JP2918785B2 - 改良された化学気相蒸着チャンバおよび方法 - Google Patents
改良された化学気相蒸着チャンバおよび方法Info
- Publication number
- JP2918785B2 JP2918785B2 JP6067474A JP6747494A JP2918785B2 JP 2918785 B2 JP2918785 B2 JP 2918785B2 JP 6067474 A JP6067474 A JP 6067474A JP 6747494 A JP6747494 A JP 6747494A JP 2918785 B2 JP2918785 B2 JP 2918785B2
- Authority
- JP
- Japan
- Prior art keywords
- susceptor
- substrate
- chamber
- gas
- scavenging
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45519—Inert gas curtains
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45519—Inert gas curtains
- C23C16/45521—Inert gas curtains the gas, other than thermal contact gas, being introduced the rear of the substrate to flow around its periphery
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
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- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68728—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
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- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
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- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
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- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
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- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Description
蒸着(CVD)チャンバに関する。特に、この発明は、
薄膜を半導体基板上に均一に蒸着するCVD真空チャン
バに関する。
膜を蒸着するのに採用される。先行ガスは、基板の上方
に配置されたガスマニホールド板を通して真空チャンバ
に満たされる。この基板は一般的に約250〜650℃
の範囲にある処理温度まで加熱される。先行ガスは加熱
された基板面と反応してその上に薄膜を蒸着させ、揮発
性の副産物ガスを生成する。この副産物ガスはチャンバ
の排気システムを通して吸出される。
めに、近年、基板上に形成されるデバイスのサイズは減
少し、基板上に形成されるデバイスの数は増加してき
た。従って、CVD蒸着薄膜が基板にわたって均一の厚
さであり、この結果、基板上のすべてのデバイスが均一
であることの重要さが増してきている。さらに、良好な
デバイスの歩留り(yield )を悪化させる基板の汚染を
減らすために、処理チャンバ内の粒子の形成を防止する
ことも重要になってきている。
ハのサイズは増加し、現在の最新のシリコンウエハは直
径約8インチである。これによって、複数の、100個
までのウエハを一度に処理するバッチ型の処理とは異な
り、処理チャンバ内で一度に1個のウエハだけを処理で
きるようになった。処理中に問題が生じたときに多くの
高価なウエハが損失され廃棄しなければならないので、
大型のウエハを用いるバッチ処理の経済性は低下した。
さらに、一度に1個の基板だけが処理される場合には、
処理チャンバをより小さくすることができ、処理は制御
しやすくなる。
をウエハを真空環境から取り出すことなく実行すること
によってウエハ処理を自動化する装置が開発され、これ
により、移送時間及びウエハの汚染が減少した。このよ
うなシステムは、例えばメイダン(Maydan)らへの米国
特許第4,951,601 号によって開示されている。これは、
複数の処理チャンバが移送チャンバに接続されたもので
ある。中央移送チャンバ内のロボットが、種々の接続さ
れた処理チャンバ内のスリットバルブを通してウエハを
渡し、チャンバ内の処理が完了した後それを受け取る。
に開示されている。このチャンバはワング(Wang)らへ
の米国特許第4,892,753 号に記載されている。図1に示
すように、CVDチャンバ10、処理中にウエハ14が
上に載せられるサセプタ16は、垂直可動エレベータ
(図示せず)によって垂直に動きうる。ウエハが外部の
ロボットブレードからチャンバ内に運ばれてきたとき、
複数のピン20がウエハを支持する。複数のサセプタ支
持指状部(fingers )22が、ウエハ指状部20に接続
され、棒状部材(bar )40の上に取り付けられてい
る。棒状部材40もエレベータによって垂直に動きう
る。ウエハ14及びそれが上に取り付けられるサセプタ
16は、複数の高強度ランプ58によって透光性の石英
窓70を通して加熱される。2組の石英窓70があると
きに、2列のランプがチャンバ10の上部及び底部の双
方の外側に配置されているのが好ましい構成である。こ
れらの石英窓70はチャンバ壁にテフロンシール72に
よってシールされている。これらの外部の加熱ランプ5
8を使用することによって、非常にすばやいウエハ及び
サセプタの加熱が可能になり、処理サイクルと処理サイ
クルの間でランプが切られているときにチャンバを冷却
することが可能になる。
寿命は比較的短い。すなわち、約1000〜2000回
の蒸着サイクルの後には石英窓が曇るほどの蒸着物(de
position)が生じて、高強度ランプからの光はもはや石
英窓70を透過することができなくなり、それは清掃さ
れなければならない。石英窓には、チャンバを清掃する
のに用いられるフッ素含有プラズマも付着し、これも粒
子を発生させる。窓70を横切って浄化ガスを流すこと
により清掃間隔は長くなるが、清掃または窓70の交換
のために必要な停止時間はやはり高価である。
に交換されなければならず、付加的な装置の停止時間が
必要となる。
問題は、チャンバにおいて低い漏れ率を保持するため
に、ガスを抜くのに約6時間までの長時間を要すること
である。石英窓70をシールするのに用いられるテフロ
ンシール71は、ヘリウム浸透性であり、少しずつガス
を放出し(outgas slowly )、チャンバ10が十分な真
空に到達するには長時間を要する。チャンバの漏れにつ
いての現在の標準は、真空が断たれたときに、チャンバ
10内の圧力が72ミリトールまでもってこられ、温度
が450℃に上げられることを要求する。そして、チャ
ンバ内の圧力の上昇はモニターされる。1分当たり0.
5ミリリットルより大きくない漏れ率(leakage rate)
が現在の標準である。
スからタングステンのような金属を蒸着するのに用いら
れている。WF6 は揮発性の高いガスであり、タングス
テンがウエハの上側だけでなくウエハの端部表面及び裏
側にも蒸着されるため、問題が生じる。これらの端部及
び裏側の面は、非常に磨かれた上面よりも粗く、スパッ
タされた窒化チタンのような粘着層で被覆されず、この
ため、蒸着された材料は端部及び底部の表面からはがれ
落ちやすく、チャンバを汚染する。余分の蒸着は同じま
たは異なるチャンバを用いて、エッチプラズマの中でエ
ッチングされうるが、このプロセス自身チャンバ内で粒
子を形成し、あるいはウエハの裏側にダメージを与え
る。
いられる。締め付けリングは、蒸着の間、ウエハの周辺
部をカバーし、これにより蒸着ガスがウエハの端部及び
裏側の表面に到達するのを防止する。しかし、例えばW
F6 の揮発性のために、締め付けリングだけではウエハ
の端部及び裏側の蒸着を防止することはできない。締め
付けリングの下方あるいは締め付けリングの下方のウエ
ハ端部に向けられた掃気ガスを使用することも試みられ
た。掃気ガスは、処理ガスがこれらの端部及び裏面に到
達する機会を減らす正の圧力を及ぼす。
の欠点を有している。処理サイクルの間に締め付けリン
グは上下し、サセプタ及びウエハを摩擦しうる。これに
より、粒子が発生することになる。これに加えて、締め
付けリングはウエハの周辺の面を覆うため、金属が蒸着
されうるウエハ領域を減少させる。
締め付けリングが、ウエハよりも厚いため、ウエハより
も冷えており、締め付けリングに接触するウエハの周辺
部を冷却してしまうことである。これにより、冷えたウ
エハ周辺部の蒸着速度が低下し、蒸着膜の不均一に至
る。
ず、CVDによるタングステンのような金属の蒸着は望
むほどには均一にならない。サセプタ及びウエハを加熱
するための外部の高強度ランプの使用によっても完全に
均一な膜は得られず、蒸着された膜は均質にはならな
い。さらに、石英窓上へのタングステンや他の材料の蒸
着が時間とともに形成されるため、窓の透明度を低下さ
せ、それは定期的に清掃されなければならない。これは
チャンバを開けることを必要とし、停止時間を増加させ
るため、高価になる。このチャンバには、粒子発生や蒸
着の不均一性の他の問題もある。従って、粒子発生及び
蒸着膜の不均一性の原因の究明が続けられており、上記
問題の解決策が常に求められている。
ステンを前面または選択的に、またはケイ化タングステ
ン(tungsten silicide )、窒化チタン、銅等を蒸着す
るための単一基板式あるいは枚葉式のCVDチャンバを
備えており、このチャンバは蒸着膜の均一性を向上させ
る。この発明のCVDチャンバは以下のものを備えてい
る。すなわち、上に取り付けられた基板を連続的に均一
に加熱するために、サセプタ内に固着された1個のコイ
ル抵抗ヒータを用いて抵抗によって加熱されるサセプ
タ。処理の際に基板をサセプタに対して堅固に取り付
け、これにより、少なくとも部分的に基板裏側の蒸着を
防止し、加熱されたサセプタから基板への熱の移動を促
進する、サセプタを通る真空ライン。処理ガスがウエハ
の底部エッジ及び裏側に到達するのを防止する、前記サ
セプタの周辺を通る掃気ガスライン。基板上の均一なギ
ャップを維持する、前記サセプタに取り付けられた処理
されにくい(refractory)掃気ガイド。この発明の掃気
ガイドは処理中に基板に接触せず、これにより基板周辺
の温度低下及び基板にわたる温度の不均一性の原因が取
り除かれ、チャンバの処理部分に入る掃気ガスの量が制
限される。これに加えて、基板の中心から端部に至る温
度の均一性を制御するための不活性ガスの源を真空ライ
ン中に設けたこと、並びに、余分の及び副産物のガスの
チャンバからの排出の均一性を向上させるための、チャ
ンバの真空排出板を設けたことが、このCVDチャンバ
のさらに改良された点である。
中心から端部に至る温度均一性を+/−2℃に維持する
ことができる。
対して同じ数字が用いられる。
ngle substrate)CVD処理チャンバにとっては、強力
なランプよりも、CVD処理の間に基板の台となる、抵
抗によって加熱されるサセプタ台の方が有利であること
を発見した。この発明の抵抗ヒータは、図2A及び2B
に示すような、8.1KWのオーダの1個のコイル抵抗
ヒータ200を備えている。サセプタ台210は、金
属、例えばアルミニウムのブロックを備えており、この
ブロックは図3に示すように内部にはめ込まれた1個の
コイル抵抗ヒータ200を有している。基板のためのサ
セプタ支持部を均一に加熱し、その上に取り付けられた
基板を均一に加熱するために、コイルはすべての側面に
おいてサセプタ台210の大部分に接触しなければなら
ない。図3は、コイル200がすべての側面で金属に接
触するのを確実にするために圧入されたアルミニウム製
の嵌合部212とともに、サセプタ台(susceptor moun
t )210にはめ込まれた(embedded)コイル200の
断面図である。この発明のサセプタ台210を作るに
は、ヒータコイルのためのスペース211が中実の(so
lid )サセプタ台210から機械加工され、コイル20
0がその中に挿入され、そしてアルミニウム板212が
コイル200に対して圧入され、コイル200は金属の
サセプタ台210に全側面で接触する。そして、それは
ヒータコイルを大気圧にしておくために溶接され、熱の
移動が促進される。これは、サセプタ台210の均一な
加熱を確保するために重要なことである。また、中にコ
イルを備えたアルミニウムのサセプタ台は、鋳造によっ
て作ることもできる。
属、例えばサセプタ210及び金属の嵌合部212に接
触するため、たくさんのコイルを用いることなく高いパ
ワー密度を与えることができる。そして、実際、高い密
度のパワーを得ることができ、図2に示すように、たっ
た1個の加熱コイル200によってサセプタ台210の
均一な抵抗加熱を得ることができた。これにより、サセ
プタ台210のサイズを小型化することが可能であり、
種々のガス配管を内部に設けることができる。ウエハ
は、サセプタ台210の上に真空によって取り付けら
れ、上述のヒータ装置(heater assembly )用いること
によって迅速かつ均一に加熱されうる。中心から端部ま
での基板上の温度変動は、例えば約475℃である処理
温度において、2℃を超えない。
約0.25インチの距離においてヒータの下側と接触し
た状態で保持される。熱電対214はそこに小さなばね
力によって保持され、温度コントローラに制御信号を提
供する。熱電対214は大気圧にされた穴の中にあり、
ヒータ200と熱電対214との間の熱の移動が促進さ
れ、より正確な検出が可能になる。
ップを予測しヒータの応答特性8Aを変えて均一な温度
分布(profile )を維持する比例微分積分(PID)制
御によって駆動される手段である。
り、図5はサセプタ台210の上面図である。
が示されている。真空ライン216は真空源(図示せ
ず)に接続されており、この真空源はCVDチャンバ自
身のための真空排気ポンプからは分離されている。真空
ライン216は、サセプタ210の表面の複数の開口部
218に接続されている。これらの開口部218は、サ
セプタ210の表面上の小溝220内に配置されてい
る。従って、真空が付与されたとき、サセプタ210上
に取り付けられた基板は、サセプタ210に対して均一
に吸引される。真空開口部218は溝220に接続さ
れ、サセプタ210の表面にわたって真空を均一に分布
させるように配置される。真空溝220は基板の端部ま
では伸びていないが、例えば、8インチのウエハが処理
されるときには約7インチほどサセプタ210にわたっ
て伸びていてもよい。
力が約80Torrであるときには約1.5Torrか
ら約60Torrになりうる。真空供給ライン中の圧力
は、基板上の中心から端部までの蒸着の均一性を調整す
るために、アルゴンのような不活性ガスを注入すること
によりさらに調整されうる。例えば、真空ライン216
内の圧力を約2.5Torrから約10Torrまで増
加させることにより、サセプタ領域内の熱の移動が増加
し、膜厚及び蒸着された膜の均一性が増加する。
めに、真空チャック領域の外側の領域に浅い溝が付加さ
れてもよい。この熱の移動はウエハ端部に蒸着する膜厚
を減少させる。
222も存在している。アルゴンのような掃気ガスがサ
セプタ210内の複数の掃気ガス開口部224内に入
り、掃気ガスを基板の端部と反対の方に向かわせ、これ
により、処理ガスがウエハ端部表面に接触しないように
し、タングステンのような物質がその上に蒸着しないよ
うする。約120〜360個の開口部をサセプタ210
の周辺のまわりに均一に配置しうる。端部及び裏側の蒸
着を禁止するために掃気ガスを用いること自体は知られ
ている。しかし、掃気ガスは基板の端部に沿って流れチ
ャンバの処理領域内に入ったときに、掃気ガスが基板端
部を冷やして基板端部の処理ガスを薄めてしまい、これ
により基板端部の蒸着を減少させるので問題が生じる。
このため、この発明に従って、処理されにくい(refrac
tory)掃気ガイドがこのCVDチャンバには付加されて
いる。
れた処理されるウエハ14とともに示された掃気ガイド
226の断面図である。
210上に支持されている。サセプタ台210が処理位
置にあるとき、パージガイド226はサセプタ210の
上面に載せられる。掃気ガス供給ライン222は、サセ
プタ210上に真空によって取り付けられたウエハ14
の端部に対して掃気ガスを供給する。掃気ガイド226
は、掃気ガスがCVDチャンバの処理領域内に入ってい
くときに通過する、ウエハ14上の固定されたギャップ
を保持する。掃気ガスの分布を制御し、基板の中心から
端部までの蒸着の均一性を保持するのに重要な役割を果
たしているのは、5〜10ミル(0.127〜0.25
4mm)のオーダであるこの固定されたギャップであ
る。掃気ガスの流路が矢印で示されている。掃気ガイド
226は、酸化アルミニウムや窒化アルミニウムのよう
なセラミックで作られるのが好ましい。
ルミニウムのサセプタ210の端部は、掃気ガイド22
6とサセプタ210との間がくっつくのを防止するため
に、例えば約5〜10ミル(0.127〜0.254m
m)離れた複数の細かい溝221を有している。このよ
うにくっついてしまうのは、アルミニウムのような金属
(サセプタ)とセラミック(掃気ガイド)部品との間の
膨張係数の違いのために起こりうる。アルミニウムは、
処理温度においては室温と比べたときにセラミックの約
3倍も膨張する。細かい溝221は、ウエハの処理が完
了した後にサセプタ台210が下がって掃気ガイド22
6及びサセプタ210が分離されたときに、粒子が発生
するのを防止する。
性ガスである。しかし、基板の端部の蒸着を促進するた
めに、水素のような少量の反応ガスを掃気ガスに加えう
る。掃気ガスが基板の端部を冷却したとき、基板端部の
処理ガスが薄まったとき、または、もし掃気ガイドが基
板周辺を余計に覆うか陰にしてウエハ上面の周辺の蒸着
が減少するときには、掃気ガスに加えられた水素のよう
な反応ガスが、例えばWF6 と反応し、解離(dissocia
tion)を増加させ、ウエハ端部への蒸着量を増加させ、
上記の蒸着の不均一性の源を断つ。
の断面図であり、部分的に概略を示す。
この発明のチャンバ側面のスリットバルブ(図示せず)
を通して、チャンバ300内に運ばれてくる。チャンバ
300は、中央処理チャンバに接続された複数の処理チ
ャンバを有する真空処理システムの一部であってもよ
い。サセプタ台210は、モータ252により垂直方向
に可動となっている。基板14は、サセプタ台210が
スリットバルブに対して第1の位置にあるときにチャン
バ内に運ばれてくる。基板14は最初はサセプタ台21
0を一組のピン228によって支持されており、ピン2
28はサセプタ台210を通り、1個のモータアッセン
ブリによって駆動されるサセプタ台210に結合されて
いる。ステンレス鋼のベローズ229を腐食性のガスに
よるダメージから保護するために、第2の掃気ライン2
36を付加しうる。しかし、ピン228がサセプタ台2
10と一緒になって上昇したとき、それらは止め部23
0に当たる。サセプタ台210が処理ガス板310に対
向する処理位置まで上昇を続けると、ピン228はサセ
プタ台210内に沈み込み、ウエハ14はサセプタ板2
14上に置かれる。サセプタ真空供給ライン216が作
動し、基板14がサセプタ210に固定される。そし
て、点線で示すように、基板14の処理のためにサセプ
タ台210は処理ガス板310の方に向かって上方に動
かされる。それが上方に移動すると、基板14は掃気ガ
イド226に接触し、掃気ガイド226を固定された基
板14に対して心出しする。掃気ガイド226が心出し
されたとき、それはウエハに接触せず、掃気ガスを通す
ための、固定された5〜10ミル(0.127〜0.2
54mm)のギャップをウエハ14とともに保持する。
同時に、サセプタ台210は、上方に移動するときに、
掃気ガイド226の心出しもする。一組の緩衝ピン23
2がアルミニウムのサセプタ台210の側壁211上で
用いられており、サセプタ台210が垂直方向に移動し
たときに掃気ガイド226とサセプタ台210との間の
接触を最小にして、移動の際にサセプタ台210と掃気
ガイド226とが互いにこすれあうときの粒子の発生を
減少させる。
板14が処理位置に到達したとき、処理ガスが付与さ
れ、タングステンまたは他の膜の蒸着が開始される。費
やされた処理ガス及び副産物のガスは、チャンバの排気
システム240によって排気される。
ムは蒸着膜の不均一性の別の原因になっている。CVD
チャンバ300の排気システム240は、ガスを基板1
4の全周辺から均一に出すことができない。図8に示し
たように、チャンバの排気通路242は、サセプタ台2
10及びその上の基板14とチャンバ300の壁302
との間に配置される。しかし、スリットバルブを通して
基板14を出し入れする必要があるために、排気通路2
42はスリットバルブの領域でブロックされ、排気通路
242は基板を完全に取り囲むことはできない。
る排気通路242の上面図である。スリットバルブの存
在は、ウエハ14の周辺のまわりのチャンバ排気通路2
42の部分を断ち切っている。従って、排気ガスの取り
出しは均一ではなく、それによって、その領域における
費やされたガスと副産物ガスとの構成はゆがめられう
る。
プ作用(exhaust pumping )板244が図9に示すよう
に設けられている。排気ポンプ作用板244内の複数の
垂直な開口部248は、排気板244内の通路250に
よって接続されている。開口部248のサイズは少し制
限的になっており、排気ガスを強制的に通路250の方
に戻し、排気ガスはそこで均一に分散し、そしてチャン
バ排気通路242によってチャンバ300の外に引かれ
る。こうして排気ガスは、ポンプ作用板244によって
もっと均一に分散し、ガスはもっと平均してウエハ14
周辺の付近から(from about the periphery)排出され
る。
の、ほぼウエハ14が処理される位置に取り付けられて
いる。従って、排気ガスは均等に配置された垂直な開口
部内に入って、処理中のウエハ14の全周のまわりの1
個の通路250に入る。こうして、排気ガスは排気シス
テム240内へもっと均一に通っていく。
サセプタ台210は再び下降する。サセプタ台210
が、持ち上げピン228がサセプタ板214から再び突
き出る位置に近づいたとき、処理されたウエハをピン2
28によってサセプタ板214の表面上に持ち上げるこ
とができるように、真空ライン216に接続された真空
源が断たれる。サセプタ台210及びウエハ14は、ウ
エハ14をチャンバから取り出せるように、スリットバ
ルブに対向する、それらの最初の位置まで下げられる。
ド226の代わりに、図10及び11に示すような複数
の一体化した配置のピン260を採用している。上記の
掃気ガイドの代わりに配置ピンを使用することにより、
ウエハの傾斜した端部の上端を含む、すなわち端部を除
外することなく(with zero edge exclusion)、ウエハ
の上面全体にタングステンを蒸着することが可能にな
る。
配置ピン260によって取り囲まれたウエハ14の上面
図である。掃気ガイドピン260は、図10に図示され
た実施例では6個であるが、酸化アルミニウムのような
処理されにくい(refractory)材料やアルミニウムのよ
うな金属から作ることができる。3個のピン260A、
260B及び260Cが、ウエハ端部がピンに対して整
列するようにウエハ14をそろえる。これらのピン26
0A、260B及び260Cは、通常のウエハサイズ
(直径200mm)に合わせられており、ウエハ14と
掃気ガス通路262との間のギャップを合わせる。従っ
て、ギャップは大部分のウエハ14に対して最適化され
ている。もし特定のウエハが公称サイズより小さいか大
きい場合は、ウエハのまわりのギャップは、一辺から他
辺まで約2〜20ミル(0.0508〜0.508m
m)の間で変動する。残りの3個のピン260D、E及
びFはウエハの端部と接触せず、それらの間を掃気ガス
が通過しうるようにウエハとピンとの間に固定されたギ
ャップが提供される。図11は、サセプタ板210に取
り付けられた配置ピン260Aの断面図である。この実
施例は処理されにくい掃気ガイドを省き、掃気ガイドの
ために蒸着ガスに対して陰になるウエハ端部のすべての
部分をなくし、粒子発生源となりうるものを除去する。
掃気ガスの混合、例えば水素のような反応性ガスの付加
を適正に調節することによって、ウエハ端部の非同質性
が補償されうる。
セプタは常に処理温度にされるため、蒸着の均一性を向
上させる。これにより、ウエハ及びチャンバの温度変動
が減少し、蒸着の均一性が向上する。
れてきたが、当業者には知られているように、部品、材
料及び蒸着条件の種々の代替が可能である。例えば、サ
セプタはサセプタ台とそれに固定された前面板とを備え
ていて、前面板は上記の真空及び掃気ガスへの開口部を
有し、サセプタ台はガスラインを有し、ガスラインは前
面板の種々の開口部に接続されていてもよい。他の変形
は当業者には明白であり、ここで述べたことに含まれる
ことが意図されている。この発明の範囲は特許請求の範
囲によってのみ限定される。
接触せず、これにより基板周辺の温度低下及び基板にわ
たる温度の不均一性の原因が取り除かれ、チャンバの処
理部分に入る掃気ガスの量が制限される。これに加え
て、基板の中心から端部に至る温度の均一性を制御する
ための不活性ガスの源を真空ライン中に設けたこと、並
びに、余分の及び副産物のガスのチャンバからの排出の
均一性を向上させるための、チャンバの真空排出板を設
けたことが、このCVDチャンバのさらに改良された点
である。また、この抵抗によって加熱されるサセプタ
は、中心から端部に至る温度均一性を+/−2℃に維持
することができる。
た断面図である。
あり、図2( b) は図2( a)に示したコイルの斜視図
である。
る。
れる基板とともに示された掃気ガイドの断面図である。
示す断面図である。
る。
g plate )の上面図である。
断面図である。
6…真空ライン、221…細かい溝、222…掃気ガス
ライン、226…掃気ガイド、260…配置ピン。
Claims (17)
- 【請求項1】 先行ガス(precursor gas)の源、サセ
プタ、真空排気システムを含む化学気相蒸着の単一基板
式ないしは枚葉式(single substrate)真空チャンバにお
いて、 a) 前記サセプタの基板支持部付近のサセプタ内に備
えられ、前記基板支持部を均一に加熱する抵抗コイル
と、 b) 前記真空排気システムの真空源とは分離した真空
源に接続され、前記基板支持部に基板を吸引させる為の
真空供給ラインと、 c) 前記基板支持部の外側を囲んで設けられた複数の
開口部に接続され、処理ガスが基板端部表面に接触する
のを防止する為の掃気ガスラインと、 d) 基板上に一定の掃気ガス流路を形成し、掃気ガス
分布を制御する手段と、 を備えたチャンバ。 - 【請求項2】 前記加熱コイルが単一のコイルである請
求項1記載のチャンバ。 - 【請求項3】 前記加熱コイルが、サセプタにわたって
約250から650℃の温度を提供しうる請求項2記載
のチャンバ。 - 【請求項4】 前記加熱コイルが、前記サセプタにわた
ってその中心からその端部まで+/−2℃の範囲内で一
定の温度を提供しうる請求項3記載のチャンバ。 - 【請求項5】 サセプタにわたる真空及び温度の均一性
を制御するために、前記真空供給ラインが不活性ガス源
及び反応性ガス源に接続されている請求項2記載のチャ
ンバ。 - 【請求項6】 前記サセプタの表面が、前記サセプタを
通して真空供給ラインに接続されている通路に接続され
た複数の開口部を有し、前記通路及び開口部は、処理中
に基板によって占められる領域内にある請求項1記載の
チャンバ。 - 【請求項7】 前記サセプタ上に支持された処理されに
くい(refractory)掃気ガイドが、掃気ガスの通路を提
供するために前記サセプタ及び前記基板の間に固定され
たギャップ(fixed gap)を提供する請求項1記載のチ
ャンバ。 - 【請求項8】 くっつけることなく(without stickin
g)前記掃気ガイドを支持するために、前記サセプタ
が、前記掃気ガスの開口部の領域の外に複数の細かい溝
を有している請求項7記載のチャンバ。 - 【請求項9】 前記基板及び前記掃気ガスの間の所定の
ギャップを固定するために、前記サセプタ上の1組の配
置ピンが、前記基板を前記サセプタ上の最適な位置にガ
イドする請求項1記載のチャンバ。 - 【請求項10】 前記排気システム内に排気プレートを
さらに備え、排気ガスが前記基板の回りからより均一に
回収される(withdrawn)ように、前記排気プレートは
その裏側の全周囲付近の通路(channel about the whol
e circumference)に接続された複数の小さな垂直の通
路を有する請求項1記載のチャンバ。 - 【請求項11】 前記サセプタが、これに取り付けられ
る面板を有しており、前記面板が、前記サセプタ内の掃
気及び真空ラインに接続される開口部を有している請求
項1記載のチャンバ。 - 【請求項12】 単一基板式ないしは枚葉式の化学気相
蒸着チャンバ内の基板上に薄膜を蒸着する方法であっ
て、 a) 約100ミリトールから約700トールのチャン
バ圧力において約250〜650℃の温度に加熱された
サセプタ上に前記基板を支持するステップ、 b) 前記サセプタの基板支持部に接続された真空供給
ラインによって前記基板を吸引するステップ、 c) 処理ガスが前記基板の端部に接触するのを防止す
るために、前記基板端部の外側に設けられた前記サセプ
タの複数の開口部から、前記基板の端部上に形成された
固定流路を通して掃気ガスを流すステップ、 d) 蒸着先行ガスを前記チャンバ内に通すステップを
備えた方法(process)。 - 【請求項13】 前記先行ガスがWF6 である請求項
12記載の方法。 - 【請求項14】 前記掃気ガスが反応性ガスを含む請求
項12記載の方法。 - 【請求項15】 前記掃気ガスが不活性ガス及び水素の
混合物を含む請求項12記載の方法。 - 【請求項16】 前記掃気ガスが前記基板の底部の端部
に向けられる請求項12記載の方法。 - 【請求項17】 不活性ガスが前記基板に対する真空内
の圧力を調節するために用いられる請求項12記載の方
法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US4296193A | 1993-04-05 | 1993-04-05 | |
US08/042961 | 1993-04-05 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH06306615A JPH06306615A (ja) | 1994-11-01 |
JP2918785B2 true JP2918785B2 (ja) | 1999-07-12 |
Family
ID=21924692
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6067474A Expired - Lifetime JP2918785B2 (ja) | 1993-04-05 | 1994-04-05 | 改良された化学気相蒸着チャンバおよび方法 |
Country Status (5)
Country | Link |
---|---|
US (7) | US5800686A (ja) |
EP (2) | EP0619381B1 (ja) |
JP (1) | JP2918785B2 (ja) |
KR (1) | KR100190726B1 (ja) |
DE (1) | DE69411307T2 (ja) |
Families Citing this family (393)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5843233A (en) * | 1990-07-16 | 1998-12-01 | Novellus Systems, Inc. | Exclusion guard and gas-based substrate protection for chemical vapor deposition apparatus |
US5620525A (en) * | 1990-07-16 | 1997-04-15 | Novellus Systems, Inc. | Apparatus for supporting a substrate and introducing gas flow doximate to an edge of the substrate |
US5304248A (en) * | 1990-12-05 | 1994-04-19 | Applied Materials, Inc. | Passive shield for CVD wafer processing which provides frontside edge exclusion and prevents backside depositions |
US5855687A (en) * | 1990-12-05 | 1999-01-05 | Applied Materials, Inc. | Substrate support shield in wafer processing reactors |
US5800686A (en) * | 1993-04-05 | 1998-09-01 | Applied Materials, Inc. | Chemical vapor deposition chamber with substrate edge protection |
TW277139B (ja) * | 1993-09-16 | 1996-06-01 | Hitachi Seisakusyo Kk | |
US6544379B2 (en) * | 1993-09-16 | 2003-04-08 | Hitachi, Ltd. | Method of holding substrate and substrate holding system |
US5556476A (en) * | 1994-02-23 | 1996-09-17 | Applied Materials, Inc. | Controlling edge deposition on semiconductor substrates |
US6033480A (en) * | 1994-02-23 | 2000-03-07 | Applied Materials, Inc. | Wafer edge deposition elimination |
JP4108119B2 (ja) * | 1994-02-23 | 2008-06-25 | アプライド マテリアルズ, インコーポレイテッド | 改良型化学気相堆積チャンバ |
US5766365A (en) * | 1994-02-23 | 1998-06-16 | Applied Materials, Inc. | Removable ring for controlling edge deposition in substrate processing apparatus |
US5888304A (en) * | 1996-04-02 | 1999-03-30 | Applied Materials, Inc. | Heater with shadow ring and purge above wafer surface |
US5476548A (en) * | 1994-06-20 | 1995-12-19 | Applied Materials, Inc. | Reducing backside deposition in a substrate processing apparatus through the use of a shadow ring |
US5705080A (en) * | 1994-07-06 | 1998-01-06 | Applied Materials, Inc. | Plasma-inert cover and plasma cleaning process |
US5730801A (en) * | 1994-08-23 | 1998-03-24 | Applied Materials, Inc. | Compartnetalized substrate processing chamber |
US6365495B2 (en) | 1994-11-14 | 2002-04-02 | Applied Materials, Inc. | Method for performing metallo-organic chemical vapor deposition of titanium nitride at reduced temperature |
US5558717A (en) * | 1994-11-30 | 1996-09-24 | Applied Materials | CVD Processing chamber |
US5885356A (en) * | 1994-11-30 | 1999-03-23 | Applied Materials, Inc. | Method of reducing residue accumulation in CVD chamber using ceramic lining |
US5985089A (en) * | 1995-05-25 | 1999-11-16 | Tegal Corporation | Plasma etch system |
KR0165484B1 (ko) * | 1995-11-28 | 1999-02-01 | 김광호 | 탄탈륨산화막 증착 형성방법 및 그 장치 |
US5860640A (en) * | 1995-11-29 | 1999-01-19 | Applied Materials, Inc. | Semiconductor wafer alignment member and clamp ring |
US5895530A (en) * | 1996-02-26 | 1999-04-20 | Applied Materials, Inc. | Method and apparatus for directing fluid through a semiconductor processing chamber |
US5709772A (en) * | 1996-03-29 | 1998-01-20 | Applied Materials, Inc. | Non-plasma halogenated gas flow to prevent metal residues |
US5844205A (en) * | 1996-04-19 | 1998-12-01 | Applied Komatsu Technology, Inc. | Heated substrate support structure |
US5761023A (en) * | 1996-04-25 | 1998-06-02 | Applied Materials, Inc. | Substrate support with pressure zones having reduced contact area and temperature feedback |
US5885353A (en) * | 1996-06-21 | 1999-03-23 | Micron Technology, Inc. | Thermal conditioning apparatus |
US5837058A (en) * | 1996-07-12 | 1998-11-17 | Applied Materials, Inc. | High temperature susceptor |
US5993916A (en) * | 1996-07-12 | 1999-11-30 | Applied Materials, Inc. | Method for substrate processing with improved throughput and yield |
US5846332A (en) * | 1996-07-12 | 1998-12-08 | Applied Materials, Inc. | Thermally floating pedestal collar in a chemical vapor deposition chamber |
JPH1064847A (ja) * | 1996-07-16 | 1998-03-06 | Applied Materials Inc | タングステン材料の成膜方法、サセプタ及び成膜装置 |
US5653808A (en) * | 1996-08-07 | 1997-08-05 | Macleish; Joseph H. | Gas injection system for CVD reactors |
US6602348B1 (en) * | 1996-09-17 | 2003-08-05 | Applied Materials, Inc. | Substrate cooldown chamber |
EP0938596B1 (en) | 1996-09-30 | 2003-11-19 | Lam Research Corporation | Apparatus for reducing polymer deposition on substrate support |
US6120609A (en) * | 1996-10-25 | 2000-09-19 | Applied Materials, Inc. | Self-aligning lift mechanism |
US5951776A (en) * | 1996-10-25 | 1999-09-14 | Applied Materials, Inc. | Self aligning lift mechanism |
US6033478A (en) * | 1996-11-05 | 2000-03-07 | Applied Materials, Inc. | Wafer support with improved temperature control |
US6444037B1 (en) | 1996-11-13 | 2002-09-03 | Applied Materials, Inc. | Chamber liner for high temperature processing chamber |
US5968587A (en) * | 1996-11-13 | 1999-10-19 | Applied Materials, Inc. | Systems and methods for controlling the temperature of a vapor deposition apparatus |
US5879574A (en) * | 1996-11-13 | 1999-03-09 | Applied Materials, Inc. | Systems and methods for detecting end of chamber clean in a thermal (non-plasma) process |
US6019848A (en) * | 1996-11-13 | 2000-02-01 | Applied Materials, Inc. | Lid assembly for high temperature processing chamber |
US5873781A (en) * | 1996-11-14 | 1999-02-23 | Bally Gaming International, Inc. | Gaming machine having truly random results |
US6189482B1 (en) | 1997-02-12 | 2001-02-20 | Applied Materials, Inc. | High temperature, high flow rate chemical vapor deposition apparatus and related methods |
US6035101A (en) * | 1997-02-12 | 2000-03-07 | Applied Materials, Inc. | High temperature multi-layered alloy heater assembly and related methods |
US5955858A (en) | 1997-02-14 | 1999-09-21 | Applied Materials, Inc. | Mechanically clamping robot wrist |
US5977519A (en) | 1997-02-28 | 1999-11-02 | Applied Komatsu Technology, Inc. | Heating element with a diamond sealing material |
US6174377B1 (en) * | 1997-03-03 | 2001-01-16 | Genus, Inc. | Processing chamber for atomic layer deposition processes |
US6120608A (en) * | 1997-03-12 | 2000-09-19 | Applied Materials, Inc. | Workpiece support platen for semiconductor process chamber |
JPH10284360A (ja) * | 1997-04-02 | 1998-10-23 | Hitachi Ltd | 基板温度制御装置及び方法 |
US6153260A (en) | 1997-04-11 | 2000-11-28 | Applied Materials, Inc. | Method for heating exhaust gas in a substrate reactor |
US6226452B1 (en) * | 1997-05-19 | 2001-05-01 | Texas Instruments Incorporated | Radiant chamber for simultaneous rapid die attach and lead frame embed for ceramic packaging |
AT411304B (de) * | 1997-06-18 | 2003-11-25 | Sez Ag | Träger für scheibenförmige gegenstände, insbesondere silizium-wafer |
US5899653A (en) * | 1997-06-23 | 1999-05-04 | Applied Materials, Inc. | Two-stage vacuum bellows |
US6280790B1 (en) * | 1997-06-30 | 2001-08-28 | Applied Materials, Inc. | Reducing the deposition rate of volatile contaminants onto an optical component of a substrate processing system |
TW524873B (en) | 1997-07-11 | 2003-03-21 | Applied Materials Inc | Improved substrate supporting apparatus and processing chamber |
US6083321A (en) * | 1997-07-11 | 2000-07-04 | Applied Materials, Inc. | Fluid delivery system and method |
US6063440A (en) | 1997-07-11 | 2000-05-16 | Applied Materials, Inc. | Method for aligning a wafer |
US5944422A (en) * | 1997-07-11 | 1999-08-31 | A. G. Associates (Israel) Ltd. | Apparatus for measuring the processing temperature of workpieces particularly semiconductor wafers |
US5985033A (en) | 1997-07-11 | 1999-11-16 | Applied Materials, Inc. | Apparatus and method for delivering a gas |
JPH1136076A (ja) * | 1997-07-16 | 1999-02-09 | Tokyo Electron Ltd | Cvd成膜装置およびcvd成膜方法 |
US5870526A (en) * | 1997-07-17 | 1999-02-09 | Steag-Ast | Inflatable elastomeric element for rapid thermal processing (RTP) system |
US6186092B1 (en) | 1997-08-19 | 2001-02-13 | Applied Materials, Inc. | Apparatus and method for aligning and controlling edge deposition on a substrate |
US6110556A (en) * | 1997-10-17 | 2000-08-29 | Applied Materials, Inc. | Lid assembly for a process chamber employing asymmetric flow geometries |
US6118100A (en) * | 1997-11-26 | 2000-09-12 | Mattson Technology, Inc. | Susceptor hold-down mechanism |
US6210483B1 (en) | 1997-12-02 | 2001-04-03 | Applied Materials, Inc. | Anti-notch thinning heater |
US6063441A (en) * | 1997-12-02 | 2000-05-16 | Applied Materials, Inc. | Processing chamber and method for confining plasma |
US6296712B1 (en) * | 1997-12-02 | 2001-10-02 | Applied Materials, Inc. | Chemical vapor deposition hardware and process |
US6270582B1 (en) * | 1997-12-15 | 2001-08-07 | Applied Materials, Inc | Single wafer load lock chamber for pre-processing and post-processing wafers in a vacuum processing system |
US6093281A (en) * | 1998-02-26 | 2000-07-25 | International Business Machines Corp. | Baffle plate design for decreasing conductance lost during precipitation of polymer precursors in plasma etching chambers |
US5961724A (en) * | 1998-03-30 | 1999-10-05 | Lam Research Corporation | Techniques for reducing particulate contamination on a substrate during processing |
JPH11297800A (ja) * | 1998-04-09 | 1999-10-29 | Nec Kyushu Ltd | 半導体装置製造用装置 |
US6596086B1 (en) * | 1998-04-28 | 2003-07-22 | Shin-Etsu Handotai Co., Ltd. | Apparatus for thin film growth |
US6179924B1 (en) | 1998-04-28 | 2001-01-30 | Applied Materials, Inc. | Heater for use in substrate processing apparatus to deposit tungsten |
US6146504A (en) * | 1998-05-21 | 2000-11-14 | Applied Materials, Inc. | Substrate support and lift apparatus and method |
US6027605A (en) * | 1998-05-22 | 2000-02-22 | Raines Technologies, Inc. | Plasma etching apparatus and method and apparatus for verifying a wafer |
US6146463A (en) * | 1998-06-12 | 2000-11-14 | Applied Materials, Inc. | Apparatus and method for aligning a substrate on a support member |
US6040011A (en) * | 1998-06-24 | 2000-03-21 | Applied Materials, Inc. | Substrate support member with a purge gas channel and pumping system |
US6016611A (en) * | 1998-07-13 | 2000-01-25 | Applied Komatsu Technology, Inc. | Gas flow control in a substrate processing system |
US6096135A (en) * | 1998-07-21 | 2000-08-01 | Applied Materials, Inc. | Method and apparatus for reducing contamination of a substrate in a substrate processing system |
US6190732B1 (en) * | 1998-09-03 | 2001-02-20 | Cvc Products, Inc. | Method and system for dispensing process gas for fabricating a device on a substrate |
US20030101938A1 (en) * | 1998-10-27 | 2003-06-05 | Applied Materials, Inc. | Apparatus for the deposition of high dielectric constant films |
US6231716B1 (en) * | 1998-11-09 | 2001-05-15 | Applied Materials, Inc. | Processing chamber with rapid wafer exchange |
JP4317608B2 (ja) * | 1999-01-18 | 2009-08-19 | 東京エレクトロン株式会社 | 成膜装置 |
JP3352418B2 (ja) * | 1999-01-28 | 2002-12-03 | キヤノン株式会社 | 減圧処理方法及び減圧処理装置 |
JP2000286215A (ja) * | 1999-02-09 | 2000-10-13 | Applied Materials Inc | 低減された温度で窒化チタンの金属有機化学気相堆積をする方法 |
US6159299A (en) * | 1999-02-09 | 2000-12-12 | Applied Materials, Inc. | Wafer pedestal with a purge ring |
US6610150B1 (en) | 1999-04-02 | 2003-08-26 | Asml Us, Inc. | Semiconductor wafer processing system with vertically-stacked process chambers and single-axis dual-wafer transfer system |
US6464795B1 (en) | 1999-05-21 | 2002-10-15 | Applied Materials, Inc. | Substrate support member for a processing chamber |
US20030051656A1 (en) | 1999-06-14 | 2003-03-20 | Charles Chiun-Chieh Yang | Method for the preparation of an epitaxial silicon wafer with intrinsic gettering |
US6821571B2 (en) * | 1999-06-18 | 2004-11-23 | Applied Materials Inc. | Plasma treatment to enhance adhesion and to minimize oxidation of carbon-containing layers |
US6261407B1 (en) * | 1999-06-29 | 2001-07-17 | Lam Research Corporation | Method and apparatus for removal of thin films from wafers |
US6586343B1 (en) * | 1999-07-09 | 2003-07-01 | Applied Materials, Inc. | Method and apparatus for directing constituents through a processing chamber |
US6530992B1 (en) * | 1999-07-09 | 2003-03-11 | Applied Materials, Inc. | Method of forming a film in a chamber and positioning a substitute in a chamber |
US6163015A (en) * | 1999-07-21 | 2000-12-19 | Moore Epitaxial, Inc. | Substrate support element |
US6354832B1 (en) * | 1999-07-28 | 2002-03-12 | Tokyo Electron Limited | Substrate processing apparatus and substrate processing method |
US6206976B1 (en) | 1999-08-27 | 2001-03-27 | Lucent Technologies Inc. | Deposition apparatus and related method with controllable edge exclusion |
US6375748B1 (en) | 1999-09-01 | 2002-04-23 | Applied Materials, Inc. | Method and apparatus for preventing edge deposition |
US6291347B1 (en) | 1999-10-08 | 2001-09-18 | Texas Instruments Incorporated | Method and system for constructing semiconductor devices |
US6184154B1 (en) * | 1999-10-13 | 2001-02-06 | Seh America, Inc. | Method of processing the backside of a wafer within an epitaxial reactor chamber |
US6541369B2 (en) | 1999-12-07 | 2003-04-01 | Applied Materials, Inc. | Method and apparatus for reducing fixed charges in a semiconductor device |
US6589352B1 (en) * | 1999-12-10 | 2003-07-08 | Applied Materials, Inc. | Self aligning non contact shadow ring process kit |
US6328807B1 (en) * | 1999-12-14 | 2001-12-11 | Corning Incorporated | Chuck heater for improved planar deposition process |
US6949143B1 (en) * | 1999-12-15 | 2005-09-27 | Applied Materials, Inc. | Dual substrate loadlock process equipment |
US6503330B1 (en) | 1999-12-22 | 2003-01-07 | Genus, Inc. | Apparatus and method to achieve continuous interface and ultrathin film during atomic layer deposition |
JP4419237B2 (ja) * | 1999-12-22 | 2010-02-24 | 東京エレクトロン株式会社 | 成膜装置及び被処理体の処理方法 |
US6551399B1 (en) | 2000-01-10 | 2003-04-22 | Genus Inc. | Fully integrated process for MIM capacitors using atomic layer deposition |
US6494955B1 (en) | 2000-02-15 | 2002-12-17 | Applied Materials, Inc. | Ceramic substrate support |
US6223447B1 (en) * | 2000-02-15 | 2001-05-01 | Applied Materials, Inc. | Fastening device for a purge ring |
US6350320B1 (en) * | 2000-02-22 | 2002-02-26 | Applied Materials, Inc. | Heater for processing chamber |
WO2001066817A1 (en) * | 2000-03-09 | 2001-09-13 | Semix Incorporated | Wafer processing apparatus and method |
US6394023B1 (en) | 2000-03-27 | 2002-05-28 | Applied Materials, Inc. | Process kit parts and method for using same |
US6444027B1 (en) * | 2000-05-08 | 2002-09-03 | Memc Electronic Materials, Inc. | Modified susceptor for use in chemical vapor deposition process |
JP4422295B2 (ja) * | 2000-05-17 | 2010-02-24 | キヤノンアネルバ株式会社 | Cvd装置 |
CN1441961A (zh) * | 2000-06-30 | 2003-09-10 | Memc电子材料有限公司 | 形成具有洁净区的硅片的方法和装置 |
US6339016B1 (en) | 2000-06-30 | 2002-01-15 | Memc Electronic Materials, Inc. | Method and apparatus for forming an epitaxial silicon wafer with a denuded zone |
US6599815B1 (en) | 2000-06-30 | 2003-07-29 | Memc Electronic Materials, Inc. | Method and apparatus for forming a silicon wafer with a denuded zone |
US7011039B1 (en) | 2000-07-07 | 2006-03-14 | Applied Materials, Inc. | Multi-purpose processing chamber with removable chamber liner |
US6802906B2 (en) * | 2000-07-21 | 2004-10-12 | Applied Materials, Inc. | Emissivity-change-free pumping plate kit in a single wafer chamber |
AU2001288232A1 (en) * | 2000-08-10 | 2002-02-25 | Tokyo Electron Limited | Method and apparatus for tuning a plasma reactor chamber |
US6503331B1 (en) * | 2000-09-12 | 2003-01-07 | Applied Materials, Inc. | Tungsten chamber with stationary heater |
KR20080109062A (ko) | 2000-09-15 | 2008-12-16 | 어플라이드 머티어리얼스, 인코포레이티드 | 처리 장비용 더블 이중 슬롯 로드록 |
US6891627B1 (en) | 2000-09-20 | 2005-05-10 | Kla-Tencor Technologies Corp. | Methods and systems for determining a critical dimension and overlay of a specimen |
US6694284B1 (en) | 2000-09-20 | 2004-02-17 | Kla-Tencor Technologies Corp. | Methods and systems for determining at least four properties of a specimen |
US6782337B2 (en) | 2000-09-20 | 2004-08-24 | Kla-Tencor Technologies Corp. | Methods and systems for determining a critical dimension an a presence of defects on a specimen |
US7130029B2 (en) | 2000-09-20 | 2006-10-31 | Kla-Tencor Technologies Corp. | Methods and systems for determining an adhesion characteristic and a thickness of a specimen |
US6812045B1 (en) | 2000-09-20 | 2004-11-02 | Kla-Tencor, Inc. | Methods and systems for determining a characteristic of a specimen prior to, during, or subsequent to ion implantation |
WO2002025708A2 (en) | 2000-09-20 | 2002-03-28 | Kla-Tencor-Inc. | Methods and systems for semiconductor fabrication processes |
US6673637B2 (en) | 2000-09-20 | 2004-01-06 | Kla-Tencor Technologies | Methods and systems for determining a presence of macro defects and overlay of a specimen |
US6617173B1 (en) | 2000-10-11 | 2003-09-09 | Genus, Inc. | Integration of ferromagnetic films with ultrathin insulating film using atomic layer deposition |
US20030190424A1 (en) * | 2000-10-20 | 2003-10-09 | Ofer Sneh | Process for tungsten silicide atomic layer deposition |
US6630201B2 (en) * | 2001-04-05 | 2003-10-07 | Angstron Systems, Inc. | Adsorption process for atomic layer deposition |
CN101038863B (zh) * | 2001-02-15 | 2011-07-06 | 东京毅力科创株式会社 | 被处理件的处理方法及处理装置 |
US6709721B2 (en) | 2001-03-28 | 2004-03-23 | Applied Materials Inc. | Purge heater design and process development for the improvement of low k film properties |
US6795292B2 (en) | 2001-05-15 | 2004-09-21 | Dennis Grimard | Apparatus for regulating temperature of a process kit in a semiconductor wafer-processing chamber |
US6506994B2 (en) * | 2001-06-15 | 2003-01-14 | Applied Materials, Inc. | Low profile thick film heaters in multi-slot bake chamber |
EP1274121A1 (en) | 2001-06-29 | 2003-01-08 | Infineon Technologies SC300 GmbH & Co. KG | Wafer chuck for supporting a semiconductor wafer |
JP2003060012A (ja) * | 2001-08-08 | 2003-02-28 | Asm Japan Kk | 半導体処理用反応チャンバ |
US7090727B2 (en) * | 2001-08-17 | 2006-08-15 | Micron Technology, Inc. | Heated gas line body feedthrough for vapor and gas delivery systems and methods for employing same |
US7316966B2 (en) | 2001-09-21 | 2008-01-08 | Applied Materials, Inc. | Method for transferring substrates in a load lock chamber |
JP2003197532A (ja) * | 2001-12-21 | 2003-07-11 | Sumitomo Mitsubishi Silicon Corp | エピタキシャル成長方法及びエピタキシャル成長用サセプター |
KR100453014B1 (ko) * | 2001-12-26 | 2004-10-14 | 주성엔지니어링(주) | Cvd 장치 |
JP4574987B2 (ja) * | 2002-01-10 | 2010-11-04 | 東京エレクトロン株式会社 | 処理装置 |
US6730175B2 (en) | 2002-01-22 | 2004-05-04 | Applied Materials, Inc. | Ceramic substrate support |
DE10208450B4 (de) * | 2002-02-27 | 2004-09-16 | Infineon Technologies Ag | Verfahren zum Abscheiden dünner Schichten mittels ALD/CVD-Prozessen in Verbindung mit schnellen thermischen Prozessen |
US20030168174A1 (en) * | 2002-03-08 | 2003-09-11 | Foree Michael Todd | Gas cushion susceptor system |
US6576483B1 (en) * | 2002-03-19 | 2003-06-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Backside cannelure to provide for wafer shift detection |
US7005601B2 (en) | 2002-04-18 | 2006-02-28 | Applied Materials, Inc. | Thermal flux processing by scanning |
US6987240B2 (en) * | 2002-04-18 | 2006-01-17 | Applied Materials, Inc. | Thermal flux processing by scanning |
US6776850B2 (en) * | 2002-06-08 | 2004-08-17 | Taiwan Semiconductor Manufacturing Co., Ltd | Preventative maintenance aided tool for CVD chamber |
US6963043B2 (en) * | 2002-08-28 | 2005-11-08 | Tokyo Electron Limited | Asymmetrical focus ring |
JP4083512B2 (ja) * | 2002-08-30 | 2008-04-30 | 東京エレクトロン株式会社 | 基板処理装置 |
US7252738B2 (en) * | 2002-09-20 | 2007-08-07 | Lam Research Corporation | Apparatus for reducing polymer deposition on a substrate and substrate support |
US20040083976A1 (en) * | 2002-09-25 | 2004-05-06 | Silterra Malaysia Sdn. Bhd. | Modified deposition ring to eliminate backside and wafer edge coating |
US6874510B2 (en) * | 2003-02-07 | 2005-04-05 | Lsi Logic Corporation | Method to use a laser to perform the edge clean operation on a semiconductor wafer |
US7015426B2 (en) * | 2003-02-11 | 2006-03-21 | Genus, Inc. | Purged heater-susceptor for an ALD/CVD reactor |
US7033443B2 (en) * | 2003-03-28 | 2006-04-25 | Axcelis Technologies, Inc. | Gas-cooled clamp for RTP |
KR100522727B1 (ko) * | 2003-03-31 | 2005-10-20 | 주식회사 아이피에스 | 박막증착용 반응용기 |
US20040194885A1 (en) * | 2003-04-04 | 2004-10-07 | Stacey David A. | Degas chamber particle shield |
US20040261946A1 (en) | 2003-04-24 | 2004-12-30 | Tokyo Electron Limited | Plasma processing apparatus, focus ring, and susceptor |
US20040250774A1 (en) * | 2003-06-16 | 2004-12-16 | Brent Elliot | Wafer heater with protected heater element |
US7024105B2 (en) * | 2003-10-10 | 2006-04-04 | Applied Materials Inc. | Substrate heater assembly |
US7207766B2 (en) | 2003-10-20 | 2007-04-24 | Applied Materials, Inc. | Load lock chamber for large area substrate processing system |
US20050109276A1 (en) * | 2003-11-25 | 2005-05-26 | Applied Materials, Inc. | Thermal chemical vapor deposition of silicon nitride using BTBAS bis(tertiary-butylamino silane) in a single wafer chamber |
WO2005081283A2 (en) * | 2004-02-13 | 2005-09-01 | Asm America, Inc. | Substrate support system for reduced autodoping and backside deposition |
US20060051966A1 (en) * | 2004-02-26 | 2006-03-09 | Applied Materials, Inc. | In-situ chamber clean process to remove by-product deposits from chemical vapor etch chamber |
US20050230350A1 (en) | 2004-02-26 | 2005-10-20 | Applied Materials, Inc. | In-situ dry clean chamber for front end of line fabrication |
US7780793B2 (en) * | 2004-02-26 | 2010-08-24 | Applied Materials, Inc. | Passivation layer formation by plasma clean process to reduce native oxide growth |
US20050217569A1 (en) * | 2004-04-01 | 2005-10-06 | Nirmal Ramaswamy | Methods of depositing an elemental silicon-comprising material over a semiconductor substrate and methods of cleaning an internal wall of a chamber |
US20050217585A1 (en) * | 2004-04-01 | 2005-10-06 | Blomiley Eric R | Substrate susceptor for receiving a substrate to be deposited upon |
US20050223993A1 (en) * | 2004-04-08 | 2005-10-13 | Blomiley Eric R | Deposition apparatuses; methods for assessing alignments of substrates within deposition apparatuses; and methods for assessing thicknesses of deposited layers within deposition apparatuses |
US20050223985A1 (en) * | 2004-04-08 | 2005-10-13 | Blomiley Eric R | Deposition apparatuses, methods of assessing the temperature of semiconductor wafer substrates within deposition apparatuses, and methods for deposition of epitaxial semiconductive material |
US8236105B2 (en) * | 2004-04-08 | 2012-08-07 | Applied Materials, Inc. | Apparatus for controlling gas flow in a semiconductor substrate processing chamber |
EP1738251A2 (en) * | 2004-04-16 | 2007-01-03 | Cascade Basic Research Corp. | Modelling relationships within an on-line connectivity universe |
KR100587681B1 (ko) * | 2004-05-07 | 2006-06-08 | 삼성전자주식회사 | 반도체 제조용 챔버의 히터블록 장착용 라인의 실링구조 |
US7497414B2 (en) | 2004-06-14 | 2009-03-03 | Applied Materials, Inc. | Curved slit valve door with flexible coupling |
US7253107B2 (en) * | 2004-06-17 | 2007-08-07 | Asm International N.V. | Pressure control system |
US7628863B2 (en) * | 2004-08-03 | 2009-12-08 | Applied Materials, Inc. | Heated gas box for PECVD applications |
US20060084283A1 (en) * | 2004-10-20 | 2006-04-20 | Paranjpe Ajit P | Low temperature sin deposition methods |
KR20060041497A (ko) * | 2004-11-09 | 2006-05-12 | 동부일렉트로닉스 주식회사 | 건식 식각장치 |
US7552521B2 (en) * | 2004-12-08 | 2009-06-30 | Tokyo Electron Limited | Method and apparatus for improved baffle plate |
US20060130971A1 (en) * | 2004-12-21 | 2006-06-22 | Applied Materials, Inc. | Apparatus for generating plasma by RF power |
US7601242B2 (en) * | 2005-01-11 | 2009-10-13 | Tokyo Electron Limited | Plasma processing system and baffle assembly for use in plasma processing system |
US20080314320A1 (en) * | 2005-02-04 | 2008-12-25 | Component Re-Engineering Company, Inc. | Chamber Mount for High Temperature Application of AIN Heaters |
JP4590363B2 (ja) * | 2005-03-16 | 2010-12-01 | 日本碍子株式会社 | ガス供給部材及びそれを用いた処理装置 |
US20060225654A1 (en) * | 2005-03-29 | 2006-10-12 | Fink Steven T | Disposable plasma reactor materials and methods |
US8282768B1 (en) | 2005-04-26 | 2012-10-09 | Novellus Systems, Inc. | Purging of porogen from UV cure chamber |
US8617672B2 (en) | 2005-07-13 | 2013-12-31 | Applied Materials, Inc. | Localized surface annealing of components for substrate processing chambers |
US7550381B2 (en) * | 2005-07-18 | 2009-06-23 | Applied Materials, Inc. | Contact clean by remote plasma and repair of silicide surface |
US7429718B2 (en) * | 2005-08-02 | 2008-09-30 | Applied Materials, Inc. | Heating and cooling of substrate support |
US8038837B2 (en) * | 2005-09-02 | 2011-10-18 | Tokyo Electron Limited | Ring-shaped component for use in a plasma processing, plasma processing apparatus and outer ring-shaped member |
US20070082507A1 (en) * | 2005-10-06 | 2007-04-12 | Applied Materials, Inc. | Method and apparatus for the low temperature deposition of doped silicon nitride films |
JP4844086B2 (ja) * | 2005-10-28 | 2011-12-21 | 三菱電機株式会社 | 半導体製造方法及びサテライト |
KR100689843B1 (ko) * | 2006-01-03 | 2007-03-08 | 삼성전자주식회사 | 웨이퍼 스테이지 및 이를 이용한 웨이퍼 안착방법 |
US7845891B2 (en) | 2006-01-13 | 2010-12-07 | Applied Materials, Inc. | Decoupled chamber body |
US20070169703A1 (en) * | 2006-01-23 | 2007-07-26 | Brent Elliot | Advanced ceramic heater for substrate processing |
US20070221128A1 (en) * | 2006-03-23 | 2007-09-27 | Soo Young Choi | Method and apparatus for improving uniformity of large-area substrates |
EP2034035B2 (en) | 2006-05-18 | 2022-09-14 | Kabushiki Kaisha Kobe Seiko Sho | Process for producing aluminum alloy plate |
US7665951B2 (en) | 2006-06-02 | 2010-02-23 | Applied Materials, Inc. | Multiple slot load lock chamber and method of operation |
US7845618B2 (en) | 2006-06-28 | 2010-12-07 | Applied Materials, Inc. | Valve door with ball coupling |
US7501355B2 (en) * | 2006-06-29 | 2009-03-10 | Applied Materials, Inc. | Decreasing the etch rate of silicon nitride by carbon addition |
US8124907B2 (en) | 2006-08-04 | 2012-02-28 | Applied Materials, Inc. | Load lock chamber with decoupled slit valve door seal compartment |
US20080145536A1 (en) * | 2006-12-13 | 2008-06-19 | Applied Materials, Inc. | METHOD AND APPARATUS FOR LOW TEMPERATURE AND LOW K SiBN DEPOSITION |
US7981262B2 (en) | 2007-01-29 | 2011-07-19 | Applied Materials, Inc. | Process kit for substrate processing chamber |
US7541290B2 (en) * | 2007-03-08 | 2009-06-02 | Samsung Electronics Co., Ltd. | Methods of forming mask patterns on semiconductor wafers that compensate for nonuniform center-to-edge etch rates during photolithographic processing |
US8377207B2 (en) * | 2007-05-09 | 2013-02-19 | Ulvac, Inc. | Purge gas assembly |
JP5373602B2 (ja) * | 2007-05-18 | 2013-12-18 | 株式会社アルバック | プラズマ処理装置及び防着部材の製造方法 |
US7942969B2 (en) | 2007-05-30 | 2011-05-17 | Applied Materials, Inc. | Substrate cleaning chamber and components |
US20080314319A1 (en) * | 2007-06-19 | 2008-12-25 | Memc Electronic Materials, Inc. | Susceptor for improving throughput and reducing wafer damage |
US20090031955A1 (en) * | 2007-07-30 | 2009-02-05 | Applied Materials, Inc. | Vacuum chucking heater of axisymmetrical and uniform thermal profile |
US20090151872A1 (en) * | 2007-12-17 | 2009-06-18 | Tugrul Samir | Low cost high conductance chamber |
US8999106B2 (en) * | 2007-12-19 | 2015-04-07 | Applied Materials, Inc. | Apparatus and method for controlling edge performance in an inductively coupled plasma chamber |
US8404049B2 (en) * | 2007-12-27 | 2013-03-26 | Memc Electronic Materials, Inc. | Epitaxial barrel susceptor having improved thickness uniformity |
CN101552182B (zh) * | 2008-03-31 | 2010-11-03 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 一种用于半导体制造工艺中的边缘环机构 |
US20090274590A1 (en) * | 2008-05-05 | 2009-11-05 | Applied Materials, Inc. | Plasma reactor electrostatic chuck having a coaxial rf feed and multizone ac heater power transmission through the coaxial feed |
US20090280248A1 (en) * | 2008-05-06 | 2009-11-12 | Asm America, Inc. | Porous substrate holder with thinned portions |
US20100098519A1 (en) * | 2008-10-17 | 2010-04-22 | Memc Electronic Materials, Inc. | Support for a semiconductor wafer in a high temperature environment |
US20100177454A1 (en) * | 2009-01-09 | 2010-07-15 | Component Re-Engineering Company, Inc. | Electrostatic chuck with dielectric inserts |
US9324576B2 (en) | 2010-05-27 | 2016-04-26 | Applied Materials, Inc. | Selective etch for silicon films |
US10283321B2 (en) | 2011-01-18 | 2019-05-07 | Applied Materials, Inc. | Semiconductor processing system and methods using capacitively coupled plasma |
US8771539B2 (en) | 2011-02-22 | 2014-07-08 | Applied Materials, Inc. | Remotely-excited fluorine and water vapor etch |
US8999856B2 (en) | 2011-03-14 | 2015-04-07 | Applied Materials, Inc. | Methods for etch of sin films |
US9064815B2 (en) | 2011-03-14 | 2015-06-23 | Applied Materials, Inc. | Methods for etch of metal and metal-oxide films |
US8771536B2 (en) | 2011-08-01 | 2014-07-08 | Applied Materials, Inc. | Dry-etch for silicon-and-carbon-containing films |
US8679982B2 (en) | 2011-08-26 | 2014-03-25 | Applied Materials, Inc. | Selective suppression of dry-etch rate of materials containing both silicon and oxygen |
US8679983B2 (en) | 2011-09-01 | 2014-03-25 | Applied Materials, Inc. | Selective suppression of dry-etch rate of materials containing both silicon and nitrogen |
US8927390B2 (en) | 2011-09-26 | 2015-01-06 | Applied Materials, Inc. | Intrench profile |
US8808563B2 (en) | 2011-10-07 | 2014-08-19 | Applied Materials, Inc. | Selective etch of silicon by way of metastable hydrogen termination |
WO2013070436A1 (en) | 2011-11-08 | 2013-05-16 | Applied Materials, Inc. | Methods of reducing substrate dislocation during gapfill processing |
WO2013155073A1 (en) * | 2012-04-10 | 2013-10-17 | Memc Electronic Materials, Inc. | Susceptor for improved epitaxial wafer flatness and methods for fabricating a semiconductor wafer processing device |
US8940094B2 (en) | 2012-04-10 | 2015-01-27 | Sunedison Semiconductor Limited | Methods for fabricating a semiconductor wafer processing device |
US9267739B2 (en) | 2012-07-18 | 2016-02-23 | Applied Materials, Inc. | Pedestal with multi-zone temperature control and multiple purge capabilities |
US9373517B2 (en) | 2012-08-02 | 2016-06-21 | Applied Materials, Inc. | Semiconductor processing with DC assisted RF power for improved control |
US9034770B2 (en) | 2012-09-17 | 2015-05-19 | Applied Materials, Inc. | Differential silicon oxide etch |
US9023734B2 (en) | 2012-09-18 | 2015-05-05 | Applied Materials, Inc. | Radical-component oxide etch |
US9390937B2 (en) | 2012-09-20 | 2016-07-12 | Applied Materials, Inc. | Silicon-carbon-nitride selective etch |
US9132436B2 (en) | 2012-09-21 | 2015-09-15 | Applied Materials, Inc. | Chemical control features in wafer process equipment |
US8765574B2 (en) | 2012-11-09 | 2014-07-01 | Applied Materials, Inc. | Dry etch process |
US8969212B2 (en) | 2012-11-20 | 2015-03-03 | Applied Materials, Inc. | Dry-etch selectivity |
US9064816B2 (en) | 2012-11-30 | 2015-06-23 | Applied Materials, Inc. | Dry-etch for selective oxidation removal |
US8980763B2 (en) | 2012-11-30 | 2015-03-17 | Applied Materials, Inc. | Dry-etch for selective tungsten removal |
US9111877B2 (en) | 2012-12-18 | 2015-08-18 | Applied Materials, Inc. | Non-local plasma oxide etch |
US8921234B2 (en) | 2012-12-21 | 2014-12-30 | Applied Materials, Inc. | Selective titanium nitride etching |
US9018108B2 (en) | 2013-01-25 | 2015-04-28 | Applied Materials, Inc. | Low shrinkage dielectric films |
US10256079B2 (en) | 2013-02-08 | 2019-04-09 | Applied Materials, Inc. | Semiconductor processing systems having multiple plasma configurations |
US9997381B2 (en) | 2013-02-18 | 2018-06-12 | Lam Research Corporation | Hybrid edge ring for plasma wafer processing |
FR3002242B1 (fr) | 2013-02-21 | 2015-04-03 | Altatech Semiconductor | Dispositif de depot chimique en phase vapeur |
FR3002241B1 (fr) | 2013-02-21 | 2015-11-20 | Altatech Semiconductor | Dispositif de depot chimique en phase vapeur |
US9362130B2 (en) | 2013-03-01 | 2016-06-07 | Applied Materials, Inc. | Enhanced etching processes using remote plasma sources |
US9040422B2 (en) | 2013-03-05 | 2015-05-26 | Applied Materials, Inc. | Selective titanium nitride removal |
US8801952B1 (en) | 2013-03-07 | 2014-08-12 | Applied Materials, Inc. | Conformal oxide dry etch |
US10170282B2 (en) | 2013-03-08 | 2019-01-01 | Applied Materials, Inc. | Insulated semiconductor faceplate designs |
US20140271097A1 (en) | 2013-03-15 | 2014-09-18 | Applied Materials, Inc. | Processing systems and methods for halide scavenging |
JP5386046B1 (ja) * | 2013-03-27 | 2014-01-15 | エピクルー株式会社 | サセプタ支持部およびこのサセプタ支持部を備えるエピタキシャル成長装置 |
US8895449B1 (en) | 2013-05-16 | 2014-11-25 | Applied Materials, Inc. | Delicate dry clean |
US9114438B2 (en) | 2013-05-21 | 2015-08-25 | Applied Materials, Inc. | Copper residue chamber clean |
US9493879B2 (en) | 2013-07-12 | 2016-11-15 | Applied Materials, Inc. | Selective sputtering for pattern transfer |
US9773648B2 (en) | 2013-08-30 | 2017-09-26 | Applied Materials, Inc. | Dual discharge modes operation for remote plasma |
US8956980B1 (en) | 2013-09-16 | 2015-02-17 | Applied Materials, Inc. | Selective etch of silicon nitride |
US8951429B1 (en) | 2013-10-29 | 2015-02-10 | Applied Materials, Inc. | Tungsten oxide processing |
US9576809B2 (en) | 2013-11-04 | 2017-02-21 | Applied Materials, Inc. | Etch suppression with germanium |
US9236265B2 (en) | 2013-11-04 | 2016-01-12 | Applied Materials, Inc. | Silicon germanium processing |
US9520303B2 (en) | 2013-11-12 | 2016-12-13 | Applied Materials, Inc. | Aluminum selective etch |
US9245762B2 (en) | 2013-12-02 | 2016-01-26 | Applied Materials, Inc. | Procedure for etch rate consistency |
US9117855B2 (en) | 2013-12-04 | 2015-08-25 | Applied Materials, Inc. | Polarity control for remote plasma |
US9287095B2 (en) | 2013-12-17 | 2016-03-15 | Applied Materials, Inc. | Semiconductor system assemblies and methods of operation |
US9263278B2 (en) | 2013-12-17 | 2016-02-16 | Applied Materials, Inc. | Dopant etch selectivity control |
US9190293B2 (en) | 2013-12-18 | 2015-11-17 | Applied Materials, Inc. | Even tungsten etch for high aspect ratio trenches |
US10804081B2 (en) | 2013-12-20 | 2020-10-13 | Lam Research Corporation | Edge ring dimensioned to extend lifetime of elastomer seal in a plasma processing chamber |
US9287134B2 (en) | 2014-01-17 | 2016-03-15 | Applied Materials, Inc. | Titanium oxide etch |
US9396989B2 (en) | 2014-01-27 | 2016-07-19 | Applied Materials, Inc. | Air gaps between copper lines |
US9293568B2 (en) | 2014-01-27 | 2016-03-22 | Applied Materials, Inc. | Method of fin patterning |
US9385028B2 (en) | 2014-02-03 | 2016-07-05 | Applied Materials, Inc. | Air gap process |
US9499898B2 (en) | 2014-03-03 | 2016-11-22 | Applied Materials, Inc. | Layered thin film heater and method of fabrication |
US9299575B2 (en) | 2014-03-17 | 2016-03-29 | Applied Materials, Inc. | Gas-phase tungsten etch |
US9299537B2 (en) | 2014-03-20 | 2016-03-29 | Applied Materials, Inc. | Radial waveguide systems and methods for post-match control of microwaves |
US9299538B2 (en) | 2014-03-20 | 2016-03-29 | Applied Materials, Inc. | Radial waveguide systems and methods for post-match control of microwaves |
US9136273B1 (en) | 2014-03-21 | 2015-09-15 | Applied Materials, Inc. | Flash gate air gap |
US9903020B2 (en) | 2014-03-31 | 2018-02-27 | Applied Materials, Inc. | Generation of compact alumina passivation layers on aluminum plasma equipment components |
US9269590B2 (en) | 2014-04-07 | 2016-02-23 | Applied Materials, Inc. | Spacer formation |
US9309598B2 (en) | 2014-05-28 | 2016-04-12 | Applied Materials, Inc. | Oxide and metal removal |
US9847289B2 (en) | 2014-05-30 | 2017-12-19 | Applied Materials, Inc. | Protective via cap for improved interconnect performance |
US9406523B2 (en) | 2014-06-19 | 2016-08-02 | Applied Materials, Inc. | Highly selective doped oxide removal method |
US9378969B2 (en) | 2014-06-19 | 2016-06-28 | Applied Materials, Inc. | Low temperature gas-phase carbon removal |
US9425058B2 (en) | 2014-07-24 | 2016-08-23 | Applied Materials, Inc. | Simplified litho-etch-litho-etch process |
US9496167B2 (en) | 2014-07-31 | 2016-11-15 | Applied Materials, Inc. | Integrated bit-line airgap formation and gate stack post clean |
US9378978B2 (en) | 2014-07-31 | 2016-06-28 | Applied Materials, Inc. | Integrated oxide recess and floating gate fin trimming |
US9159606B1 (en) | 2014-07-31 | 2015-10-13 | Applied Materials, Inc. | Metal air gap |
US9165786B1 (en) | 2014-08-05 | 2015-10-20 | Applied Materials, Inc. | Integrated oxide and nitride recess for better channel contact in 3D architectures |
US9659753B2 (en) | 2014-08-07 | 2017-05-23 | Applied Materials, Inc. | Grooved insulator to reduce leakage current |
US9553102B2 (en) | 2014-08-19 | 2017-01-24 | Applied Materials, Inc. | Tungsten separation |
US9355856B2 (en) | 2014-09-12 | 2016-05-31 | Applied Materials, Inc. | V trench dry etch |
US9368364B2 (en) | 2014-09-24 | 2016-06-14 | Applied Materials, Inc. | Silicon etch process with tunable selectivity to SiO2 and other materials |
US9478434B2 (en) | 2014-09-24 | 2016-10-25 | Applied Materials, Inc. | Chlorine-based hardmask removal |
US9613822B2 (en) | 2014-09-25 | 2017-04-04 | Applied Materials, Inc. | Oxide etch selectivity enhancement |
US9966240B2 (en) | 2014-10-14 | 2018-05-08 | Applied Materials, Inc. | Systems and methods for internal surface conditioning assessment in plasma processing equipment |
US9355922B2 (en) | 2014-10-14 | 2016-05-31 | Applied Materials, Inc. | Systems and methods for internal surface conditioning in plasma processing equipment |
US11637002B2 (en) | 2014-11-26 | 2023-04-25 | Applied Materials, Inc. | Methods and systems to enhance process uniformity |
US9299583B1 (en) | 2014-12-05 | 2016-03-29 | Applied Materials, Inc. | Aluminum oxide selective etch |
US10224210B2 (en) | 2014-12-09 | 2019-03-05 | Applied Materials, Inc. | Plasma processing system with direct outlet toroidal plasma source |
US10573496B2 (en) | 2014-12-09 | 2020-02-25 | Applied Materials, Inc. | Direct outlet toroidal plasma source |
US9502258B2 (en) | 2014-12-23 | 2016-11-22 | Applied Materials, Inc. | Anisotropic gap etch |
US9343272B1 (en) | 2015-01-08 | 2016-05-17 | Applied Materials, Inc. | Self-aligned process |
US11257693B2 (en) | 2015-01-09 | 2022-02-22 | Applied Materials, Inc. | Methods and systems to improve pedestal temperature control |
US9373522B1 (en) | 2015-01-22 | 2016-06-21 | Applied Mateials, Inc. | Titanium nitride removal |
US9449846B2 (en) | 2015-01-28 | 2016-09-20 | Applied Materials, Inc. | Vertical gate separation |
US9728437B2 (en) | 2015-02-03 | 2017-08-08 | Applied Materials, Inc. | High temperature chuck for plasma processing systems |
US20160225652A1 (en) | 2015-02-03 | 2016-08-04 | Applied Materials, Inc. | Low temperature chuck for plasma processing systems |
US9881805B2 (en) | 2015-03-02 | 2018-01-30 | Applied Materials, Inc. | Silicon selective removal |
US9633875B2 (en) * | 2015-03-13 | 2017-04-25 | Varian Semiconductor Equipment Associates, Inc. | Apparatus for improving temperature uniformity of a workpiece |
US9691645B2 (en) | 2015-08-06 | 2017-06-27 | Applied Materials, Inc. | Bolted wafer chuck thermal management systems and methods for wafer processing systems |
US9741593B2 (en) | 2015-08-06 | 2017-08-22 | Applied Materials, Inc. | Thermal management systems and methods for wafer processing systems |
US9349605B1 (en) | 2015-08-07 | 2016-05-24 | Applied Materials, Inc. | Oxide etch selectivity systems and methods |
US10504700B2 (en) | 2015-08-27 | 2019-12-10 | Applied Materials, Inc. | Plasma etching systems and methods with secondary plasma injection |
EP3363044B1 (en) * | 2015-10-15 | 2021-12-15 | Applied Materials, Inc. | Substrate carrier system |
KR102468743B1 (ko) | 2015-12-31 | 2022-11-21 | 엘지디스플레이 주식회사 | 표시장치, 터치 센싱 회로 및 구동방법 |
TWI734770B (zh) | 2016-04-24 | 2021-08-01 | 美商應用材料股份有限公司 | 用於防止空間ald處理腔室中之背側沉積的設備 |
US10504754B2 (en) | 2016-05-19 | 2019-12-10 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
US10522371B2 (en) | 2016-05-19 | 2019-12-31 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
JP6632469B2 (ja) * | 2016-05-24 | 2020-01-22 | 三菱電機株式会社 | ウエハトレイ |
US9865484B1 (en) | 2016-06-29 | 2018-01-09 | Applied Materials, Inc. | Selective etch using material modification and RF pulsing |
US10629473B2 (en) | 2016-09-09 | 2020-04-21 | Applied Materials, Inc. | Footing removal for nitride spacer |
US10062575B2 (en) | 2016-09-09 | 2018-08-28 | Applied Materials, Inc. | Poly directional etch by oxidation |
US10546729B2 (en) | 2016-10-04 | 2020-01-28 | Applied Materials, Inc. | Dual-channel showerhead with improved profile |
US10062585B2 (en) | 2016-10-04 | 2018-08-28 | Applied Materials, Inc. | Oxygen compatible plasma source |
US9934942B1 (en) | 2016-10-04 | 2018-04-03 | Applied Materials, Inc. | Chamber with flow-through source |
US9721789B1 (en) | 2016-10-04 | 2017-08-01 | Applied Materials, Inc. | Saving ion-damaged spacers |
US10062579B2 (en) | 2016-10-07 | 2018-08-28 | Applied Materials, Inc. | Selective SiN lateral recess |
US9947549B1 (en) | 2016-10-10 | 2018-04-17 | Applied Materials, Inc. | Cobalt-containing material removal |
TWI728197B (zh) | 2016-10-24 | 2021-05-21 | 美商克萊譚克公司 | 整合至一計量及/或檢測工具中之製程模組 |
US9768034B1 (en) | 2016-11-11 | 2017-09-19 | Applied Materials, Inc. | Removal methods for high aspect ratio structures |
US10163696B2 (en) | 2016-11-11 | 2018-12-25 | Applied Materials, Inc. | Selective cobalt removal for bottom up gapfill |
US10026621B2 (en) | 2016-11-14 | 2018-07-17 | Applied Materials, Inc. | SiN spacer profile patterning |
US10242908B2 (en) | 2016-11-14 | 2019-03-26 | Applied Materials, Inc. | Airgap formation with damage-free copper |
US10566206B2 (en) | 2016-12-27 | 2020-02-18 | Applied Materials, Inc. | Systems and methods for anisotropic material breakthrough |
US10431429B2 (en) | 2017-02-03 | 2019-10-01 | Applied Materials, Inc. | Systems and methods for radial and azimuthal control of plasma uniformity |
US10403507B2 (en) | 2017-02-03 | 2019-09-03 | Applied Materials, Inc. | Shaped etch profile with oxidation |
US10043684B1 (en) | 2017-02-06 | 2018-08-07 | Applied Materials, Inc. | Self-limiting atomic thermal etching systems and methods |
US10319739B2 (en) | 2017-02-08 | 2019-06-11 | Applied Materials, Inc. | Accommodating imperfectly aligned memory holes |
US10943834B2 (en) | 2017-03-13 | 2021-03-09 | Applied Materials, Inc. | Replacement contact process |
US10319649B2 (en) | 2017-04-11 | 2019-06-11 | Applied Materials, Inc. | Optical emission spectroscopy (OES) for remote plasma monitoring |
DE102017206671A1 (de) * | 2017-04-20 | 2018-10-25 | Siltronic Ag | Suszeptor zum Halten einer Halbleiterscheibe mit Orientierungskerbe während des Abscheidens einer Schicht auf einer Vorderseite der Halbleiterscheibe und Verfahren zum Abscheiden der Schicht unter Verwendung des Suszeptors |
US11276590B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Multi-zone semiconductor substrate supports |
JP6837911B2 (ja) * | 2017-05-17 | 2021-03-03 | 株式会社Screenホールディングス | 熱処理装置 |
US11276559B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Semiconductor processing chamber for multiple precursor flow |
US10049891B1 (en) | 2017-05-31 | 2018-08-14 | Applied Materials, Inc. | Selective in situ cobalt residue removal |
US10497579B2 (en) | 2017-05-31 | 2019-12-03 | Applied Materials, Inc. | Water-free etching methods |
US10920320B2 (en) | 2017-06-16 | 2021-02-16 | Applied Materials, Inc. | Plasma health determination in semiconductor substrate processing reactors |
US10541246B2 (en) | 2017-06-26 | 2020-01-21 | Applied Materials, Inc. | 3D flash memory cells which discourage cross-cell electrical tunneling |
US10727080B2 (en) | 2017-07-07 | 2020-07-28 | Applied Materials, Inc. | Tantalum-containing material removal |
US10541184B2 (en) | 2017-07-11 | 2020-01-21 | Applied Materials, Inc. | Optical emission spectroscopic techniques for monitoring etching |
US10354889B2 (en) | 2017-07-17 | 2019-07-16 | Applied Materials, Inc. | Non-halogen etching of silicon-containing materials |
US10043674B1 (en) | 2017-08-04 | 2018-08-07 | Applied Materials, Inc. | Germanium etching systems and methods |
US10170336B1 (en) | 2017-08-04 | 2019-01-01 | Applied Materials, Inc. | Methods for anisotropic control of selective silicon removal |
US10297458B2 (en) | 2017-08-07 | 2019-05-21 | Applied Materials, Inc. | Process window widening using coated parts in plasma etch processes |
US10128086B1 (en) | 2017-10-24 | 2018-11-13 | Applied Materials, Inc. | Silicon pretreatment for nitride removal |
US10283324B1 (en) | 2017-10-24 | 2019-05-07 | Applied Materials, Inc. | Oxygen treatment for nitride etching |
JP6967954B2 (ja) * | 2017-12-05 | 2021-11-17 | 東京エレクトロン株式会社 | 排気装置、処理装置及び排気方法 |
US10256112B1 (en) | 2017-12-08 | 2019-04-09 | Applied Materials, Inc. | Selective tungsten removal |
US10903054B2 (en) | 2017-12-19 | 2021-01-26 | Applied Materials, Inc. | Multi-zone gas distribution systems and methods |
US11328909B2 (en) | 2017-12-22 | 2022-05-10 | Applied Materials, Inc. | Chamber conditioning and removal processes |
US10854426B2 (en) | 2018-01-08 | 2020-12-01 | Applied Materials, Inc. | Metal recess for semiconductor structures |
US10964512B2 (en) | 2018-02-15 | 2021-03-30 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus and methods |
US10679870B2 (en) | 2018-02-15 | 2020-06-09 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus |
TWI716818B (zh) | 2018-02-28 | 2021-01-21 | 美商應用材料股份有限公司 | 形成氣隙的系統及方法 |
US10593560B2 (en) | 2018-03-01 | 2020-03-17 | Applied Materials, Inc. | Magnetic induction plasma source for semiconductor processes and equipment |
US10319600B1 (en) | 2018-03-12 | 2019-06-11 | Applied Materials, Inc. | Thermal silicon etch |
US10497573B2 (en) | 2018-03-13 | 2019-12-03 | Applied Materials, Inc. | Selective atomic layer etching of semiconductor materials |
US10573527B2 (en) | 2018-04-06 | 2020-02-25 | Applied Materials, Inc. | Gas-phase selective etching systems and methods |
US10490406B2 (en) | 2018-04-10 | 2019-11-26 | Appled Materials, Inc. | Systems and methods for material breakthrough |
US10699879B2 (en) | 2018-04-17 | 2020-06-30 | Applied Materials, Inc. | Two piece electrode assembly with gap for plasma control |
US10886137B2 (en) | 2018-04-30 | 2021-01-05 | Applied Materials, Inc. | Selective nitride removal |
WO2019245592A1 (en) * | 2018-06-22 | 2019-12-26 | Versum Materials Us, Llc | Purge system for gas supply equipment capable of high-temperature high-pressure purging |
US11427912B2 (en) | 2018-06-25 | 2022-08-30 | Applied Materials, Inc. | High temperature rotation module for a processing chamber |
US10755941B2 (en) | 2018-07-06 | 2020-08-25 | Applied Materials, Inc. | Self-limiting selective etching systems and methods |
US10872778B2 (en) | 2018-07-06 | 2020-12-22 | Applied Materials, Inc. | Systems and methods utilizing solid-phase etchants |
CN109136884A (zh) * | 2018-07-23 | 2019-01-04 | 中国电子科技集团公司第四十八研究所 | 平板式pecvd设备载板自动传输控制装置、pecvd设备及方法 |
US10672642B2 (en) | 2018-07-24 | 2020-06-02 | Applied Materials, Inc. | Systems and methods for pedestal configuration |
US11049755B2 (en) | 2018-09-14 | 2021-06-29 | Applied Materials, Inc. | Semiconductor substrate supports with embedded RF shield |
US10892198B2 (en) | 2018-09-14 | 2021-01-12 | Applied Materials, Inc. | Systems and methods for improved performance in semiconductor processing |
US11062887B2 (en) | 2018-09-17 | 2021-07-13 | Applied Materials, Inc. | High temperature RF heater pedestals |
US11417534B2 (en) | 2018-09-21 | 2022-08-16 | Applied Materials, Inc. | Selective material removal |
US11682560B2 (en) | 2018-10-11 | 2023-06-20 | Applied Materials, Inc. | Systems and methods for hafnium-containing film removal |
US11121002B2 (en) | 2018-10-24 | 2021-09-14 | Applied Materials, Inc. | Systems and methods for etching metals and metal derivatives |
US11437242B2 (en) | 2018-11-27 | 2022-09-06 | Applied Materials, Inc. | Selective removal of silicon-containing materials |
US11721527B2 (en) | 2019-01-07 | 2023-08-08 | Applied Materials, Inc. | Processing chamber mixing systems |
US10920319B2 (en) | 2019-01-11 | 2021-02-16 | Applied Materials, Inc. | Ceramic showerheads with conductive electrodes |
CN111446185A (zh) | 2019-01-17 | 2020-07-24 | Asm Ip 控股有限公司 | 通风基座 |
CN111863589A (zh) * | 2019-04-24 | 2020-10-30 | 北京北方华创微电子装备有限公司 | 吹扫方法及结构、沉积工艺及进气系统 |
US11404302B2 (en) * | 2019-05-22 | 2022-08-02 | Asm Ip Holding B.V. | Substrate susceptor using edge purging |
US11415463B2 (en) * | 2019-06-04 | 2022-08-16 | Applied Materials, Inc. | Contactless workpiece temperature sensor |
US11764101B2 (en) | 2019-10-24 | 2023-09-19 | ASM IP Holding, B.V. | Susceptor for semiconductor substrate processing |
US11817313B2 (en) | 2020-02-05 | 2023-11-14 | Applied Materials, Inc. | Methods for pressure ramped plasma purge |
USD1031676S1 (en) | 2020-12-04 | 2024-06-18 | Asm Ip Holding B.V. | Combined susceptor, support, and lift system |
US20220216093A1 (en) * | 2021-01-06 | 2022-07-07 | Changxin Memory Technologies, Inc. | Floating pin, wafer carrying device and depositing apparatus |
Family Cites Families (49)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2171877A1 (en) * | 1972-02-14 | 1973-09-28 | Commissariat Energie Atomique | Semiconductor coating appts - giving improved uniformity of coating |
US4061800A (en) * | 1975-02-06 | 1977-12-06 | Applied Materials, Inc. | Vapor desposition method |
US4209357A (en) * | 1979-05-18 | 1980-06-24 | Tegal Corporation | Plasma reactor apparatus |
US4585920A (en) * | 1982-05-21 | 1986-04-29 | Tegal Corporation | Plasma reactor removable insert |
US4579618A (en) * | 1984-01-06 | 1986-04-01 | Tegal Corporation | Plasma reactor apparatus |
JPS612319A (ja) * | 1984-06-14 | 1986-01-08 | Semiconductor Energy Lab Co Ltd | Cvd装置 |
JPS636833A (ja) * | 1986-06-26 | 1988-01-12 | Toshiba Ceramics Co Ltd | 気相成長装置 |
US4872947A (en) * | 1986-12-19 | 1989-10-10 | Applied Materials, Inc. | CVD of silicon oxide using TEOS decomposition and in-situ planarization process |
US4951601A (en) * | 1986-12-19 | 1990-08-28 | Applied Materials, Inc. | Multi-chamber integrated process system |
US4892753A (en) * | 1986-12-19 | 1990-01-09 | Applied Materials, Inc. | Process for PECVD of silicon oxide using TEOS decomposition |
US5158644A (en) * | 1986-12-19 | 1992-10-27 | Applied Materials, Inc. | Reactor chamber self-cleaning process |
US5228501A (en) * | 1986-12-19 | 1993-07-20 | Applied Materials, Inc. | Physical vapor deposition clamping mechanism and heater/cooler |
US5000113A (en) * | 1986-12-19 | 1991-03-19 | Applied Materials, Inc. | Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process |
US5198034A (en) * | 1987-03-31 | 1993-03-30 | Epsilon Technology, Inc. | Rotatable substrate supporting mechanism with temperature sensing device for use in chemical vapor deposition equipment |
US4854263B1 (en) * | 1987-08-14 | 1997-06-17 | Applied Materials Inc | Inlet manifold and methods for increasing gas dissociation and for PECVD of dielectric films |
US4997677A (en) * | 1987-08-31 | 1991-03-05 | Massachusetts Institute Of Technology | Vapor phase reactor for making multilayer structures |
US4963423A (en) * | 1987-10-08 | 1990-10-16 | Anelva Corporation | Method for forming a thin film and apparatus of forming a metal thin film utilizing temperature controlling means |
US4820371A (en) * | 1987-12-15 | 1989-04-11 | Texas Instruments Incorporated | Apertured ring for exhausting plasma reactor gases |
JPH0610356B2 (ja) * | 1988-02-18 | 1994-02-09 | 松下電器産業株式会社 | プラズマ処理装置およびプラズマ温度測定方法 |
FR2638020B1 (fr) * | 1988-10-14 | 1990-12-28 | Labo Electronique Physique | Reacteur d'epitaxie a collecteur de gaz ameliore |
US5177878A (en) * | 1989-05-08 | 1993-01-12 | U.S. Philips Corporation | Apparatus and method for treating flat substrate under reduced pressure in the manufacture of electronic devices |
JPH03211823A (ja) * | 1990-01-17 | 1991-09-17 | Matsushita Electron Corp | 半導体製造装置 |
US5108792A (en) * | 1990-03-09 | 1992-04-28 | Applied Materials, Inc. | Double-dome reactor for semiconductor processing |
EP0447155B1 (en) * | 1990-03-12 | 1995-07-26 | Ngk Insulators, Ltd. | Wafer heaters for use in semi-conductor-producing apparatus, heating units using such wafer heaters, and production of heaters |
JPH04226027A (ja) * | 1990-04-23 | 1992-08-14 | Genus Inc | ガス阻止装置を有するウエファ周辺封止装置 |
US5238499A (en) * | 1990-07-16 | 1993-08-24 | Novellus Systems, Inc. | Gas-based substrate protection during processing |
US5578532A (en) * | 1990-07-16 | 1996-11-26 | Novellus Systems, Inc. | Wafer surface protection in a gas deposition process |
US5230741A (en) * | 1990-07-16 | 1993-07-27 | Novellus Systems, Inc. | Gas-based backside protection during substrate processing |
US5148714A (en) * | 1990-10-24 | 1992-09-22 | Ag Processing Technology, Inc. | Rotary/linear actuator for closed chamber, and reaction chamber utilizing same |
US5304248A (en) * | 1990-12-05 | 1994-04-19 | Applied Materials, Inc. | Passive shield for CVD wafer processing which provides frontside edge exclusion and prevents backside depositions |
JPH05226252A (ja) * | 1992-02-10 | 1993-09-03 | Fujitsu Ltd | 気相成長装置および該装置を用いた気相成長方法 |
JPH0811718B2 (ja) * | 1992-02-27 | 1996-02-07 | 大同ほくさん株式会社 | ガスソース分子線エピタキシー装置 |
US5370739A (en) * | 1992-06-15 | 1994-12-06 | Materials Research Corporation | Rotating susceptor semiconductor wafer processing cluster tool module useful for tungsten CVD |
US5534072A (en) * | 1992-06-24 | 1996-07-09 | Anelva Corporation | Integrated module multi-chamber CVD processing system and its method for processing subtrates |
NL9201211A (nl) * | 1992-07-07 | 1994-02-01 | Cobrain Nv | Inrichting en werkwijze voor het behandelen van een plak halfgeleider-materiaal. |
US5589224A (en) * | 1992-09-30 | 1996-12-31 | Applied Materials, Inc. | Apparatus for full wafer deposition |
US5292554A (en) * | 1992-11-12 | 1994-03-08 | Applied Materials, Inc. | Deposition apparatus using a perforated pumping plate |
US5343938A (en) * | 1992-12-24 | 1994-09-06 | Vlsi Technology, Inc. | Method and apparatus for thermally insulating a wafer support |
JP2662365B2 (ja) * | 1993-01-28 | 1997-10-08 | アプライド マテリアルズ インコーポレイテッド | 改良された排出システムを有する単一基板式の真空処理装置 |
DE59406900D1 (de) * | 1993-02-08 | 1998-10-22 | Sez Semiconduct Equip Zubehoer | Träger für scheibenförmige Gegenstände |
US5421893A (en) * | 1993-02-26 | 1995-06-06 | Applied Materials, Inc. | Susceptor drive and wafer displacement mechanism |
US5326725A (en) * | 1993-03-11 | 1994-07-05 | Applied Materials, Inc. | Clamping ring and susceptor therefor |
US5800686A (en) * | 1993-04-05 | 1998-09-01 | Applied Materials, Inc. | Chemical vapor deposition chamber with substrate edge protection |
JP3190165B2 (ja) * | 1993-04-13 | 2001-07-23 | 東京エレクトロン株式会社 | 縦型熱処理装置及び熱処理方法 |
US5324553A (en) * | 1993-04-30 | 1994-06-28 | Energy Conversion Devices, Inc. | Method for the improved microwave deposition of thin films |
US5525160A (en) * | 1993-05-10 | 1996-06-11 | Tokyo Electron Kabushiki Kaisha | Film deposition processing device having transparent support and transfer pins |
US5437757A (en) * | 1994-01-21 | 1995-08-01 | Applied Materials, Inc. | Clamp ring for domed pedestal in wafer processing chamber |
US5556476A (en) * | 1994-02-23 | 1996-09-17 | Applied Materials, Inc. | Controlling edge deposition on semiconductor substrates |
US5476548A (en) * | 1994-06-20 | 1995-12-19 | Applied Materials, Inc. | Reducing backside deposition in a substrate processing apparatus through the use of a shadow ring |
-
1994
- 1994-02-23 US US08/200,079 patent/US5800686A/en not_active Expired - Lifetime
- 1994-02-23 US US08/200,862 patent/US5695568A/en not_active Expired - Lifetime
- 1994-03-31 EP EP94105139A patent/EP0619381B1/en not_active Expired - Lifetime
- 1994-03-31 DE DE69411307T patent/DE69411307T2/de not_active Expired - Fee Related
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- 1994-04-05 JP JP6067474A patent/JP2918785B2/ja not_active Expired - Lifetime
- 1994-04-06 KR KR1019940007125A patent/KR100190726B1/ko not_active IP Right Cessation
- 1994-11-21 US US08/342,670 patent/US5516367A/en not_active Expired - Lifetime
- 1994-11-21 US US08/342,522 patent/US5856240A/en not_active Expired - Lifetime
-
1996
- 1996-02-23 US US08/606,267 patent/US5935338A/en not_active Expired - Lifetime
- 1996-02-23 US US08/605,809 patent/US6103014A/en not_active Expired - Lifetime
-
1997
- 1997-09-29 US US08/939,962 patent/US5882419A/en not_active Expired - Lifetime
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