | 神鋼電機株式会社 | 表面処理装置 |
JP3256037B2 (ja) * | 1993-07-07 | 2002-02-12 | 東京エレクトロン株式会社 | 熱処理装置 |
JPH07147240A (ja) | 1993-11-24 | 1995-06-06 | Fuji Electric Co Ltd | 半導体製造装置 |
JPH1097447A (ja) * | 1996-07-31 | 1998-04-14 | Fujitsu Ltd | 電文制御システム及び電文制御プログラムを格納した記憶媒体 |
JP3601926B2 (ja) | 1997-01-22 | 2004-12-15 | 株式会社日立国際電気 | 半導体製造装置 |
JP3556804B2 (ja) * | 1997-05-20 | 2004-08-25 | 東京エレクトロン株式会社 | 処理装置及び処理方法 |
JP3463785B2 (ja) | 1997-09-22 | 2003-11-05 | 東京エレクトロン株式会社 | 封止装置および処理装置 |
JP2000068259A (ja) * | 1998-08-19 | 2000-03-03 | Tokyo Electron Ltd | 熱処理装置 |
JP4433428B2 (ja) | 1999-06-25 | 2010-03-17 | 光洋サーモシステム株式会社 | 縦型炉および治具 |
JP2002009008A (ja) | 2000-06-19 | 2002-01-11 | Hitachi Kokusai Electric Inc | 基板処理装置 |
JP3881567B2 (ja) | 2002-03-05 | 2007-02-14 | 東京エレクトロン株式会社 | 熱処理用ボート及び縦型熱処理装置 |
-
2004
- 2004-02-23 JP JP2004046729A patent/JP4268069B2/ja not_active Expired - Lifetime
- 2004-10-18 EP EP04792538A patent/EP1681714A4/en not_active Withdrawn
- 2004-10-18 US US10/576,940 patent/US7674336B2/en active Active
- 2004-10-18 WO PCT/JP2004/015369 patent/WO2005041284A1/ja active Search and Examination
- 2004-10-18 KR KR1020057022868A patent/KR100885577B1/ko active IP Right Grant
- 2004-10-22 TW TW093132093A patent/TW200534394A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
US7674336B2 (en) | 2010-03-09 |
WO2005041284A1 (ja) | 2005-05-06 |
KR20060090743A (ko) | 2006-08-16 |
EP1681714A4 (en) | 2007-08-22 |
TW200534394A (en) | 2005-10-16 |
EP1681714A1 (en) | 2006-07-19 |
JP2005203720A (ja) | 2005-07-28 |
US20070075086A1 (en) | 2007-04-05 |
TWI349308B (ja) | 2011-09-21 |
KR100885577B1 (ko) | 2009-02-24 |
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