JP2007113119A - 基板裏面への堆積を減少させる処理装置及び処理方法 - Google Patents
基板裏面への堆積を減少させる処理装置及び処理方法 Download PDFInfo
- Publication number
- JP2007113119A JP2007113119A JP2006309527A JP2006309527A JP2007113119A JP 2007113119 A JP2007113119 A JP 2007113119A JP 2006309527 A JP2006309527 A JP 2006309527A JP 2006309527 A JP2006309527 A JP 2006309527A JP 2007113119 A JP2007113119 A JP 2007113119A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- pedestal
- chamber
- gas
- processing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 91
- 238000000034 method Methods 0.000 title claims description 21
- 230000008021 deposition Effects 0.000 title abstract description 25
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims abstract description 77
- 238000010926 purge Methods 0.000 claims abstract description 30
- 238000010438 heat treatment Methods 0.000 claims abstract description 14
- 239000012530 fluid Substances 0.000 claims abstract description 11
- 230000002093 peripheral effect Effects 0.000 claims abstract description 10
- 230000008569 process Effects 0.000 claims description 18
- 235000012431 wafers Nutrition 0.000 description 64
- 239000007789 gas Substances 0.000 description 44
- 238000000151 deposition Methods 0.000 description 24
- 238000005229 chemical vapour deposition Methods 0.000 description 16
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical group [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 14
- 229910052721 tungsten Inorganic materials 0.000 description 14
- 239000010937 tungsten Substances 0.000 description 14
- 239000000463 material Substances 0.000 description 13
- 239000004065 semiconductor Substances 0.000 description 8
- 230000008901 benefit Effects 0.000 description 5
- 239000000356 contaminant Substances 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 238000005086 pumping Methods 0.000 description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 3
- 230000007717 exclusion Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000005485 electric heating Methods 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45519—Inert gas curtains
- C23C16/45521—Inert gas curtains the gas, other than thermal contact gas, being introduced the rear of the substrate to flow around its periphery
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Electrodes Of Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
Abstract
【解決手段】チャンバ内の基板支持体は、ヒーターペデスタル16の形態であり、基板の下面を受けるための基板受容面を有する。この周囲を制限するシャドーリング24は、ペデスタル61の周囲に配置され、基板の端面エッジ部分を覆う。このシャドーリング24はまた、基板の端面エッジでペデスタル61とシャドーリング24自身の間のキャビティーを画成し、操作に際しては、チャンバは第1の圧力で処理ガスを受容し、第1の圧力よりも高い第2の圧力で、シャドーリング24とペデスタル61との間のキャビティー内にパージガスが導入される。パージガスの流れを基板の端面エッジからより遠ざけるために、流体導管74が具備される。
【選択図】図3
Description
Claims (13)
- 外周エッジと処理のための上面と下面とを有する基板を処理するための基板処理装置であって、
(a)操作中に処理ガスを受容するチャンバを画成するハウジングと、
(b)該チャンバ内にあり該基板の該下面を受容する基板受容面、ガスポート、及び該ガスポートに形成されて該チャンバの下側部分に通じている通路を有する基板支持体と、
(c)該基板支持体を制限して、該基板支持体との間に該ガスポート及び該通路に通じているキャビティーを画成し、該基板支持体を通る該通路で該キャビティーを該チャンバの該下側部分に滑らかに通じさせ、該基板の該外周エッジに隣接する基板支持体制限リングと、
(d)該ガスポートを通じてパージガスを該キャビティー内に導入するとともに、該基板の該外周エッジで該通路を通じてパージガスを該チャンバ内に導入するためのパージガス供給手段と、
(e)該パージガスの流れを該基板の該外周エッジから離れさせることを促進することにより、該パージガスの導入と流れとが、該基板の該外周エッジ及び該下面への該チャンバ内処理ガスの接触を減少させる、少なくとも1つの流体通路と
を備える基板処理装置。 - 該流体通路が、該基板支持体を通って形成されるとともに該通路を通って該キャビティーに滑らかに接続される少なくとも1つの流体導管で画成される請求項1に記載の基板処理装置。
- 該制限リングが、該基板支持体とそれぞれ隣接面で隣接し、該流体導管が該リング及び該支持体の該隣接面で画成される請求項2に記載の基板処理装置。
- 該基板支持体が、該基板受容面に少なくとも1つのガスポート開口を有し、該装置が更に、該チャンバ内で画成される第1の圧力よりも低い第3の圧力まで該ガスポートでの圧力を減少させるための吸引手段を有し、該第1の圧力と該第3の圧力との圧力差により該基板受容面に受容された基板が該基板受容面に抑えつけられる請求項3に記載の基板処理装置。
- 該基板支持体が該支持体を加熱するためのヒーターを有し、該支持体に支持された基板が熱伝導により加熱される請求項4に記載の基板処理装置。
- 該制限リングが基板突出し部を有し、該基板突出し部はウエハが該基板支持体に支持された際にウエハの該上面の外周エッジ部を覆うような寸法である請求項3に記載の基板処理装置。
- 該支持体と該制限リングの該隣接面の少なくとも1つが平坦でない請求項6に記載の基板処理装置。
- 処理反応器であって、
基板を処理するためその上側の部分で処理ガスを受容する処理チャンバと、
前記上側部分内で前記基板を支持するペデスタルと、
前記基板の上側外周に係合し、前記外周の近傍で前記ペデスタルとの間にキャビティーを形成するシャドーリングと、
前記キャビティーにパージガスを供給するガスラインと、
前記キャビティーから前記チャンバの下側部分まで伸びる複数の流体通路と
を備える処理反応器。 - 前記シャドーリングが前記外周の外側の前記ペデスタルの部分から所定のギャップだけ距離をもち、前記複数の流体通路が前記所定のギャップと同じではない請求項8に記載の処理反応器。
- 前記ペデスタルが、前記基板を加熱するための抵抗ヒーターを有する請求項9に記載の処理反応器。
- 前記流体通路が、前記シャドーリングと前記ギャップに面する前記ペデスタルとの少なくとも1つに形成される、放射状に伸びるグルーヴないし溝を備える請求項8に記載の処理反応器。
- 前記グルーヴないし溝が、前記ペデスタルに形成される請求項11に記載の処理反応器。
- 前記流体通路が、前記ペデスタルに形成された閉導管である請求項8に記載の処理反応器。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/263,617 US5476548A (en) | 1994-06-20 | 1994-06-20 | Reducing backside deposition in a substrate processing apparatus through the use of a shadow ring |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15329395A Division JP3963966B2 (ja) | 1994-06-20 | 1995-06-20 | 基板裏面への堆積を減少させる処理装置及び処理方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007113119A true JP2007113119A (ja) | 2007-05-10 |
JP4563984B2 JP4563984B2 (ja) | 2010-10-20 |
Family
ID=23002524
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15329395A Expired - Lifetime JP3963966B2 (ja) | 1994-06-20 | 1995-06-20 | 基板裏面への堆積を減少させる処理装置及び処理方法 |
JP2006309527A Expired - Lifetime JP4563984B2 (ja) | 1994-06-20 | 2006-11-15 | 基板裏面への堆積を減少させる処理装置及び処理方法 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15329395A Expired - Lifetime JP3963966B2 (ja) | 1994-06-20 | 1995-06-20 | 基板裏面への堆積を減少させる処理装置及び処理方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US5476548A (ja) |
EP (1) | EP0688888B1 (ja) |
JP (2) | JP3963966B2 (ja) |
KR (1) | KR960002527A (ja) |
DE (1) | DE69528217T2 (ja) |
Families Citing this family (54)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5855687A (en) * | 1990-12-05 | 1999-01-05 | Applied Materials, Inc. | Substrate support shield in wafer processing reactors |
US5800686A (en) * | 1993-04-05 | 1998-09-01 | Applied Materials, Inc. | Chemical vapor deposition chamber with substrate edge protection |
US5888304A (en) * | 1996-04-02 | 1999-03-30 | Applied Materials, Inc. | Heater with shadow ring and purge above wafer surface |
US5766365A (en) * | 1994-02-23 | 1998-06-16 | Applied Materials, Inc. | Removable ring for controlling edge deposition in substrate processing apparatus |
US6033480A (en) * | 1994-02-23 | 2000-03-07 | Applied Materials, Inc. | Wafer edge deposition elimination |
US5590239A (en) * | 1994-06-06 | 1996-12-31 | Motorola | Planar uniform heating surface with additional circumscribing ring |
US5705080A (en) * | 1994-07-06 | 1998-01-06 | Applied Materials, Inc. | Plasma-inert cover and plasma cleaning process |
JP3257328B2 (ja) * | 1995-03-16 | 2002-02-18 | 株式会社日立製作所 | プラズマ処理装置及びプラズマ処理方法 |
JPH08302474A (ja) * | 1995-04-28 | 1996-11-19 | Anelva Corp | Cvd装置の加熱装置 |
US5908530A (en) * | 1995-05-18 | 1999-06-01 | Obsidian, Inc. | Apparatus for chemical mechanical polishing |
US5772773A (en) * | 1996-05-20 | 1998-06-30 | Applied Materials, Inc. | Co-axial motorized wafer lift |
US5866067A (en) * | 1997-03-24 | 1999-02-02 | Sony Corporation And Materials Research Corporation | High purity chromium metal by casting with controlled oxygen content |
US6110025A (en) * | 1997-05-07 | 2000-08-29 | Obsidian, Inc. | Containment ring for substrate carrier apparatus |
FR2763964B1 (fr) * | 1997-05-28 | 1999-08-13 | Sgs Thomson Microelectronics | Amelioration du flux gazeux dans un reacteur d'epitaxie |
US6063440A (en) * | 1997-07-11 | 2000-05-16 | Applied Materials, Inc. | Method for aligning a wafer |
US5985033A (en) * | 1997-07-11 | 1999-11-16 | Applied Materials, Inc. | Apparatus and method for delivering a gas |
US6210483B1 (en) | 1997-12-02 | 2001-04-03 | Applied Materials, Inc. | Anti-notch thinning heater |
US6296712B1 (en) | 1997-12-02 | 2001-10-02 | Applied Materials, Inc. | Chemical vapor deposition hardware and process |
US5955381A (en) * | 1998-03-03 | 1999-09-21 | Lucent Technologies Inc. | Integrated circuit fabrication |
US6159299A (en) * | 1999-02-09 | 2000-12-12 | Applied Materials, Inc. | Wafer pedestal with a purge ring |
US6323129B1 (en) * | 1999-04-02 | 2001-11-27 | National Semiconductor Corporation | Process for maintaining a semiconductor substrate layer deposition equipment chamber in a preconditioned and low particulate state |
US6423949B1 (en) * | 1999-05-19 | 2002-07-23 | Applied Materials, Inc. | Multi-zone resistive heater |
US6464795B1 (en) | 1999-05-21 | 2002-10-15 | Applied Materials, Inc. | Substrate support member for a processing chamber |
US6176931B1 (en) | 1999-10-29 | 2001-01-23 | International Business Machines Corporation | Wafer clamp ring for use in an ionized physical vapor deposition apparatus |
US6589352B1 (en) * | 1999-12-10 | 2003-07-08 | Applied Materials, Inc. | Self aligning non contact shadow ring process kit |
US6494955B1 (en) | 2000-02-15 | 2002-12-17 | Applied Materials, Inc. | Ceramic substrate support |
US6350320B1 (en) * | 2000-02-22 | 2002-02-26 | Applied Materials, Inc. | Heater for processing chamber |
US6488565B1 (en) | 2000-08-29 | 2002-12-03 | Applied Materials, Inc. | Apparatus for chemical mechanical planarization having nested load cups |
JP4583591B2 (ja) * | 2000-12-15 | 2010-11-17 | 東京エレクトロン株式会社 | 処理方法及び処理装置 |
US6709721B2 (en) | 2001-03-28 | 2004-03-23 | Applied Materials Inc. | Purge heater design and process development for the improvement of low k film properties |
US6795292B2 (en) | 2001-05-15 | 2004-09-21 | Dennis Grimard | Apparatus for regulating temperature of a process kit in a semiconductor wafer-processing chamber |
US6730175B2 (en) | 2002-01-22 | 2004-05-04 | Applied Materials, Inc. | Ceramic substrate support |
US7582186B2 (en) * | 2002-12-20 | 2009-09-01 | Tokyo Electron Limited | Method and apparatus for an improved focus ring in a plasma processing system |
US20040244949A1 (en) * | 2003-05-30 | 2004-12-09 | Tokyo Electron Limited | Temperature controlled shield ring |
JP5189294B2 (ja) * | 2004-02-13 | 2013-04-24 | エーエスエム アメリカ インコーポレイテッド | オートドーピングおよび裏面堆積を減少させるための基板支持システム |
US8372203B2 (en) * | 2005-09-30 | 2013-02-12 | Applied Materials, Inc. | Apparatus temperature control and pattern compensation |
US7691204B2 (en) * | 2005-09-30 | 2010-04-06 | Applied Materials, Inc. | Film formation apparatus and methods including temperature and emissivity/pattern compensation |
US9917001B2 (en) * | 2008-01-21 | 2018-03-13 | Applied Materials, Inc. | High temperature fine grain aluminum heater |
JP2009277720A (ja) * | 2008-05-12 | 2009-11-26 | Nec Electronics Corp | 半導体装置の製造方法及びエッチング装置 |
US8449679B2 (en) | 2008-08-15 | 2013-05-28 | Lam Research Corporation | Temperature controlled hot edge ring assembly |
US8753447B2 (en) * | 2009-06-10 | 2014-06-17 | Novellus Systems, Inc. | Heat shield for heater in semiconductor processing apparatus |
JP5992334B2 (ja) | 2009-12-31 | 2016-09-14 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | ウエハのエッジおよび斜面の堆積を修正するためのシャドウリング |
US8740206B2 (en) | 2010-01-27 | 2014-06-03 | Applied Materials, Inc. | Life enhancement of ring assembly in semiconductor manufacturing chambers |
JP6056403B2 (ja) * | 2012-11-15 | 2017-01-11 | 東京エレクトロン株式会社 | 成膜装置 |
US9997381B2 (en) * | 2013-02-18 | 2018-06-12 | Lam Research Corporation | Hybrid edge ring for plasma wafer processing |
JP6024921B2 (ja) * | 2013-11-01 | 2016-11-16 | パナソニックIpマネジメント株式会社 | プラズマ処理装置及びプラズマ処理方法 |
ITCO20130058A1 (it) * | 2013-11-11 | 2015-05-12 | Lpe Spa | Suscettore con lavorazioni di forma arcuata nella superficie d'appoggio dei substrati |
ITCO20130072A1 (it) * | 2013-12-19 | 2015-06-20 | Lpe Spa | Suscettore con lavorazioni curve e concentriche nella superficie d'appoggio dei substrati |
US10903055B2 (en) * | 2015-04-17 | 2021-01-26 | Applied Materials, Inc. | Edge ring for bevel polymer reduction |
TWI734770B (zh) * | 2016-04-24 | 2021-08-01 | 美商應用材料股份有限公司 | 用於防止空間ald處理腔室中之背側沉積的設備 |
US10147610B1 (en) | 2017-05-30 | 2018-12-04 | Lam Research Corporation | Substrate pedestal module including metallized ceramic tubes for RF and gas delivery |
US11330673B2 (en) | 2017-11-20 | 2022-05-10 | Applied Materials, Inc. | Heated substrate support |
TWI822764B (zh) * | 2018-04-20 | 2023-11-21 | 美商蘭姆研究公司 | 半導體處理用設備及方法 |
KR20210030074A (ko) * | 2019-09-09 | 2021-03-17 | 삼성전자주식회사 | 진공 척 및 상기 진공 척을 포함하는 기판 처리 장치 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04226027A (ja) * | 1990-04-23 | 1992-08-14 | Genus Inc | ガス阻止装置を有するウエファ周辺封止装置 |
JPH04233221A (ja) * | 1990-07-16 | 1992-08-21 | Novellus Syst Inc | 基板支持装置 |
JPH06306615A (ja) * | 1993-04-05 | 1994-11-01 | Applied Materials Inc | 改良された化学気相蒸着チャンバ |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5262029A (en) * | 1988-05-23 | 1993-11-16 | Lam Research | Method and system for clamping semiconductor wafers |
US5230741A (en) * | 1990-07-16 | 1993-07-27 | Novellus Systems, Inc. | Gas-based backside protection during substrate processing |
US5304248A (en) * | 1990-12-05 | 1994-04-19 | Applied Materials, Inc. | Passive shield for CVD wafer processing which provides frontside edge exclusion and prevents backside depositions |
WO1993013241A1 (en) * | 1991-12-23 | 1993-07-08 | Genus, Inc. | Purge gas in wafer coating area selection |
US5328722A (en) * | 1992-11-06 | 1994-07-12 | Applied Materials, Inc. | Metal chemical vapor deposition process using a shadow ring |
US5292554A (en) * | 1992-11-12 | 1994-03-08 | Applied Materials, Inc. | Deposition apparatus using a perforated pumping plate |
US5326725A (en) * | 1993-03-11 | 1994-07-05 | Applied Materials, Inc. | Clamping ring and susceptor therefor |
DE69432383D1 (de) * | 1993-05-27 | 2003-05-08 | Applied Materials Inc | Verbesserungen betreffend Substrathalter geeignet für den Gebrauch in Vorrichtungen für die chemische Abscheidung aus der Dampfphase |
US5511799A (en) * | 1993-06-07 | 1996-04-30 | Applied Materials, Inc. | Sealing device useful in semiconductor processing apparatus for bridging materials having a thermal expansion differential |
DE69401863T2 (de) * | 1993-07-15 | 1997-07-03 | Applied Materials Inc | Verbesserte Suszeptor Ausführung |
JP4108119B2 (ja) * | 1994-02-23 | 2008-06-25 | アプライド マテリアルズ, インコーポレイテッド | 改良型化学気相堆積チャンバ |
-
1994
- 1994-06-20 US US08/263,617 patent/US5476548A/en not_active Expired - Lifetime
-
1995
- 1995-06-15 DE DE69528217T patent/DE69528217T2/de not_active Expired - Fee Related
- 1995-06-15 EP EP95304139A patent/EP0688888B1/en not_active Expired - Lifetime
- 1995-06-20 JP JP15329395A patent/JP3963966B2/ja not_active Expired - Lifetime
- 1995-06-20 KR KR1019950016322A patent/KR960002527A/ko not_active Application Discontinuation
-
2006
- 2006-11-15 JP JP2006309527A patent/JP4563984B2/ja not_active Expired - Lifetime
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04226027A (ja) * | 1990-04-23 | 1992-08-14 | Genus Inc | ガス阻止装置を有するウエファ周辺封止装置 |
JPH04233221A (ja) * | 1990-07-16 | 1992-08-21 | Novellus Syst Inc | 基板支持装置 |
JPH06306615A (ja) * | 1993-04-05 | 1994-11-01 | Applied Materials Inc | 改良された化学気相蒸着チャンバ |
Also Published As
Publication number | Publication date |
---|---|
US5476548A (en) | 1995-12-19 |
JP4563984B2 (ja) | 2010-10-20 |
JPH0881775A (ja) | 1996-03-26 |
DE69528217D1 (de) | 2002-10-24 |
EP0688888A3 (en) | 1998-02-04 |
EP0688888A2 (en) | 1995-12-27 |
DE69528217T2 (de) | 2003-04-30 |
EP0688888B1 (en) | 2002-09-18 |
JP3963966B2 (ja) | 2007-08-22 |
KR960002527A (ko) | 1996-01-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4563984B2 (ja) | 基板裏面への堆積を減少させる処理装置及び処理方法 | |
JP5578478B2 (ja) | 基板プロセス装置でのエッジ堆積を制御する移動可能リング | |
JP4361614B2 (ja) | 半導体基板のエッジ成膜の制御 | |
US5888304A (en) | Heater with shadow ring and purge above wafer surface | |
JP2918785B2 (ja) | 改良された化学気相蒸着チャンバおよび方法 | |
US6033480A (en) | Wafer edge deposition elimination | |
US5997651A (en) | Heat treatment apparatus | |
JP2641373B2 (ja) | 真空蒸着装置 | |
US7250094B2 (en) | Heat treatment apparatus | |
US5972114A (en) | Film deposition apparatus with anti-adhesion film and chamber cooling means | |
US7718930B2 (en) | Loading table and heat treating apparatus having the loading table | |
KR20010034921A (ko) | 정화 가스 채널과 펌핑 시스템을 갖는 기판 지지 부재 | |
JPH06342760A (ja) | 差圧cvdチャック | |
JP2002521815A (ja) | 基板処理システムの基板上の汚染を低減する方法及び装置 | |
US6733593B1 (en) | Film forming device | |
JP4108119B2 (ja) | 改良型化学気相堆積チャンバ | |
TW202122626A (zh) | 用於改進基板上的邊緣薄膜厚度均勻性的處理套件 | |
JP3636864B2 (ja) | 処理装置およびステージ装置 | |
JP2002155366A (ja) | 枚葉式熱処理方法および枚葉式熱処理装置 | |
JPH10214798A (ja) | ウエハエッジ堆積の排除 | |
JP3738494B2 (ja) | 枚葉式の熱処理装置 | |
JPH0930893A (ja) | 気相成長装置 | |
US20230357929A1 (en) | Apparatus and methods to promote wafer edge temperature uniformity |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20091020 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20091215 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100309 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100416 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20100706 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20100729 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130806 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130806 Year of fee payment: 3 |
|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: R3D02 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
EXPY | Cancellation because of completion of term |