JP5944131B2 - 熱処理方法 - Google Patents
熱処理方法 Download PDFInfo
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- JP5944131B2 JP5944131B2 JP2011210388A JP2011210388A JP5944131B2 JP 5944131 B2 JP5944131 B2 JP 5944131B2 JP 2011210388 A JP2011210388 A JP 2011210388A JP 2011210388 A JP2011210388 A JP 2011210388A JP 5944131 B2 JP5944131 B2 JP 5944131B2
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- semiconductor wafer
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- 238000010438 heat treatment Methods 0.000 title claims description 115
- 238000000034 method Methods 0.000 title claims description 23
- 239000000758 substrate Substances 0.000 claims description 39
- 230000001678 irradiating effect Effects 0.000 claims description 12
- 230000009191 jumping Effects 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 description 160
- 229910052736 halogen Inorganic materials 0.000 description 74
- 150000002367 halogens Chemical class 0.000 description 74
- 238000012546 transfer Methods 0.000 description 55
- 230000007246 mechanism Effects 0.000 description 44
- 238000002791 soaking Methods 0.000 description 40
- 239000007789 gas Substances 0.000 description 33
- 239000012535 impurity Substances 0.000 description 17
- 230000002093 peripheral effect Effects 0.000 description 17
- 238000012545 processing Methods 0.000 description 17
- 239000010453 quartz Substances 0.000 description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 16
- 239000011521 glass Substances 0.000 description 14
- 230000005855 radiation Effects 0.000 description 13
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 11
- 229910052724 xenon Inorganic materials 0.000 description 11
- 239000003990 capacitor Substances 0.000 description 10
- 229910001873 dinitrogen Inorganic materials 0.000 description 9
- 238000000137 annealing Methods 0.000 description 8
- 230000007423 decrease Effects 0.000 description 5
- 238000005336 cracking Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 238000001994 activation Methods 0.000 description 3
- 238000009529 body temperature measurement Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 238000012423 maintenance Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000003028 elevating effect Effects 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 238000005339 levitation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
- H01L21/2686—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation using incoherent radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- High Energy & Nuclear Physics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
また、請求項3の発明は、請求項2の発明に係る熱処理方法において、前記第1のフラッシュ光の照射と前記第2のフラッシュ光の照射との間隔は、1ミリ秒以上500ミリ秒以下であることを特徴とする。
2 シャッター機構
3 制御部
4 ハロゲン加熱部
5 フラッシュ加熱部
6 チャンバー
7 保持部
10 移載機構
21 シャッター板
22 スライド駆動機構
31 パルス発生器
32 波形設定部
33 入力部
61 チャンバー側部
62 凹部
63 上側チャンバー窓
64 下側チャンバー窓
65 熱処理空間
74 均熱リング
91 トリガー電極
92 ガラス管
93 コンデンサ
94 コイル
96 IGBT
97 トリガー回路
FL フラッシュランプ
HL ハロゲンランプ
W 半導体ウェハー
Claims (3)
- 基板に対してフラッシュ光を照射することによって該基板を加熱する熱処理方法であって、
チャンバー内にて支持部材に基板を支持する支持工程と、
前記支持部材に支持された基板の上面に第1のフラッシュ光を照射することによって、前記基板を前記支持部材から跳躍させる跳躍工程と、
前記基板が跳躍して前記基板の全体が前記支持部材から完全に浮上している間に、前記基板の上面に第2のフラッシュ光を照射して加熱処理を行う加熱工程と、
を備え、
前記跳躍工程では、跳躍した基板が前記チャンバーに接触せず、かつ、前記加熱工程で前記第2のフラッシュ光を照射して前記基板が変形したときに前記基板が前記支持部材に接触しない程度に前記基板を前記支持部材から跳躍させることを特徴とする熱処理方法。 - 請求項1記載の熱処理方法において、
前記第1のフラッシュ光の強度は前記第2のフラッシュ光の強度よりも小さいことを特徴とする熱処理方法。 - 請求項2記載の熱処理方法において、
前記第1のフラッシュ光の照射と前記第2のフラッシュ光の照射との間隔は、1ミリ秒以上500ミリ秒以下であることを特徴とする熱処理方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011210388A JP5944131B2 (ja) | 2011-09-27 | 2011-09-27 | 熱処理方法 |
TW101130544A TWI496215B (zh) | 2011-09-27 | 2012-08-22 | 熱處理方法 |
US13/603,584 US8802550B2 (en) | 2011-09-27 | 2012-09-05 | Heat treatment method for heating substrate by irradiating substrate with flash of light |
KR1020120099151A KR101389636B1 (ko) | 2011-09-27 | 2012-09-07 | 열처리 방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011210388A JP5944131B2 (ja) | 2011-09-27 | 2011-09-27 | 熱処理方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013074007A JP2013074007A (ja) | 2013-04-22 |
JP5944131B2 true JP5944131B2 (ja) | 2016-07-05 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2011210388A Active JP5944131B2 (ja) | 2011-09-27 | 2011-09-27 | 熱処理方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8802550B2 (ja) |
JP (1) | JP5944131B2 (ja) |
KR (1) | KR101389636B1 (ja) |
TW (1) | TWI496215B (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11089657B2 (en) * | 2015-03-06 | 2021-08-10 | SCREEN Holdings Co., Ltd. | Light-irradiation heat treatment apparatus |
JP6587955B2 (ja) | 2016-02-24 | 2019-10-09 | 株式会社Screenホールディングス | 熱処理装置 |
WO2018087794A1 (ja) | 2016-11-14 | 2018-05-17 | 信越化学工業株式会社 | 高光電変換効率太陽電池の製造方法及び高光電変換効率太陽電池 |
JP7009102B2 (ja) * | 2017-07-27 | 2022-01-25 | 株式会社Screenホールディングス | 熱処理装置の排気方法 |
JP6942615B2 (ja) | 2017-11-20 | 2021-09-29 | 株式会社Screenホールディングス | 熱処理方法および熱処理装置 |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
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JP4827276B2 (ja) * | 1999-07-05 | 2011-11-30 | 株式会社半導体エネルギー研究所 | レーザー照射装置、レーザー照射方法及び半導体装置の作製方法 |
JP2003017430A (ja) * | 2001-06-28 | 2003-01-17 | Dainippon Screen Mfg Co Ltd | 基板の熱処理装置 |
JP2003059852A (ja) * | 2001-08-10 | 2003-02-28 | Dainippon Screen Mfg Co Ltd | 基板の熱処理装置 |
US6998580B2 (en) | 2002-03-28 | 2006-02-14 | Dainippon Screen Mfg. Co., Ltd. | Thermal processing apparatus and thermal processing method |
JP2003289049A (ja) | 2002-03-28 | 2003-10-10 | Dainippon Screen Mfg Co Ltd | 熱処理装置 |
US6849831B2 (en) | 2002-03-29 | 2005-02-01 | Mattson Technology, Inc. | Pulsed processing semiconductor heating methods using combinations of heating sources |
JP4121840B2 (ja) * | 2002-12-05 | 2008-07-23 | 大日本スクリーン製造株式会社 | 熱処理装置および熱処理方法 |
KR100549452B1 (ko) | 2002-12-05 | 2006-02-06 | 다이닛뽕스크린 세이조오 가부시키가이샤 | 광조사형 열처리장치 및 방법 |
JP4121929B2 (ja) * | 2003-10-08 | 2008-07-23 | 大日本スクリーン製造株式会社 | 熱処理方法および熱処理装置 |
KR20050038763A (ko) | 2003-10-22 | 2005-04-29 | 삼성전자주식회사 | 급속열처리장치 |
JP4841854B2 (ja) * | 2005-03-30 | 2011-12-21 | 大日本スクリーン製造株式会社 | 熱処理装置 |
US7632609B2 (en) * | 2005-10-24 | 2009-12-15 | Shin-Etsu Chemical Co., Ltd. | Fabrication method of photomask-blank |
JP4874830B2 (ja) * | 2007-02-06 | 2012-02-15 | 株式会社東芝 | 半導体装置の製造方法 |
JP4502220B2 (ja) * | 2007-02-13 | 2010-07-14 | 大日本スクリーン製造株式会社 | 熱処理装置 |
JP5221099B2 (ja) * | 2007-10-17 | 2013-06-26 | 大日本スクリーン製造株式会社 | 熱処理装置および熱処理方法 |
JP4816634B2 (ja) * | 2007-12-28 | 2011-11-16 | ウシオ電機株式会社 | 基板加熱装置及び基板加熱方法 |
JP5291965B2 (ja) * | 2008-03-25 | 2013-09-18 | 大日本スクリーン製造株式会社 | 熱処理装置 |
JP5642359B2 (ja) * | 2009-06-04 | 2014-12-17 | 株式会社Screenホールディングス | 熱処理方法および熱処理装置 |
US8559799B2 (en) * | 2008-11-04 | 2013-10-15 | Dainippon Screen Mfg. Co., Ltd. | Heat treatment apparatus and method for heating substrate by photo-irradiation |
JP2010141103A (ja) * | 2008-12-11 | 2010-06-24 | Toshiba Corp | 半導体装置の製造方法および熱処理装置 |
JP5507195B2 (ja) * | 2009-10-13 | 2014-05-28 | 大日本スクリーン製造株式会社 | 熱処理方法および熱処理装置 |
JP5507227B2 (ja) * | 2009-12-07 | 2014-05-28 | 大日本スクリーン製造株式会社 | 熱処理方法および熱処理装置 |
JP5238729B2 (ja) * | 2010-01-07 | 2013-07-17 | 大日本スクリーン製造株式会社 | 熱処理方法および熱処理装置 |
JP5507274B2 (ja) | 2010-01-29 | 2014-05-28 | 大日本スクリーン製造株式会社 | 熱処理方法および熱処理装置 |
-
2011
- 2011-09-27 JP JP2011210388A patent/JP5944131B2/ja active Active
-
2012
- 2012-08-22 TW TW101130544A patent/TWI496215B/zh active
- 2012-09-05 US US13/603,584 patent/US8802550B2/en active Active
- 2012-09-07 KR KR1020120099151A patent/KR101389636B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
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TW201314777A (zh) | 2013-04-01 |
US20130078822A1 (en) | 2013-03-28 |
TWI496215B (zh) | 2015-08-11 |
US8802550B2 (en) | 2014-08-12 |
JP2013074007A (ja) | 2013-04-22 |
KR101389636B1 (ko) | 2014-04-29 |
KR20130033957A (ko) | 2013-04-04 |
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