JP5951241B2 - 熱処理方法および熱処理装置 - Google Patents
熱処理方法および熱処理装置 Download PDFInfo
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- JP5951241B2 JP5951241B2 JP2011267548A JP2011267548A JP5951241B2 JP 5951241 B2 JP5951241 B2 JP 5951241B2 JP 2011267548 A JP2011267548 A JP 2011267548A JP 2011267548 A JP2011267548 A JP 2011267548A JP 5951241 B2 JP5951241 B2 JP 5951241B2
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/0033—Heating devices using lamps
- H05B3/0038—Heating devices using lamps for industrial applications
- H05B3/0047—Heating devices using lamps for industrial applications for semiconductor manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
Description
2 シャッター機構
3 制御部
4 ハロゲン加熱部
5 フラッシュ加熱部
6 チャンバー
7 保持部
10 移載機構
21 シャッター板
22 スライド駆動機構
31 パルス発生器
32 波形設定部
33 入力部
61 チャンバー側部
62 凹部
63 上側チャンバー窓
64 下側チャンバー窓
65 熱処理空間
74 サセプター
91 トリガー電極
92 ガラス管
93 コンデンサ
94 コイル
96 IGBT
97 トリガー回路
FL フラッシュランプ
HL ハロゲンランプ
W 半導体ウェハー
Claims (8)
- 基板に光を照射することによって該基板を加熱する熱処理方法であって、
基板を所定の予備加熱温度にて加熱する予備加熱工程と、
前記基板の一方面にフラッシュランプからフラッシュ光を照射し、前記一方面を目標温度に加熱するフラッシュ加熱工程と、
を備え、
前記フラッシュ加熱工程におけるフラッシュ光の照射時間は前記一方面から前記一方面とは反対側の面である他方面への熱伝導に要する熱伝導時間よりも長時間であり、
前記フラッシュ加熱工程における前記一方面と前記他方面との温度差は、前記予備加熱温度から前記目標温度までの昇温温度の半分以下であることを特徴とする熱処理方法。 - 請求項1記載の熱処理方法において、
前記フラッシュ加熱工程における前記一方面の昇温速度は1000℃/秒以上であることを特徴とする熱処理方法。 - 請求項1または請求項2に記載の熱処理方法において、
前記基板はシリコンの半導体ウェハーであることを特徴とする熱処理方法。 - 請求項1から請求項3のいずれかに記載の熱処理方法において、
前記フラッシュ加熱工程では、コンデンサから前記フラッシュランプへの電荷の供給をスイッチング素子によって断続することにより前記フラッシュランプの発光出力を制御することを特徴とする熱処理方法。 - 基板に光を照射することによって該基板を加熱する熱処理装置であって、
基板を収容するチャンバーと、
前記チャンバー内にて基板を保持する保持手段と、
前記保持手段に保持された基板を所定の予備加熱温度に加熱する予備加熱手段と、
前記保持手段に保持された基板にフラッシュ光を照射するフラッシュランプと、
前記フラッシュランプの発光出力を制御する発光制御手段と、
を備え、
前記発光制御手段は、前記保持手段に保持された基板の一方面に、前記一方面から前記一方面とは反対側の面である他方面への熱伝導に要する熱伝導時間よりも長時間にわたってフラッシュ光を照射して前記一方面を目標温度に加熱し、前記一方面と前記他方面との温度差が前記予備加熱温度から前記目標温度までの昇温温度の半分以下となるように前記フラッシュランプの発光出力を制御することを特徴とする熱処理装置。 - 請求項5記載の熱処理装置において、
前記発光制御手段は、前記一方面の温度が1000℃/秒以上の昇温速度にて前記予備加熱温度から前記目標温度にまで昇温するように前記フラッシュランプの発光出力を制御することを特徴とする熱処理装置。 - 請求項5または請求項6に記載の熱処理装置において、
前記基板はシリコンの半導体ウェハーであることを特徴とする熱処理装置。 - 請求項5から請求項7のいずれかに記載の熱処理装置において、
前記発光制御手段は、コンデンサから前記フラッシュランプへの電荷の供給を断続することにより前記フラッシュランプの発光出力を制御するスイッチング素子を含むことを特徴とする熱処理装置。
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JP2011267548A JP5951241B2 (ja) | 2011-12-07 | 2011-12-07 | 熱処理方法および熱処理装置 |
US14/361,000 US9633868B2 (en) | 2011-12-07 | 2012-10-18 | Heat treatment method and heat treatment apparatus |
PCT/JP2012/076914 WO2013084598A1 (ja) | 2011-12-07 | 2012-10-18 | 熱処理方法および熱処理装置 |
TW101139358A TWI497601B (zh) | 2011-12-07 | 2012-10-24 | 熱處理方法及熱處理裝置 |
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JP5951241B2 true JP5951241B2 (ja) | 2016-07-13 |
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US (1) | US9633868B2 (ja) |
JP (1) | JP5951241B2 (ja) |
TW (1) | TWI497601B (ja) |
WO (1) | WO2013084598A1 (ja) |
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JP5875759B2 (ja) * | 2010-10-14 | 2016-03-02 | 株式会社Screenセミコンダクターソリューションズ | 熱処理方法および熱処理装置 |
TWI566300B (zh) | 2011-03-23 | 2017-01-11 | 斯克林集團公司 | 熱處理方法及熱處理裝置 |
CN104900517B (zh) * | 2014-03-04 | 2018-02-27 | 斯克林集团公司 | 热处理方法及热处理装置 |
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US9859121B2 (en) * | 2015-06-29 | 2018-01-02 | International Business Machines Corporation | Multiple nanosecond laser pulse anneal processes and resultant semiconductor structure |
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JP6513041B2 (ja) * | 2016-02-19 | 2019-05-15 | 信越半導体株式会社 | 半導体ウェーハの熱処理方法 |
TWI612259B (zh) * | 2016-02-26 | 2018-01-21 | 財團法人工業技術研究院 | 加熱設備以及加熱方法 |
JP6847610B2 (ja) * | 2016-09-14 | 2021-03-24 | 株式会社Screenホールディングス | 熱処理装置 |
US11476167B2 (en) | 2017-03-03 | 2022-10-18 | SCREEN Holdings Co., Ltd. | Heat treatment method and heat treatment apparatus of light irradiation type |
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JP7372066B2 (ja) * | 2019-07-17 | 2023-10-31 | 株式会社Screenホールディングス | 熱処理方法および熱処理装置 |
CN110648958B (zh) * | 2019-09-26 | 2022-04-08 | 京东方科技集团股份有限公司 | 基板支撑台以及基板制备装置 |
CN112382559A (zh) * | 2020-11-13 | 2021-02-19 | 中国科学院上海微系统与信息技术研究所 | 一种异质薄膜结构及其制备方法 |
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US20090120924A1 (en) * | 2007-11-08 | 2009-05-14 | Stephen Moffatt | Pulse train annealing method and apparatus |
JP4816634B2 (ja) * | 2007-12-28 | 2011-11-16 | ウシオ電機株式会社 | 基板加熱装置及び基板加熱方法 |
JP5346484B2 (ja) | 2008-04-16 | 2013-11-20 | 大日本スクリーン製造株式会社 | 熱処理方法および熱処理装置 |
JP5465416B2 (ja) * | 2008-11-04 | 2014-04-09 | 大日本スクリーン製造株式会社 | 熱処理方法 |
KR20110102293A (ko) * | 2008-11-28 | 2011-09-16 | 스미또모 가가꾸 가부시키가이샤 | 반도체 기판의 제조 방법, 반도체 기판, 전자 디바이스의 제조 방법, 및 반응 장치 |
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