JP6942615B2 - 熱処理方法および熱処理装置 - Google Patents
熱処理方法および熱処理装置 Download PDFInfo
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- JP6942615B2 JP6942615B2 JP2017222530A JP2017222530A JP6942615B2 JP 6942615 B2 JP6942615 B2 JP 6942615B2 JP 2017222530 A JP2017222530 A JP 2017222530A JP 2017222530 A JP2017222530 A JP 2017222530A JP 6942615 B2 JP6942615 B2 JP 6942615B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
- H01L21/2686—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation using incoherent radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- High Energy & Nuclear Physics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
3 制御部
4 ハロゲン加熱部
5 フラッシュ加熱部
6 チャンバー
7 保持部
10 移載機構
20 下部放射温度計
25 上部放射温度計
31 解析部
63 上側チャンバー窓
64 下側チャンバー窓
65 熱処理空間
74 サセプタ
75 保持プレート
77 基板支持ピン
90 高速放射温度計ユニット
FL フラッシュランプ
HL ハロゲンランプ
TR 搬送ロボット
W 半導体ウェハー
Claims (6)
- 基板にフラッシュ光を照射することによって該基板を加熱する熱処理方法であって、
チャンバー内にてサセプタに支持された基板の表面にフラッシュランプからフラッシュ光を照射する照射工程と、
少なくとも前記フラッシュ光が照射された以降の前記基板の表面温度を測定して温度プロファイルを取得する温度測定工程と、
前記温度測定工程にて取得された前記温度プロファイルに基づいて前記基板の挙動を解析する解析工程と、
を備え、
前記解析工程では、前記サセプタからの前記基板の跳躍量を算定することを特徴とする熱処理方法。 - 請求項1記載の熱処理方法において、
前記解析工程では、前記チャンバー内が基準圧であるときに測定された表面温度を基準測定温度とし、処理対象となる前記基板について測定された表面温度と前記基準測定温度との差分に基づいて前記基板の挙動を解析することを特徴とする熱処理方法。 - 請求項1または請求項2記載の熱処理方法において、
前記解析工程にて算定された前記基板の跳躍量が所定の閾値を超えた場合には前記チャンバーからの前記基板の搬送を停止することを特徴とする熱処理方法。 - 基板にフラッシュ光を照射することによって該基板を加熱する熱処理装置であって、
基板を収容するチャンバーと、
前記チャンバー内にて前記基板を載置して支持するサセプタと、
前記サセプタに支持された前記基板にフラッシュ光を照射するフラッシュランプと、
前記基板の表面温度を測定する温度測定部と、
少なくとも前記フラッシュ光が照射された以降に前記温度測定部によって測定された前記基板の表面温度から取得された温度プロファイルに基づいて前記基板の挙動を解析する解析部と、
を備え、
前記解析部は、前記サセプタからの前記基板の跳躍量を算定することを特徴とする熱処理装置。 - 請求項4記載の熱処理装置において、
前記解析部は、前記チャンバー内が基準圧であるときに測定された表面温度を基準測定温度とし、処理対象となる前記基板について測定された表面温度と前記基準測定温度との差分に基づいて前記基板の挙動を解析することを特徴とする熱処理装置。 - 請求項4または請求項5記載の熱処理装置において、
前記解析部が算定した前記基板の跳躍量が所定の閾値を超えた場合には前記チャンバーからの前記基板の搬送を停止する制御部をさらに備えることを特徴とする熱処理装置。
Priority Applications (10)
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JP2017222530A JP6942615B2 (ja) | 2017-11-20 | 2017-11-20 | 熱処理方法および熱処理装置 |
TW109104017A TWI727649B (zh) | 2017-11-20 | 2018-11-09 | 熱處理方法及熱處理裝置 |
TW107139821A TWI688993B (zh) | 2017-11-20 | 2018-11-09 | 熱處理方法及熱處理裝置 |
US16/188,672 US10658250B2 (en) | 2017-11-20 | 2018-11-13 | Light irradiation type heat treatment method and heat treatment apparatus |
KR1020180142506A KR102159439B1 (ko) | 2017-11-20 | 2018-11-19 | 열처리 방법 및 열처리 장치 |
CN202311100538.5A CN116913821A (zh) | 2017-11-20 | 2018-11-20 | 热处理方法及热处理装置 |
CN201811383725.8A CN109817550B (zh) | 2017-11-20 | 2018-11-20 | 热处理方法及热处理装置 |
US16/849,291 US10903126B2 (en) | 2017-11-20 | 2020-04-15 | Light irradiation type heat treatment method and heat treatment apparatus |
KR1020200118291A KR102236434B1 (ko) | 2017-11-20 | 2020-09-15 | 열처리 방법 및 열처리 장치 |
JP2021146193A JP7246443B2 (ja) | 2017-11-20 | 2021-09-08 | 熱処理方法および熱処理装置 |
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JP (2) | JP6942615B2 (ja) |
KR (2) | KR102159439B1 (ja) |
CN (2) | CN109817550B (ja) |
TW (2) | TWI688993B (ja) |
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US10840114B1 (en) * | 2016-07-26 | 2020-11-17 | Raytheon Company | Rapid thermal anneal apparatus and method |
JP6847610B2 (ja) * | 2016-09-14 | 2021-03-24 | 株式会社Screenホールディングス | 熱処理装置 |
JP6942615B2 (ja) * | 2017-11-20 | 2021-09-29 | 株式会社Screenホールディングス | 熱処理方法および熱処理装置 |
JP7312020B2 (ja) * | 2019-05-30 | 2023-07-20 | 株式会社Screenホールディングス | 熱処理方法および熱処理装置 |
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